JP2014082465A - Conductive connection sheet, connection method between terminals, formation method of connection terminal, semiconductor device and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a conductive connection sheet having high electrical reliability in which a melting metallic material exhibits excellent self-cohesion, and short circuit between adjoining terminals can be prevented, and to provide a connection method between terminals using the conductive connection sheet, a formation method of a connection terminal, a highly reliable semiconductor device, and an electronic apparatus.SOLUTION: A conductive connection sheet 1 is used to form a connection for electrically connecting the terminal of an electronic component. The conductive connection sheet consists of a laminate including a resin composition layer composed of a resin composition containing resin, and a metal layer composed of a metallic material having a low melting point. The metallic material has surface tension of 300-600 mN/m at T+20°C measured by a falling drop method.

Description

  The present invention relates to a conductive connection sheet, a connection method between terminals, a method for forming a connection terminal, a semiconductor device, and an electronic apparatus.

  In recent years, along with the demand for higher functionality and miniaturization of electronic equipment, the pitch between connection terminals in electronic materials is becoming increasingly narrow, and the connection between terminals in a fine wiring circuit is also becoming more sophisticated.

  As the inter-terminal connection method, for example, a flip chip connection technique in which a large number of terminals are collectively connected using an anisotropic conductive adhesive or an anisotropic conductive film when an IC chip is electrically connected to a circuit board. It has been known. Such an anisotropic conductive adhesive or anisotropic conductive film is a film or paste in which conductive particles are dispersed in an adhesive mainly composed of a thermosetting resin, and the electronic member to be connected thereto By disposing them in between and thermocompression bonding, a large number of opposing terminals can be connected together, while insulation between adjacent terminals can be ensured by the resin in the adhesive.

  However, in the anisotropic conductive adhesive or anisotropic conductive film, it is difficult to control the aggregation of the conductive particles, and the conductive particles and the terminals or the conductive particles face each other without sufficiently contacting each other. Some of the terminals do not conduct, or conductive particles remain in the resin (insulating region) other than between the opposing terminals (conducting region), and insulation between adjacent terminals is not sufficiently secured. There was a problem. For this reason, it was difficult to cope with further narrowing of the pitch between terminals.

  On the other hand, when manufacturing a connection terminal on an electronic member, conventionally, a solder paste is printed on a substrate provided with a metal pad, and the solder paste is heated and melted using a solder reflow apparatus or the like. However, in this method, when the connection terminals have a narrow pitch, the cost of the mask used when printing the solder paste increases, and if the connection terminals are small, printing may not be possible.

  Also, in the method in which solder balls are mounted on the connection terminals and the solder balls are heated and melted using a solder reflow device or the like, if the connection terminals are small, the manufacturing cost of the solder balls increases, and the solder balls having a small diameter In some cases, it was technically difficult to fabricate.

JP-A 61-276873 JP 2004-260131 A

  In order to solve such problems, a conductive connection sheet composed of a laminate including a resin composition layer containing a curable resin and a metal layer composed of a low melting point metal material has been studied. Yes.

When the low-melting-point metal material is heated at a temperature equal to or higher than the melting point in a state where the conductive connection sheet having such a configuration is disposed between the facing terminals, the molten metal material selectively aggregates between the facing terminals, Since the region excluding the space between the terminals is filled with the resin, a large number of terminals facing each other can be connected together by a metal material selectively aggregated, and further included in the resin composition. The resin ensures insulation between adjacent terminals.

  However, if the self-cohesion force of the molten metal material is inappropriate, the molten metal material itself cannot sufficiently aggregate, and the metal material located relatively far from the terminal aggregates on the terminal. In some cases, the resin composition could not be retained. As a result, there is a possibility that leakage may occur between adjacent terminals, and there is a problem that sufficient insulation cannot be secured.

  Therefore, an object of the present invention is to use an electrically reliable conductive connection sheet, such a conductive connection sheet, because a molten metal material has an excellent self-cohesive force and can prevent a short circuit between adjacent terminals. It is an object to provide a method for connecting terminals, a method for forming connection terminals, a highly reliable semiconductor device, and an electronic device.

Such an object is achieved by the present invention described in the following (1) to (12).
(1) Used to form a connection portion that is electrically connected to a terminal of an electronic component, and is composed of a resin composition layer composed of a resin composition containing a resin and a metal material having a melting point T ° C. A conductive connection sheet comprising a laminate comprising a metal layer,
The metal material has a surface tension at T + 20 ° C. measured by a dropping method of 300 mN / m to 600 mN / m.

  (2) The conductive connection sheet according to (1), wherein the metal material is mainly composed of Sn or an Sn-based alloy.

  (3) The conductive connection sheet according to any one of (1) and (2), wherein the resin composition is a thermosetting resin composition containing a thermosetting resin as the resin.

  (4) The said thermosetting resin composition is a conductive connection sheet as described in said (3) whose gel time in the said T + 20 degreeC is 30 s-600 s.

  (5) The said thermosetting resin composition is a conductive connection sheet as described in said (3) or (4) whose melt viscosity after 10 s in the said T + 20 degreeC is 0.01 Pa.s-100 Pa.s.

  (6) Disposing on the electronic component having a terminal region where the terminal is disposed and heating to melt the metal material of the metal layer, and agglomerate the molten metal around the terminal. The conductive connection sheet according to any one of (1) to (5), which is used to form the connection portion.

  (7) In the terminal region, when the area of the connecting portion in plan view is S3 and the area of the terminal in plan view is S2, the area ratio S3 / S2 is 0.5 to 4 above (6 ) Conductive connection sheet.

  (8) The above resin composition is the thermosetting resin composition, and the metal layer aggregates around the terminals within the gel time at T + 20 ° C. of the thermosetting resin composition. The conductive connection sheet according to (6) or (7).

  (9) An arrangement step of arranging the conductive connection sheet according to any one of (1) to (8) between the terminal of the electronic component and the terminal of the counter electronic component, and the metal material A heating step of heating the conductive connection sheet at a temperature at which the resin composition layer is deformable and a curing / solidification step of curing or solidifying the resin composition layer. Connection method between terminals.

  (10) An arrangement step of disposing the conductive connection sheet according to any one of (1) to (8) on the electronic component having the terminal, a melting point of the metal material, and the resin. And a heating step of heating the conductive connection sheet at a temperature at which the composition layer can be deformed.

  (11) The terminal of the electronic component and the terminal of the counter electronic component are electrically connected via a connection portion formed using the conductive connection sheet according to any one of (1) to (8). A semiconductor device characterized by being connected to the semiconductor device.

  (12) The terminal of the electronic component and the terminal of the counter electronic component are electrically connected via a connection portion formed using the conductive connection sheet according to any one of (1) to (8). An electronic device characterized by being connected to

  When the conductive connection sheet of the present invention is used for forming a connection part that electrically connects terminals, a molten metal obtained by heating and melting the metal material aggregates between the terminals, thereby forming a connection part. The sealing layer comprised with the resin composition can be formed in the circumference | surroundings. At this time, since the metal material is excellent in self-cohesive force, the metal material can be prevented from remaining in the resin composition. As a result, since the sealing layer excellent in insulation can be formed, a short circuit between adjacent terminals can be more reliably prevented.

  Furthermore, when the conductive connection sheet of the present invention is used to form a connection terminal that electrically connects terminals, a molten metal in which a metal material is heated and melted aggregates between the terminals to form a connection terminal. The reinforcement layer comprised with the resin composition can be formed in the circumference | surroundings. At this time, since the metal material is excellent in self-cohesive force, the metal material can be prevented from remaining in the resin composition. As a result, a reinforcing layer having excellent insulating properties can be formed, so that a short circuit between adjacent terminals can be more reliably prevented.

The schematic diagram which shows an example of the semiconductor device manufactured using the electrically conductive connection sheet of this invention (FIG. 1 (a) is a top view, FIG.1 (b) is the AA line cross section in FIG. 1 (a). Figure). It is a longitudinal section showing an embodiment of a conductive connection sheet of the present invention. It is sectional drawing which shows the dripping method which measures the surface tension of the metal material which comprises the metal layer with which the conductive connection sheet of this invention is provided. It is a top view which shows the other structural example of the metal layer with which the conductive connection sheet of this invention is provided. It is a longitudinal cross-sectional view for demonstrating the arrangement | positioning process in the method of manufacturing the connection part and sealing layer with which a semiconductor device is provided using the conductive connection sheet of this invention. It is a longitudinal cross-sectional view for demonstrating the heating process in the method of manufacturing the connection part and sealing layer with which a semiconductor device is provided using the conductive connection sheet of this invention. It is a longitudinal cross-sectional view for demonstrating the hardening process in the method of manufacturing the connection part and sealing layer with which a semiconductor device is provided using the conductive connection sheet of this invention. It is a longitudinal cross-sectional view for demonstrating the method of forming a connection terminal corresponding to the terminal with which a semiconductor chip is provided using the formation method of the connection terminal of this invention.

  Hereinafter, a conductive connection sheet, a connection method between terminals, a connection terminal formation method, a semiconductor device, and an electronic apparatus according to the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

  First, prior to describing the conductive connection sheet of the present invention, a semiconductor device manufactured using the conductive connection sheet of the present invention will be described.

<Semiconductor device>
1A and 1B are schematic views showing an example of a semiconductor device manufactured using the conductive connection sheet of the present invention (FIG. 1A is a plan view, and FIG. 1B is A in FIG. 1A). -A line sectional view). In the following description, the upper side in FIG. 1 is referred to as “upper” and the lower side is referred to as “lower”.

  A semiconductor device 10 shown in FIG. 1 includes a semiconductor chip (electronic component) 20, an interposer (substrate) 30 that supports the semiconductor chip 20, and a plurality of conductive bumps (terminals) 70.

  The planar view shape of the semiconductor chip 20 is generally a substantially quadrangular shape as shown in FIG. The semiconductor chip 20 has a plurality of terminals 21 on its lower surface (one surface), and the terminals 21 are made of a conductive metal material such as copper, for example.

  Further, the plurality of terminals 21 may be distributed over the entire surface of the semiconductor chip 20 in a plan view, for example, as shown in FIG. It is not limited to those arranged on the entire surface, but may be arranged partially according to the purpose and application.

  In the present specification, a region in which a terminal group including the plurality of terminals 21 is provided is referred to as a “terminal region 211”.

  Therefore, in the semiconductor device 10 shown in FIG. 1, the terminal region 211 has an inner portion of the outline connecting the outermost terminals 21 on the semiconductor device 20, that is, a shape substantially equal to the semiconductor device 20, or more Has a substantially square shape with a slightly smaller shape. Note that the terminal region 211 indicates a region where a terminal group in which the terminals 21 are arranged is provided, so that the shape of the terminal region 211 is not limited to the substantially square shape as described above, and the shape is appropriately determined depending on the arrangement of the terminals 21. Is set.

  The interposer 30 is an insulating substrate and is made of various resin materials such as polyimide, epoxy, cyanate, bismaleimide triazine (BT resin). The plan view shape of the interposer 30 is generally a substantially square shape as shown in FIG. Furthermore, the interposer 30 has a plurality of terminals 41 made of a conductive metal material such as copper, for example, on the upper surface (one surface).

  In the semiconductor device 10, the terminal 41 is provided on the upper surface of the interposer 30 so as to correspond to the terminal 21 provided on the semiconductor chip 20. The corresponding terminal 21 and terminal 41 are electrically connected through the connection portion 81.

  In the present embodiment, as shown in FIG. 1, the terminal 41 is configured to protrude from the surface side formed in the interposer 30. The terminal 21 is also configured to protrude from the semiconductor chip 20.

The interposer 30 is formed with a plurality of vias (through holes: through holes) penetrating in the thickness direction.

  Each bump 70 has one end (upper end) electrically connected to a part of the terminal 41 via each via 60, and the other end (lower end) protrudes from the lower surface (the other surface) of the interposer 30. ing.

  A portion of the bump 70 protruding from the interposer 30 has a substantially spherical shape (Ball shape).

  The bumps 70 are mainly composed of a brazing material such as solder, silver brazing, copper brazing, or phosphor copper brazing.

  Further, a gap between the semiconductor chip 20 and the interposer 30 is filled with a sealing material made of various resin materials, and a sealing layer 80 is formed by a cured product of this sealing material. . The sealing layer 80 has a function of improving the bonding strength between the semiconductor chip 20 and the interposer 30 and a function of preventing entry of foreign matter, moisture, and the like into the gap.

  In the semiconductor device 10 having such a configuration, the conductive connection sheet of the present invention is applied to the formation of the connection portion 81 and the sealing layer 80.

Hereinafter, the conductive connection sheet of the present invention will be described.
<Conductive connection sheet>
FIG. 2 is a longitudinal sectional view showing an embodiment of the conductive connection sheet of the present invention, and FIG. 3 is a sectional view showing a dropping method for measuring the surface tension of the metal material constituting the metal layer provided in the conductive connection sheet of the present invention. FIG. 4 is a plan view showing another configuration example of the metal layer provided in the conductive connection sheet of the present invention. In the following description, the upper side in FIG. 2 is referred to as “upper” and the lower side is referred to as “lower”.

  The conductive connection sheet of the present invention is used to form a connection part that is electrically connected to a terminal included in an electronic component, and has a resin composition layer composed of a resin composition containing a resin and a melting point of T ° C. It is comprised by the laminated body provided with the metal layer comprised with a metal material, The surface tension in T + 20 degreeC measured by the dripping method is 300 mN / m-600 mN / m.

  When such a conductive connection sheet is used to form a connection portion that electrically connects terminals, a molten metal obtained by heating and melting the metal material aggregates between the terminals, thereby forming a connection portion. The sealing layer comprised with the resin composition can be formed in the circumference | surroundings. At this time, since the metal material is excellent in self-cohesive force, the metal material can be prevented from remaining in the resin composition. As a result, since the sealing layer excellent in insulation can be formed, a short circuit between adjacent terminals can be more reliably prevented.

  Furthermore, when the conductive connection sheet is used to form connection terminals that electrically connect the terminals, the molten metal obtained by heating and melting the metal material aggregates between the terminals, thereby forming the connection terminals. The reinforcement layer comprised with the resin composition can be formed in the circumference | surroundings. At this time, since the metal material is excellent in self-cohesive force, the metal material can be prevented from remaining in the resin composition. As a result, a reinforcing layer having excellent insulating properties can be formed, so that a short circuit between adjacent terminals can be more reliably prevented.

  In the present embodiment, as shown in FIG. 2, in the conductive connection sheet 1, the first resin composition layer 11, the metal layer 12, and the second resin composition layer 13 are joined together in this order. Thus, it is constituted by a laminated body having a three-layer structure laminated.

  In the conductive connection sheet 1 having such a configuration, the first resin composition layer 11 and the second resin composition layer 13 are composed of a resin composition containing a resin, and the metal layer 12 is a low melting point metal material. It is a layer comprised by the comprised metal foil.

  The conductive connection sheet 1 is used to form the connection portion 81 and the sealing layer 80 in the semiconductor device 10 described above. That is, the connection part 81 is formed by the metal layer 12 and the sealing layer 80 is formed by the resin composition layers 11 and 13.

  Hereinafter, although each layer which comprises the conductive connection sheet 1 is demonstrated one by one, about the 1st resin composition layer 11 and the 2nd resin composition layer 13, both are comprised with the resin composition containing curable resin. Therefore, the first resin composition layer 11 will be described as a representative. Hereinafter, the first resin composition layer 11 and the second resin composition layer 13 may be simply referred to as “resin composition layer 11” and “resin composition layer 13”.

<< metal layer 12 >>
The metal layer 12 is made of a low melting point metal material. The metal layer 12 is preferably a metal foil layer made of a metal foil.

  When the metal layer (metal foil layer) 12 is heated to a melting point or higher, it melts, and when the resin composition layers 11 and 13 contain a compound having a flux function, they are included in the resin composition layers 11 and 13. Since the oxide film formed on the surface of the metal layer 12 is removed by the action of the compound having the flux function, the wettability of the molten metal obtained by melting the metal material is improved. Therefore, the molten metal selectively aggregates between the terminals 21 and 41, and finally, the connection portion 81 is formed by the solidified product.

  Here, in the present invention, the metal material constituting the metal layer 12 has a surface tension of 300 mN / m to 600 mN / m at T + 20 ° C. measured by a dropping method. In particular, it is more preferably 330 mN / m to 550 mN / m, and still more preferably 360 mN / m to 500 mN / m.

  When the surface tension of the metal material at T + 20 ° C. is within the above range, the molten metal obtained by melting the metal material has high self-metal internal action due to the interaction with the resin composition layers 11 and 13. For this reason, by trying to reduce the area in contact with the resin composition layers 11 and 13, the self-aggregation force is increased, and self-aggregation occurs. Furthermore, when the surface tension of the metal material at T + 20 ° C. is within the above range, the interaction with the terminals 21 and 41 preferably acts, so that it is more likely to aggregate between the terminals, and the connection portion 81 is more stable. Can be formed.

  Therefore, when the conductive connection sheet 1 having such a metal material is heated to form the connection portion 81 and the sealing layer 80, the molten metal is excellent in self-cohesive force. To do. As the molten metal aggregates in this manner, the self-aggregated molten metal forms a relatively large lump. As a result, the self-aggregated molten metal has an increased chance of contact with the terminals 21 and 41, and at the same time, the interaction with the terminals 21 and 41 preferably acts.

  In addition, when the molten metal is excellent in self-cohesion force in this way, the molten metal present at a location relatively distant from the terminals 21 and 41 does not aggregate in the terminals 21 and 41 and the resin composition contains Can be prevented or suppressed accurately.

On the other hand, when the surface tension of the metal material at T + 20 ° C. is less than the lower limit value, the self-aggregating force is lowered, and there is a possibility that the metal material that cannot be aggregated remains in the resin composition. In addition, when the surface tension of the metal material at T + 20 ° C. exceeds the upper limit, the self-metal internal action of the molten metal is higher than the interaction between the molten metal obtained by melting the metal material and the terminals 21 and 41, and self-aggregation. Since the force becomes too strong, when used for forming the connection portion 81, the metal material may be hardened without being aggregated between the terminals 21 and 41.

  Here, in this invention, the surface tension of the said metal material is measured by the dripping method, and in this specification, this dripping method means the method of measuring as follows.

  First, the metal material that has been subjected to the oxide film removal treatment by the acid cleaning treatment is heated to T + 20 ° C., so that the molten metal material is shown in FIG. 3 under a measurement condition of T + 20 ° C. in a nitrogen atmosphere. As shown, a molten metal in which a metal material is melted is dropped from a nozzle having an outer radius of 5 mm. And surface tension (gamma) is calculated | required using the following numerical formula (A) from the weight of the dripped molten metal, ie, a molten droplet, and the shape of a nozzle.

mg = 2πrγ (A)
(In the formula, m represents the mass of a dropped metal material, g represents the acceleration of gravity, and r represents the outer radius of the nozzle.)
Here, the reason why the temperature when measuring the surface tension of the metal material is T + 20 ° C. is that the heating temperature when forming the connecting portion 81 by heating and melting the metal material is around T + 20 ° C. is there.

  The metal material is preferably a low-melting-point metal material, and the melting point T is preferably 100 ° C to 330 ° C, more preferably 110 ° C to 300 ° C, and 120 ° C to 280 ° C. Is more preferable. When the melting point of the metal material exceeds the upper limit, when the connection part 81 is formed by heating the metal material to a temperature equal to or higher than the melting point, damage to various members of the semiconductor device 10 due to thermal history is caused by the heating temperature being too high. May occur. On the other hand, when the melting point of the metal material is less than the lower limit value, the thermal damage as described above is unlikely to occur, but when the semiconductor device 10 having the connection portion 81 is used at a high temperature, for example, in a car in summer, etc. In this case, the connection portion 81 is easily melted unintentionally, and the bonding force may be reduced.

  In addition, melting | fusing point T of a metal material, ie, the metal layer 12, can be measured with a differential scanning calorimeter (DSC).

  Such a metal material is not particularly limited as long as the oxide film formed on the surface of the metal layer 12 can be removed by the flux action of the compound having the above-described melting point and the flux function. For example, tin (Sn), lead (Pb), silver (Ag), bismuth (Bi), indium (In), zinc (Zn), nickel (Ni), antimony (Sb), iron (Fe), aluminum ( Examples thereof include an alloy of at least two kinds of metals selected from the group consisting of Al), gold (Au), germanium (Ge), and copper (Cu), or a simple substance of tin.

  Among such low melting point metal materials, those mainly composed of Sn or Sn-based alloy are preferable. When Sn or an Sn-based alloy is used as the main material, the surface tension of the metal material can be easily set within the range as described above. In addition, since Sn or Sn-based alloy has excellent heat fatigue resistance and mechanical strength, the connection part 81 formed of such a metal material has excellent heat fatigue resistance and mechanical strength. It will be a thing.

When an Sn-based alloy is used as the low melting point metal material, the tin content is preferably 15% by weight or more and less than 100% by weight, more preferably 20% by weight or more and less than 100% by weight, More preferably, it is at least 100% by weight. As described above, by setting the Sn-based alloy content of tin within the above range, the surface tension of the metal material can be set within the above-described range, but it becomes easier.

  Specifically, examples of the Sn-based alloy include Sn-5.0Sb (melting point 238 ° C.), Sn-0.7Cu (melting point 227 ° C.), Sn-0.7Cu-0.1Co (melting point 227 ° C.), Sn -0.7Cu-0.3Ag (melting point 217 ° C), Sn-3.5Ag (melting point 221 ° C), Sn-3.0Ag-0.5Cu (melting point 217 ° C), Sn-9.0Zn (melting point 199 ° C) Sn-8.0Zn-3.0Bi (melting point 190 ° C.), Sn-3.5Ag-3.0In-0.5Bi (melting point 193 ° C.), Sn-4.0In-3.5Ag-0.5Bi (melting point) 207 ° C), Sn-8.0In-3.5Ag-0.5Bi (melting point 196 ° C), Au-20Sn (melting point 280 ° C), Sn-3.0Ag-0.5Cu-4.0In-0.2 ( Co, Ti) (melting point 207 ° C.), Sn-3.0Ag-10 u (mp 230 ℃), Sn-37Pb (melting point 183 ℃), Sn-58Bi (melting point 139 ℃), Sn-52In (melting point 119 ° C.), and the like.

  The thickness of the metal layer 12 made of such a metal material is not particularly limited, but is appropriately set according to the gap between the opposing terminals 21 and 41, the separation distance between the adjacent terminals 21 and 41, and the like.

  For example, as in this embodiment, in the connection between the terminals 21 and 41 in the semiconductor device 10, the thickness of the metal layer 12 is preferably 0.5 μm or more, and more preferably 0.8 μm or more. 1 μm or more is more preferable, 100 μm or less is preferable, 50 μm or less is more preferable, and 20 μm or less is more preferable. If the thickness of the metal layer 12 is less than the lower limit, unconnected terminals 21 and 41 may be generated due to a shortage of the metal material constituting the metal layer 12, and if the upper limit is exceeded, adjacent terminals due to surplus metal material. 21 and 41 may cause a bridge due to the connecting portion 81 to cause a short circuit.

  The method for producing the metal layer 12 is not particularly limited, and examples thereof include a method for producing from a lump such as an ingot by rolling, a method for forming the resin layer 11 directly by vapor deposition, sputtering, plating, and the like.

  In the conductive connection sheet 1, the blending amount of the low melting point metal material, that is, the occupation amount of the metal layer 12, is preferably 5% by weight or more in the conductive connection sheet 1, and is 20% by weight or more. More preferably, it is more preferably 30% by weight or more. Moreover, it is preferable that it is less than 100 weight%, It is more preferable that it is 80 weight% or less, It is further more preferable that it is 70 weight% or less.

  If the blending amount of the metal material in the conductive connection sheet 1, that is, the occupation amount of the metal layer 12 is less than the lower limit, there is a possibility that unconnected terminals 21 and 41 are generated due to a shortage of the metal material constituting the metal layer 12. If the upper limit is exceeded, a surplus of the metal material may cause bridging by the connecting portion 81 between the adjacent terminals 21 and 41, which may cause a short circuit.

Alternatively, the occupation amount of the metal layer 12 may be defined by a volume ratio with respect to the conductive connection sheet 1. For example, the occupation amount (blending amount) of the metal layer 12 is preferably 1% by volume or more, more preferably 2% by volume or more, and more preferably 3% by volume or more with respect to the conductive connection sheet 1. Further preferred. Moreover, it is preferable that it is 90 volume% or less, It is more preferable that it is 80 volume% or less, It is further more preferable that it is 70 volume% or less. If the occupied amount of the metal layer 12 is less than the lower limit, there is a possibility that unconnected terminals 21 and 41 may be generated due to a shortage of the metal material constituting the metal layer 12, and if the upper limit is exceeded, the metal layer 12 is adjacent due to surplus metal material. There is a possibility that a bridge is formed between the terminals 21 and 41 by the connecting portion 81 and a short circuit occurs.

  In the present embodiment, as shown in FIG. 1, the case where the metal layer 12 is formed on the entire surface of the resin composition layer 11 has been described. However, the present invention is not limited to this case, and the metal layer 12 is planar. The shape is not particularly limited as long as it is formed on at least a part of the resin composition layer 11 in view.

  That is, when the metal layer is formed on a part of the resin composition layer 11 in plan view, a certain shape may be repeatedly formed in a pattern, or the shape may be irregular. A regular shape and an irregular shape may be mixed.

  Specifically, as shown in FIG. 4, a metal layer 12 patterned into various shapes is formed on the resin composition layer 11. For example, the shape of the metal layer 12 may be a dotted pattern (a), a striped pattern (b), a polka dot pattern (c), a rectangular pattern (d), a checkered pattern (e), a frame shape ( f), lattice pattern shape (g), multiple frame shape (h) and the like. These shapes are examples, and these shapes can be combined or deformed depending on the purpose and application.

  In addition, the method for producing the repetitive patterned metal layer is not particularly limited, but a method of punching a metal foil formed in a planar shape into a predetermined pattern, a method of forming a predetermined pattern by etching, etc. A method of forming by vapor deposition, sputtering, plating or the like by using a mask or the like can be mentioned.

<< Resin composition layer 11 >>
In the present embodiment, the resin composition layer 11 is composed of a resin composition containing a resin. The sealing layer 80 is formed by the resin composition 11.

  In the present invention, the resin composition can be used in a liquid or solid form at room temperature. In the present specification, “liquid at room temperature” means a state that does not have a certain form at room temperature (about 25 ° C.), and includes a paste form.

  The resin composition is not particularly limited as long as it contains a resin, and a curable resin composition or a thermoplastic resin composition can be used.

  Examples of the curable resin composition include a thermosetting resin composition that is cured by heating, a photocurable resin composition that is cured by irradiation with light, and an anaerobic curable resin composition that is cured by blocking oxygen. Thing etc. are mentioned. Examples of the plastic resin composition include a thermoplastic resin composition that is deformed by heating, and a thermoplastic resin composition that is deformed by irradiation with light.

  Among these resin compositions, a thermosetting resin composition or a thermoplastic resin composition is preferable, and a thermosetting resin composition is particularly preferable. The thermosetting resin composition is excellent in mechanical properties such as linear expansion coefficient and elastic modulus after curing.

Hereinafter, an example using a thermosetting resin composition as a resin composition will be described.
The thermosetting resin composition contains a thermosetting resin and is cured by heating. In addition to the curable resin, the curable resin composition may contain a film-forming resin, a curing agent, a curing accelerator, a silane coupling agent, a filler, and the like as necessary.
The resin composition layer 11 composed of this thermosetting resin composition exists in an uncured state or a semi-cured state.

  The thermosetting resin composition has a gel time at T + 20 ° C. of preferably 30 s to 600 s, more preferably 40 s to 500 s, and even more preferably 40 s to 400 s.

  On the other hand, when the gel time is less than the lower limit, the resin composition is cured before the fusion of the molten metal between the terminals 21 and 41 is completed when a metal having a low surface tension is used. In some cases, metal aggregation may be hindered. Moreover, when gel time exceeds the said upper limit, time until the sealing layer 80 is formed becomes long and productivity falls.

  Here, the gel time can be measured by a hot plate method, an inverted method, a curlastometer method, or the like.

  With the hot plate method, the thermosetting resin composition can be obtained even when the spatula is lifted up while constantly stirring with a spatula from the time when 1 g of the thermosetting resin composition is placed on a hot plate maintained at T + 20 ° C. This is a method of measuring the time until no yarn is pulled.

  The inverted method measures the time from when the cup is inverted by filling 5 g of the thermosetting resin composition in a cup maintained at T + 20 ° C. until the thermosetting resin composition does not flow out. It is a method to do.

The curast meter method is a method of measuring using a JSR curast meter SD type (manufactured by Orientec Co., Ltd.). This is a method in which the thermosetting resin composition is heated to T + 20 ° C. and the time from when the temperature is reached until the load measured by the measuring device rises is measured.

  Here, in this specification, the gel time at T + 20 ° C. of the thermosetting resin composition is the time measured by the hot plate method. However, in the gel time when measured by the inverted method and the curlastometer method, the gel time obtained by the hot plate method has a difference of about ± 50%, respectively, and converted according to this difference. What is necessary is just to use gel time.

  The thermosetting resin composition preferably has a melt viscosity after 10 seconds at T + 20 ° C. of 0.01 Pa · s to 100 Pa · s, more preferably 0.03 Pa · s to 50 Pa · s. Preferably, it is 0.05 Pa · s to 10 Pa · s.

  Here, the molten metal moves in the resin composition and agglomerates between the terminals 21 and 41, so that the resin composition flows into the gaps indicated by X in FIG. 7 where the metal layer 12 is located. Thus, the sealing layer 80 is formed. Therefore, when the viscosity exceeds the upper limit, the fluidity of the resin composition is lowered, the resin composition cannot accurately flow into the gap X, and the sealing performance by the sealing layer 80 is lowered. There is. Further, when the viscosity is less than the lower limit value, it takes a long time to form the sealing layer 80, so that productivity is lowered.

In the present specification, the melt viscosity after 10 s at T + 20 ° C. was measured using a differential scanning calorimeter, and the calorific value was calculated from the curing calorific value using a Kamal equation model and a Cross model. The melt viscosity of the resin composition after 10 seconds at T + 20 ° C.

Hereinafter, the constituent materials of the thermosetting resin as described above will be described.
(I) Thermosetting resin Although a thermosetting resin will not be specifically limited if it melts and hardens | cures by heating, Usually, what can be used as an adhesive agent for semiconductor device manufacture is used.

  Such a thermosetting resin is not particularly limited. For example, epoxy resin, phenoxy resin, silicone resin, oxetane resin, phenol resin, (meth) acrylate resin, polyester resin (unsaturated polyester resin), diallyl phthalate resin , Maleimide resin, polyimide resin (polyimide precursor resin), bismaleimide-triazine resin and the like. In particular, the use of a thermosetting resin containing at least one selected from the group consisting of epoxy resins, (meth) acrylate resins, phenoxy resins, polyester resins, polyimide resins, silicone resins, maleimide resins, and bismaleimide-triazine resins. preferable. Among these, an epoxy resin is preferable from the viewpoint of excellent curability and storage stability, heat resistance, moisture resistance, and chemical resistance of a cured product. In addition, these thermosetting resins may be used individually by 1 type, or may use 2 or more types together.

  The epoxy resin is not particularly limited, and any epoxy resin that is liquid at room temperature and solid at room temperature can be used. It is also possible to use an epoxy resin that is liquid at room temperature and an epoxy resin that is solid at room temperature. When the thermosetting resin composition is liquid, it is preferable to use an epoxy resin that is liquid at room temperature. When the thermosetting resin composition is solid, both liquid and solid epoxy resins are used. Furthermore, it is preferable that the thermosetting resin composition contains a film-forming resin.

  Although it does not specifically limit as a liquid epoxy resin at room temperature (25 degreeC), A bisphenol A type epoxy resin, a bisphenol F type epoxy resin, etc. are mentioned, Among these, it can use combining 1 type or 2 types. .

  The epoxy equivalent of the epoxy resin that is liquid at room temperature is preferably 150 to 300 g / eq, more preferably 160 to 250 g / eq, and particularly preferably 170 to 220 g / eq. If the epoxy equivalent is less than the lower limit, the shrinkage of the cured product tends to increase depending on the type of epoxy resin used, and the semiconductor device 10 and the electronic device including the semiconductor device 10 may be warped. Moreover, when it exceeds the said upper limit, when it is set as the structure which uses a film-forming resin together with a thermosetting resin composition, it may show the tendency for the reactivity with a film-forming resin, especially a polyimide resin to fall.

  Further, the epoxy resin solid at room temperature (25 ° C.) is not particularly limited. , A glycidyl ester type epoxy resin, a trifunctional epoxy resin, a tetrafunctional epoxy resin, and the like. Among these, one kind or two or more kinds can be used in combination. Among these, solid trifunctional epoxy resins, cresol novolac type epoxy resins, and the like are preferably used.

  In addition, 150-3000 g / eq is preferable, as for the epoxy equivalent of a solid epoxy resin at room temperature, 160-2500 g / eq is more preferable, and 170-2000 g / eq is especially preferable.

  The softening point of the epoxy resin that is solid at room temperature is preferably about 40 to 120 ° C, more preferably about 50 to 110 ° C, and particularly preferably about 60 to 100 ° C. When the softening point is within the above range, tackiness of the thermosetting resin composition can be suppressed, and handling can be easily performed.

  Moreover, in the thermosetting resin composition, the blending amount of the thermosetting resin described above can be appropriately set according to the form of the thermosetting resin composition to be used.

  For example, in the case of a liquid thermosetting resin composition, the amount of the thermosetting resin in the thermosetting resin composition is preferably 10% by weight or more, and preferably 15% by weight or more. Is more preferably 20% by weight or more, still more preferably 25% by weight or more, still more preferably 30% by weight or more, and particularly preferably 35% by weight or more. Further, it is preferably less than 100% by weight, more preferably 95% by weight or less, further preferably 90% by weight or less, still more preferably 75% by weight or less, and 65% by weight or less. Is still more preferable, and it is especially preferable that it is 55 weight% or less.

  In the case of a solid thermosetting resin composition, the amount of the thermosetting resin is preferably 5% by weight or more, and preferably 10% by weight or more in the thermosetting resin composition. More preferably, it is more preferably 15% by weight or more, and particularly preferably 20% by weight or more. Further, it is preferably 90% by weight or less, more preferably 85% by weight or less, still more preferably 80% by weight or less, still more preferably 75% by weight or less, and 65% by weight or less. It is still more preferable that it is 55% by weight or less.

  When the blending amount of the thermosetting resin in the thermosetting resin composition is within the above range, the electrical connection strength and the mechanical adhesive strength between the terminals 21 and 41 can be sufficiently ensured.

(Ii) Film-forming resin As described above, when a solid resin is used as the thermosetting resin composition, in addition to the thermosetting resin, film formation is further included in the thermosetting resin composition. It is preferable that the composition contains a functional resin.

  Such a film-forming resin is not particularly limited as long as it is soluble in an organic solvent and has a film-forming property alone, and these may be used in combination.

  Specifically, the film-forming resin is not particularly limited. For example, (meth) acrylic resin, phenoxy resin, polyester resin, polyurethane resin, polyimide resin, polyamideimide resin, siloxane-modified polyimide resin, polybutadiene resin, Polypropylene resin, styrene-butadiene-styrene copolymer, styrene-ethylene-butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, acrylonitrile -Butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, polyvinyl acetate, nylon, etc., including one or more of these It can be used in conjunction. Among these, (meth) acrylic resins, phenoxy resins, polyester resins, polyamide resins and polyimide resins are preferable.

  In this specification, “(meth) acrylic resin” refers to a polymer of (meth) acrylic acid and its derivatives, or a co-polymerization of (meth) acrylic acid and its derivatives and other monomers. Means coalescence. Here, the expression “(meth) acrylic acid” or the like means “acrylic acid or methacrylic acid” or the like.

The (meth) acrylic resin is not particularly limited. For example, polyacrylic acid such as polyacrylic acid, polymethacrylic acid, polymethyl acrylate, polyethyl acrylate, polybutyl acrylate, and polyacrylic acid-2-ethylhexyl. Acid ester, polymethyl methacrylate, polyethyl methacrylate, polymethacrylate such as polybutyl methacrylate, polyacrylonitrile, polymethacrylonitrile, polyacrylamide, butyl acrylate-ethyl acrylate-acrylonitrile copolymer, acrylonitrile- Butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, acrylonitrile-styrene copolymer, methyl methacrylate-styrene copolymer, methacryl Methyl-acrylonitrile copolymer, methyl methacrylate-α-methylstyrene copolymer, butyl acrylate-ethyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate-methacrylic acid copolymer, butyl acrylate-ethyl acrylate-acrylonitrile 2-hydroxyethyl methacrylate-acrylic acid copolymer, butyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate copolymer, butyl acrylate-acrylonitrile-acrylic acid copolymer, butyl acrylate-ethyl acrylate-acrylonitrile copolymer Examples thereof include a polymer and an ethyl acrylate-acrylonitrile-N, N-dimethylacrylamide copolymer, and one or more of these can be used in combination. Of these, butyl acrylate-ethyl acrylate-acrylonitrile copolymer and ethyl acrylate-acrylonitrile-N, N-dimethylacrylamide are preferable.

  Further, the skeleton of the phenoxy resin is not particularly limited, and examples thereof include bisphenol A type, bisphenol F type, and biphenyl type.

  The polyimide resin is not particularly limited as long as it has an imide bond in the repeating unit. For example, the polyimide resin is obtained by reacting diamine and acid dianhydride and heating and dehydrating and ring-closing the resulting polyamic acid. Can be mentioned.

  Examples of the diamine include, but are not limited to, aromatics such as 3,3′-dimethyl-4,4′diaminodiphenyl, 4,6-dimethyl-m-phenylenediamine, and 2,5-dimethyl-p-phenylenediamine. Examples include diamines and siloxane diamines such as 1,3-bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane, and one or more of these can be used in combination. .

  Examples of the acid dianhydride include 3,3,4,4′-biphenyltetracarboxylic acid, pyromellitic dianhydride, 4,4′-oxydiphthalic dianhydride, and the like. One kind or a combination of two or more kinds can be used.

  The polyimide resin may be either soluble or insoluble in the solvent, but it is easy to varnish when mixed with other components (curable resin), and is solvent-soluble in terms of excellent handleability. Are preferred. In particular, a siloxane-modified polyimide resin is preferably used because it can be dissolved in various organic solvents.

  The weight average molecular weight of the film-forming resin is not particularly limited, but is preferably about 8,000 to 1,000,000, more preferably about 8,500 to 950,000, and 9,000 to More preferably, it is about 900,000. When the weight average molecular weight of the film-forming resin is within the above range, the film-forming property can be improved, and the fluidity of the resin composition layer 11 before curing can be suppressed.

  In addition, the weight average molecular weight of film-forming resin can be measured by GPC (gel permeation chromatography), for example.

  In addition, as a film-forming resin, a commercial product of this product can be used, and further, various additives such as a plasticizer, a stabilizer, an antistatic agent and a pigment are blended within a range not impairing the effects of the present invention. You can also use what you did.

  Moreover, in the thermosetting resin composition, the blending amount of the film-forming resin described above can be appropriately set according to the form of the thermosetting resin composition to be used.

  For example, in the case of a solid thermosetting resin composition, the blending amount of the film-forming resin is preferably 5% by weight or more and preferably 10% by weight or more in the curable resin composition. Is more preferable, and it is further more preferable that it is 15 weight% or more. Further, it is preferably 50% by weight or less, more preferably 45% by weight or less, and further preferably 40% by weight or less. When the blending amount of the film-forming resin is within the above range, the fluidity of the thermosetting resin composition before melting can be suppressed, and the resin composition layer (conductive connection material) 11 can be easily handled. It becomes.

(Iii) Compound having flux function As described above, it is preferable that the thermosetting resin composition further includes a flux function in addition to the thermosetting resin. The compound having a flux function has an action of removing oxide films formed on the surfaces of the terminals 21 and 41 and the metal layer 12 by a flux action. Therefore, if such a compound is contained in the thermosetting resin composition, as will be described in detail in a method for forming a connection portion and a sealing layer, which will be described later, the terminals 21, 41 and the metal layer 12 Even if an oxide film is formed on the surface, the oxide film can be reliably removed by the action of this compound. As a result, the molten metal layer 12 aggregates between the terminals 21 and 41 with higher selectivity.

  Although it does not specifically limit as a compound which has such a flux function, For example, the compound which has a phenolic hydroxyl group and / or a carboxyl group is used preferably.

  Examples of the compound having a phenolic hydroxyl group include phenol, o-cresol, 2,6-xylenol, p-cresol, m-cresol, o-ethylphenol, 2,4-xylenol, 2,5-xylenol, m- Ethylphenol, 2,3-xylenol, meditol, 3,5-xylenol, p-tert-butylphenol, catechol, p-tert-amylphenol, resorcinol, p-octylphenol, p-phenylphenol, bisphenol F, bisphenol AF, biphenol Monomers containing phenolic hydroxyl groups such as diallyl bisphenol F, diallyl bisphenol A, trisphenol, tetrakisphenol, phenol novolac resins, o-cresol novolac resins, bisphenols Lumpur F novolak resins, resins containing phenolic manufactured hydroxyl group, such as bisphenol A novolac resins. Can be used singly or in combination of two or more of them.

Examples of the compound having a carboxyl group include aliphatic acid anhydrides, alicyclic acid anhydrides, aromatic acid anhydrides, aliphatic carboxylic acids, and aromatic carboxylic acids. Examples of the aliphatic acid anhydride include succinic anhydride, polyadipic acid anhydride, polyazeline acid anhydride, polysebacic acid anhydride, and the like. Examples of the alicyclic acid anhydride include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylhymic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, methylcyclohexene dicarboxylic acid. An anhydride etc. are mentioned. Examples of the aromatic acid anhydride include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic acid anhydride, ethylene glycol bistrimellitate, glycerol trislimitate, etc. Species or a combination of two or more can be used.

The aliphatic carboxylic acid is not particularly limited, for example, formic acid, acetic acid, propionic acid, butyric acid, valeric acid, pivalic acid, caproic acid, caprylic acid, lauric acid, myristic acid, palmitic acid, stearic acid, acrylic acid, Methacrylic acid, crotonic acid, oleic acid, fumaric acid, maleic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, sebacic acid, dodecanedioic acid, pimelic acid, etc. Two or more kinds can be used in combination. Among these, the following formula (1):
_{HOOC- (CH 2) n -COOH (} 1)
(In Formula (1), n is an integer of 1-20.)
Of these, adipic acid, sebacic acid, and dodecanedioic acid are more preferably used.

  The structure of the aromatic carboxylic acid is not particularly limited, but a compound represented by the following formula (2) or the following formula (3) is preferable.

[Wherein, R ^{1 to} R ⁵ are each independently a monovalent organic group, and at least one of R ^{1 to} R ⁵ is a hydroxyl group. ]

[Wherein, R ^{6 to} R ²⁰ are each independently a monovalent organic group, and at least one of R ^{6 to} R ²⁰ is a hydroxyl group or a carboxyl group. ]
Examples of such aromatic carboxylic acids include benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, hemimellitic acid, trimellitic acid, trimesic acid, merophanic acid, platonic acid, pyromellitic acid, meritic acid, and xylic acid. , Hemelic acid, mesitylene acid, prenylic acid, toluic acid, cinnamic acid, salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6 -Dihydroxybenzoic acid, 3,5-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3 , Naphthoic acid derivatives such as 5--2-dihydroxy-2-naphthoic acid, phenolphthaline, diphenolic acid, etc. The recited may be used singly or in combination of two or more of them.

  The compound having such a flux function has an effect of removing an oxide film on the surfaces of the metal layer 12 and the terminals 21 and 41 so that the metal layer 12 and the terminals 21 and 41 can be electrically connected to each other. It preferably has a function as a curing agent for curing the curable resin, that is, a functional group capable of reacting with the thermosetting resin.

  Such a functional group is appropriately selected according to the type of thermosetting resin. For example, when the curable resin is an epoxy resin, a functional group capable of reacting with an epoxy group such as a carboxyl group, a hydroxyl group, and an amino group is present. Can be mentioned. The compound having such a flux function increases the wettability of these surfaces by removing the oxide film formed on the surfaces of the metal layer 12 and the terminals 21 and 41 when the thermosetting resin composition is melted. 81 can be easily formed and the terminals 21 and 41 can be electrically connected. Further, after the electrical connection between the terminals 21 and 41 is completed by the connecting portion 81, this compound acts as a curing agent and is added to the thermosetting resin to increase the elastic modulus or Tg of the resin. Demonstrate. Therefore, when a compound having such a flux function is used as the flux, flux cleaning is unnecessary, and the occurrence of ion migration due to the remaining flux can be suppressed or prevented accurately.

  Examples of the compound having such a function and having a flux function include compounds having at least one carboxyl group. For example, when the thermosetting resin is an epoxy resin, aliphatic dicarboxylic acid and a compound having a carboxyl group and a phenolic hydroxyl group can be used.

  Although it does not specifically limit as said aliphatic dicarboxylic acid, The compound which two carboxyl groups couple | bonded with the aliphatic hydrocarbon group is mentioned. The aliphatic hydrocarbon group may be saturated or unsaturated acyclic, or may be saturated or unsaturated cyclic. Further, when the aliphatic hydrocarbon group is acyclic, it may be linear or branched.

  Examples of such aliphatic dicarboxylic acids include compounds in which n is an integer of 1 to 20 in the formula (1). When n in the formula (1) is within the above range, the balance between the flux activity, the outgas at the time of adhesion, the elastic modulus after curing of the thermosetting resin composition, and the glass transition temperature becomes good. In particular, n is preferably 3 or more from the viewpoint that the increase in the elastic modulus after curing of the curable resin composition can be suppressed and the adhesion with an adherend such as the interposer 30 can be improved. From the viewpoint of suppressing the decrease in elastic modulus and further improving the connection reliability, n is preferably 10 or less.

  Examples of the aliphatic dicarboxylic acid represented by the formula (1) include glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, dodecanedioic acid, tridecanedioic acid, and tetradecanedioic acid. Pentadecanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosanedioic acid and the like. Among these, adipic acid, suberic acid, sebacic acid and dodencandioic acid are preferable, and sebacic acid is more preferable.

Further, examples of the compound having a carboxyl group and a phenolic hydroxyl group include salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), and 2,6-dihydroxy. Benzoic acid derivatives such as benzoic acid, 3,4-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2 -Naphthoic acid derivatives such as naphthoic acid, phenolphthaline, diphenolic acid and the like. Of these, phenolphthaline, gentisic acid, 2,4-dihydroxybenzoic acid, and 2,6-dihydroxybenzoic acid are preferable, and phenolphthaline and gentisic acid are more preferable.

  The compounds having the flux function as described above may be used alone or in combination of two or more.

  In addition, since any compound easily absorbs moisture and causes voids, in the present invention, it is preferably dried in advance before use.

  Content of the compound which has a flux function can be suitably set according to the form of the resin composition to be used.

  For example, when the resin composition is liquid, the content of the compound having a flux function is preferably 1% by weight or more, more preferably 2% by weight or more, more preferably 3% by weight with respect to the total weight of the thermosetting resin composition. % Or more is particularly preferable. Moreover, 50 weight% or less is preferable, 40 weight% or less is more preferable, 30 weight% or less is further more preferable, and 25 weight% or less is especially preferable.

  In the case of a solid resin composition, the content of the compound having a flux function is preferably 1% by weight or more, more preferably 2% by weight or more with respect to the total weight of the thermosetting resin composition. 3% by weight or more is particularly preferable. Moreover, 50 weight% or less is preferable, 40 weight% or less is more preferable, 30 weight% or less is further more preferable, and 25 weight% or less is especially preferable.

  If the content of the compound having a flux function is within the above range, the metal layer 12 and the oxide films on the surfaces of the terminals 21 and 41 can be reliably removed so that they can be electrically joined. Furthermore, when the resin composition is a thermosetting resin composition, the elastic modulus or Tg of the thermosetting resin composition can be increased by efficiently adding to the thermosetting resin at the time of curing. Moreover, generation | occurrence | production of the ion migration resulting from the compound which has an unreacted flux function can be suppressed.

(Iv) Curing Agent The curing agent other than the compound having a flux function is not particularly limited, and examples thereof include phenols, amines, and thiols. Such a hardening | curing agent can be suitably selected according to the kind etc. of thermosetting resin. For example, when an epoxy resin is used as the curable resin, good reactivity with the epoxy resin, low dimensional change during curing, and appropriate physical properties after curing (for example, heat resistance, moisture resistance, etc.) can be obtained. In view of this, phenols are preferably used as the curing agent, and bifunctional or higher functional phenols are more preferably used in terms of excellent physical properties after curing of the thermosetting resin. In addition, such a hardening | curing agent may be used individually by 1 type, and may be used in combination of 2 or more type.

Examples of phenols include bisphenol A, tetramethylbisphenol A, diallyl bisphenol A, biphenol, bisphenol F, diallyl bisphenol F, trisphenol, tetrakisphenol, phenol novolac resin, cresol novolac resin, etc. Species or a combination of two or more can be used. Among these, a phenol novolac resin and a cresol novolac resin are preferable from the viewpoints of good melt viscosity, reactivity with an epoxy resin, and excellent physical properties after curing.

  Further, in the thermosetting resin composition, the amount of the curing agent described above is the type of the thermosetting resin and the curing agent to be used, and when the compound having a flux function has a functional group that functions as a curing agent, It is set as appropriate depending on the type and amount of the functional group.

  For example, when an epoxy resin is used as the thermosetting resin, the content of the curing agent is preferably about 0.1 to 50% by weight with respect to the total weight of the thermosetting resin composition. It is more preferably about ˜40% by weight, and further preferably about 0.5 to 30% by weight. When the content of the curing agent is within the above range, the electrical connection strength and the mechanical adhesive strength of the connection portion 81 formed between the terminals 21 and 41 can be sufficiently ensured.

(V) Curing accelerator Further, a curing accelerator can be further added to the thermosetting resin composition. Thereby, a thermosetting resin composition can be hardened reliably and easily.

  Although it does not specifically limit as a hardening accelerator, For example, imidazole, 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2- Phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-ethyl-4-methyl Imidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2, 4 Diamino-6- [2′-methylimidazolyl (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- [2′-undecylimidazolyl (1 ′)]-ethyl-s-triazine, 2 , 4-Diamino-6- [2'-ethyl-4-methylimidazolyl (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-methylimidazolyl (1')]-ethyl -Isocyanuric acid adduct of s-triazine, isocyanuric acid adduct of 2-phenylimidazole, isocyanuric acid adduct of 2-methylimidazole, 2-phenyl-4,5-dihydroxydimethylimidazole, 2-phenyl-4-methyl- Examples include imidazole compounds such as 5-hydroxymethylimidazole, and one or more of these may be used in combination. Kill.

  Moreover, in a thermosetting resin composition, the compounding quantity of the hardening accelerator mentioned above can be suitably set according to the kind of hardening accelerator to be used.

  For example, when an imidazole compound is used, the amount of the imidazole compound is preferably 0.001% by weight or more, and more preferably 0.003% by weight or more in the thermosetting resin composition. And more preferably 0.005% by weight or more. Further, it is preferably 1.0% by weight or less, more preferably 0.7% by weight or less, and further preferably 0.5% by weight or less. When the blending amount of the imidazole compound is less than the lower limit, depending on the type of the curing accelerator to be used, the effect as the curing accelerator may not be sufficiently exhibited, and the curable resin composition may not be sufficiently cured. . Moreover, when the compounding quantity of an imidazole compound exceeds the said upper limit, before the hardening of a thermosetting resin composition is completed, the metal layer 12 of a molten state cannot fully move to the surface of the terminals 21 and 41, but an insulating area | region. There is a possibility that a part of the metal layer 12 remains in the sealing layer 80 formed in this way, and insulation in the sealing layer 80 cannot be sufficiently secured.

(Vi) Silane Coupling Agent A silane coupling agent can be further added to the thermosetting resin composition.

  Although it does not specifically limit as a silane coupling agent, For example, an epoxy silane coupling agent, an aromatic containing aminosilane coupling agent, etc. are mentioned. By adding such a silane coupling agent, it is possible to improve the adhesion between the joining member (adhered body) such as the interposer 30 and the thermothermosetting resin composition.

  In addition, such a silane coupling agent may be used individually by 1 type, and can also be used in combination of 2 or more type.

  In the thermosetting resin composition, the amount of the silane coupling agent described above is appropriately set according to the type of the joining member, thermosetting resin, and the like. For example, in the thermosetting resin composition, it is preferably 0.01% by weight or more, more preferably 0.05% by weight or more, and further preferably 0.1% by weight or more. Further, it is preferably 2% by weight or less, more preferably 1.5% by weight or less, and further preferably 1% by weight or less.

(Vi) Filler Further, a filler can be further added to the curable resin composition. Thereby, various physical properties can be added to the resin composition, and reliability can be improved. Examples of the filler include a filler made of an organic material such as rubber particles, and an inorganic filler such as silica. From the viewpoint of improving reliability, an inorganic filler is preferable. By including the inorganic filler, the linear expansion coefficient of the cured resin composition can be reduced, thereby improving the reliability.

  Although the said inorganic filler is not specifically limited, For example, silver, titanium oxide, a silica, mica, an alumina etc. can be mentioned, These can also include multiple types. Thus, although the inorganic filler can be selected from a plurality of types, silica can be preferably used from the viewpoint of cost and the like. From the viewpoint of thermal conductivity, aluminum oxide, aluminum nitride, titanium oxide, silicon nitride, boron nitride, or the like can also be used. As the shape of the silica, there are crushed silica and spherical silica, and spherical silica is preferable.

  The average particle size of the inorganic filler is preferably 10 nm or more, more preferably 50 nm or more, and particularly preferably 100 nm or more. Further, it is preferably 50 μm or less, more preferably 20 μm or less, and particularly preferably 10 μm or less. When the average particle size of the inorganic filler is not less than the lower limit and not more than the upper limit, the dispersibility of the inorganic filler in the curable resin composition is excellent, and the transparency of the curable resin composition is excellent.

  The content of the inorganic filler is preferably 1% by weight or more, more preferably 10% by weight or more, and more preferably 20% by weight or more with respect to the total weight of the curable resin composition. Particularly preferred. Further, it is preferably 80% by weight or less, more preferably 70% by weight or less, and particularly preferably 60% by weight or less. When the content of the inorganic filler is not less than the above lower limit and not more than the above upper limit, the cured resin composition has excellent adhesion, heat resistance and moisture resistance, and can ensure good electrical connectivity. it can.

In addition to the above-described components, the thermosetting resin composition may further contain a plasticizer, a stabilizer, a tackifier, a lubricant, an antioxidant, an antistatic agent, a pigment, and the like. .
Moreover, the thermosetting resin composition as described above can be prepared by mixing and dispersing the respective components. The mixing method and dispersion method of each component are not specifically limited, It can mix and disperse | distribute by a conventionally well-known method.

  Moreover, you may mix the said each component in a solvent or under absence of solvent, and may prepare a liquid thermosetting resin composition. The solvent used at this time is not particularly limited as long as it is inert to each component. For example, acetone, methyl ethyl ketone (MEK), methyl isobutyl ketone (MIBK), diisobutyl ketone (DIBK), cyclohexanone, Ketones such as diacetone alcohol (DAA), aromatic hydrocarbons such as benzene, xylene and toluene, alcohols such as methyl alcohol, ethyl alcohol, isopropyl alcohol and n-butyl alcohol, methyl cellosolve, ethyl cellosolve, butyl cellosolve, Cellosolves such as methyl cellosolve acetate and ethyl cellosolve acetate, N-methyl-2-pyrrolidone (NMP), tetrahydrofuran (THF), dimethylformamide (DMF), dibasic acid ester (DBE), 3 Ethyl ethoxypropionate (EEP), dimethyl carbonate (DMC) and the like, can be used singly or in combination of two or more of them. Moreover, it is preferable that the usage-amount of a solvent is an quantity from which the solid content concentration of the component mixed with the solvent will be 10 to 60 weight%.

  In the present invention, the above-mentioned thermosetting resin composition has an epoxy resin content of 10 to 90% by weight, a curing agent of 0.1 to 50% by weight, and a film-forming resin content of 5 to 5% with respect to the total weight of the resin composition. More preferably, it contains 50% by weight and 1-50% by weight of a compound having a flux function. The epoxy resin is 20 to 80% by weight, the curing agent is 0.2 to 40% by weight, the film-forming resin is 10 to 45% by weight, and the compound having a flux function is 2 to 40% by weight with respect to the total weight of the resin composition. More preferably, those containing The epoxy resin is 35 to 55% by weight, the curing agent is 0.5 to 30% by weight, the film-forming resin is 15 to 40% by weight, and the compound having a flux function is 3 to 25% by weight with respect to the total weight of the resin composition. Those containing are particularly preferred. As a result, it is possible to sufficiently ensure the electrical connection strength and the mechanical adhesive strength between the terminals 21 and 41.

  Moreover, the thickness of the resin composition layer 11 in the conductive connection sheet 1 is not particularly limited, but is preferably 1 μm or more, more preferably 3 μm or more, and further preferably 5 μm or more. The thickness of the resin composition layer 11 is preferably 200 μm or less, more preferably 150 μm or less, and further preferably 100 μm or less. When the thickness of the resin composition layer 11 is within the above range, the gap between the adjacent terminals 21 and 41 can be sufficiently filled with the resin composition to form the sealing layer 80, and the resin composition can be cured. Thereafter, the mechanical adhesive strength after solidification and the electrical connection between the opposing terminals 21 and 41 can be sufficiently ensured, and the connection portion 81 can be formed.

  As described above, in the present invention, the conductive connection sheet 1 is one in which the metal material satisfies the surface tension range. However, when the resin composition is a thermosetting resin composition, the thermosetting property thereof is used. When the resin composition satisfies the gel time and the viscosity, the connection portion 81 formed using the conductive connection sheet 1 has particularly excellent electrical reliability.

  It is presumed that the connection portion 81 is excellent in electrical reliability because the conductive connection sheet 1 has the following actions and effects.

  When the conductive connection sheet 1 having a metal material satisfying the surface tension range is used to form the connection portion 81 and the sealing layer 80, the metal material is excellent in self-cohesion force. The material itself tends to aggregate. As a result, the self-aggregated molten metal is likely to agglomerate to the terminals 21 and 41 because the contact opportunity to contact the terminals 21 and 41 increases.

  At this time, if the gel time of the thermosetting resin composition satisfies the above range, it can be prevented or suppressed that the resin composition is cured before the metal material is aggregated. For this reason, the molten metal having an excellent self-cohesive force can be more suitably aggregated between the terminals 21 and 41 without being hindered by premature curing of the resin composition.

  Furthermore, since the resin composition has fluidity when the viscosity of the thermosetting resin composition satisfies the above range, the molten metal agglomerates between the terminals 21 and 41. The resin composition flows into the voids.

  From the above, when the metal material of the metal layer 12 is suitably aggregated between the terminals 21 and 41, the connection part 81 having excellent electric characteristics can be formed, and the metal material is mixed in the resin composition. Thus, it is possible to form the sealing layer 80 in which the generation of voids between the terminals 21 is suppressed or prevented.

  In addition, in this embodiment, although the conductive connection sheet 1 is a structure provided with two layers, the 1st resin composition layer 11 and the 2nd resin composition layer 13, the 2nd resin composition layer 13 is It may be of the same configuration as the first resin composition layer 11 described above, may be the same composition as the first resin composition layer 11, or may be of a different composition. .

  Moreover, the conductive connection sheet 1 should just be provided with the at least 1 layer of resin composition layer, and even if any one of the 1st resin composition layer 11 and the 2nd resin composition layer 13 is abbreviate | omitted. Moreover, the thing of the structure provided with the 3rd and 4th resin composition layer different from the 1st resin composition layer 11 and the 2nd resin composition layer 13 may be sufficient.

  The form of the conductive connection sheet 1 as described above is appropriately set according to the form of the resin composition constituting the resin composition layer 11 and the like.

  For example, when the thermosetting resin composition is in a liquid state, the metal layer 12 is prepared, the thermosetting resin composition is applied to both sides thereof, and this is semi-cured (B-stage) at a predetermined temperature. The resin composition layers 11 and 13 can be used as the conductive connection sheet 1. Moreover, after applying a thermosetting resin composition on a release substrate such as a polyester sheet, and forming this film for the purpose of semi-curing (B-stage) at a predetermined temperature, it is peeled off from the release substrate, What was laminated on the metal layer 12 and formed on a film can be used as the conductive connection sheet 1.

  When the thermosetting resin composition is solid, the varnish of the thermosetting resin composition dissolved in an organic solvent is applied onto a release substrate such as a polyester sheet, and dried at a predetermined temperature. What formed the composition layer 11 and bonded the metal layer 12 after that can be used as the conductive connection sheet 1. Moreover, what formed the metal layer 12 on the resin composition layer 11 obtained by carrying out similarly to the above using methods, such as vapor deposition, and made it into the film form can also be provided as the electrically conductive connection sheet 1. FIG.

  The metal layer 12 may be embossed for the purpose of improving the adhesion with the resin composition layer 11.

The thickness of the conductive connection sheet 1 is not particularly limited, but is preferably 1 μm or more, more preferably 3 μm or more, further preferably 5 μm or more, and preferably 200 μm or less. 150 μm or less is more preferable, and 100 μm or less is further preferable. When the thickness of the conductive connection sheet 1 is within the above range, the gap between the adjacent terminals 21 and 41 can be sufficiently filled with the sealing layer 80 made of the resin composition. Further, the mechanical adhesive strength after the resin is cured or solidified and the electrical connection between the opposing terminals can be sufficiently ensured. In addition, it is possible to manufacture a connection terminal according to the purpose and application.

<Method for producing conductive connection sheet 1>
Next, the conductive connection sheet 1 of the present embodiment as described above can be manufactured by, for example, the following manufacturing method.

  The method for producing a conductive connection sheet of the present embodiment includes a first step of forming a first resin composition layer 11 and a metal layer 12 formed on the first resin composition layer 11, and a metal layer. And a second step of forming a first resin composition layer 13 on 12 to obtain a laminate.

Hereinafter, each step will be described.
[1] First Step First, a first resin composition is formed on a release substrate such as a sheet of polyester resin, fluororesin, silicone resin, or a substrate whose surface is release-treated with fluororesin or silicone resin. The physical layer 11 is formed.

  Formation of the 1st resin composition layer 11 on this peeling base material is performed as follows, for example.

(I) When the resin composition forms a liquid at 25 ° C. When the resin composition constituting the first resin composition layer 11 forms a liquid at 25 ° C., the resin composition forms a liquid on the release substrate. The first resin composition layer 11 is formed by supplying a liquid resin composition and then semi-curing the resin composition at a predetermined temperature.

  When the thickness of the first resin composition layer 11 to be formed needs to be controlled, the release substrate supplied with the liquid resin composition is passed through a bar coater having a certain gap, By spraying the liquid resin composition onto the release substrate with a spray coater or the like, the first resin composition layer 11 having a target thickness can be easily manufactured.

  When using a wound release substrate, the liquid resin composition is directly applied on the release substrate, and then the first resin is wound by semi-curing the resin composition. A wound release substrate provided with the composition layer 11 can be obtained.

(Ii) When the resin composition is solid at 25 ° C. When the resin composition constituting the first resin composition layer 11 is solid at 25 ° C., first, the resin composition is dissolved in an organic solvent. And get the varnish. And after supplying (application | coating) and attaching this varnish on a peeling base material, the 1st resin composition layer 11 is formed by making it dry at predetermined temperature.

  In addition, when the thickness of the first resin composition layer 11 to be formed needs to be controlled, the release substrate supplied with the varnish is passed through a bar coater having a certain gap, or the varnish is spray coated. The first resin composition layer 11 having a target thickness can be easily manufactured by spraying on the peeling base material.

  Moreover, when using a rolled release substrate, the first resin composition layer 11 is provided by directly applying the varnish on the release substrate and then winding the varnish while drying it. A rolled-up release substrate can be obtained.

Next, various film forming methods (vapor phase film forming method) such as vapor deposition, sputtering, plating, etc. are formed on almost the entire surface of the first resin composition layer 11 formed on the peeling substrate opposite to the peeling substrate. The metal layer 12 is formed by a liquid phase film forming method.

  When producing a conductive connection sheet having a patterned metal layer, first, for example, a metal layer that forms a sheet is disposed on a release substrate, and the metal layer is formed using a mold from the metal layer side. Half-cutting removes the extra metal layer to form a patterned metal layer.

[2] Second Step The second resin composition layer 13 is formed on the metal layer 12, for example, when the second resin composition layer 13 is directly formed on the metal layer 12. 1], the same method as described in the case of forming the first resin composition layer 11 on the release substrate can be used.

  In addition, when the second resin composition layer 13 is formed on the release substrate in the same manner as the first resin composition layer 11 is formed on the release substrate in the step [1], In a state where the metal layer 12 and the second resin composition layer 13 face each other, they are laminated with a heat roll, and the second resin composition layer 13 is pressure-bonded to the metal layer 12, so that the metal layer 12 is placed on the metal layer 12. The second resin composition layer 13 can be formed.

  Prior to this step [2], the metal layer 12 is embossed for the purpose of improving the surface roughness in order to enhance the adhesion with the second resin composition layer 13. It may be.

  Through the above-described steps, a laminate having a three-layer structure in which the first resin composition layer 11, the metal layer 12, and the second resin composition layer 13 are laminated so as to be joined to each other in this order. The conductive connection sheet 1 can be obtained.

  This conductive connection sheet 1 is used for forming the connection portion 81 and the sealing layer 80 included in the semiconductor device 10.

  The connection method between terminals of the present invention or the method of forming connection terminals of the present invention is applied to the formation of the connection portion 81 and the sealing layer 80 using the conductive connection sheet 1.

<Connection method between terminals of the present invention>
Below, the case where the connection part 81 and the sealing layer 80 are formed first by applying the connection method between the terminals of this invention is explained in full detail.

  FIG. 5 is a schematic diagram for explaining an arrangement step in a method of manufacturing a connection portion and a sealing layer included in a semiconductor device using the conductive connection sheet of the present invention (FIG. 5A is a plan view, FIG. (B) is a cross-sectional view taken along line BB in FIG. 5 (a), and FIG. 6 is a heating step in a method for manufacturing a connection portion and a sealing layer included in a semiconductor device using the conductive connection sheet of the present invention. FIG. 6 (a) is a plan view, FIG. 6 (b) is a cross-sectional view taken along line CC in FIG. 6 (a), and FIG. 7 is a conductive connection sheet of the present invention. The schematic diagram for demonstrating the hardening process in the method of manufacturing the connection part and sealing layer with which a semiconductor device is provided using (FIG. 7 (a) is a top view, FIG.7 (b) is FIG.7 (a). It is the DD line sectional drawing in the inside. In the following description, the upper side in FIGS. 5 to 7 is referred to as “upper” and the lower side is referred to as “lower”.

In the method of forming the connection portion 81 and the sealing layer 80 described below, the terminal 21 provided on the semiconductor chip (base material) 20 with the conductive connection sheet 1 and the terminal 41 provided on the interposer (opposite base material) 30 And a heating step for heating the conductive connection sheet 1 to a temperature equal to or higher than the melting point of the metal material, and a curing (solidification) step for curing or solidifying the resin composition.

  Below, when forming the connection part 81 and the sealing layer 80, the case where the resin composition layers 11 and 13 are comprised with a thermosetting resin composition similarly to having demonstrated the electrically conductive connection sheet 1 is demonstrated. To do.

  In the first embodiment in which the resin composition layers 11 and 13 included in the conductive connection sheet 1 are formed of a thermosetting resin composition, the terminal 21 included in the semiconductor chip 20 and the terminal 41 provided in the interposer 30 are provided. An arrangement step of disposing the conductive connection sheet 1 between the melting point of the metal layer 12 (metal material) and a temperature at which the curing of the thermosetting resin composition constituting the resin composition layers 11 and 13 is not completed. It has a heating process for heating the conductive connection sheet 1 and a curing process for completing the curing of the thermosetting resin composition.

Hereinafter, each process is explained in full detail.
[1] Arrangement Step First, the semiconductor chip 20 and the interposer 30 provided with the terminals 41 are prepared.

  Next, the conductive connection sheet 1 is thermocompression bonded to the surface on the terminal 21 side of the semiconductor chip 20 using an apparatus such as a roll laminator or a press. Then, in this state, the semiconductor chip 20 and the interposer 30 are aligned so that the terminals 21 and the terminals 41 included in the semiconductor chip 20 and the interposer 30 face each other, as shown in FIG.

  Thereby, the conductive connection sheet 1 is disposed between the semiconductor chip 20 and the interposer 30 provided with the terminals 41 in a state where the terminals 21 and the terminals 41 face each other. At this time, in the connection method between the terminals of the present invention, the conductive connection sheet 1 is arranged so as to correspond to the terminal region 211 of the semiconductor device 20 as shown in FIG.

  The temperature at which the conductive connection sheet 1 is thermocompression bonded is preferably higher than the melting temperature of the first resin composition layer 11 and 5 ° C. lower than the melting temperature of the metal layer 12. It is more preferable that the temperature is lower by at least ° C.

  5B, the conductive connection sheet 1 is not limited to being thermocompression bonded to the semiconductor chip 20 side, and may be thermocompression bonded to the terminal 41 side of the interposer 30. Both of them may be thermocompression bonded.

  Here, the total area of each terminal 21 arranged in the terminal region 211 in plan view is S2. In addition, the area in plan view of the metal layer 12 constituting the conductive connection sheet 1 disposed so as to correspond to the terminal region 211 is defined as S1.

  That is, in the connection method between terminals of the present invention, as shown in FIG. 5A, 16 terminals 21 are arranged in the terminal region 211, and each area of the 16 terminals 21 in a plan view is shown. The total area corresponds to S2. Further, the area of the substantially rectangular metal layer 12 arranged so as to correspond to the substantially rectangular terminal region 211 corresponds to S1.

  At this time, in the terminal region 211, the area ratio S1 / S2 between the area S1 in the plan view of the metal layer 12 and the area S2 in the plan view of the terminal 21 is preferably 1 to 32, and is preferably 1.5 to 30. More preferably, it is more preferably 2-28.

  If the area ratio is less than the lower limit, depending on the thickness of the metal layer, unconnected terminals 21 and 41 may occur due to a shortage of the metal material constituting the metal layer 12. If the upper limit is exceeded, depending on the film thickness of the metal layer, there may be a case where the terminals 21 and 41 cannot be aggregated due to the surplus of the metal material.

  Note that the area S <b> 1 of the metal layer 12 in a plan view indicates an area arranged so as to correspond to the terminal region 211, and is appropriately set depending on the shape of the terminal region 211. Therefore, in the present embodiment, since the terminals 21 are arranged in a lattice pattern on the entire surface of the semiconductor device 20, the terminal region 211 indicating the region where the terminal group in which the terminals 21 are arranged is provided is shown in FIG. It becomes a substantially rectangular area as shown in FIG. As described above, when the terminal region 211 has a substantially rectangular shape, the area S1 of the metal layer 12 corresponds to the area of the substantially rectangular region corresponding to the terminal region 211. On the other hand, for example, when the terminals 21 are arranged in a straight line at equal intervals along the edge of the semiconductor device 20, that is, the terminals 21 have a square frame shape (b) Terminal area 211 is a square frame-shaped area. Therefore, since the terminal region 211 has such a square frame shape, the area S1 of the metal layer 12 corresponds to the square frame-shaped region corresponding to the square frame-shaped terminal region 211. As described above, the area S1 is appropriately set depending on the shape of the terminal region 211.

[2] Heating Step Next, in the arrangement step [1], the conductive connection sheet 1 arranged between the semiconductor chip 20 and the interposer 30 is not lower than the melting point of the metal layer 12 as shown in FIG. Heat with.

  Here, when the conductive connection sheet 1 having a metal material satisfying the range of the surface tension is used when heating at the melting point or higher of the metal layer 12, the metal material is excellent in self-cohesion force. The material itself tends to aggregate. As a result, the self-aggregated molten metal is likely to agglomerate to the terminals 21 and 41 because the contact opportunity to contact the terminals 21 and 41 increases.

  Furthermore, when the gel time of the thermosetting resin composition satisfies the above range, the molten metal having excellent self-cohesive force is not hindered by premature curing of the resin composition, and between the terminals 21 and 41. It can be suitably aggregated.

  Moreover, since the resin composition has fluidity when the viscosity of the thermosetting resin composition satisfies the above range, the molten metal is agglomerated between the terminals 21 and 41. The resin composition flows into the voids.

  The heating temperature should just be more than melting | fusing point of the metal layer 12, for example, metal material can move in a thermosetting resin composition curable resin composition by adjusting heating time, such as shortening heating time. The upper limit is not particularly limited as long as it is in a range, that is, a range in which “curing of the thermosetting resin composition is not completed”.

  Specifically, the heating temperature is preferably 5 ° C. or more higher than the melting point of the metal layer 12, more preferably 10 ° C. or more, and even more preferably 20 ° C. or more.

Specifically, the heating temperature is appropriately set depending on the composition of the metal layer 12 and the thermosetting resin composition used, etc., preferably 100 ° C. or higher, more preferably 130 ° C. or higher, The temperature is more preferably 140 ° C. or higher, and most preferably 150 ° C. or higher. The heating temperature is preferably 260 ° C. or lower, more preferably 250 ° C. or lower, and 240 ° C. or lower from the viewpoint of preventing thermal deterioration of the semiconductor chip 20 and interposer 30 to be connected. More preferably it is.

  When the conductive connection sheet 1 is heated at such a temperature, the metal layer 12 is melted, and the molten metal layer 12, that is, the low melting point metal material can move in the resin composition layers 11 and 13.

  At this time, when a compound having a flux function is included in the thermosetting resin composition, even if an oxide film is formed on the surface of the metal layer 12 by the flux action of the compound having the flux function, the oxide film Will be removed by the flux action. Therefore, the molten metal material is in a state in which the wettability is enhanced and the metal bonding is promoted, so that the molten metal material is likely to be aggregated between the terminals 21 and 41 arranged opposite to each other.

  Further, even if an oxide film is formed on the surfaces of the terminals 21 and 41, this oxide film is also removed by the flux action of the compound having a flux function, and its wettability is enhanced. As a result, metal bonding with the metal material is promoted, and from this point of view, the molten metal material is easily aggregated between the terminals 21 and 41 arranged to face each other.

  In the present invention, since the metal layer 12 has a layer shape (foil shape), when the molten metal layer 12 is divided into a plurality of pieces and aggregates on the surfaces of the terminals 21 and 41, a part of the metal layer 12 is formed. It is possible to accurately suppress or prevent the resin composition layers 11 and 13 from remaining in the terminal 41 without aggregating. Therefore, it is possible to reliably prevent the occurrence of a leakage current due to a part of the metal layer 12 remaining in the sealing layer 80.

From the above, as shown in FIG. 7, the connection part 81 made of a metal material is formed between the terminals 21 and 41, and the terminal 21 and the terminal 41 are electrically connected via the connection part 81. Is done.
At this time, the sealing layer 80 is formed by filling the thermosetting resin composition surrounding the connection portion 81 without mixing the metal material. As a result, insulation between the adjacent terminals 21 and 41 is ensured, so that a short circuit between the adjacent terminals 21 and 41 is prevented.

  In the method of forming the connection part 81 and the sealing layer 80 using the conductive connection sheet 1 as described above, the connection part 81 is formed by selectively agglomerating the heated and melted metal material between the terminals 21 and 41, A sealing layer 80 composed of a thermosetting resin composition can be formed around the periphery. As a result, the insulation between the adjacent terminals 21 and 41 can be secured and the occurrence of leakage current can be reliably prevented, so that the connection reliability of the connection via the connection portion 81 between the terminals 21 and 41 is improved. Can do.

  In addition, even in a fine wiring circuit, electrical connection between a large number of terminals 21 and 41 can be performed collectively. Furthermore, in the next step [3], the mechanical strength of the connection portion 81 and the sealing layer 80 can be increased by curing the thermosetting resin composition.

  At this time, the total area in plan view of the connecting portion 81 formed between the terminals 21 and 41 arranged in the terminal region 211 is defined as S3.

  That is, in the connection method between terminals of the present invention, as shown in FIG. 7A, the 16 connection portions formed corresponding to the 16 terminals 21 arranged in the terminal region 211. The total area of the respective areas in plan view is S3.

Here, in the terminal region 211, the area S <b> 3 in the plan view of the connecting portion 81 and the terminal 21.
The area ratio S3 / S2 to the area S2 in the plan view is preferably 0.5 to 4, more preferably 0.6 to 3.8, and 0.7 to 3.6. Is more preferable.

  If the area ratio exceeds the upper limit, the metal material connecting the terminals 21 and 41 is relatively excessive, and if it is less than the lower limit, the metal material connecting the terminals 21 and 41 is relatively insufficient. ing. If the thickness of the metal layer 12 is increased, the area ratio S3 / S2 is increased, and if the thickness of the metal layer 12 is decreased, the area ratio S3 / S2 is decreased. It is preferable to adjust the thickness of the layer 12. As a result, it is possible to more accurately prevent the occurrence of unconnected terminals 21 and 41 due to a shortage of metal material, and the occurrence of non-aggregated terminals 21 and 41 due to surplus metal material. Can be suppressed.

  Further, the time required from the heat treatment start time at which the metal layer 12 is heat-treated to the heat treatment end time at which the connection portion 81 is formed is preferably 3 s to 300 s, and preferably 5 s to 200 s. More preferably, it is 7 to 100 s.

  This time indicates the time until the agglomeration of the molten metal of the metal layer 12 between the terminals 21 and 41 is completed.

  If this time exceeds the upper limit, the time until the molten metal completes agglomeration between the terminals 21 and 41 is delayed. Therefore, a resin composition having a relatively slow gel time must be selected. In addition, the constituent material of the resin composition may be limited.

  In this step [2], the semiconductor chip 20 and the interposer 30 may be heated in a pressurized state so that the distance between the opposing terminals 21 and 41 is reduced. For example, the distance between the terminals 21 and 41 facing each other can be increased by heating and pressurizing the semiconductor chip 20 and the interposer 30 in FIG. Since it can be controlled to be constant, it is possible to increase the electrical connection reliability by the connecting portion 81 between the opposing terminals 21 and 41.

  Furthermore, when applying pressure or heating, an ultrasonic wave or an electric field may be applied, or special heating such as laser or electromagnetic induction may be applied.

[3] Curing Step Next, in the heating step [2], after the connection portion 81 and the sealing layer 80 are formed, the sealing layer 80 is fixed by curing the thermosetting resin composition.

  Thereby, both the electrical reliability by the connection part 81 between the terminals 21 and 41 and the mechanical reliability by the sealing layer 80 are fully securable.

  In particular, in this embodiment, since the thermosetting resin composition having a high insulation resistance value at the time of high melt viscosity is used, the insulation of the sealing layer (insulating region) 80 can be more reliably ensured. .

Curing of the thermosetting resin composition can be performed by heating the thermosetting resin composition. The curing temperature of the thermosetting resin composition can be appropriately set according to the composition of the thermosetting resin composition. Specifically, the temperature is preferably at least 5 ° C. lower than the heating temperature in the heating step [2], and more preferably at least 10 ° C. lower. More specifically, it is preferably 100 ° C. or higher, more preferably 120 ° C. or higher, further preferably 130 ° C. or higher, and most preferably 150 ° C. or higher. Moreover, it is preferable that it is 300 degrees C or less, It is more preferable that it is 260 degrees C or less, It is more preferable that it is 250 degrees C or less, It is most preferable that it is 240 degrees C or less. When the curing temperature is within the above range, the thermosetting resin composition can be sufficiently cured while reliably preventing the conductive connection sheet 1 from being thermally decomposed.

  Through the steps as described above, the connection portion 81 and the sealing layer 80 are formed between the semiconductor chip 20 and the interposer 30.

<Method for Forming Connection Terminal of the Present Invention>
Next, the case where the connection part 81 and the sealing layer 80 are formed using the connection terminal forming method of the present invention will be described.

  In this case, first, the connection terminal 85 and the reinforcing layer 86 are formed on the surface on the terminal 21 side of the semiconductor chip 20 by applying the connection terminal forming method of the present invention, and then the connection terminal 85 and the reinforcing layer 86. By connecting (mounting) the semiconductor chip 20 provided with to the surface of the interposer 30 on the side of the terminal 41, the connecting portion 81 and the sealing layer 80 are formed.

  Hereinafter, a method for forming the connection terminal 85 and the reinforcing layer 86 on the surface on the terminal 21 side of the semiconductor chip 20 by applying the connection terminal forming method of the present invention will be described in detail.

  FIG. 8 is a longitudinal sectional view for explaining a method of forming a connection terminal corresponding to a terminal included in a semiconductor chip using the connection terminal forming method of the present invention. In the following description, the upper side in FIG. 8 is referred to as “upper” and the lower side is referred to as “lower”.

  In the method of forming the connection terminal 85 and the reinforcing layer 86 described below, there are an arrangement step of arranging the conductive connection sheet 1 on the surface of the semiconductor chip 20 on the terminal 21 side, and a heating step of heating the conductive connection sheet 1. doing.

  In addition, when forming the connection terminal 85 and the reinforcement layer 86, the case where the resin composition layers 11 and 13 with which the conductive connection sheet 1 is provided is composed of a thermosetting resin composition will be described.

  In the third embodiment in which the resin composition layers 11 and 13 included in the conductive connection sheet 1 are formed of a thermosetting resin composition, the disposing step of disposing the conductive connection sheet 1 on the terminal 21 side surface of the semiconductor chip 20. And a heating step of heating the conductive connection sheet 1 at a temperature that is equal to or higher than the melting point of the metal layer 12 and does not complete the curing of the thermosetting resin composition constituting the resin composition layers 11 and 13. .

Hereinafter, each process is explained in full detail.
[1] Arrangement Step First, as shown in FIG. 8A, a semiconductor chip 20 having terminals 21 on the lower surface side is prepared.

  Next, the conductive connection sheet 1 is thermocompression-bonded (arranged) to the surface on the terminal 21 side of the semiconductor chip 20 using an apparatus such as a roll laminator or a press.

  Here, the area ratio S1 / S2 in the connection terminal forming method of the present invention satisfies the same area ratio range as the connection method between the terminals of the present invention.

[2] Heating step Next, in the placement step [1], the conductive connection sheet 1 (metal layer 12) placed on the surface on the terminal 21 side of the semiconductor chip 20 is as shown in FIG. Heating is performed at a temperature equal to or higher than the melting point of the metal layer 12.

  Here, when the conductive connection sheet 1 having a metal material satisfying the range of the surface tension is used when heating at the melting point or higher of the metal layer 12, the metal material is excellent in self-cohesion force. The material itself tends to aggregate. As a result, the self-aggregated molten metal is likely to agglomerate to the terminals 21 and 41 because the contact opportunity to contact the terminals 21 and 41 increases.

  Furthermore, when the gel time of the thermosetting resin composition satisfies the above range, the molten metal having excellent self-cohesive force is not hindered by premature curing of the resin composition, and between the terminals 21 and 41. It can be suitably aggregated.

  Moreover, since the resin composition has fluidity when the viscosity of the thermosetting resin composition satisfies the above range, the molten metal is agglomerated between the terminals 21 and 41. The resin composition flows into the voids.

  The temperature for heating the conductive connection sheet 1 is set to the same temperature as the temperature for heating the conductive connection sheet 1 in the heating step [2] of the first embodiment.

  When the conductive connection sheet 1 is heated at such a temperature, the metal layer 12 is melted, and the molten metal layer 12, that is, the low melting point metal material can move in the resin composition layers 11 and 13.

  In the present invention, since the metal layer 12 has a layer shape (foil shape), when the molten metal layer 12 is divided into a plurality of pieces and aggregates on the surface of the terminal 21, a part of the metal layer 12 is a terminal 21. It can be accurately suppressed or prevented from remaining in the resin composition layers 11 and 13 without agglomerating. Therefore, it is possible to reliably prevent the occurrence of a leakage current due to a part of the metal layer 12 remaining in the reinforcing layer 86.

  From the above, as shown in FIG. 8C, the connection terminal 85 made of a metal material is formed on the surface of the terminal 21. At this time, the reinforcing layer 86 is formed by surrounding the connection terminal 85 and being filled with the thermosetting resin composition. As a result, insulation between the adjacent connection terminals 85 is ensured, so that a short circuit between the adjacent connection terminals 85 is reliably prevented.

  In the method for forming the connection terminal 85 and the reinforcing layer 86 as described above, the connection terminal 85 is formed by selectively aggregating the heated and melted metal material on the terminal 21, and the thermosetting resin composition is formed around the connection terminal 85. A reinforcing layer 86 can be formed. As a result, insulation between adjacent connection terminals 85 can be ensured.

  Further, even in the semiconductor chip 20 having a plurality of terminals 21 at a fine pitch, a plurality of connection terminals 85 can be collectively formed corresponding to the terminals 21.

  In this step [2], the conductive connection sheet 1 and the semiconductor chip 20 may be heated in a pressurized state so that the distance between the conductive connection sheet 1 and the terminal 21 is reduced. For example, the conductive connection sheet 1 and the terminal 21 are heated and pressed using means such as a known thermocompression bonding device in a direction in which the conductive connection sheet 1 and the semiconductor chip 20 in FIG. Since the distance can be controlled to be constant, it is possible to further enhance the aggregating ability of the molten metal material on the surface of the terminal 21.

Furthermore, when applying pressure or heating, an ultrasonic wave or an electric field may be applied, or special heating such as laser or electromagnetic induction may be applied.

  The connection terminal 85 and the reinforcing layer 86 are formed through the process [1] and the process [2] as described above. That is, the method for forming the connection terminal and the reinforcing layer of the present invention is applied to the arranging step [1] and the heating step [2] for forming the connecting terminal 85 and the reinforcing layer 86.

  In addition, when using curable resin as resin contained in the resin composition layers 11 and 13 like this embodiment, in the said heating process [2], the state which does not harden a thermosetting resin composition completely. It is preferable that Thus, when the semiconductor chip 20 provided with the connection terminals 85 and the reinforcing layer 86 is mounted on the surface of the interposer 30 on the terminal 41 side, the reinforcing layer 86 is heated to be in a molten state again. Will be able to.

  As described above, when the connection terminal 85 is formed on the surface on the terminal 21 side of the semiconductor chip 20 using the conductive connection sheet 1, the conductive connection sheet 1 is arranged and heated in a portion where the connection terminal 85 is to be formed. As a result, the molten metal layer 12 is selectively agglomerated on the terminal 21, and as a result, the connection terminal 85 is formed.

  By connecting the semiconductor chip 20 provided with the connection terminal 85 and the reinforcing layer 86 on the surface of the interposer 30 on the terminal 41 side, the connection terminal 85 and the reinforcing layer 86 are heated to connect the semiconductor chip 20. Since the terminal 85 is in a molten state again, the connection portion 81 and the sealing layer 80 can be formed between the semiconductor chip 20 and the semiconductor chip 20 by cooling thereafter.

  Here, the area ratio S3 / S2 in the connection terminal forming method of the present invention satisfies the same area ratio range as the connection method between the terminals of the present invention.

  And in this embodiment, since resin contained in the resin composition layers 11 and 13 contains curable resin and this thing also exists in an uncured state, the thermosetting resin composition is cured. As a result, the sealing layer 80 is fixed. Thereby, the mechanical strength of the connection part 81 and the sealing layer 80 can be raised.

  In the third embodiment, the case where the connection terminal forming method of the present invention is applied when the connection terminal 85 is formed so as to correspond to the terminal 21 included in the semiconductor chip 20 has been described. However, the present invention is limited to this case. However, it can be applied to the case where connection terminals (bumps) are formed on terminals (electrodes) included in electronic components used in various electronic devices. Examples of various electronic components include semiconductor wafers and flexible substrates. Is mentioned.

  As described above, the conductive connection sheet, the connection method between terminals, the formation method of the connection terminal, the semiconductor device, and the electronic device of the present invention have been described, but the present invention is not limited to these.

  For example, the configuration of each part of the conductive connection sheet of the present invention can be replaced with an arbitrary one that can exhibit the same function, or an arbitrary configuration can be added.

  Moreover, arbitrary processes may be added to the connection method between terminals and the formation method of a connection terminal of this invention as needed.

Next, specific examples of the present invention will be described.
1. Preparation of conductive connection sheet [Example 1]
First, the resin composition for forming the resin composition layer with which the conductive connection sheet is provided is prepared.
Thermosetting resin E1: Bisphenol A type liquid epoxy resin (manufactured by DIC Corporation, “EPICLON-840S”, epoxy equivalent 185 g / eq) 47.5 parts by weight Film-forming resin F1: Phenoxy resin (Mitsubishi Chemical Corporation) "YX-6554"
26.0 parts by weight Compound A1 having a flux function: Sebacic acid (“Sebacic acid” manufactured by Tokyo Chemical Industry Co., Ltd.) 18.0 parts by weight Curing agent K1: Phenol novolak resin (manufactured by Sumitomo Bakelite Co., Ltd., “PR-53647”) 8.0 parts by weight Curing accelerator B1: 2-Phenyl-4-methylimidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., “Curazole 2P4MZ”) 0.01 part by weight Silane coupling agent S1: 2- (3,4 -Epoxycyclohexyl) ethyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., "KBM-303") 0.5 parts by weight Epoxy resin E1, film-forming resin F1, curing agent K1, curing accelerator B1, shown above, By mixing the silane coupling agent S1 and dissolving in methyl ethyl ketone (MEK), the resin composition having a solid content concentration of 40% A varnish was prepared. And the obtained varnish was apply | coated to the polyester sheet using the comma coater, and it was made to dry on the conditions of 90 degreeC x 5 minutes, and obtained the film-form resin composition of 30 micrometers in thickness.

  Next, a metal foil (metal layer) (thickness 10 μm) made of metal material X1: Sn / Pb (Sn / Pb = 63/37 (weight ratio), melting point: 183 ° C.) was prepared as a base material.

  And by laminating the prepared film-like resin composition on both surfaces of the metal foil (metal layer) under the conditions of 60 ° C., 0.3 MPa, and 0.3 m / min, A conductive connection sheet provided with a resin composition layer having a thickness of 30 μm was produced.

[Examples 2 to 14, Comparative Examples 1 and 2]
A conductive connection sheet was produced in the same manner as in Example 1 except that the configuration of the conductive connection sheet was as shown in Table 1.

The configuration used in other than Example 1 is shown below.
Thermosetting resin E2: Methacrylic resin ("LG35" manufactured by Sumipex)
Film-forming resin F2: Acrylate ester copolymer (“SG-P3” manufactured by Nagase ChemteX Corporation)
Compound A2 having a flux function: 4-hydroxybenzoic acid (“4-hydroxybenzoic acid” manufactured by Tokyo Chemical Industry Co., Ltd.)
Inorganic filler C1: spherical silica (manufactured by Admatechs, “SE2050”, average particle size 0.5 μm)

Metal material X2: Sn / Ag / Cu (Sn / Ag / Cu = 96.5 / 3.0 / 0.5, melting point: 217 ° C.)
Metal material X3: Sn / Cu / Co (Sn / Cu / Co = 99.2 / 0.7 / 0.1, melting point: 227 ° C.)
Metal material X4: Sn / Ag / Cu (Sn / Ag / Cu = 87/3/10, melting point 230 ° C.)
Metal material X5: Sn / In (Sn / In = 44/56, melting point: 107 ° C.)

2. Next, connection between the terminals was performed using the conductive connection sheet of each example and each comparative example.

[2-1]
First, as a substrate, an FR-4 base material (thickness 0.1 mm) and a circuit layer (copper circuit, thickness 12 μm) are formed, and the connection formed by applying Ni / Au plating (thickness 3 μm) on the copper circuit. Two devices having terminals (terminal diameter: 100 μm, distance between centers of adjacent terminals: 300 μm) were prepared.

  At this time, in the terminal region, the metal layer and the terminal in a plan view are observed with an X-ray inspection apparatus (manufactured by i-Bit, FX300 type), the area S1 of the metal layer and the total area S2 of the terminal are calculated, and the area ratio S1 / S2 was calculated and summarized in Table 2.

[2-2]
Next, a conductive connection sheet is placed between the substrates having such a configuration, and in this state, thermocompression bonding is performed under the conditions shown in Table 2 using a thermocompression bonding apparatus (“TMV1-200ASB” manufactured by Tsukuba Mechanics Co., Ltd.). The terminals were electrically connected by forming a connection part between the terminals facing each other (gap between substrates: 50 μm). Then, the resin composition was hardened by heating at 180 degreeC for 1 hour, and the terminal connection body was obtained.

  At this time, in the terminal region, the connection part in plan view was observed with an X-ray inspection apparatus (manufactured by i-Bit, FX300 type), and the area S3 of the connection part was calculated. The area ratio S3 / S2 was calculated and summarized in Table 2.

3. Measurement of Physical Properties of Metal Material and Resin Composition The physical properties of the metal material and the resin composition included in the conductive connection sheets of each Example and each Comparative Example were measured in advance as follows. The results are shown in Table 1.

(1) Measurement of surface tension of metal material The surface tension at T + 20 ° C. measured by the dropping method when the metal material constituting the metal layer included in the conductive connection sheet of each example and each comparative example was heated and melted. Asked.

More specifically, the surface tension of the metal material was determined as follows.
First, a molten metal obtained by melting the metal material was obtained by heating the metal material to T + 20 ° C.

  Next, the molten metal was dropped from a nozzle having a diameter of 5 mm under a measurement condition at T + 20 ° C. in a nitrogen atmosphere.

  Then, the surface tension γ is obtained from the weight of the dropped molten metal, that is, the molten droplet, and the dimensions of the shape immediately before the molten droplet falls from the nozzle as shown in FIG.

(2) Measurement of gel time of thermosetting resin composition The gel time of the thermosetting resin composition which comprises the resin composition layer with which the conductive connection sheet of Examples 1-12 and Comparative Examples 1 and 2 is provided is determined by a hot plate method. It measured using.

More specifically, the gel time of this thermosetting resin composition was determined as follows.
From the time when 1 g of the thermosetting resin composition is placed on a hot plate maintained at T + 20 ° C., until the thermosetting resin composition does not pull the yarn even when the spatula is lifted up while stirring with a spatula. Time was measured.

(3) Measurement of melt viscosity of resin composition at T + 20 ° C. The melt viscosity of the thermosetting resin composition constituting the resin composition layer included in the conductive connection sheets of Examples 1 to 12 and Comparative Examples 1 and 2 is as follows. The calculation was performed as described above.

More specifically, the viscosity of this thermosetting resin composition was determined as follows.
About 10 mg of the obtained resin composition is precisely weighed, and using a differential scanning calorimeter (manufactured by Seiko Instruments Inc.), the heating rate is 5 ° C./min, 10 ° C./min, and 20 ° C./min. Used to measure the heating value of curing.

Next, using the Kamal equation model, POLYMER ENGINEERING AND SCIENCE, JANUARY, 1973, Vol. 13, no. 1 Kinetics and Thermal Characterization
The curing reaction rate α at time t when the resin composition was exposed to T + 20 ° C. was calculated according to the method described in of Thermoset Cure (MR Kamal and S. SOURUR). The used Kamal equation model formula is as shown in the following formula (B).

Furthermore, using the calculated curing reaction rate α and the Cross model, AIChE Journal Vol. 28, no. 2 Studies of Mold Filling and Curing in the Reaction Injection Molding Process (JM CASTRO and CW MACOSKO
), The melt viscosity of the resin composition after 10 seconds at T + 20 ° C., that is, the melt viscosity of the resin composition after being placed in an atmosphere of T + 20 ° C. for 10 seconds was calculated. The formula for calculating the melt viscosity according to the Cross model is as shown in the following mathematical formula (C).

4). Evaluation Method With respect to the obtained terminal connection body, the following evaluation method was used to evaluate the connection resistance between the opposing terminals and the presence or absence of residual solder in the insulating region. The results are shown in Table 3.

  In the terminal connection body produced in order to connect opposing terminals using the conductive connection sheet of each Example and each Comparative Example, other than connection resistance between terminals, conduction path (connection part) formability, and conduction path The presence or absence of a metal layer remaining in the sealing layer located in the region was measured or evaluated by the following method.

(1) Connection resistance The resistance between opposing terminals in the obtained terminal connection body is determined by a four-terminal method (resistance meter: manufactured by Iwasaki Tsushinki Co., Ltd., “Digital Multimeter VOA7510”, measurement probe: Hioki Electric Co., Ltd.) 12 points were measured by “Pin type”, and “A” was determined when the average value was less than 20 mΩ, “B” when 20 mΩ or more and less than 30 mΩ, and “C” when 30 mΩ or more.

(2) Presence or absence of residual solder The cross section of the obtained terminal connection body is observed with a scanning electron microscope (SEM) (manufactured by JEOL Ltd., model number “JSM-7401F”), and all metal layers (metal materials) are opposed to each other. 1 to 4 of the metal layer in the resin (sealing layer) other than between the terminals (connection portion) facing each other without contributing to the formation of the conduction path. The case where the location remained was determined as “B”, and the case where the location remained was determined as “C”.

(3) Comprehensive evaluation The above evaluations (1) and (2) were comprehensively judged and evaluated according to the evaluation criteria shown below.

A: When both evaluations (1) and (2) are A.
○: When either one of (1) and (2) is A and the other is B,
Or, when both evaluations of (1) and (2) are B.
(Triangle | delta): When either evaluation of (1) and (2) is B and the other evaluation is C.
X: When both evaluations of (1) and (2) are C.
These evaluation results are shown in Table 3.

  As shown in Table 3, by setting the surface tension of the metal material within the range, in each Example, the metal layer can be selectively aggregated between the terminals, and each evaluation is excellent. It was found that the result was obtained.

  On the other hand, in each comparative example, since the surface tension of the metal material does not satisfy the range, the metal layer cannot be selectively aggregated between the terminals, and each evaluation is obvious compared to each example. It became inferior result.

DESCRIPTION OF SYMBOLS 1 Conductive connection sheet 10 Semiconductor device 11 1st resin composition layer 12 Metal layer 13 2nd resin composition layer 20 Semiconductor chip 21 Terminal 30 Interposer 41 Terminal 60 Via 70 Bump 80 Sealing layer 81 Connection part 85 Connection terminal 86 Reinforcement layer X Void

Claims (12)

A resin composition layer composed of a resin composition containing a resin and a metal layer composed of a metal material having a melting point T ° C., which is used to form a connection portion that is electrically connected to a terminal of an electronic component A conductive connection sheet comprising a laminate comprising:
The metal material has a surface tension at T + 20 ° C. measured by a dropping method of 300 mN / m to 600 mN / m.   The conductive connection sheet according to claim 1, wherein the metal material is mainly composed of Sn or an Sn-based alloy.   The conductive connection sheet according to claim 1, wherein the resin composition is a thermosetting resin composition containing a thermosetting resin as the resin.   The conductive connection sheet according to claim 3, wherein the thermosetting resin composition has a gel time at T + 20 ° C. of 30 s to 600 s.   5. The conductive connection sheet according to claim 3, wherein the thermosetting resin composition has a melt viscosity after 10 seconds at the T + 20 ° C. of 0.01 Pa · s to 100 Pa · s.   Disposing on the electronic component having a terminal region where the terminal is disposed and heating to melt the metal material of the metal layer, agglomerating the molten metal around the terminal, The conductive connection sheet according to claim 1, which is used to form a connection portion.   7. The area ratio S <b> 3 / S <b> 2 is 0.5 to 4 in the terminal region, where S <b> 3 is an area of the connecting portion in plan view and S <b> 2 is an area of the terminal in plan view. Conductive connection sheet.   The said resin composition is the said thermosetting resin composition, and the said metal layer aggregates around the said terminal within the said gel time in T + 20 degreeC of the said thermosetting resin composition. 8. The conductive connection sheet according to 7.   An arrangement step of disposing the conductive connection sheet according to any one of claims 1 to 8 between the terminal of the electronic component and the terminal of the counter electronic component, and a melting point of the metal material or higher. And the connection between terminals characterized by having a heating process which heats the conductive connection sheet at a temperature at which the resin composition layer can be deformed, and a curing / solidification process for curing or solidifying the resin composition layer Method.   An arrangement step of disposing the conductive connection sheet according to any one of claims 1 to 8 on the electronic component having the terminal, a melting point of the metal material or higher, and the resin composition layer being deformable. And a heating step of heating the conductive connection sheet at a certain temperature.   The terminal which the said electronic component has, and the terminal which an opposing electronic component has are electrically connected through the connection part formed using the electrically conductive connection sheet in any one of Claim 1 thru | or 8. A semiconductor device characterized by the above. The terminal which the said electronic component has, and the terminal which an opposing electronic component has are electrically connected through the connection part formed using the electrically conductive connection sheet in any one of Claim 1 thru | or 8. Electronic equipment characterized by