JP2016072400A - Semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which when laminating a semiconductor chip with a through electrode on a semiconductor wafer, suppresses voids and causes the through electrode to be favorably conducted and suppresses lengths of burrs projecting around the semiconductor chip.SOLUTION: A semiconductor device manufacturing method comprises: a first process of temporarily placing on a semiconductor wafer 5, a semiconductor chip 2 with a through electrode which has a semiconductor layer with adhesive film 1 being attached, by using a first pressing tool 7 while heating the semiconductor chip 2 at a temperature equal to or higher than a solder melting temperature; and a second process of heating the semiconductor chip 2 temporarily placed on the semiconductor wafer 5 by using a second pressing tool 8 at a temperature equal to or higher than the solder melting temperature to cause the through electrode (via) 4 having the semiconductor layer 3 to be electrically continuous. When assuming that a length of one side of the semiconductor chip 2 is A, a length of one side of the first pressing tool 7 is B and a length of one side of the second pressing tool 8 is C, a ratio B/A is 0.9 and over and a ratio C/A is 0.85 and under.SELECTED DRAWING: Figure 2

Description

The present invention can suppress a void when laminating a semiconductor chip with a through electrode on a semiconductor wafer, can satisfactorily connect the through electrode, and can suppress the length of a burr protruding around the semiconductor chip. The present invention relates to a device manufacturing method.

In recent years, flip chip mounting using a semiconductor chip having protruding electrodes (bumps) made of a solder layer or the like has attracted attention.
Among flip-chip mounting, a three-dimensional stacking technique using a TSV (Through Silicon Via) that has been dramatically improved in performance by stacking a plurality of semiconductor chips has attracted attention. In the TSV stacking technique, generally, a plurality of semiconductor chips with penetrating electrodes (TSV chips) are stacked in multiple layers via an adhesive film at each bonding portion partitioned in a grid pattern on a semiconductor wafer, A semiconductor wafer stack is manufactured by dicing the semiconductor wafer along the dicing line.

For example, Patent Document 1 describes a method for manufacturing a semiconductor device in which semiconductor components are bonded to each other via a semi-cured resin layer and then solder-bonded between terminals of the semiconductor components. It is described that according to the method, productivity and reliability can be improved. Patent Document 1 describes that the melt viscosity at 60 to 150 ° C. of the resin layer is preferably 0.1 to 100,000 Pa · s.

When semiconductor chips are stacked in multiple layers, when a through electrode having a solder layer is made conductive, the resin constituting the adhesive film flows along with solder deformation, and the resin protrudes in the shape of a burr around the semiconductor chip (this is referred to as “burr”). Called). When a burr | flash generate | occur | produces, it may cause a defect by adhering to the adjacent semiconductor chip or creeping up. Such a problem can be solved by widening the distance between the dicing lines, but from the viewpoint of productivity, it is desirable that the distance between the dicing lines is narrow.

As a method of reducing burrs, a method of reducing solder deformation is conceivable. However, in this case, the wettability of the solder deteriorates, and it becomes difficult to make the through electrode conductive well. Therefore, it has been difficult to suppress the length of burrs protruding around the semiconductor chip while maintaining the solder wettability and allowing the through electrode to conduct well.

JP2013-33952A

The present invention can suppress a void when laminating a semiconductor chip with a through electrode on a semiconductor wafer, can satisfactorily connect the through electrode, and can suppress the length of a burr protruding around the semiconductor chip. An object is to provide a method for manufacturing a device.

The present invention provides a first step of temporarily placing a semiconductor chip with a through electrode having a solder layer bonded with an adhesive film on a semiconductor wafer while being heated to a temperature equal to or lower than a solder melting temperature using a first pressure tool. A through-electrode having the solder layer by heating a semiconductor chip with a through-electrode having the solder layer temporarily placed on the semiconductor wafer to a temperature equal to or higher than a solder melting temperature using a second pressure tool. A length of one side of the semiconductor chip with a through electrode having the solder layer, B, a length of one side of the first pressure tool, and the second pressure tool. When the length of one side is C, the ratio B / A is 0.9 or more and the ratio C / A is 0.85 or less.
The present invention is described in detail below.

The present inventors temporarily place a semiconductor chip with a through electrode having a solder layer bonded with an adhesive film on a semiconductor wafer while heating it to a temperature not higher than the solder melting temperature using a first pressure tool. The semiconductor chip with a through electrode having the solder layer temporarily placed on the semiconductor wafer is heated to a temperature equal to or higher than a solder melting temperature using a second pressure tool, and the through hole having the solder layer is formed. In the manufacturing method of the semiconductor device having the second step of conducting the electrode, by changing the size of the first pressing tool and the size of the second pressing tool, the void is suppressed and the solder wettability It was found that the length of the burrs protruding around the semiconductor chip can be suppressed while maintaining the above and making the through electrode satisfactorily conductive.
That is, in the first step, in order to eliminate voids due to air entrapment, a semiconductor chip with a through electrode having a solder layer is parallelized with a relatively large pressure tool having the same size as the semiconductor chip with a through electrode. It is necessary to press. However, if such a relatively large pressure tool is used in the second step as it is, the length of burrs protruding around the semiconductor chip is suppressed while maintaining the solder wettability and satisfactorily conducting the through electrode. It ’s difficult. On the other hand, in the second step, the semiconductor chip having the solder layer is pressed with a relatively small pressure tool to maintain the solder wettability and to make the through electrode satisfactorily conductive. It is possible to suppress the length of burrs protruding around

In the method for manufacturing a semiconductor device of the present invention, first, a semiconductor wafer with a through electrode having a solder layer bonded with an adhesive film is heated to a temperature not higher than the solder melting temperature using a first pressure tool. The first step of temporary placement is performed.

FIG. 1 is a diagram schematically showing an example of the first step in the method for manufacturing a semiconductor device of the present invention. That is, FIG. 1 shows a process of temporarily placing the semiconductor chip 2 with a through electrode having a solder layer on the semiconductor wafer 5 while being heated using the first pressure tool 7.
Here, the through-electrode-attached semiconductor chip 2 having a solder layer has a solder layer 3 and a via 4. In addition, the adhesive film 1 is bonded to the surface having the solder layer 3 in the semiconductor chip 2 with a through electrode having the solder layer. Further, the semiconductor wafer 5 has an electrode 6 facing the solder layer 3.

The method of bonding the adhesive film to the semiconductor chip with a through electrode having the solder layer is not particularly limited. For example, the method of laminating the adhesive film on the semiconductor chip with the through electrode having the solder layer, the adhesive film Is laminated on a semiconductor wafer with a through electrode having a solder layer, and then the semiconductor wafer with a through electrode having the solder layer is separated into semiconductor chips.

By controlling the temperature (also referred to as temporary placement temperature) and the time (also referred to as temporary placement time) for heating to a temperature below the solder melting temperature, the adhesive film is not completely cured, and is thus formed on the semiconductor wafer. The semiconductor chip with a through electrode having the solder layer can be adhered to some extent (that is, temporarily placed).
In such a temporarily placed state, the through electrode having the solder layer is not yet conductive. Conduction of the through electrode having the solder layer is performed in a second step to be described later.

The temporary placement temperature is not particularly limited, and a temperature lower than the curing temperature of the adhesive film may be adopted at a temperature at which temporary placement is possible. A preferable lower limit of the difference from the curing temperature of the adhesive film is 20 ° C., and a preferable upper limit is It is 150 degreeC, a more preferable minimum is 40 degreeC and a more preferable upper limit is 130 degreeC. Specifically, the temporary placement temperature is preferably about 60 to 160 ° C, more preferably about 80 to 140 ° C.
The temporary placement time is preferably 0.1 to 60 seconds.

In the method for manufacturing a semiconductor device of the present invention, after the first step, a semiconductor chip with a through electrode having a solder layer is further formed on the semiconductor chip with a through electrode having the solder layer temporarily placed on the semiconductor wafer. A step of laminating one or more stages may be performed.
By carrying out this process, it is possible to conduct continuity to a plurality of semiconductor chips with penetrating electrodes temporarily placed on the semiconductor wafer, and the semiconductor chips with penetrating electrodes are stacked one by one in order. Productivity can be improved compared with the case where it performs. Further, productivity can be further improved by conducting conduction to the plurality of temporarily placed laminated bodies on the semiconductor wafer.

In the semiconductor device manufacturing method of the present invention, the through-electrode semiconductor chip having the solder layer temporarily placed on the semiconductor wafer is then heated to a temperature equal to or higher than the solder melting temperature using a second pressure tool. Then, a second step of conducting the through electrode having the solder layer is performed.

FIG. 2 is a diagram schematically showing an example of the second step in the method for manufacturing a semiconductor device of the present invention. That is, FIG. 2 shows a process of heating the semiconductor chip 2 with a through electrode having a solder layer temporarily placed on the semiconductor wafer 5 using the second pressure tool 8.

The method of heating to a temperature equal to or higher than the solder melting temperature is not particularly limited. For example, after heating for about 0.1 to 60 seconds at a contact temperature of 60 to 220 ° C. (temperature at which the electrode is brought into contact), 230 to 300 ° C. A method of heating for about 0.1 to 60 seconds at a temperature equal to or higher than the solder melting temperature. By controlling the heating conditions, the through electrode having the solder layer can be conducted well. Also, depending on the heating conditions, the adhesive film can be cured completely and the semiconductor chip with a through electrode having the solder layer can be adhered well.

In the second step, the semiconductor chip with a through electrode having the solder layer is pressed using the second pressurizing tool, the through electrode having the solder layer is conducted, and the sealing film is filled with the adhesive film. It is preferable to do.
Although the pressure at the time of the said press is not specifically limited, 1-200N is preferable. Further, the pressure per electrode is preferably 0.0001 to 1N. If the pressure per electrode is less than 0.0001 N, the electrodes may not contact each other. When the pressure per one electrode exceeds 1N, the electrode may be crushed so that it contacts the adjacent electrode and may be short-circuited.

In the method for manufacturing a semiconductor device of the present invention, the length of one side of the semiconductor chip with a through electrode having the solder layer is A (see FIGS. 1 and 2), and the length of one side of the first pressure tool is B (see FIG. 1), when the length of one side of the second pressure tool is C (see FIG. 2), the ratio B / A is 0.9 or more and the ratio C / A is 0.85 or less. is there.
In the first step, in order to eliminate voids due to air entrapment, the semiconductor chip with the through electrode having the solder layer is parallelized with a relatively large pressure tool having the same size as the semiconductor chip with the through electrode. It is necessary to press. However, if such a relatively large pressure tool is used in the second step as it is, the length of the burrs protruding around the semiconductor chip is suppressed while maintaining the solder wettability and allowing the through electrode to conduct well. Difficult to do. On the other hand, in the second step, by pressing the semiconductor chip with the through electrode having the solder layer with a relatively small pressure tool, while maintaining the solder wettability and making the through electrode satisfactorily conductive, The length of the burr protruding around the semiconductor chip can be suppressed.

In addition, when the semiconductor chip with a through electrode having the solder layer, the first pressure tool, and the second pressure tool are square, the ratio B / A and the ratio C / A are respectively It is defined as a ratio of comparison of lengths of one side, that is, the X-axis.
Further, when the semiconductor chip with a through electrode having the solder layer, the first pressure tool, and the second pressure tool are rectangular, the ratio B / A and the ratio C / A are respectively The length of the X axis is defined as Ax, Bx, and Cx, and the length of the Y axis is defined as Ay, By, and Cy.

If the ratio B / A is less than 0.9, voids cannot be sufficiently eliminated, and the reliability of the semiconductor device is lowered. A preferable lower limit of the ratio B / A is 0.92.
Although the upper limit of the ratio B / A is not particularly limited, the preferable upper limit is 0.97 from the viewpoint of suppressing the resin constituting the adhesive film from creeping up to the semiconductor chip with a through electrode having the solder layer.

When the ratio C / A exceeds 0.85, the burr length cannot be sufficiently suppressed, and defects are likely to occur. Further, if it is attempted to reduce solder deformation in order to reduce burrs, the wettability of the solder deteriorates and it becomes difficult to make the through-electrodes conductive. A preferable upper limit of the ratio C / A is 0.80.
Although the minimum of the said ratio C / A is not specifically limited, A preferable minimum is 0.50 and a more preferable minimum is 0.65.

In the second step, the adhesive film may be completely cured or may be cured halfway. In the case where the adhesive film is not completely cured when the through electrode having the solder layer is made conductive, the adhesive film is completely cured after the through electrode having the solder layer is made conductive. Two-stage heating for curing may be performed.

After the second step, a step of completely curing the adhesive film may be performed separately. If necessary, the adhesive film may be completely cured after the through electrode having the solder layer is conducted. In order to simultaneously conduct the through electrode having the solder layer and cure the adhesive film, Therefore, it is possible to prevent the problem that the yield cannot be reduced due to the uneven heating due to the variation in the thickness or the electrode height of the semiconductor chip with the through electrode.

The adhesive film preferably contains a thermosetting resin and a thermosetting agent.
The said thermosetting resin is not specifically limited, For example, the compound hardened | cured by reaction, such as addition polymerization, polycondensation, polyaddition, addition condensation, ring-opening polymerization, is mentioned. Specific examples of the thermosetting resin include urea resin, melamine resin, phenol resin, resorcinol resin, epoxy resin, acrylic resin, polyester resin, polyamide resin, polybenzimidazole resin, diallyl phthalate resin, xylene resin, alkyl -A benzene resin, an epoxy acrylate resin, a silicon resin, a urethane resin, etc. are mentioned.

The epoxy resin is not particularly limited, and examples thereof include an epoxy resin having a softening point of 150 ° C. or lower, an epoxy resin that is liquid or crystalline solid at room temperature, and the like. These epoxy resins may be used independently and 2 or more types may be used together.

When the epoxy resin is contained, the adhesive film may further contain a polymer compound having a functional group capable of reacting with the epoxy resin (also simply referred to as a polymer compound). The polymer compound serves as a film forming component. Moreover, the hardened | cured material of the said adhesive film has toughness by containing the said high molecular compound, and can express the outstanding impact resistance.

Although the said high molecular compound is not specifically limited, The high molecular compound which has an epoxy group is preferable. The polymer compound having an epoxy group is not particularly limited as long as it is a polymer compound having an epoxy group at the terminal and / or side chain (pendant position). For example, an epoxy group-containing acrylic rubber, an epoxy group-containing butadiene rubber, Examples thereof include bisphenol type high molecular weight epoxy resin, epoxy group-containing phenoxy resin, epoxy group-containing acrylic resin, epoxy group-containing urethane resin, and epoxy group-containing polyester resin.

The said thermosetting agent is not specifically limited, For example, a phenol type hardening | curing agent, a thiol type hardening | curing agent, an amine type hardening | curing agent, an acid anhydride etc. are mentioned. Of these, acid anhydrides are preferred. By using an acid anhydride, the glass transition temperature Tg after curing of the adhesive film can be increased, the α1 region can be enlarged, and the average linear expansion coefficient after curing can be reduced. Thereby, the reliability of the semiconductor device can be improved.

Although content of the said thermosetting agent is not specifically limited, The preferable minimum with respect to a total of 100 weight part of the said thermosetting resin and the said high molecular compound is 5 weight part, and a preferable upper limit is 150 weight part. When the content of the thermosetting agent is less than 5 parts by weight, the cured product of the adhesive film becomes hard and brittle, and the bonding reliability may be lowered. Even if the content of the thermosetting agent exceeds 150 parts by weight, the bonding reliability of the adhesive film may be lowered. The minimum with more preferable content of the said thermosetting agent is 10 weight part, and a more preferable upper limit is 140 weight part.

The adhesive film may further contain a curing accelerator.
Although the said hardening accelerator is not specifically limited, An imidazole compound is preferable. Since the said imidazole compound has high reactivity with the said epoxy resin, the quick curability of the said adhesive film improves by containing the said epoxy resin and the said imidazole compound.

The adhesive film preferably further contains an inorganic filler. By mix | blending the said inorganic filler with the said adhesive film, the linear expansion coefficient after hardening in a whole temperature range can be reduced, and the reliability of a semiconductor device can be improved.

As for the content of the inorganic filler, a preferable lower limit with respect to 100 parts by weight of the total of the thermosetting resin, the thermosetting agent, and the polymer compound is 40 parts by weight, and a preferable upper limit is 400 parts by weight. If the content of the inorganic filler is less than 40 parts by weight, the effect of adding the inorganic filler may be hardly obtained. When content of the said inorganic filler exceeds 400 weight part, although the linear expansion coefficient after hardening of the said adhesive film falls, electrode connection reliability may fall. The more preferable lower limit of the content of the inorganic filler is 50 parts by weight, the more preferable upper limit is 350 parts by weight, the still more preferable lower limit is 60 parts by weight, and the still more preferable upper limit is 300 parts by weight.

The said adhesive film may contain a diluent within the range which does not inhibit the effect of this invention. Although the said diluent is not specifically limited, The reactive diluent taken in into the hardening system of the said adhesive film is preferable. Among these, in order not to deteriorate the bonding reliability of the adhesive film, a reactive diluent having two or more functional groups in one molecule is more preferable.

The content of the diluent is not particularly limited, but a preferred lower limit for the total of 100 parts by weight of the thermosetting resin and the polymer compound is 1 part by weight, and a preferred upper limit is 100 parts by weight. If the content of the diluent is less than 1 part by weight, the effect of adding the diluent may be hardly obtained. When content of the said diluent exceeds 100 weight part, the hardened | cured material of the said adhesive film may become hard and brittle, and joining reliability may fall. A more preferable lower limit of the content of the diluent is 5 parts by weight, and a more preferable upper limit is 70 parts by weight.

The said adhesive film may contain an inorganic ion exchanger as needed. Although content of the said inorganic ion exchanger is not specifically limited, The preferable minimum in the said adhesive film is 1 weight%, and a preferable upper limit is 10 weight%.
The said adhesive film may contain additives, such as a bleed inhibitor, a silane coupling agent, a flux agent, and a thickener, as needed.

The adhesive film preferably has a minimum melt viscosity at 100 to 180 ° C. of 50 to 1500 Pa · s. By using such an adhesive film having a minimum melt viscosity in a narrow range, the generation of voids due to air entrapment is reduced, and thus a more reliable semiconductor device can be obtained.
If the minimum melt viscosity is less than 50 Pa · s, a void may easily occur between the adhesive film and the through electrode having the solder layer. When the minimum melt viscosity exceeds 1500 Pa · s, connection between the through electrode having the solder layer and an electrode formed on a substrate, a semiconductor wafer, or a semiconductor chip facing the through electrode may be hindered. A more preferable lower limit of the minimum melt viscosity is 100 Pa · s, and a more preferable upper limit is 1000 Pa · s.
The minimum melt viscosity at 100 to 180 ° C. is the minimum complex viscosity η * min at 100 to 180 ° C., and the adhesive film is measured using a rheometer (for example, STRESSTECH manufactured by REOLOGICA Co.). It can be determined by performing measurement in the measurement temperature range of 30 to 180 ° C. under the conditions of 600 μm, strain control (1 rad), frequency 10 Hz, and heating rate 20 ° C./min.

The adhesive film preferably has an average linear expansion coefficient at 25 to 265 ° C. after curing of less than 100 ppm / ° C. When the average coefficient of linear expansion after the curing is 100 ppm / ° C. or more, in the reliability evaluation, the deformation stress to the conductive portion is increased, and the electrode connection may be broken. A more preferable upper limit of the average linear expansion coefficient is 90 ppm / ° C., and a more preferable upper limit is 80 ppm / ° C. The lower limit of the average linear expansion coefficient is not particularly limited as long as the conduction of the through electrode having the solder layer is not hindered. However, when the inorganic filler filling ratio is 90% or more and the average linear expansion coefficient is too low, the conduction is reduced. May be inhibited. A preferable lower limit of the average linear expansion coefficient is 25 ppm / ° C.
In addition, the average linear expansion coefficient in 25-265 degreeC after the said hardening is the said adhesion | attachment in the range of 0 degreeC to 300 degreeC using a thermal-stress-strain measuring apparatus (For example, TMA / SS6000 by SII nanotechnology company). The linear expansion coefficient of the cured product of the film can be measured, and the average value can be calculated from the slope of the SS curve of the linear expansion coefficient from 25 ° C. to 265 ° C. obtained at this time.

As a method for adjusting the minimum melt viscosity and the average linear expansion coefficient to the above ranges, for example, an inorganic filler is preferably further blended with the adhesive film preferably containing a thermosetting resin and a thermosetting agent. A method is mentioned. Especially, the method of adjusting the average particle diameter and content of an inorganic filler is preferable.

The adhesive film preferably has a glass transition temperature Tg after curing of 160 to 260 ° C, and more preferably 170 to 240 ° C. By using an adhesive film having Tg in such a range, a semiconductor device with further improved reliability can be obtained.
In addition, Tg after the said hardening is a linear expansion coefficient of the hardened | cured material of the said adhesive film in the range of 0 degreeC to 300 degreeC using a thermal stress strain measuring apparatus (for example, TMA / SS6000 by SII nanotechnology company). Can be obtained from the inflection point of the SS curve obtained at this time.

The method for producing the adhesive film is not particularly limited. For example, a predetermined amount of a thermosetting resin, a thermosetting agent, a curing accelerator, a polymer compound, an inorganic filler, a solvent, or other additives is blended as necessary. And a method of coating the resulting resin composition on a release film and drying it. The mixing method is not particularly limited, and examples thereof include a method using a homodisper, a universal mixer, a Banbury mixer, a kneader and the like.

According to the present invention, when a semiconductor chip with a through electrode is stacked on a semiconductor wafer, voids can be suppressed, the through electrode can be conducted well, and the length of burrs protruding around the semiconductor chip is suppressed. A method of manufacturing a semiconductor device that can be provided can be provided.

It is a figure which shows typically an example of the 1st process in the manufacturing method of the semiconductor device of this invention. It is a figure which shows typically an example of the 2nd process in the manufacturing method of the semiconductor device of this invention.

Examples of the present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples.

(Examples 1-6 and Comparative Examples 1-2)
(1) Manufacture of adhesive film According to the composition described in Table 1, the following materials were added to a solvent and mixed by stirring to prepare a resin composition. The obtained resin composition was applied onto a release film and dried to obtain an adhesive film.
1. Epoxy resin bisphenol A type epoxy resin (1004AF, manufactured by Japan Epoxy Resin Co., Ltd.)
Bisphenol A type epoxy resin (EXA-830CRP, manufactured by DIC)
2. High molecular compound acrylic resin (G-2050M, NOF Corporation)
3. Thermosetting agent and curing accelerator acid anhydride (YH-309, manufactured by Mitsubishi Chemical Corporation)
Imidazole (2MA-OK, manufactured by Shikoku Chemicals)
4). Inorganic filler spherical silica (YA050C-SP1, manufactured by Admatechs)
Spherical silica (SE-1050-SPJ, manufactured by Admatechs)

(2) Measurement of Minimum Melt Viscosity About the obtained adhesive film, using a rheometer (STRESSTECH manufactured by REOLOGICA), sample thickness 600 μm, strain control (1 rad), frequency 10 Hz, heating rate 20 ° C./min The minimum complex viscosity η * min at 100 to 180 ° C. was determined by measuring at a measurement temperature range of 30 to 180 ° C., and was defined as the minimum melt viscosity.

(3) Manufacture of semiconductor device Silicon chips A1, A2 and A3 (a square of 7.3 μm on a side, a thickness of 50 μm, a Ni / Au plated electrode having a diameter of 20 μm and a height of 10 μm on one side is formed. A TSV chip in which a copper bump having a diameter of 20 μm and a height of 10 μm is formed on the surface, and a Sn-3.5Ag solder layer having a thickness of 5 μm is formed on the copper bump, and a silicon chip B (a diameter of 20 μm, high on one side) A 10 μm-thick Ni / Au plated electrode and a chip on which the electrode and bump are not formed on the other surface were prepared.
Using a vacuum laminator (ATM-812M, manufactured by Takatori), an adhesive film is formed on the surface on which the copper bumps having the solder layers of the silicon chips A1, A2, and A3 are formed. The stage temperature is 80 ° C. and the degree of vacuum is 100 Pa · s. Lamination was performed under the conditions, and then the excess adhesive film protruding from the chip was cut off with a cutter.

Eleven temporary stacks were produced by the method described below.
Using a flip chip bonder (FC3000S, manufactured by Toray Engineering Co., Ltd.) and a first pressurizing tool (a square having a length of one side described in Table 1), the surface of the silicon chip A1 with the adhesive film adhered thereto is measured at the stage temperature. Temporary placement was performed on the side on which the electrode of the silicon chip B was formed at 20 N at 60 ° C. and a pressure tool temperature (temporary placement temperature) of 100 ° C. for 2 seconds. Next, the surface of the silicon chip A2 to which the adhesive film was attached was temporarily placed on the surface of the silicon chip A1 to which the adhesive film was not attached under the same conditions. Furthermore, the surface to which the adhesive film of the silicon chip A3 adhered was temporarily placed on the surface to which the adhesive film of the silicon chip A2 did not adhere under the same conditions. In this way, a temporary stacked body was produced in which the silicon chips A1, A2, and A3 were stacked in three layers on the surface side where the electrodes of the silicon chip B were formed via the adhesive film. At this time, the copper bumps having the solder layers of the respective silicon chips are not yet soldered (conducted).
Then, using the flip chip bonder (FC-3000S, manufactured by Toray Engineering Co., Ltd.) and the second pressurizing tool (square having the length of one side described in Table 1), the 11 temporarily placed laminates were atmospheric pressure. Below, the copper bump which has the solder layer of each silicon chip was solder-joined by heating on the following temperature conditions. Thereafter, pressure was applied while heating at 170 ° C. for 30 minutes to completely cure the adhesive film, thereby obtaining 11 semiconductor devices. The load during pressurization was 20N.
(Temperature conditions)
1. Heating at 160 ° C for 5 seconds Heating from 160 ° C to 280 ° C in 2.2 seconds 3. Maintaining at 280 ° C for 5 seconds 4.3 Temperature falling from 280 ° C to 160 ° C in 3 seconds

<Evaluation>
The following evaluation was performed about the semiconductor device obtained by the Example and the comparative example. The results are shown in Table 1.

(1) Electrode connection reliability The 11 semiconductor devices obtained were subjected to cross-sectional polishing, and those having no electrode connection were marked with x. There is no electrode connection between the electrode surface formed on the semiconductor chip facing the through electrode and the electrode surface of the through electrode, and a state in which resin is sandwiched between a part of the facing electrode surface (resin bite) is seen. The case where the resin bite was not observed in the electrode connection portion was indicated as ◯.

(2) Eleven semiconductor devices obtained with voids were observed with an ultrasonic flaw detector SAT (“mi-scope” manufactured by Hitachi Construction Machinery Finetech Co., Ltd.), and the area where the silicon chip was peeled was less than 5% The thing of 10% or more was evaluated as x.

(3) Burr length The eleven semiconductor devices obtained were magnified 300 times with an optical microscope, and each semiconductor device in the observation field was photographed from above. Each of the obtained photographs was looked at, and for each semiconductor device, the part having the longest burr protruding around the silicon chip was selected and the length (maximum burr length) was measured.
The average value of the maximum burr length for 11 semiconductor devices was determined, and the average value of 40 μm or less was evaluated as “◯” and the average value exceeding 40 μm was evaluated as “X”.
When measuring the maximum length of the burr, the length from the end of the base semiconductor chip where the burr extends to the part where the burr is farthest from the end of the semiconductor chip was measured.

According to the present invention, when a semiconductor chip with a through electrode is stacked on a semiconductor wafer, voids can be suppressed, the through electrode can be conducted well, and the length of burrs protruding around the semiconductor chip is suppressed. A method of manufacturing a semiconductor device that can be provided can be provided.

DESCRIPTION OF SYMBOLS 1 Adhesive film 2 Semiconductor chip A with penetration electrode which has solder layer Length of one side of semiconductor chip with penetration electrode which has solder layer 3 Solder layer 4 Beer 5 Semiconductor wafer 6 Electrode 7 First pressurizing tool B First addition Length of one side of the pressure tool 8 Second pressure tool C Length of one side of the second pressure tool

Claims (2)

A first step of temporarily placing a semiconductor chip with a through electrode having a solder layer bonded with an adhesive film on a semiconductor wafer while being heated to a temperature equal to or lower than a solder melting temperature using a first pressure tool;
A semiconductor chip with a through electrode having the solder layer temporarily placed on the semiconductor wafer is heated to a temperature equal to or higher than a solder melting temperature by using a second pressure tool, and the through electrode having the solder layer is made conductive. A second step,
When the length of one side of the semiconductor chip with a through electrode having the solder layer is A, the length of one side of the first pressing tool is B, and the length of one side of the second pressing tool is C The ratio B / A is 0.9 or more, and the ratio C / A is 0.85 or less. The method for manufacturing a semiconductor device according to claim 1, wherein the adhesive film has a minimum melt viscosity at 100 to 180 ° C. of 50 to 1500 Pa · s.

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