JP5310355B2 - Electronic component manufacturing method and electronic component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To suppress the formation of a cavity (air gap), and further suppress the formation of a void (bubble) in a method for manufacturing an electronic component for solder-joining the electronic components, filling the void at a solder joint with a resin layer containing a thermosetting resin, and reinforcing the solder joint. <P>SOLUTION: This method for manufacturing the electronic component has: a first process of forming a resin layer containing a thermosetting resin in at least one of a first electronic component or a second electronic component; a second process for bringing a solder electrode into abutment against a metal electrode; a third process of fusion-bonding the solder electrode and the metal electrode; and a fourth process of curing the resin layer containing the thermosetting resin. In the third process of the method for manufacturing the electronic components, heating is performed at a temperature of a melting point or higher of a solder while maintaining pressurization by a pressurizing device having a plate-like body, and furthermore, pressurization is released at a temperature lower than the melting point of the solder. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to an electronic component manufacturing method and an electronic component.

  In recent years, electronic devices such as semiconductor packages have been integrated with higher density and higher density in response to demands for higher functionality and lighter, thinner and smaller electronic devices. These electronic components have become smaller and more pins. It is out. In order to obtain an electrical connection between these electronic components, solder bonding is used. For example, a conductive junction between semiconductor chips, a conductive junction between a semiconductor chip and a circuit board such as a package mounted on a flip chip, and a circuit. It is used for a conductive junction between a substrate and a circuit board. Furthermore, along with the demands for thinner, smaller, and narrow pitch bonding of electronic components, the solder joints are filled with liquid sealing resin (underfill material) that utilizes capillary action to reinforce the joints and ensure the reliability of the joints. The sex is secured.

  However, as the electronic parts become thinner and smaller, the solder joints have a narrow pitch / narrow gap, so even if liquid sealing resin (underfill material) is supplied after soldering, liquid sealing is performed between the gaps. There is a problem that resin (underfill material) does not spread and it becomes difficult to completely fill the resin. In order to avoid this problem, a method of supplying a liquid or film-like sealing resin (underfill material) having a flux action in advance before soldering and filling the gap at the same time as soldering is considered. Has been. However, even if this method is used, it is difficult to completely fill the narrow pitch / narrow gap solder joints, which may cause a problem of generation of voids and cavities.

JP-A-8-332087 JP2003-100809

  In view of such circumstances, the present invention is an electronic component that reinforces a solder joint by soldering electronic components together, filling a void in the solder joint with a resin layer containing a thermosetting resin. In the manufacturing method, it is possible to provide an electronic component manufacturing method and an electronic component that can suppress the generation of cavities (air gaps) and can also suppress the generation of voids (bubbles).

Such an object is achieved by the present invention described in the following (1) to (11).
(1) A solder joining method for joining a first electronic component having a connecting metal electrode and a second electronic component having a connecting solder electrode, the solder joining of the first electronic component and the second electronic component. A first step of forming a resin layer containing a thermosetting resin on at least one of the surfaces; and after forming the resin layer containing the thermosetting resin, the metal electrode for connection of the first electronic component, The connection solder electrode of the second electronic component is aligned so as to face each other, and heated and pressed at a temperature lower than the melting point of the solder of the connection solder electrode, whereby the connection metal electrode and the connection A second step of bringing the solder electrode into contact with the solder electrode;
The first electronic component and the second electronic component brought into contact with each other are pressurized by a pressurizing device having a plate-like body, and heated at a temperature higher than the melting point of the connecting solder electrode while holding the pressurization, A third step of melting and bonding the solder of the connecting solder electrode to the connecting metal electrode, and then releasing the pressure after cooling to a temperature lower than the melting point of the solder before the melting and bonding ; and the thermosetting resin And a fourth step of curing the resin layer containing the resin layer by heating to a temperature lower than the melting point of the solder before the melt bonding , in this order,
(2) A solder joining method for joining a first electronic component having a connecting metal electrode and a second electronic component having a connecting solder electrode, the solder joining of the first electronic component and the second electronic component. A first step of forming a resin layer containing a thermosetting resin on at least one of the surfaces; and after forming the resin layer containing the thermosetting resin, the metal electrode for connection of the first electronic component, Align the solder electrodes for connection of the second electronic component so as to face each other, and heat and press at a temperature at which the thermal expansion coefficient of the solder of the solder electrodes for connection is 30 × 10 ⁻⁶ / ° C. or less. The second step of bringing the connecting metal electrode and the connecting solder electrode into contact with each other, and applying the contacted first electronic component and second electronic component with a pressurizing device having a plate-like body. In a state where the pressure is applied and the pressure is maintained, the connecting solder The thermal expansion coefficient of solder is heated to a larger temperature than 30 × 10 ^-6 / ℃, solder of the connecting solder electrodes is fusion-joined to the metal electrode for the connection, then the solder before the molten bonding A third step of releasing the pressure after cooling to a temperature of a thermal expansion coefficient of 30 × 10 ⁻⁶ / ° C. or less; and a thermal expansion coefficient of the solder before the fusion bonding of the resin layer containing the thermosetting resin. A fourth step of curing by heating to a temperature of 30 × 10 ⁻⁶ / ° C. or less in this order, and a method for producing an electronic component,
(3) A solder joining method for joining a first electronic component having a connecting metal electrode and a second electronic component having a connecting solder electrode, the solder joining of the first electronic component and the second electronic component. A first step of forming a resin layer containing a thermosetting resin on at least one of the surfaces; and after forming the resin layer containing the thermosetting resin, the metal electrode for connection of the first electronic component, The connection solder electrode of the second electronic component is aligned so as to face each other, and the connection metal electrode and the connection solder electrode are brought into contact with each other by heating and pressing at a temperature of 190 ° C. or less. In the second step, the first electronic component and the second electronic component brought into contact with each other are pressurized by a pressure device having a plate-like body, and heated to a temperature higher than 210 ° C. while the pressure is maintained. And soldering the connecting solder electrode for the connecting A third step of releasing the pressure after melting and joining to the metal electrode and then cooling to a temperature of 210 ° C. or lower, and heating the resin layer containing the thermosetting resin to a temperature of 210 ° C. or lower. A fourth step of curing, and an electronic component manufacturing method characterized by performing in this order;
(4) A solder joining method for joining a first electronic component having a connecting solder electrode and a second electronic component having a connecting solder electrode, the solder joining of the first electronic component and the second electronic component. A first step of forming a resin layer containing a thermosetting resin on at least one of the surfaces; a solder electrode for connecting the first electronic component after forming the resin layer containing the thermosetting resin; By aligning the solder electrodes for connection of the second electronic component so as to face each other, and heating and pressurizing at a temperature lower than the melting point of the solder of the solder electrodes for connection of the first electronic component and the second electronic component A second step of bringing the connecting solder electrodes of the first electronic component and the second electronic component into contact with each other, and a pressurizing device having the plate-like body between the contacted first electronic component and second electronic component In a state where the pressure is maintained Serial first heated with the electronic components and a temperature higher than the melting point of the solder of the second at least one of the solder electrodes for connection of the electronic component, solder electrodes together by melt bonding of the first electronic component and the second electronic component, then, A third step of releasing the pressure after cooling to a temperature lower than the melting point of the solder before the fusion bonding , heating the resin layer containing the thermosetting resin to a temperature lower than the melting point of the solder before the fusion bonding; And a fourth step of curing by performing the steps in this order,
(5) A solder joining method for joining a first electronic component having a connecting solder electrode and a second electronic component having a connecting solder electrode, the solder joining of the first electronic component and the second electronic component. A first step of forming a resin layer containing a thermosetting resin on at least one of the surfaces; a solder electrode for connecting the first electronic component after forming the resin layer containing the thermosetting resin; The solder electrodes for connection of the second electronic components are aligned so as to face each other, and the thermal expansion coefficient of the solder of the solder electrodes of the first electronic component and the second electronic component is 30 × 10 ⁻⁶ / ° C. or less. A second step of bringing the connecting solder electrodes of the first electronic component and the second electronic component into contact with each other by heating and pressurizing at a temperature; and the contacted first electronic component and second electronic component Pressed by a pressurizing device having a plate-like body, Thermal expansion coefficient of solder of at least one of the solder electrode of the while holding the pressure first electronic component and the second electronic component is heated at a larger temperature than 30 × 10 ^-6 / ℃, the first electronic component and A third step of melting and bonding the solder electrodes of the second electronic component, and then releasing the pressure after cooling to a temperature at which the thermal expansion coefficient of the solder before the melting and bonding is 30 × 10 ⁻⁶ / ° C. or less. And a fourth step of curing the resin layer containing the thermosetting resin by heating to a temperature at which the thermal expansion coefficient of the solder before fusion bonding is 30 × 10 ⁻⁶ / ° C. or less. A method of manufacturing an electronic component characterized by being performed in this order,
(6) A solder joining method for joining a first electronic component having a connecting solder electrode and a second electronic component having a connecting solder electrode, the solder joining of the first electronic component and the second electronic component. A first step of forming a resin layer containing a thermosetting resin on at least one of the surfaces; a solder electrode for connecting the first electronic component after forming the resin layer containing the thermosetting resin; The solder electrodes for connection of the second electronic component are aligned so as to face each other, and heated and pressed at a temperature of 190 ° C. or lower, thereby connecting the solder electrodes for connection of the first electronic component and the second electronic component to each other. The first electronic component and the second electronic component brought into contact with each other with a pressurizing device having a plate-like body, and the pressure is maintained at a temperature higher than 210 ° C. Heating at a high temperature, the first electronic component and 2 is an electronic component melt bonding solder electrodes of, then a third step of releasing the pressure after cooling to a temperature of 210 ° C. or less,
And a fourth step of curing the resin layer containing the thermosetting resin by heating to a temperature of 210 ° C. or lower in this order. The electron according to any one of (1) to (3), wherein the step 3 is to melt-bond the solder of the connecting solder electrode to the connecting metal electrode in an atmosphere pressurized by a pressurized fluid. Parts manufacturing method,
(8) In the electronic component according to any one of (4) to (6), in the third step, the connection solder electrodes are melt-bonded in an atmosphere pressurized by a pressurized fluid. (9) Any of (1) to (8), wherein the fourth step is to cure the resin layer containing the thermosetting resin in an atmosphere pressurized by a pressurized fluid. A method for manufacturing the electronic component according to claim 1,
(10) The method for producing an electronic component according to any one of (1) to (9), wherein the resin layer containing the thermosetting resin contains a flux active compound,
(11) An electronic component manufactured using the method for manufacturing an electronic component according to any one of (1) to (10).

  According to the present invention, in an electronic component manufacturing method in which electronic components are soldered to each other, a void in the solder joint is filled with an adhesive layer containing a thermosetting resin, and the solder joint is reinforced, ), And a method for manufacturing an electronic component and an electronic component that can also suppress the generation of voids (bubbles) are provided.

It is a longitudinal cross-sectional view which shows typically an example of the electronic component manufactured by the soldering method of this invention. It is a longitudinal cross-sectional view for demonstrating the solder joint of this invention. It is a longitudinal cross-sectional view which shows typically the 1st joining method which joins a semiconductor chip and an interposer. It is a longitudinal cross-sectional view which shows typically the 2nd joining method which joins a semiconductor chip and an interposer.

The electronic component joining method and electronic component of the present invention will be described in detail below.
The electronic component bonding method of the present invention is a solder bonding method for bonding a first electronic component having a connecting metal electrode and a second electronic component having a connecting solder electrode, the first electronic component and A first step of forming a resin layer containing a thermosetting resin on at least one of the solder joint surfaces of the second electronic component; and after forming the resin layer containing the thermosetting resin, The connection metal electrode and the connection solder electrode of the second electronic component are aligned so as to face each other, and heated and pressed at a temperature lower than the melting point of the solder of the connection solder electrode, thereby the connection A second step of bringing the metal electrode for contact with the solder electrode for connection into contact, and pressurizing the contacted first electronic component and second electronic component with a pressurizing device having a plate-like body. Of the solder electrode for connection while maintaining the pressure. Was heated at higher than the point temperature, said solder connecting solder electrodes is fusion-joined to the metal electrode for the connection, then, a third for opening the pressure after cooling to a temperature lower than the melting point of the solder before the molten bonding And the fourth step of curing the resin layer containing the thermosetting resin by heating to a temperature lower than the melting point of the solder before the fusion bonding is performed in this order. In particular, pressurization and heating with a pressurizing device having a plate-like body causes the solder of the solder electrode and the metal of the metal electrode to be melt-bonded, and further, the pressure is released after cooling to a temperature lower than the melting point of the solder. Therefore, the generation of cavities (air gaps) and voids (bubbles) can also be suppressed.

First, prior to describing the method for joining electronic components of the present invention, an electronic component manufactured by the method for manufacturing an electronic component of the present invention will be described.

  FIG. 1 is a longitudinal sectional view showing an example of an electronic component manufactured by the electronic component bonding method of the present invention. In the following description, the upper side in the figure is referred to as “upper” and the lower side is referred to as “lower”.

  An electronic component 10 shown in FIG. 1 is a flip-chip package, and includes a semiconductor chip 3, an interposer (substrate) 1 that supports the semiconductor chip 3, a metal electrode 2 formed in a predetermined pattern, and a plurality of conductive layers. A solder electrode (solder bump) 4 having heat resistance and a resin layer 5 containing a thermosetting resin.

The interposer 1 is an insulating substrate and is made of various resin materials such as polyimide, epoxy, cyanate, bismaleimide triazine (BT resin). The plan view shape of the interposer 1 is usually a square such as a square or a rectangle.
On the upper surface (one surface) of the interposer 1, for example, a metal electrode 2 formed in a predetermined pattern made of a conductive metal material such as copper is provided. Further, for the purpose of preventing oxidation of the metal electrode 2 and improving the bondability with the solder electrode, a metal such as Ag, Sn, Au or the like may be configured to cover the metal electrode 2 by a technique such as plating or vapor deposition. .
The interposer 1 may be formed with a plurality of vias (through holes: through holes) (not shown) penetrating in the thickness direction.

The shape of each solder electrode 4 is not particularly limited, and examples thereof include a spherical shape, an elliptical shape, a cylindrical shape, and a conical shape.
The solder electrode 4 is not particularly limited, but is preferably an alloy of a metal selected from Sn, Ag, Bi, Zn, Cu, Zn, In, Sb and the like, and in particular, Sn—Pb, Sn. -Ag, Sn-Ag-Cu, Sn-Bi are preferable, and Sn-Ag, Sn-Ag-Cu, Sn-Bi, Sn-Zn which does not contain Pb which may affect the environment and the human body -Bi is more preferred.

The metal electrode 2 of the interposer 1 and the solder electrode 4 of the semiconductor chip 3 are joined by metal bonding, and the interposer 1 and the semiconductor chip 3 are electrically connected.
Further, the gap between the interposer 1 and the semiconductor chip 3 is filled with a resin layer 5 containing a thermosetting resin, and the function of improving the bonding strength between the interposer 1 and the semiconductor chip 3, The electronic component 10 having a function of preventing intrusion of foreign matter and moisture can be obtained.

  FIG. 2A is a longitudinal sectional view showing a configuration of an electronic component manufactured by the electronic component bonding method of the present invention. 2A is the same as the electronic component 10 shown in FIG. 1 except that the metal electrode 2 on the interposer 1 is changed to the solder electrode 12, and the solder electrode 12 of the interposer 11 and the semiconductor chip 13 are the same. These solder electrodes 14 are used.

FIG. 2B is a longitudinal sectional view showing the configuration of the electronic component manufactured by the electronic component bonding method of the present invention in the configuration of the electronic component shown in FIG. In the electronic component 20 shown in FIG. 2B, the solder electrode 12 on the interposer 11 and the solder electrode 14 of the semiconductor chip 13 are metal-bonded to form a joint portion 15, and the interposer 11 and the semiconductor chip 13 are connected to each other. Electrically connected.

FIG. 1 and FIG. 2 explained the case of an electronic component in which an interposer and a semiconductor chip are joined.
What is joined is not particularly limited, and those selected from a rigid substrate, a flexible substrate, a semiconductor chip, a semiconductor wafer, and the like can be appropriately combined.

<First joining method>
Such electronic components 10 and 20 can be manufactured as follows, for example.
FIG. 3 is a longitudinal sectional view for explaining a first joining method for joining a first electronic component having a connecting metal electrode and a second electronic component having a connecting solder electrode, and FIG. It is a longitudinal cross-sectional view for demonstrating the 2nd joining method which joins the 1st electronic component which has a solder electrode, and the 2nd electronic component which has a solder electrode for a connection.

  First, a method for obtaining a flip chip using a first joining method of a first electronic component having a connecting metal electrode and a second electronic component having a connecting solder electrode will be described.

[1A-1] First, an interposer 21 in which a metal electrode 22 is formed and a semiconductor chip 23 in which a solder electrode 24 is formed are prepared.
In the present embodiment, as shown in FIG. 3 (a), the interposer 21 is formed with a metal electrode 22, for example, polyimide, epoxy, cyanate, bismaleimide triazine (BT resin). The copper foil of a copper-clad laminate obtained by bonding a copper foil to an insulating substrate made of various resin materials such as) can be obtained by etching into a predetermined circuit shape.
Further, as shown in FIG. 3A, a solder electrode 24 is formed on the semiconductor chip 23. For example, the solder electrode 24 is plated on a metal electrode (not shown), screen printing, solder paste. It can be obtained by a technique such as coating.

  [1A-2] Next, as shown in FIG. 3B, a resin layer 25 containing a thermosetting resin is formed on the surface of the metal electrode 22 of the interposer 21 on which the metal electrode 22 is formed. (First step).

As a method of forming the resin layer 25 containing the thermosetting resin, it can be obtained by a technique such as lamination, coating, and printing. In this embodiment, the interposer 21
However, it may be formed on the surface of the solder electrode 24 of the semiconductor chip 23 on which the solder electrode 24 is formed. Further, a resin layer 25 containing a thermosetting resin may be formed on both the metal electrode 22 surface side of the interposer 21 and the solder electrode 24 surface side of the semiconductor chip 23.

  The conditions for laminating the resin layer 25 containing the thermosetting resin on the metal electrode 22 surface side of the interposer 21 on which the metal electrode 22 is formed are not particularly limited. For example, the temperature is 50 ° C. to 150 ° C. It can be performed under the condition of ° C. When the laminating temperature is equal to or lower than the above range temperature, the adhesion to the interposer 21 is insufficient, and the resin layer 25 containing the thermosetting resin may be peeled off when the interposer is transported. Further, when the laminating temperature is equal to or higher than the above range temperature, curing of the resin layer 25 containing the thermosetting resin proceeds and the fluidity of the resin layer 25 containing the thermosetting resin is lowered. When the solder electrode 24 is melt-bonded, the resin layer 25 containing a thermosetting resin may remain between the metal electrode 22 and the solder electrode 25, and a good solder joint may not be formed.

  The conditions for applying and printing the resin layer 25 containing a thermosetting resin on the surface of the metal electrode 22 of the interposer 21 on which the metal electrode 22 is formed are not particularly limited. Examples include coating and screen printing. Among these, screen printing is preferable.

  If the resin layer 25 containing the thermosetting resin according to the present invention includes a thermosetting resin for the purpose of improving reliability after the interposer 21 and the semiconductor chip 23 are bonded and bonded together, It is not limited and may be liquid at room temperature or film. Further, the resin layer 25 containing the thermosetting resin can improve the wettability of the solder component constituting the solder electrode 24, can promote the metal bond between the metal electrode 22 and the solder electrode 24, It is preferable to include a flux active compound in order to ensure that conduction through the junction 26 can be obtained. Furthermore, when the resin layer 25 containing a thermosetting resin is a film at normal temperature, it is preferable to contain a film-forming resin for the purpose of imparting film-forming ability.

  The thermosetting resin is bonded in the bonded body 40 of the interposer 21 and the semiconductor chip 23 obtained in the subsequent step (3-f) by the sealing portion 27 made of a cured product of the thermosetting resin. In addition to having the function of insulating the portions 26 from each other, the function of fixing (fixing) the interposer 21 and the semiconductor chip 23 is provided.

Such a thermosetting resin is not particularly limited, and examples thereof include epoxy resins, oxetane resins, phenol resins, (meth) acrylate resins, unsaturated polyester resins, diallyl phthalate resins, maleimide resins, and the like. Among these, it is preferable to use an epoxy resin. Since the epoxy resin has high heat resistance, it is pressurized by a pressurizing device having a plate-like body, and heated at a temperature higher than the melting point of the connecting solder electrode while maintaining the pressurization, When the solder is melt-bonded to the metal electrode for connection, and then the pressure is released after cooling to a temperature lower than the melting point of the solder before the melt-bonding , the resin layer 25 containing a thermosetting resin becomes a spring bag. Thus, it is possible to prevent the joint portion 26 from becoming unstable.

  As the epoxy resin, either an epoxy resin that is solid at room temperature or an epoxy resin that is liquid at room temperature may be used, or both of them may be included. By setting it as the structure using such an epoxy resin, the freedom degree of the design of the melting behavior of a thermosetting resin can further be raised.

  The epoxy resin solid at room temperature is not particularly limited. For example, bisphenol type epoxy resins such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol AD type epoxy resin, bisphenol E type epoxy resin, and phenol novolac type epoxy. Resin, novolak type epoxy resin such as cresol novolak type epoxy resin, aromatic glycidylamine type epoxy such as N, N-diglycidylaniline, N, N-diglycidyltoluidine, diaminodiphenylmethane type glycidylamine, aminophenol type glycidylamine Resin, hydroquinone type epoxy resin, biphenyl type epoxy resin such as biphenyl aralkyl type epoxy resin, stilbene type epoxy resin, triphenolmethane type epoxy resin, Rephenol propane type epoxy resin, alkyl modified triphenol methane type epoxy resin, triazine nucleus-containing epoxy resin, dicyclopentadiene modified phenol type epoxy resin, naphthol type epoxy resin, naphthalene type epoxy resin, phenol having phenylene and / or biphenylene skeleton Examples thereof include epoxy resins such as aralkyl type epoxy resins, aralkyl type epoxy resins such as naphthol aralkyl type epoxy resins having a phenylene and / or biphenylene skeleton, and one or more of these can be used in combination. .

  Moreover, although it does not specifically limit as a liquid epoxy resin at room temperature, A bisphenol A type epoxy resin, a bisphenol F type epoxy resin, etc. are mentioned, Among these, it can use combining 1 type (s) or 2 or more types.

  The epoxy equivalent of the epoxy resin that is liquid at room temperature is preferably 150 to 300, more preferably 160 to 250, and even more preferably 170 to 220. Thereby, it is possible to prevent the shrinkage rate in the cured product of the thermosetting resin from increasing, and to surely prevent the bonded portion 40 of the interposer 21 and the semiconductor chip 23 from being warped by the sealing portion 27. it can.

  Moreover, it is preferable that the compounding quantity of the thermosetting resin in the resin layer 25 containing a thermosetting resin is about 25 to 90 weight%, and it is more preferable that it is about 35 to 80 weight%. As a result, when the thermosetting resin is cured, good curability can be obtained, and a good melting behavior of the resin layer 25 containing the thermosetting resin can be designed.

  Moreover, it is preferable that the resin layer 25 containing a thermosetting resin contains the hardening | curing agent. Thereby, the sclerosis | hardenability of a thermosetting resin can be improved more.

  It does not specifically limit as a hardening | curing agent, For example, phenols, amines, and thiols are mentioned. Among these, when an epoxy resin is used as the thermosetting resin, it is preferable to use phenols. Thereby, in the resin layer 25 containing a thermosetting resin, favorable reactivity with an epoxy resin can be obtained. Furthermore, the epoxy resin contained in the resin layer 25 containing the thermosetting resin can be obtained. Low dimensional changes during curing and appropriate physical properties after curing (eg, heat resistance, moisture resistance, etc.) can be obtained.

  Moreover, as phenols, although it does not specifically limit, what has 2 or more of functional groups which can react with an epoxy resin is preferable. Thereby, the characteristic (for example, heat resistance, moisture resistance, etc.) of the hardened | cured material of the epoxy resin in the resin layer 25 containing a thermosetting resin can be aimed at.

Specific examples of such phenols include bisphenol A, tetramethylbisphenol A, diallyl bisphenol A, biphenol, bisphenol F, diallyl bisphenol F, trisphenol, tetrakisphenol, phenol novolacs, cresol novolacs, and the like. Is mentioned. Of these, phenol novolacs and cresol novolacs are preferably used. Thereby, the melt viscosity of the resin layer 25 containing a thermosetting resin can be made suitable, and the reactivity with an epoxy resin can be improved. Furthermore, the characteristics (for example, heat resistance, moisture resistance, etc.) of the cured epoxy resin in the resin layer 25 containing the thermosetting resin can be further improved.

  When phenol novolacs are used as the curing agent, the blending amount of the curing agent in the resin layer 25 containing the thermosetting resin is preferably about 5 to 30% by weight, and about 10 to 25% by weight. More preferably. Thereby, in the resin layer 25 containing a thermosetting resin, while being able to harden a thermosetting resin reliably, in the resin layer 25 containing a thermosetting resin, it is unreacted with a thermosetting resin. The curing agent is prevented from remaining, and migration due to the presence of this residue can be suitably prevented.

  In addition, when thermosetting resin is an epoxy resin, you may prescribe | regulate the compounding quantity of a phenol novolak resin with the equivalent ratio with respect to an epoxy resin.

  Specifically, the equivalent ratio of phenol novolacs to epoxy resin is preferably about 0.5 to 1.2, more preferably about 0.6 to 1.1, and 0.7 to 0. More preferably, it is about .98. By setting within this range, the same effects as described above can be obtained.

Specific examples of the amines include ethylenediamine, 1,3-diaminopropane 1,4-diaminobutane, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine, dipropylenediamine, diethylaminopropylamine. , Tri (methylamino) hexane, dimethylaminopropylamine, diethylaminopropylamine, methyliminobispropylamine, hexamethylenediamine, diaminodiphenylmethane, diaminodiphenylsulfone, isophoronediamine, mensendiamine, isophoronediamine, pis (4-amino -3-Methylzinchloro) methane, diaminozine cyclohexylmethane, N-aminoethylpiperazine, 3,9-bis (3-aminopropyl) , 4,8,10-tetraoxaspiro (5,5) undecane, 2,5-dimethylhexamethylenediamine, trimethylhexamethylenediamine, iminobispropylamine, bis (hexamethylene) triamine, m-xylenediamine, metaphenylene Examples include diamine, diaminodiethylphenylmethane, and polyether diamine.

  Furthermore, in addition to the curing agent described above, for example, an imidazole compound having a melting point of 150 ° C. or higher can be used. Thereby, the curability of the thermosetting resin is improved, and the process can be shortened.

  Examples of the imidazole compound having a melting point of 150 ° C. or higher include 2-methylimidazole, 2-ethyl-4-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, Examples include 2-phenylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, and the like. In addition, there is no restriction | limiting in particular in the upper limit of melting | fusing point of an imidazole compound, For example, what is necessary is just to select suitably according to the adhesion temperature of the resin layer 25 containing a thermosetting resin.

When such an imidazole compound is used as the curing agent, the blending amount of the curing agent in the resin layer 25 containing the thermosetting resin is preferably about 0.005 to 10% by weight, and 0.01 to 5 More preferably, it is about wt%. Accordingly, the function of the thermosetting resin as a curing catalyst can be more effectively exhibited, and in the resin layer 25 containing the thermosetting resin, the curability of the thermosetting resin can be improved. A decrease in storage stability of the resin layer 25 containing the curable resin can be suppressed.

  In addition, the above hardening | curing agents may be used independently and may be used in combination of 2 or more types.

  In the post-process (3-e), the flux active compound according to the present invention is such that the interposer 21 and the semiconductor chip 23 are pressed by a pressurizing device having a plate-like body, and the connecting solder in a state where the pressurization is maintained. It has a function of reducing the surface of the solder electrode 24 when heated at a temperature higher than the melting point of the electrode to melt and bond the solder of the connecting solder electrode to the connecting metal electrode. Thereby, the wettability of the solder component which comprises the solder electrode 24 can be improved, and the metal coupling | bonding of the metal electrode 22 and the solder electrode 24 can be accelerated | stimulated. As a result, conduction through the joint portion 26 can be reliably obtained.

  Further, such a flux active compound preferably has a functional group that binds to the thermosetting resin. Thus, the flux active compound functions as a curing agent when it is cured by heating the thermosetting resin, and is added to the thermosetting resin. As a result, in the resin layer 25 containing the thermosetting resin provided in the joined body 40 of the interposer 21 and the semiconductor chip 23 to be formed, occurrence of ion migration due to the flux active compound residue is suitably suppressed. be able to. Moreover, the effect that the elasticity modulus and / or glass transition temperature of the hardened | cured material of a thermosetting resin can be raised by adding a flux active compound to a thermosetting resin is also acquired.

  Considering the above, it is preferable to use a compound having a carboxyl group and / or a phenolic hydroxyl group as the flux active compound.

  The flux active compound having a carboxyl group and / or a phenolic hydroxyl group means a compound having at least one carboxyl group and / or phenolic hydroxyl group in the molecule, which may be liquid or solid. Good.

  Among these, examples of the flux active compound having a carboxyl group include aliphatic acid anhydrides, alicyclic acid anhydrides, aromatic acid anhydrides, aliphatic carboxylic acids, and aromatic carboxylic acids.

  Examples of the aliphatic acid anhydride include succinic anhydride, polyadipic acid anhydride, polyazeline acid anhydride, polysebacic acid anhydride, and the like.

  Alicyclic acid anhydrides include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylhymic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, methylcyclohexene dicarboxylic acid anhydride Thing etc. are mentioned.

  Examples of the aromatic acid anhydride include phthalic anhydride trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic acid anhydride, ethylene glycol bistrimellitate, glycerol tris trimellitate and the like.

  Examples of the aliphatic carboxylic acid include compounds represented by the following general formula (1), formic acid, acetic acid, propionic acid, butyric acid, valeric acid, caproic acid pivalate, caprylic acid, lauric acid, myristic acid, palmitic acid, stearic acid Acrylic acid, methacrylic acid, crotonic acid, oleic acid, fumaric acid, maleic acid, oxalic acid, malonic acid, oxalic acid and the like.

_{HOOC- (CH 2) n -COOH ···} (1)
[Wherein, n represents an integer of 0 or more and 20 or less. ]

  Aromatic carboxylic acids include benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, hemimellitic acid, trimellitic acid, trimesic acid, merophanic acid, platnic acid, pyromellitic acid, merit acid, triylic acid, xylyl acid, hemelit Acid, mesitylene acid, prenylic acid, toluic acid, cinnamic acid, salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6-dihydroxy Benzoic acid, 3,5-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, etc. Naphthoic acid derivatives; phenolphthaline; diphenolic acid and the like.

  Among these, the activity of the flux active compound, the amount of outgas generated when the thermosetting resin is cured, and the elastic modulus and glass transition temperature of the sealing portion 27 provided in the joined body 40 of the interposer 21 and the semiconductor chip 23. In view of such a balance, it is preferable to use the compound represented by the above general formula (1), and more preferably n in the formula is about 3 to 10. Thereby, in the joined body 40 of the interposer 21 and the semiconductor chip 23, it is possible to suppress an increase in the elastic modulus in the cured product of the thermosetting resin, and the cured product and the interposer 21 and the semiconductor chip 23. It is possible to improve the adhesion.

In the compound represented by the general formula (1), n is 3 to 10, for example, n = 3 glutaric acid (HOOC— (CH ₂ ) ₃ —COOH), n = 4 adipic acid (HOOC) _{- (CH 2) 4 -COOH)} , n = 5 of pimelic acid _{(HOOC- (CH 2) 5 -COOH} ), sebacic acid of _{n = 8 (HOOC- (CH 2} ) of 8 -COOH), and n = 10 HOOC- _{(CH 2)} 10 -COOH, and the like.

  Furthermore, examples of the flux active compound having a phenolic hydroxyl group include phenols. Specifically, for example, phenol, o-cresol, 2,6-xylenol, p-cresol, m-cresol, o-ethylphenol. 2,4-xylenol, 2,5 xylenol, m-ethylphenol, 2,3-xylenol, meditol, 3,5-xylenol, p-tertiarybutylphenol, catechol, p-tertiaryamylphenol, resorcinol, p- Mo-containing phenolic hydroxyl groups such as octylphenol, p-phenylphenol, bisphenol A, bisphenol F, bisphenol AF, biphenol, diallyl bisphenol F, diallyl bisphenol A, trisphenol, tetrakisphenol Mer, phenol novolak resins, o- cresol novolak resin, bisphenol F novolac resin, bisphenol A novolac resins.

  The flux active compound having a carboxyl group and / or a phenolic hydroxyl group as described above is taken in three-dimensionally by reaction with a thermosetting resin such as an epoxy resin.

  Therefore, from the viewpoint of improving the formation of a three-dimensional network of the epoxy resin after curing, at least two phenolic hydroxyl groups that can be added to the epoxy resin in one molecule and a flux action (reduction to the solder) It is preferred to have at least one carboxyl group in one molecule that is directly bonded to an aromatic group that exhibits an action.

Examples of such flux active compounds include 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6-dihydroxybenzoic acid, and 3,4-dihydroxy. Benzoic acid derivatives such as benzoic acid and gallic acid (3,4,5-trihydroxybenzoic acid); 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3,7-dihydroxy Naphthoic acid derivatives such as -2-naphthoic acid; phenolphthaline; and diphenolic acid, etc., but gentisic acid (2,5-dihydroxybenzoic acid, which has both physical properties after curing thermosetting resin and flux action ), 2,6-dihydroxybenzoic acid and phenolphthalin are preferred. These flux active compounds can be used alone or in combination of two or more.

Moreover, it is preferable that the compounding quantity of the flux active compound in the resin layer 25 containing a thermosetting resin is about 1 to 30 weight%, and it is more preferable that it is about 3 to 25 weight%. Thereby, while being able to improve the flux activity in the resin layer 25 containing a thermosetting resin, in the sealing part 27 with which the joined body 40 of the interposer 21 and the semiconductor chip 23 is provided, the thermosetting resin And unreacted flux-active compounds are prevented from remaining, and migration due to the presence of this residue can be suitably prevented.
Moreover, it is preferable that such a flux active compound is uniformly disperse | distributed in the resin layer 25 containing a thermosetting resin. As described above, by uniformly dispersing, the flux active compound can be efficiently moved to the interface between the metal electrode 22 and the solder electrode to directly contact them. As a result, the connection reliability of the joint portion 26 can be improved.

  When the resin layer 25 containing a thermosetting resin is a film form, it is preferable to contain a film-forming resin. Examples of the film-forming resin include (meth) acrylic resin, phenoxy resin, polyester resin, polyurethane resin, polyimide resin, siloxane-modified polyimide resin, polybutadiene, polypropylene, styrene-butadiene-styrene copolymer, styrene-ethylene- Butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer Examples include coalescence, polyvinyl acetate, nylon, etc., (meth) acrylic tree, which is excellent in film forming ability and adhesion between interposer 21 and semiconductor chip 23 , Phenoxy resins, polyimide resins are preferred. Moreover, the said film forming resin can be used 1 type in these illustrations, or 2 or more types in combination.

  In the present specification, (meth) acrylic resin means a polymer of (meth) acrylic acid and its derivatives, or a copolymer of (meth) acrylic acid and its derivatives and other monomers. To do. Here, when it describes with (meth) acrylic acid etc., it means acrylic acid or methacrylic acid.

Specific examples of the (meth) acrylic resin include polyacrylic acid, polymethacrylic acid, polymethyl acrylate, polyethyl acrylate, polybutyl acrylate, polyacrylic acid-2-ethylhexyl and the like. , Polymethacrylates such as polymethyl methacrylate, polyethyl methacrylate, polybutyl methacrylate, polyacrylonitrile, polymethacrylonitrile, polyacrylamide, butyl acrylate-ethyl acrylate-acrylonitrile copolymer, acrylonitrile-butadiene copolymer Polymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, acrylonitrile-styrene copolymer, methyl methacrylate-styrene copolymer, methyl methacrylate-a Lironitrile copolymer, methyl methacrylate-α-methylstyrene copolymer, butyl acrylate-ethyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate-methacrylic acid copolymer, butyl acrylate-ethyl acrylate-acrylonitrile-2 -Hydroxyethyl methacrylate-acrylic acid copolymer, butyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate copolymer, butyl acrylate-acrylonitrile-acrylic acid copolymer, butyl acrylate-ethyl acrylate-acrylonitrile copolymer And ethyl acrylate-acrylonitrile-N, N dimethylacrylamide copolymer. Among these, butyl acrylate-ethyl acrylate-acrylonitrile copolymer-2-hydroxyethyl methacrylate-methacrylic acid and ethyl acrylate-acrylonitrile-N, N dimethylacrylamide are preferable.

By using a (meth) acrylic resin obtained by copolymerizing a monomer having a functional group such as a nitrile group, an epoxy group, a hydroxyl group, or a carboxyl group, the resin layer 25 containing a thermosetting resin can be used as an interpolymer. Adhesiveness to the poser 21 and the semiconductor chip 23 and compatibility with a thermosetting resin or the like can be improved. In such a (meth) acrylic resin, the amount of the monomer having the functional group is not particularly limited, but is about 0.1 to 50 mol% with respect to the total weight of the (meth) acrylic resin. Is more preferable, about 0.5 to 45 mol% is more preferable, and about 1 to 40 mol% is more preferable. By setting within this range, the adhesion of the resin layer 25 containing the thermosetting resin to the interposer 21 and the semiconductor chip 23 is excellent, and the adhesive strength of the resin layer 25 containing the thermosetting resin is improved. Can be suitably prevented from becoming too strong, and workability can be improved.

  The weight average molecular weight of the (meth) acrylic resin is not particularly limited, but is preferably 100,000 or more, more preferably about 150,000 to 1,000,000, and about 250,000 to 900,000. Further preferred. By setting the weight average molecular weight within the above range, the film formability of the resin layer 25 containing a thermosetting resin can be improved.

  Moreover, when using a phenoxy resin as a film-forming resin, it is preferable to use a resin having a number average molecular weight of about 5000 to 15000. By using such a phenoxy resin having a number average molecular weight, the fluidity of the resin layer 25 containing the thermosetting resin can be suppressed, and the thickness of the resin layer 25 containing the thermosetting resin can be made uniform. .

  The skeleton of the phenoxy resin is not particularly limited, and examples thereof include bisphenol A type, bisphenol F type, and biphenyl skeleton type. Among these, a phenoxy resin having a saturated water absorption of 1% or less is preferable. Thereby, even when the joined body 40 of the interposer 21 and the semiconductor chip 23 is formed or exposed to a high temperature condition, the occurrence of foaming or peeling due to the resin layer 25 containing the thermosetting resin is suppressed. can do.

  The saturated water absorption rate is obtained by processing a phenoxy resin into a film having a thickness of 25 μm, drying it in a 100 ° C. atmosphere for 1 hour (an absolutely dry state), and further converting the film into a constant temperature and high humidity layer in a 40 ° C. and 90% RH atmosphere. The weight change is measured every 24 hours, and the weight at the time when the weight change is saturated can be calculated by the following formula (III).

  Saturated water absorption (%) = {(weight when saturated) − (weight when absolutely dry)} / (weight when absolutely dry) × 100 (III)

  Moreover, when using a polyimide resin as film forming resin, what has an imide bond in a repeating unit is mentioned as a polyimide resin.

Examples of such a polyimide resin include those obtained by reacting diamine and acid dianhydride and heating and dehydrating and ring-closing the resulting polyamic acid. Examples of the diamine include aromatic diamines such as 3,3′-dimethyl-4,4′diaminodiphenyl, 4,6-dimethyl-m-phenylenediamine, 2,5-dimethyl-p-phenylenediamine, and siloxane diamine. 1,3-bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane and the like, and one or more of them can be used in combination.

  Examples of the acid dianhydride include 3,3,4,4'-biphenyltetracarboxylic acid, pyromellitic dianhydride, 4,4'-oxydiphthalic dianhydride, and the like.

  In addition, although such a polyimide resin can use what is soluble in the solvent mentioned later, or insoluble, it is preferable that it is soluble in a solvent. In particular, the siloxane-modified polyimide resin is preferably used because it can be dissolved in various solvents.

  When the resin layer 25 containing such a thermosetting resin is liquid at room temperature, for example, a thermosetting resin, and if necessary, a flux active compound, a film-forming resin, and other components are weighed. It can be obtained by dispersing and kneading with this roll and defoaming under vacuum.

  The resin layer 25 containing a thermosetting resin may contain additives such as a filler, a coupling agent, a low stress agent, a plasticizer, and a colorant as necessary.

  When the resin layer 25 containing such a thermosetting resin is a film at room temperature, for example, a thermosetting resin, and if necessary, a flux active compound, a film-forming resin, and other components in a solvent. Dissolve to prepare a bonding sheet forming material (liquid material), and then apply this bonding sheet forming material on a base material that has been subjected to a peeling treatment such as a polyester sheet. It can be obtained by removing and drying.

Examples of the solvent used here include ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, DIBK (diisobutyl ketone), cyclohexanone, and DAA (diacetone alcohol), and aromatic hydrocarbons such as benzene, xylene, and toluene. , Alcohols such as methyl alcohol, ethyl alcohol, isopropyl alcohol, n-butyl alcohol, cellosolve such as methyl cellosolve, ethyl cellosolve, butyl cellosolve, methyl cellosolve acetate, ethyl cellosolve acetate, BCSA (butyrocellosolve acetate), NMP ( N-methyl-2-pyrrolidone), THF (tetrahydrofuran), DMF (dimethylformamide), DBE (dibasic acid ester), EEP (3-ethoxypropionic acid ester) Le), DMC (dimethyl carbonate) and the like.

  The thickness (average) of the resin layer 25 containing the thermosetting resin is not particularly limited, but is preferably about 5 to 300 μm, more preferably about 10 to 200 μm.

[1A-3] Next, as shown in FIG. 3C, positioning is performed so that the metal electrode 22 of the interposer 21 and the solder electrode 24 of the semiconductor chip 23 correspond to each other. Next, as shown in FIG. 3D, the metal electrode 22 and the solder electrode 24 are brought into contact with each other by heating and pressurizing at a temperature lower than the melting point of the solder of the solder electrode 24, thereby interposer. A stacked body 30 of the semiconductor chip 21 and the semiconductor chip 23 is formed (second step).

Specifically, the metal electrode 22 and the solder electrode 24 are brought into contact with each other by heating and pressing at a temperature at which the thermal expansion coefficient of the solder of the solder electrode 24 is 30 × 10 ⁻⁶ / ° C. or less. It is preferable to form a stacked body 30 of the interposer 21 and the semiconductor chip 23. As a result, the resin layer 25 containing a thermosetting resin is interposed between the metal electrode 22 and the solder electrode 24, and it is possible to prevent the occurrence of poor bonding. Further, the metal electrode 22 is melt bonded to the solder electrode 24. When it is made (described later), the fluidity of the resin layer 25 containing the thermosetting resin can be ensured, and the surfaces of the metal electrode 22 and the solder electrode 24 can be covered. 22 and the oxide film on the surface of the solder electrode 24 can be removed.

The thermal expansion coefficient of the solder of the solder electrode 24 can be obtained by the following method.
The thermal expansion coefficient at or above the melting point of the solder can be calculated by a metal material property value calculation software database JMatPro (manufactured by Sente Software).
The thermal expansion coefficient below the melting point of the solder can be calculated by a thermomechanical characteristic analyzer (mode: compression, load: 50 N, temperature increase rate: 5 ° C./min).

More specifically, the metal electrode 22 and the solder electrode 24 are brought into contact with each other by heating and pressing at 190 ° C. or lower, preferably 180 ° C. or lower, and more preferably 170 ° C. or lower. A stacked body 30 of the poser 21 and the semiconductor chip 23 is formed.

  The positioning method is not particularly limited. However, the metal electrode 22 of the interposer 21 and the solder electrode 24 of the semiconductor chip 23 may be positioned by a method using an alignment mark or the like. it can.

[1A-4] Next, as shown in FIG. 3E, the laminated body 30 of the interposer 21 and the semiconductor chip 23 in which the metal electrode 22 and the solder electrode 24 are in contact with each other is added to the plate-like body. The pressure is applied by a pressure device and heated at a temperature higher than the melting point of the solder of the solder electrode 24 in a state where the pressure is maintained, and the solder of the connecting solder electrode is melt bonded to the connecting metal electrode, and then the molten bonding The metal electrode 22 and the solder electrode 24 are melt-bonded by releasing the pressure after cooling to a temperature lower than the melting point of the previous solder, thereby forming a joint portion 26 (third step).

  The method for pressurizing the laminate 30 of the interposer 21 and the semiconductor chip 23 by the pressurizing apparatus having the plate-like body in the third step is not particularly limited. Examples include a pressure device that can perform both pressure and heating, such as a flip chip bonder, and a pressure device in the form of a block or pillar formed of an inorganic or organic material such as metal or ceramic. A thermocompression bonding machine and a flip chip bonder that can perform both pressurization and heating and are excellent in productivity of electronic components are preferable.

A method of using a pressurizing apparatus capable of both pressurization and heating, such as the thermocompression bonding machine and the flip chip bonder, is not particularly limited, but the pressurizing unit (plate-like body) of the pressurizing apparatus is not limited. The laminated body 30 of the interposer 21 and the semiconductor chip 23 is installed at the corresponding position, and then the laminated body 30 of the interposer 21 and the semiconductor chip 23 is pressurized by the pressurizing unit. At this time, the pressurizing unit may be preheated, or may be heated after pressurization.
The heating method is not particularly limited, and examples thereof include a constant heat method and a pulse heat method. A pulse heat method in which the heating timing can be appropriately changed is preferable.

A method of using a pressure device such as a block shape or a column shape formed of an inorganic material or an organic material such as metal or ceramic is not particularly limited, but the interposer 21 and the semiconductor chip 23 are stacked. A block-shaped pressurizing device is placed on the body 30 to pressurize the stacked body 30 of the interposer 21 and the semiconductor chip 23. At this time, a block-shaped pressurizing device may be placed in a state where the laminated body 30 of the interposer 21 and the semiconductor chip 23 is heated, or may be heated after pressurization. The heating method is not particularly limited, but a method of placing the laminate 30 of the interposer 21 and the semiconductor chip 23 in a commercially available oven, or solder reflowing the laminate 30 of the interposer 21 and the semiconductor chip 23. The method etc. which are installed in an apparatus are mentioned.

  The pressurizing conditions by the pressurizing apparatus capable of both pressurizing and heating such as the thermocompression bonding machine and the flip chip bonder are not particularly limited, and may be performed under conditions such as 0.001 to 5.0 MPa. Preferably, it is 0.0015 to 4.5 MPa, and particularly preferably 0.002 to 4.0 MPa. By setting it to the above lower limit value or more, generation of voids (air gaps) and voids (bubbles) in the resin layer 25 containing the thermosetting resin can be more effectively prevented, and the metal electrode 22 and the solder The wettability of the electrode 24 can be improved. Moreover, by setting it as the said upper limit or less, while being able to prevent a semiconductor chip crack, it can prevent effectively that the solder of the solder electrode 24 scatters.

Moreover, the conditions of pressurization by a press device such as a block or support formed of an inorganic material or an organic material such as metal or ceramic are not particularly limited, and 0.0005 to 0.3 MPa, etc. The pressure is preferably 0.001 to 0.2 MPa, particularly preferably 0.002 to 0.1 MPa. By setting it to the above lower limit value or more, generation of voids (air gaps) and voids (bubbles) in the resin layer 25 containing the thermosetting resin can be more effectively prevented, and the metal electrode 22 and the solder The wettability of the electrode 24 can be improved. Moreover, it can prevent effectively that the solder of the solder electrode 24 scatters by setting it as the said upper limit or less.

The heating temperature in the third step is preferably performed at a temperature at which the thermal expansion coefficient of the solder of the solder electrode 24 is greater than 30 × 10 ⁻⁶ / ° C. By setting the heating temperature within the above range, the solder of the solder electrode 24 is sufficiently wetted and spread, so that the metal electrode 22 and the solder electrode 24 can be surely melt-bonded to form the joint portion 26.

  More specifically, the temperature is higher than 200 ° C, preferably higher than 205 ° C, particularly preferably higher than 210 ° C. By setting the heating temperature in the third step to the above range or more, the solder of the solder electrode 24 is sufficiently wetted and spread, so that the metal electrode 22 and the solder electrode 24 are surely melt-bonded to form the joint portion 26. Can do.

In the third step, the pressure is released after cooling to a temperature lower than the melting point of the solder before the melt bonding . Thereby, when releasing the pressurization, it can be prevented that the solder of the joint portion is spring-bagged and the interval between the interposer 21 and the semiconductor chip 23 is widened to cause a joint failure.

Specifically, the pressure is released after cooling to a temperature at which the thermal expansion coefficient of the solder before the melt bonding is 30 × 10 ⁻⁶ / ° C. or less. Thereby, when releasing the pressurization, it is possible to effectively prevent the solder at the joining portion from being spring-backed and the gap between the interposer 21 and the semiconductor chip 23 from being widened, resulting in a joining failure.

More specifically, the temperature is 210 ° C. or lower , preferably 200 ° C. or lower, particularly preferably 190 ° C. or lower. As a result, the solder at the joint portion is spring-bagted and the distance between the interposer 21 and the semiconductor chip 23 is increased. Therefore, it is possible to prevent the occurrence of poor bonding.

The third step may be performed in an atmosphere pressurized with a pressurized fluid. A method for performing the third step in an atmosphere pressurized with the pressurized fluid is not particularly limited, but both pressure and heating of a thermocompression bonding machine, a flip chip bonder, etc. are included in the pressure vessel. A method of introducing a pressurizing gas, a laminate 30 of an interposer 21 and a semiconductor chip 23 installed in a pressure vessel, and further, a metal, ceramic, etc. Examples thereof include a method in which a pressurizing device such as a block shape or a columnar shape made of an inorganic material or an organic material is placed and a gas for pressurization is introduced. Thereby, generation | occurrence | production of the cavity (air gap) and the void (bubble) in the resin layer containing a thermosetting resin can be suppressed. This is because the cavity (air gap) and void (bubble) are compressed by the pressure difference between the air pressure and the void (air gap) in the resin layer 25 containing the thermosetting resin, and the cavity (air gap). ) And voids (bubbles) are diffused into the resin layer containing the thermosetting resin, and the generation of voids (air gaps) and voids (bubbles) can be suppressed.

  The pressurizing gas is not particularly limited, and examples thereof include nitrogen and air. Nitrogen that can more efficiently prevent oxidation of the metal electrode 22 and the solder electrode 24 is preferable.

  The conditions for pressurization with the pressurized fluid are not particularly limited, and can be performed under conditions such as 0.2 to 1 MPa, preferably 0.3 to 0.9 MPa, and particularly preferably 0.4 to 0.8 MPa. By setting the pressurizing condition with the pressurized fluid within the above range, the metal electrode 22 and the solder electrode 24 are surely melt-bonded, and the cavity (air gap) and voids in the resin layer containing the thermosetting resin ( Occurrence of bubbles) can be suppressed.

[1A-5] Next, as shown in FIG. 3F, the laminate 30 of the interposer 21 and the semiconductor chip 23 in which the metal electrode 22 and the solder electrode 24 are melt-bonded is bonded to the solder before the melt-bonding. By heating to a temperature lower than the melting point of the resin, the resin layer 25 containing the thermosetting resin is cured to form the sealing portion 27, and the joined body 40 of the interposer 21 and the semiconductor chip 23 is obtained (fourth step). ).
Thereby, it can prevent that the solder of the junction part 26 melts again and electrical connection becomes unstable.

Specifically, the specific heating temperature in the fourth step is such that the thermosetting resin is heated to a temperature at which the thermal expansion coefficient of the solder before the melt bonding is 30 × 10 ⁻⁶ / ° C. or less. It is preferable to cure the resin layer 25 contained. Thereby, it can prevent that the solder of the junction part 26 melts again and electrical connection becomes unstable.

  Furthermore, specifically, the specific heating temperature in the fourth step is preferably 210 ° C. or lower, more preferably 200 ° C. or lower, and particularly preferably 190 ° C. or lower. Thereby, it can prevent that the solder of the junction part 26 melts again and electrical connection becomes unstable.

  The interposer 21 and the semiconductor chip 23 laminated body 30 may be heated at a predetermined single temperature, for example, a step cure of heating at 150 ° C. for 30 minutes and then heating at 180 ° C. for 30 minutes, After thermocompression bonding at 150 ° C. for 30 seconds, post-cure for oven curing at 180 ° C. for 60 minutes may be performed.

Moreover, when hardening the resin layer 25 containing a thermosetting resin, it is preferable to pressurize with a pressurized fluid. The method of heating in a state pressurized by a pressurized fluid is not particularly limited, but the laminate 30 of the interposer 21 and the semiconductor chip 23 is installed in the pressure vessel, and then in the pressure vessel. , A method of heating the laminated body 30 of the interposer 21 and the semiconductor chip 23 while introducing and pressurizing a pressurized fluid, more specifically, laminating the interposer 21 and the semiconductor chip 23 in a pressure oven. There is a method in which the body 30 is installed and a processing object is heated in the pressure oven while introducing a gas for pressurization into the pressure oven. The pressurizing gas is not particularly limited, and examples thereof include nitrogen and air. Nitrogen that can more efficiently prevent oxidation of the metal electrode 22 and the solder electrode 24 is preferable. Thereby, the cavity (air gap) and the void (bubble) are compressed by the pressure difference between the cavity (air gap) and the void (bubble) in the resin layer 25 containing the atmospheric pressure and the thermosetting resin, and the cavity (air gap) is compressed. ) And voids (bubbles) diffuse in the resin layer 25 containing the thermosetting resin, and the effect of suppressing the generation of cavities (air gaps) and voids (bubbles) can be further enhanced.

  The conditions for pressurization with the pressurized fluid are not particularly limited, and can be performed under conditions such as 0.2 to 1 MPa, preferably 0.3 to 0.9 MPa, and particularly preferably 0.4 to 0.8 MPa. → Is the pressure condition for curing the resin layer the same as above? By setting the pressurizing condition with the pressurized fluid within the above range, the generation of cavities (air gaps) and voids (bubbles) in the resin layer containing the thermosetting resin can be suppressed. This is because the cavity (air gap) and void (bubble) are compressed by the pressure difference between the air pressure and the void (air gap) in the resin layer 25 containing the thermosetting resin, and the cavity (air gap). ) And voids (bubbles) diffuse into the resin layer containing the thermosetting resin, and the effect of suppressing the generation of cavities (air gaps) and voids (bubbles) can be further enhanced.

As described above, pressure is applied by a pressure device having a plate-like body, and heating is performed at a temperature higher than the melting point of the connecting solder electrode while the pressure is maintained, and the solder of the connecting solder electrode is applied to the connecting metal electrode. After being melt-bonded, the pressure is released after cooling to a temperature lower than the melting point of the solder before the melt-bonding , and then a thermosetting resin is contained at a temperature lower than the melting point of the solder before the melt-bonding By curing the resin layer 25, the interposer 21 and the semiconductor chip 23 are electrically connected to each other, and further, the joined body 40 of the interposer 21 and the semiconductor chip 23, to which the interposer 21 and the semiconductor chip are fixed, is formed. be able to. The joined body 40 of the interposer 21 and the semiconductor chip 23 is pressurized by a pressurizing device having a plate-like body, and heated at a temperature higher than the melting point of the connecting solder electrode in a state in which the pressurization is maintained. The solder is bonded to the connecting metal electrode, and then the pressure is released after cooling to a temperature lower than the melting point of the solder before the fusion bonding, so that the interposer 21 and the semiconductor chip 23 with less generation of voids and voids are formed. The joined body 40 can be obtained.

  Here, in the present invention, the first electronic component and the second electronic component are electrically connected via a solidified material such as the joint portion 26. Therefore, when the electronic component 10 is driven, even if the sealing portion 27 made of the thermosetting resin expands due to the heat generated by the semiconductor chip 20, this electrical connection is preferably prevented from being disconnected. And stable conduction can be obtained between the first electronic component and the second electronic component. That is, an electrical connection with excellent connection reliability can be obtained between the first electronic component and the second electronic component.

  The thickness of the bonding portion 26, that is, the thickness (average) of the bonding portion 26 in the bonded body 40 of the semiconductor interposer 21 and the semiconductor chip 23 is not particularly limited, but is preferably about 3 to 300 μm. More preferably, it is about ~ 150 μm. Thus, by reducing the distance between the interposer 21 and the semiconductor chip 23, the overall thickness of the electronic component 10 can be reduced, and the weight of the electronic component 10 can be further reduced.

<Second joining method>
Next, a method for obtaining a flip chip by using the second joining method of the first electronic component having the connecting solder electrode and the second electronic component having the connecting solder electrode will be described.

[2A-1] First, the interposer 31 in which the solder electrode 32 is formed and the semiconductor chip 33 in which the solder electrode 34 is formed are prepared. Here, the solder electrode 32 and the solder electrode 34 may be made of the same material or different.
In the present embodiment, as shown in FIG. 4A, the interposer 31 has a solder electrode 32 formed thereon. For example, the solder electrode 32 has been described in the step [1A-1]. It can be obtained by etching a copper foil of a copper-clad laminate obtained by bonding a copper foil to a similar insulating substrate into a predetermined circuit shape, and further solder plating.
Further, as shown in FIG. 4A, a solder electrode 34 is formed on the semiconductor chip 33, and the solder electrode 34 is obtained by the same method as described in the step [1A-1]. be able to.

  [2A-2] Next, as shown in FIG. 4B, a resin layer 35 containing a thermosetting resin is formed on the surface of the solder electrode 32 of the interposer 31 on which the solder electrode 32 is formed. (First step).

  As a method of forming the resin layer 35 containing a thermosetting resin, the same method as in the above step [1A-2] can be used.

  Moreover, the resin layer 35 containing the thermosetting resin according to the second bonding method may be the same as the resin layer containing the thermosetting resin according to the first bonding method.

[2A-3] Next, as shown in FIG. 4C, the solder electrodes 32 of the interposer 31 and the solder electrodes 34 of the semiconductor chip 33 are positioned so as to correspond to each other. Next, as shown in FIG. 4D, at a temperature lower than the melting point of the solder of the solder electrode 32 and the solder electrode 34, specifically, the thermal expansion coefficient is 30 × 10 ⁻⁶ / ° C. or less, In addition, the resin layer 35 containing the thermosetting resin is heated at a temperature at which the degree of cure is 80% or less, more specifically 190 ° C. or less, preferably 180 ° C. or less, more preferably 170 ° C. or less. Then, by pressurizing, the solder electrode 32 and the solder electrode 34 are brought into contact with each other to form a laminate 50 of the interposer 31 and the semiconductor chip 33 (second step).

As the positioning method, the same method as in the step [1A-3] can be used.
Further, as a method of bringing the solder electrode 32 and the solder electrode 34 into contact with each other, the same method as in the step [1A-3] can be used.

[2A-4] Next, as shown in FIG. 4E, the laminated body 50 of the interposer 31 and the semiconductor chip 33 in which the solder electrode 32 and the solder electrode 34 are brought into contact with each other is added to a plate-like body. The pressure is applied by a pressure device and heated at a temperature higher than the melting point of at least one solder of the solder electrode 32 or the solder electrode 34 in a state where the pressure is maintained, and the solder electrode 32 and the solder electrode 34 are melted and joined. The pressure is released after cooling to a temperature lower than the melting point of the solder before the melt bonding , whereby the solder electrode 32 and the solder electrode 34 are melt-bonded to form a joint portion 36 (third step). Thereby, the solder of the solder electrode 32 and / or the solder electrode 34 is sufficiently wetted and spread, so that the solder electrode 32 and the solder electrode 34 can be surely melted and joined to form the joint portion 36.

Specifically, the thermal expansion coefficient of the solder of at least one of the solder electrode 32 and the solder electrode 34 is 30 × 10 ⁻⁶ / ⁶ in a state in which the pressure is applied by a pressure device having a plate-like body and the pressure is maintained. After heating at a temperature higher than 0 ° C., the solder electrode 32 and the solder electrode 34 are melt-bonded, and then cooled to a temperature at which the thermal expansion coefficient of the solder before the melt-bonding is 30 × 10 ⁻⁶ / ° C. or less. By releasing the pressurization, the solder electrode 32 and the solder electrode 34 are melt-bonded to form a joint 36. Thereby, the solder of the solder electrode 32 and / or the solder electrode 34 is sufficiently wetted and spread, so that the solder electrode 32 and the solder electrode 34 can be surely melted and joined to form the joint portion 36 .

  More specifically, the pressure is applied by a pressure device having a plate-like body, and the pressure is maintained at a temperature higher than 200 ° C, preferably higher than 205 ° C, and more preferably higher than 210 ° C. Heating at a high temperature to melt-bond the solder electrode 32 and the solder electrode 34, and then releasing the pressure after cooling to 210 ° C. or lower, preferably 200 ° C. or lower, more preferably 190 ° C. or lower. Thus, the solder electrode 32 and the solder electrode 34 are melt-bonded to form a joint portion 36. Thereby, the solder of the solder electrode 32 and / or the solder electrode 34 is sufficiently wetted and spread, so that the solder electrode 32 and the solder electrode 34 can be surely melted and joined to form the joint portion 36.

The pressure device having the plate-like body is not particularly limited, and the step [1A
-4] can be used. Moreover, the method similar to said process [1A-4] can be used for the method of the pressurization and heating by the pressurization apparatus which has the said plate-shaped object.

Moreover, the pressurization by the pressurizing apparatus having the plate-like body is not particularly limited, but may be performed in an atmosphere pressurized by a pressurized fluid. The pressurized fluid pressurization can use the same method as in the above-mentioned step [1A-4]. Thereby, generation | occurrence | production of the cavity (air gap) and the void (bubble) in the resin layer containing a thermosetting resin can be suppressed.

[1A-5] Next, as shown in FIG. 4F, the laminate 50 of the interposer 31 and the semiconductor chip 33 in which the solder electrode 32 and the solder electrode 34 are melt-bonded is bonded to the solder before the melt-bonding. The resin layer 35 containing a thermosetting resin is cured at a temperature lower than the melting point of the resin, the sealing portion 37 is formed, and the joined body 60 of the interposer 31 and the semiconductor chip 33 is obtained (fourth step). Thereby, it can prevent that the junction part 36 melts again and electrical connection becomes unstable.

Specifically, the laminate 50 of the interposer 31 and the semiconductor chip 33 in which the solder electrode 32 and the solder electrode 34 are melt-bonded has a thermal expansion coefficient of 30 × 10 ⁻⁶ / ° C. or less before the solder bonding. The resin layer 35 containing the thermosetting resin is cured by heating at a temperature such that the sealing portion 37 is formed, and the joined body 60 of the interposer 31 and the semiconductor chip 33 is obtained. Thereby, it can prevent effectively that the junction part 36 melts again and electrical connection becomes unstable.

More specifically, the laminated body 50 of the interposer 31 and the semiconductor chip 33 in which the solder electrode 32 and the solder electrode 34 are melt-bonded is 190 ° C. or less, preferably 180 ° C. or less, and more preferably 170 ° C. It heats below and the resin layer 35 containing a thermosetting resin is hardened, the sealing part 37 is formed, and the joined body 60 of the interposer 31 and the semiconductor chip 33 is obtained. Thereby, it can prevent effectively that the junction part 36 melts again and electrical connection becomes unstable.

  Moreover, when hardening the resin layer 35 containing a thermosetting resin, it is preferable to pressurize with a pressurized fluid like the said process [1A-5]. As a condition for pressurization with the pressurized fluid, the same method as in the above step [1A-5] can be used. Thereby, the cavity (air gap) and the void (bubble) are compressed by the pressure difference between the cavity (air gap) and the void (bubble) in the resin layer 35 containing the atmospheric pressure and the thermosetting resin, and the cavity (air gap) is compressed. ) And voids (bubbles) diffuse into the resin layer containing the thermosetting resin, and the effect of suppressing the generation of cavities (air gaps) and voids (bubbles) can be further enhanced.

As described above, the pressure is applied by the pressure device having a plate-like body, and the pressure is maintained and the heating is performed at a temperature higher than the melting point of the connection solder electrode, so that the solder of the connection solder electrode is melted. <br/> After fusion bonding, after cooling to a temperature lower than the melting point of the solder before the fusion bonding , the pressure is released, and then thermosetting at a temperature lower than the melting point of the solder before the fusion bonding . By curing the resin layer 35 containing resin, the interposer 31 and the semiconductor chip 33 are electrically connected, and the interposer 31 and the semiconductor chip 33 are bonded to each other. 60 can be formed. Bonded body 60 of the interposer 31 and the semiconductor chip 33 is pressed by the pressure device having a plate-like body, said heating at a temperature higher than the melting point of the solder for the connection while holding the pressure electrode, the connection In order to melt and bond the solders of the solder electrodes for the solder , and then to release the pressure after cooling to a temperature lower than the melting point of the solder before the melt bonding, the interposer 31 and the semiconductor chip 33 with less generation of voids and voids are formed. The joined body 60 can be obtained.

  Here, in the present invention, the first electronic component and the second electronic component are electrically connected to each other through a solidified material such as the joint portion 36. Therefore, when the electronic component 10 is driven, the electrical connection is preferably prevented from being disconnected even if the sealing portion 37 made of the thermosetting resin expands due to heat generated by the semiconductor chip 20. And stable conduction can be obtained between the first electronic component and the second electronic component. That is, an electrical connection with excellent connection reliability can be obtained between the first electronic component and the second electronic component.

  The thickness of the bonding portion 36, that is, the thickness (average) of the bonding portion 36 in the bonded body 60 of the semiconductor interposer 31 and the semiconductor chip 33 is not particularly limited, but is preferably about 3 to 300 μm. More preferably, it is about ~ 150 μm. Thus, by reducing the separation distance between the interposer 31 and the semiconductor chip 33, the overall thickness of the electronic component 10 can be reduced, and further the weight of the electronic component 10 can be reduced.

  The solder bonding method and the electronic component of the present invention have been described above, but the present invention is not limited to these.

Example 1
1. Preparation of resin varnish for resin layer containing thermosetting resin 15.0 parts by weight of phenol novolac resin (manufactured by Sumitomo Bakelite, PR55617) and liquid bisphenol A type epoxy resin (manufactured by Dainippon Ink & Chemicals, EPICLON-840S) ) 45.0 parts by weight, 15.0 parts by weight of phenol phthaline (manufactured by Tokyo Chemical Industry Co., Ltd.) which is a flux active compound, and bisphenol A type phenoxy resin (manufactured by Toto Kasei Co., Ltd., YP-50) as a film-forming resin 24.4 parts by weight, 0.1 part by weight of 2-phenyl-4-methylimidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., 2P4MZ) as a curing accelerator, and β- (3,4 epoxy cyclohexyl) ethyltri as a silane coupling agent 0.5 parts by weight of methoxysilane (KBE-303, manufactured by Shin-Etsu Chemical Co., Ltd.) and methyl ethyl keto Dissolved in, to prepare a resin concentration of 50% resin varnish.

2. Preparation of resin layer (film) containing thermosetting resin The obtained resin varnish was applied to a base polyester film (manufactured by Toray Industries, Inc., Lumirror) to a thickness of 50 μm, and 100 ° C. for 5 minutes. It dried and obtained the resin layer (film) containing a 25-micrometer-thick thermosetting resin.

3. Manufacture of electronic components <First step>
A resin layer (film) containing the obtained thermosetting resin is vacuumed on a semiconductor chip (size 10 mm × 10 mm, thickness 0.3 mm) having solder bumps (Sn96.5 / Ag3.5, melting point 221 ° C.). A semiconductor chip with a resin layer containing a thermosetting resin was obtained by laminating with a roll laminator under conditions of 100 ° C., 0.8 MPa, and 30 seconds.
<Second step>
Next, a circuit board having a Ni / Au pad is prepared, alignment is performed so that the solder bump of the semiconductor chip with a resin layer containing a thermosetting resin and the Ni / Au pad overlap, and a flip chip bonder (Wakuya) Kogyo Co., Ltd. DP-200) at 120 ° C., 0.05
Solder bumps and Ni / Au pads were brought into contact with each other under the conditions of MPa and 7 seconds to obtain a circuit board / semiconductor chip laminate.
<Third step>
The obtained circuit board / semiconductor chip laminate was pressurized and heated under the conditions of 230 ° C., 0.7 MPa, and 3 seconds in an air atmosphere using a flip chip bonder (DP-200 manufactured by Kasuya Kogyo Co., Ltd.). Then, the solder bump and the Ni / Au pad were melt-bonded, and the pressure was released when the temperature of the bonded portion reached 210 ° C.
<4th process>
A circuit board / semiconductor chip laminate in which solder bumps and Ni / Au pads are bonded is put into a commercially available heating oven, and a heat history is added at 180 ° C. for 60 minutes to contain a thermosetting resin. Was cured to produce an electronic component.

(Example 2)
In the third step of Example 1, a flip chip bonder (DP manufactured by Kasuya Kogyo Co., Ltd.)
-200) at 230 ° C., 0.7 MPa for 3 seconds, and instead of melting and joining the solder bumps and the Ni / Au pads, a commercially available pulse heat type thermocompression machine is used. , 1.6 MPa, heated and heated under the conditions of 60 seconds, the solder bump and the Ni / Au pad were melt bonded, and the pressure was released when the temperature of the bonded portion reached 50 ° C. An electronic component was manufactured in the same manner as in Example 1.

(Example 3)
In the third step of Example 1, a flip chip bonder (DP manufactured by Kasuya Kogyo Co., Ltd.)
-200) in place of 230 ° C., 0.7 MPa, and 3 seconds under pressure and heating to melt-bond the solder bumps and Ni / Au pads. Place the block, pressurize it under the condition of 0.05 MPa, and then pass the circuit board / semiconductor chip stack with the SUS block through a commercially available solder reflow device under a nitrogen atmosphere to obtain a thermal history of 230 ° C. or higher. An electronic component is manufactured in the same manner as in Example 1 except that the solder bump and the Ni / Au pad are melted and joined for 60 seconds, and the SUS block is removed when the temperature of the joint reaches 100 ° C. did.

Example 4
In the third step of Example 3, an electronic component was manufactured in the same manner as in Example 3 except that the SUS block was changed to the glass block.

(Example 5)
In the third step of Example 3, an electronic component was manufactured in the same manner as Example 3 except that the SUS block was changed to the silicon block.

(Example 6)
In the third step of Example 3, instead of passing through a commercially available solder reflow device, the solder bumps and Ni / Au pads were melt-bonded in a commercially available heating oven, as in Example 3. Electronic components were manufactured.

(Example 7)
In the third step of Example 3, instead of passing through a commercially available solder reflow device, 230 ° C., 60 ° An electronic component was manufactured in the same manner as in Example 3 except that the solder bump and the Ni / Au pad were melt-bonded by heating for 2 seconds.

(Example 8)
Instead of curing the resin layer containing the thermosetting resin by adding a heat history at 180 ° C. for 60 minutes in the fourth step of Example 1, a commercially available heating oven is used. In a pressure-compatible oven, pressurize the interior of the oven with nitrogen gas at a pressure of 0.5 MPa, apply a heat history at 180 ° C. for 60 minutes to cure the resin layer containing the thermosetting resin, and manufacture electronic components did.

Example 9
Instead of curing the resin layer containing the thermosetting resin by adding a heat history at 180 ° C. for 60 minutes in the fourth step of Example 2, a commercially available heating oven is used. In a pressure-compatible oven, pressurize the interior of the oven with nitrogen gas at a pressure of 0.5 MPa, apply a heat history at 180 ° C. for 60 minutes to cure the resin layer containing the thermosetting resin, and manufacture electronic components did.

(Example 10)
Example 8 is the same as Example 8 except that, in the second step of Example 8, a circuit board having solder bumps (Sn 96.5 / Ag3.5, melting point 221 ° C.) was used instead of the circuit board having Ni / Au pads. The electronic parts were manufactured in the same way.

(Example 11)
In the first step of Example 1, a semiconductor chip having solder bumps (Sn63 / Pb37, melting point 183 ° C.) is used instead of the semiconductor chips having solder bumps (Sn 96.5 / Ag 3.5, melting point 221 ° C.). In the third step, the bonding temperature is changed from 230 ° C. to 195 ° C., the temperature for releasing the pressure is changed from 210 ° C. to 170 ° C., and in the fourth step, a commercially available heating oven is used. Instead of curing a resin layer containing a thermosetting resin at 180 ° C. for 60 minutes, a commercially available pressurization type oven presses the interior of the oven at 0.5 MPa with nitrogen gas at 165 ° C. for 120 minutes. An electronic component was manufactured in the same manner as in Example 1 except that the resin was cured in the same manner as in Example 1.

(Example 12)
In the first step of Example 1, a semiconductor chip having solder bumps (Sn89 / Zn8 / Bi3, melting point 195 ° C.) instead of a semiconductor chip having solder bumps (Sn96.5 / Ag3.5, melting point 221 ° C.) In the third step, the bonding temperature is changed from 230 ° C. to 210 ° C., the temperature for releasing the pressure is changed from 210 ° C. to 180 ° C., and in the fourth step, a commercially available heating mold is used. Instead of curing the resin layer containing a thermosetting resin at 180 ° C. for 60 minutes in an oven, a commercially available press-compatible oven is used, while the inside of the oven is pressurized with nitrogen gas at 0.5 MPa, 180 ° C., An electronic component was manufactured in the same manner as in Example 1 except that it was cured in 60 minutes.

(Comparative Example 1)
In the third step of Example 1, instead of bonding with a flip chip bonder, the circuit board / semiconductor chip laminate is heated in a commercially available heating oven at 230 ° C. for 60 seconds in a nitrogen atmosphere, thereby solder bumps. Example 1 except that Ni / Au pad was melt bonded
The electronic parts were manufactured in the same way.

(Comparative Example 2)
In the third step of Example 1, an electronic component was manufactured in the same manner as in Example 1 except that the temperature at which the pressure was released was changed from 210 ° C to 230 ° C.

4). Calculation of Thermal Expansion Coefficient of Solder The thermal expansion coefficient at or above the melting point of the solder was calculated using a metal material property value calculation software database JMatPro (manufactured by Sente Software).
The thermal expansion coefficient below the melting point of the solder was calculated by a thermomechanical characteristic analyzer (mode: compression, load: 50 N, temperature increase rate: 5 ° C./min).

5. Evaluation of electronic components <Cavities and voids>
The obtained electronic component was cut and the cross section of the cured product was polished. Next, 10 portions were arbitrarily selected from the portions surrounded by the semiconductor chip, the circuit board, and two adjacent solder joints, and the presence or absence of microvoids in each portion was observed with a metal microscope. Each code is as follows.
◎: When no cavities and voids are observed ◯: When there are cavities and voids but the size is 5 μm or less ×: When there are cavities and voids and the size is 5 μm or more <Conduction reliability Sex>
About the obtained electronic component, the connection resistance of two adjacent solder joints arbitrarily selected was measured with a digital multimeter. Next, 9 other points and two adjacent solder joints were arbitrarily selected. Similarly, the connection resistance was measured, and a total of 10 conductive connections were measured.
Each code is as follows.
○: When conduction is obtained at all 10 points ×: When conduction is defective even at 1 point

As is clear from Table 1, in the electronic components obtained in Examples 1 to 12, cavities and voids were not observed in the sealing portion.
Moreover, the electronic component of Examples 1-12 was excellent also in conduction | electrical_connection reliability. This suggested that the solder bump and the Ni / Au pad were surely melt-bonded.

1, 11, 21, 31 Interposer (substrate)
2, 22, 32 Metal electrode 3, 13, 23, 33 Semiconductor chip 4, 12, 14, 24, 32, 34 Solder electrode (solder bump)
5, 25, 35 Resin layer 10, 20 Electronic component 15, 26, 36 Bonded portion 27, 37 Sealed portion 30, 50 Laminated body 40, 60 Bonded body

Claims (11)

A solder joining method for joining a first electronic component having a connecting metal electrode and a second electronic component having a connecting solder electrode,
A first step of forming a resin layer containing a thermosetting resin on at least one of the solder joint surfaces of the first electronic component and the second electronic component;
After forming the resin layer containing the thermosetting resin, the connection metal electrode of the first electronic component and the connection solder electrode of the second electronic component are aligned so as to face each other, and the connection A second step of bringing the connecting metal electrode into contact with the connecting solder electrode by heating and pressing at a temperature lower than the melting point of the solder of the solder electrode;
The first electronic component and the second electronic component brought into contact with each other are pressurized by a pressurizing device having a plate-like body, and heated at a temperature higher than the melting point of the connecting solder electrode while holding the pressurization, A third step of melting and bonding the solder of the connecting solder electrode to the connecting metal electrode, and then releasing the pressure after cooling to a temperature lower than the melting point of the solder before the melting and bonding ;
A fourth step of curing the resin layer containing the thermosetting resin by heating to a temperature lower than the melting point of the solder before the fusion bonding ;
Are performed in this order, and the manufacturing method of the electronic component characterized by the above-mentioned. A solder joining method for joining a first electronic component having a connecting metal electrode and a second electronic component having a connecting solder electrode,
A first step of forming a resin layer containing a thermosetting resin on at least one of the solder joint surfaces of the first electronic component and the second electronic component;
After forming the resin layer containing the thermosetting resin, the connection metal electrode of the first electronic component and the connection solder electrode of the second electronic component are aligned so as to face each other, and the connection A second step of bringing the connecting metal electrode into contact with the connecting solder electrode by heating and pressing at a temperature at which the thermal expansion coefficient of the solder of the solder electrode is 30 × 10 ⁻⁶ / ° C. or less. When,
The first electronic component and the second electronic component brought into contact with each other are pressed by a pressing device having a plate-like body, and the thermal expansion coefficient of the solder of the connecting solder electrode is 30 × in a state where the pressing is held. It is heated to a temperature higher than 10 ⁻⁶ / ° C., the solder of the connecting solder electrode is melt bonded to the connecting metal electrode, and then the thermal expansion coefficient of the solder before the melting bonding is 30 × 10 ^−6. A third step of releasing the pressure after cooling to a temperature of less than / ° C;
A fourth step of curing the resin layer containing the thermosetting resin by heating to a temperature at which the thermal expansion coefficient of the solder before the melt bonding is 30 × 10 ⁻⁶ / ° C. or less;
Are performed in this order, and the manufacturing method of the electronic component characterized by the above-mentioned. A solder joining method for joining a first electronic component having a connecting metal electrode and a second electronic component having a connecting solder electrode,
A first step of forming a resin layer containing a thermosetting resin on at least one of the solder joint surfaces of the first electronic component and the second electronic component;
After forming the resin layer containing the thermosetting resin, the connection metal electrode of the first electronic component and the connection solder electrode of the second electronic component are aligned so as to face each other, and is 190 ° C. or less. A second step of bringing the connecting metal electrode into contact with the connecting solder electrode by heating and pressurizing at a temperature of
The contacted first electronic component and second electronic component are pressed by a pressurizing device having a plate-like body, and heated to a temperature higher than 210 ° C. while holding the pressurizing, and the connecting solder A third step in which the solder of the electrode is melt bonded to the connecting metal electrode, and then the pressure is released after cooling to a temperature of 210 ° C. or lower;
A fourth step of curing the resin layer containing the thermosetting resin by heating to a temperature of 210 ° C. or lower;
Are performed in this order. A solder joining method for joining a first electronic component having a connecting solder electrode and a second electronic component having a connecting solder electrode,
A first step of forming a resin layer containing a thermosetting resin on at least one of the solder joint surfaces of the first electronic component and the second electronic component;
After forming the resin layer containing the thermosetting resin, the connection solder electrode of the first electronic component and the connection solder electrode of the second electronic component are aligned so as to face each other, and A second soldering electrode for contacting the first electronic component and the second electronic component is brought into contact with each other by heating and pressing at a temperature lower than the melting point of the solder of the solder electrode for connecting the electronic component and the second electronic component. And the process of
The first electronic component and the second electronic component brought into contact with each other are pressed by a pressurizing device having a plate-like body, and at least one of the first electronic component and the second electronic component is connected in a state where the pressurization is held. After heating at a temperature higher than the melting point of the solder of the solder electrode for soldering, the solder electrodes of the first electronic component and the second electronic component are melt bonded to each other, and then cooled to a temperature lower than the melting point of the solder before the melting bonding A third step of releasing pressure,
A fourth step of curing the resin layer containing the thermosetting resin by heating to a temperature lower than the melting point of the solder before the fusion bonding ;
Are performed in this order, and the manufacturing method of the electronic component characterized by the above-mentioned. A solder joining method for joining a first electronic component having a connecting solder electrode and a second electronic component having a connecting solder electrode,
A first step of forming a resin layer containing a thermosetting resin on at least one of the solder joint surfaces of the first electronic component and the second electronic component;
After forming the resin layer containing the thermosetting resin, the connection solder electrode of the first electronic component and the connection solder electrode of the second electronic component are aligned so as to face each other, and For connecting the first electronic component and the second electronic component by heating and pressurizing at a temperature at which the thermal expansion coefficient of the solder of the solder electrode of the electronic component and the second electronic component is 30 × 10 ⁻⁶ / ° C. or less. A second step of bringing the solder electrodes into contact with each other;
The first electronic component and the second electronic component brought into contact with each other are pressed by a pressurizing device having a plate-like body, and at least one solder of the first electronic component and the second electronic component is held in the state where the pressurization is held. Heating is performed at a temperature at which the coefficient of thermal expansion of the solder of the electrode is greater than 30 × 10 ⁻⁶ / ° C., the solder electrodes of the first electronic component and the second electronic component are melt-bonded, and then the solder before the melt-bonding A third step of releasing the pressure after cooling to a temperature at which the coefficient of thermal expansion is 30 × 10 ⁻⁶ / ° C. or lower;
A fourth step of curing the resin layer containing the thermosetting resin by heating to a temperature at which the coefficient of thermal expansion of the solder before fusion bonding is 30 × 10 ⁻⁶ / ° C. or less;
Are performed in this order, and the manufacturing method of the electronic component characterized by the above-mentioned. A solder joining method for joining a first electronic component having a connecting solder electrode and a second electronic component having a connecting solder electrode,
A first step of forming a resin layer containing a thermosetting resin on at least one of the solder joint surfaces of the first electronic component and the second electronic component;
After forming the resin layer containing the thermosetting resin, the connection solder electrode of the first electronic component and the connection solder electrode of the second electronic component are aligned so as to face each other, and is 190 ° C. or less. A second step of contacting the solder electrodes for connection of the first electronic component and the second electronic component by heating and pressurizing at a temperature of
The first electronic component and the second electronic component brought into contact with each other are pressurized by a pressurizing device having a plate-like body, and heated at a temperature higher than 210 ° C. while maintaining the pressurization. A third step of melting and bonding the solder electrodes of the component and the second electronic component, and then releasing the pressure after cooling to a temperature of 210 ° C. or lower;
A fourth step of curing the resin layer containing the thermosetting resin by heating to a temperature of 210 ° C. or lower;
Are performed in this order, and the manufacturing method of the electronic component characterized by the above-mentioned.   The electron according to any one of claims 1 to 3, wherein in the third step, the solder of the connection solder electrode is melt-bonded to the connection metal electrode in an atmosphere pressurized by a pressurized fluid. A manufacturing method for parts.   The method of manufacturing an electronic component according to any one of claims 4 to 6, wherein in the third step, the connecting solder electrodes are melt-bonded in an atmosphere pressurized by a pressurized fluid.   The method of manufacturing an electronic component according to claim 1, wherein the fourth step is to cure the resin layer containing the thermosetting resin in an atmosphere pressurized by a pressurized fluid. .   The method for manufacturing an electronic component according to claim 1, wherein the resin layer containing the thermosetting resin contains a flux active compound.   The electronic component produced using the manufacturing method of the electronic component in any one of Claims 1 thru | or 10.

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