JP2016207814A - Semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device with a semiconductor chip being laminated and bonded on a semiconductor wafer, which can suppress a length of a burr protruding around the semiconductor chip and inhibit positional deviation of electrodes from each other.SOLUTION: A semiconductor device manufacturing method comprises: a temporary adhesion process of laminating on a semiconductor wafer via an adhesive film 1, a semiconductor chip 2 with a through electrode having a solder layer; and an electrode bonding process of heating the semiconductor chip temporarily adhered on the semiconductor wafer to a temperature above a solder melting temperature to bond the through electrode having the solder layer of the semiconductor chip and the electrode on the semiconductor wafer. The adhesive film has a modulus of elasticity in shear of not less than 0.2 MPa and less than 20 MPa and is preliminarily supplied to the semiconductor chip or the semiconductor wafer. When assuming that a height of an electrode on the side where the adhesive film is supplied is A and a height of an electrode on the side where the adhesive film is not supplied is B, and a thickness of the adhesive film is X, the following formula (1) is satisfied: 0.50<B/(X-A)≤0.80 (1).SELECTED DRAWING: Figure 1

Description

The present invention suppresses the length of burrs protruding around a semiconductor chip and suppresses the positional deviation between electrodes, and a semiconductor in which a semiconductor chip with a through electrode is stacked and bonded on a semiconductor wafer via an adhesive film The present invention relates to a device manufacturing method.

In recent years, flip chip mounting using a semiconductor chip having protruding electrodes (bumps) made of solder or the like has attracted attention.
In flip chip mounting, generally, a method of injecting a sealing resin after bonding a semiconductor chip on a substrate is used. Patent Document 1 describes a sealing resin having a viscosity of 50 Pa · sec or less (25 ° C.) and a viscosity at the time of injection of 2 Pa · sec or less.

In recent years, semiconductor chips have been miniaturized, and the pitch between electrodes has become narrower. In addition, the gap between semiconductor chips or between a semiconductor chip and a substrate has become narrower. Therefore, there is a method in which a semiconductor chip is bonded via a liquid adhesive previously applied onto a substrate, instead of injecting a sealing resin after bonding. Patent Document 2 describes a liquid epoxy resin composition having a thixotropy index of 1.1 to 4.0 before curing and capable of being applied while maintaining its shape.

Furthermore, a method of bonding a semiconductor chip through an adhesive film (NCF) that is bonded in advance to a substrate or a semiconductor chip is also performed. Patent Document 3 describes a sheet-like adhesive having a minimum melt viscosity in the range of 40 Pa · s to 5100 Pa · s. Patent Document 3 describes a problem that a part of the sheet-like adhesive oozes out in the lateral direction due to the pressure contact and wraps around from the side surface to the upper surface of the semiconductor element. Further, it is described that the sheet-like adhesive is a sheet-like adhesive that can suitably prevent the adhesive from protruding to the side, and hardly causes defective products due to excessive protrusion.

In recent years, among flip chip mounting, 3D stacking technology using TSV (Through Silicon Via) that has dramatically improved the performance of devices by stacking multiple semiconductor chips has attracted attention. Yes.
In the TSV stacking technology, generally, semiconductor chips with through electrodes (TSV chips) are stacked in multiple layers via adhesive films at each of the bonding portions partitioned in a grid pattern on a semiconductor wafer, and then a grid-shaped dicing line is used. A multi-layered semiconductor chip stack is manufactured by dicing the semiconductor wafer along the line.

However, since semiconductor chips having the same size are laminated in multiple layers, there is a problem that an adhesive film protrudes in the shape of a burr around the semiconductor chips. Such burrs (edges and edges) can occur at any location between the stacked semiconductor chips. If the burrs are long, the burrs are peeled off during dicing, contaminating the periphery and leading to product defects. If the distance between the dicing lines is increased, even if the burrs are long, they will not be peeled off during dicing, but it is desired to reduce the distance between the dicing lines from the viewpoint of productivity.
As a method for suppressing the length of burrs, it was also considered to make the adhesive film thinner. However, if the adhesive film was made thinner, there was a problem that misalignment of electrodes occurred during lamination and joining, resulting in poor conduction. .

For example, Patent Document 3 describes a sheet-like adhesive designed for the purpose of suppressing lateral protrusion of an adhesive when a semiconductor chip is bonded on a substrate. However, even if the sheet-like adhesive described in Patent Document 3 is applied to the TSV lamination technique, it is not sufficient to suppress the length of burrs during multilayer lamination.

International Publication No. 08/018557 JP 2007-51184 A JP 2007-9022 A

In view of the above-mentioned present situation, the present invention suppresses the length of burrs protruding around the semiconductor chip and suppresses the positional deviation between the electrodes, and the semiconductor chip with a through electrode on the semiconductor wafer via an adhesive film. It is an object of the present invention to provide a method for manufacturing a semiconductor device to be stacked and bonded.

The present invention relates to a temporary bonding step in which a semiconductor chip with a through electrode having a solder layer is laminated on a semiconductor wafer and temporarily bonded via an adhesive film, and a semiconductor chip with a through electrode temporarily bonded on the semiconductor wafer. A method of manufacturing a semiconductor device, comprising: an electrode joining step of joining a through electrode having a solder layer of the semiconductor chip with a through electrode and an electrode on the semiconductor wafer by heating to a temperature equal to or higher than a solder melting temperature, The adhesive film has a shear elastic modulus of 0.2 MPa or more and less than 20 MPa at a temperature when the semiconductor chip with a through electrode is brought into contact with the semiconductor wafer in the temporary bonding step, and the adhesive film has the through electrode in advance. It is supplied to the semiconductor chip or the semiconductor wafer, and the height of the electrode on the side to which the adhesive film is supplied in advance. The A, the height B of the adhesive film on the side not being fed electrode, the thickness of the adhesive film when the X, is a manufacturing method of a semiconductor device satisfying the following formula (1).
0.50 <B / (X−A) ≦ 0.80 (1)
The present invention is described in detail below.

The inventors of the present invention conducted a keen study on a method for manufacturing a semiconductor device in which a semiconductor chip with a through electrode is laminated and bonded on a semiconductor wafer via an adhesive film. As a result, the shear elastic modulus of the adhesive film at a temperature at which the semiconductor chip with a through electrode is brought into contact with the semiconductor wafer is in a certain range, and the height of the electrode on the side on which the adhesive film is supplied in advance, By adjusting the height of the non-supplied electrode and the thickness of the adhesive film to have a specific relationship, the length of burrs protruding around the semiconductor chip is suppressed, and the positional deviation between the electrodes is suppressed. The present invention has been completed.

The method for manufacturing a semiconductor device of the present invention includes a temporary bonding process in which a semiconductor chip with a through electrode having a solder layer (hereinafter also simply referred to as “semiconductor chip”) is laminated on a semiconductor wafer and temporarily bonded via an adhesive film. Process. After semiconductor chips are stacked in layers on a semiconductor wafer and temporarily bonded, the semiconductor chips temporarily bonded in the electrode bonding step are collectively bonded to perform electrode bonding, thereby stacking the semiconductor chips one by one and performing electrode bonding in order. Compared with the case, productivity can be remarkably improved.

The adhesive film has a shear elastic modulus (hereinafter also referred to as “contact temperature elastic modulus”) at a temperature when the semiconductor chip is brought into contact with the semiconductor wafer in the temporary bonding step, and is 0.2 MPa or more and less than 20 MPa. By using an adhesive film having such a contact temperature elastic modulus, it is possible to reduce the amount of burrs protruding around the semiconductor chip, and to prevent misalignment between electrodes and improve connection stability. it can. If the contact temperature elastic modulus is less than 0.2 MPa, the opposing electrodes are likely to be misaligned, and if it is 20 MPa or more, the adhesive film may not adhere to the semiconductor chip or the semiconductor wafer. A preferable lower limit of the contact temperature elastic modulus is 0.25 MPa, a preferable upper limit is 19 MPa, a more preferable lower limit is 0.3 MPa, and a more preferable upper limit is 18 MPa.
The contact temperature elastic modulus is a shear elastic modulus in a temperature range from 0 to 300 ° C., and a sample thickness is 600 μm using a dynamic viscoelasticity measuring apparatus (for example, DVA-200 manufactured by IT Measurement Control Co., Ltd.). It can be determined by measuring from a measurement temperature range of 0 ° C. to 300 ° C. under the conditions of a frequency of 10 Hz, a strain amount of 0.008%, and a temperature increase rate of 5 ° C./min.

As a method for adjusting the contact temperature elastic modulus of the adhesive film to the above range, for example, each component used for the adhesive film, for example, the glass transition temperature (Tg) of a thermosetting resin or a thermosetting agent is selected, or its blending amount And a method for adjusting the blending amount of the inorganic filler in the adhesive film. Especially, the method of adjusting with selection and addition amount of Tg of each component is preferable.

The adhesive film is supplied in advance to either the semiconductor chip or the semiconductor wafer. Thereby, working efficiency can be remarkably improved. The adhesive film is supplied in advance to either a semiconductor chip or a semiconductor wafer, but is preferably a semiconductor chip.
The method of supplying the adhesive film to the semiconductor chip or the semiconductor wafer is not particularly limited. For example, the method of laminating the adhesive film on the semiconductor chip, the laminate of the adhesive film on the semiconductor wafer, and the semiconductor chip with the adhesive film. Examples thereof include a method of dividing into pieces and a method of laminating the adhesive film on a semiconductor wafer.

In the manufacturing method of the semiconductor device of the present invention, the height of the electrode on the side to which the adhesive film is supplied in advance is A, the height of the electrode on the side on which the adhesive film is not supplied is B, and the thickness of the adhesive film is X The above equation (1) is satisfied. By satisfying such a relationship, the amount of burrs protruding around the semiconductor chip can be reduced, and positional displacement between the electrodes can be prevented to improve connection stability. When the value of “B / (X−A)” is 0.50 or less, positional deviation tends to occur between the opposing electrodes, and when it exceeds 0.80, the length of the burr protruding around the semiconductor chip is long. This cannot be sufficiently suppressed, and burrs are peeled off during dicing, contaminating the surrounding area and leading to product defects. The preferable lower limit of the value of “B / (X−A)” is 0.52, and the preferable upper limit is 0.78, the more preferable lower limit is 0.55, and the more preferable upper limit is 0.75.
In addition, in the said Formula (1), each value of A, B, and X means the measured value of each member before laminating | stacking. The method for measuring A, B, and X is not particularly limited, and a non-destructive non-contact measurement method using a laser displacement meter or the like, a non-destructive contact measurement method using a thickness meter, or the like after cross-sectional polishing Examples include the destructive observation measurement method used.

The adhesive film preferably contains a thermosetting resin and a thermosetting agent.
The said thermosetting resin is not specifically limited, For example, the compound hardened | cured by reaction, such as addition polymerization, polycondensation, polyaddition, addition condensation, ring-opening polymerization, is mentioned. Specific examples of the thermosetting resin include urea resin, melamine resin, phenol resin, resorcinol resin, epoxy resin, acrylic resin, polyester resin, polyamide resin, polybenzimidazole resin, diallyl phthalate resin, xylene resin, alkyl -A benzene resin, an epoxy acrylate resin, a silicon resin, a urethane resin, etc. are mentioned.

The epoxy resin is not particularly limited, and examples thereof include an epoxy resin having a softening point of 150 ° C. or lower, an epoxy resin that is liquid or crystalline solid at room temperature, and the like. These epoxy resins may be used independently and 2 or more types may be used together.

When the adhesive film contains an epoxy resin, it may further contain a polymer compound having a functional group capable of reacting with the epoxy resin (also simply referred to as a polymer compound). The polymer compound serves as a film forming component. Moreover, the hardened | cured material of the adhesive film for semiconductor chips with a penetration electrode has toughness by containing the said high molecular compound, and can express the outstanding impact resistance. Furthermore, the Tg of the polymer compound is more preferably 25 ° C. or higher. When the Tg of the polymer compound is 25 ° C. or more, the contact temperature elastic modulus can be easily adjusted.

The polymer compound is not particularly limited, and examples thereof include polymer compounds having an amino group, a urethane group, an imide group, a hydroxyl group, a carboxyl group, an epoxy group, and the like. Among these, a polymer compound having an epoxy group is preferable. By containing the polymer compound having the epoxy group, the cured product of the adhesive film for a semiconductor chip with a through electrode has excellent mechanical strength, heat resistance and moisture resistance derived from the epoxy resin, and the epoxy group. By combining the excellent toughness derived from the polymer compound, high bonding reliability and connection reliability can be expressed.

The polymer compound having an epoxy group is not particularly limited as long as it is a polymer compound having an epoxy group at the terminal and / or side chain (pendant position). For example, an epoxy group-containing acrylic rubber, an epoxy group-containing butadiene rubber, Examples thereof include bisphenol type high molecular weight epoxy resin, epoxy group-containing phenoxy resin, epoxy group-containing acrylic resin, epoxy group-containing urethane resin, and epoxy group-containing polyester resin.

The said thermosetting agent is not specifically limited, For example, a phenol type hardening | curing agent, a thiol type hardening | curing agent, an amine type hardening | curing agent, an acid anhydride type hardening | curing agent etc. are mentioned.

Although content of the said thermosetting agent is not specifically limited, The preferable minimum with respect to a total of 100 weight part of the said thermosetting resin and the said high molecular compound is 5 weight part, and a preferable upper limit is 150 weight part. When the content of the thermosetting agent is less than 5 parts by weight, the cured product becomes hard and brittle, and the bonding reliability may be lowered. Even if content of the said thermosetting agent exceeds 150 weight part, the joining reliability of the adhesive film for semiconductor chips with a penetration electrode may fall. The minimum with more preferable content of the said thermosetting agent is 10 weight part, and a more preferable upper limit is 140 weight part.

The adhesive film may further contain a curing accelerator.
Although the said hardening accelerator is not specifically limited, An imidazole compound is preferable. Since the said imidazole compound has high reactivity with the said epoxy resin, the quick curability of an adhesive film improves by containing the said epoxy resin and the said imidazole compound.

The said adhesive film may contain a diluent within the range which does not inhibit the effect of this invention. Although the said diluent is not specifically limited, The reactive diluent taken in into the hardening system of an adhesive film is preferable. Among these, in order not to deteriorate the bonding reliability of the adhesive film, a reactive diluent having two or more functional groups in one molecule is more preferable.

The content of the diluent is not particularly limited, but a preferred lower limit for the total of 100 parts by weight of the thermosetting resin and the polymer compound is 1 part by weight, and a preferred upper limit is 300 parts by weight. If the content of the diluent is less than 1 part by weight, the effect of adding the diluent may be hardly obtained. When the content of the diluent exceeds 300 parts by weight, the cured product of the adhesive film becomes hard and brittle, so that the bonding reliability may be inferior. The more preferable lower limit of the content of the diluent is 5 parts by weight, and the more preferable upper limit is 200 parts by weight.

The said adhesive film may contain an inorganic ion exchanger as needed. Although content of the said inorganic ion exchanger is not specifically limited, The preferable minimum in an adhesive film is 1 weight% and a preferable upper limit is 10 weight%.
The said adhesive film may contain additives, such as a bleed inhibitor, a silane coupling agent, a flux agent, and a thickener, as needed.

The method for producing the adhesive film is not particularly limited. For example, a predetermined amount of a thermosetting resin, a thermosetting agent, a curing accelerator, a polymer compound, an inorganic filler, a solvent, or other additives is blended as necessary. And a method of coating the resulting resin composition on a release film and drying it. The mixing method is not particularly limited, and examples thereof include a method using a homodisper, a universal mixer, a Banbury mixer, a kneader and the like.

In the temporary bonding step, the specific method for laminating the semiconductor chip on the semiconductor wafer via the adhesive film is not particularly limited. For example, the semiconductor chip to which the adhesive film has been supplied in advance is used for mounting a flip chip bonder or the like. A method of aligning the bonding sites on the semiconductor wafer using an apparatus and heating at a predetermined temperature (hereinafter also referred to as “temporary bonding temperature”) for a predetermined time (hereinafter also referred to as “temporary bonding time”), Examples include a method in which the semiconductor chip is aligned with a bonding portion of a semiconductor wafer to which an adhesive film has been supplied in advance using a mounting device such as a flip chip bonder and heated at a temporary bonding temperature for a temporary bonding time.

By controlling the temporary bonding temperature and the temporary bonding time, the semiconductor wafer and the semiconductor chip can be temporarily bonded without completely curing the adhesive film. In such a temporarily bonded state, the through electrode is not yet joined. The penetration electrode is joined in an electrode joining step described later.
The temporary bonding temperature is not particularly limited, and a temperature lower than the curing temperature of the adhesive film may be adopted at a temperature at which temporary bonding is possible, and the preferable lower limit of the difference from the curing temperature of the adhesive film is 10 ° C., and the preferable upper limit is 200 ° C., a more preferred lower limit is 15 ° C., and a more preferred upper limit is 150 ° C. Specifically, the temporary bonding temperature is preferably about 30 to 200 ° C, more preferably about 40 to 180 ° C.
The temporary bonding time is not particularly limited, but a preferable lower limit is 0.1 seconds and a preferable upper limit is 60 seconds.

When a plurality of semiconductor chips are stacked in multiple layers, the above temporary bonding process may be repeated. That is, for example, after temporarily bonding the first semiconductor chip to the bonding site on the semiconductor wafer via the adhesive film, the second semiconductor chip is temporarily bonded to the first semiconductor chip via the adhesive film, Furthermore, the third semiconductor chip may be temporarily bonded onto the second semiconductor chip via an adhesive film.
By laminating and temporarily bonding a plurality of semiconductor chips in this manner, electrode bonding can be performed collectively on the semiconductor chips temporarily bonded onto the semiconductor wafer, and the semiconductor chips are stacked one by one in order. The productivity can be improved as compared with the case where electrode bonding is performed. Furthermore, productivity can be further improved by collectively performing electrode bonding to the plurality of temporary bonded bodies on the semiconductor wafer.

In the method of manufacturing a semiconductor device of the present invention, the semiconductor chip temporarily bonded on the semiconductor wafer is then heated to a temperature equal to or higher than the solder melting temperature, and the through electrode having the solder layer of the semiconductor chip, the electrode on the semiconductor wafer, An electrode joining step for joining the two is performed.
Specifically, for example, after using a mounting device such as a flip chip bonder for about 0.1 to 60 seconds at a contact temperature of 60 to 220 ° C. (temperature for contacting the electrodes), about 230 to 300 ° C. And a method of heating for about 0.1 to 60 seconds at a temperature equal to or higher than the solder melting temperature.
By controlling the heating conditions, electrode bonding can be performed satisfactorily. Also, depending on the heating conditions, the adhesive film can be completely cured to bond the semiconductor chip satisfactorily.

In the electrode joining step, it is preferable to press against the uppermost semiconductor chip to perform electrode joining of the through electrodes and to fill the sealing region with an adhesive film.
Although the pressure at the time of the said press is not specifically limited, 1-300N is preferable. The pressure per electrode is preferably 0.0001 to 2N. If the pressure per electrode is less than 0.0001 N, the electrodes may not contact each other. If the pressure per one electrode exceeds 2N, the electrode may be crushed too much to contact the adjacent electrode and cause a short circuit.

In the electrode joining step, the adhesive film may be completely cured or may be cured halfway.
When the adhesive film is not completely cured at the time of electrode bonding but is cured to a middle stage, two-stage heating for completely curing the adhesive film after electrode bonding may be performed. That is, after the temporary bonding step and the electrode bonding step, a curing step for completely curing the adhesive film may be performed separately. In the case of performing the curing step, since it is not necessary to heat at once to perform electrode bonding and curing of the adhesive film at the same time, heating cannot be performed uniformly due to variations in the thickness of the semiconductor chip or the electrode height. The problem that the yield decreases can be prevented.

According to the method for manufacturing a semiconductor device of the present invention, it is possible to manufacture a semiconductor device in which a semiconductor chip with a through electrode is laminated and bonded on a semiconductor wafer via an adhesive film.
FIG. 1 is a schematic cross-sectional view showing an example of a state in which semiconductor chips are stacked on a semiconductor wafer with an adhesive film. In FIG. 1, a semiconductor chip 2 with a through electrode is laminated on a semiconductor wafer 3 by an adhesive film 1.
According to the method for manufacturing a semiconductor device of the present invention, it is possible to suppress the length of the burr 5 protruding around the semiconductor chip and to suppress the displacement of the electrode. For this reason, when dicing the semiconductor wafer 3 using the dicing blade 4 along the grid-like dicing line, it is possible to suppress the burr from peeling off and contaminating the periphery, and to stably connect the electrodes. . Moreover, since the length of the burr | flash 5 can be suppressed, the space | interval of a dicing line can be narrowed and productivity can further be improved.

According to the present invention, the length of the burr protruding around the semiconductor chip can be suppressed, and the positional deviation between the electrodes can be suppressed. A method for manufacturing a semiconductor device can be provided.

It is a cross-sectional schematic diagram which shows an example of the state by which the several semiconductor chip with a penetration electrode is laminated | stacked on the semiconductor wafer with the adhesive film.

Hereinafter, embodiments of the present invention will be described in more detail with reference to examples. However, the present invention is not limited to these examples.

Example 1
(1) Manufacture of adhesive film According to the composition described in Tables 1 and 2, the following materials were added to a solvent and mixed by stirring to prepare a resin composition. The obtained resin composition was applied onto a release film and dried to obtain an adhesive film having each resin thickness.

1. Epoxy resin / dicyclopentadiene type liquid epoxy resin (EP-4088L, manufactured by ADEKA)
・ Dicyclopentadiene type epoxy resin (HP7200HH, manufactured by DIC)
2. High molecular compound / epoxy group-containing acrylic resin (G-2050M, NOF Corporation)
3. Thermosetting agent and curing accelerator / acid anhydride (YH-306, manufactured by Mitsubishi Chemical Corporation)
・ Imidazole (2MAOK-PW, manufactured by Shikoku Chemicals)
4). Inorganic filler, spherical silica (SE1050-SPJ, manufactured by Admatechs, average particle size 0.3 μm)
5. Others ・ Adipic acid (Wako Pure Chemical Industries)

About the obtained adhesive film, using a dynamic viscoelasticity measuring apparatus (DVA-200 manufactured by IT Measurement Control Co., Ltd.), the sample thickness is 600 μm, the frequency is 10 Hz, the strain amount is 0.008%, and the temperature rising rate is 5 ° C./min. The measurement was performed in the measurement temperature range from 0 ° C. to 300 ° C. Based on this result, the shear storage modulus at each contact temperature was determined.
The results are shown in Tables 1 and 2.

(2) Preparation of semiconductor chip supplied with adhesive film The following members 1 and 2 were prepared. For both the members 1 and 2, an adhesive film is applied to the first surface of the silicon chip α or the surface on which the electrode of the silicon chip β is formed, and a stage temperature of 80 ° C. using a vacuum laminator (ATM-812M, manufactured by Takatori). The laminate was laminated under the condition of a vacuum degree of 100 Pa · s, and then the excess adhesive film protruding from the silicon chip was cut and removed with a cutter.
Measured by a nondestructive non-contact measuring method using a laser displacement meter, the height of the electrode on the side to which the adhesive film is supplied is A, and the height of the electrode on the side to which the adhesive film is not supplied is B did.

(Component 1)
Silicon chip α1: Cu bump having a thickness of 50 μm, φ20 μm and height of 10 μm formed on the first surface, and a Sn-3.5Ag solder layer having a thickness of 5 μm formed thereon, the other second surface A TSV chip silicon chip β1 having a Cu / Ni / Au plated pad with a diameter of 20 μm and a height of 5 μm is formed. A Cu / Ni / Au plated pad with a diameter of 20 μm and a height of 5 μm is formed on one side, Chip with no pads or bumps on the other side

(Component 2)
Silicon chip α2: Cu / Ni / Au plated pad having a thickness of 50 μmt, φ20 μm and height of 5 μm is formed on the first surface, and Cu bumps of φ20 μm and height of 10 μm are formed on the other second surface. TSV chip silicon chip β2 formed on which a Sn-3.5Ag solder layer having a thickness of 5 μm is formed: Cu bump having a height of 10 μm is formed, and a Sn-3.5Ag solder layer having a thickness of 5 μm is formed thereon. Chip with no pad or bump formed on the other side

(3) Manufacture of semiconductor device Using flip chip bonder (FC3000S, manufactured by Toray Engineering Co., Ltd.), the first surface of silicon chip A is placed on silicon chip B at a stage temperature of 30 ° C., and the bonding tool is set at various temperatures (temporary bonding). Temperature) and temporarily bonded at 100 N for 2 seconds. As a result, a temporary adhesive body in which one silicon chip A was laminated on the surface side on which the bumps of the silicon chip B were formed via the adhesive film was produced. At this time, the Cu bumps having the solder layers of the respective silicon chips were not yet electrode-bonded.

Next, the temporary bonded body was heated under atmospheric pressure under the following temperature conditions, and Cu bumps having a silicon chip solder layer were electrode bonded. In addition, the load of 100N was applied during the heating of 1-4.
Then, it heated at 170 degreeC for 30 minute (s), and the adhesive film was fully hardened.
1. Heating at 100 ° C. for 5 seconds Heating from 100 ° C. to 280 ° C. in 2.5 seconds 3. Maintaining at 280 ° C. for 5 seconds Cooling down from 280 ° C. to 100 ° C. in 4.5 seconds A semiconductor device was manufactured.

(Evaluation)
The following evaluation was performed about the semiconductor device obtained by the Example and the comparative example.
The results are shown in Tables 1 and 2.

(1) Adhesion evaluation When the temporary adhesion step was completed, the chip was naturally peeled off due to insufficient adhesion, and the chip was not peeled naturally.
In addition, subsequent evaluation was not performed regarding the defective semiconductor device.

(2) Burr length evaluation Ten semiconductor devices obtained were magnified 300 times with an optical microscope, and each semiconductor device in the observation field was photographed from above. Each of the obtained photographs was observed, and for each semiconductor device, a portion having the longest burr protruding around the silicon chip was selected and the length (maximum burr length) was measured. The average value of the maximum burr length for 10 semiconductor devices was determined. When measuring the maximum length of the burr, the length from the end of the base semiconductor chip where the burr extends to the part where the burr is farthest from the end of the semiconductor chip was measured.
A burr length of less than 100 μm was evaluated as “good”, and a burr length of 100 μm or more was evaluated as “bad”.

(3) Evaluation of positional misalignment between electrodes About 10 semiconductor devices obtained, positional misalignment between bumps of silicon chip A and silicon chip B using an X-ray inspection apparatus (SMX-2000, manufactured by Shimadzu Corporation). Was measured. In any of the semiconductor devices, a case where the positional deviation was less than 5 μm was evaluated as “good”, and a case where even one of the positional deviations was 5 μm or more was evaluated as “defective”.

According to the present invention, the length of the burr protruding around the semiconductor chip can be suppressed, and the positional deviation between the electrodes can be suppressed. A method for manufacturing a semiconductor device can be provided.

DESCRIPTION OF SYMBOLS 1 Adhesive film 2 Semiconductor chip with a penetration electrode 3 Semiconductor wafer 4 Dicing blade 5 Burr

Claims (1)

A temporary bonding step in which a semiconductor chip with a through electrode having a solder layer is laminated on a semiconductor wafer and temporarily bonded via an adhesive film, and the semiconductor chip with a through electrode temporarily bonded on the semiconductor wafer is at a solder melting temperature or higher. A method of manufacturing a semiconductor device comprising an electrode bonding step of bonding a through electrode having a solder layer of the semiconductor chip with a through electrode and an electrode on the semiconductor wafer by heating to a temperature of
The adhesive film has a shear elastic modulus at a temperature at which the semiconductor chip with a through electrode is brought into contact with the semiconductor wafer in the temporary bonding step is 0.2 MPa or more and less than 20 MPa,
The adhesive film is supplied in advance to the semiconductor chip with penetrating electrodes or the semiconductor wafer, the height of the electrode on the side to which the adhesive film is supplied in advance is A, and the side on which the adhesive film is not supplied A manufacturing method of a semiconductor device characterized by satisfying the following formula (1), where B is the height of the electrode and X is the thickness of the adhesive film.
0.50 <B / (X−A) ≦ 0.80 (1)

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