JP6226106B2 - Manufacturing method of electronic device - Google Patents

Description

  The present invention relates to an electronic device manufacturing method.

  In recent years, miniaturization, weight reduction, and high performance of electronic devices have been demanded, and in multilayer printed wiring boards, miniaturization and high density of wiring are progressing. Along with this, there is an increasing demand for thinning and miniaturization of a structure for mounting a semiconductor chip on a mounting substrate.

  Therefore, as a method of mounting the semiconductor chip on the mounting substrate, a large number of bump electrodes are formed on the surface of the semiconductor chip electrode, and the chip-side electrode and the substrate-side electrode are electrically connected via the bump electrode. Flip chip mounting to connect to is popular. According to such flip-chip mounting, it is possible to easily realize a multi-pin and downsized connection structure.

  As this type of technology, for example, the technologies described in Patent Documents 1 and 2 can be cited. Patent Document 1 discloses manufacturing a semiconductor device by connecting a semiconductor chip to a mounting substrate via bump electrodes (solder bumps).

  According to Patent Document 1, an adhesive that covers the mounting surface is attached to the mounting substrate before the connection, and the semiconductor is mounted on the mounting substrate via the adhesive when the connection is made. The chip is pressurized while being heated. Thus, it is described that the electrode on the semiconductor chip side and the electrode on the mounting substrate side are electrically connected, and the excess adhesive protrudes outside the semiconductor chip.

  On the other hand, in Patent Document 2, an adhesive is disposed between the semiconductor chip and the package substrate, and after unloading to a second load W2 lower than the first load W, the temperature T2 higher than the melting point of the solder bumps. A technique for heating up to a temperature is described. According to this document, it is described that the semiconductor chip and the package substrate can be satisfactorily bonded without causing solder crushing or solder flow by standing off the semi-cured adhesive.

JP 2001-332583 A JP 2014-63924 A

However, neither of the above Patent Documents 1 and 2 describes the pressure after the temperature is raised to a temperature lower than the melting point of the bump electrode after the temperature is raised to a temperature higher than the melting point of the bump electrode. Moreover, as a result of examination by the present inventors, it has been found that the pressure during such cooling has not been sufficiently studied so far.
As a result of further investigation by the present inventors, when the cooling is performed from a temperature higher than the melting point of the bump electrode to a lower temperature, the volumetric shrinkage of the bump electrode occurs. It was found that a decrease occurred.
Thus, the technique described in the above document has room for improvement in terms of connection reliability.

  The present inventor further examined, and in the step of bonding the bump electrode and the terminal through the resin layer having a flux function, when cooling from a temperature higher than the melting point of the bump electrode to a lower temperature, the bump electrode and the terminal are connected. It has been found that the resin can be prevented from entering the gap caused by the volume shrinkage of the bump electrode by pressing. As a result of further earnest research based on such knowledge, after the first mounting step of pressing the first circuit member and the second circuit member against each other with a predetermined first pressure at a first temperature higher than the melting point of the bump electrode, By performing a second mounting step in which the first circuit member and the second circuit member are pressed against each other with a second pressure higher than the first pressure at a second temperature lower than the melting point of the bump electrode, Since it can suppress that resin of the resin layer which has a flux function invades in between, it discovered that connection reliability could be improved and came to complete this invention.

According to the present invention,
A bump electrode is formed on at least one of the first terminal and the second terminal,
A first circuit member comprising the first terminal on the first surface side;
A second circuit member comprising the second terminal on the second surface side;
A preparation process to prepare,
An arrangement step of arranging a resin layer having a flux function on at least one of the first surface and the second surface;
A temporary mounting step of bringing the bump electrode into contact with the first terminal or the second terminal at a temporary mounting temperature lower than the melting point of the bump electrode;
After the temporary mounting step, a first mounting step of pressing the first circuit member and the second circuit member together at a first temperature higher than the melting point of the bump electrode with a predetermined first pressure;
After the first mounting step, at a second temperature lower than the melting point of the bump electrode, the first circuit member and the second circuit member are pressed against each other with a second pressure higher than the first pressure. and the mounting process, only including,
The method for manufacturing an electronic device is provided, wherein the second mounting step includes a step of starting the pressure to be higher than the first pressure after the temperature is lowered to the melting point of the bump electrode .
Moreover, according to the present invention,
A first circuit member comprising: a first surface; and a first terminal provided on the first surface side;
A second circuit member comprising: a second surface; and a second terminal provided on the second surface side;
A bump electrode provided on at least one of the first terminal and the second terminal;
A resin layer provided on at least one of the first surface and the second surface and having a flux function;
A preparation process to prepare,
The first terminal and the second terminal are pressed against each other at a first pressure of 30 kPa or less through the bump electrode and the resin layer while heating the bump electrode to a first temperature higher than its melting point. Mounting process;
A second mounting step of pressing the first terminal and the second terminal against each other with a second pressure of 50 kPa or more at a second temperature lower than the melting point of the bump electrode;
Only including,
The method for manufacturing an electronic device is provided, wherein the second mounting step includes a step of starting the pressure to be higher than the first pressure after the temperature is lowered to the melting point of the bump electrode .

  According to the present invention, it is possible to realize a method for manufacturing an electronic device having excellent connection reliability.

  The above-described object and other objects, features, and advantages will become more apparent from the preferred embodiments described below and the accompanying drawings.

It is sectional drawing for demonstrating embodiment of the manufacturing method of the electronic device which concerns on embodiment. It is sectional drawing for demonstrating embodiment of the manufacturing method of the electronic device which concerns on embodiment. It is sectional drawing for demonstrating embodiment of the manufacturing method of the electronic device which concerns on embodiment, Comprising: It is a figure which shows the example which arranges two semiconductor elements on a mounting board | substrate. It is sectional drawing for demonstrating embodiment of the manufacturing method of the electronic device which concerns on embodiment, Comprising: It is a figure which shows the example which laminates | stacks two semiconductor elements on a mounting substrate. It is sectional drawing for demonstrating the 1st modification of the manufacturing method of the electronic device which concerns on embodiment. It is sectional drawing for demonstrating the 2nd modification of the manufacturing method of the electronic device which concerns on embodiment. It is sectional drawing for demonstrating the 3rd modification of the manufacturing method of the electronic device which concerns on embodiment. It is sectional drawing for demonstrating the modification of the manufacturing method of the electronic device which concerns on embodiment. It is sectional drawing for demonstrating the modification of the manufacturing method of the electronic device which concerns on embodiment. It is a figure which shows the temperature pressure profile of the manufacturing method of the electronic device which concerns on an Example. It is a figure which shows the temperature pressure profile of the manufacturing method of the electronic device which concerns on an Example.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

  1 to 4 are cross-sectional views for explaining an embodiment of a method for manufacturing an electronic device according to the present invention. In the following description, for convenience of explanation, the upper part of FIGS. 1 to 4 will be described as “upper” and the lower part will be described as “lower”.

  In the manufacturing method of the electronic device according to the present embodiment, the bump electrode 3 is formed on at least one of the first terminal (terminal 14) and the second terminal (terminal 242), and the first surface (upper surface 152) side. A preparation step of preparing a first circuit member (mounting substrate 1) including a first terminal and a second circuit member (semiconductor element 2) including a second terminal on the second surface (lower surface 251) side; The bump electrode 3 is connected to the first terminal or the second terminal in the disposing step of disposing the resin layer 4 having a flux function on at least one of the first surface and the second surface and the temporary mounting temperature lower than the melting point of the bump electrode 3. A first mounting step of pressing the first circuit member and the second circuit member against each other with a predetermined first pressure at a first temperature higher than the melting point of the bump electrode 3 after the temporary mounting step, which is brought into contact with the terminal; After one mounting process and the first mounting process, In a second temperature lower than the melting point of the electrode 3, at higher than the first pressure second pressure presses the said first circuit member and the second circuit members together, and a second mounting step may include.

The inventor has deeply studied the mechanism by which the resin of the resin layer 4 having a flux function enters between the bump electrode 3 and the terminals (terminals 14 and 242). As a result, the melted bump electrode 3 is cooled and re-solidified. It has been found that the resin of the resin layer 4 enters the gap between the bump electrode 3 and the terminal generated due to the volume shrinkage of the bump electrode 3.
The present inventor has further studied that since the above-described gap can be suppressed by pressing the bump electrode 3 and the terminal when the bump electrode 3 is cooled, the resin enters between the bump electrode 3 and the terminal. It was found that it can be suppressed. As a result of further earnest research based on such knowledge, after the first mounting step in which the first circuit member and the second circuit member are pressed against each other with a predetermined first pressure at a first temperature higher than the melting point of the bump electrode 3. By performing a second mounting step in which the first circuit member and the second circuit member are pressed against each other with a second pressure higher than the first pressure at a second temperature lower than the melting point of the bump electrode 3, Since it can suppress that resin of the resin layer 4 which has a flux function enters between terminals, it discovered that connection reliability could be improved and came to complete this invention.

  According to the electronic device manufacturing method of the present embodiment, it is possible to realize a structure of an electronic device having excellent connection reliability.

In the method for manufacturing an electronic device according to the present embodiment, the first pressure in the first mounting step is 0.1 N or more and 50 N or less, and the second pressure in the second mounting step is 10 N or more and 200 N or less. 1 <second pressure / first pressure ≦ 1000 may be satisfied.
In the present embodiment, by setting the second pressure higher than the first pressure, it is possible to suppress the resin of the resin layer 4 from entering between the bump electrode 3 and the terminal and to obtain high connection reliability. Further, by setting the first pressure and the second pressure within the above ranges, the resin layer 4 protrudes from between the first circuit member and the second circuit member from the first mounting process to the second mounting process. Can be suppressed, and the production stability can be improved.
The upper limit value of the pressure ratio of the second pressure to the first pressure (second pressure / first pressure) may be, for example, 1000 or less, 500 or less, or 250 or less.

Hereafter, each process of the manufacturing method of the electronic device of this embodiment is demonstrated.
One embodiment of a method for manufacturing an electronic device according to this embodiment includes: [1] a mounting substrate 1 (first circuit member), a semiconductor element 2 (second circuit member), a bump electrode 3 (connection metal), and a resin layer. 4, a preliminary mounting step of pressing the semiconductor element 2 and the mounting substrate 1 while heating the bump electrode 3 to a temperature lower than its melting point, and [3] the bump electrode 3 A first mounting step in which the semiconductor element 2 and the mounting substrate 1 are pressed against each other while being heated to a temperature higher than the melting point; and [4] the mounting substrate 1 and the semiconductor element 2 are mutually pressed at a temperature lower than the melting point of the bump electrode 3. A second mounting step of pressing, and [5] a resin curing step of heating the resin layer 4 at a temperature lower than the melting point of the bump electrode 3.

Hereinafter, each process will be described sequentially.
[Preparation process]
[1] First, the mounting substrate 1 and the semiconductor element 2 (semiconductor component) are prepared (preparation process).

  A mounting substrate 1 (first circuit member) shown in FIG. 1 includes a base layer 11, a wiring layer 12, and a protective film 13, which are stacked in this order from the bottom of FIG. In such a mounting substrate 1, the upper surface 152 (first surface) is a mounting surface for mounting the semiconductor element 2.

  The base layer 11 is made of a semiconductor material such as silicon. The base layer 11 may be formed with circuit elements such as a transistor, a diode, and a resistor (not shown) as necessary.

  The wiring layer 12 electrically connects the semiconductor element 2 mounted on the mounting substrate 1 and the above-described circuit element, electrically connects the semiconductor element 2 or the circuit element, and an external circuit, An electric wiring for electrically connecting the elements or the semiconductor elements 2 is included, thereby forming a circuit. In each figure, circuit elements and electrical wiring are omitted or simplified.

  Examples of the constituent material of the protective film 13 include organic materials such as polyimide resins, polybenzoxazole resins, polyamide resins, and polyolefin resins, and inorganic materials such as silicon oxide and silicon nitride. .

  The mounting substrate 1 further includes a terminal 14 (first terminal) provided on the upper surface side of the wiring layer 12 and electrically connected to a circuit in the wiring layer 12. The upper end of the terminal 14 protrudes upward from the protective film 13 and is easily brought into contact with the terminal of the semiconductor element 2.

  The mounting substrate 1 is not limited to those described above, and can be replaced by various circuit members such as an organic wiring board, a glass wiring board, and a ceramic wiring board.

  A semiconductor element 2 (second circuit member) shown in FIG. 1 includes a semiconductor chip 21, a wiring layer 22, and a protective film 23, which are stacked in order from the bottom of FIG. In such a semiconductor element 2, the lower surface 251 (second surface) is a mounting surface when mounted on the mounting substrate 1.

  The semiconductor chip 21 is made of a semiconductor material such as silicon. The semiconductor chip 21 is formed with circuit elements such as a transistor, a diode, and a resistor (not shown).

  The wiring layer 22 includes electrical wiring for electrically connecting the above-described circuit elements and for electrically connecting the circuit elements and an external circuit such as the mounting substrate 1. Is formed.

  Moreover, as a constituent material of the protective film 23, the material quoted as a constituent material of the protective film 13 is used, for example.

  The semiconductor element 2 further includes a through electrode 241 penetrating the semiconductor chip 21 in the thickness direction, a terminal 242 (second terminal) provided at the lower end of the through electrode 241, and projecting downward from the lower surface of the semiconductor chip 21. A terminal 243 provided at the upper end of the through electrode 241 and protruding upward from the upper surface of the semiconductor chip 21. That is, the semiconductor element 2 (second circuit member) includes the through electrode 241 having the terminal 242 (second terminal) on the second surface (lower surface 251) side. The through electrode 241 and the terminal 242 and the through electrode 241 and the terminal 243 are electrically connected, respectively. In the present embodiment, the semiconductor element 2 having such a TSV (Through Silicon Via) structure has a thin layer structure in the thickness direction.

  The through electrode 241 is, for example, TSV, and is specifically formed of a metal material including copper, aluminum, iron, nickel, gold, silver, or the like. Further, the terminal 242 and the terminal 243 are also made of these metal materials.

  In addition, the semiconductor element 2 is not limited to the above-mentioned thing, ie, a semiconductor component, For example, various circuit members, such as an organic wiring board, a glass wiring board, and a ceramic wiring board, can be substituted.

  By laminating the mounting substrate 1 and the semiconductor element 2 as described above, a semiconductor device having a connection structure in which highly reliable electrical connection is realized can be obtained.

  On the other hand, in the preparation step, a bump electrode 3 (connection electrode) and a resin layer 4 having a flux function are also prepared.

  The bump electrode 3 is, for example, a solder bump, and electrically and mechanically connects the terminal 242 of the semiconductor element 2 and the terminal 14 of the mounting substrate 1.

  Examples of the solder composing the bump electrode 3 include lead-free solder such as Sn—Ag, Sn—Cu, Sn—Zn, and Sn—Ag—Cu. Of these, lead-free solder containing Sn as a main component and Ag as a subcomponent is preferably used. This lead-free solder has higher metal bonding strength and higher connection reliability than other lead-free solders. For this reason, it is useful as a solder constituting the bump electrode 3.

  In addition, although melting | fusing point of the bump electrode 3 changes according to the kind of solder, it is preferable that it is 130-300 degreeC as an example, and it is more preferable that it is 180-230 degreeC. As a result, when the bump electrode 3 is melted, the heat function exerted on other members is kept to a minimum, and the flux function of the resin layer 4 is sufficiently developed so that highly reliable electrical connection is achieved. be able to.

  1 is provided at the terminal 242 of the semiconductor element 2, the bump electrode 3 may be provided at the terminal 14 of the mounting substrate 1, and both the terminal 242 and the terminal 14 may be provided. May be provided.

  The resin layer 4 is provided on the lower surface 251 of the semiconductor element 2. The resin layer 4 is provided so as to cover the lower surface 251 and also covers the terminals 242 and the bump electrodes 3.

  This resin layer 4 has a flux function. Therefore, when the bump electrode 3 and the terminal 14 are in contact with each other through the resin layer 4, the flux function of the resin layer 4 is exhibited, and the terminal 242 and the terminal 14 are firmly metal-bonded through the bump electrode 3. be able to.

  The resin layer 4 in the preparation process is in an uncured or semi-cured state. Since the resin layer 4 exhibits appropriate fluidity when heated, the resin layer 4 can be excluded from between the bump electrode 3 and the terminal 14.

  In the example of FIG. 1, the resin layer 4 is provided on the lower surface 251 of the semiconductor element 2, but the resin layer 4 may be provided on the upper surface 152 of the mounting substrate 1. It may be provided on both sides.

Hereinafter, the resin layer 4 will be further described in detail.
The resin layer 4 which concerns on this embodiment can contain the component shown by following (a)-(f), for example. This resin layer 4 may be comprised with the resin film which consists of a resin composition containing at least 1 or more of the component shown by the following (a)-(f).

(A) Thermosetting resin The resin layer 4 of this embodiment can contain a thermosetting resin.
More preferably, the thermosetting resin contains an epoxy resin. Epoxy resins are excellent in curability and storage stability. Further, the cured epoxy resin is excellent in heat resistance, moisture resistance and chemical resistance. In addition, the thermosetting resin mentioned above is not limited to the example mentioned above.

  The epoxy resin mentioned above contains two or more epoxy groups in 1 molecule, for example. Specifically, examples of the epoxy resin include a monofunctional epoxy resin, a bifunctional epoxy resin, and a polyfunctional epoxy resin.

  Among these, examples of the bifunctional epoxy resin include bisphenol A type epoxy resin and bisphenol F type epoxy resin.

  Examples of the polyfunctional epoxy resin include phenol novolac type epoxy resin, biphenyl type epoxy resin, biphenyl aralkyl type epoxy resin, naphthalene skeleton type epoxy resin, tris (hydroxyphenyl) methane type epoxy resin, dicyclopentadiene type epoxy resin. Etc.

  The epoxy resin described above is preferably at least partially liquid at 25 ° C. Thereby, the resin layer 4 can be satisfactorily filled around the terminals 242. Furthermore, the unevenness of the lower surface 251 of the semiconductor element 2 (for example, the unevenness generated by the terminal 242) can be effectively embedded. Furthermore, when the resin layer 4 is formed into a film, flexibility and flexibility can be imparted to the film. For this reason, the film excellent in handling property can be obtained.

  The epoxy resin described above is particularly preferably a bisphenol A type epoxy resin or a bisphenol F type epoxy resin. Thereby, the resin layer 4 can be satisfactorily adhered to the semiconductor element 2. Furthermore, the resin layer 4 has excellent mechanical properties after curing.

  The epoxy resin may be a tris (hydroxyphenyl) methane type epoxy resin, a naphthalene skeleton type epoxy resin, or the like, and is preferably a tris (hydroxyphenyl) methane type epoxy resin. In this case, since the epoxy resin has a high glass transition point Tg, the thermal reliability is increased.

  The content of the thermosetting resin is preferably 10% by mass or more and 75% by mass or less with respect to the total solid content of the resin layer 4. More specifically, the content of the thermosetting resin is preferably 15% by mass or more and 45% by mass or less with respect to the total solid content of the resin layer 4. When the content of the thermosetting resin is within the above-described range, the cured resin layer 4 has particularly excellent heat resistance and mechanical properties. However, the content of the thermosetting resin is not limited to the above-described range.

(B) Compound having a flux function The resin layer 4 may contain a compound having a flux function.
The resin layer 4 has a flux function as described above. This flux function is manifested when the resin layer 4 contains a compound having a flux function. By exhibiting the flux function, it becomes easy to remove the metal oxide film present on the surface of the bump electrode 3, and good metal bonding is realized.

  The bump electrode 3 is used for connection between the terminal 14 and the terminal 242 at a temperature lower than the melting point in a temporary mounting process and a second mounting process described later. Therefore, when the resin layer 4 contains a compound having a flux function, good metal bonding can be realized even at a low temperature.

  The compound having a flux function is not particularly limited as long as it has a function of removing the metal oxide film on the surface of the bump electrode 3, but a compound having one or both of a carboxyl group and a phenolic hydroxyl group is preferable. . From the viewpoint of bonding reliability, the compound having a flux function is preferably a carboxyl group or a compound having both a carboxyl group and a phenolic hydroxyl group.

  In addition, examples of the compound having a flux function include acid anhydride compounds.

  The blending amount of the compound having a flux function in the total solid content of the resin layer 4 is not particularly limited, but is preferably 0.1% by mass or more and 30% by mass or less, and 0.5% by mass or more and 20% by mass or less. More preferably, it is 1.0 mass% or more and 10 mass% or less.

  When the compounding amount of the compound having the flux function is within the above range, the flux function can be improved, and when the resin layer 4 is cured, an unreacted epoxy resin or a compound having the flux function remains. Can be prevented, and migration resistance can be improved.

  In addition, among the compounds that act as curing agents for epoxy resins, there are compounds having a flux function (hereinafter, such compounds are also referred to as “curing agents having a flux function”). For example, aliphatic dicarboxylic acids, aromatic dicarboxylic acids and the like that act as curing agents for epoxy resins also have a flux function. In the present embodiment, such a curing agent having a flux function can also be suitably used.

  In addition, the compound which has a flux function provided with a carboxyl group has one or more carboxyl groups in the molecule, and may be liquid or solid. Moreover, the compound which has a flux function provided with a phenolic hydroxyl group has one or more phenolic hydroxyl groups in the molecule, and may be liquid or solid. In addition, the compound having a flux function including a carboxyl group and a phenolic hydroxyl group has one or more carboxyl groups and phenolic hydroxyl groups in the molecule, and may be liquid or solid. These may be used alone or in combination of two or more.

  Of these, examples of the compound having a flux function having a carboxyl group include aliphatic carboxylic acids and aromatic carboxylic acids.

  As aliphatic carboxylic acid which concerns on the compound which has a flux function provided with a carboxyl group, the compound shown by following General formula (1) is mentioned, for example. Examples of the compound include n = 3 glutaric acid, n = 8 sebacic acid, and the like.

_{HOOC- (CH 2) n -COOH (} 1)
(In formula (1), n represents an integer of 1 or more and 20 or less.)

  Examples of the aromatic carboxylic acid related to the compound having a flux function having a carboxyl group include phenolphthalin and diphenolic acid.

  Among these compounds having a flux function having a carboxyl group, the activity of the compound having a flux function, the amount of outgas generated during curing of the resin composition, and the elastic modulus and glass transition temperature of the cured resin composition From the viewpoint of good balance such as the above, the compound represented by the general formula (1) is preferable. And among the compounds shown by the said General formula (1), while the compound whose n is 3-10 can suppress that the elasticity modulus in the resin layer 4 after hardening increases, the semiconductor element 2 or It can be preferably used in that the adhesion between circuit members such as the mounting substrate 1 can be improved.

  Examples of the compound having a flux function having a phenolic hydroxyl group include phenols.

  A compound having either a carboxyl group or a phenolic hydroxyl group as described above, or a compound having both a carboxyl group and a phenolic hydroxyl group is taken in three-dimensionally by reaction with an epoxy resin. Therefore, from the viewpoint of improving the formation of a three-dimensional network of the epoxy resin after curing, it is preferable to use a curing agent having a flux function as the compound having a flux function. As a hardening | curing agent which has a flux function, the compound provided with the hydroxyl group which can be added to an epoxy resin and the carboxyl group which shows a flux function (oxide film removal function) in 1 molecule is mentioned, for example.

  Examples of the curing agent having such a flux function include salicylic acid (2-hydroxybenzoic acid), 3-hydroxybenzoic acid, 4-hydroxybenzoic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, and gentidine. Benzoic acid derivatives such as acids (2,5-dihydroxybenzoic acid), 2,6-dihydroxybenzoic acid, 3,4-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 1, Naphthoic acid derivatives such as 4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3,7-dihydroxy-2-naphthoic acid, phenolphthaline, diphenolic acid, etc. 1 type (s) or 2 or more types are used in combination.

  Among these, it is preferable to use a compound having one carboxyl group and one hydroxyl group in the molecule as the compound having a flux function from the balance between the high flux function and the appropriate reactivity with respect to the thermosetting resin. . Thereby, the metal oxide film on the surface of the bump electrode 3 can be effectively removed even under heating conditions at a relatively low temperature.

  Particularly preferred compounds include compounds having one phenolic hydroxyl group and one carboxyl group in the molecule, and specifically include salicylic acid (2-hydroxybenzoic acid), 3-hydroxybenzoic acid, 4-hydroxybenzoic acid. Mention may be made of acids.

  Since these compounds are relatively easily available and have extremely high flux activity, they can be particularly preferably used in this embodiment.

  Further, the blending amount of the curing agent having a flux function in the total solid content of the resin layer 4 is not particularly limited, but is preferably 0.1% by mass or more and 30% by mass or less, and 0.5% by mass or more. It is more preferably 20% by mass or less, and particularly preferably 1.0% by mass or more and 10% by mass or less. Thereby, while being able to improve the flux function of the resin layer 4, it is taken in stably in a thermosetting resin.

  Examples of acid anhydrides having a flux function include alicyclic acid anhydrides and aromatic acid anhydrides.

  Examples of the alicyclic acid anhydride relating to the compound having a flux function include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, and trialkyltetrahydrophthalic anhydride.

  Examples of the aromatic acid anhydride related to the compound having a flux function include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic acid anhydride, and the like.

  When an epoxy resin is used as the thermosetting resin, the compounding ratio (mass ratio) between the epoxy resin and the compound having a flux function is not particularly limited, but (epoxy resin / compound having a flux function) is 0.5 or more and 12 Is preferably 2 or less and particularly preferably 2 or more and 10 or less. By setting (epoxy resin / compound having a flux function) within the above range, the resin layer 4 can be stably cured, and migration resistance can be improved.

(C) Film forming resin The resin layer 4 may contain a film forming resin.
The film forming resin improves the film forming property of the resin layer 4. The film-forming resin is soluble in an organic solvent and can form a film alone.

  The film forming resin is preferably any one of (meth) acrylic resin, phenoxy resin, polyimide resin, and acrylonitrile-butadiene copolymer. In this case, since the film-forming resin is excellent in flexibility, the temperature cycle reliability is improved. As the phenoxy resin, for example, a bisphenol A type phenoxy resin may be used. In the present embodiment, “(meth) acrylic resin” refers to (meth) acrylic acid polymer, (meth) acrylic acid derivative polymer, (meth) acrylic acid and other monomers. Or a copolymer of a derivative of (meth) acrylic acid and another monomer. Furthermore, “(meth) acrylic acid” means “acrylic acid” or “methacrylic acid”.

  The weight average molecular weight of the film-forming resin is preferably 10,000 or more, more preferably 20,000 to 1,000,000, and even more preferably 30,000 to 900,000. When the weight average molecular weight of the film forming resin is within the above range, the film forming resin can particularly enhance the film forming property of the resin layer 4.

  In addition, when preparing the resin layer 4 as a film, it is preferable that content of film forming resin is 0.5 mass% or more and 50 mass% or less with respect to the total solid of the resin layer 4, 1 mass % To 40% by mass, more preferably 3% to 35% by mass. When the content of the film forming resin is within the above range, the fluidity of the resin layer 4 can be suppressed, and the film (resin layer 4) can be easily handled. However, the content of the film forming resin is not limited to the above-described range.

(D) Curing accelerator The resin layer 4 may contain a curing accelerator.
A hardening accelerator accelerates | stimulates hardening of (a) thermosetting resin mentioned above. A hardening accelerator can be suitably selected according to the kind of thermosetting resin. The curing accelerator is, for example, an imidazole compound. Examples of the imidazole compound include 2-phenyl-4-methylimidazole, and the melting point is preferably 150 ° C. or higher. Thereby, before the curing of the resin layer 4 is completed, the components constituting the bump electrode 3 can easily move on the surface of the terminal 14 or the surface of the terminal 242. Thereby, the electrical connection between the terminal 14 and the bump electrode 3 and the electrical connection between the terminal 242 and the bump electrode 3 can be improved.

(E) Filler The resin layer 4 of this embodiment can contain a filler. Moreover, the resin layer 4 can contain an inorganic filler as a filler.
The filler reduces the linear expansion coefficient of the resin layer 4 and adjusts the minimum melt viscosity of the resin layer 4. The filler includes, for example, at least one of an organic filler and an inorganic filler. Examples of the organic filler include resin particles and rubber particles. Examples of the constituent material of the inorganic filler include silica, mica, alumina, and the like, and one or more of these are used.

From the viewpoint of improving the reliability of the circuit member connection structure, the filler preferably contains an inorganic filler. Thereby, the linear expansion coefficient of the resin layer 4 can be reduced, and the reliability of the connection structure of a circuit member can be improved. More specifically, the inorganic filler preferably contains silica from the viewpoint of thermal conductivity of the cured resin layer 4. The shape of the silica is, for example, at least one of crushed silica and spherical silica. In the present embodiment, the shape of silica is preferably spherical silica.
In the present embodiment, the inorganic filler is preferably a surface-hydrophobized inorganic filler whose surface is modified with a hydrophobic functional group. Thereby, the compatibility of the resin component such as an epoxy resin or a compound having a flux function contained in the resin composition and the inorganic filler can be improved. As the surface hydrophobized inorganic filler, for example, hydrophobic silica may be used.

  The average particle diameter of the filler is not particularly limited, but is preferably 500 nm or less, and more preferably 300 nm or less. On the other hand, the lower limit value of the average particle diameter of the filler is, for example, 5 nm. When the average particle diameter of the filler is within the above range, the viscosity of the resin layer 4 can be made moderate. Further, the filler can be prevented from aggregating in the resin layer 4. Furthermore, when the light passes through the resin layer 4, it is possible to reduce the filler from inhibiting visible light transmission. In this case, even if the terminal 242 and the bump electrode 3 are embedded in the resin layer 4, the position of the terminal 242 and the position of the bump electrode 3 can be well recognized using visible light. When the filler contains silica, the visible light transmission is further improved. Thereby, alignment of the semiconductor element 2 becomes easy. However, the average particle diameter of the filler is not limited to the above-described range.

  The average particle diameter of the filler is, for example, the particle diameter when the cumulative particle diameter is 50% in the volume-based particle size distribution obtained by the laser diffraction method.

  The content of the filler is preferably 0.1% by mass or more and 80% by mass or less, and more preferably 20% by mass or more and 70% by mass or less in the total solid content of the resin layer 4. When the content of the filler is within the above range, the linear expansion coefficient difference between the semiconductor element 2 and the resin layer 4 can be reduced after the resin layer 4 is cured. Thereby, the stress which arises between the semiconductor element 2 and the resin layer 4 can be reduced. For this reason, it can suppress more reliably that the semiconductor element 2 peels from the resin layer 4. FIG. Furthermore, it can suppress that the elasticity modulus of the resin layer 4 after hardening becomes it too high that content of a filler exists in the said range. For this reason, the reliability of the connection structure of a circuit member increases. However, the content of the filler is not limited to the above-described range.

(F) Other additive The resin layer 4 may contain components other than (a)-(e) mentioned above as needed. For example, the resin layer 4 according to the present embodiment may include a phenolic curing agent having a weight average molecular weight of 300 or more and 2500 or less. Thereby, the glass transition temperature of the hardened | cured material of the resin layer 4 can be raised, and also it becomes possible to improve ion migration resistance. Moreover, moderate flexibility can be imparted to the resin layer 4. The phenolic curing agent is preferably a phenol novolac resin or a cresol novolac resin.

The resin layer 4 may further include a silane coupling agent. The silane coupling agent includes, for example, one or two selected from an epoxy silane coupling agent and an aromatic-containing aminosilane coupling agent.
The resin layer 4 may further contain an additive. The additive contains, for example, one or more selected from plasticizers, stabilizers, tackifiers, lubricants, antioxidants, antistatic agents, and pigments.

  The content of the phenol-based curing agent is preferably 1% by mass or more and 30% by mass or less, and more preferably 3% by mass or more and 25% by mass or less in the entire resin layer 4. By setting the content of the phenolic curing agent within the above range, the unevenness of the lower surface 251 of the semiconductor element 2 can be effectively embedded in the resin layer 4. Furthermore, the glass transition temperature of the hardened | cured material of the resin layer 4 can be raised effectively by making content of a phenol type hardening | curing agent into the said range. However, content of a phenol type hardening | curing agent is not limited to the range mentioned above.

  The material for forming the resin layer 4 can be prepared by mixing or dispersing the above-described components. The mixing method and dispersion method of each component are not specifically limited, It can mix or disperse | distribute by a conventionally well-known method. More specifically, for example, the above-described forming material is prepared in a liquid state by mixing the above components in a solvent or without a solvent. The solvent used at this time is inactive with respect to each component. Examples of the solvent include acetone, methyl ethyl ketone (MEK), methyl isobutyl ketone (MIBK), and those containing one or more of these are used.

[Temporary mounting process]
[2] Next, while heating the bump electrode 3 to a temperature lower than its melting point, the semiconductor element 2 is pressed against the mounting substrate 1 from above (temporary mounting step). That is, as shown in FIG. 2A, the mounting substrate 1 and the semiconductor element 2 are pressed against each other. Thereby, the terminal 14 of the mounting substrate 1 and the bump electrode 3 provided on the terminal 242 of the semiconductor element 2 approach each other and come into contact with each other.
At this time, the resin layer 4 interposed between the terminal 14 and the bump electrode 3 is pushed away by the approach of the terminal 14 and the bump electrode 3. As a result, when the terminal 14 and the bump electrode 3 are in contact with each other, so-called resin biting is prevented and the resin layer 4 is removed at the contact point (see FIG. 2B). The heating temperature in the temporary mounting process is lower than the melting point of the bump electrode 3, but by setting the temperature to such a temperature, significant softening of the resin layer 4 can be suppressed, and the mounting substrate 1, the semiconductor element 2, The resin layer 4 can be prevented from protruding from between the bumps, and the bump electrode 3 does not melt, so that the resin layer 4 can be pushed away efficiently.

  Here, when the bump electrode 3 is heated, the temperature of the mounting substrate 1 and the semiconductor element 2 rises accordingly. By the way, in the mounting substrate 1 and the semiconductor element 2, since the member mainly comprised by the semiconductor material and the member mainly comprised by the resin material are laminated | stacked, respectively, curvature is easy to generate | occur | produce. This warpage increases as the heated temperature increases.

  Therefore, as in the present embodiment, the bump electrode 3 is heated to a temperature lower than its melting point, so that the mounting substrate 1 and the semiconductor element 2 can be prevented from greatly warping in this step. Thereby, even when the size of the mounting substrate 1 or the semiconductor element 2 is large, the amount of displacement due to warping can be kept small. As a result, for example, when a plurality of terminal pairs each including the terminal 14 and the terminal 242 are provided, it is possible to prevent the inter-terminal distance from becoming uneven depending on the position of the terminal pair. As a result, the conductivity of each terminal pair can be made uniform.

  The heating temperature in the temporary mounting process may be lower than the melting point of the bump electrode 3, but when the melting point of the bump electrode 3 is Tm [° C], it is preferably Tm-5 ° C or less, and Tm-10 ° C or less. It is more preferable that it is Tm-20 ° C or less. Thereby, since the bump electrode 3 is not melted, the bump electrode 3 can suppress the solder flow in this step. Moreover, the displacement amount accompanying the curvature of the mounting substrate 1 or the semiconductor element 2 can be suppressed small, and for example, the conductivity of each terminal pair can be made uniform.

  On the other hand, the lower limit value of the heating temperature in the temporary mounting step is not particularly set, but is preferably Tm-140 ° C or higher, and more preferably Tm-130 ° C or higher. Thereby, since the resin layer 4 can be sufficiently softened, the resin layer 4 interposed between the terminal 14 and the bump electrode 3 can be pushed out more reliably. Further, since the flux function of the resin layer 4 is manifested, the metal oxide film on the surface of the bump electrode 3 can be removed in this step, and the heating temperature in this step is lower than the melting point of the bump electrode 3. It is preferable that an alloy or an intermetallic compound accompanying atomic diffusion is generated between the bump electrode 3 and the terminal 14 and between the bump electrode 3 and the terminal 242, respectively. Metal bonding can proceed promptly and reliably.

  In addition, the specific heating temperature in the provisional mounting process changes as appropriate according to the melting point of the bump electrode 3, but as an example, when the melting point of the bump electrode 3 composed of solder bumps is 221 ° C., 80 ° C. or more and 220 ° It is preferable that it is below ℃, and it is more preferable that it is 100 ° C or more and 220 ° C or less.

  In addition, the time for applying pressure while heating in the temporary mounting step is not particularly limited, but is preferably 0.1 seconds or more and 60 seconds or less, and more preferably 0.5 seconds or more and 10 seconds or less. Thereby, even when there are a plurality of terminal pairs, their heating temperatures can be made sufficiently uniform, and the conductivity of each terminal pair can be made uniform after the second mounting step described later. Moreover, sufficient time is secured to push away the resin layer 4.

  In the present embodiment, the bump electrode 3 may be heated by heat conduction through a jig (for example, a flip chip bonder stage or head) for pressing the mounting substrate 1 and the semiconductor element 2 together. You may carry out by heating the atmosphere which arrange | positions the board | substrate 1 and the semiconductor element 2. FIG. In this case, the mounting substrate 1, the resin layer 4, and the semiconductor element 2 arranged on the stage are pressed against the lower surface 251 of the semiconductor element 2 with a flip chip bonder head. When the number of stacked circuit members is two, the temperature of the pressing member such as the head can be considered to be approximately the same as the temperature of the semiconductor element 2 from the mounting substrate 1. On the other hand, when the number of laminated circuit members is three or more, a temperature difference may occur between the uppermost layer and the lowermost layer. In that case, the entire circuit member including the lowermost circuit member The temperature of the pressing member is adjusted so that the temperature of the pressing member becomes equal to or higher than a predetermined value.

  In the temporary mounting step of the present embodiment, the temporary mounting pressure that presses the terminal 14 of the mounting substrate 1 and the terminal 242 of the semiconductor element 2 together can be, for example, an arbitrary pressure profile. In the temporary mounting process, the initial pressure may be maintained from the start to the end of the temporary mounting process from the viewpoint of improving the efficiency of the productivity, but the resin layer 4 between the terminal 14 and the bump electrode 3 is surely removed. In view of the above, a step of increasing the pressure from the initial pressure may be performed.

  For example, in the temporary mounting process, when the terminal 14 of the mounting substrate 1 and the terminal 242 of the semiconductor element 2 are pressed against each other, the pressure (first pressure) when the terminal 14 and the terminal 242 are pressed against each other in the first mounting process described later. You may implement the process pressed by higher pressure. Thereby, the distance between the terminal 14 and the terminal 242 is sufficiently close, and the resin layer 4 between the terminal 14 and the bump electrode 3 can be more reliably removed. As a result, it is possible to create a state in which the terminal 14 and the bump electrode 3 are in contact (so-called resin biting can be prevented). By forming such a state in the temporary mounting process, when the bump electrode 3 is melted in the first mounting process described later, the metal bonding is quickly performed even in a short time. Finally, a highly reliable electrical connection can be achieved between the terminal 14 and the terminal 242 via the bump electrode 3.

  Further, in the temporary mounting process of the present embodiment, the first circuit member (mounting substrate 1) and the second circuit are heated before the first temperature in the first mounting process described later is raised to a temperature higher than the melting point of the bump electrode 3. After raising the temporary mounting pressure which presses a member (semiconductor element 2) mutually, the process of lowering the temporary mounting pressure again can be included. That is, the temporary mounting step may be a step of increasing the pressure from the initial pressure and then decreasing the pressure again at a temporary mounting temperature lower than the melting point of the bump electrode 3. Thereby, the contact point of the bump electrode 3 which is not melted can be deformed until it becomes a contact surface, and the resin layer 4 can be highly suppressed from entering between the bump electrode 3 and the flat surface of the terminal. Therefore, the connection reliability between the bump electrode 3 and the terminal can be further enhanced.

  The temporary mounting pressure when pressing the terminal 14 and the terminal 242 together in the temporary mounting step is preferably, for example, a pressure higher than the first pressure, preferably 50 kPa to 1500 kPa, and preferably 100 kPa to 1000 kPa. Is more preferable. By setting the pressure within the above range, it is possible to sufficiently eliminate the resin layer 4 between the terminal 14 and the terminal 242 while suppressing the protrusion of the resin layer 4 in the temporary mounting process. For this reason, the resin biting of the resin layer 4 can be suppressed, and a structure having high connection reliability can be realized.

  By setting the temporary mounting pressure to be equal to or higher than the above lower limit value, the terminal 14 and the terminal 242 are brought into contact with the melted bump electrode 3 even when the mounting substrate 1 or the semiconductor element 2 is deformed, for example. Connection reliability can be improved. On the other hand, by setting the temporary mounting pressure to the upper limit value or less, it is possible to suppress the resin layer 4 from being excessively pushed out between the mounting substrate 1 and the semiconductor element 2.

In this specification, the pressure applied when the terminals 14 and 242 are pressed against each other is determined by applying a load applied when the mounting substrate 1 and the semiconductor element 2 are pressed against each other to the upper surface 152 of the mounting substrate 1 and the semiconductor element 2. It is obtained by dividing by the area of the portion where the lower surface 251 overlaps (area of the common portion). For example, when the area of the common part is 100 mm ² (when the semiconductor element 2 of 10 mm × 10 mm is used), a load of 5 N or more and 50 N or less is applied between the mounting substrate 1 and the semiconductor element 2 for 50 kPa or more and 500 kPa or less. It corresponds to the pressure generated when applied. Hereinafter, “pressure in a unit area” indicates a product of the area and pressure, and corresponds to a load.
In addition, what is necessary is just to provide this process as needed and may be abbreviate | omitted.

  In the temporary mounting step, the temporary mounting pressure in a unit area of 10 mm × 10 mm is, for example, 5N or more and 150N or less, preferably 10N or more and 100N or less, and more preferably 30N or more and 80N or less. Thereby, even in the temporary mounting process of the second circuit member having the large area and the first circuit member, the resin layer 4 between the terminal 14 and the terminal 242 can be sufficiently eliminated, and high connection reliability can be achieved. Can be realized.

[First mounting process]
[3] Next, the mounting substrate 1 and the semiconductor element 2 are pressed against each other while the bump electrode 3 is heated to a temperature higher than its melting point (first mounting step). As a result, the bump electrode 3 is melted and spreads between the terminals 14 of the mounting substrate 1 and the terminals 242 of the semiconductor element 2. As a result, the terminal 14 and the terminal 242 are reliably bonded and alloying proceeds. A space between the terminal 14 and the terminal 242 is filled with the melted bump electrode 3 (see FIG. 2C).

  Here, in the first mounting step, the first pressure is preferably set to be low in a temperature region heated to a temperature higher than the melting point of the bump electrode 3. Thereby, it is possible to suppress the resin layer 4 in a state of high fluidity from protruding between the mounting substrate 1 and the semiconductor element 2.

  The heating temperature (first temperature) in the first mounting process may be higher than the melting point of the bump electrode 3, but is preferably Tm + 5 ° C. or higher, and more preferably Tm + 10 ° C. or higher. Thereby, the bump electrode 3 can be sufficiently melted and a highly reliable metal joint can be formed. Moreover, since the flux function which the resin layer 4 has fully expresses, the reliability of the metal joining produced between the fuse | melted bump electrode 3 and the terminal 14 and the terminal 242 can be improved more.

  On the other hand, the upper limit value of the heating temperature in the first mounting step is not particularly set, but is preferably Tm + 150 ° C. or less, and more preferably Tm + 120 ° C. or less. Thereby, generation | occurrence | production of heat denaturation, thermal decomposition, etc. can be suppressed in parts other than the bump electrode 3. FIG.

  Further, the temperature difference between the heating temperature in the temporary mounting step and the heating temperature in the present step (first mounting step) is not particularly limited, but is preferably 30 ° C. or higher, and is 50 ° C. or higher and 250 ° C. or lower. Is more preferable. Thereby, even when there are a plurality of terminal pairs described above, the effects in the provisional mounting process and the effects in this process can be surely exhibited for each terminal pair.

  In addition, although the specific heating temperature in a 1st mounting process changes suitably according to melting | fusing point of the bump electrode 3, it is preferable that it is 220-400 degreeC as an example, and it is more preferable that it is 240-380 degreeC, More preferably, it is 260-350 degreeC.

  Moreover, in the first mounting step, the time for applying the first pressure while heating is not particularly limited, but is preferably 0.1 seconds or more and 30 seconds or less, more preferably 1 seconds or more and 10 seconds or less. preferable. Thereby, the bump electrode 3 can be sufficiently melted, and the reliability of the metal bonding generated between the terminal 14 and the terminal 242 can be further increased. Moreover, it can suppress that the fuse | melted bump electrode 3 flows out more than necessary.

  The bump electrode 3 is heated by heat conduction through a jig (for example, a flip chip bonder stage or head) for pressing the mounting substrate 1 and the semiconductor element 2 together.

  In the first mounting step, the pressure may be lowered before reaching a temperature higher than the melting point from a temperature lower than the melting point of the bump electrode 3, but the pressure may be gradually decreased simultaneously with the temperature rise. That is, in the first mounting step, it is preferable to set the pressure to a low first pressure before reaching the first temperature higher than the melting point of the bump electrode 3. Thereby, the resin protrusion of the resin layer 4 can be suppressed. In the first mounting process, the first pressure means a pressure in a first temperature region higher than the bump electrode 3.

In the first mounting step, the upper limit value of the first pressure in a unit area of 10 mm × 10 mm is, for example, 50 N or less, preferably less than 10 N, and more preferably 5 N or less. Thereby, the resin protrusion of the resin layer 4 can be sufficiently suppressed. Moreover, the lower limit value of the first pressure is not particularly limited, but may be, for example, 0.1 N or more, or 0.2 N or more. Thereby, it can suppress that the bump electrode 3 and the terminal 14 leave | separate, and can implement | achieve a firm junction structure.
In the first mounting step, the minimum value of the first pressure in a unit area of 10 mm × 10 mm is, for example, 50 N or less, preferably less than 10 N, and more preferably 5 N or less.

  Further, in the first mounting step, when the terminals 14 of the mounting substrate 1 and the terminals 242 of the semiconductor element 2 are pressed against each other, for example, they may be pressed with a pressure (first pressure) of 30 kPa or less. Accordingly, an appropriate pressure is applied to the resin layer 4 sandwiched between the upper surface 152 of the mounting substrate 1 and the lower surface 251 of the semiconductor element 2. As a result, sufficient adhesive strength is generated between the upper surface 152 and the resin layer 4 and between the lower surface 251 and the resin layer 4. On the other hand, by pressing each other with an appropriate pressure, a change in the distance between the terminal 14 and the terminal 242 caused by the repulsive force of the resin layer 4 is suppressed. As a result, even when the bump electrode 3 is melted, the distance between the terminal 14 and the terminal 242 can be easily maintained constant.

  Note that, by setting the first pressure for pressing the terminal 14 and the terminal 242 to each other in the first mounting step to be equal to or less than the above upper limit value, the distance between the terminal 14 and the terminal 242 becomes too small, and the mounting substrate 1 and the semiconductor element 2 It can suppress that the resin layer 4 protrudes from between. Since the protruding resin layer 4 spreads outside the outer shape of the semiconductor element 2, for example, when mounting a plurality of semiconductor elements 2 on the mounting substrate 1, the protruding resin layer 4 is adjacent to the adjacent semiconductor element 2. May be hindered, or when the mounting substrate 1 between adjacent semiconductor elements 2 is to be cut, the cutting may be hindered. By suppressing the resin protrusion of the resin layer 4, even when a plurality of second circuit members are mounted at a high density in the plane of the first circuit member, the manufacturing stability of the manufacturing method of the electronic device can be maintained. it can.

Here, FIG. 3 is a diagram illustrating an example in which two semiconductor elements 2 are provided in the plane of the mounting substrate 1.
In the example shown in FIG. 3, two semiconductor elements 2 are mounted on a single mounting substrate 1 at a predetermined distance. The distance between the semiconductor elements 2 is not limited, but is, for example, about 50 to 500 μm.

  In such an example, when the resin layer 4 protrudes from one semiconductor element 2, depending on the amount of protrusion, it interferes with the mounting region of the other semiconductor element 2, and the mounting of the other semiconductor element 2 is hindered. In addition, a cutting line may be drawn between adjacent mounting regions when the mounting substrate 1 is cut into individual pieces, but the resin layer 4 protrudes from the semiconductor element 2 on the cutting line. In such a case, the cutting tool cannot recognize the cutting line and may not be able to cut.

  Therefore, the above-described problem is solved by suppressing the protrusion of the resin layer 4. As a result, the distance between the semiconductor elements 2 can be shortened. Thereby, high-density mounting of the semiconductor elements 2 mounted on the mounting substrate 1 can be realized, or the number of pieces cut out from one mounting substrate 1 can be increased.

  The amount of protrusion of the resin layer 4 is, for example, preferably 80 μm or less, and more preferably 50 μm or less. According to the present invention, the probability of suppressing the amount of protrusion of the resin layer 4 within such a range can be increased.

  The first pressure described above is, for example, preferably 100 kPa or less, and more preferably 50 kPa or less. Thereby, the protrusion of resin can be suppressed.

  On the other hand, the lower limit value of the pressure for pressing the terminal 14 and the terminal 242 to each other in the first mounting process may not be set, but is preferably 1 kPa or more, and more preferably 2 kPa or more. Thereby, even if there is a repulsive force of the resin layer 4, the distance between the terminal 14 and the terminal 242 can be easily maintained, so that the metal bonding generated between the melted bump electrode 3 and the terminal 14 and the terminal 242 can be performed. Reliability can be further increased.

  In addition, the pressure difference between the pressure for pressing the terminal 14 and the terminal 242 to each other in the temporary mounting process described above and the first pressure in the present process (first mounting process) is not particularly limited, but is 20 kPa or more and 500 kPa or less. preferable. As a result, the effects described above in the provisional mounting process and the effects achieved in this process are exhibited without being buried.

  Note that the pressure applied when the terminals 14 and 242 are pressed against each other is such that the load applied when the mounting substrate 1 and the semiconductor element 2 are pressed against each other overlaps the upper surface 152 of the mounting substrate 1 and the lower surface 251 of the semiconductor element 2. It is obtained by dividing by the area of the portion (the area of the common portion).

[Second mounting process]
[4] Next, the mounting substrate 1 and the semiconductor element 2 are pressed against each other at a temperature lower than the melting point of the bump electrode 3 (second mounting step). Thereby, the melted bump electrode 3 is solidified again between the terminal 14 of the mounting substrate 1 and the terminal 242 of the semiconductor element 2, and the terminal 14 and the terminal 242 are electrically and mechanically connected.

  During such a cooling step, the first circuit member and the second circuit member are pressed against each other with a high second pressure, that is, a second pressure higher than the first pressure, so that the bump electrode 3 and the terminal (terminal 14, terminal 242) are pressed. ) Can be prevented from entering the resin, and the connection reliability can be improved. Although the detailed mechanism is not clear, when cooling from a temperature higher than the melting point of the bump electrode 3 to a lower temperature, the bump electrode 3 and the terminal are pressed at a high pressure so that the resin is placed in the gap caused by the volume shrinkage of the bump electrode 3. It is thought that it can suppress entering.

  The heating temperature (second temperature) in the second mounting step may be lower than the melting point of the bump electrode 3, but is preferably Tm-20 ° C or lower, more preferably Tm-70 ° C or lower. As a result, the melted bump electrode 3 can be sufficiently cooled and solidified, so that excessive deformation of the bump electrode 3 can be suppressed even if a relatively high pressure is applied to the bump electrode 3 in the second mounting step. It is possible to suppress the occurrence of height variation between the bump electrodes 3. Moreover, the displacement amount accompanying the curvature of the mounting substrate 1 or the semiconductor element 2 can be suppressed small, and for example, the conductivity of each terminal pair can be made uniform.

  On the other hand, the lower limit value of the heating temperature in the second mounting step is not particularly limited, but is preferably Tm-230 ° C or higher, and more preferably Tm-200 ° C or higher. As a result, the temperature difference between the heating temperature in the first mounting step and the heating temperature in the present step (second implementation step) is prevented from becoming too large. It can suppress that the solidification state of the electrode 3 changes greatly. As a result, the semiconductor element 2 can be prevented from tilting or warping.

  Further, the temperature difference between the heating temperature (first temperature) in the first mounting step and the heating temperature (second temperature) in the second mounting step is not particularly limited, but is preferably 80 ° C. or higher, and 150 It is more preferable that the temperature is not lower than 250 ° C and not higher than 250 ° C. Thereby, a temperature difference is optimized and it can suppress that the solidification state of the bump electrode 3 changes greatly for every terminal pair.

  Furthermore, it is preferable that the time for applying the second pressure while heating in the second mounting step is not less than 1 second and not more than 30 seconds. Thereby, the time for the molten bump electrode 3 to solidify sufficiently is secured. As a result, the fluidity of the bump electrode 3 can be sufficiently lowered, and the terminal 14 and the terminal 242 can be fixed by the bump electrode 3. In addition, the fluidity of the resin layer 4 is also sufficiently lowered, and the space between the upper surface 152 of the mounting substrate 1 and the lower surface 251 of the semiconductor element 2 can be fixed by the resin layer 4. Moreover, sufficient time is secured between the bump electrode 3 and the terminal 14 and between the bump electrode 3 and the terminal 242 for forming an alloy useful for increasing the bonding force.

  The heating of the bump electrode 3 may be performed by heat conduction through a jig (for example, a flip chip bonder stage or head) for pressing the mounting substrate 1 and the semiconductor element 2 together. You may carry out by heating the atmosphere which arrange | positions the semiconductor element 2. FIG.

  The second mounting step may include a step of increasing the pressure while lowering the temperature. For example, in the second mounting step, the temperature may be lowered from the first temperature higher than the melting point of the bump electrode 3 and at the same time the pressure may be raised from the first pressure. Accordingly, it is possible to suppress the resin from entering between the bump electrode 3 and the terminal while suppressing the protrusion of the resin.

Further, the second mounting step may include a step of increasing the pressure after the temperature is lowered to the melting point of the bump electrode 3. That is, you may have the process which begins to make pressure higher than 1st pressure. For example, in the second mounting step, the temperature may be lowered from the first temperature higher than the melting point of the bump electrode 3 and the pressure may be raised from the first pressure after the temperature reaches the second temperature. Thereby, it is possible to suppress the resin from entering between the bump electrode 3 and the terminal while further suppressing the protrusion of the resin.
Here, the second pressure means a pressure in a second temperature region lower than the melting point of the bump electrode 3.

In the second mounting step, the lower limit value of the second pressure in a unit area of 10 mm × 10 mm is, for example, 10N or more, preferably 20N or more, and more preferably 30N or more. Thereby, it can suppress that resin enters between bump electrode 3 and a terminal (terminal 14, terminal 242), and can improve connection reliability of these. Moreover, although the upper limit of the said 2nd pressure is not specifically limited, For example, it is 200 N or less, Preferably it is 100 N or less, More preferably, it is 80 N or less. Thereby, the junction structure of the bump electrode 3 and the terminal (terminal 14, terminal 242) can be maintained, and the connection reliability of these can be maintained.
In the second mounting step, the maximum value of the second pressure in a unit area of 10 mm × 10 mm is, for example, 10N or more, preferably 20N or more, and more preferably 30N or more.

  Further, in the second mounting step, when the terminal 14 of the mounting substrate 1 and the terminal 242 of the semiconductor element 2 are pressed against each other, for example, the pressing may be performed with a pressure (second pressure) of 100 kPa or more. Thereby, the reliability of the metal joint which arises between the bump electrode 3, the terminal 14, and the terminal 242 can be improved more.

  In the present embodiment, the bump electrode 3 is melted in the first mounting process, and the volume contraction of the bump electrode 3 occurs when the bump electrode 3 is solidified in the subsequent second mounting process. At this time, the resin layer 4 previously removed may reenter between the terminal 14 and the terminal 242 so as to compensate for the volume shrinkage, which may cause so-called resin biting. Therefore, by setting the second pressure within the above range in the second mounting step, it is possible to prevent the resin layer 4 from entering between the terminals 14 and 242 as the volume of the melted bump electrode 3 shrinks. can do.

  In addition, when the pressure which mutually presses the terminal 14 and the terminal 242 in the second mounting step is equal to or higher than the lower limit value, for example, between the bump electrode 3 and the terminal 14 or between the bump electrode 3 and the terminal 242. It is possible to suppress the release of joining.

  Further, the second pressure is, for example, preferably 100 kPa or more, and more preferably 200 kPa or more.

  On the other hand, the upper limit value of the pressure for pressing the terminal 14 and the terminal 242 to each other in the second mounting step may not be set, but is preferably 1000 kPa or less, and more preferably 800 kPa or less. Thereby, it is possible to prevent the pressure from becoming too high, and to prevent the bump electrode 3 from being crushed, the resin layer 4 from protruding, or the mounting substrate 1 or the semiconductor element 2 from being damaged.

  Further, the pressure difference between the first pressure in the first mounting step and the second pressure in the present step (second mounting step) is not particularly limited, but is preferably 50 kPa or more and 500 kPa or less. Thereby, the effect demonstrated in the 1st mounting process and the effect shown in the 2nd mounting process are exhibited, without being buried, respectively.

  Note that the pressure applied when the terminals 14 and 242 are pressed against each other is such that the load applied when the mounting substrate 1 and the semiconductor element 2 are pressed against each other overlaps the upper surface 152 of the mounting substrate 1 and the lower surface 251 of the semiconductor element 2. It is obtained by dividing by the area of the portion (the area of the common portion).

  Further, the second mounting process can include a cooling process for gradually lowering the temperature. In such a cooling step, the cooling rate for lowering the temperature may be, for example, 10 ° C./second or more, preferably 20 ° C./second or more, and more preferably 30 ° C./second or more. Thereby, productivity of the manufacturing method of an electronic device can be improved. Although an upper limit is not specifically limited, For example, it is good also as 200 degrees C / sec or less.

Further, in the second mounting step, the positional displacement between the mounting substrate 1 and the semiconductor element 2 can be suppressed by gradually increasing the load.
In the second mounting step, after the second pressure reaches a predetermined value, the cooling step may be continued while keeping the second pressure constant. Thereby, the dispersion | variation in the distance of the mounting substrate 1 and the semiconductor element 2 can be suppressed, and the structure excellent in connection reliability can be implement | achieved.

  Here, the manufacturing method of the electronic device according to the present embodiment is provided on the first surface, the first circuit member including the first terminal provided on the first surface side, the second surface, and the second surface side. A second circuit member, a bump electrode 3 provided on at least one of the first terminal and the second terminal, and a flux function provided on at least one of the first surface and the second surface. The preparatory process for preparing the resin layer 4 and the first terminal and the second terminal through the bump electrode 3 and the resin layer 4 while heating the bump electrode 3 to a first temperature higher than its melting point are 30 kPa. A first mounting step of pressing the first terminal and the second terminal with each other at a second pressure of 50 kPa or more at a second temperature lower than the melting point of the bump electrode 3; , Including. Thereby, the electrical connection with high reliability is realizable between circuit members, suppressing the protrusion of the resin layer 4. FIG.

  The electronic device manufacturing method of the present embodiment is provided before the first mounting step, and the bump electrode 3 is heated to a temporary mounting temperature lower than its melting point while the bump electrode 3 and the resin layer 4 are interposed. You may further have the temporary mounting process which presses a 1st terminal and a 2nd terminal mutually with the temporary mounting pressure higher than the said 1st pressure. Thereby, the resin layer 4 can be prevented from entering between the bump electrode 3 and the first terminal or the second terminal, and a highly reliable electrical connection can be realized between the circuit members.

[Resin curing process]
[5] Next, the resin layer 4 is heated at a temperature lower than the melting point of the bump electrode 3. Thereby, the resin layer 4 is cured without significantly affecting the bump electrode 3 (resin curing step). As a result, the mounting substrate 1 and the semiconductor element 2 can be bonded with sufficient strength via the resin layer 4, and heat resistance reliability can be improved.

  The electronic device manufacturing method of the present embodiment includes a resin curing step of curing the resin layer 4 after the second mounting step, and the resin curing step is performed at a curing temperature lower than the melting point of the bump electrode 3. Is preferred. Thereby, the curvature of the mounting board | substrate 1 and the semiconductor element 2 can fully be suppressed, and the structure which has high connection reliability is realizable.

  The heating temperature in the resin curing step may be lower than the melting point of the bump electrode 3, but is preferably Tm-5 ° C or lower, and more preferably Tm-10 ° C or lower. Thereby, since the bump electrode 3 is not melted, it is possible to avoid the bump electrode 3 from being largely crushed even when this step is performed under pressure. Moreover, the displacement amount accompanying the curvature of the mounting substrate 1 or the semiconductor element 2 can be suppressed small, and for example, the conductivity of each terminal pair can be made uniform.

  In addition, it is preferable that the specific heating temperature in a resin hardening process is 300 degrees C or less as an example, It is more preferable that it is 250 degrees C or less, It is further more preferable that it is 200 degrees C or less.

  On the other hand, the lower limit value of the heating temperature in the resin curing step is appropriately set according to the curing temperature of the resin layer 4, but as an example, it is preferably 70 ° C or higher, more preferably 100 ° C or higher, 150 More preferably, the temperature is higher than or equal to ° C.

  In addition, the heating time in the resin curing step is not particularly limited, but is preferably 30 minutes or longer and 10 hours or shorter, and more preferably 1 hour or longer and 5 hours or shorter.

  The heating in the resin curing step may be performed, for example, by heating the atmosphere in which the object to be heated is arranged. When the object to be heated is pressed while being heated, an arbitrary jig is used. The heat conduction may be performed.

  The resin curing step is preferably performed under pressure, but may be performed under no pressure. In the latter case, for example, pressure due to the weight of the semiconductor element 2 is applied between the terminal 14 and the terminal 242.

  On the other hand, in the former case, the pressure applied between the terminal 14 and the terminal 242 is not particularly limited, but is preferably 0.1 MPa or more and 10 MPa or less, and more preferably 0.3 MPa or more and 5 MPa or less.

  Thereby, the void | hole (void) remaining in the resin layer 4 can be reduced or eliminated. As a result, the reliability of the electronic device can be further increased.

  In addition, when performing this process under pressure, what is necessary is just to heat an to-be-heated object in the pressurized container.

  Further, this step may be performed as necessary, and may be omitted, for example, when the resin layer 4 has been cured at the end of the second mounting step.

  As described above, a stacked body (electronic device) obtained by stacking the semiconductor elements 2 on the mounting substrate 1 is obtained.

Thereafter, if necessary, the semiconductor element 2 may be sealed with a sealing material.
Moreover, after that, the mounting substrate 1 may be cut and separated into pieces as necessary.

  Further, another semiconductor element 2 may be stacked on the semiconductor element 2 mounted on the mounting substrate 1 as described above, as necessary. Thereby, a laminated body in which a plurality of semiconductor elements 2 are laminated is obtained.

FIG. 4 is a diagram illustrating an example in which two semiconductor elements 2 are stacked on the mounting substrate 1.
In the example shown in FIG. 4, another semiconductor element 2 is stacked on the semiconductor element 2 shown in FIG. 2. The two semiconductor elements 2 may have different configurations, but in this example, they have the same configuration. Further, the terminal 243 of the lower semiconductor element 2 and the terminal 242 of the upper semiconductor element 2 are electrically connected via the bump electrode 3. Further, the upper surface 252 of the lower semiconductor element 2 and the lower surface 251 of the upper semiconductor element 2 are bonded via the resin layer 4.

  By stacking the plurality of semiconductor elements 2 in this way, the semiconductor elements 2 can be mounted three-dimensionally. Thereby, a semiconductor device that is small in size and high in density is realized. In addition, since the wiring length between the semiconductor elements 2 can be shortened, the power consumption and performance of the semiconductor device can be reduced.

  In such an example, when the upper semiconductor element 2 is stacked on the lower semiconductor element 2, the temporary mounting process, the first implementation process, and the second mounting process described above may be sequentially performed. Thereby, even when a plurality of semiconductor elements 2 are stacked, highly reliable electrical connection can be achieved while suppressing the protrusion of the resin layer 4.

On the other hand, when two (plural) semiconductor elements 2 are stacked as shown in FIG. 4, first, the two semiconductor elements 2 are temporarily mounted on the mounting substrate 1 by the above-described temporary mounting process, and then temporarily mounted 2. The first mounting process and the second mounting process may be sequentially performed on one semiconductor element 2 at a time. Even with this method, the same effect as described above can be obtained. At the same time, the number of steps can be reduced by collectively performing the first mounting step and the second mounting step. Thereby, the manufacturing process of the semiconductor device can be simplified.
The number of stacked semiconductor elements 2 is not particularly limited, but is about 2 to 50.

In the method for manufacturing an electronic device according to the present embodiment, a plurality of circuit members (semiconductor chips, interposers, etc.) can be stacked.
In the present embodiment, an example in which, for example, a semiconductor chip having a TSV structure is used as the plurality of circuit members will be described.

  In the preparation step, a second circuit member and a third circuit member are prepared as semiconductor chips having TSV. That is, the preparation step may include a step of preparing a third circuit member (upper layer semiconductor element 2) further including a third terminal having a bump electrode formed on the surface.

  Then, after laminating the second circuit member on the first circuit member, the third circuit member is laminated on the second circuit member. Here, although a semiconductor chip may be used as the first circuit member, a semiconductor wafer such as a silicon wafer, an interposer, or an organic substrate is used from the viewpoint of arranging a plurality of second circuit members on a plane. May be. The bonding process in the electronic device manufacturing method of the present embodiment can be applied to the formation of CoC (Chip on Chip) or CoW (Chip On Wafer).

  The step of laminating the third circuit member in the present embodiment includes preparing a third circuit member further including a third terminal having a bump electrode formed on the surface, and a side of the third circuit member on which the bump electrode is formed. The second circuit member is disposed opposite to the second surface side, and a resin layer having a flux function is disposed between the third circuit member and the second circuit member. And a step of laminating the third circuit member on the second circuit member at a lower temperature.

  The step of laminating the third circuit member may be performed after the temporary mounting step, the first mounting step, and the second mounting step are performed on the first circuit member and the second circuit member ( Each stage mounting method) may be performed after the temporary mounting process and before the temperature is raised to a temperature higher than the melting point of the bump electrode 3 in the first mounting process (batch mounting method).

  In each stage mounting method, by repeating the temporary mounting process, the first mounting process, and the second mounting process described above, the upper circuit member can be bonded after the lower circuit member is bonded. Thereby, the position shift of a circuit member can be suppressed. In the temporary mounting process at this time, before the temperature is raised to a temperature higher than the melting point of the bump electrode 3, the temporary mounting pressure that presses the lower circuit member and the upper circuit member together through the resin layer 4. After raising, the pressing step of lowering the temporary mounting pressure again can be included. Thereby, it can suppress that the resin layer 4 between the bump electrode 3 and a terminal enters. Thereafter, the resin curing step can be performed.

  On the other hand, in the batch mounting method, after the provisional mounting process is performed on the first circuit member and the second circuit member, before the temperature is raised to a temperature higher than the melting point of the bump electrode 3, A temporary mounting process is performed on the three circuit members. As described above, the upper circuit member can be stacked on the lower circuit member by repeating the provisional mounting process before the first mounting process. After the plurality of stages of circuit members are stacked, the first mounting process and the second mounting process can be performed collectively. Thereby, process productivity can be improved. Thereafter, the resin curing step can be performed.

  Further, in the temporary mounting process of the batch mounting method, the above pressing process may be performed before the first temperature in the first mounting process is raised to a temperature higher than the melting point of the bump electrode 3. You don't have to. By performing the pressing step of the temporary mounting step, it is possible to suppress the resin layer 4 between the bump electrode 3 and the terminal from entering, and to improve connection reliability. On the other hand, process productivity can be further improved by not performing the pressing process of a temporary mounting process.

Next, each stage mounting method will be described with reference to FIG.
As shown in FIG. 8, the semiconductor element 2 a is stacked on the stage 100. Although the temperature of the stage 100 is not specifically limited, For example, 60 degreeC-120 degreeC may be sufficient, and it is good also as 80 degreeC-100 degreeC. Subsequently, the second-stage semiconductor element 2b is laminated on the first-stage semiconductor element 2a through a resin layer (resin film) using the head 120 of the flip chip bonder. At this time, the temporary mounting step, the first mounting step, and the second mounting step can be performed (FIG. 8A). As a result, the second-stage semiconductor element 2b can be stacked and bonded on the first-stage semiconductor element 2a. Subsequently, the third-stage semiconductor element 2c is laminated on the second-stage semiconductor element 2b by performing the temporary mounting process, the first mounting process, and the second mounting process in the same manner. And joining can be performed (FIG.8 (b)). By repeating such a process, a plurality of stages of semiconductor chips can be stacked and bonded at each stage. For example, as shown in FIG. 8C, the structure 10 in which the semiconductor elements 2a, 2b, 2c, 2d, 2e, 2f, 2g, and 2h are stacked and joined is obtained.

In each of the above-described stage mounting methods, the resin between the bump electrode and the terminal is prevented from entering by repeating the lamination bonding process including the temporary mounting process, the first mounting process, and the second mounting process. Can do. This improves connection reliability even in a multilayer structure.
Here, instead of the semiconductor element 2a, a semiconductor wafer 5 may be used as shown in FIG.

Next, the collective mounting method will be described with reference to FIG.
As shown in FIG. 9, a semiconductor wafer 5 (for example, a silicon wafer) is placed on the stage 100. These may be bonded by an adhesive layer (not shown). Subsequently, the provisional mounting process is performed on the semiconductor wafer 5 and the first-stage semiconductor element 2a. Subsequently, the second-stage semiconductor element 2b is laminated on the first-stage semiconductor element 2a via a resin layer (resin film). By repeating such a process consisting of stacking and provisional mounting steps a plurality of times, a plurality of stages of semiconductor elements 2a, 2b, 2c, 2d, 2e, 2f, and 2g can be stacked on the semiconductor wafer 5 (FIG. 9 (a) and FIG. 9 (b)). After stacking a plurality of stages of semiconductor elements, the head 120 is used for the semiconductor wafer 5 and the plurality of stages of semiconductor elements 2a, 2b, 2c, 2d, 2e, 2f, and 2g. 2 The mounting process can be performed all at once. Thereby, productivity can be improved compared with each said stage mounting method at the point which can join a some circuit member collectively. According to the collective mounting method, the structure 10b in which the semiconductor elements 2a, 2b, 2c, 2d, 2e, 2f, and 2g are stacked and bonded can be obtained.
Moreover, even if it is a case where it is a multilayer structure, the structure excellent in connection reliability is realizable. Further, as shown in FIG. 9B, a plurality of structures 10 a and 10 b may be bonded on the plane of the semiconductor wafer 5.
Further, as shown in FIG. 9C, by using a head 120 capable of pressing a plurality of semiconductor elements, a plurality of structures 10a and 10b can be formed in a lump.

  Further, in the collective mounting method, when the uppermost circuit member (semiconductor chip 2g) is stacked, the provisional mounting process can be omitted. Thereby, productivity can be further improved.

<First Modification>
FIG. 5 is a cross-sectional view for explaining a first modification of the method for manufacturing an electronic device according to the embodiment.

  The modification shown in FIG. 5 is different in that the bump electrode 3 is provided on the terminal 14 of the mounting substrate 1 and is not provided on the terminal 242 of the semiconductor element 2.

  Even if the position where the bump electrode 3 is provided is changed in this way, the same effect as described above, that is, reliability between the mounting substrate 1 and the semiconductor element 2 is suppressed while suppressing the protrusion of the resin layer 4. High electrical connection can be achieved.

<Second Modification>
FIG. 6 is a cross-sectional view for explaining a second modification of the method for manufacturing an electronic device according to the embodiment.

  The modification shown in FIG. 6 is different in that the bump electrode 3 is provided on both the terminal 242 of the semiconductor element 2 and the terminal 14 of the mounting substrate 1.

  Even if the position where the bump electrode 3 is provided is changed in this way, the same effect as described above, that is, reliability between the mounting substrate 1 and the semiconductor element 2 is suppressed while suppressing the protrusion of the resin layer 4. High electrical connection can be achieved.

<Third Modification>
FIG. 7 is a cross-sectional view for explaining a third modification of the method for manufacturing an electronic device according to the embodiment.

  The modification shown in FIG. 7 is different from that shown in FIG. 1 except that the semiconductor element 2 is used in place of the mounting substrate 1, that is, the semiconductor elements 2 are stacked and the semiconductor elements 2 are turned upside down. It is the same as that of the manufacturing method of the electronic device shown to -4. In other words, in the present modification, when two semiconductor elements 2 are stacked, the element surface of the upper semiconductor element 2 (the surface on the side where the wiring layer 22 is provided with respect to the semiconductor chip 21) is lower. They are stacked face down so as to face the semiconductor element 2 side.

  Specifically, in the semiconductor element 2 according to this modification, the protective film 23, the wiring layer 22, and the semiconductor chip 21 are stacked in this order from the bottom of FIG. In addition, the semiconductor element 2 according to this modification includes a through electrode 241 that penetrates the semiconductor chip 21 in the thickness direction, and a terminal 243 that is provided at the lower end of the through electrode 241 and projects downward from the lower surface of the semiconductor chip 21. And a terminal 242 provided at the upper end of the through electrode 241 and protruding upward from the upper surface of the semiconductor chip 21.

  Here, in this modification, the bump electrode 3 is provided on the terminal 243 of the semiconductor element 2.

  Even when the stacking surface (mounting surface) of the semiconductor elements 2 is changed in this way, the same effect as described above, that is, while the protrusion of the resin layer 4 is suppressed, between the semiconductor elements 2 (between circuit members) A reliable electrical connection can be achieved.

  Moreover, the manufacturing method of the electronic device of this embodiment is applicable to the joining process of various circuit members.

As the first circuit member, for example, a first semiconductor chip, a semiconductor wafer (silicon wafer), an interposer, or an organic substrate can be used.
On the other hand, as the second circuit member, a second semiconductor chip or an interposer can be used. The interposer is made of silicon or glass.

  According to the present embodiment, the bonding process in the method for manufacturing an electronic device includes a second semiconductor chip having a TSV structure and a semiconductor wafer, a first semiconductor chip (a semiconductor chip having a TSV structure, or a semiconductor chip not having a TSV structure). And a second semiconductor chip having a TSV structure, a laminate including a plurality of semiconductor chips having a TSV structure, a semiconductor wafer, a logic chip having a TSV structure, an organic substrate, an interposer, an organic substrate, and the like. It can be used for the process. The bonding process can suppress warping of a thin substrate or a semiconductor chip, and can realize a structure of a semiconductor device (electronic device) having excellent connection reliability.

  As mentioned above, although this invention was demonstrated based on suitable embodiment, this invention is not limited to these.

  For example, in the method for manufacturing an electronic device, an arbitrary process may be added to the embodiment.

Hereinafter, examples of the reference form will be added.
1. A first circuit member comprising: a first surface; and a first terminal provided on the first surface side;
A second circuit member comprising: a second surface; and a second terminal provided on the second surface side;
A connecting metal provided on at least one of the first terminal and the second terminal;
A resin layer provided on at least one of the first surface and the second surface and having a flux function;
A preparation process to prepare,
A first pressing the first terminal and the second terminal to each other with a first pressure of 30 kPa or less through the connection metal and the resin layer while heating the connection metal to a temperature higher than its melting point. Mounting process;
A second mounting step of pressing the first terminal and the second terminal together with a second pressure of 50 kPa or more at a temperature lower than the melting point of the connecting metal;
A circuit member connection method comprising:
2. The first terminal and the second terminal are provided via the connection metal and the resin layer while heating the connection metal to a temperature lower than its melting point, provided before the first mounting step. 1. It further has a temporary mounting step of pressing each other with a pressure higher than the first pressure. The connection method of the circuit member as described in any one of Claims 1-3.
3. The time for applying the first pressure in the first mounting step is 1 to 10 seconds. Or 2. The connection method of the circuit member as described in any one of Claims 1-3.
4). The time for applying the second pressure in the second mounting step is 1 to 30 seconds. Or 3. The connection method of the circuit member as described in any one of these.
5. 1. A resin curing step that is provided after the second mounting step and that cures the resin layer by heating the resin layer at a temperature lower than the melting point of the connecting metal. Or 4. The connection method of the circuit member as described in any one of these.
6). The connecting metal has Sn as a main component and Ag as a subcomponent. Or 5. The connection method of the circuit member as described in any one of these.
7). At least one of the first circuit member and the second circuit member is a semiconductor component. Or 6. The connection method of the circuit member as described in any one of these.
In addition, examples of reference forms will be added below.
1. A bump electrode is formed on at least one of the first terminal and the second terminal,
A first circuit member comprising the first terminal on the first surface side;
A second circuit member comprising the second terminal on the second surface side;
A preparation process to prepare,
An arrangement step of arranging a resin layer having a flux function on at least one of the first surface and the second surface;
A temporary mounting step of bringing the bump electrode into contact with the first terminal or the second terminal at a temporary mounting temperature lower than the melting point of the bump electrode;
After the temporary mounting step, a first mounting step of pressing the first circuit member and the second circuit member together at a first temperature higher than the melting point of the bump electrode with a predetermined first pressure;
After the first mounting step, at a second temperature lower than the melting point of the bump electrode, the first circuit member and the second circuit member are pressed against each other with a second pressure higher than the first pressure. A method for manufacturing an electronic device, comprising a mounting step.
2. 1. A method of manufacturing the electronic device according to claim 1,
The first pressure is 0.1 N or more and 50 N or less;
The second pressure is 10N or more and 200N or less;
1 <second pressure / first pressure ≦ 1000 satisfying the electronic device manufacturing method.
3. 1. Or 2. A method of manufacturing the electronic device according to claim 1,
The method of manufacturing an electronic device, wherein the second mounting step includes a step of increasing the pressure while lowering the temperature.
4). 1. To 3. A method of manufacturing an electronic device according to any one of
The second mounting step is a method of manufacturing an electronic device, including a step of starting to raise the pressure higher than the first pressure after the temperature is lowered to the melting point of the bump electrode.
5. 1. To 4. A method of manufacturing an electronic device according to any one of
In the temporary mounting step, after raising the first temperature to a temperature higher than the melting point of the bump electrode, after increasing the temporary mounting pressure for pressing the first circuit member and the second circuit member together, The manufacturing method of an electronic device including the process of reducing the said temporary mounting pressure again.
6). 1. To 5. A method of manufacturing an electronic device according to any one of
The method for manufacturing an electronic device, wherein the maximum value of the second pressure in the second mounting step is 10N or more.
7). 1. To 6. A method of manufacturing an electronic device according to any one of
The method for manufacturing an electronic device, wherein a minimum value of the first pressure in the first mounting step is 50 N or less.
8). 1. To 7. A method of manufacturing an electronic device according to any one of
The second mounting step includes a cooling step of gradually lowering the temperature,
The method for manufacturing an electronic device, wherein in the cooling step, a cooling rate for decreasing the temperature is 10 ° C./second or more.
9. 1. To 8. A method of manufacturing an electronic device according to any one of
The method of manufacturing an electronic device, wherein the second circuit member includes a through electrode having the second terminal on the second surface side.
10. 9. A method of manufacturing the electronic device according to claim 1,
A third circuit member further comprising a third terminal having a bump electrode formed on the surface is prepared, and the side of the third circuit member on which the bump electrode is formed is opposite to the second surface side of the second circuit member. And a resin layer having a flux function between the third circuit member and the second circuit member, and at a temperature lower than the melting point of the bump electrode, the third circuit member And stacking the second circuit member on the second circuit member.
11. 1. To 10. A method of manufacturing an electronic device according to any one of
The method for manufacturing an electronic device, wherein the second circuit member is a second semiconductor chip or an interposer.
12 1. To 11. A method of manufacturing an electronic device according to any one of
The method of manufacturing an electronic device, wherein the first circuit member is a first semiconductor chip, a semiconductor wafer, an interposer, or an organic substrate.
13. 1. To 12. A method of manufacturing an electronic device according to any one of
The method for manufacturing an electronic device, wherein the resin layer includes a thermosetting resin.
14 13. A method of manufacturing the electronic device according to claim 1,
The said thermosetting resin is a manufacturing method of an electronic device containing a tris (hydroxyphenyl) methane type epoxy resin.
15. 1. To 14. A method of manufacturing an electronic device according to any one of
The method for manufacturing an electronic device, wherein the resin layer includes an inorganic filler.
16. 1. To 15. A method of manufacturing an electronic device according to any one of
The method for manufacturing an electronic device, wherein the bump electrode is a solder bump.
17. 1. To 16. A method of manufacturing an electronic device according to any one of
After the second mounting step, including a resin curing step of curing the resin layer,
The method of manufacturing an electronic device, wherein the resin curing step is performed at a curing temperature lower than the melting point of the bump electrode.
18. 1. To 17. A method of manufacturing an electronic device according to any one of
The method for manufacturing an electronic device, wherein the time for applying the second pressure in the second mounting step is not less than 1 second and not more than 30 seconds.
19. A first circuit member comprising: a first surface; and a first terminal provided on the first surface side;
A second circuit member comprising: a second surface; and a second terminal provided on the second surface side;
A bump electrode provided on at least one of the first terminal and the second terminal;
A resin layer provided on at least one of the first surface and the second surface and having a flux function;
A preparation process to prepare,
The first terminal and the second terminal are pressed against each other at a first pressure of 30 kPa or less through the bump electrode and the resin layer while heating the bump electrode to a first temperature higher than its melting point. Mounting process;
A second mounting step of pressing the first terminal and the second terminal against each other with a second pressure of 50 kPa or more at a second temperature lower than the melting point of the bump electrode;
A method for manufacturing an electronic device, comprising:
20. 19. A method of manufacturing the electronic device according to claim 1,
The first terminal and the second terminal are provided through the bump electrode and the resin layer while heating the bump electrode to a temporary mounting temperature lower than its melting point, which is provided before the first mounting step. The manufacturing method of an electronic device further comprising a temporary mounting step of pressing each other with a temporary mounting pressure higher than the first pressure.

[Example A]
Hereinafter, specific examples of the present invention will be described.
1. Preparation of sample for evaluation (Sample 1 for evaluation)
[1] Preparation of resin layer <Preparation of resin varnish 1>
First, sample No. shown in Table 1 was used. 1 component was mixed at a mass ratio shown in Table 1, and dissolved and dispersed in methyl ethyl ketone to prepare a resin varnish 1 having a component concentration of 50% by mass.

<Preparation of Resin Film 1 (Resin Layer)>
Next, the obtained resin varnish 1 was applied to a base polyester film (base film, trade name Lumirror, manufactured by Toray Industries, Inc.) so as to have a thickness of 50 μm, and dried at 100 ° C. for 5 minutes to obtain a thickness. A resin film 1 (resin layer) having a flux function of 25 μm was obtained.

[2] Preparation of Circuit Member Next, a silicon wafer on which circuit elements and wirings were formed was prepared. Note that a Cu pad is exposed on the silicon wafer, and a bump electrode made of SnAg-based lead-free solder having a melting point of 221 ° C. is provided on the pad.

  Next, the resin film prepared in [1] was attached to a silicon wafer so as to cover the bump electrodes. And the base polyester film was peeled and only the resin film 1 was transferred.

  Next, the silicon wafer to which the resin film 1 was attached was cut into individual pieces together with the resin film 1 to obtain a semiconductor element with the resin film 1. The obtained semiconductor element had a size of 10 mm × 10 mm and a thickness of 0.3 mm.

  On the other hand, a silicon mounting substrate on which Cu pads (terminals) were formed was prepared. The mounting board had a size of 6 inches and a thickness of 0.625 mm. Ni-gold plating is formed on the Cu pad.

[3] Connection between circuit members Next, a semiconductor element with the resin film 1 was picked up by a flip chip bonder and placed on a mounting substrate on a stage.

  In this process, first, the semiconductor element was pressed against the mounting substrate at 300 kPa (30 N) for 2 seconds while heating the bump electrode with a 200 ° C. flip chip bonder head (pressing member) (temporary mounting process). .

  Subsequently, the semiconductor element was pressed against the mounting substrate at 5 kPa (0.5 N) for 5 seconds while heating the bump electrode with a head at 260 ° C. (first mounting step).

  Subsequently, the semiconductor element was pressed against the mounting substrate at 300 kPa (30 N) for 7 seconds while heating the bump electrode with a head at 100 ° C. (second mounting step).

Subsequently, the semiconductor element and the mounting substrate that had undergone the second mounting step were placed in an environment pressurized to a pressure of 0.8 MPa with nitrogen gas and heated at 180 ° C. for 2 hours. Thereby, the resin film 1 was hardened (resin hardening process).
As described above, an evaluation sample 1 obtained by stacking semiconductor elements on the mounting substrate was obtained.
In the case of two layers of a mounting substrate and a semiconductor element, the temperature of the flip chip bonder head can be regarded as the temperature of the mounting substrate or the semiconductor element.

(Samples for evaluation 2-12)
Evaluation samples 2 to 12 were obtained in the same manner as in the case of the evaluation sample 1 except that the connection conditions between the circuit members were changed as shown in Table 2.

  FIG. 10 shows the temperature profile and pressure profile for the sample 2 for evaluation.

  Table 2 shows the conditions of the above evaluation samples. In Table 2, “Example”, “Comparative Example” or “Reference Example” is described for each evaluation sample.

2. 2. Evaluation of Sample for Evaluation 2.1 Evaluation of protrusion amount of resin film First, the samples for evaluation obtained in each of Examples and Comparative Examples were observed with an optical microscope. Next, the protruding length of the resin film protruding from the edge of the semiconductor element was measured. And the measured protrusion length was evaluated in light of the following evaluation criteria.

<Evaluation criteria for protruding length of resin film>
A: The protruding length of the resin film is 60 μm or less. O: The protruding length of the resin film is more than 60 μm and not more than 80 μm. Δ: The protruding length of the resin film is more than 80 μm and not more than 120 μm. X: The protruding length of the resin film Table 2 shows the evaluation results.

2.2 Evaluation of Connection Reliability Next, 20 samples for evaluation obtained in each example and each comparative example were prepared. These were then subjected to a temperature cycle test. In this temperature cycle test, an evaluation sample is exposed to −55 ° C. for 30 minutes and then exposed to 125 ° C. for 30 minutes as one cycle, and this is repeated for 100 cycles.

  Next, the sample for evaluation subjected to the temperature cycle test was cut, and the cut surface near the bump electrode was observed with an electron microscope. Subsequently, the bonding state between the bump electrode and the terminal was inspected based on the observation image and the conduction state between the terminals. And the inspection result was evaluated in light of the following evaluation criteria.

<Evaluation criteria for connection reliability>
◯: The bonding state between the bump electrode and the terminal is good with all 20 pieces. X: One or more bonding states between the bump electrode and the terminal are defective. Table 2 shows the evaluation results.

  As is apparent from Table 2, in the method for connecting circuit members in the method for manufacturing an electronic device according to the present invention, highly reliable electrical connection between the semiconductor element and the mounting substrate while suppressing the protrusion of the resin layer. It was recognized that

  On the other hand, in the comparative example, it was recognized that the resin layer protruded significantly or the connection reliability was low.

[Example B]
<Preparation of resin varnishes 2-11>
First, the components of sample Nos. 2 to 11 shown in Table 3 were mixed at a mass ratio shown in Table 3 and dissolved and dispersed in methyl ethyl ketone to prepare resin varnishes 2 to 11 having a component concentration of 50% by mass.
<Preparation of resin films 2 to 11 (resin layer)>
Next, the obtained resin varnishes 2 to 11 were applied to a base polyester film (base film, Toray Industries, trade name Lumirror) to a thickness of 50 μm, dried at 100 ° C. for 5 minutes, Resin films 2 to 11 (resin layer) having a flux function of 25 μm in thickness were obtained.

For the obtained resin films 2 to 11, a temporary mounting step (200 ° C., 30 N, 2 seconds), a first mounting step (260 ° C., 0.5 N, 5 seconds), and a second mounting step (100 ° C., 30 N), respectively. Samples for evaluation 13 to 22 were created under the same conditions as for the sample 1 for evaluation except that the conditions of 7 seconds) were used.
FIG. 11 shows the temperature profile and pressure profile at this time. The cooling rate was 23 ° C./second.
The obtained samples 13 to 22 for evaluation had a result of the protruding amount of the resin layer as ◎ and a result of connection reliability as ◯.

[Example C]
<Fabrication of semiconductor chip having TSV structure>
An 8-inch silicon wafer on which a dicing film was formed was prepared.
On the surface opposite to the surface on which the dicing film is formed, 800 copper bumps having a diameter of 25 μm and a height of 35 μm are formed, and a 10 μm-thick tin-silver solder component (melting point: 221 ° C.) is formed thereon. A configured solder layer is formed. A plurality of through electrodes (copper pillars) penetrating from the front surface to the back surface are formed on the silicon wafer. Each through electrode is connected to a copper bump. The film thickness of the silicon wafer was 80 μm.
Using a vacuum laminator (manufactured by Meiki Seisakusho Co., Ltd., model number: MVLP-500 / 600-2A) under the condition of 95 ° C./30 sec / 0.8 MPa, the above surface is applied to the 8-inch silicon wafer on the side where the copper bumps are formed A resin film was laminated.
Next, using a dicing machine (manufactured by DISCO Corporation, model number: DFD-6340), the (dicing film / silicon wafer / resin film) laminate is diced under the following conditions, and a semiconductor having a TSV structure with a size of 5 mm square. A chip (substrate film thickness: 80 μm) was obtained.
(Dicing conditions)
Dicing size: 5mm x 5mm square dicing speed: 10mm / sec
Spindle speed: 30000rpm
Maximum dicing depth: 0.09mm
Dicing blade thickness: 55 μm

<Preparation of sample for evaluation>
Separately, a silicon wafer (thickness: 150 μm) having a predetermined pattern in which a pad of φ25 μm is formed and Ni / Au plating is formed on the pad surface is prepared. The obtained semiconductor chips having the TSV structure were laminated. At this time, it arrange | positioned so that the copper bump of the said semiconductor chip might oppose through the said resin film 1 with respect to the pattern provided in the silicon wafer.
Temporary mounting process (200 ° C., 30 N, 2 seconds), first mounting process (320 ° C., 5 N, 3 seconds), second mounting process (100 ° C., 30 N, 10 seconds) for the silicon wafer and the semiconductor chip. ) Then, the resin hardening process was performed on the conditions similar to the sample 1 for evaluation, and the sample 23 for evaluation was created.
The obtained sample 23 for evaluation had a result of protruding amount of the resin layer as ◎ and a result of connection reliability as ◯. Moreover, in the sample 23 for evaluation, it replaced with the resin film 1, and the result similar to the sample 23 for evaluation was obtained also in any of the samples for evaluation obtained using the said resin films 2-11.

[Example D]
(Each stage mounting method)
In the same manner as in Example C, using the silicon wafer, the semiconductor chip having the TSV structure, and the resin film 1, a sample 24 for evaluation having a four-layer structure was produced under the following conditions.
First, a temporary mounting process (150 ° C., 30 N, 2 seconds), a first mounting process (320 ° C., 5 N, 3 seconds), and a second mounting are performed on the first-stage silicon wafer and the second-stage semiconductor chip. The process (100 ° C., 30 N, 10 seconds) was performed. Thereafter, the third-stage semiconductor chip was laminated on the second-stage semiconductor chip via the resin film 1, and the second mounting process was performed from the temporary mounting process under the same conditions. This process was repeated once to bond four layers of semiconductor chips. Then, the resin hardening process was performed on the conditions similar to the sample 1 for evaluation, and the sample 24 for evaluation was created.
The obtained sample 24 for evaluation had a result of the protrusion amount of the resin layer as 、 and a result of connection reliability as ◯. Moreover, in the evaluation samples 25 to 34, the same results as in the evaluation sample 24 were obtained in the evaluation samples 25 to 34 obtained by using the resin films 2 to 11 instead of the resin film 1. Obtained.

(Batch mounting method A)
In the same manner as in Example C, using the silicon wafer, the semiconductor chip having the TSV structure, and the resin film 1, a sample for evaluation 35 having a four-layer structure was produced under the following conditions.
First, a temporary mounting process A (150 ° C., 30 N, 2 seconds) was performed on the silicon wafer and the semiconductor chip. Thereafter, the upper semiconductor chip was laminated on the lower semiconductor chip via the resin film 1, and the temporary mounting step A was performed. Such a process consisting of stacking and temporary mounting step A was repeated once to stack three layers of semiconductor chips on the silicon wafer. After the three-layer semiconductor chips are stacked, the provisional mounting process B (200 ° C., 30 N, 2 seconds), the first mounting process (340 ° C., 5 N, 3 seconds), the second mounting process (100 ° C., 30 N, 10 seconds). Thereafter, a resin curing step was performed under the same conditions as in the evaluation sample 1 to prepare an evaluation sample 35.
In the obtained sample 35 for evaluation, the result of the protruding amount of the resin layer was ◎, and the result of the connection reliability was ◯. In addition, productivity could be improved as compared to the above-described each stage mounting method in that a plurality of circuit members can be joined together. In addition, since a temporary mounting process is performed each time the circuit members (in this example, semiconductor chips) are stacked, the resin can be prevented from entering between the terminals and the solder bumps. Even in this case, it has been found that a structure with excellent connection reliability can be realized.
On the other hand, in the evaluation samples 36 to 45, the same results as the evaluation sample 35 were obtained in the evaluation samples obtained using the resin films 2 to 11 instead of the resin film 1. .

(Batch mounting method B)
In the same manner as in Example C, using the silicon wafer, the semiconductor chip having the TSV structure, and the resin film 1, a sample 46 for evaluation having a four-layer structure was produced under the following conditions.
First, a temporary mounting process A (100 ° C., 30 N, 1 second) was performed on the silicon wafer and the first-stage semiconductor chip. Thereafter, the upper semiconductor chip was laminated on the first semiconductor chip via the resin film 1. The temporary mounting step A and the stacking step were repeated to stack three layers of semiconductor chips on the silicon wafer. After the three-layer semiconductor chips are stacked, the first mounting step (340 ° C., 5 N, 5 seconds), the second mounting step (100 ° C., 30 N, 10 seconds). Then, the resin hardening process was performed on the conditions similar to the sample 1 for evaluation, and the sample 46 for evaluation was created.
The obtained sample 46 for evaluation had a result of protruding amount of the resin layer as ◎ and a result of connection reliability as ◯. In addition, productivity could be improved as compared to the above-described each stage mounting method in that a plurality of circuit members can be joined together. Moreover, productivity can be improved compared with the collective mounting method A by omitting the provisional mounting process every time the circuit members (in this example, semiconductor chips) are stacked.
On the other hand, in the evaluation samples 47 to 56, the same results as the evaluation sample 46 were obtained in the evaluation samples obtained by using the resin films 2 to 11 instead of the resin film 1. .

  This application claims priority based on Japanese Patent Application No. 2015-100404 filed on May 15, 2015 and Japanese Application No. 2015-133395 filed on July 2, 2015. , The entire disclosure of which is incorporated herein.

Claims (18)

A bump electrode is formed on at least one of the first terminal and the second terminal,
A first circuit member comprising the first terminal on the first surface side;
A second circuit member comprising the second terminal on the second surface side;
A preparation process to prepare,
An arrangement step of arranging a resin layer having a flux function on at least one of the first surface and the second surface;
A temporary mounting step of bringing the bump electrode into contact with the first terminal or the second terminal at a temporary mounting temperature lower than the melting point of the bump electrode;
After the temporary mounting step, a first mounting step of pressing the first circuit member and the second circuit member together at a first temperature higher than the melting point of the bump electrode with a predetermined first pressure;
After the first mounting step, at a second temperature lower than the melting point of the bump electrode, the first circuit member and the second circuit member are pressed against each other with a second pressure higher than the first pressure. A mounting process,
The second mounting step is a method of manufacturing an electronic device, including a step of starting to raise the pressure higher than the first pressure after the temperature is lowered to the melting point of the bump electrode. A method of manufacturing an electronic device according to claim 1,
The first pressure is 0.1 N or more and 50 N or less;
The second pressure is 10N or more and 200N or less;
1 <second pressure / first pressure ≦ 1000 satisfying the electronic device manufacturing method. A method of manufacturing an electronic device according to claim 1 or 2 ,
The temporary mounting step, in the preliminary implementation temperatures, after raising the temporary mounting of a forcing pressure and a second circuit member and the first circuit member to each other, comprising the step of reducing the temporary mounting pressure again, electronic Device manufacturing method. It is a manufacturing method of the electronic device according to any one of claims 1 to 3 ,
The method for manufacturing an electronic device, wherein the maximum value of the second pressure in the second mounting step is 10N or more. A method for manufacturing an electronic device according to any one of claims 1 to 4 ,
The method for manufacturing an electronic device, wherein a minimum value of the first pressure in the first mounting step is 50 N or less. A method for manufacturing an electronic device according to any one of claims 1 to 5 ,
The second mounting step includes a cooling step of gradually lowering the temperature,
The method for manufacturing an electronic device, wherein in the cooling step, a cooling rate for decreasing the temperature is 10 ° C./second or more. A method of manufacturing an electronic device according to any one of claims 1 or et 6,
The method of manufacturing an electronic device, wherein the second circuit member includes a through electrode having the second terminal on the second surface side. A method for manufacturing an electronic device according to claim 7 ,
A third circuit member further comprising a third terminal having a bump electrode formed on the surface is prepared, and the side of the third circuit member on which the bump electrode is formed is opposite to the second surface side of the second circuit member. And a resin layer having a flux function between the third circuit member and the second circuit member, and at a temperature lower than the melting point of the bump electrode, the third circuit member And stacking the second circuit member on the second circuit member. A method for manufacturing an electronic device according to any one of claims 1 to 8 ,
The method for manufacturing an electronic device, wherein the second circuit member is a second semiconductor chip or an interposer. A method for manufacturing an electronic device according to any one of claims 1 to 9 ,
The method of manufacturing an electronic device, wherein the first circuit member is a first semiconductor chip, a semiconductor wafer, an interposer, or an organic substrate. It is a manufacturing method of the electronic device according to any one of claims 1 to 10 ,
The method for manufacturing an electronic device, wherein the resin layer includes a thermosetting resin. A method of manufacturing an electronic device according to claim 11 ,
The said thermosetting resin is a manufacturing method of an electronic device containing a tris (hydroxyphenyl) methane type epoxy resin. It is a manufacturing method of the electronic device according to any one of claims 1 to 12 ,
The method for manufacturing an electronic device, wherein the resin layer includes an inorganic filler. A method for manufacturing an electronic device according to any one of claims 1 to 13 ,
The method for manufacturing an electronic device, wherein the bump electrode is a solder bump. A method for manufacturing an electronic device according to any one of claims 1 to 14 ,
After the second mounting step, including a resin curing step of curing the resin layer,
The method of manufacturing an electronic device, wherein the resin curing step is performed at a curing temperature lower than the melting point of the bump electrode. A method for manufacturing an electronic device according to any one of claims 1 to 15 ,
The method for manufacturing an electronic device, wherein the time for applying the second pressure in the second mounting step is not less than 1 second and not more than 30 seconds. A first circuit member comprising: a first surface; and a first terminal provided on the first surface side;
A second circuit member comprising: a second surface; and a second terminal provided on the second surface side;
A bump electrode provided on at least one of the first terminal and the second terminal;
A resin layer provided on at least one of the first surface and the second surface and having a flux function;
A preparation process to prepare,
The first terminal and the second terminal are pressed against each other at a first pressure of 30 kPa or less through the bump electrode and the resin layer while heating the bump electrode to a first temperature higher than its melting point. Mounting process;
A second mounting step of pressing the first terminal and the second terminal against each other with a second pressure of 50 kPa or more at a second temperature lower than the melting point of the bump electrode;
Including
The second mounting step is a method of manufacturing an electronic device, including a step of starting to raise the pressure higher than the first pressure after the temperature is lowered to the melting point of the bump electrode. A method of manufacturing an electronic device according to claim 17 ,
The first terminal and the second terminal are provided through the bump electrode and the resin layer while heating the bump electrode to a temporary mounting temperature lower than its melting point, which is provided before the first mounting step. The manufacturing method of an electronic device further comprising a temporary mounting step of pressing each other with a temporary mounting pressure higher than the first pressure.

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