JP2011171258A - Conductive connection sheet, method of connecting between terminals, method of forming connection terminal, semiconductor device, and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a conductive connection sheet that can electrically connect opposite terminals without generating a leakage current between the adjacent terminals, to provide a method of connecting terminals using the conductive connection sheet, a method of forming a connection terminal, and a reliable semiconductor device, and also to provide an electronic apparatus. <P>SOLUTION: The conductive connection sheet 1 includes a laminate including: metal particle-containing layers 11, 13 containing metal particles formed of metal material having a low melting point, and a resin component; and a metal layer 12 formed of metal material having a low melting point. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a conductive connection sheet, a connection method between terminals, a method for forming a connection terminal, a semiconductor device, and an electronic apparatus.

  In recent years, along with the demand for higher functionality and miniaturization of electronic equipment, the pitch between connection terminals in electronic materials is becoming increasingly narrow, and the connection between terminals in a fine wiring circuit is also becoming more sophisticated.

  As the inter-terminal connection method, for example, a flip chip connection technique in which a large number of terminals are collectively connected using an anisotropic conductive adhesive or an anisotropic conductive film when an IC chip is electrically connected to a circuit board. It has been known. Such an anisotropic conductive adhesive or anisotropic conductive film is a film or paste in which conductive particles are dispersed in an adhesive mainly composed of a thermosetting resin, and the electronic member to be connected thereto By disposing them in between and thermocompression bonding, a large number of opposing terminals can be connected together, while insulation between adjacent terminals can be ensured by the resin in the adhesive.

  However, in the anisotropic conductive adhesive or anisotropic conductive film, it is difficult to control the aggregation of the conductive particles, and the conductive particles and the terminals or the conductive particles face each other without sufficiently contacting each other. Some of the terminals do not conduct, or conductive particles remain in the resin (insulating region) other than between the opposing terminals (conducting region), and insulation between adjacent terminals is not sufficiently secured. There was a problem. For this reason, it was difficult to cope with further narrowing of the pitch between terminals.

  On the other hand, when manufacturing a connection terminal on an electronic member, conventionally, a solder paste is printed on a substrate provided with a metal pad, and the solder paste is heated and melted using a solder reflow apparatus or the like. However, in this method, when the connection terminals have a narrow pitch, the cost of the mask used when printing the solder paste increases, and if the connection terminals are small, printing may not be possible.

  Also, in the method in which solder balls are mounted on the connection terminals and the solder balls are heated and melted using a solder reflow device or the like, if the connection terminals are small, the manufacturing cost of the solder balls increases, and the solder balls having a small diameter In some cases, it was technically difficult to fabricate.

JP-A 61-276873 JP 2004-260131 A

  Accordingly, an object of the present invention is to provide a conductive connection sheet that can electrically connect opposing terminals without causing leakage current between adjacent terminals, and a method for connecting terminals using such a conductive connection sheet. Another object is to provide a method for forming a connection terminal, a highly reliable semiconductor device, and an electronic device.

Such an object is achieved by the present invention described in the following (1) to (18).
(1) It is comprised by the laminated body provided with the metal particle and the metal particle content layer containing a resin component and the metal particle comprised with a low melting metal material, and the metal layer comprised with the said low melting metal material Conductive connection sheet.

  (2) The conductive connection sheet according to (1), wherein the metal particle-containing layer includes a resin composition containing the resin component and a compound having a flux function, and the metal particles.

  (3) The conductive connection sheet according to (2), wherein the compound having the flux function includes a compound having at least one of a phenolic hydroxyl group and a carboxyl group.

(4) The conductive connection sheet according to (2) or (3), wherein the compound having the flux function includes a compound represented by the following general formula (1).
_{HOOC- (CH 2) n-COOH} ····· (1)
(In Formula (1), n is an integer of 1-20.)

［式中、Ｒ¹〜Ｒ⁵は、それぞれ独立して、１価の有機基であり、Ｒ¹〜Ｒ⁵の少なくとも一つは水酸基である。］

［式中、Ｒ⁶〜Ｒ²⁰は、それぞれ独立して、１価の有機基であり、Ｒ⁶〜Ｒ²⁰の少なくとも一つは水酸基またはカルボキシル基である。］ (5) The conductive connection sheet according to (2) or (3), wherein the compound having the flux function contains at least one of the compounds represented by the following general formula (2) and the following general formula (3). .

[Wherein, R ^{1 to} R ⁵ are each independently a monovalent organic group, and at least one of R ^{1 to} R ⁵ is a hydroxyl group. ]

[Wherein, R ^{6 to} R ²⁰ are each independently a monovalent organic group, and at least one of R ^{6 to} R ²⁰ is a hydroxyl group or a carboxyl group. ]

  (6) In the said resin composition, content of the compound which has the said flux function is a conductive connection sheet in any one of said (2) thru | or (5) which is 1 to 50 weight%.

  (7) The metal particles include tin (Sn), lead (Pb), silver (Ag), bismuth (Bi), indium (In), zinc (Zn), nickel (Ni), antimony (Sb), iron ( (1) to (6) which is an alloy of at least two kinds of metals selected from the group consisting of Fe), aluminum (Al), gold (Au), germanium (Ge) and copper (Cu), or a simple substance of tin. The conductive connection sheet according to any one of the above.

  (8) The conductive connection sheet according to any one of (1) to (7), wherein the metal particles have a content of 1 to 70% by weight in the metal particle-containing layer.

  (9) The conductive connection sheet according to any one of (1) to (8), wherein the metal particles have an average particle diameter of 0.1 to 50 μm.

  (10) The metal layer includes tin (Sn), lead (Pb), silver (Ag), bismuth (Bi), indium (In), zinc (Zn), nickel (Ni), antimony (Sb), iron ( (1) to (9) which are an alloy of at least two kinds of metals selected from the group consisting of Fe), aluminum (Al), gold (Au), germanium (Ge) and copper (Cu), or a simple substance of tin. The conductive connection sheet according to any one of the above.

  (11) The laminate is composed of two metal particle-containing layers and one metal layer, and the metal particle-containing layer, the metal layer, and the metal particle-containing layer are laminated in this order. The conductive connection sheet according to any one of (1) to (10).

  (12) The conductive connection sheet according to any one of (1) to (11), wherein the laminate further includes a resin composition layer that does not include the metal particles and includes the resin component.

  (13) An arrangement step of arranging the conductive connection sheet according to any one of (1) to (12) between opposing terminals, and a curing temperature of the resin composition that is equal to or higher than a melting point of the metal material. A method for connecting terminals, comprising: a heating step of heating the conductive connection sheet at a temperature at which the resin composition is not completed; and a curing step of curing the resin composition.

  (14) An arrangement step of arranging the conductive connection sheet according to any one of (1) to (12) between opposing terminals, a melting point of the metal material or more, and the resin composition softening A method for connecting terminals, comprising: a heating step of heating the conductive connection sheet at a temperature to be solidified; and a solidification step of solidifying the resin composition.

  (15) An arrangement step of arranging the conductive connection sheet according to any one of (1) to (12) above on a base material having a terminal, the melting point of the metal material, and the resin composition. And a heating step of heating the conductive connection sheet at a temperature at which curing of the connection is not completed.

  (16) An arrangement step of arranging the conductive connection sheet according to any one of (1) to (12) above on a base material having terminals, a melting point of the metal material or more, and the resin composition And a heating step of heating the conductive connection sheet at a temperature at which softening occurs.

  (17) A semiconductor in which terminals facing each other are electrically connected via a connection portion formed using the conductive connection sheet according to any one of (1) to (12). apparatus.

  (18) Electrons characterized in that opposing terminals are electrically connected via a connection portion formed using the conductive connection sheet according to any one of (1) to (12) above. machine.

  Using the conductive connection sheet of the present invention, when applied to the formation of a connection portion that electrically connects the terminals, the heat-melted metal material is agglomerated between the terminals with more excellent selectivity. It is possible to form a sealing layer that is formed and is composed of a resin component around it and prevents the metal material from being mixed. As a result, insulation between adjacent terminals is ensured by the sealing layer, so that it is possible to reliably prevent a leak current from occurring between adjacent terminals.

  Furthermore, using a conductive connection sheet, when applied to the formation of a connection terminal provided correspondingly on the electrode, the metal material heated and melted is agglomerated on the electrode with better selectivity to form the connection terminal, The reinforcement layer which was comprised by the resin component and the mixture of the metal material was prevented in the circumference | surroundings can be formed. As a result, insulation between adjacent connection terminals is ensured by the reinforcing layer, so that leakage current can be reliably prevented from occurring between adjacent connection terminals.

It is a longitudinal section showing an example of a semiconductor device manufactured using the conductive connection sheet of the present invention. It is a longitudinal section showing an embodiment of a conductive connection sheet of the present invention. It is a top view which shows the other structural example of the metal layer with which the conductive connection sheet of this invention is provided. It is a longitudinal cross-sectional view for demonstrating the method to manufacture the connection part and sealing layer with which a semiconductor device is provided using the connection method between the terminals of this invention. It is a longitudinal cross-sectional view for demonstrating the method of forming a connection terminal corresponding to the terminal with which a semiconductor chip is provided using the formation method of the connection terminal of this invention. It is a longitudinal cross-sectional view which shows the other structural example of the electrically conductive connection sheet | seat of this invention.

  Hereinafter, a conductive connection sheet, a connection method between terminals, a connection terminal formation method, a semiconductor device, and an electronic apparatus according to the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

  First, prior to describing the conductive connection sheet of the present invention, a semiconductor device manufactured using the conductive connection sheet of the present invention will be described.

<Semiconductor device>
FIG. 1 is a longitudinal sectional view showing an example of a semiconductor device manufactured using the conductive connection sheet of the present invention. In the following description, the upper side in FIG. 1 is referred to as “upper” and the lower side is referred to as “lower”.

  A semiconductor device 10 shown in FIG. 1 includes a semiconductor chip (semiconductor element) 20, an interposer (substrate) 30 that supports the semiconductor chip 20, and a plurality of conductive bumps (terminals) 70.

  The interposer 30 is an insulating substrate and is made of various resin materials such as polyimide, epoxy, cyanate, bismaleimide triazine (BT resin). The plan view shape of the interposer 30 is usually a square such as a square or a rectangle.

  On the upper surface (one surface) of the interposer 30, for example, a terminal 41 made of a conductive metal material such as copper is provided in a predetermined shape.

  The interposer 30 is formed with a plurality of vias (through holes: through holes) (not shown) penetrating in the thickness direction.

  Each bump 70 has one end (upper end) electrically connected to a part of the terminal 41 via each via, and the other end (lower end) protruding from the lower surface (the other surface) of the interposer 30. Yes.

  A portion of the bump 70 protruding from the interposer 30 has a substantially spherical shape (Ball shape).

  The bumps 70 are mainly composed of a brazing material such as solder, silver brazing, copper brazing, or phosphor copper brazing.

  A terminal 41 is formed on the interposer 30. A terminal 21 included in the semiconductor chip 20 is electrically connected to the terminal 41 via a connection portion 81.

  In the present embodiment, as shown in FIG. 1, the terminal 21 is configured to protrude from the surface side formed on the semiconductor chip 20, and the terminal 41 is also configured to protrude from the interposer 30. ing.

  Further, a gap between the semiconductor chip 20 and the interposer 30 is filled with a sealing material made of various resin materials, and a sealing layer 80 is formed by a cured product of this sealing material. . The sealing layer 80 has a function of improving the bonding strength between the semiconductor chip 20 and the interposer 30, a function of maintaining insulation between the adjacent terminals 21 and 41, and intrusion of foreign matter or moisture into the gap. It has a function to prevent.

  In the semiconductor device 10 having such a configuration, the conductive connection sheet of the present invention is applied to the formation of the connection portion 81 and the sealing layer 80.

Hereinafter, the conductive connection sheet of the present invention will be described.
<Conductive connection sheet>
FIG. 2 is a longitudinal sectional view showing an embodiment of the conductive connection sheet of the present invention, and FIG. 3 is a plan view showing another configuration example of the metal layer provided in the conductive connection sheet of the present invention. In the following description, the upper side in FIG. 2 is referred to as “upper” and the lower side is referred to as “lower”.

  The conductive connection sheet of the present invention includes a laminate including a metal particle-containing layer containing a metal particle and a resin component composed of a low-melting-point metal material, and a metal layer composed of the low-melting-point metal material. It is characterized by being.

  Using such a conductive connection sheet, when applied to the formation of a connection portion that electrically connects the terminals, the heated and melted metal material is agglomerated between the terminals with more excellent selectivity. It is possible to form a sealing layer that is formed and is composed of a resin component around it and prevents the metal material from being mixed. As a result, insulation between adjacent terminals is ensured by the sealing layer, so that it is possible to reliably prevent a leak current from occurring between adjacent terminals.

  Furthermore, using a conductive connection sheet, when applied to the formation of a connection terminal provided correspondingly on the electrode, the metal material heated and melted is agglomerated on the electrode with better selectivity to form the connection terminal, The reinforcement layer which was comprised by the resin component and the mixture of the metal material was prevented in the circumference | surroundings can be formed. As a result, insulation between adjacent connection terminals is ensured by the reinforcing layer, so that leakage current can be reliably prevented from occurring between adjacent connection terminals.

  In the present embodiment, as shown in FIG. 2, in the conductive connection sheet, the first metal particle-containing layer 11, the metal layer 12, and the second metal particle-containing layer 13 are joined together in this order. A three-layer structure having a three-layer structure, that is, a three-layer structure in which the metal layer 12 is positioned so as to be bonded to each other between the first metal particle-containing layer 11 and the second metal particle-containing layer 13. It is comprised with the laminated body which makes | forms.

  In the conductive connection sheet 1 having such a configuration, the first metal particle-containing layer 11 and the second metal particle-containing layer 13 are composed of a resin composition containing a resin component and metal particles 40 made of a low-melting-point metal material. The metal layer 12 is made of a metal foil made of a low melting point metal material.

  Hereinafter, although each layer which comprises the conductive connection sheet 1 is demonstrated sequentially, about the 1st metal particle content layer 11 and the 2nd metal particle content layer 13, both the resin composition containing a resin component and a low melting point are included. Since it is comprised with the metal particle 40 comprised with a metal material, the 1st metal particle content layer 11 is demonstrated to a representative. In the following description, the first metal particle-containing layer 11 and the second metal particle-containing layer 13 may be simply referred to as “metal particle-containing layer 11” and “metal particle-containing layer 13”.

<< metal layer 12 >>
The metal layer (metal foil layer) 12 is a layer composed of a metal foil composed of a low melting point metal material.

  The metal layer 12 melts when heated to the melting point or higher, and when the metal particle-containing layer 11 includes a compound having a flux function described later, the metal layer 12 includes a compound having a flux function included in the metal particle-containing layer 11. The oxide film formed on the surface of the metal layer 12 is reduced by the action, so that the wettability of the molten metal layer 12 is improved. Therefore, the metal layer 12 is selectively agglomerated together with the metal particles 40 between the terminals 21 and 41, and finally, the connection portion 81 is formed by these solidified products.

  Here, in the present invention, a low melting point metal material having a melting point of 330 ° C. or lower, preferably 300 ° C. or lower, more preferably 280 ° C. or lower, further preferably 260 ° C. or lower is appropriately selected. Thereby, in the connection between the terminals 21 and 41 in the semiconductor device 10, it is possible to accurately suppress or prevent the various members of the semiconductor device 10 from being damaged by the thermal history.

  Further, from the viewpoint of ensuring the heat resistance of the semiconductor device 10 after the connection portion 81 is formed, that is, after the connection between the terminals 21 and 41, the low melting point metal material has a melting point of 100 ° C. or higher, preferably 110 ° C. As described above, a material having a temperature of 120 ° C. or higher is appropriately selected.

  Note that the melting point of the low melting point metal material, that is, the metal layer 12, can be measured by a differential scanning calorimeter (DSC).

  Such a low-melting-point metal material has the above-described melting point, and further, as long as the oxide film formed on the surface of the metal layer 12 can be removed by the reducing action of the compound having a flux function. For example, tin (Sn), lead (Pb), silver (Ag), bismuth (Bi), indium (In), zinc (Zn), nickel (Ni), antimony (Sb), iron (Fe) , An alloy of at least two kinds of metals selected from the group consisting of aluminum (Al), gold (Au), germanium (Ge) and copper (Cu), or a simple substance of tin.

  Among these alloys, as a low melting point metal material, considering its melting temperature, mechanical properties, etc., an Sn—Pb alloy, an Sn—Bi alloy that is a lead-free solder, an Sn—Ag—Cu alloy It is preferably composed of an alloy containing Sn, such as an alloy, an Sn—In alloy, or an Sn—Ag alloy.

  When an Sn—Pb alloy is used as the low melting point metal material, the tin content is preferably 30% by weight or more and less than 100% by weight, and preferably 35% by weight or more and less than 100% by weight. More preferably, it is more preferably 40% by weight or more and less than 100% by weight. When lead-free solder is used, the content of tin is preferably 15% by weight or more and less than 100% by weight, more preferably 20% by weight or more and less than 100% by weight, and more preferably 25% by weight or more and 100% by weight. More preferably, it is less than% by weight.

  Specifically, for example, Sn-37Pb (melting point 183 ° C.) is used as an Sn—Pb alloy, and Sn-3.0Ag-0.5Cu (melting point 217 ° C.), Sn-3.5Ag is used as a lead-free solder. (Melting point 221 ° C), Sn-58Bi (melting point 139 ° C), Sn-9.0Zn (melting point 199 ° C), Sn-3.5Ag-0.5Bi-3.0In (melting point 193 ° C), Au-20Sn (melting point) 280 ° C.).

  The thickness of the metal layer 12 is not particularly limited, but is appropriately set according to the separation distance (gap) between the opposing terminals 21 and 41, the separation distance between the adjacent terminals 21 and 41, and the like.

  For example, as in this embodiment, in the connection between the terminals 21 and 41 in the semiconductor device 10, the thickness of the metal layer 12 is preferably 0.5 μm or more, more preferably 3 μm or more, and 5 μm. More preferably, it is 100 μm or less, more preferably 50 μm or less, and further preferably 20 μm or less. If the thickness of the metal layer 12 is less than the lower limit, unconnected terminals 21 and 41 may be generated due to a shortage of the metal material constituting the metal layer 12, and if the upper limit is exceeded, adjacent terminals due to surplus metal material. 21 and 41 may cause a bridge due to the connecting portion 81 to cause a short circuit.

  The method for producing the metal layer 12 is not particularly limited, and examples thereof include a method of producing from a lump such as an ingot by rolling, a method of forming the metal particle-containing layer 11 directly by vapor deposition, sputtering, plating, and the like.

  Further, in the conductive connection sheet 1, the amount of the low melting point metal material described above, that is, the occupation amount of the metal layer 12 is preferably 5% by weight or more in the conductive connection sheet 1, and is 20% by weight or more. More preferably, it is more preferably 30% by weight or more. Moreover, it is preferable that it is less than 100 weight%, It is more preferable that it is 80 weight% or less, It is further more preferable that it is 70 weight% or less.

  If the blending amount of the metal material in the conductive connection sheet 1, that is, the occupation amount of the metal layer 12 is less than the lower limit, there is a possibility that unconnected terminals 21 and 41 are generated due to a shortage of the metal material constituting the metal layer 12. If the upper limit is exceeded, a surplus of the metal material may cause bridging by the connecting portion 81 between the adjacent terminals 21 and 41, which may cause a short circuit.

  Alternatively, the occupation amount of the metal layer 12 may be defined by a volume ratio with respect to the conductive connection sheet 1. For example, the occupation amount (blending amount) of the metal layer 12 is preferably 1% by volume or more, more preferably 5% by volume or more, and more preferably 10% by volume or more with respect to the conductive connection sheet 1. Further preferred. Moreover, it is preferable that it is 90 volume% or less, It is more preferable that it is 80 volume% or less, It is further more preferable that it is 70 volume% or less. If the occupied amount of the metal layer 12 is less than the lower limit, there is a possibility that unconnected terminals 21 and 41 may be generated due to a shortage of the metal material constituting the metal layer 12, and if the upper limit is exceeded, the metal layer 12 is adjacent due to surplus metal material. There is a possibility that a bridge is formed between the terminals 21 and 41 by the connecting portion 81 and a short circuit occurs.

  In the present embodiment, as shown in FIG. 2, the case where the metal layer 12 is formed on the entire surface of the metal particle-containing layer 11 has been described. However, the present invention is not limited to this, and the metal layer 12 is a flat surface. The shape is not particularly limited as long as it is formed on at least a part of the metal particle-containing layer 11 in view.

  That is, when the metal layer is formed on a part of the metal particle-containing layer 11 in plan view, a certain shape may be repeatedly formed in a pattern, or the shape may be irregular. A regular shape and an irregular shape may be mixed.

  Specifically, as shown in FIG. 3, a metal layer 12 patterned in various shapes is formed on the metal particle-containing layer 11. For example, the shape of the metal layer 12 may be a dotted pattern (a), a striped pattern (b), a polka dot pattern (c), a rectangular pattern (d), a checkered pattern (e), a frame shape ( f), lattice pattern shape (g), multiple frame shape (h) and the like. These shapes are examples, and these shapes can be combined or deformed depending on the purpose and application.

  In addition, the method for producing the repetitive patterned metal layer is not particularly limited, but a method of punching a metal foil formed in a planar shape into a predetermined pattern, a method of forming a predetermined pattern by etching, etc. A method of forming by vapor deposition, sputtering, plating or the like by using a mask or the like can be mentioned.

<< Metal particle content layer 11 >>
In this embodiment, the metal particle-containing layer 11 includes a resin composition containing a resin component and metal particles 40 made of a low-melting-point metal material.

  In the present invention, the resin composition can be used in a liquid or solid form at room temperature. In the present specification, “liquid at room temperature” means a state that does not have a certain form at room temperature (about 25 ° C.), and includes a paste form.

(A) Resin composition If a resin composition contains a resin component, it will not specifically limit, A curable resin composition or a thermoplastic resin composition can be used.

  Examples of the curable resin composition include a curable resin composition that is cured by heating and a curable resin composition that is cured by irradiation with actinic radiation. Among these, a curable resin that is cured by heating. A composition is preferably used. The curable resin composition cured by heating is excellent in mechanical properties such as linear expansion coefficient and elastic modulus after curing.

In addition, the thermoplastic resin composition is not particularly limited as long as it is flexible enough to be molded by heating to a predetermined temperature.
(A) Curable resin composition A curable resin composition contains a curable resin component, and is melted and cured by heating.

  In addition to the curable resin component, the curable resin composition contains a compound having a flux function, a film-forming resin, a curing agent, a curing accelerator, a silane coupling agent, and the like as necessary. May be.

Hereinafter, various materials contained in the curable resin composition will be described in detail.
(I) Curable resin component Although a curable resin component will not be specifically limited if it melts and hardens | cures by heating, Usually, what can be used as an adhesive agent component for semiconductor device manufacture is used.

  Such a curable resin component is not particularly limited. For example, epoxy resin, phenoxy resin, silicone resin, oxetane resin, phenol resin, (meth) acrylate resin, polyester resin (unsaturated polyester resin), diallyl phthalate resin , Maleimide resin, polyimide resin (polyimide precursor resin), bismaleimide-triazine resin and the like. In particular, the use of a thermosetting resin containing at least one selected from the group consisting of epoxy resins, (meth) acrylate resins, phenoxy resins, polyester resins, polyimide resins, silicone resins, maleimide resins, and bismaleimide-triazine resins. preferable. Among these, an epoxy resin is preferable from the viewpoint of excellent curability and storage stability, heat resistance, moisture resistance, and chemical resistance of a cured product. In addition, these curable resin components may be used individually by 1 type, or may use 2 or more types together.

  The epoxy resin is not particularly limited, and any epoxy resin that is liquid at room temperature and solid at room temperature can be used. It is also possible to use an epoxy resin that is liquid at room temperature and an epoxy resin that is solid at room temperature. When the curable resin composition is liquid, it is preferable to use an epoxy resin that is liquid at room temperature. When the curable resin composition is solid, both liquid and solid epoxy resins should be used. Furthermore, it is preferable that the curable resin composition contains a film-forming resin component.

  Although it does not specifically limit as a liquid epoxy resin at room temperature (25 degreeC), A bisphenol A type epoxy resin, a bisphenol F type epoxy resin, etc. are mentioned, Among these, it can use combining 1 type or 2 types. .

  The epoxy equivalent of the epoxy resin that is liquid at room temperature is preferably 150 to 300 g / eq, more preferably 160 to 250 g / eq, and particularly preferably 170 to 220 g / eq. When the epoxy equivalent is less than the lower limit, depending on the type of epoxy resin used, the shrinkage of the cured product tends to increase, and the semiconductor device 10 and the electronic device including the semiconductor device 10 may be warped. Moreover, when it exceeds the said upper limit, when it is set as the structure which uses a film-forming resin component together with a curable resin composition, it may show the tendency for the reactivity with a film-forming resin component, especially a polyimide resin to fall. .

  Further, the epoxy resin solid at room temperature (25 ° C.) is not particularly limited, but bisphenol A type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, glycidylamine type epoxy resin. , A glycidyl ester type epoxy resin, a trifunctional epoxy resin, a tetrafunctional epoxy resin, and the like. Among these, one kind or two or more kinds can be used in combination. Among these, solid trifunctional epoxy resins, cresol novolac type epoxy resins, and the like are preferably used.

  In addition, 150-3000 g / eq is preferable, as for the epoxy equivalent of a solid epoxy resin at room temperature, 160-2500 g / eq is more preferable, and 170-2000 g / eq is especially preferable.

  The softening point of the epoxy resin that is solid at room temperature is preferably about 40 to 120 ° C, more preferably about 50 to 110 ° C, and particularly preferably about 60 to 100 ° C. When the softening point is within the above range, tackiness of the curable resin composition can be suppressed, and the softening point can be easily handled.

  Moreover, in the curable resin composition, the blending amount of the curable resin component described above can be appropriately set according to the form of the curable resin composition to be used.

  For example, in the case of a liquid curable resin composition, the blending amount of the curable resin component is preferably 10% by weight or more, more preferably 15% by weight or more in the curable resin composition. It is preferably 20% by weight or more, more preferably 25% by weight or more, still more preferably 30% by weight or more, and particularly preferably 35% by weight or more. Further, it is preferably less than 100% by weight, more preferably 95% by weight or less, further preferably 90% by weight or less, still more preferably 75% by weight or less, and 65% by weight or less. Is still more preferable, and it is especially preferable that it is 55 weight% or less.

  In the case of a solid curable resin composition, the amount of the curable resin component in the curable resin composition is preferably 5% by weight or more, and preferably 10% by weight or more. More preferably, it is more preferably 15% by weight or more, and particularly preferably 20% by weight or more. Further, it is preferably 90% by weight or less, more preferably 85% by weight or less, still more preferably 80% by weight or less, still more preferably 75% by weight or less, and 65% by weight or less. It is still more preferable that it is 55% by weight or less.

  When the blending amount of the curable resin component in the curable resin composition is within the above range, the electrical connection strength and the mechanical adhesive strength between the terminals 21 and 41 can be sufficiently secured.

(Ii) Film-forming resin component As described above, when a solid resin is used as the curable resin composition, in addition to the curable resin component, the film-forming resin is further included in the curable resin composition. A constitution containing a resin component is preferred.

  Such a film-forming resin component is not particularly limited as long as it is soluble in an organic solvent and has a film-forming property (film-forming property) alone, and is not limited to a thermoplastic resin or a thermosetting resin. Any of the resins can be used, or a combination of these can be used.

  Specifically, the film-forming resin component is not particularly limited. For example, (meth) acrylic resin, phenoxy resin, polyester resin, polyurethane resin, polyimide resin, polyamideimide resin, siloxane-modified polyimide resin, polybutadiene resin , Polypropylene resin, styrene-butadiene-styrene copolymer, styrene-ethylene-butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, Examples include acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, polyvinyl acetate, nylon, and the like. In combination it can be used. Among these, (meth) acrylic resins, phenoxy resins, polyester resins, polyamide resins and polyimide resins are preferable.

  In this specification, “(meth) acrylic resin” refers to a polymer of (meth) acrylic acid and its derivatives, or a co-polymerization of (meth) acrylic acid and its derivatives and other monomers. Means coalescence. Here, the expression “(meth) acrylic acid” or the like means “acrylic acid or methacrylic acid” or the like.

  The (meth) acrylic resin is not particularly limited. For example, polyacrylic acid such as polyacrylic acid, polymethacrylic acid, polymethyl acrylate, polyethyl acrylate, polybutyl acrylate, and polyacrylic acid-2-ethylhexyl. Acid ester, polymethyl methacrylate, polyethyl methacrylate, polymethacrylate such as polybutyl methacrylate, polyacrylonitrile, polymethacrylonitrile, polyacrylamide, butyl acrylate-ethyl acrylate-acrylonitrile copolymer, acrylonitrile- Butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, acrylonitrile-styrene copolymer, methyl methacrylate-styrene copolymer, methacryl Methyl-acrylonitrile copolymer, methyl methacrylate-α-methylstyrene copolymer, butyl acrylate-ethyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate-methacrylic acid copolymer, butyl acrylate-ethyl acrylate-acrylonitrile 2-hydroxyethyl methacrylate-acrylic acid copolymer, butyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate copolymer, butyl acrylate-acrylonitrile-acrylic acid copolymer, butyl acrylate-ethyl acrylate-acrylonitrile copolymer Examples thereof include a polymer and an ethyl acrylate-acrylonitrile-N, N-dimethylacrylamide copolymer, and one or more of these can be used in combination. Of these, butyl acrylate-ethyl acrylate-acrylonitrile copolymer and ethyl acrylate-acrylonitrile-N, N-dimethylacrylamide are preferable.

  Further, the skeleton of the phenoxy resin is not particularly limited, and examples thereof include bisphenol A type, bisphenol F type, and biphenyl type.

  The polyimide resin is not particularly limited as long as it has an imide bond in the repeating unit. For example, the polyimide resin is obtained by reacting diamine and acid dianhydride and heating and dehydrating and ring-closing the resulting polyamic acid. Can be mentioned.

  Examples of the diamine include, but are not limited to, aromatics such as 3,3′-dimethyl-4,4′diaminodiphenyl, 4,6-dimethyl-m-phenylenediamine, and 2,5-dimethyl-p-phenylenediamine. Examples include diamines and siloxane diamines such as 1,3-bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane, and one or more of these can be used in combination. .

  Examples of the acid dianhydride include 3,3,4,4′-biphenyltetracarboxylic acid, pyromellitic dianhydride, 4,4′-oxydiphthalic dianhydride, and the like. One kind or a combination of two or more kinds can be used.

  The polyimide resin may be either soluble or insoluble in the solvent, but it is easy to varnish when mixed with other components (curable resin component), and is a solvent because it is easy to handle. Soluble ones are preferred. In particular, a siloxane-modified polyimide resin is preferably used because it can be dissolved in various organic solvents.

  The weight average molecular weight of the film-forming resin is not particularly limited, but is preferably about 8,000 to 1,000,000, more preferably about 8,500 to 950,000, and 9,000 to More preferably, it is about 900,000. When the weight average molecular weight of the film-forming resin is in the above range, the film-forming property can be improved, and the fluidity of the metal particle-containing layer 11 before curing can be suppressed.

  In addition, the weight average molecular weight of film-forming resin can be measured by GPC (gel permeation chromatography), for example.

  Further, as the film-forming resin component, a commercial product of this can be used, and further, a plasticizer, a stabilizer, an inorganic filler, an antioxidant, an antistatic agent, and the like as long as the effects of the present invention are not impaired. What mix | blended various additives, such as a pigment, can also be used.

  Moreover, in the curable resin composition, the blending amount of the film-forming resin component described above can be appropriately set according to the form of the curable resin composition to be used.

  For example, in the case of a solid curable resin composition, the blending amount of the film-forming resin component is preferably 5% by weight or more and preferably 10% by weight or more in the curable resin composition. Is more preferable, and it is further more preferable that it is 15 weight% or more. Further, it is preferably 50% by weight or less, more preferably 45% by weight or less, and further preferably 40% by weight or less. When the blending amount of the film-forming resin component is within the above range, the fluidity of the curable resin composition before melting can be suppressed, and the metal particle-containing layer (conductive connection material) 11 can be easily handled. It becomes.

(Iii) Compound having flux function As described above, it is preferable that the curable resin composition further includes a flux function in addition to the curable resin component. The compound having a flux function has an action of reducing the surface oxide films formed on the terminals 21 and 41, the metal particles 40 and the metal layer 12. Therefore, if such a compound is contained in the curable resin composition, as will be described in detail in a method for forming a connection portion and a sealing layer, which will be described later, the terminals 21, 41, the metal particles 40, and the metal Even if an oxide film is formed on the surface of the layer 12, the oxide film can be reliably removed by the action of this compound. As a result, the molten metal layer 12 and the metal particles 40 are aggregated between the terminals 21 and 41 with higher selectivity.

  Although it does not specifically limit as a compound which has such a flux function, For example, the compound which has a phenolic hydroxyl group and / or a carboxyl group is used preferably.

  Examples of the compound having a phenolic hydroxyl group include phenol, o-cresol, 2,6-xylenol, p-cresol, m-cresol, o-ethylphenol, 2,4-xylenol, 2,5-xylenol, m- Ethylphenol, 2,3-xylenol, meditol, 3,5-xylenol, p-tert-butylphenol, catechol, p-tert-amylphenol, resorcinol, p-octylphenol, p-phenylphenol, bisphenol F, bisphenol AF, biphenol Monomers containing phenolic hydroxyl groups such as diallyl bisphenol F, diallyl bisphenol A, trisphenol, tetrakisphenol, phenol novolac resins, o-cresol novolac resins, bisphenols Lumpur F novolak resins, resins containing phenolic manufactured hydroxyl group, such as bisphenol A novolac resins. Can be used singly or in combination of two or more of them.

  Examples of the compound having a carboxyl group include aliphatic acid anhydrides, alicyclic acid anhydrides, aromatic acid anhydrides, aliphatic carboxylic acids, and aromatic carboxylic acids. Examples of the aliphatic acid anhydride include succinic anhydride, polyadipic acid anhydride, polyazeline acid anhydride, polysebacic acid anhydride, and the like. Examples of the alicyclic acid anhydride include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylhymic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, methylcyclohexene dicarboxylic acid. An anhydride etc. are mentioned. Examples of the aromatic acid anhydride include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic acid anhydride, ethylene glycol bistrimellitate, glycerol trislimitate, etc. Species or a combination of two or more can be used.

The aliphatic carboxylic acid is not particularly limited, for example, formic acid, acetic acid, propionic acid, butyric acid, valeric acid, pivalic acid, caproic acid, caprylic acid, lauric acid, myristic acid, palmitic acid, stearic acid, acrylic acid, Methacrylic acid, crotonic acid, oleic acid, fumaric acid, maleic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, sebacic acid, dodecanedioic acid, pimelic acid, etc. Two or more kinds can be used in combination. Among these, the following formula (1):
_{HOOC- (CH 2) n -COOH (} 1)
(In Formula (1), n is an integer of 1-20.)
Of these, adipic acid, sebacic acid, and dodecanedioic acid are more preferably used.

  The structure of the aromatic carboxylic acid is not particularly limited, but a compound represented by the following formula (2) or the following formula (3) is preferable.

［式中、Ｒ¹〜Ｒ⁵は、それぞれ独立して、１価の有機基であり、Ｒ¹〜Ｒ⁵の少なくとも一つは水酸基である。］

[Wherein, R ^{1 to} R ⁵ are each independently a monovalent organic group, and at least one of R ^{1 to} R ⁵ is a hydroxyl group. ]

［式中、Ｒ⁶〜Ｒ²⁰は、それぞれ独立して、１価の有機基であり、Ｒ⁶〜Ｒ²⁰の少なくとも一つは水酸基またはカルボキシル基である。］

[Wherein, R ^{6 to} R ²⁰ are each independently a monovalent organic group, and at least one of R ^{6 to} R ²⁰ is a hydroxyl group or a carboxyl group. ]

  Examples of such aromatic carboxylic acids include benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, hemimellitic acid, trimellitic acid, trimesic acid, merophanic acid, platonic acid, pyromellitic acid, meritic acid, and xylic acid. , Hemelic acid, mesitylene acid, prenylic acid, toluic acid, cinnamic acid, salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6 -Dihydroxybenzoic acid, 3,5-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3 , Naphthoic acid derivatives such as 5--2-dihydroxy-2-naphthoic acid, phenolphthaline, diphenolic acid, etc. The recited may be used singly or in combination of two or more of them.

  The compound having such a flux function includes the metal layer 12, the metal layer 12 and the metal so that the terminals 21 and 41 can be electrically connected to each other through the connection portion 81 formed from the molten metal layer 12 and the metal particles 40. It has the function of reducing the surface oxide films of the particles 40 and the terminals 21 and 41 and has a function as a curing agent for curing the curable resin component, that is, a functional group capable of reacting with the curable resin component. Is preferred.

  Such a functional group is appropriately selected according to the type of the curable resin component. For example, when the curable resin component is an epoxy resin, a functional group capable of reacting with an epoxy group such as a carboxyl group, a hydroxyl group, and an amino group. Is mentioned. The compound having such a flux function reduces the surface oxide film formed on the metal layer 12, the metal particles 40, and the terminals 21 and 41 when the curable resin composition is melted, and improves the wettability of these surfaces. The connecting portion 81 can be easily formed, and the terminals 21 and 41 can be electrically connected. Furthermore, after the electrical connection between the terminals 21 and 41 is completed by the connecting portion 81, this compound acts as a curing agent and is added to the curable resin component to increase the elastic modulus or Tg of the resin. Demonstrate. Therefore, when a compound having such a flux function is used as the flux, flux cleaning is unnecessary, and the occurrence of ion migration due to the remaining flux can be suppressed or prevented accurately.

  Examples of the compound having such a function and having a flux function include compounds having at least one carboxyl group. For example, when the curable resin component is an epoxy resin, examples thereof include aliphatic dicarboxylic acids and compounds having a carboxyl group and a phenolic hydroxyl group.

  Although it does not specifically limit as said aliphatic dicarboxylic acid, The compound which two carboxyl groups couple | bonded with the aliphatic hydrocarbon group is mentioned. The aliphatic hydrocarbon group may be saturated or unsaturated acyclic, or may be saturated or unsaturated cyclic. Further, when the aliphatic hydrocarbon group is acyclic, it may be linear or branched.

  Examples of such aliphatic dicarboxylic acids include compounds in which n is an integer of 1 to 20 in the formula (1). When n in the formula (1) is within the above range, the balance between the flux activity, the outgas at the time of adhesion, the elastic modulus after curing of the curable resin composition, and the glass transition temperature becomes good. In particular, n is preferably 3 or more from the viewpoint that the increase in the elastic modulus after curing of the curable resin composition can be suppressed and the adhesion with an adherend such as the interposer 30 can be improved. From the viewpoint of suppressing the decrease in elastic modulus and further improving the connection reliability, n is preferably 10 or less.

  Examples of the aliphatic dicarboxylic acid represented by the formula (1) include glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, dodecanedioic acid, tridecanedioic acid, and tetradecanedioic acid. Pentadecanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosanedioic acid and the like. Among these, adipic acid, suberic acid, sebacic acid and dodencandioic acid are preferable, and sebacic acid is more preferable.

  Further, examples of the compound having a carboxyl group and a phenolic hydroxyl group include salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), and 2,6-dihydroxy. Benzoic acid derivatives such as benzoic acid, 3,4-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2 -Naphthoic acid derivatives such as naphthoic acid, phenolphthaline, diphenolic acid and the like. Of these, phenolphthaline, gentisic acid, 2,4-dihydroxybenzoic acid, and 2,6-dihydroxybenzoic acid are preferable, and phenolphthaline and gentisic acid are more preferable.

  The compounds having the flux function as described above may be used alone or in combination of two or more.

  In addition, since any compound easily absorbs moisture and causes voids, in the present invention, it is preferably dried in advance before use.

  Content of the compound which has a flux function can be suitably set according to the form of the resin composition to be used.

  For example, when the resin composition is liquid, the content of the compound having a flux function is preferably 1% by weight or more, more preferably 2% by weight or more, and more preferably 3% by weight with respect to the total weight of the curable resin composition. The above is particularly preferable. Moreover, 50 weight% or less is preferable, 40 weight% or less is more preferable, 30 weight% or less is further more preferable, and 25 weight% or less is especially preferable.

  In the case of a solid resin composition, the content of the compound having a flux function is preferably 1% by weight or more, more preferably 2% by weight or more based on the total weight of the curable resin composition, 3% by weight or more is particularly preferable. Moreover, 50 weight% or less is preferable, 40 weight% or less is more preferable, 30 weight% or less is further more preferable, and 25 weight% or less is especially preferable.

  When the content of the compound having the flux function is within the above range, the metal layer 12 and the surface oxide films of the terminals 21 and 41 can be reliably removed so that they can be electrically joined. Furthermore, when the resin composition is a curable resin composition, it can be efficiently added to the curable resin component at the time of curing to increase the elastic modulus or Tg of the curable resin composition. Moreover, generation | occurrence | production of the ion migration resulting from the compound which has an unreacted flux function can be suppressed.

(Iv) Curing agent The curing agent is not particularly limited, and examples thereof include phenols, amines, and thiols. Such a hardening | curing agent can be suitably selected according to the kind etc. of curable resin component. For example, when an epoxy resin is used as the curable resin component, good reactivity with the epoxy resin, low dimensional change during curing, and appropriate physical properties after curing (eg heat resistance, moisture resistance, etc.) are obtained. In view of the above, it is preferable to use a phenol as a curing agent, and a bifunctional or higher functional phenol is more preferably used in terms of excellent physical properties after curing of the curable resin component. In addition, such a hardening | curing agent may be used individually by 1 type, and may be used in combination of 2 or more type.

  Examples of phenols include bisphenol A, tetramethylbisphenol A, diallyl bisphenol A, biphenol, bisphenol F, diallyl bisphenol F, trisphenol, tetrakisphenol, phenol novolac resin, cresol novolac resin, etc. Species or a combination of two or more can be used. Among these, a phenol novolac resin and a cresol novolac resin are preferable from the viewpoints of good melt viscosity, reactivity with an epoxy resin, and excellent physical properties after curing.

  In addition, in the curable resin composition, the amount of the curing agent described above is such that the type of the curable resin component and the curing agent to be used, and the compound having a flux function have a functional group that functions as a curing agent. It is set as appropriate depending on the type of group and the amount used.

  For example, when an epoxy resin is used as the curable resin, the content of the curing agent is preferably about 0.1 to 50% by weight with respect to the total weight of the curable resin composition, 0.2 to 40 It is more preferably about wt%, and further preferably about 0.5 to 30 wt%. When the content of the curing agent is within the above range, the electrical connection strength and the mechanical adhesive strength of the connection portion 81 formed between the terminals 21 and 41 can be sufficiently ensured.

(V) Curing accelerator As described above, a curing accelerator can be further added to the curable resin composition. Thereby, a curable resin composition can be hardened reliably and easily.

  Although it does not specifically limit as a hardening accelerator, For example, imidazole, 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2- Phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-ethyl-4-methyl Imidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2, 4 Diamino-6- [2′-methylimidazolyl (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- [2′-undecylimidazolyl (1 ′)]-ethyl-s-triazine, 2 , 4-Diamino-6- [2'-ethyl-4-methylimidazolyl (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-methylimidazolyl (1')]-ethyl -Isocyanuric acid adduct of s-triazine, isocyanuric acid adduct of 2-phenylimidazole, isocyanuric acid adduct of 2-methylimidazole, 2-phenyl-4,5-dihydroxydimethylimidazole, 2-phenyl-4-methyl- Examples include imidazole compounds such as 5-hydroxymethylimidazole, and one or more of these may be used in combination. Kill.

  Moreover, in the curable resin composition, the blending amount of the above-described curing accelerator can be appropriately set according to the type of the curing accelerator to be used.

  For example, when an imidazole compound is used, the amount of the imidazole compound is preferably 0.001% by weight or more, more preferably 0.003% by weight or more in the curable resin composition, More preferably, it is 0.005% by weight or more. Further, it is preferably 1.0% by weight or less, more preferably 0.7% by weight or less, and further preferably 0.5% by weight or less. When the blending amount of the imidazole compound is less than the lower limit, depending on the type of the curing accelerator to be used, the effect as the curing accelerator may not be sufficiently exhibited, and the curable resin composition may not be sufficiently cured. . Further, when the amount of the imidazole compound exceeds the upper limit, the molten metal layer 12 and the metal particles 40 cannot sufficiently move to the surfaces of the terminals 21 and 41 before the curing of the curable resin composition is completed, There is a possibility that a part of the metal layer 12 and / or the metal particles 40 remains in the sealing layer 80 formed in the insulating region, and the insulating property in the sealing layer 80 cannot be sufficiently secured.

(Vi) Silane Coupling Agent As described above, a silane coupling agent can be further added to the curable resin composition.

  Although it does not specifically limit as a silane coupling agent, For example, an epoxy silane coupling agent, an aromatic containing aminosilane coupling agent, etc. are mentioned. By adding such a silane coupling agent, it is possible to improve the adhesion between the joining member (adhered body) such as the interposer 30 and the curable resin composition.

  In addition, such a silane coupling agent may be used individually by 1 type, and can also be used in combination of 2 or more type.

  Moreover, in the curable resin composition, the blending amount of the silane coupling agent described above is appropriately set according to the types of the joining member, the curable resin component, and the like. For example, in the curable resin composition, it is preferably 0.01% by weight or more, more preferably 0.05% by weight or more, and further preferably 0.1% by weight or more. Further, it is preferably 2% by weight or less, more preferably 1.5% by weight or less, and further preferably 1% by weight or less.

  In addition to the components described above, the curable resin composition further contains a plasticizer, a stabilizer, a tackifier, a lubricant, an antioxidant, a filler, an antistatic agent, a pigment, and the like. Also good.

  Moreover, the curable resin composition as described above can be prepared by mixing and dispersing the above components. The mixing method and dispersion method of each component are not specifically limited, It can mix and disperse | distribute by a conventionally well-known method.

  Moreover, you may prepare the liquid curable resin composition by mixing each said component in a solvent or under absence of solvent. The solvent used at this time is not particularly limited as long as it is inert to each component. For example, acetone, methyl ethyl ketone (MEK), methyl isobutyl ketone (MIBK), diisobutyl ketone (DIBK), cyclohexanone, Ketones such as diacetone alcohol (DAA), aromatic hydrocarbons such as benzene, xylene and toluene, alcohols such as methyl alcohol, ethyl alcohol, isopropyl alcohol and n-butyl alcohol, methyl cellosolve, ethyl cellosolve, butyl cellosolve, Cellosolves such as methyl cellosolve acetate and ethyl cellosolve acetate, N-methyl-2-pyrrolidone (NMP), tetrahydrofuran (THF), dimethylformamide (DMF), dibasic acid ester (DBE), 3 Ethyl ethoxypropionate (EEP), dimethyl carbonate (DMC) and the like, can be used singly or in combination of two or more of them. Moreover, it is preferable that the usage-amount of a solvent is an quantity from which the solid content concentration of the component mixed with the solvent will be 10 to 60 weight%.

(B) Thermoplastic resin composition The thermoplastic resin composition contains a thermoplastic resin component and softens at a predetermined temperature.

  In addition to the thermoplastic resin component, the thermoplastic resin composition may contain a compound having a flux function, a film-forming resin, a silane coupling agent, and the like, if necessary.

(I) Thermoplastic resin component The thermoplastic resin component is not particularly limited. For example, vinyl acetate, polyvinyl alcohol resin, polyvinyl butyral resin, vinyl chloride resin, (meth) acrylic resin, phenoxy resin, polyester resin, polyimide Resin, polyamideimide resin, siloxane-modified polyimide resin, polybutadiene resin, acrylic resin, styrene resin, polyethylene resin, polypropylene resin, polyamide resin, cellulose resin, isobutylene resin, vinyl ether resin, liquid crystal polymer resin, polyphenylene sulfide resin, polyphenylene ether resin, Polyethersulfone resin, polyetherimide resin, polyetheretherketone resin, polyurethane resin, styrene-butadiene-styrene copolymer, styrene- Tylene-butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer And polyvinyl acetate. These thermoplastic resin components may be a single polymer, or may be a copolymer of at least two of these thermoplastic resin components.

  The softening point of the thermoplastic resin component is not particularly limited, but is preferably 10 ° C. or more lower than the melting point of the metal layer 12 constituting the conductive connection sheet 1, more preferably 20 ° C. or more, and further preferably 30 ° C. or more. preferable.

  Further, the decomposition temperature of the thermoplastic resin component is not particularly limited, but is preferably higher by 10 ° C. or higher than the melting point of the metal layer 12, more preferably higher by 20 ° C., and further preferably higher by 30 ° C. or higher.

  In the thermoplastic resin composition, the amount of the thermoplastic resin component described above is appropriately set according to the form of the thermoplastic resin composition to be used.

  For example, in the case of a liquid thermoplastic resin composition, the blending amount of the thermoplastic resin component is preferably 10% by weight or more, more preferably 15% by weight or more in the thermoplastic resin composition. It is preferably 20% by weight or more, more preferably 25% by weight or more, still more preferably 30% by weight or more, and particularly preferably 35% by weight or more. Further, it is preferably 100% by weight or less, more preferably 95% by weight or less, still more preferably 90% by weight or less, still more preferably 75% by weight or less, and 65% by weight or less. Is still more preferable, and it is especially preferable that it is 55 weight% or less.

  In the case of a solid thermoplastic resin composition, the amount of the thermoplastic resin component is preferably 5% by weight or more, and preferably 10% by weight or more in the thermoplastic resin composition. More preferably, it is more preferably 15% by weight or more, and particularly preferably 20% by weight or more. Further, it is preferably 90% by weight or less, more preferably 85% by weight or less, still more preferably 80% by weight or less, still more preferably 75% by weight or less, and 65% by weight or less. It is still more preferable that it is 55% by weight or less.

  When the blending amount of the thermoplastic resin component in the thermoplastic resin composition is within the above range, the electrical connection strength and the mechanical adhesive strength between the terminals 21 and 41 can be sufficiently ensured.

(Ii) Other additives In addition to thermoplastic resin components, compounds having a flux function, film-forming resins, silane coupling agents, plasticizers, stabilizers, tackifiers, lubricants, antioxidants, filling An agent, an antistatic agent, a pigment, and the like may be blended, but these can be the same as those described in the above-mentioned “(a) curable resin composition”. Further, the same applies to preferred compounds and their blending amounts.

  In addition, in this invention, it is preferable to use a curable resin composition as a resin composition among what was mentioned above. Among them, the epoxy resin is 10 to 90% by weight, the curing agent is 0.1 to 50% by weight, the film-forming resin is 5 to 50% by weight, and the compound having a flux function is 1 to 50% by weight based on the total weight of the resin composition More preferably, it contains The epoxy resin is 20 to 80% by weight, the curing agent is 0.2 to 40% by weight, the film-forming resin is 10 to 45% by weight, and the compound having a flux function is 2 to 40% by weight with respect to the total weight of the resin composition. More preferably, those containing The epoxy resin is 35 to 55% by weight, the curing agent is 0.5 to 30% by weight, the film-forming resin is 15 to 40% by weight, and the compound having a flux function is 3 to 25% by weight with respect to the total weight of the resin composition. Those containing are particularly preferred. As a result, it is possible to sufficiently ensure the electrical connection strength and the mechanical adhesive strength between the terminals 21 and 41.

(B) Metal Particles The metal particles (particles) 40 are particles composed of a low melting point metal material.

  Like the metal layer 12 described above, the metal particle 40 melts when heated to the melting point or higher, and is further included in the metal particle-containing layer 11 when the metal particle-containing layer 11 includes a compound having a flux function. The oxide film formed on the surface of the metal particles 40 is reduced by the action of the compound having a flux function, so that the wettability of the molten metal particles 40 is improved. Therefore, the metal particles 40 are selectively agglomerated together with the metal layer 12 between the terminals 21 and 41, and finally, the connection part 81 is formed by these solidified substances.

  As the low melting point metal material constituting the metal particles 40, the same material as the low melting point metal material constituting the metal layer 12 is used.

  The low melting point metal material constituting the metal particles 40 may be the same (same) or different from the low melting point metal material constituting the metal layer 12, but the same kind. Is preferred. As a result, the affinity between the low melting point metal material constituting the metal particles 40 and the low melting point metal material constituting the metal layer 12 is improved. You can improve your power.

  The average particle diameter of the metal particles 40 is not particularly limited, but is preferably about 0.1 to 50 μm, and more preferably about 1 to 30 μm. As a result, when the molten metal particles 40 are aggregated between the terminals 21 and 41, the chance of contact with the adjacent metal particles 40 and the metal layer 12 increases. Therefore, the connection part 81 can be formed by accurately suppressing or preventing the metal particles 40 from remaining in the sealing layer 80.

  The average particle diameter of the metal particles 40 can be measured by, for example, a laser diffraction scattering method.

  Further, the content of the metal particles 40 in the metal particle-containing layer 11 is not particularly limited, but is not particularly limited, but the separation distance (gap) between the opposing terminals 21 and 41 and between the adjacent terminals 21 and 41 is not limited. It is set appropriately according to the separation distance or the like.

  For example, as in the present embodiment, the connection between the terminals 21 and 41 in the semiconductor device 10 is preferably about 1 to 70% by weight, and more preferably about 5 to 50% by weight. If the content of the metal particles 40 in the metal particle-containing layer 11 is less than the lower limit, unconnected terminals 21 and 41 may be generated due to a shortage of the metal material constituting the metal particles 40, and if the upper limit is exceeded. The surplus of the metal material may cause a bridge between the adjacent terminals 21 and 41 due to the connecting portion 81, thereby causing a short circuit.

  When the metal layer 12 is formed by direct vapor deposition, sputtering, plating, or the like on the metal particle-containing layer 11, it takes time or labor to form a thick film, and the film strength decreases. Such problems may occur. In order to solve such problems, even if the thickness of the metal layer 12 is set thin, the terminal 21 and the terminal 41 are electrically connected by increasing the content of the metal particles 40 in the metal particle-containing layer 11. A sufficient amount of a low-melting-point metal material for forming the connection part 81 connected to the terminal can be supplied between the terminals 21 and 41.

  Moreover, in this embodiment, although the conductive connection sheet 1 is a structure provided with two layers of the 1st metal particle content layer 11 and the 2nd metal particle content layer 13, it is contained in the 2nd metal particle content layer 13 The resin composition is not limited as long as it has the same configuration as the resin composition included in the first metal particle-containing layer 11 described above, and is the same as the resin composition included in the first metal particle-containing layer 11. The composition may be of a different composition.

  Furthermore, the conductive connection sheet 1 only needs to include at least one metal particle-containing layer, and even if one of the first metal particle-containing layer 11 and the second metal particle-containing layer 13 is omitted. Moreover, the thing of the structure provided with the 3rd and 4th metal particle content layer different from the 1st metal particle content layer 11 and the 2nd metal particle content layer 13 may be sufficient.

  The thickness of the metal particle-containing layer 11 in the conductive connection sheet 1 is not particularly limited, but is preferably 1 μm or more, more preferably 3 μm or more, and further preferably 5 μm or more. Further, the thickness of the metal particle-containing layer 11 is preferably 200 μm or less, more preferably 150 μm or less, and further preferably 100 μm or less. When the thickness of the metal particle-containing layer 11 is within the above range, the gap between the adjacent terminals 21 and 41 can be sufficiently filled with the resin composition to form the sealing layer 80, and the resin composition can be cured. The mechanical adhesion strength after or after solidification and the electrical connection between the opposing terminals 21 and 41 can be sufficiently ensured, and the connection portion 81 can be formed.

  The form of the conductive connection sheet 1 as described above is appropriately set according to the form of the resin composition constituting the metal particle-containing layer 11.

  For example, when the curable resin composition is in a liquid state, the metal layer 12 is prepared, and a curable resin composition containing the metal particles 40 is applied on both sides thereof, and this is semi-cured (B-staged) at a predetermined temperature. ) Can be used as the conductive connection sheet 1. In addition, a curable resin composition containing the metal particles 40 is applied on a release substrate such as a polyester sheet, and the resultant is formed into a film for the purpose of semi-curing (B-stage) at a predetermined temperature. What was peeled off from the board | substrate and bonded on the metal layer 12 on the film can be used as the conductive connection sheet 1.

  When the resin composition is solid, a resin composition varnish dissolved in an organic solvent with metal particles 40 added is applied onto a release substrate such as a polyester sheet and dried at a predetermined temperature. Then, the metal particle-containing layer 11 can be formed, and then the metal layer 12 can be used as the conductive connection sheet 1. Moreover, what formed the metal layer 12 into the film form using methods, such as vapor deposition, on the metal particle content layer 11 obtained by carrying out similarly to the above can also be provided as the electrically conductive connection sheet 1. FIG.

  In addition, the metal layer 12 may be embossed for the purpose of improving adhesion with the metal particle-containing layer 11.

  The thickness of the conductive connection sheet 1 is not particularly limited, but is preferably 1 μm or more, more preferably 3 μm or more, further preferably 5 μm or more, and preferably 200 μm or less. 150 μm or less is more preferable, and 100 μm or less is further preferable. When the thickness of the conductive connection sheet 1 is within the above range, the gap between the adjacent terminals 21 and 41 can be sufficiently filled with the sealing layer 80 made of the resin composition. In addition, the mechanical adhesive strength after the resin component is cured or solidified and the electrical connection between the opposing terminals can be sufficiently ensured. In addition, it is possible to manufacture a connection terminal according to the purpose and application.

  In the present embodiment, when an oxide film is formed on the metal layer 12, the metal particles 40, and the terminals 21, 41, the first metal particle-containing layer 11 and the first metal particle-containing layer 11 are used for the purpose of removing the oxide film. Although it has been described that the resin composition contained in the second metal particle-containing layer 13 preferably includes a compound having a flux function, in the resin composition, instead of the compound having a flux function, Antioxidants may be included.

<Method for producing conductive connection sheet>
Next, the conductive connection sheet 1 having the above-described configuration can be manufactured by, for example, the following manufacturing method.

(I) When the resin component is liquid at 25 ° C. When the resin composition contained in the first metal particle-containing layer 11 and the second metal particle-containing layer 13 is liquid at 25 ° C., first, a metal Layer 12 is prepared.
This metal layer 12 can be manufactured by rolling from a lump such as an ingot, for example.

  Next, the liquid resin composition added with the metal particles 40 is adhered to both surfaces of the metal layer 12 by impregnating the metal layer 12 into the liquid resin composition added with the metal particles 40 therein. Then, the conductive connection sheet 1 in which the metal particle-containing layers 11 and 13 are formed on both surfaces of the metal layer 12 can be produced by semi-curing the resin composition at a predetermined temperature.

  In addition, when it is necessary to control the thickness of the metal particle-containing layers 11 and 13 to be formed, the metal layer 12 immersed in the liquid resin composition to which the metal particles 40 are added has a certain gap. The metal particle-containing layers 11 and 13 having a desired thickness can be easily manufactured by passing the bar coater or spraying the liquid resin composition to which the metal particles 40 are added onto the metal layer 12 with a spray coater or the like. can do.

(Ii) When the resin component material forms a film at 25 ° C. When the resin composition contained in the first metal particle-containing layer 11 and the second metal particle-containing layer 13 forms a film at 25 ° C., A release substrate such as a polyester sheet is prepared.

  Next, a varnish obtained by dissolving the resin composition in an organic solvent is coated on a release substrate, and then dried at a predetermined temperature to form a film-like metal. Particle-containing layers 11 and 13 are formed.

  Next, two film-like metal particle-containing layers obtained by the above-mentioned process are prepared, and a heat roll is prepared in a state where the metal layer 12 previously produced is sandwiched between these film-like metal particle-containing layers. By laminating, the conductive connection sheet 1 in which the metal particle containing layers 11 and 13 are formed on both surfaces of the metal layer 12 can be manufactured.

  When using the wound metal layer 12, the metal layer 12 is used as a base substrate, and the above-described film-like metal particle-containing layers are laminated on both sides of the metal layer 12 using a hot roll. By doing so, the wound conductive connection sheet 1 can be obtained.

  Furthermore, when using the metal layer 12 in a wound form, the metal layer 12 is applied directly to both sides of the metal layer 12 with the metal particles 40 added to the varnish obtained as described above, and then the solvent is stripped off. By drying, a wound conductive connection sheet 1 can be obtained.

  When producing a conductive connection sheet having a patterned metal layer, first, for example, a metal layer that forms a sheet is disposed on a release substrate, and the metal layer is formed using a mold from the metal layer side. Half-cutting removes the extra metal layer to form a patterned metal layer.

  Next, the film-like metal particle-containing layer obtained by the above-described method is disposed on the surface of the metal layer opposite to the release substrate, and in this state is laminated using a hot roll, and then the release group is formed. Peel the material from the metal layer.

  Furthermore, the film-like metal particle-containing layer obtained by the above-described method is disposed on the surface of the metal layer from which the release substrate is peeled, and in this state is laminated using a hot roll, whereby both surfaces of the metal layer are obtained. A conductive connection sheet having a metal particle-containing layer formed thereon can be produced.

  In addition, the manufacturing method of an electroconductive connection sheet is not limited to the method mentioned above, The manufacturing method of an electroconductive connection sheet can be suitably selected according to the objective and a use.

  The conductive connection sheet 1 as described above is used, for example, for forming the connection portion 81 and the sealing layer 80 included in the semiconductor device 10.

  The connection method between terminals of the present invention or the method of forming connection terminals of the present invention is applied to the formation of the connection portion 81 and the sealing layer 80 using the conductive connection sheet 1.

<Connection method between terminals of the present invention>
Below, the case where the connection part 81 and the sealing layer 80 are formed first by applying the connection method between the terminals of this invention is explained in full detail.

  FIG. 4 is a longitudinal sectional view for explaining a method of manufacturing a connection portion and a sealing layer included in a semiconductor device using the connection method between terminals of the present invention. In the following description, the upper side in FIG. 4 is referred to as “upper” and the lower side is referred to as “lower”.

  In the method of forming the connection portion 81 and the sealing layer 80 described below, the terminal 21 provided on the semiconductor chip (base material) 20 with the conductive connection sheet 1 and the terminal 41 provided on the interposer (opposite base material) 30 And a heating step for heating the conductive connection sheet 1 to a temperature equal to or higher than the melting point of the metal material, and a curing (solidification) step for curing or solidifying the resin composition.

  In addition, when forming the connection part 81 and the sealing layer 80, when the resin composition contained in the metal particle content layers 11 and 13 with which the conductive connection sheet 1 is provided is composed of a curable resin composition, and a thermoplastic resin. The formation method is slightly different from the case of the composition. Therefore, in the following, the case where the resin composition contained in the metal particle-containing layers 11 and 13 is composed of a curable resin composition is referred to as a first embodiment, and the case where the resin composition is composed of a thermoplastic resin composition is a second embodiment. Each embodiment will be described as a form.

<< First Embodiment >>
In the first embodiment in which the resin composition included in the metal particle-containing layers 11 and 13 included in the conductive connection sheet 1 is formed of a curable resin composition, the semiconductor chip 20 is provided with the terminals 21 and the interposer 30. The placement step of placing the conductive connection sheet 1 between the terminal 41 and the melting point of the metal layer 12 (metal material) and the curable resin composition constituting the metal particle-containing layers 11 and 13 is cured. It has the heating process which heats the conductive connection sheet 1 at the temperature which is not completed, and the hardening process which completes hardening of curable resin composition.

Hereinafter, each process is explained in full detail.
[1] Arrangement Step First, the semiconductor chip 20 and the interposer 30 provided with the terminals 41 are prepared.

  Next, the conductive connection sheet 1 is thermocompression bonded to the surface on the terminal 41 side of the interposer 30 using an apparatus such as a roll laminator or a press.

  In this state, the semiconductor chip 20 and the interposer 30 are aligned so that the terminals 21 and the terminals 41 included in the semiconductor chip 20 and the interposer 30 face each other, as shown in FIG.

  Thus, the conductive connection sheet 1 is disposed between the semiconductor chip 20 and the interposer 30 in a state where the terminals 21 and the terminals 41 face each other.

  As shown in FIG. 4A, the conductive connection sheet 1 is not limited to being thermocompression bonded to the interposer 30 side, and may be thermocompression bonded to the semiconductor chip 20 side. It may be thermocompression bonded.

[2] Heating Step Next, in the placement step [1], the conductive connection sheet 1 placed between the semiconductor chip 20 and the interposer 30 is replaced with the metal layer 12 as shown in FIG. And it heats more than melting | fusing point of the metal particle 40.

  The heating temperature should just be more than melting | fusing point of the metal layer 12 and the metal particle 40, for example, a metal material with a low melting point moves in a curable resin composition by adjusting heating time, such as shortening heating time. The upper limit is not particularly limited as long as it is within a possible range, that is, a range in which “curing of the curable resin composition is not completed”.

  Specifically, the heating temperature is preferably 5 ° C or more higher than the melting point of the metal layer 12 and the metal particles 40, more preferably 10 ° C or more, more preferably 20 ° C. A higher temperature is more preferable, and a higher temperature of 30 ° C. or higher is particularly preferable.

  Specifically, the heating temperature is appropriately set depending on the composition of the metal layer 12, the metal particles 40, and the curable resin composition to be used, but is preferably 100 ° C or higher, and preferably 130 ° C or higher. More preferably, the temperature is 140 ° C. or higher, and most preferably 150 ° C. or higher. The heating temperature is preferably 260 ° C. or lower, more preferably 250 ° C. or lower, and 240 ° C. or lower from the viewpoint of preventing thermal deterioration of the semiconductor chip 20 and interposer 30 to be connected. More preferably it is.

  When the conductive connection sheet 1 is heated at such a temperature, the metal layer 12 and the metal particles 40 are melted, and the melted metal layer 12 and the metal particles 40, that is, the low melting point metal material pass through the metal particle-containing layers 11 and 13. You can move.

  At this time, when a compound having a flux function is included in the curable resin composition, even if an oxide film is formed on the surfaces of the metal layer 12 and the metal particles 40 due to the reducing action of the compound having the flux function, This oxide film is removed by reduction. Therefore, the molten metal material is in a state in which the wettability is enhanced and the metal bonding is promoted, so that the molten metal material is likely to be aggregated between the terminals 21 and 41 arranged opposite to each other.

  Further, even if an oxide film is formed on the surfaces of the terminals 21 and 41, this oxide film is also removed by the reducing action of the compound having a flux function, and its wettability is enhanced. As a result, metal bonding with the metal material is promoted, and from this point of view, the molten metal material is easily aggregated between the terminals 21 and 41 arranged to face each other.

  From the above, the molten metal material constituting the metal layer 12 and the metal particles 40 moves selectively in the metal particle-containing layers 11 and 13, that is, in the curable resin component, and selectively between the terminals 21 and 41. Aggregate.

  At this time, in the molten metal layer 12 and the metal particles 40, the size of the metal particles 40 is smaller, and the metal particles 40 included in the first metal particle-containing layer 11 are more than the metal layer 12. Since the metal particles 40 located proximal to the terminal 21 and contained in the second metal particle-containing layer 13 are located closer to the terminal 41 than the metal layer 12, first, the molten metal The particles 40 move (aggregate) in the first metal particle-containing layer 11 or the second metal particle-containing layer 13 toward the terminal 21 or the terminal 41. The movement of the metal particles 40 is a starting point (trigger), and the molten metal layer 12 also moves in the first metal particle-containing layer 11 or the second metal particle-containing layer 13 toward the terminal 21 or the terminal 41. However, the movement of the metal layer 12 becomes a large flow, and the metal layer 12 is divided into a plurality of pieces. At this time, the metal particles 40 remaining in the first metal particle-containing layer 11 and the second metal particle-containing layer 13 are also taken into the moving metal layer 12.

  Therefore, the molten metal layer 12 and the metal particles 40, that is, the molten metal material are aggregated between the terminals 21 and 41 with high selectivity. As a result, as shown in FIG. 4C, a connection part 81 made of a metal material is formed between the terminals 21 and 41, and the terminal 21 and the terminal 41 are electrically connected via the connection part 81. Connected. At this time, the sealing layer 80 is formed by surrounding the connection portion 81 and filling the curable resin composition without containing a metal material. As a result, insulation between the adjacent terminals 21 and 41 is ensured, so that a short circuit between the adjacent terminals 21 and 41 is prevented.

  In the method of forming the connection part 81 and the sealing layer 80 using the conductive connection sheet 1 as described above, the connection part 81 is formed by selectively agglomerating the heated and melted metal material between the terminals 21 and 41, A sealing layer 80 made of a curable resin composition can be formed around the periphery. As a result, the insulation between the adjacent terminals 21 and 41 can be secured and the occurrence of leakage current can be reliably prevented, so that the connection reliability of the connection via the connection portion 81 between the terminals 21 and 41 is improved. Can do.

  In addition, even in a fine wiring circuit, electrical connection between a large number of terminals 21 and 41 can be performed collectively. Furthermore, in the next step [3], the mechanical strength of the connection portion 81 and the sealing layer 80 can be increased by curing the curable resin composition.

  In this step [2], the semiconductor chip 20 and the interposer 30 may be heated in a pressurized state so that the distance between the opposing terminals 21 and 41 is reduced. For example, the distance between the terminals 21 and 41 facing each other can be increased by heating and pressurizing the semiconductor chip 20 and the interposer 30 in FIG. Since it can be controlled to be constant, it is possible to increase the electrical connection reliability by the connecting portion 81 between the opposing terminals 21 and 41.

  Furthermore, when applying pressure or heating, an ultrasonic wave or an electric field may be applied, or special heating such as laser or electromagnetic induction may be applied.

[3] Curing Step Next, in the heating step [2], after forming the connecting portion 81 and the sealing layer 80, the sealing layer 80 is fixed by curing the curable resin composition.

  Thereby, both the electrical reliability by the connection part 81 between the terminals 21 and 41 and the mechanical reliability by the sealing layer 80 are fully securable.

  In particular, in this embodiment, since the curable resin composition having a high insulation resistance value at the time of high melt viscosity is used, the insulation of the sealing layer (insulating region) 80 can be more reliably ensured.

  Curing of the curable resin composition can be carried out by heating the curable resin composition. The curing temperature of the curable resin composition can be appropriately set according to the composition of the curable resin composition. Specifically, the temperature is preferably at least 5 ° C. lower than the heating temperature in the heating step [2], and more preferably at least 10 ° C. lower. More specifically, it is preferably 100 ° C. or higher, more preferably 120 ° C. or higher, further preferably 130 ° C. or higher, and most preferably 150 ° C. or higher. Moreover, it is preferable that it is 300 degrees C or less, It is more preferable that it is 260 degrees C or less, It is more preferable that it is 250 degrees C or less, It is most preferable that it is 240 degrees C or less. When the curing temperature is within the above range, the curable resin composition can be sufficiently cured while reliably preventing the conductive connection sheet 1 from being thermally decomposed.

  Through the steps as described above, the connection portion 81 and the sealing layer 80 are formed between the semiconductor chip 20 and the interposer 30.

<< Second Embodiment >>
In the second embodiment in which the resin composition contained in the metal particle-containing layers 11 and 13 provided in the conductive connection sheet 1 is composed of a thermoplastic resin composition, the semiconductor chip 20 and the interposer 30 provided with terminals 41 are provided. The conductive connection sheet 1 is heated at a temperature above the melting point of the metal layer 12 and at a temperature at which the thermoplastic resin composition constituting the metal particle-containing layers 11 and 13 is softened. A heating step, and a solidifying step for solidifying the thermoplastic resin composition.

Hereinafter, each process is explained in full detail.
[1] Arrangement Step The first embodiment in which the metal particle-containing layers 11 and 13 are made of a thermosetting resin composition also in the present embodiment in which the metal particle-containing layers 11 and 13 are made of a thermoplastic resin composition. Similarly to the embodiment, the conductive connection sheet 1 is disposed between the semiconductor chip 20 and the interposer 30 provided with the terminals 41 in a state where the terminals 21 and the terminals 41 face each other.

[2] Heating Step Next, the conductive connection sheet 1 arranged between the semiconductor chip 20 and the interposer 30 provided with the terminals 41 in the arrangement step [1] is shown in FIG. Thus, the metal layer 12 and the metal particles 40 are heated at a temperature equal to or higher than the melting point.

  The heating temperature is preferably 5 ° C. or more higher than the melting point of the metal layer 12 and the metal particles 40, preferably 10 ° C. or more, more preferably 20 ° C. or more. It is more preferable that the temperature is 30 ° C. or higher.

  Specifically, the heating temperature is appropriately set depending on the composition of the metal layer 12, the metal particles 40, and the thermoplastic resin composition to be used. For example, the heating temperature is described in the heating step [2] of the first embodiment described above. It is set to the same temperature range as the above.

  When the conductive connection sheet 1 is heated at such a temperature, the metal layer 12 and the metal particles 40 are melted, and the melted metal layer 12 and the metal particles 40, that is, the low melting point metal material pass through the metal particle-containing layers 11 and 13. You can move.

  At this time, when a compound having a flux function is included in the thermoplastic resin composition, even if an oxide film is formed on the surfaces of the metal layer 12 and the metal particles 40 due to the reducing action of the compound having the flux function, This oxide film is reduced and reliably removed. Therefore, the molten metal material is in a state in which wettability is enhanced and metal bonding is promoted, so that the molten metal material is likely to agglomerate between the terminals 21 and 41 arranged facing each other.

  Further, even if an oxide film is formed on the surfaces of the terminals 21 and 41, this oxide film is also removed by the reducing action of the compound having the flux function, so that the wettability is surely enhanced. Yes. As a result, metal bonding with the metal material is promoted, and from this point of view, the molten metal material is easily aggregated between the terminals 21 and 41 arranged to face each other.

  From the above, the molten metal material constituting the metal layer 12 and the metal particles 40 moves in the thermoplastic resin component and selectively aggregates between the terminals 21 and 41.

  At this time, in the molten metal layer 12 and the metal particles 40, the size of the metal particles 40 is smaller, and the metal particles 40 included in the first metal particle-containing layer 11 are more than the metal layer 12. Since the metal particles 40 located proximal to the terminal 21 and contained in the second metal particle-containing layer 13 are located closer to the terminal 41 than the metal layer 12, first, the molten metal The particles 40 move (aggregate) in the first metal particle-containing layer 11 or the second metal particle-containing layer 13 toward the terminal 21 or the terminal 41. The movement of the metal particles 40 is a starting point (trigger), and the molten metal layer 12 also moves in the first metal particle-containing layer 11 or the second metal particle-containing layer 13 toward the terminal 21 or the terminal 41. However, the movement of the metal layer 12 becomes a large flow, and the metal layer 12 is divided into a plurality of pieces. At this time, the metal particles 40 remaining in the first metal particle-containing layer 11 and the second metal particle-containing layer 13 are also taken into the moving metal layer 12.

  Therefore, the molten metal layer 12 and the metal particles 40, that is, the molten metal material are aggregated between the terminals 21 and 41 with high selectivity. As a result, as shown in FIG. 4C, a connection part 81 made of a metal material is formed between the terminals 21 and 41, and the terminal 21 and the terminal 41 are electrically connected via the connection part 81. Connected. At this time, the sealing layer 80 is formed by filling the curable resin composition surrounding the periphery of the connecting portion 81 without containing a metal material. As a result, insulation between the adjacent terminals 21 and 41 is ensured, so that a short circuit between the adjacent terminals 21 and 41 is prevented.

  In the method for forming the connection portion 81 and the sealing layer 80 as described above, the metal material heated and melted is selectively aggregated between the terminals 21 and 41 to form the connection portion 81, and the thermoplastic resin composition is formed around the connection portion 81. The sealing layer 80 comprised by this can be formed. As a result, the insulation between the adjacent terminals 21 and 41 can be secured and the occurrence of leakage current can be reliably prevented, so that the connection reliability of the connection via the connection portion 81 between the terminals 21 and 41 is improved. Can do.

  In addition, even in a fine wiring circuit, electrical connection between a large number of terminals 21 and 41 can be performed collectively. Furthermore, in the next step [3], the mechanical strength of the connection portion 81 and the sealing layer 80 can be increased by solidifying the thermoplastic resin composition.

[3] Solidification Step Next, in the heating step [2], after forming the connection portion 81 and the sealing layer 80, the sealing layer 80 is fixed by solidifying the thermoplastic resin composition.

  Thereby, both the electrical reliability by the connection part 81 between the terminals 21 and 41 and the mechanical reliability by the sealing layer 80 are fully securable.

  Solidification of the thermoplastic resin composition can be carried out by cooling the thermoplastic resin composition heated in the heating step [2].

  Solidification of the thermoplastic resin composition by cooling of the thermoplastic resin composition, that is, fixing of the sealing layer 80 is appropriately selected according to the composition of the thermoplastic resin composition. Specifically, a method by natural cooling may be used, and a method such as blowing cold air is appropriately selected.

  The solidification temperature of the thermoplastic resin composition is not particularly limited, but is preferably lower than the melting point of the metal layer 12. Specifically, the solidification temperature of the thermoplastic resin composition is preferably 10 ° C. or more lower than the melting point of the metal layer 12, more preferably 20 ° C. or more. Moreover, it is preferable that the solidification temperature of a thermoplastic resin composition is 50 degreeC or more, It is more preferable that it is 60 degreeC or more, It is further more preferable that it is 100 degreeC or more. When the solidification temperature of the thermoplastic resin composition is within the above range, the connecting portion 81 can be reliably formed, and the sealing layer 80 can exhibit excellent heat resistance. As a result, insulation between the adjacent terminals 21 and 41 can be ensured accurately, and a short circuit between the adjacent terminals 21 and 41 can be prevented more reliably.

  Through the steps as described above, the connection portion 81 and the sealing layer 80 are formed between the semiconductor chip 20 and the interposer 30.

  In the first embodiment and the second embodiment, the case where the terminal 21 protrudes from the surface side formed on the semiconductor chip 20 and the terminal 41 also protrudes from the interposer 30 has been described. The method of forming the connection terminal according to the present invention is not limited to such a case. The terminal 41 is exposed without protruding from the surface of the interposer 30 where the terminal 41 is formed, and the terminal 21 is formed on the semiconductor chip 20. The present invention can also be applied to a case in which the terminal 21 is protruded from the surface on which the terminal 21 is formed. Further, the terminal 41 is exposed without protruding from the surface on which the terminal 41 of the interposer 30 is formed, and the terminal 21 is also exposed without protruding from the surface side on which the terminal of the semiconductor chip 20 is formed. It can also be applied to cases where

  Further, the terminal 41 protrudes from the surface on which the terminal 41 of the interposer 30 is formed, and the terminal 21 is exposed without protruding from the surface on which the terminal 21 of the semiconductor chip 20 is formed. It can also be applied to cases.

Further, in the first embodiment and the second embodiment, the case where the connection portion 81 is formed and electrically connected between the terminal 21 and the terminal 41 provided in the semiconductor chip 20 and the interposer 30 has been described. However, the present invention is not limited to this case, and can be applied to electrically connecting terminals included in electronic components of various electronic devices. Examples of the electronic components include a semiconductor wafer, a rigid substrate, and a flexible substrate. Is mentioned.
<Method for Forming Connection Terminal of the Present Invention>
Next, the case where the connection part 81 and the sealing layer 80 are formed using the connection terminal forming method of the present invention will be described.

  In this case, first, the connection terminal 85 and the reinforcing layer 86 are formed on the surface on the terminal 21 side of the semiconductor chip 20 by applying the connection terminal forming method of the present invention, and then the connection terminal 85 and the reinforcing layer 86. By connecting (mounting) the semiconductor chip 20 provided with to the surface of the interposer 30 on the side of the terminal 41, the connecting portion 81 and the sealing layer 80 are formed.

  Hereinafter, a method for forming the connection terminal 85 and the reinforcing layer 86 on the surface on the terminal 21 side of the semiconductor chip 20 by applying the connection terminal forming method of the present invention will be described in detail.

  FIG. 5 is a longitudinal sectional view for explaining a method of forming a connection terminal corresponding to a terminal included in a semiconductor chip using the connection terminal forming method of the present invention. In the following description, the upper side in FIG. 5 is referred to as “upper” and the lower side is referred to as “lower”.

  In the method of forming the connection terminal 85 and the reinforcing layer 86 described below, there are an arrangement step of arranging the conductive connection sheet 1 on the surface of the semiconductor chip 20 on the terminal 21 side and a heating step of heating the conductive connection sheet 1. is doing.

  In addition, when forming the connection terminal 85 and the reinforcement layer 86, when the resin composition contained in the metal particle content layers 11 and 13 with which the conductive connection sheet 1 is provided is composed of a curable resin composition, and a thermoplastic resin. The formation method is slightly different from the case of the composition. Therefore, in the following, the case where the resin composition contained in the metal particle-containing layers 11 and 13 is composed of a curable resin composition is referred to as a third embodiment, and the case where the resin composition is composed of a thermoplastic resin composition is referred to as a fourth embodiment. Each embodiment will be described as a form.

<< Third Embodiment >>
In 3rd Embodiment with which the resin composition contained in the metal particle content layers 11 and 13 with which the conductive connection sheet 1 is provided is composed of a curable resin composition, the conductive connection sheet 1 is formed on the surface of the semiconductor chip 20 on the terminal 21 side. And a heating step of heating the conductive connection sheet 1 at a temperature that is not lower than the melting point of the metal layer 12 and at which the curing of the curable resin composition constituting the metal particle-containing layers 11 and 13 is not completed. Have.

Hereinafter, each process is explained in full detail.
[1] Arrangement Step First, as shown in FIG. 5A, a semiconductor chip 20 having terminals 21 on the lower surface side is prepared.

  Next, the conductive connection sheet 1 is thermocompression-bonded (arranged) to the surface on the terminal 21 side of the semiconductor chip 20 using an apparatus such as a roll laminator or a press.

[2] Heating step Next, in the arrangement step [1], the conductive connection sheet 1 (metal layer 12) arranged on the surface on the terminal 21 side of the semiconductor chip 20 is as shown in FIG. Heating is performed at a temperature equal to or higher than the melting point of the metal layer 12 and the metal particles 40.

  The temperature for heating the conductive connection sheet 1 is set to the same temperature as the temperature for heating the conductive connection sheet 1 in the heating step [2] of the first embodiment.

  When the conductive connection sheet 1 is heated at such a temperature, the metal layer 12 and the metal particles 40 are melted, and the melted metal layer 12 and the metal particles 40, that is, the low melting point metal material pass through the metal particle-containing layers 11 and 13. You can move.

  At this time, when a compound having a flux function is included in the curable resin composition, even if an oxide film is formed on the surfaces of the metal layer 12 and the metal particles 40 due to the reducing action of the compound having the flux function, This oxide film is removed by reduction. Therefore, the molten metal material is in a state in which wettability is enhanced and metal bonding is promoted, so that the molten metal layer 12 and the metal particles 40 are likely to aggregate on the surface of the terminal 21. .

  Further, even if an oxide film is formed on the surface of the terminal 21, this oxide film is also removed by the reducing action of the compound having a flux function, and its wettability is enhanced. As a result, metal bonding with the metal material is promoted, and from this point of view, the molten metal layer 12 easily aggregates on the surface of the terminal 21.

  From the above, the molten metal material constituting the metal layer 12 and the metal particles 40 moves in the metal particle containing layers 11 and 13, that is, in the curable resin component, and selectively aggregates on the surface of the terminal 21. .

  At this time, in the molten metal layer 12 and the metal particles 40, the size of the metal particles 40 is smaller, and the metal particles 40 included in the first metal particle-containing layer 11 are more than the metal layer 12. Since it is located proximal to the terminal 21, first, the molten metal particles 40 included in the first metal particle-containing layer 11 move in the first metal particle-containing layer 11 toward the terminal 21. (Aggregation). The movement of the metal particles 40 becomes a starting point (trigger), and the molten metal layer 12 also moves in the first metal particle-containing layer 11 toward the terminal 21, and the movement of the metal layer 12 becomes a large flow. The metal layer 12 is divided into a plurality of pieces. At this time, the metal particles remaining in the first metal particle-containing layer 11 and the metal particles 40 contained in the second metal particle-containing layer 13 are also taken into the moving metal layer 12.

  For these reasons, the molten metal layer 12 and the metal particles 40, that is, the molten metal material are aggregated with high selectivity on the surface of the terminal 21, and finally the surface of the terminal 21 is covered with the metal material. As a result, as shown in FIG. 5C, a connection terminal 85 made of a metal material is formed on the surface of the terminal 21. At this time, the reinforcing layer 86 is formed by surrounding the connection terminal 85 and filling the curable resin composition without containing a metal material. As a result, insulation between the adjacent connection terminals 85 is ensured, so that a short circuit between the adjacent connection terminals 85 is reliably prevented.

  In the method for forming the connection terminal 85 and the reinforcing layer 86 as described above, the metal material heated and melted is selectively aggregated on the terminal 21 to form the connection terminal 85, and the periphery thereof is made of a curable resin composition. A reinforcing layer 86 can be formed. As a result, insulation between adjacent connection terminals 85 can be ensured.

  Further, even in the semiconductor chip 20 having a plurality of terminals 21 at a fine pitch, a plurality of connection terminals 85 can be collectively formed corresponding to the terminals 21.

  In this step [2], the conductive connection sheet 1 and the semiconductor chip 20 may be heated in a pressurized state so that the distance between the conductive connection sheet 1 and the terminal 21 is reduced. For example, the conductive connection sheet 1 and the terminal 21 are heated and pressurized using means such as a known thermocompression bonding device in a direction in which the conductive connection sheet 1 and the semiconductor chip 20 in FIG. Since the distance can be controlled to be constant, it is possible to further enhance the aggregating ability of the molten metal material on the surface of the terminal 21.

  Furthermore, when applying pressure or heating, an ultrasonic wave or an electric field may be applied, or special heating such as laser or electromagnetic induction may be applied.

  The connection terminal 85 and the reinforcing layer 86 are formed through the process [1] and the process [2] as described above. That is, the method for forming the connection terminal and the reinforcing layer of the present invention is applied to the arranging step [1] and the heating step [2] for forming the connecting terminal 85 and the reinforcing layer 86.

  In the case where a curable resin component is used as the resin component contained in the metal particle-containing layers 11 and 13 as in this embodiment, the curable resin composition is not completely cured in the heating step [2]. It is preferable to keep the state. Thus, when the semiconductor chip 20 provided with the connection terminals 85 and the reinforcing layer 86 is mounted on the surface of the interposer 30 on the terminal 41 side, the reinforcing layer 86 is heated to be in a molten state again. Will be able to.

  As described above, when the connection terminal 85 is formed on the surface on the terminal 21 side of the semiconductor chip 20 using the conductive connection sheet 1, the conductive connection sheet 1 is arranged and heated in a portion where the connection terminal 85 is to be formed. By doing so, the molten metal layer 12 and the metal particles 40 are selectively aggregated on the terminal 21, and as a result, the connection terminal 85 is formed.

  By connecting the semiconductor chip 20 provided with the connection terminal 85 and the reinforcing layer 86 on the surface of the interposer 30 on the terminal 41 side, the connection terminal 85 and the reinforcing layer 86 are heated to connect the semiconductor chip 20. Since the terminal 85 is in a molten state again, the connection portion 81 and the sealing layer 80 can be formed between the semiconductor chip 20 and the interposer 30 by cooling thereafter.

  And in this embodiment, since the curable resin component is contained as a resin component contained in the metal particle containing layers 11 and 13 and this is not fully cured, the curable resin composition is sufficient. The sealing layer 80 is fixed by curing. Thereby, the mechanical strength of the connection part 81 and the sealing layer 80 can be raised.

<< Fourth Embodiment >>
In 4th Embodiment by which the resin composition contained in the metal particle content layers 11 and 13 with which the conductive connection sheet 1 is provided is composed of a thermoplastic resin composition, the conductive connection sheet 1 is formed on the surface of the semiconductor chip 20 on the terminal 21 side. And a heating step of heating the conductive connection sheet 1 at a temperature that is equal to or higher than the melting point of the metal layer 12 and softens the thermoplastic resin composition constituting the metal particle-containing layers 11 and 13. ing.

Hereinafter, each process is explained in full detail.
[1] Arrangement Step In the present embodiment in which the metal particle-containing layers 11 and 13 are made of a thermoplastic resin composition, the third embodiment in which the metal particle-containing layers 11 and 13 are made of a thermosetting resin composition. Similarly to the embodiment, the conductive connection sheet 1 is thermocompression bonded (arranged) to the terminal 21 side of the semiconductor chip 20.

[2] Heating step Next, in the arrangement step [1], the conductive connection sheet 1 (metal layer 12) arranged on the surface on the terminal 21 side of the semiconductor chip 20 is as shown in FIG. Heating is performed at a temperature equal to or higher than the melting point of the metal layer 12 and the metal particles 40.

  The temperature for heating the conductive connection sheet 1 is set to the same temperature as the temperature for heating the conductive connection sheet 1 in the heating step [2] of the first embodiment.

  When the conductive connection sheet 1 is heated at such a temperature, the metal layer 12 and the metal particles 40 are melted, and the melted metal layer 12 and the metal particles 40, that is, the low melting point metal material pass through the metal particle-containing layers 11 and 13. You can move.

  At this time, if a compound having a flux function contained in the thermoplastic resin composition is included, it is assumed that an oxide film is formed on the surfaces of the metal layer 12 and the metal particles 40 due to the reducing action of the compound having the flux function. However, the oxide film is removed by being reduced. Therefore, the molten metal material is in a state in which wettability is enhanced and metal bonding is promoted, so that the molten metal layer 12 and the metal particles 40 are likely to aggregate on the surface of the terminal 21. .

  Further, even if an oxide film is formed on the surface of the terminal 21, this oxide film is also removed by the reducing action of the compound having a flux function, and its wettability is enhanced. As a result, metal bonding with the metal material is promoted, and from this point of view, the molten metal layer 12 easily aggregates on the surface of the terminal 21.

  In the present invention, since the metal layer 12 has a layer shape (foil shape), when the molten metal layer 12 is divided into a plurality of pieces and aggregates on the surface of the terminal 21, a part of the metal layer 12 is a terminal 21. It can be suppressed or prevented accurately from remaining in the metal particle containing layers 11 and 13 without agglomerating. Therefore, it is possible to reliably prevent the occurrence of a leakage current due to a part of the metal layer 12 remaining in the reinforcing layer 86.

  From the above, the molten metal material constituting the metal layer 12 and the metal particles 40 moves in the metal particle containing layers 11 and 13, that is, in the thermoplastic resin component, and selectively aggregates on the surface of the terminal 21. .

  At this time, in the molten metal layer 12 and the metal particles 40, the size of the metal particles 40 is smaller, and the metal particles 40 included in the first metal particle-containing layer 11 are more than the metal layer 12. Since it is located proximal to the terminal 21, first, the molten metal particles 40 included in the first metal particle-containing layer 11 move in the first metal particle-containing layer 11 toward the terminal 21. (Aggregation). The movement of the metal particles 40 becomes a starting point (trigger), and the molten metal layer 12 also moves in the first metal particle-containing layer 11 toward the terminal 21, and the movement of the metal layer 12 becomes a large flow. The metal layer 12 is divided into a plurality of pieces. At this time, the metal particles remaining in the first metal particle-containing layer 11 and the metal particles 40 contained in the second metal particle-containing layer 13 are also taken into the moving metal layer 12.

  For these reasons, the molten metal layer 12 and the metal particles 40, that is, the molten metal material are aggregated with high selectivity on the surface of the terminal 21, and finally the surface of the terminal 21 is covered with the metal material. As a result, as shown in FIG. 5C, a connection terminal 85 made of a metal material is formed on the surface of the terminal 21. At this time, by cooling the thermoplastic resin composition, the reinforcing layer 86 is formed by surrounding the connection terminal 85 and solidifying with the thermoplastic resin composition without containing a metal material. As a result, insulation between the adjacent connection terminals 85 is ensured, so that a short circuit between the adjacent connection terminals 85 is reliably prevented.

  In the method of forming the connection terminal 85 and the reinforcing layer 86 as described above, the metal material heated and melted is selectively aggregated on the terminal 21 to form the connection terminal 85, and the periphery thereof is formed of the thermoplastic resin composition. A reinforcing layer 86 can be formed. As a result, insulation between adjacent connection terminals 85 can be ensured.

  Further, even in the semiconductor chip 20 having a plurality of terminals 21 at a fine pitch, a plurality of connection terminals 85 can be collectively formed corresponding to the terminals 21.

  The connection terminal 85 and the reinforcing layer 86 are formed through the process [1] and the process [2] as described above. That is, the method for forming the connection terminal and the reinforcing layer of the present invention is applied to the arranging step [1] and the heating step [2] for forming the connecting terminal 85 and the reinforcing layer 86.

  As described above, when the connection terminal 85 is formed on the surface on the terminal 21 side of the semiconductor chip 20 using the conductive connection sheet 1, the conductive connection sheet 1 is arranged and heated in a portion where the connection terminal 85 is to be formed. By doing so, the molten metal layer 12 and the metal particles 40 are selectively aggregated on the terminal 21, and as a result, the connection terminal 85 is formed.

  By connecting the semiconductor chip 20 provided with the connection terminal 85 and the reinforcing layer 86 on the surface of the interposer 30 on the terminal 41 side, the connection terminal 85 and the reinforcing layer 86 are heated to connect the semiconductor chip 20. Since the terminal 85 is in a molten state again, the connection portion 81 and the sealing layer 80 can be formed between the semiconductor chip 20 and the interposer 30 by cooling thereafter.

  And in this embodiment, since a thermoplastic resin component is contained as a resin component contained in the metal particle containing layers 11 and 13, the thermoplastic resin composition can be solidified by cooling as described above. Thereby, since the sealing layer 80 is fixed, the mechanical strength of the connection part 81 and the sealing layer 80 can be improved.

  Through the steps described above, the connection terminal 85 is formed on the surface of the semiconductor chip 20 on which the terminal 21 is provided, and the reinforcing layer 86 is formed so as to surround the connection terminal 85.

  In the third embodiment and the fourth embodiment, the case where the connection terminal forming method of the present invention is applied when the connection terminal 85 is formed so as to correspond to the terminal 21 included in the semiconductor chip 20 has been described. The present invention is not limited to this case, and can be applied to the case where connection terminals (bumps) are formed on terminals (electrodes) included in electronic parts used in various electronic devices. Examples of various electronic parts include semiconductors A wafer, a flexible substrate, etc. are mentioned.

  Moreover, although the said 1st-4th embodiment demonstrated the case where the connection part 81 and the sealing layer 80 with which the semiconductor device 10 is provided were formed using the conductive connection sheet 1 shown in FIG. The configuration is not limited to this case, and for example, a conductive connection sheet 1 ′ having the following configuration can also be used.

  FIG. 6 is a longitudinal sectional view showing another configuration example of the conductive connection sheet of the present invention. In the following description, the upper side in FIG. 6 is referred to as “upper” and the lower side is referred to as “lower”.

  Hereinafter, the conductive connection sheet 1 ′, which is another configuration example of the conductive connection sheet of the present invention, will be described, focusing on the differences from the above-described conductive connection sheet 1, and the same matters will be described. Omitted.

  In the conductive connection sheet 1 ′, the first resin composition layer 51 and the second resin composition layer 53 that do not include the metal particles 40 and contain the above-described resin component, that is, the above-described first metal particle-containing content. Except having the 1st resin composition layer 51 and the 2nd resin composition layer 53 by which addition of the metal particle 40 to the layer 11 and the 2nd metal particle content layer 13 was abbreviate | omitted, the electrically conductive connection sheet mentioned above 1 is the same configuration.

  In other words, in the conductive connection sheet 1 ′, the first resin composition layer 51 and the first metal particle-containing layer 11 and the second metal particle-containing layer 13 on the surface opposite to the metal layer 12, respectively. The configuration is the same as that of the conductive connection sheet 1 described above except that the second resin composition layer 53 is laminated.

  Hereinafter, these layers will be described. Since both the first resin composition layer 51 and the second resin composition layer 53 have the same configuration, the first resin composition layer 51 is the same as the first resin composition layer 51. Explain to the representative.

  The first resin composition layer 51 is a layer composed mainly of a resin composition containing a resin component, in which the addition of the metal particles 40 is omitted.

  As a resin composition, what was mentioned as a resin composition of the metal particle content layer 11 with which the electrically conductive connection sheet 1 mentioned above is equipped can be used similarly.

  Specifically, as the resin composition, for example, as described above, a curable resin component, a compound having a flux function, a thermoplastic resin component, a film-forming resin component, a curing agent, a curing accelerator, a silane coupling agent, Examples thereof include a plasticizer, a stabilizer, a tackifier, a lubricant, an antioxidant, a filler, an antistatic agent, and a pigment.

  The connection method between terminals of the present invention and the method of forming connection terminals of the present invention are also applied to the conductive connection sheet 1 ′ further including the first resin composition layer 51 and the second resin composition layer 53 having such a configuration. Thus, the connection portion 81 and the sealing layer 80 included in the semiconductor device 10 can be reliably formed.

  In addition, by appropriately setting the type of the resin composition included in the first resin composition layer 51, the insulating characteristics and the like of the formed sealing layer 80 can be easily adjusted. Furthermore, by appropriately setting the thickness of the first resin composition layer 51, an appropriate amount of the resin composition can be more reliably applied to the region surrounding the connection portion 81 between the semiconductor chip 20 and the interposer 30. Since it can be filled (supplied), the sealing layer 80 can be formed more reliably without voids remaining in such regions.

  In the present configuration, the second resin composition layer 53 may be of the same configuration as the first resin composition layer 51 described above, and the second resin composition layer 53 may be the first resin composition layer 53. The resin composition layer 51 may have the same composition or a different composition.

  Further, the conductive connection sheet 1 ′ only needs to include at least one resin composition layer, and one of the first resin composition layer 51 and the second resin composition layer 53 is omitted. In addition, a configuration including a third resin composition layer and a fourth resin composition layer different from the first resin composition layer 51 and the second resin composition layer 53 may be used. Further, the positions of the first resin composition layer 51 and the second resin composition layer 53 are not particularly limited. For example, the first resin composition layer 51 and the second resin composition layer 53 are respectively It may be provided between the metal layer 12 and the first metal particle-containing layer 11 and between the metal layer 12 and the second metal particle-containing layer 13.

  As described above, the conductive connection sheet, the connection method between terminals, the formation method of the connection terminal, the semiconductor device, and the electronic device of the present invention have been described, but the present invention is not limited to these.

  For example, the configuration of each part of the conductive connection sheet of the present invention can be replaced with an arbitrary one that can exhibit the same function, or an arbitrary configuration can be added.

  Moreover, arbitrary processes may be added to the connection method between terminals and the formation method of a connection terminal of this invention as needed.

DESCRIPTION OF SYMBOLS 1, 1 'Conductive connection sheet 10 Semiconductor device 11 1st metal particle content layer 12 Metal layer 13 2nd metal particle content layer 20 Semiconductor chip 21 Terminal 30 Interposer 40 Metal particle 41 Terminal 51 1st resin composition layer 53 Second resin composition layer 70 Bump 80 Sealing layer 81 Connection portion 85 Connection terminal 86 Reinforcing layer

Claims (18)

  A conductive material comprising a laminate comprising a metal particle comprising a metal particle composed of a low melting point metal material and a resin component, and a metal layer comprising the metal material having a low melting point. Connection sheet.   2. The conductive connection sheet according to claim 1, wherein the metal particle-containing layer includes a resin composition containing the resin component and a compound having a flux function, and the metal particles.   The conductive connection sheet according to claim 2, wherein the compound having a flux function contains a compound having at least one of a phenolic hydroxyl group and a carboxyl group. The conductive connection sheet according to claim 2 or 3, wherein the compound having the flux function contains a compound represented by the following general formula (1).
_{HOOC- (CH 2) n-COOH} ····· (1)
(In Formula (1), n is an integer of 1-20.) The conductive connection sheet according to claim 2 or 3, wherein the compound having the flux function contains at least one of compounds represented by the following general formula (2) and the following general formula (3).

[Wherein, R ^{1 to} R ⁵ are each independently a monovalent organic group, and at least one of R ^{1 to} R ⁵ is a hydroxyl group. ]

[Wherein, R ^{6 to} R ²⁰ are each independently a monovalent organic group, and at least one of R ^{6 to} R ²⁰ is a hydroxyl group or a carboxyl group. ]   In the said resin composition, content of the compound which has the said flux function is 1 to 50 weight%, The electrically conductive connection sheet in any one of Claim 2 thru | or 5.   The metal particles include tin (Sn), lead (Pb), silver (Ag), bismuth (Bi), indium (In), zinc (Zn), nickel (Ni), antimony (Sb), iron (Fe), 7. An alloy of at least two metals selected from the group consisting of aluminum (Al), gold (Au), germanium (Ge), and copper (Cu), or a simple substance of tin. Conductive connection sheet.   The conductive connection sheet according to claim 1, wherein the metal particles have a content of 1 to 70 wt% in the metal particle-containing layer.   The conductive connection sheet according to claim 1, wherein the metal particles have an average particle diameter of 0.1 to 50 μm.   The metal layer includes tin (Sn), lead (Pb), silver (Ag), bismuth (Bi), indium (In), zinc (Zn), nickel (Ni), antimony (Sb), iron (Fe), 10. The alloy of at least two or more metals selected from the group consisting of aluminum (Al), gold (Au), germanium (Ge), and copper (Cu), or a simple substance of tin. Conductive connection sheet.   The laminate is composed of two metal particle-containing layers and one metal layer, and the metal particle-containing layer, the metal layer, and the metal particle-containing layer are laminated in this order. The conductive connection sheet according to any one of 10.   The conductive laminate sheet according to any one of claims 1 to 11, wherein the laminate further includes a resin composition layer that does not include the metal particles and includes the resin component.   The conductive connection sheet according to any one of claims 1 to 12, wherein the conductive connection sheet is disposed between opposing terminals, the melting point of the metal material is not lower than the melting point of the metal material, and the resin composition is not completely cured. A method for connecting terminals, comprising: a heating step of heating the conductive connection sheet; and a curing step of curing the resin composition.   The conductive connection sheet according to any one of claims 1 to 12, wherein the conductive connection sheet is disposed between opposing terminals, and the conductive connection sheet is at a temperature equal to or higher than a melting point of the metal material and the resin composition is softened. A method for connecting terminals, comprising: a heating step of heating a sheet; and a solidification step of solidifying the resin composition.   An arrangement step of disposing the conductive connection sheet according to any one of claims 1 to 12 on a substrate having a terminal, a temperature that is equal to or higher than a melting point of the metal material, and the curing of the resin composition is not completed. And a heating step of heating the conductive connection sheet.   An arrangement step of disposing the conductive connection sheet according to any one of claims 1 to 12 on a base material having terminals, a melting point of the metal material, and a temperature at which the resin composition is softened. And a heating step of heating the conductive connection sheet.   Opposite terminals are electrically connected to each other through a connection portion formed using the conductive connection sheet according to any one of claims 1 to 12.   Opposite terminals are electrically connected through a connection portion formed using the conductive connection sheet according to any one of claims 1 to 12.

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