JP2011187487A - Conductive connection sheet, method of making connection between terminals, method of forming connection terminal, and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a conductive connection sheet which selectively aggregates a metal material between a terminal of an electronic component and a terminal of a mounting substrate without making the metal material remain in a resin component and electrically connects the terminals to each other, a method of establishing connection between terminals using the conductive connection sheet, a method of forming connection terminals, and a highly reliable electronic apparatus. <P>SOLUTION: The conductive connection sheet 1 includes resin composition layers 11 and 13 and a metal layer 12, and is used to electrically connect a semiconductor device (electronic component) 10 to a mounting substrate 5. The conductive connection sheet 1 is composed of a first portion 15 which is set between the semiconductor device 10 and the mounting substrate 5 when they are electrically connected to each other, and a second portion 16 other than the first portion 15. A metal material constituting the metal layer 12 that corresponds to the first portion 15 is larger in volume than a metal material constituting the metal layer 12 that corresponds to the second portion 16. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a conductive connection sheet, a method for connecting terminals, a method for forming connection terminals, and an electronic device.

  In recent years, along with the demand for higher functionality and miniaturization of electronic equipment, the pitch between connection terminals in electronic materials is becoming increasingly narrow, and the connection between terminals in a fine wiring circuit is also becoming more sophisticated.

  As an inter-terminal connection method, for example, when an electronic component such as an IC chip is electrically connected to a circuit board (mounting board), a large number of terminals are connected using an anisotropic conductive adhesive or an anisotropic conductive film. Flip chip connection technology for connecting in a lump is known. Such an anisotropic conductive adhesive or anisotropic conductive film is a film or paste in which conductive particles are dispersed in an adhesive mainly composed of a thermosetting resin, and the electronic member to be connected thereto By disposing them in between and thermocompression bonding, a large number of opposing terminals can be connected together, while insulation between adjacent terminals can be ensured by the resin in the adhesive.

  However, in the anisotropic conductive adhesive or anisotropic conductive film, it is difficult to control the aggregation of the conductive particles, and the conductive particles and the terminals or the conductive particles face each other without sufficiently contacting each other. Some of the terminals do not conduct, or conductive particles remain in the resin (insulating region) other than between the opposing terminals (conducting region), and insulation between adjacent terminals is not sufficiently secured. There was a problem. For this reason, it was difficult to cope with further narrowing of the pitch between terminals.

  On the other hand, when manufacturing a connection terminal on an electronic member, conventionally, a solder paste is printed on a substrate provided with a metal pad, and the solder paste is heated and melted using a solder reflow apparatus or the like. However, in this method, when the connection terminals have a narrow pitch, the cost of the mask used when printing the solder paste increases, and if the connection terminals are small, printing may not be possible.

  Also, in the method in which solder balls are mounted on the connection terminals and the solder balls are heated and melted using a solder reflow device or the like, if the connection terminals are small, the manufacturing cost of the solder balls increases, and the solder balls having a small diameter In some cases, it was technically difficult to fabricate.

JP-A 61-276873 JP 2004-260131 A

  In order to solve such problems, a conductive connection sheet composed of a laminate including a resin composition layer containing a resin component and a metal layer composed of a low melting point metal material has been studied. .

  When the low-melting metal material is heated at a temperature equal to or higher than the melting point in a state where the conductive connection sheet having such a configuration is disposed between the electronic component and the mounting substrate, the molten metal material is selectively used as the electronic component and the circuit board. A metal material that agglomerates between terminals each having, and a resin component is filled in a region other than between the terminals, so that a plurality of terminals of the electronic component and the circuit board are selectively agglomerated collectively. Furthermore, the insulation between adjacent terminals can be ensured by the resin component contained in the resin composition.

  However, in the conductive connection sheet having such a configuration, in the region where the electronic component is mounted on the mounting substrate, as described above, the metal material derived from the metal layer is selectively aggregated between the terminals included in these, Although the terminals can be electrically connected to each other, the metal material remains in the resin component because there are no terminals that should agglomerate the metal material in the area where the electronic components on the mounting board are not mounted. As a result, there arises a problem that sufficient insulation between adjacent terminals cannot be secured.

  Therefore, the object of the present invention is to selectively agglomerate the metal material between the terminals of the electronic component and the mounting board without electrically leaving the metal material in the resin component, and to electrically connect these terminals. An object of the present invention is to provide a conductive connection sheet that can be used, a connection method between terminals using the conductive connection sheet, a method of forming a connection terminal, and a highly reliable electronic device.

Such an object is achieved by the present invention described in the following (1) to (20).
(1) An electronic component composed of a laminate including a resin composition layer containing a resin component and a metal layer made of a low-melting-point metal material, and electrically mounting the electronic component and a mounting substrate on which the electronic component is mounted A conductive connection sheet used to connect to
When electrically connecting the electronic component and the mounting substrate, a first portion to be disposed between the electronic component and the mounting substrate, and a second portion other than the first portion, Consists of
The amount of the metal material constituting the metal layer corresponding to the first portion is larger than the amount of the metal material constituting the metal layer corresponding to the second portion. Conductive connection sheet.

  (2) The conductive connection sheet according to (1), wherein a plurality of the electronic components are mounted on the mounting substrate.

  (3) The conductive connection sheet according to (1) or (2), wherein in the first portion, the thickness of the metal layer is greater than the thickness of the metal layer in the second portion.

  (4) The conductive connection sheet according to any one of (1) to (3), wherein the metal layer is partially provided in the second portion.

  (5) The mounting board and the electronic component both have terminals, and the terminals are electrically connected to each other through a connection portion formed using the conductive connection sheet. The conductive connection sheet according to any one of the above.

  (6) The conductive connection sheet according to any one of (1) to (5), wherein the resin composition layer includes a resin composition containing the resin component and a compound having a flux function.

  (7) The conductive connection sheet according to (6), wherein the compound having the flux function includes a compound having at least one of a phenolic hydroxyl group and a carboxyl group.

(8) The conductive connection sheet according to (6) or (7), wherein the compound having the flux function includes a compound represented by the following general formula (1).
_{HOOC- (CH 2) n-COOH} ····· (1)
(In Formula (1), n is an integer of 1-20.)

［式中、Ｒ¹〜Ｒ⁵は、それぞれ独立して、１価の有機基であり、Ｒ¹〜Ｒ⁵の少なくとも一つは水酸基である。］

［式中、Ｒ⁶〜Ｒ²⁰は、それぞれ独立して、１価の有機基であり、Ｒ⁶〜Ｒ²⁰の少なくとも一つは水酸基またはカルボキシル基である。］ (9) The conductive connection sheet according to (6) or (7), wherein the compound having the flux function contains at least one of compounds represented by the following general formula (2) and the following general formula (3). .

[Wherein, R ^{1 to} R ⁵ are each independently a monovalent organic group, and at least one of R ^{1 to} R ⁵ is a hydroxyl group. ]

[Wherein, R ^{6 to} R ²⁰ are each independently a monovalent organic group, and at least one of R ^{6 to} R ²⁰ is a hydroxyl group or a carboxyl group. ]

  (10) The conductive connection sheet according to any one of (6) to (9), wherein the content of the compound having the flux function in the resin composition is 1 to 50% by weight.

  (11) The metal layer includes tin (Sn), lead (Pb), silver (Ag), bismuth (Bi), indium (In), zinc (Zn), nickel (Ni), antimony (Sb), iron ( (1) to (10) which is an alloy of at least two kinds of metals selected from the group consisting of Fe), aluminum (Al), gold (Au), germanium (Ge) and copper (Cu) or a simple substance of tin. The conductive connection sheet according to any one of the above.

  (12) The conductive connection sheet according to (11), wherein the metal layer includes a Sn—Pb alloy, a Sn—Ag—Cu alloy, or a Sn—Ag alloy as a main material.

  (13) The conductive connection sheet according to (12), wherein the metal layer is composed mainly of a Sn-37Pb alloy or a Sn-3.0Ag-0.5Cu alloy.

  (14) The laminate is composed of two resin composition layers and one metal layer, and the resin composition layer, the metal layer, and the resin composition layer are laminated in this order. The conductive connection sheet according to any one of (1) to (13).

  (15) The conductive connection sheet according to any one of (1) to (14), wherein the electronic component is a semiconductor device.

(16) An arrangement step of arranging the conductive connection sheet according to any one of (1) to (15) between the electronic component and the mounting substrate;
A heating step of heating the conductive connection sheet at a temperature that is equal to or higher than the melting point of the metal material and does not complete the curing of the resin composition;
And a curing step for curing the resin composition.

(17) An arrangement step of arranging the conductive connection sheet according to any one of (1) to (15) between the electronic component and the mounting substrate;
A heating step of heating the conductive connection sheet at a temperature that is equal to or higher than the melting point of the metal material and the resin composition is softened;
And a solidifying step for solidifying the resin composition.

(18) An arrangement step of arranging the conductive connection sheet according to any one of (1) to (15) on the mounting substrate;
And a heating step of heating the conductive connection sheet at a temperature that is equal to or higher than the melting point of the metal material and does not complete the curing of the resin composition.

(19) An arrangement step of arranging the conductive connection sheet according to any one of (1) to (15) on the mounting substrate;
And a heating step of heating the conductive connection sheet at a temperature that is equal to or higher than the melting point of the metal material and the resin composition is softened.

  (20) An electronic apparatus comprising the electronic component and the mounting board that are electrically connected using the conductive connection sheet according to any one of (1) to (15).

  When the conductive connection sheet of the present invention is used to form a connection part that electrically connects terminals, a sufficient amount of metal material is applied to the first part disposed between the electronic component and the mounting substrate. While being able to supply, it can prevent supplying excess metal material to 2nd parts other than a 1st part. Therefore, when the molten metal material is selectively agglomerated between the terminals to form the connection portion and the sealing layer composed of the resin component is formed around it, the metal material is contained in the sealing layer. Can be suppressed or prevented accurately. As a result, insulation between adjacent terminals is ensured by the sealing layer, so that it is possible to reliably prevent a leak current from occurring between adjacent terminals.

  Furthermore, when applied to the formation of a connection terminal provided corresponding to the electrode using a conductive connection sheet, the metal material that has been heated and melted is selectively agglomerated on the electrode to form a connection terminal. When the reinforcing layer composed of the resin component is formed, it is possible to accurately suppress or prevent the metal material from remaining in the reinforcing layer. As a result, insulation between adjacent connection terminals is ensured by the reinforcing layer, so that leakage current can be reliably prevented from occurring between adjacent connection terminals.

It is a longitudinal cross-sectional view which shows an example of the semiconductor device electrically connected to a mounting substrate using the conductive connection sheet of this invention. It is a top view which shows an example of the mounting substrate which electrically connects a semiconductor device using the conductive connection sheet of this invention. It is a longitudinal section showing an embodiment of a conductive connection sheet of the present invention. It is a longitudinal cross-sectional view for demonstrating the method of forming a connection part and a sealing layer between a mounting substrate and a semiconductor device using the connection method between the terminals of this invention. It is a longitudinal cross-sectional view for demonstrating the method of forming a connection terminal corresponding to the terminal with which a mounting board is provided using the formation method of the connection terminal of this invention. It is a longitudinal cross-sectional view which shows the other structure of the electrically conductive connection sheet | seat of this invention. It is a top view which shows the structure in the 2nd part of the metal layer with which the conductive connection sheet of another structural example is provided.

  Hereinafter, a conductive connection sheet, a connection method between terminals, a connection terminal formation method, and an electronic device according to the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

  First, prior to describing the conductive connection sheet of the present invention, a semiconductor device (electronic component) to be electrically bonded using the conductive connection sheet of the present invention and a mounting substrate on which the semiconductor device is mounted will be described. .

<Semiconductor device>
FIG. 1 is a longitudinal sectional view showing an example of a semiconductor device electrically connected to a mounting substrate using the conductive connection sheet of the present invention. In the following description, the upper side in FIG. 1 is referred to as “upper” and the lower side is referred to as “lower”.

  A semiconductor device 10 shown in FIG. 1 includes a semiconductor chip (semiconductor element) 20, an interposer (substrate) 30 that supports the semiconductor chip 20, and a plurality of conductive terminals.

  The interposer 30 is an insulating substrate and is made of various resin materials such as polyimide, epoxy, cyanate, bismaleimide triazine (BT resin). The plan view shape of the interposer 30 is usually a square such as a square or a rectangle.

  On the upper surface (one surface) of the interposer 30, for example, a terminal 41 made of a conductive metal material such as copper is provided in a predetermined shape.

  The interposer 30 is formed with a plurality of vias (through holes: through holes) (not shown) penetrating in the thickness direction.

Each terminal 70 has one end (upper end) electrically connected to a part of the terminal 41 through each via, and the other end (lower end) protrudes from the lower surface (the other surface) of the interposer 30. Yes.
The terminal 70 is made of a conductive metal material such as copper, for example, like the terminal 41.

  A terminal 41 is formed on the interposer 30. The terminal 21 included in the semiconductor chip 20 is electrically connected to the terminal 41 via a connection portion 81 composed mainly of a brazing material such as solder, silver brazing, copper brazing, or phosphor copper brazing. .

  Further, a gap between the semiconductor chip 20 and the interposer 30 is filled with a sealing material made of various resin materials, and a sealing layer 80 is formed by a cured product of this sealing material. .

<Mounting board>
FIG. 2 is a plan view showing an example of a mounting substrate for electrically connecting semiconductor devices using the conductive connection sheet of the present invention. In the following description, the upper side in FIG. 2 is referred to as “upper” and the lower side is referred to as “lower”.
The mounting substrate 5 shown in FIG. 2 has a substrate 50, terminals 6, and wirings 9.

  The substrate 50 is a support for supporting various components such as the terminal 6, the wiring 9 provided thereon, and the semiconductor device 10 mounted on the mounting substrate 5.

The constituent material of the substrate 50 is not particularly limited. For example, the fiber base material is impregnated with a thermosetting resin such as a flexible substrate made of a base material such as polyimide, an epoxy resin, a cyanate resin, or a bismaleimide triazine (BT resin). Examples thereof include a rigid substrate containing a base material that has been allowed to stand.
On the substrate 50, terminals 6 and wirings 9 electrically connected to the terminals 6 are provided.

  The terminal 6 includes a terminal 61, a terminal 62, a terminal 63, and a terminal 64. Among these, the terminals 61, 62, and 63 constitute terminals for connecting (mounting) the semiconductor device, and the terminal 64 constitutes a terminal for connecting to an external member.

  A plurality of terminals 61, 62, and 63 for connecting the semiconductor devices are provided on the substrate 50 (in the present embodiment, 14 terminals 61 and 62 and 18 terminals 63, respectively). These terminals 61, 62, 63 are arranged on the substrate 50 so as to form a square shape, and a mounting region 65 in which a semiconductor device is mounted (mounted) by a region surrounded by the terminals 61, 62, 63. , 66, 67 are configured.

  The wiring 9 includes a wiring 91, a wiring 92 and a wiring 93. Among these, the wiring 91 connects the external member and the semiconductor device, the wiring 92 connects the semiconductor devices to each other, and the wiring 93 is connected to the semiconductor device and other members (on the substrate 50). (Not shown).

  Examples of the constituent material of the terminal 6 and the wiring 9 include metals such as Ni, Pd, Pt, Ag, Cu, and Al, or alloys containing these metals.

  In the mounting substrate 5 having such a configuration, the semiconductor device is mounted in the mounting regions 65, 66, and 67. In the present embodiment, the semiconductor device 10 is mounted in the mounting region 65.

  The conductive connection sheet of the present invention is used for mounting the semiconductor device on the mounting substrate 5, that is, for electrical connection between the mounting substrate 5 and the semiconductor device.

  In other words, the connection part 87 and the sealing layer 88 shown in FIG. 4 are formed by the connection method between the terminals of the present invention described later using the conductive connection sheet of the present invention, and further, the connection of the present invention described later. The connection terminal 85 and the reinforcing layer 86 shown in FIG. 5 are formed by the terminal formation method.

Hereinafter, the conductive connection sheet of the present invention will be described.
<Conductive connection sheet>
FIG. 3 is a longitudinal sectional view showing an embodiment of the conductive connection sheet of the present invention, and more specifically, A in FIG. 2 when the conductive connection sheet of the present invention is disposed between the semiconductor device and the mounting substrate. It is a longitudinal cross-sectional view in the -A line. In the following description, the upper side in FIG. 3 is referred to as “upper” and the lower side is referred to as “lower”.

  The conductive connection sheet of the present invention is composed of a laminate including a resin composition layer containing a resin component and a metal layer composed of a low melting point metal material, and an electronic component and a mounting for mounting the electronic component This is used to electrically connect a substrate, and is first disposed between the semiconductor device and the mounting substrate when electrically connecting the semiconductor device (electronic component) and the mounting substrate. And the second part other than the first part, and the amount of the metal material constituting the metal layer corresponding to the first part is the metal constituting the metal layer corresponding to the second part. It is characterized by being larger than the amount of material.

  Using such a conductive connection sheet, when applied to the formation of a connection portion that electrically connects terminals, a sufficient amount of metal material is applied to the first portion disposed between the electronic component and the mounting substrate. While being able to supply, it can prevent supplying excess metal material to 2nd parts other than a 1st part. Therefore, when the molten metal material is selectively agglomerated between the terminals to form the connection portion and the sealing layer composed of the resin component is formed around it, the metal material is contained in the sealing layer. Can be suppressed or prevented accurately. As a result, insulation between adjacent terminals is ensured by the sealing layer, so that it is possible to reliably prevent a leak current from occurring between adjacent terminals.

  Furthermore, when applied to the formation of a connection terminal provided corresponding to the electrode using a conductive connection sheet, the metal material that has been heated and melted is selectively agglomerated on the electrode to form a connection terminal. When the reinforcing layer composed of the resin component is formed, it is possible to accurately suppress or prevent the metal material from remaining in the reinforcing layer. As a result, insulation between adjacent connection terminals is ensured by the reinforcing layer, so that leakage current can be reliably prevented from occurring between adjacent connection terminals.

  In the present embodiment, as shown in FIG. 3, the conductive connection sheet 1 is formed so that the first resin composition layer 11, the metal layer 12, and the second resin composition layer 13 are joined to each other in this order. A laminated body having a laminated three-layer structure, that is, a three-layer structure having a configuration in which the metal layer 12 is bonded to each other between the first resin composition layer 11 and the second resin composition layer 13. A first portion 15 to be disposed between the semiconductor device 10 and the mounting substrate 5 when the semiconductor device 10 and the mounting substrate 5 are electrically connected; The second portion 16 other than the first portion 15 is included.

  In the conductive connection sheet 1 having such a configuration, the first resin composition layer 11 and the second resin composition layer 13 are composed of a resin composition containing a resin component, and the metal layer 12 is a low melting point metal material. The metal layer 12 corresponding to the first portion 15 is thicker than the metal layer 12 corresponding to the second portion 16.

  Hereinafter, although each layer which comprises the conductive connection sheet 1 is demonstrated one by one, both the 1st resin composition layer 11 and the 2nd resin composition layer 13 are comprised with the resin composition containing a resin component. Therefore, the first resin composition layer 11 will be described as a representative. Hereinafter, the first resin composition layer 11 and the second resin composition layer 13 may be simply referred to as “resin composition layer 11” and “resin composition layer 13”.

<< Resin composition layer 11 >>
In the present embodiment, the resin composition layer 11 is composed of a resin composition containing a resin component.

  In the present invention, the resin composition can be used in a liquid or solid form at room temperature. In the present specification, “liquid at room temperature” means a state that does not have a certain form at room temperature (about 25 ° C.), and includes a paste form.

  The resin composition is not particularly limited as long as it contains a resin component, and a curable resin composition or a thermoplastic resin composition can be used.

  Examples of the curable resin composition include a curable resin composition that is cured by heating and a curable resin composition that is cured by irradiation with actinic radiation. Among these, a curable resin that is cured by heating. A composition is preferably used. The curable resin composition cured by heating is excellent in mechanical properties such as linear expansion coefficient and elastic modulus after curing.

  In addition, the thermoplastic resin composition is not particularly limited as long as it is flexible enough to be molded by heating to a predetermined temperature.

(A) Curable resin composition A curable resin composition contains a curable resin component, and is melted and cured by heating.

  In addition to the curable resin component, the curable resin composition contains a compound having a flux function, a film-forming resin, a curing agent, a curing accelerator, a silane coupling agent, and the like as necessary. May be.

Hereinafter, various materials contained in the curable resin composition will be described in detail.
(I) Curable resin component Although a curable resin component will not be specifically limited if it melts and hardens | cures by heating, Usually, what can be used as an adhesive agent component for semiconductor device manufacture is used.

  Such a curable resin component is not particularly limited. For example, epoxy resin, phenoxy resin, silicone resin, oxetane resin, phenol resin, (meth) acrylate resin, polyester resin (unsaturated polyester resin), diallyl phthalate resin , Maleimide resin, polyimide resin (polyimide precursor resin), bismaleimide-triazine resin and the like. In particular, the use of a thermosetting resin containing at least one selected from the group consisting of epoxy resins, (meth) acrylate resins, phenoxy resins, polyester resins, polyimide resins, silicone resins, maleimide resins, and bismaleimide-triazine resins. preferable. Among these, an epoxy resin is preferable from the viewpoint of excellent curability and storage stability, heat resistance, moisture resistance, and chemical resistance of a cured product. In addition, these curable resin components may be used individually by 1 type, or may use 2 or more types together.

  The epoxy resin is not particularly limited, and any epoxy resin that is liquid at room temperature and solid at room temperature can be used. It is also possible to use an epoxy resin that is liquid at room temperature and an epoxy resin that is solid at room temperature. When the curable resin composition is liquid, it is preferable to use an epoxy resin that is liquid at room temperature. When the curable resin composition is solid, both liquid and solid epoxy resins should be used. Furthermore, it is preferable that the curable resin composition contains a film-forming resin component.

  Although it does not specifically limit as a liquid epoxy resin at room temperature (25 degreeC), A bisphenol A type epoxy resin, a bisphenol F type epoxy resin, etc. are mentioned, Among these, it can use combining 1 type or 2 types. .

  The epoxy equivalent of the epoxy resin that is liquid at room temperature is preferably 150 to 300 g / eq, more preferably 160 to 250 g / eq, and particularly preferably 170 to 220 g / eq. When the epoxy equivalent is less than the lower limit, depending on the type of epoxy resin used, the shrinkage of the cured product tends to increase, and the semiconductor device 10 and the electronic device including the semiconductor device 10 may be warped. Moreover, when it exceeds the said upper limit, when it is set as the structure which uses a film-forming resin component together with a curable resin composition, it may show the tendency for the reactivity with a film-forming resin component, especially a polyimide resin to fall. .

  Further, the epoxy resin solid at room temperature (25 ° C.) is not particularly limited, but bisphenol A type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, glycidylamine type epoxy resin. , A glycidyl ester type epoxy resin, a trifunctional epoxy resin, a tetrafunctional epoxy resin, and the like. Among these, one kind or two or more kinds can be used in combination. Among these, solid trifunctional epoxy resins, cresol novolac type epoxy resins, and the like are preferably used.

  In addition, 150-3000 g / eq is preferable, as for the epoxy equivalent of a solid epoxy resin at room temperature, 160-2500 g / eq is more preferable, and 170-2000 g / eq is especially preferable.

  The softening point of the epoxy resin that is solid at room temperature is preferably about 40 to 120 ° C, more preferably about 50 to 110 ° C, and particularly preferably about 60 to 100 ° C. When the softening point is within the above range, tackiness of the curable resin composition can be suppressed, and the softening point can be easily handled.

  Moreover, in the curable resin composition, the blending amount of the curable resin component described above can be appropriately set according to the form of the curable resin composition to be used.

  For example, in the case of a liquid curable resin composition, the blending amount of the curable resin component is preferably 10% by weight or more, more preferably 15% by weight or more in the curable resin composition. It is preferably 20% by weight or more, more preferably 25% by weight or more, still more preferably 30% by weight or more, and particularly preferably 35% by weight or more. Further, it is preferably less than 100% by weight, more preferably 95% by weight or less, further preferably 90% by weight or less, still more preferably 75% by weight or less, and 65% by weight or less. Is still more preferable, and it is especially preferable that it is 55 weight% or less.

  In the case of a solid curable resin composition, the amount of the curable resin component in the curable resin composition is preferably 5% by weight or more, and preferably 10% by weight or more. More preferably, it is more preferably 15% by weight or more, and particularly preferably 20% by weight or more. Further, it is preferably 90% by weight or less, more preferably 85% by weight or less, still more preferably 80% by weight or less, still more preferably 75% by weight or less, and 65% by weight or less. It is still more preferable that it is 55% by weight or less.

  When the blending amount of the curable resin component in the curable resin composition is within the above range, the electrical connection strength and the mechanical adhesive strength between the terminals 70 and 61 can be sufficiently secured.

(Ii) Film-forming resin component As described above, when a solid resin is used as the curable resin composition, in addition to the curable resin component, the film-forming resin is further included in the curable resin composition. A constitution containing a resin component is preferred.

  Such a film-forming resin component is not particularly limited as long as it is soluble in an organic solvent and has a film-forming property alone, and is any one of a thermoplastic resin or a thermosetting resin. Can also be used, and these can also be used in combination.

  Specifically, the film-forming resin component is not particularly limited. For example, (meth) acrylic resin, phenoxy resin, polyester resin, polyurethane resin, polyimide resin, polyamideimide resin, siloxane-modified polyimide resin, polybutadiene resin , Polypropylene resin, styrene-butadiene-styrene copolymer, styrene-ethylene-butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, Examples include acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, polyvinyl acetate, nylon, and the like. In combination it can be used. Among these, (meth) acrylic resins, phenoxy resins, polyester resins, polyamide resins and polyimide resins are preferable.

  In this specification, “(meth) acrylic resin” refers to a polymer of (meth) acrylic acid and its derivatives, or a co-polymerization of (meth) acrylic acid and its derivatives and other monomers. Means coalescence. Here, the expression “(meth) acrylic acid” or the like means “acrylic acid or methacrylic acid” or the like.

  The (meth) acrylic resin is not particularly limited. For example, polyacrylic acid such as polyacrylic acid, polymethacrylic acid, polymethyl acrylate, polyethyl acrylate, polybutyl acrylate, and polyacrylic acid-2-ethylhexyl. Acid ester, polymethyl methacrylate, polyethyl methacrylate, polymethacrylate such as polybutyl methacrylate, polyacrylonitrile, polymethacrylonitrile, polyacrylamide, butyl acrylate-ethyl acrylate-acrylonitrile copolymer, acrylonitrile- Butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, acrylonitrile-styrene copolymer, methyl methacrylate-styrene copolymer, methacryl Methyl-acrylonitrile copolymer, methyl methacrylate-α-methylstyrene copolymer, butyl acrylate-ethyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate-methacrylic acid copolymer, butyl acrylate-ethyl acrylate-acrylonitrile 2-hydroxyethyl methacrylate-acrylic acid copolymer, butyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate copolymer, butyl acrylate-acrylonitrile-acrylic acid copolymer, butyl acrylate-ethyl acrylate-acrylonitrile copolymer Examples thereof include a polymer and an ethyl acrylate-acrylonitrile-N, N-dimethylacrylamide copolymer, and one or more of these can be used in combination. Of these, butyl acrylate-ethyl acrylate-acrylonitrile copolymer and ethyl acrylate-acrylonitrile-N, N-dimethylacrylamide are preferable.

  Further, the skeleton of the phenoxy resin is not particularly limited, and examples thereof include bisphenol A type, bisphenol F type, and biphenyl type.

  The polyimide resin is not particularly limited as long as it has an imide bond in the repeating unit. For example, the polyimide resin is obtained by reacting diamine and acid dianhydride and heating and dehydrating and ring-closing the resulting polyamic acid. Can be mentioned.

  Examples of the diamine include, but are not limited to, aromatics such as 3,3′-dimethyl-4,4′diaminodiphenyl, 4,6-dimethyl-m-phenylenediamine, and 2,5-dimethyl-p-phenylenediamine. Examples include diamines and siloxane diamines such as 1,3-bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane, and one or more of these can be used in combination. .

  Examples of the acid dianhydride include 3,3,4,4′-biphenyltetracarboxylic acid, pyromellitic dianhydride, 4,4′-oxydiphthalic dianhydride, and the like. One kind or a combination of two or more kinds can be used.

  The polyimide resin may be either soluble or insoluble in the solvent, but it is easy to varnish when mixed with other components (curable resin component), and is a solvent because it is easy to handle. Soluble ones are preferred. In particular, a siloxane-modified polyimide resin is preferably used because it can be dissolved in various organic solvents.

  The weight average molecular weight of the film-forming resin is not particularly limited, but is preferably about 8,000 to 1,000,000, more preferably about 8,500 to 950,000, and 9,000 to More preferably, it is about 900,000. When the weight average molecular weight of the film-forming resin is within the above range, the film-forming property can be improved, and the fluidity of the resin composition layer 11 before curing can be suppressed.

  In addition, the weight average molecular weight of film-forming resin can be measured by GPC (gel permeation chromatography), for example.

  In addition, as the film-forming resin component, a commercial product of this product can be used, and further, various plasticizers, stabilizers, inorganic fillers, antistatic agents, pigments, etc., as long as the effects of the present invention are not impaired. What mix | blended the additive can also be used.

  Moreover, in the curable resin composition, the blending amount of the film-forming resin component described above can be appropriately set according to the form of the curable resin composition to be used.

  For example, in the case of a solid curable resin composition, the blending amount of the film-forming resin component is preferably 5% by weight or more and preferably 10% by weight or more in the curable resin composition. Is more preferable, and it is further more preferable that it is 15 weight% or more. Further, it is preferably 50% by weight or less, more preferably 45% by weight or less, and further preferably 40% by weight or less. When the blending amount of the film-forming resin component is within the above range, the fluidity of the curable resin composition before melting can be suppressed, and the resin composition layer (conductive connection material) 11 can be easily handled. It becomes.

(Iii) Compound having a flux function It is preferable that the curable resin composition further contains a compound having a flux function in addition to the curable resin component. The compound having the flux function has an action of reducing the surface oxide film formed on the terminals 70 and 61 and the metal layer 12. Therefore, if such a compound is contained in the curable resin composition, the surfaces of the terminals 70 and 61 and the metal layer 12 will be described in detail as will be described later in connection method and sealing layer formation method. Even if an oxide film is formed, the oxide film can be reliably removed by the action of this compound. As a result, the molten metal layer 12 is aggregated between the terminals 70 and 61 with higher selectivity.

  Although it does not specifically limit as a compound which has such a flux function, For example, the compound which has a phenolic hydroxyl group and / or a carboxyl group is used preferably.

  Examples of the compound having a phenolic hydroxyl group include phenol, o-cresol, 2,6-xylenol, p-cresol, m-cresol, o-ethylphenol, 2,4-xylenol, 2,5-xylenol, m- Ethylphenol, 2,3-xylenol, meditol, 3,5-xylenol, p-tert-butylphenol, catechol, p-tert-amylphenol, resorcinol, p-octylphenol, p-phenylphenol, bisphenol F, bisphenol AF, biphenol Monomers containing phenolic hydroxyl groups such as diallyl bisphenol F, diallyl bisphenol A, trisphenol, tetrakisphenol, phenol novolac resins, o-cresol novolac resins, bisphenols Lumpur F novolak resins, resins containing phenolic manufactured hydroxyl group, such as bisphenol A novolac resins. Can be used singly or in combination of two or more of them.

  Examples of the compound having a carboxyl group include aliphatic acid anhydrides, alicyclic acid anhydrides, aromatic acid anhydrides, aliphatic carboxylic acids, and aromatic carboxylic acids. Examples of the aliphatic acid anhydride include succinic anhydride, polyadipic acid anhydride, polyazeline acid anhydride, polysebacic acid anhydride, and the like. Examples of the alicyclic acid anhydride include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylhymic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, methylcyclohexene dicarboxylic acid. An anhydride etc. are mentioned. Examples of the aromatic acid anhydride include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic acid anhydride, ethylene glycol bistrimellitate, glycerol trislimitate, etc. Species or a combination of two or more can be used.

The aliphatic carboxylic acid is not particularly limited, for example, formic acid, acetic acid, propionic acid, butyric acid, valeric acid, pivalic acid, caproic acid, caprylic acid, lauric acid, myristic acid, palmitic acid, stearic acid, acrylic acid, Methacrylic acid, crotonic acid, oleic acid, fumaric acid, maleic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, sebacic acid, dodecanedioic acid, pimelic acid, etc. Two or more kinds can be used in combination. Among these, the following formula (1):
_{HOOC- (CH 2) n -COOH (} 1)
(In Formula (1), n is an integer of 1-20.)
Of these, adipic acid, sebacic acid, and dodecanedioic acid are more preferably used.

  The structure of the aromatic carboxylic acid is not particularly limited, but a compound represented by the following formula (2) or the following formula (3) is preferable.

［式中、Ｒ¹〜Ｒ⁵は、それぞれ独立して、１価の有機基であり、Ｒ¹〜Ｒ⁵の少なくとも一つは水酸基である。］

[Wherein, R ^{1 to} R ⁵ are each independently a monovalent organic group, and at least one of R ^{1 to} R ⁵ is a hydroxyl group. ]

［式中、Ｒ⁶〜Ｒ²⁰は、それぞれ独立して、１価の有機基であり、Ｒ⁶〜Ｒ²⁰の少なくとも一つは水酸基またはカルボキシル基である。］

[Wherein, R ^{6 to} R ²⁰ are each independently a monovalent organic group, and at least one of R ^{6 to} R ²⁰ is a hydroxyl group or a carboxyl group. ]

  Examples of such aromatic carboxylic acids include benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, hemimellitic acid, trimellitic acid, trimesic acid, merophanic acid, platonic acid, pyromellitic acid, meritic acid, and xylic acid. , Hemelic acid, mesitylene acid, prenylic acid, toluic acid, cinnamic acid, salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6 -Dihydroxybenzoic acid, 3,5-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3 , Naphthoic acid derivatives such as 5--2-dihydroxy-2-naphthoic acid, phenolphthaline, diphenolic acid, etc. The recited may be used singly or in combination of two or more of them.

  The compound having such a flux function exhibits an action of reducing the surface oxide film of the metal layer 12 and the terminals 70 and 61 and is cured so that the metal layer 12 and the terminals 70 and 61 can be electrically connected. It preferably has a function as a curing agent for curing the curable resin component, that is, a functional group capable of reacting with the curable resin component.

  Such a functional group is appropriately selected according to the type of the curable resin component. For example, when the curable resin component is an epoxy resin, a functional group capable of reacting with an epoxy group such as a carboxyl group, a hydroxyl group, and an amino group. Is mentioned. The compound having such a flux function reduces the surface oxide film formed on the metal layer 12 and the terminals 70 and 61 when the curable resin composition is melted to improve the wettability of these surfaces. It can be easily formed and the terminals 70 and 61 can be electrically connected. Further, after the electrical connection between the terminals 70 and 61 is completed by the connecting portion 87, this compound acts as a curing agent and is added to the curable resin component to increase the elastic modulus or Tg of the resin. Demonstrate. Therefore, when a compound having such a flux function is used as the flux, flux cleaning is unnecessary, and the occurrence of ion migration due to the remaining flux can be suppressed or prevented accurately.

  Examples of the compound having such a function and having a flux function include compounds having at least one carboxyl group. For example, when the curable resin component is an epoxy resin, examples thereof include aliphatic dicarboxylic acids and compounds having a carboxyl group and a phenolic hydroxyl group.

  Although it does not specifically limit as said aliphatic dicarboxylic acid, The compound which two carboxyl groups couple | bonded with the aliphatic hydrocarbon group is mentioned. The aliphatic hydrocarbon group may be saturated or unsaturated acyclic, or may be saturated or unsaturated cyclic. Further, when the aliphatic hydrocarbon group is acyclic, it may be linear or branched.

  Examples of such aliphatic dicarboxylic acids include compounds in which n is an integer of 1 to 20 in the formula (1). When n in the formula (1) is within the above range, the balance between the flux activity, the outgas at the time of adhesion, the elastic modulus after curing of the curable resin composition, and the glass transition temperature becomes good. In particular, n is preferably 3 or more from the viewpoint that it is possible to suppress an increase in the elastic modulus after curing of the curable resin composition and to improve the adhesiveness to the adherend such as the mounting substrate 5. From the viewpoint of suppressing the decrease in elastic modulus and further improving the connection reliability, n is preferably 10 or less.

  Examples of the aliphatic dicarboxylic acid represented by the formula (1) include glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid, dodecanedioic acid, tridecanedioic acid, and tetradecanedioic acid. Pentadecanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosanedioic acid and the like. Among these, adipic acid, suberic acid, sebacic acid and dodencandioic acid are preferable, and sebacic acid is more preferable.

  Further, examples of the compound having a carboxyl group and a phenolic hydroxyl group include salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), and 2,6-dihydroxy. Benzoic acid derivatives such as benzoic acid, 3,4-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2 -Naphthoic acid derivatives such as naphthoic acid, phenolphthaline, diphenolic acid and the like. Of these, phenolphthaline, gentisic acid, 2,4-dihydroxybenzoic acid, and 2,6-dihydroxybenzoic acid are preferable, and phenolphthaline and gentisic acid are more preferable.

  The compounds having the flux function as described above may be used alone or in combination of two or more.

  In addition, since any compound easily absorbs moisture and causes voids, in the present invention, it is preferably dried in advance before use.

  Content of the compound which has a flux function can be suitably set according to the form of the resin composition to be used.

  For example, when the resin composition is liquid, the content of the compound having a flux function is preferably 1% by weight or more, more preferably 2% by weight or more, and more preferably 3% by weight with respect to the total weight of the curable resin composition. The above is particularly preferable. Moreover, 50 weight% or less is preferable, 40 weight% or less is more preferable, 30 weight% or less is further more preferable, and 25 weight% or less is especially preferable.

  In the case of a solid resin composition, the content of the compound having a flux function is preferably 1% by weight or more, more preferably 2% by weight or more based on the total weight of the curable resin composition, 3% by weight or more is particularly preferable. Moreover, 50 weight% or less is preferable, 40 weight% or less is more preferable, 30 weight% or less is further more preferable, and 25 weight% or less is especially preferable.

  When the content of the compound having a flux function is within the above range, the metal layer 12 and the surface oxide films of the terminals 70 and 61 can be reliably removed so that they can be electrically joined. Furthermore, when the resin composition is a curable resin composition, it can be efficiently added to the curable resin component at the time of curing to increase the elastic modulus or Tg of the curable resin composition. Moreover, generation | occurrence | production of the ion migration resulting from the compound which has an unreacted flux function can be suppressed.

(Iv) Curing agent The curing agent is not particularly limited, and examples thereof include phenols, amines, and thiols. Such a hardening | curing agent can be suitably selected according to the kind etc. of curable resin component. For example, when an epoxy resin is used as the curable resin component, good reactivity with the epoxy resin, low dimensional change during curing, and appropriate physical properties after curing (eg heat resistance, moisture resistance, etc.) are obtained. In view of the above, it is preferable to use a phenol as a curing agent, and a bifunctional or higher functional phenol is more preferably used in terms of excellent physical properties after curing of the curable resin component. In addition, such a hardening | curing agent may be used individually by 1 type, and may be used in combination of 2 or more type.

  Examples of phenols include bisphenol A, tetramethylbisphenol A, diallyl bisphenol A, biphenol, bisphenol F, diallyl bisphenol F, trisphenol, tetrakisphenol, phenol novolac resin, cresol novolac resin, etc. Species or a combination of two or more can be used. Among these, a phenol novolac resin and a cresol novolac resin are preferable from the viewpoints of good melt viscosity, reactivity with an epoxy resin, and excellent physical properties after curing.

  In addition, in the curable resin composition, the amount of the curing agent described above is such that the type of the curable resin component and the curing agent to be used, and the compound having a flux function have a functional group that functions as a curing agent. It is set as appropriate depending on the type of group and the amount used.

  For example, when an epoxy resin is used as the curable resin, the content of the curing agent is preferably about 0.1 to 50% by weight with respect to the total weight of the curable resin composition, 0.2 to 40 It is more preferably about wt%, and further preferably about 0.5 to 30 wt%. When the content of the curing agent is within the above range, the electrical connection strength and the mechanical adhesive strength of the connection portion 87 formed between the terminals 70 and 61 can be sufficiently secured.

(V) Curing accelerator As described above, a curing accelerator can be further added to the curable resin composition. Thereby, a curable resin composition can be hardened reliably and easily.

  Although it does not specifically limit as a hardening accelerator, For example, imidazole, 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2- Phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-ethyl-4-methyl Imidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2, 4 Diamino-6- [2′-methylimidazolyl (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- [2′-undecylimidazolyl (1 ′)]-ethyl-s-triazine, 2 , 4-Diamino-6- [2'-ethyl-4-methylimidazolyl (1 ')]-ethyl-s-triazine, 2,4-diamino-6- [2'-methylimidazolyl (1')]-ethyl -Isocyanuric acid adduct of s-triazine, isocyanuric acid adduct of 2-phenylimidazole, isocyanuric acid adduct of 2-methylimidazole, 2-phenyl-4,5-dihydroxydimethylimidazole, 2-phenyl-4-methyl- Examples include imidazole compounds such as 5-hydroxymethylimidazole, and one or more of these may be used in combination. Kill.

  Moreover, in the curable resin composition, the blending amount of the above-described curing accelerator can be appropriately set according to the type of the curing accelerator to be used.

  For example, when an imidazole compound is used, the amount of the imidazole compound is preferably 0.001% by weight or more, more preferably 0.003% by weight or more in the curable resin composition, More preferably, it is 0.005% by weight or more. Further, it is preferably 1.0% by weight or less, more preferably 0.7% by weight or less, and further preferably 0.5% by weight or less. When the blending amount of the imidazole compound is less than the lower limit, depending on the type of the curing accelerator to be used, the effect as the curing accelerator may not be sufficiently exhibited, and the curable resin composition may not be sufficiently cured. . Moreover, when the compounding amount of the imidazole compound exceeds the above upper limit, the molten metal layer 12 cannot sufficiently move to the surfaces of the terminals 70 and 61 before the curing of the curable resin composition is completed, and the insulating layer is formed. There is a possibility that a part of the metal layer 12 remains in the sealing layer 88 to be formed, and the insulation in the sealing layer 88 cannot be sufficiently secured.

(Vi) Silane Coupling Agent As described above, a silane coupling agent can be further added to the curable resin composition.

  Although it does not specifically limit as a silane coupling agent, For example, an epoxy silane coupling agent, an aromatic containing aminosilane coupling agent, etc. are mentioned. By adding such a silane coupling agent, the adhesion between the bonding member (adhered body) such as the mounting substrate 5 and the curable resin composition can be enhanced.

  In addition, such a silane coupling agent may be used individually by 1 type, and can also be used in combination of 2 or more type.

  Moreover, in the curable resin composition, the blending amount of the silane coupling agent described above is appropriately set according to the types of the joining member, the curable resin component, and the like. For example, in the curable resin composition, it is preferably 0.01% by weight or more, more preferably 0.05% by weight or more, and further preferably 0.1% by weight or more. Further, it is preferably 2% by weight or less, more preferably 1.5% by weight or less, and further preferably 1% by weight or less.

  In addition to the components described above, the curable resin composition further contains a plasticizer, a stabilizer, a tackifier, a lubricant, an antioxidant, a filler, an antistatic agent, a pigment, and the like. Also good.

  Moreover, the curable resin composition as described above can be prepared by mixing and dispersing the above components. The mixing method and dispersion method of each component are not specifically limited, It can mix and disperse | distribute by a conventionally well-known method.

  Moreover, you may prepare the liquid curable resin composition by mixing each said component in a solvent or under absence of solvent. The solvent used at this time is not particularly limited as long as it is inert to each component. For example, acetone, methyl ethyl ketone (MEK), methyl isobutyl ketone (MIBK), diisobutyl ketone (DIBK), cyclohexanone, Ketones such as diacetone alcohol (DAA), aromatic hydrocarbons such as benzene, xylene and toluene, alcohols such as methyl alcohol, ethyl alcohol, isopropyl alcohol and n-butyl alcohol, methyl cellosolve, ethyl cellosolve, butyl cellosolve, Cellosolves such as methyl cellosolve acetate and ethyl cellosolve acetate, N-methyl-2-pyrrolidone (NMP), tetrahydrofuran (THF), dimethylformamide (DMF), dibasic acid ester (DBE), 3 Ethyl ethoxypropionate (EEP), dimethyl carbonate (DMC) and the like, can be used singly or in combination of two or more of them. Moreover, it is preferable that the usage-amount of a solvent is an quantity from which the solid content concentration of the component mixed with the solvent will be 10 to 60 weight%.

(B) Thermoplastic resin composition The thermoplastic resin composition contains a thermoplastic resin component and softens at a predetermined temperature.

  In addition to the thermoplastic resin component, the thermoplastic resin composition may contain a compound having a flux function, a film-forming resin, a silane coupling agent, and the like, if necessary.

(I) Thermoplastic resin component The thermoplastic resin component is not particularly limited. For example, vinyl acetate, polyvinyl alcohol resin, polyvinyl butyral resin, vinyl chloride resin, (meth) acrylic resin, phenoxy resin, polyester resin, polyimide Resin, polyamideimide resin, siloxane-modified polyimide resin, polybutadiene resin, acrylic resin, styrene resin, polyethylene resin, polypropylene resin, polyamide resin, cellulose resin, isobutylene resin, vinyl ether resin, liquid crystal polymer resin, polyphenylene sulfide resin, polyphenylene ether resin, Polyethersulfone resin, polyetherimide resin, polyetheretherketone resin, polyurethane resin, styrene-butadiene-styrene copolymer, styrene- Tylene-butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer And polyvinyl acetate. These thermoplastic resin components may be a single polymer, or may be a copolymer of at least two of these thermoplastic resin components.

  The softening point of the thermoplastic resin component is not particularly limited, but is preferably 10 ° C. or more lower than the melting point of the metal layer 12 constituting the conductive connection sheet 1, more preferably 20 ° C. or more, and more preferably 30 ° C. or less. Further preferred.

  Further, the decomposition temperature of the thermoplastic resin component is not particularly limited, but is preferably higher by 10 ° C. or higher than the melting point of the metal layer 12, more preferably higher by 20 ° C., and further preferably higher by 30 ° C. or higher.

  In the thermoplastic resin composition, the amount of the thermoplastic resin component described above is appropriately set according to the form of the thermoplastic resin composition to be used.

  For example, in the case of a liquid thermoplastic resin composition, the blending amount of the thermoplastic resin component is preferably 10% by weight or more, more preferably 15% by weight or more in the thermoplastic resin composition. It is preferably 20% by weight or more, more preferably 25% by weight or more, still more preferably 30% by weight or more, and particularly preferably 35% by weight or more. Further, it is preferably 100% by weight or less, more preferably 95% by weight or less, still more preferably 90% by weight or less, still more preferably 75% by weight or less, and 65% by weight or less. Is still more preferable, and it is especially preferable that it is 55 weight% or less.

  In the case of a solid thermoplastic resin composition, the amount of the thermoplastic resin component is preferably 5% by weight or more, and preferably 10% by weight or more in the thermoplastic resin composition. More preferably, it is more preferably 15% by weight or more, and particularly preferably 20% by weight or more. Further, it is preferably 90% by weight or less, more preferably 85% by weight or less, still more preferably 80% by weight or less, still more preferably 75% by weight or less, and 65% by weight or less. It is still more preferable that it is 55% by weight or less.

  When the blending amount of the thermoplastic resin component in the thermoplastic resin composition is within the above range, the electrical connection strength and the mechanical adhesive strength between the terminals 70 and 61 can be sufficiently ensured.

(Ii) Other additives In addition to thermoplastic resin components, compounds having a flux function, film-forming resins, silane coupling agents, plasticizers, stabilizers, tackifiers, lubricants, antioxidants, filling An agent, an antistatic agent, a pigment, and the like may be blended, but these can be the same as those described in the above-mentioned “(a) curable resin composition”. Further, the same applies to preferred compounds and their blending amounts.

  In addition, in this invention, it is preferable to use a curable resin composition as a resin composition among what was mentioned above. Among them, the epoxy resin is 10 to 90% by weight, the curing agent is 0.1 to 50% by weight, the film-forming resin is 5 to 50% by weight, and the compound having a flux function is 1 to 50% by weight based on the total weight of the resin composition More preferably, it contains The epoxy resin is 20 to 80% by weight, the curing agent is 0.2 to 40% by weight, the film-forming resin is 10 to 45% by weight, and the compound having a flux function is 2 to 40% by weight with respect to the total weight of the resin composition. More preferably, those containing The epoxy resin is 35 to 55% by weight, the curing agent is 0.5 to 30% by weight, the film-forming resin is 15 to 40% by weight, and the compound having a flux function is 3 to 25% by weight with respect to the total weight of the resin composition. Those containing are particularly preferred. Thereby, it is possible to sufficiently ensure the electrical connection strength and the mechanical adhesive strength between the terminals 70 and 61.

  Moreover, the thickness of the resin composition layer 11 in the conductive connection sheet 1 is not particularly limited, but is preferably 1 μm or more, more preferably 3 μm or more, and further preferably 5 μm or more. The thickness of the resin composition layer 11 is preferably 200 μm or less, more preferably 150 μm or less, and further preferably 100 μm or less. When the thickness of the resin composition layer 11 is in the above range, the gap between the adjacent terminals 70 and 61 can be sufficiently filled with the resin composition to form the sealing layer 88, and the resin composition can be cured. The mechanical adhesion strength after or after solidification and the electrical connection between the opposing terminals 70 and 61 can be sufficiently secured, and the connection portion 87 can be formed.

  The resin composition layers 11 and 13 having the above-described configuration are formed in the conductive connection sheet 1 in the connection method between terminals according to the present invention and the connection terminal formation method according to the present invention described later, respectively. And it becomes a constituent material constituting the reinforcing layer 86.

<< metal layer 12 >>
The metal layer 12 is a layer composed of a metal foil composed of a low melting point metal material.

  When the metal layer (metal foil layer) 12 is heated to a melting point or higher, it melts, and when the resin composition layers 11 and 13 contain a compound having a flux function, they are included in the resin composition layers 11 and 13. Since the oxide film formed on the surface of the metal layer 12 is reduced by the action of the compound having a flux function, the wettability of the molten metal layer 12 is improved. Therefore, the metal layer 12 selectively aggregates between the terminals 70 and 61, and finally, the connection portion 87 is formed by the solidified material.

  Here, in the present invention, a low melting point metal material having a melting point of 330 ° C. or lower, preferably 300 ° C. or lower, more preferably 280 ° C. or lower, further preferably 260 ° C. or lower is appropriately selected. Thereby, in the connection between the terminals 70 and 61 in the semiconductor device 10, it is possible to accurately suppress or prevent the various members of the semiconductor device 10 from being damaged by the thermal history.

  Furthermore, from the viewpoint of ensuring the heat resistance of the semiconductor device 10 after the connection portion 87 is formed, that is, after the connection between the terminals 70 and 61, the low melting point metal material has a melting point of 100 ° C. or higher, preferably 110 ° C. As described above, a material having a temperature of 120 ° C. or higher is appropriately selected.

  Note that the melting point of the low melting point metal material, that is, the metal layer 12, can be measured by a differential scanning calorimeter (DSC).

  Such a low-melting-point metal material has the above-described melting point, and further, as long as the oxide film formed on the surface of the metal layer 12 can be removed by the reducing action of the compound having a flux function. For example, tin (Sn), lead (Pb), silver (Ag), bismuth (Bi), indium (In), zinc (Zn), nickel (Ni), antimony (Sb), iron (Fe) , An alloy of at least two kinds of metals selected from the group consisting of aluminum (Al), gold (Au), germanium (Ge) and copper (Cu), or a simple substance of tin.

  Among these alloys, as a low melting point metal material, considering its melting temperature, mechanical properties, etc., an Sn—Pb alloy, an Sn—Bi alloy that is a lead-free solder, an Sn—Ag—Cu alloy It is preferably composed of an alloy containing Sn, such as an alloy, an Sn—In alloy, or an Sn—Ag alloy.

  When an Sn—Pb alloy is used as the low melting point metal material, the tin content is preferably 30% by weight or more and less than 100% by weight, and preferably 35% by weight or more and less than 100% by weight. More preferably, it is more preferably 40% by weight or more and less than 100% by weight. When lead-free solder is used, the content of tin is preferably 15% by weight or more and less than 100% by weight, more preferably 20% by weight or more and less than 100% by weight, and more preferably 25% by weight or more and 100% by weight. More preferably, it is less than% by weight.

  Specifically, for example, Sn-37Pb (melting point 183 ° C.) is used as an Sn—Pb alloy, and Sn-3.0Ag-0.5Cu (melting point 217 ° C.), Sn-3.5Ag is used as a lead-free solder. (Melting point 221 ° C), Sn-58Bi (melting point 139 ° C), Sn-9.0Zn (melting point 199 ° C), Sn-3.5Ag-0.5Bi-3.0In (melting point 193 ° C), Au-20Sn (melting point) 280 ° C.).

  Further, in the conductive connection sheet 1, the amount of the low melting point metal material described above, that is, the occupation amount of the metal layer 12 is preferably 5% by weight or more in the conductive connection sheet 1, and is 20% by weight or more. More preferably, it is more preferably 30% by weight or more. Moreover, it is preferable that it is less than 100 weight%, It is more preferable that it is 80 weight% or less, It is further more preferable that it is 70 weight% or less.

  If the blending amount of the metal material in the conductive connection sheet 1, that is, the occupation amount of the metal layer 12 is less than the lower limit, there is a possibility that unconnected terminals 70 and 61 are generated due to a shortage of the metal material constituting the metal layer 12. If the upper limit is exceeded, a surplus of the metal material may cause bridging by the connecting portion 87 between the adjacent terminals 70 and 61, which may cause a short circuit.

  Alternatively, the occupation amount of the metal layer 12 may be defined by a volume ratio with respect to the conductive connection sheet 1. For example, the occupation amount (blending amount) of the metal layer 12 is preferably 1% by volume or more, more preferably 5% by volume or more, and more preferably 10% by volume or more with respect to the conductive connection sheet 1. Further preferred. Moreover, it is preferable that it is 90 volume% or less, It is more preferable that it is 80 volume% or less, It is further more preferable that it is 70 volume% or less. If the occupied amount of the metal layer 12 is less than the lower limit, there is a possibility that unconnected terminals 70 and 61 are generated due to a shortage of the metal material constituting the metal layer 12, and if the upper limit is exceeded, the metal layer 12 is adjacent due to surplus of the metal material. There is a risk that a short circuit may occur due to a bridge caused by the connecting portion 87 between the terminals 70 and 61.

  In the conductive connection sheet 1, the metal layer 12 having the above-described configuration is formed with the connection portion 87 and the connection terminal 85 formed in the connection method between the terminals of the present invention and the connection terminal formation method of the present invention described later, respectively. It becomes a constituent material to constitute.

  The conductive connection sheet 1 configured as described above includes the first portion 15 to be disposed between the semiconductor device 10 and the mounting substrate 5 when the semiconductor device 10 and the mounting substrate 5 are electrically connected. In the present embodiment, the thickness of the metal layer 12 corresponding to the first portion 15 is equal to the metal layer 12 corresponding to the second portion 16. Although the thickness is thicker than the thickness of the above, the explanation on this point will be given later.

  The thickness of the conductive connection sheet 1 is not particularly limited, but is preferably 1 μm or more, more preferably 3 μm or more, further preferably 5 μm or more, and preferably 200 μm or less. 150 μm or less is more preferable, and 100 μm or less is further preferable. When the thickness of the conductive connection sheet 1 is within the above range, the gap between the adjacent terminals 70 and 61 can be sufficiently filled with the sealing layer 88 made of the resin composition. In addition, the mechanical adhesive strength after the resin component is cured or solidified and the electrical connection between the opposing terminals can be sufficiently ensured. In addition, it is possible to manufacture a connection terminal according to the purpose and application.

  In the present embodiment, when an oxide film is formed on the metal layer 12 and the terminals 70 and 61, the first resin composition layer 11 and the second resin are used for the purpose of removing the oxide film. Although it has been described that the resin composition constituting the composition layer 13 may contain a compound having a flux function, the resin composition contains an antioxidant instead of the compound having a flux function. It may be.

<Method for producing conductive connection sheet 1>
Next, the conductive connection sheet 1 having the above-described configuration can be manufactured by, for example, the following manufacturing method.

  The method for producing a conductive connection sheet of the present embodiment obtains a conductive connection sheet forming sheet including the second resin composition layer 13 and the metal layer 12 formed on the second resin composition layer 13. A first step and a second step of forming the first resin composition layer 11 on the metal layer 12.

Hereinafter, each step will be described.
[1] First Step First, a second resin composition is formed on a release substrate such as a sheet of polyester resin, fluororesin, silicone resin or the like, or a substrate whose surface is release-treated with fluororesin or silicone resin. The physical layer 13 is formed.

  The formation of the second resin composition layer 13 on the release substrate is performed, for example, as follows.

(I) When the resin composition forms a liquid at 25 ° C. When the resin composition constituting the second resin composition layer 13 forms a liquid at 25 ° C., the resin composition forms a liquid on the release substrate. After the liquid resin composition is attached to the resin composition, the second resin composition layer 13 is formed by semi-curing the resin composition at a predetermined temperature.

  In addition, when the thickness of the second resin composition layer 13 to be formed needs to be controlled, the peeling substrate supplied with the liquid resin composition is passed through a bar coater having a certain gap, By spraying the liquid resin composition onto the peeling substrate with a spray coater or the like, the second resin composition layer 13 having a target thickness can be easily manufactured.

  When using a rolled release substrate, the liquid resin composition is directly applied onto the release substrate, and then the resin composition is wound up while being semi-cured, whereby the second resin A wound release substrate provided with the composition layer 13 can be obtained.

(Ii) When the resin composition is solid at 25 ° C. When the resin composition constituting the second resin composition layer 13 is solid at 25 ° C., first, the resin composition is dissolved in an organic solvent. And get the varnish. And after supplying (application | coating) and attaching this varnish on a peeling base material, the 2nd resin composition layer 13 is formed by making it dry at predetermined temperature.

  When the thickness of the second resin composition layer 13 to be formed needs to be controlled, the peeling substrate supplied with the varnish is passed through a bar coater having a certain gap, or the varnish is spray coated. The second resin composition layer 13 having a target thickness can be easily manufactured by spraying on the peeling substrate.

  When using a wound release substrate, the second resin composition layer 13 is provided by directly applying the varnish on the release substrate and then winding the varnish while drying it. A rolled-up release substrate can be obtained.

  Next, various film forming methods (vapor phase film forming method) such as vapor deposition, sputtering, plating, etc. are formed on almost the entire surface of the second resin composition layer 13 formed on the peeling substrate opposite to the peeling substrate. And the liquid phase film forming method), the metal layer is formed until the thickness of the metal layer 12 corresponding to the second portion 16 is reached. Next, using a mask having an opening in a region corresponding to the first portion 15, the metal layer located in the region is made to correspond to the first portion 15 by various film forming methods such as vapor deposition, sputtering, and plating. By forming the metal layer 12 until the thickness of the metal layer 12 is increased, the metal layer 12 whose thickness is thicker in the first portion 15 than in the second portion 16 can be obtained.

[2] Second Step Next, the first resin composition layer 11 is formed on the metal layer 12.

  For example, when the first resin composition layer 11 is formed directly on the metal layer 12, the first resin composition layer 11 is formed on the metal layer 12 in the step [1]. A method similar to that described in the case of forming the second resin composition layer 13 thereon can be used.

  In addition, when the first resin composition layer 11 is formed on the release substrate in the same manner as the second resin composition layer 13 is formed on the release substrate in the step [1], In a state where the metal layer 12 and the first resin composition layer 11 face each other, they are laminated with a heat roll, and the first resin composition layer 11 is pressure-bonded to the metal layer 12 so that the metal layer 12 is placed on the metal layer 12. The first resin composition layer 11 can be formed.

  Prior to this step [2], the metal layer 12 is embossed for the purpose of improving the surface roughness in order to improve the adhesion to the first resin composition layer 11. It may be.

Through the steps as described above, the conductive connection sheet 1 can be obtained.
Such a conductive connection sheet 1 is used for electrical connection between the mounting substrate 5 and the semiconductor device (electronic component). Hereinafter, the semiconductor device 10 is mounted on the mounting region 65 of the mounting substrate 5 and mounted. A case where the substrate 5 and the semiconductor device 10 are electrically connected will be described.

  Here, for the electrical connection between the mounting substrate 5 and the semiconductor device 10, a connecting portion 87 is formed between the terminal 61 included in the mounting substrate 5 and the terminal 70 included in the semiconductor device 10 using the conductive connection sheet 1. Further, the sealing layer 88 is formed so as to surround the connection portion 87 and the adjacent connection portions 87 are insulated. However, the formation of the connection portion 87 and the sealing layer 88 is not limited to this. The connection method between the terminals of the invention or the method of forming the connection terminal of the invention is applied.

<Connection method between terminals of the present invention>
In the following, first, by applying the connection method between terminals of the present invention, in the mounting region 65, the connection portion 87 and the sealing layer 88 are formed between the mounting substrate 5 and the semiconductor device 10. Will be described in detail.

  FIG. 4 is a longitudinal sectional view for explaining a method of forming a connection portion and a sealing layer between a mounting substrate and a semiconductor device using the connection method between terminals of the present invention. In the following description, the upper side in FIG. 4 is referred to as “upper” and the lower side is referred to as “lower”.

  In the method for forming the connection portion 87 and the sealing layer 88 described below, an arrangement step of disposing the conductive connection sheet 1 between the terminal 70 included in the semiconductor device 10 and the terminal 61 provided on the mounting substrate 5; It has the heating process which heats the electrically conductive connection sheet 1 more than melting | fusing point of a metal material, and the hardening (solidification) process which hardens or solidifies the said resin composition.

  In addition, when forming the connection part 87 and the sealing layer 88, when the resin composition layers 11 and 13 with which the electroconductive connection sheet 1 is provided are comprised with a curable resin composition, it is comprised with a thermoplastic resin composition. In some cases, the formation method is slightly different. Therefore, in the following, the case where the resin composition layers 11 and 13 are made of a curable resin composition is referred to as a first embodiment, and the case where the resin composition layers 11 and 13 are made of a thermoplastic resin composition is referred to as a second embodiment for each embodiment. explain.

<< First Embodiment >>
In the first embodiment in which the resin composition layers 11 and 13 provided in the conductive connection sheet 1 are formed of a curable resin composition, the conductive composition is provided between the terminal 70 included in the semiconductor device 10 and the terminal 61 included in the mounting substrate 5. Conductive connection sheet 1 at an arrangement step of arranging connection sheet 1 and at a temperature not lower than the melting point of metal layer 12 (metal material) and at which curing of curable resin composition constituting resin composition layers 11 and 13 is not completed. And a curing step for completing the curing of the curable resin composition.

Hereinafter, each process is explained in full detail.
[1] Arrangement Step First, the semiconductor device 10 and the mounting substrate 5 are prepared.

  Next, the conductive connection sheet 1 is placed on the surface of the mounting substrate 5 on the terminal 61 side. At this time, it arrange | positions so that the 1st part 15 in which the thickness of the metal layer 12 is thicker than the 2nd part may correspond to the mounting area | region 65 which should mount the semiconductor device 10. FIG.

  In this state, the conductive connection sheet 1 is thermocompression bonded to the surface of the mounting substrate 5 on the terminal 61 side using a device such as a roll laminator or a press. Thereby, since the first resin composition layer 11 is in a molten state, the terminals 61 protruding from the mounting substrate 5 are embedded in the first resin composition layer 11.

  Furthermore, with this state maintained, the mounting substrate is mounted so that the semiconductor device 10 is mounted on the mounting region 65 of the mounting substrate 5, in other words, the terminals 70 and the terminals 61 included in these devices face each other. The semiconductor device 10 is aligned with 5 (see FIG. 4A).

  Thus, the conductive connection sheet 1 is disposed between the semiconductor device 10 and the mounting substrate 5 with the terminals 70 and 61 facing each other, and the first portion 15 is mounted in the mounting region 65. The second portion 16 is located in an area other than the area 65.

  As shown in FIG. 4A, the conductive connection sheet 1 is not limited to being thermocompression bonded to the terminal 61 side of the mounting substrate 5, and may be thermocompression bonded to the terminal 70 side of the semiconductor device 10. However, it may be thermocompression bonded to both of them.

[2] Heating Step Next, the conductive connection sheet 1 arranged between the semiconductor device 10 and the mounting substrate 5 provided with the terminals 61 in the arrangement step [1] is shown in FIG. As described above, heating is performed at a temperature equal to or higher than the melting point of the metal layer 12.

  The heating temperature may be equal to or higher than the melting point of the metal layer 12. For example, the range in which the metal material can move in the curable resin composition by adjusting the heating time such as shortening the heating time, that is, “curable resin”. The upper limit is not particularly limited as long as it is in the range where the curing of the composition is not completed.

  Specifically, the heating temperature is preferably 5 ° C. or more higher than the melting point of the metal layer 12, more preferably 10 ° C. or more, and even more preferably 20 ° C. or more. It is particularly preferable that the temperature be 30 ° C. or higher.

  Specifically, the heating temperature is appropriately set depending on the composition of the metal layer 12 and the curable resin composition to be used, but is preferably 100 ° C. or higher, more preferably 130 ° C. or higher, and 140 More preferably, it is 150 degreeC or more, and it is most preferable that it is 150 degreeC or more. The heating temperature is preferably 260 ° C. or lower, more preferably 250 ° C. or lower, and 240 ° C. or lower from the viewpoint of preventing thermal deterioration of the semiconductor device 10 and the mounting substrate 5 to be connected. More preferably it is.

  When the conductive connection sheet 1 is heated at such a temperature, the metal layer 12 is melted, and the molten metal layer 12, that is, the low melting point metal material can move in the resin composition layers 11 and 13.

  At this time, when a compound having a flux function is included in the curable resin composition, even if an oxide film is formed on the surface of the metal layer 12 due to the reducing action of the compound having the flux function, It is removed by being reduced. Therefore, the molten metal material is in a state in which the wettability is enhanced and the metal bonding is promoted, so that the molten metal material is easily aggregated between the terminals 70 and 61 arranged to face each other.

  Further, even if an oxide film is formed on the surfaces of the terminals 70 and 61, this oxide film is also removed by the reducing action of the compound having a flux function, and its wettability is enhanced. As a result, metal bonding with the metal material is promoted, and from this point of view, the molten metal material is easily aggregated between the terminals 70 and 61 arranged to face each other.

  In the present invention, since the metal layer 12 has a layer shape (foil shape), when the molten metal layer 12 is divided into a plurality of pieces and aggregates on the surfaces of the terminals 70 and 61, a part of the metal layer 12 is formed. It is possible to accurately suppress or prevent the resin composition layers 11 and 13 from remaining in the terminal 61 without aggregating. Therefore, it is possible to reliably prevent the occurrence of a leakage current due to a part of the metal layer 12 remaining in the sealing layer 88.

  From the above, the molten metal material moves through the curable resin component and selectively aggregates between the terminals 70 and 61.

  At this time, in the present embodiment, as described in the step [1], the metal layer 12 is thicker than the second portion in the mounting region 65 where the semiconductor device 10 is to be mounted. The conductive connection sheet 1 is arranged so that the portions 15 correspond to each other. That is, the conductive connection sheet is provided on the mounting substrate 5 so that the first portion corresponds to the region corresponding to the space between the mounting substrate 5 and the semiconductor device 10 and the second portion corresponds to the other region. 1 is arranged.

  Therefore, in the mounting region 65 corresponding to the space between the mounting substrate 5 and the semiconductor device 10, the amount of the metal material constituting the metal layer 12 increases, and in the other regions, the metal material constituting the metal layer 12. The amount of.

  In other words, the metal material is selectively agglomerated between the terminals 70 and 61 and the amount of the metal material is increased in the mounting region 65 where the metal materials are to be electrically joined to each other. The amount of the metal material is reduced in the region (the region other than the mounting region 65) where the insulating property should be maintained by filling the region.

  Therefore, a sufficient amount of metal material can be supplied to the mounting area 65, and unnecessary metal material can be accurately prevented or suppressed from being supplied to other areas. It can be made to aggregate between terminals 70 and 61 with property. As the amount of the aggregated metal material increases, the terminal 70 and the terminal 61 are finally connected via the aggregated metal material.

  From the above, as shown in FIG. 4C, a connection part 87 made of a metal material is formed between the terminals 70 and 61, and the terminal 70 and the terminal 61 are electrically connected via the connection part 87. Connected. At this time, the sealing layer 88 is formed by filling the curable resin composition around the connection portion 87 without mixing the metal material. As a result, insulation between the adjacent terminals 70 and 61 is ensured, so that a short circuit between the adjacent terminals 70 and 61 is prevented.

  Further, the thickness of the metal layer 12 in the first portion is not particularly limited, and is appropriately set according to the gap between the terminals 70 and 61 facing each other, the separation distance between the adjacent terminals 70 and 61, and the like. However, as in this embodiment, in the connection between the terminals 70 and 61 in the semiconductor device 10 and the mounting substrate 5 on which the semiconductor device 10 is mounted, the thickness of the metal layer 12 is preferably 0.5 μm or more. It is more preferably 3 μm or more, further preferably 5 μm or more, more preferably 200 μm or less, more preferably 150 μm or less, and further preferably 100 μm or less. If the thickness of the metal layer 12 is less than the lower limit, unconnected terminals 70 and 61 may be generated due to a shortage of the metal material constituting the metal layer 12, and if the upper limit is exceeded, adjacent terminals due to surplus metal material. 70 and 61 may cause a bridge by the connecting portion 87, which may cause a short circuit.

  Furthermore, when the thickness of the metal layer 12 in the first portion is A [μm] and the thickness of the metal layer 12 in the second portion is B [μm], the ratio of these thicknesses, B / A is preferably 0.5 or less, and more preferably 0.2 or less. Thereby, it is possible to accurately suppress or prevent the metal material from remaining in the sealing layer 88 while reliably forming the connection portion 87 between the terminals 70 and 61.

  In the method of forming the connection portion 87 and the sealing layer 88 using the conductive connection sheet 1 as described above, the connection portion 87 is formed by selectively aggregating the heated and melted metal material between the terminals 70 and 61, A sealing layer 88 composed of a curable resin composition can be formed around the periphery. As a result, the insulation between the adjacent terminals 70 and 61 can be secured and the occurrence of leakage current can be reliably prevented, so that the connection reliability of the connection via the connection portion 87 between the terminals 70 and 61 is improved. Can do.

  In addition, even in a fine wiring circuit, electrical connection between a large number of terminals 70 and 61 can be performed collectively. Furthermore, in the next step [3], the mechanical strength of the connecting portion 87 and the sealing layer 88 can be increased by curing the curable resin composition.

  In this step [2], the semiconductor device 10 and the mounting substrate 5 may be heated in a pressurized state so that the distance between the opposing terminals 70 and 61 is reduced. For example, the distance between the terminals 70 and 61 facing each other is increased by heating and pressurizing the semiconductor device 10 and the mounting substrate 5 in FIG. Since it can be controlled to be constant, it is possible to improve the electrical connection reliability by the connecting portion 87 between the opposing terminals 70 and 61.

  Furthermore, when applying pressure or heating, an ultrasonic wave or an electric field may be applied, or special heating such as laser or electromagnetic induction may be applied.

[3] Curing Step Next, in the heating step [2], after forming the connection portion 87 and the sealing layer 88, the sealing layer 88 is fixed by curing the curable resin composition.

  Thereby, both the electrical reliability by the connection part 87 between the terminals 70 and 61 and the mechanical reliability by the sealing layer 88 are fully securable.

  In particular, in this embodiment, since the curable resin composition having a high insulation resistance value at the time of high melt viscosity is used, the insulation of the sealing layer (insulating region) 88 can be more reliably ensured.

  Curing of the curable resin composition can be carried out by heating the curable resin composition. The curing temperature of the curable resin composition can be appropriately set according to the composition of the curable resin composition. Specifically, the temperature is preferably at least 5 ° C. lower than the heating temperature in the heating step [2], and more preferably at least 10 ° C. lower. More specifically, it is preferably 100 ° C. or higher, more preferably 120 ° C. or higher, further preferably 130 ° C. or higher, and most preferably 150 ° C. or higher. Moreover, it is preferable that it is 300 degrees C or less, It is more preferable that it is 260 degrees C or less, It is more preferable that it is 250 degrees C or less, It is most preferable that it is 240 degrees C or less. When the curing temperature is within the above range, the curable resin composition can be sufficiently cured while reliably preventing the conductive connection sheet 1 from being thermally decomposed.

  Through the steps described above, the connection portion 87 and the sealing layer 88 are formed between the semiconductor device 10 and the mounting substrate 5 in the mounting region 65, so that the semiconductor device 10 and the mounting substrate 5 are electrically connected. Connected.

<< Second Embodiment >>
In the second embodiment in which the resin composition layers 11 and 13 included in the conductive connection sheet 1 are formed of a thermoplastic resin composition, the disposing step of disposing the conductive connection sheet 1 between the semiconductor device 10 and the mounting substrate 5. A heating step of heating the conductive connection sheet 1 at a temperature that is equal to or higher than the melting point of the metal layer 12 and softens the thermoplastic resin composition constituting the resin composition layers 11 and 13, and solidifies the thermoplastic resin composition. And a solidifying step.

Hereinafter, each process is explained in full detail.
[1] Arrangement Step The first embodiment in which the resin composition layers 11 and 13 are made of a thermosetting resin composition also in the present embodiment in which the resin composition layers 11 and 13 are made of a thermoplastic resin composition. When the semiconductor device 10 is mounted corresponding to the mounting region 65 surrounded by the terminals 61 so that the terminals 70 and 61 are opposed to each other in the same manner as the embodiment, Between the mounting substrate 5, the conductive connection sheet 1 is arranged so that the first portion 15 corresponds to the mounting region 65.

[2] Heating Step Next, the conductive connection sheet 1 arranged between the semiconductor device 10 and the mounting substrate 5 provided with the terminals 61 in the arrangement step [1] is shown in FIG. Thus, heating is performed at a temperature equal to or higher than the melting point of the metal layer 12.

  The heating temperature is preferably 5 ° C or higher than the melting point of the metal layer 12, more preferably 10 ° C or higher, more preferably 20 ° C or higher, and more preferably 30 ° C or higher. Is particularly preferred.

  Specifically, the heating temperature is appropriately set depending on the composition of the metal layer 12 and the thermoplastic resin composition to be used, and for example, the same as described in the heating step [2] of the first embodiment described above. Is set in the temperature range.

  When the conductive connection sheet 1 is heated at such a temperature, the metal layer 12 is melted, and the molten metal layer 12, that is, the low melting point metal material can move in the resin composition layers 11 and 13.

  At this time, when a compound having a flux function is included in the thermoplastic resin composition, even if an oxide film is formed on the surface of the metal layer 12 due to the reducing action of the compound having the flux function, It is reduced and surely removed. Therefore, the molten metal material is in a state in which the wettability is enhanced and the metal bonding is promoted, so that the molten metal material is easily aggregated between the terminals 70 and 61 arranged to face each other.

  Further, even if an oxide film is formed on the surfaces of the terminals 70 and 61, the oxide film is also removed by the reducing action of the compound having the flux function, so that the wettability is reliably increased. Yes. As a result, metal bonding with the metal material is promoted, and from this point of view, the molten metal material is easily aggregated between the terminals 70 and 61 arranged to face each other.

  In the present invention, since the metal layer 12 has a layer shape (foil shape), when the molten metal layer 12 is divided into a plurality of pieces and aggregates on the surface of the terminal 61, a part of the metal layer 12 is a terminal 61. It can be accurately suppressed or prevented from remaining in the resin composition layers 11 and 13 without agglomerating. Therefore, it is possible to reliably prevent the occurrence of a leakage current due to a part of the metal layer 12 remaining in the sealing layer 88.

  From the above, the molten metal material moves through the thermoplastic resin component and selectively aggregates between the terminals 70 and 61.

  At this time, in the present embodiment, the conductive connection sheet is such that the first portion 15 in which the thickness of the metal layer 12 is thicker than the second portion corresponds to the mounting region 65 where the semiconductor device 10 is to be mounted. 1 is arranged. That is, the conductive connection sheet is provided on the mounting substrate 5 so that the first portion corresponds to the region corresponding to the space between the mounting substrate 5 and the semiconductor device 10 and the second portion corresponds to the other region. 1 is arranged.

  Therefore, in the mounting region 65 corresponding to the space between the mounting substrate 5 and the semiconductor device 10, the amount of the metal material constituting the metal layer 12 increases, and in the other regions, the metal material constituting the metal layer 12. The amount of.

  In other words, the metal material is selectively agglomerated between the terminals 70 and 61 and the amount of the metal material is increased in the mounting region 65 where the metal materials are to be electrically joined to each other. The amount of the metal material is reduced in the region (the region other than the mounting region 65) where the insulating property should be maintained by filling the region.

  Therefore, a sufficient amount of metal material can be supplied to the mounting area 65, and unnecessary metal material can be accurately prevented or suppressed from being supplied to other areas. It can be made to aggregate between terminals 70 and 61 with property. As the amount of the aggregated metal material increases, the terminal 70 and the terminal 61 are finally connected via the aggregated metal material.

  From the above, as shown in FIG. 4C, a connection part 87 made of a metal material is formed between the terminals 70 and 61, and the terminal 70 and the terminal 61 are electrically connected via the connection part 87. Connected. At this time, the sealing layer 88 is formed by filling the thermoplastic resin composition surrounding the connection portion 87 without mixing the metal material. As a result, insulation between the adjacent terminals 70 and 61 is ensured, so that a short circuit between the adjacent terminals 70 and 61 is prevented.

  In the method for forming the connection portion 87 and the sealing layer 88 as described above, the metal material heated and melted is selectively aggregated between the terminals 70 and 61 to form the connection portion 87, and the thermoplastic resin composition is formed around the connection portion 87. The sealing layer 88 comprised by this can be formed. As a result, the insulation between the adjacent terminals 70 and 61 can be secured and the occurrence of leakage current can be reliably prevented, so that the connection reliability of the connection via the connection portion 87 between the terminals 70 and 61 is improved. Can do.

  In addition, even in a fine wiring circuit, electrical connection between a large number of terminals 70 and 61 can be performed collectively. Furthermore, in the next step [3], the mechanical strength of the connecting portion 87 and the sealing layer 88 can be increased by solidifying the thermoplastic resin composition.

[3] Solidification Step Next, in the heating step [2], after forming the connecting portion 87 and the sealing layer 88, the sealing layer 88 is fixed by solidifying the thermoplastic resin composition.

  Thereby, both the electrical reliability by the connection part 87 between the terminals 70 and 61 and the mechanical reliability by the sealing layer 88 are fully securable.

  Solidification of the thermoplastic resin composition can be carried out by cooling the thermoplastic resin composition heated in the heating step [2].

  Solidification of the thermoplastic resin composition by cooling of the thermoplastic resin composition, that is, fixing of the sealing layer 88 is appropriately selected according to the composition of the thermoplastic resin composition. Specifically, a method by natural cooling may be used, and a method such as blowing cold air is appropriately selected.

  The solidification temperature of the thermoplastic resin composition is not particularly limited, but is preferably lower than the melting point of the metal layer 12. Specifically, the solidification temperature of the thermoplastic resin composition is preferably 10 ° C. or more lower than the melting point of the metal layer 12, more preferably 20 ° C. or more. Moreover, it is preferable that the solidification temperature of a thermoplastic resin composition is 50 degreeC or more, It is more preferable that it is 60 degreeC or more, It is further more preferable that it is 100 degreeC or more. When the solidification temperature of the thermoplastic resin composition is within the above range, the connecting portion 87 can be reliably formed, and the sealing layer 88 can exhibit excellent heat resistance. As a result, insulation between the adjacent terminals 70 and 61 is ensured accurately, and a short circuit between the adjacent terminals 70 and 61 can be more reliably prevented.

  Through the steps as described above, the connecting portion 87 and the sealing layer 88 are formed between the semiconductor device 10 and the mounting substrate 5.

  In the first embodiment and the second embodiment, in order to mount the semiconductor device 10 on the mounting substrate 5, a connecting portion 87 is formed between the terminal 61 and the terminal 70 provided in each of them, and the mounting substrate However, the electronic component mounted on the mounting substrate 5 is not limited to the semiconductor device 10 and includes, for example, an electronic component such as a capacitor.

<Method for Forming Connection Terminal of the Present Invention>
Next, the case where the terminal connection part 87 and the sealing layer 88 are formed in the mounting region 65 using the connection terminal forming method of the present invention will be described.

  In this case, first, the connection terminal forming method of the present invention is applied to form the connection terminal 85 corresponding to the terminal 61 in the mounting region 65 of the mounting substrate 5 and to reinforce the connection terminal 85 so as to surround it. The layer 86 is formed, and then the semiconductor device 10 is connected (mounted) to the mounting region 65 of the mounting substrate 5 on which the connection terminals 85 and the reinforcing layer 86 are provided, whereby the semiconductor device 10 and the mounting substrate 5 are connected. A connecting portion 87 and a sealing layer 88 are formed therebetween.

  Hereinafter, a method for forming the connection terminal 85 and the reinforcing layer 86 on the surface of the mounting substrate 5 on the terminal 61 side in the mounting region 65 by applying the connection terminal forming method of the present invention will be described in detail.

  FIG. 5 is a longitudinal sectional view for explaining a method of forming a connection terminal corresponding to a terminal included in the mounting board using the connection terminal forming method of the present invention. In the following description, the upper side in FIG. 5 is referred to as “upper” and the lower side is referred to as “lower”.

  The method for forming the connection terminal 85 and the reinforcing layer 86 described below includes an arrangement process for arranging the conductive connection sheet 1 on the mounting substrate 5 and a heating process for heating the conductive connection sheet 1.

  In addition, when forming the connection terminal 85 and the reinforcement layer 86, when the resin composition layers 11 and 13 with which the conductive connection sheet 1 is provided are composed of a curable resin composition, it is composed of a thermoplastic resin composition. In some cases, the formation method is slightly different. Therefore, in the following, the case where the resin composition layers 11 and 13 are made of a curable resin composition is referred to as a third embodiment, and the case where the resin composition layers 11 and 13 are made of a thermoplastic resin composition is described as a fourth embodiment for each embodiment. explain.

<< Third Embodiment >>
In the third embodiment in which the resin composition layers 11 and 13 included in the conductive connection sheet 1 are formed of a curable resin composition, the disposing step of disposing the conductive connection sheet 1 on the mounting substrate 5 and the melting point of the metal layer 12. The heating process of heating the conductive connection sheet 1 at a temperature at which the curing of the curable resin composition constituting the resin composition layers 11 and 13 is not completed.

Hereinafter, each process is explained in full detail.
[1] Arrangement Step First, the mounting substrate 5 is prepared.

  Next, the conductive connection sheet 1 is placed on the surface of the mounting substrate 5 on the terminal 61 side. At this time, it arrange | positions so that the 1st part 15 of the conductive connection sheet 1 may correspond to the mounting area | region 65 which should mount the semiconductor device 10. FIG.

  In this state, the conductive connection sheet 1 is thermocompression bonded to the surface of the mounting substrate 5 on the terminal 61 side using a device such as a roll laminator or a press. Thereby, since the 1st resin composition layer 11 will be in a molten state, the terminal 61 which protrudes from the mounting substrate 5 will be embedded in the 1st resin composition layer 11 (FIG. 5 (a)). reference.).

[2] Heating Step Next, in the placement step [1], the conductive connection sheet 1 (metal layer 12) placed on the mounting substrate 5 is melted as shown in FIG. Heat up.

  The temperature for heating the conductive connection sheet 1 is set to the same temperature as the temperature for heating the conductive connection sheet 1 in the heating step [2] of the first embodiment.

  When the conductive connection sheet 1 is heated at such a temperature, the metal layer 12 is melted, and the molten metal layer 12, that is, the low melting point metal material can move in the resin composition layers 11 and 13.

  At this time, when a compound having a flux function is included in the curable resin composition, even if an oxide film is formed on the surface of the metal layer 12 due to the reducing action of the compound having the flux function, It is removed by being reduced. Therefore, the molten metal material is in a state in which the wettability is enhanced and the metal bonding is promoted, so that the molten metal layer 12 is likely to aggregate on the surface of the terminal 61.

  Further, even if an oxide film is formed on the surface of the terminal 61, this oxide film is also removed by the reducing action of the compound having a flux function, and the wettability is enhanced. As a result, metal bonding with the metal material is promoted, and from this point of view, the molten metal layer 12 easily aggregates on the surface of the terminal 61.

  In the present invention, since the metal layer 12 has a layer shape (foil shape), when the molten metal layer 12 is divided into a plurality of pieces and aggregates on the surface of the terminal 61, a part of the metal layer 12 is a terminal 61. It can be accurately suppressed or prevented from remaining in the resin composition layers 11 and 13 without agglomerating. Therefore, it is possible to reliably prevent the occurrence of a leakage current due to a part of the metal layer 12 remaining in the reinforcing layer 86.

  From the above, the molten metal material moves in the resin composition layers 11 and 13, that is, in the curable resin component, and selectively aggregates on the surface of the terminal 61.

  At this time, in the present embodiment, the conductive connection sheet is such that the first portion 15 in which the thickness of the metal layer 12 is thicker than the second portion corresponds to the mounting region 65 where the semiconductor device 10 is to be mounted. 1 is arranged. That is, the conductive connection sheet is provided on the mounting substrate 5 so that the first portion corresponds to the region corresponding to the space between the mounting substrate 5 and the semiconductor device 10 and the second portion corresponds to the other region. 1 is arranged.

  Therefore, in the mounting region 65 corresponding to the space between the mounting substrate 5 and the semiconductor device 10, the amount of the metal material constituting the metal layer 12 increases, and in the other regions, the metal material constituting the metal layer 12. The amount of.

  In other words, in the mounting region 65 where the metal material should be selectively agglomerated on the surface of the terminal 61, the amount of the metal material increases, and the region where the resin component is filled and the insulating property should be maintained without leaving the metal material. In the (region other than the mounting region 65), the amount of the metal material is reduced.

  Therefore, a sufficient amount of metal material can be supplied to the mounting area 65, and unnecessary metal material can be accurately prevented or suppressed from being supplied to other areas. It can be made to agglomerate on the surface of the terminal 61.

  From the above, as shown in FIG. 5C, the connection terminal 85 made of a metal material is formed on the surface of the terminal 61. At this time, the reinforcing layer 86 is formed by filling the curable resin composition surrounding the connection terminal 85 without mixing the metal material. As a result, insulation between the adjacent connection terminals 85 is ensured, so that a short circuit between the adjacent connection terminals 85 is reliably prevented.

  In the method of forming the connection terminal 85 and the reinforcing layer 86 as described above, the metal material heated and melted is selectively aggregated on the terminal 61 to form the connection terminal 85, and the periphery thereof is composed of a curable resin composition. A reinforcing layer 86 can be formed. As a result, insulation between adjacent connection terminals 85 can be ensured.

  Further, even on the mounting substrate 5 having a plurality of terminals 61 at a fine pitch, a plurality of connection terminals 85 can be collectively formed corresponding to the terminals 61.

  In this step [2], the conductive connection sheet 1 and the mounting substrate 5 may be heated in a pressurized state so that the distance between the conductive connection sheet 1 and the terminal 61 is reduced. For example, the conductive connection sheet 1 and the terminal 61 are heated and pressed using means such as a known thermocompression bonding device in a direction in which the conductive connection sheet 1 and the mounting substrate 5 in FIG. Since the distance can be controlled to be constant, the cohesive ability of the molten metal material on the surface of the terminal 61 can be further increased.

  Furthermore, when applying pressure or heating, an ultrasonic wave or an electric field may be applied, or special heating such as laser or electromagnetic induction may be applied.

  The connection terminal 85 and the reinforcing layer 86 are formed through the process [1] and the process [2] as described above. That is, the connection terminal forming method of the present invention is applied to the arrangement step [1] and the heating step [2] for forming the connection terminal 85 and the reinforcing layer 86.

  In addition, when using a curable resin component as a resin component contained in the resin composition layers 11 and 13 as in this embodiment, in the heating step [2], the curable resin composition is not completely cured. It is preferable to keep the state. Accordingly, when the semiconductor device 10 is mounted on the mounting region 65 of the mounting substrate 5 provided with the connection terminals 85 and the reinforcing layer 86, the reinforcing layer 86 is heated to be in a molten state again. become able to.

  As described above, when the connection terminal 85 is formed corresponding to the terminal 61 formed in the mounting region 65 on the mounting substrate 5 using the conductive connection sheet 1, the first portion 15 of the conductive connection sheet 1 is mounted. By arranging and heating the conductive connection sheet 1 on the mounting substrate 5 so as to correspond to the region 65 and the second portion 16 corresponds to a region other than the mounting region 65, the molten metal layer 12 is connected to the terminal. As a result, the connection terminals 85 are formed.

  The connection terminal 85 and the reinforcing layer 86 are heated in a state where the semiconductor device 10 is disposed on the mounting substrate 5 provided with the connection terminal 85 and the reinforcing layer 86 so as to correspond to the mounting region 65. As a result, the connection terminal 85 is in a molten state again, and then the connection terminal 85 is cooled to form the connection portion 87 and the sealing layer 88 between the mounting substrate 5 and the semiconductor device 10. As a result, the mounting substrate 5 and the semiconductor device 10 are electrically connected.

  And in this embodiment, since the curable resin component is contained as a resin component contained in the resin composition layers 11 and 13 and this thing exists in an uncured state, the curable resin composition is cured. By doing so, the sealing layer 88 is fixed. Thereby, the mechanical strength of the connecting portion 87 and the sealing layer 88 can be increased.

<< Fourth Embodiment >>
In the fourth embodiment in which the resin composition layers 11 and 13 included in the conductive connection sheet 1 are made of a thermoplastic resin composition, the disposing step of disposing the conductive connection sheet 1 on the mounting substrate 5 and the melting point of the metal layer 12. It has the above and the heating process which heats the conductive connection sheet 1 at the temperature which the thermoplastic resin composition which comprises the resin composition layers 11 and 13 softens.

Hereinafter, each process is explained in full detail.
[1] Arrangement Step The third embodiment in which the resin composition layers 11 and 13 are made of a thermosetting resin composition also in the present embodiment in which the resin composition layers 11 and 13 are made of a thermoplastic resin composition. Similarly to the embodiment, the conductive connection sheet 1 is thermocompression-bonded (arranged) to the surface of the mounting substrate 5 on the terminal 61 side.

[2] Heating Step Next, in the placement step [1], the conductive connection sheet 1 (metal layer 12) placed on the mounting substrate 5 is melted as shown in FIG. Heat up.

  The temperature for heating the conductive connection sheet 1 is set to the same temperature as the temperature for heating the conductive connection sheet 1 in the heating step [2] of the first embodiment.

  When the conductive connection sheet 1 is heated at such a temperature, the metal layer 12 is melted, and the molten metal layer 12, that is, the low melting point metal material can move in the resin composition layers 11 and 13.

  At this time, when a compound having a flux function is included in the thermoplastic resin composition, even if an oxide film is formed on the surface of the metal layer 12 due to the reducing action of the compound having the flux function, It is removed by being reduced. Therefore, the molten metal material is in a state in which the wettability is enhanced and the metal bonding is promoted, so that the molten metal layer 12 is likely to aggregate on the surface of the terminal 61.

  Further, even if an oxide film is formed on the surface of the terminal 61, this oxide film is also removed by the reducing action of the compound having a flux function, and the wettability is enhanced. As a result, metal bonding with the metal material is promoted, and from this point of view, the molten metal layer 12 easily aggregates on the surface of the terminal 61.

  In the present invention, since the metal layer 12 has a layer shape (foil shape), when the molten metal layer 12 is divided into a plurality of pieces and aggregates on the surface of the terminal 61, a part of the metal layer 12 is a terminal 61. It can be accurately suppressed or prevented from remaining in the resin composition layers 11 and 13 without agglomerating. Therefore, it is possible to reliably prevent the occurrence of a leakage current due to a part of the metal layer 12 remaining in the reinforcing layer 86.

  From the above, the molten metal material moves in the resin composition layers 11 and 13, that is, in the thermoplastic resin component, and selectively aggregates on the surface of the terminal 61.

  At this time, in the present embodiment, the conductive connection sheet is such that the first portion 15 in which the thickness of the metal layer 12 is thicker than the second portion corresponds to the mounting region 65 where the semiconductor device 10 is to be mounted. 1 is arranged. That is, the conductive connection sheet is provided on the mounting substrate 5 so that the first portion corresponds to the region corresponding to the space between the mounting substrate 5 and the semiconductor device 10 and the second portion corresponds to the other region. 1 is arranged.

  Therefore, in the mounting region 65 corresponding to the space between the mounting substrate 5 and the semiconductor device 10, the amount of the metal material constituting the metal layer 12 increases, and in the other regions, the metal material constituting the metal layer 12. The amount of.

  In other words, in the mounting region 65 where the metal material should be selectively agglomerated on the surface of the terminal 61, the amount of the metal material increases, and the region where the resin component is filled and the insulating property should be maintained without leaving the metal material. In the (region other than the mounting region 65), the amount of the metal material is reduced.

  Therefore, a sufficient amount of metal material can be supplied to the mounting area 65, and unnecessary metal material can be accurately prevented or suppressed from being supplied to other areas. It can be made to agglomerate on the surface of the terminal 61.

  From the above, as shown in FIG. 5C, the connection terminal 85 made of a metal material is formed on the surface of the terminal 61. At this time, the thermoplastic resin composition is cooled, so that the thermoplastic resin composition surrounds and solidifies the periphery of the connection terminal 85 without mixing the metal material, whereby the reinforcing layer 86 is formed. As a result, insulation between the adjacent connection terminals 85 is ensured, so that a short circuit between the adjacent connection terminals 85 is reliably prevented.

  In the method of forming the connection terminal 85 and the reinforcing layer 86 as described above, the metal material that has been heated and melted is selectively aggregated on the terminal 61 to form the connection terminal 85, and the periphery thereof is composed of the thermoplastic resin composition. A reinforcing layer 86 can be formed. As a result, insulation between adjacent connection terminals 85 can be ensured.

  Further, even on the mounting substrate 5 having a plurality of terminals 61 at a fine pitch, a plurality of connection terminals 85 can be collectively formed corresponding to the terminals 61.

  In this step [2], the conductive connection sheet 1 and the mounting substrate 5 may be heated in a pressurized state so that the distance between the conductive connection sheet 1 and the terminal 61 is reduced. For example, the conductive connection sheet 1 and the terminal 61 are heated and pressed using means such as a known thermocompression bonding device in a direction in which the conductive connection sheet 1 and the mounting substrate 5 in FIG. Since the distance can be controlled to be constant, the cohesive ability of the molten metal material on the surface of the terminal 61 can be further increased.

  Furthermore, when applying pressure or heating, an ultrasonic wave or an electric field may be applied, or special heating such as laser or electromagnetic induction may be applied.

  The connection terminal 85 and the reinforcing layer 86 are formed through the process [1] and the process [2] as described above. That is, the connection terminal forming method of the present invention is applied to the arrangement step [1] and the heating step [2] for forming the connection terminal 85 and the reinforcing layer 86.

  As described above, when the connection terminal 85 is formed on the surface of the mounting substrate 5 on the terminal 61 side using the conductive connection sheet 1, the conductive connection sheet 1 is disposed on the portion where the connection terminal 85 is to be formed and heated. By doing so, the molten metal layer 12 is selectively agglomerated on the terminal 61, and as a result, the connection terminal 85 is formed.

  The connection terminal 85 and the reinforcing layer 86 are heated in a state where the semiconductor device 10 is disposed on the mounting substrate 5 provided with the connection terminal 85 and the reinforcing layer 86 so as to correspond to the mounting region 65. As a result, the connection terminal 85 is in a molten state again, and then cooled to form the connection portion 87 and the sealing layer 88 between the mounting substrate 5 and the semiconductor device 10. The substrate 5 and the semiconductor device 10 are electrically connected.

  And in this embodiment, since a thermoplastic resin component is contained as a resin component contained in the resin composition layers 11 and 13, the thermoplastic resin composition can be solidified by cooling as described above. Thereby, since the sealing layer 88 is fixed, the mechanical strength of the connection part 87 and the sealing layer 88 can be improved.

  Through the steps as described above, the connection terminal 85 is formed in the mounting region 65 on the mounting substrate 5, and the reinforcing layer 86 is formed so as to surround the connection terminal 85.

  In the first to fourth embodiments, the case where the semiconductor device 10 is mounted on the mounting region 65 of the mounting substrate 5 has been described. However, the mounting regions 66 and 67 of the mounting substrate 5 are also different from the semiconductor device 10. A semiconductor device is mounted. In this case, the thickness of the metal layer 12 of the conductive connection sheet 1 corresponding to each mounting region 66, 67 may be the same as the thickness of the metal layer 12 of the conductive connection sheet 1 corresponding to the mounting region 65. Are preferably different. That is, it is preferable to set the thickness of the metal layer 12 located in each of the mounting regions 66 and 67 according to the type of the semiconductor device mounted in each of the mounting regions 66 and 67. For example, in the present embodiment, as described above, 14 terminals 61 are provided in the mounting area 65, and 18 terminals 63 are provided in the mounting area 67, and the semiconductor device mounted in each area also includes this. In the case where the same number of terminals are provided, a mounting region is formed rather than mounting of the semiconductor device 10 in the mounting region 65 in order to form a connection portion between the terminal included in the semiconductor device and the terminal 6 included in the mounting substrate 5. The mounting of the semiconductor device on 67 requires more metal material. Therefore, the thickness of the metal layer 12 of the conductive connection sheet 1 corresponding to the mounting region 67 is preferably larger than the thickness of the metal layer 12 of the conductive connection sheet 1 corresponding to the mounting region 65. Thereby, when mounting the semiconductor device in the mounting region 67, a sufficient amount of metal material can be supplied between the terminal of the semiconductor device and the terminal 63, so that the mounting substrate 5 and the semiconductor device are mounted in the mounting region 67. Can be electrically connected more reliably.

  In the first to fourth embodiments, the conductive connection sheet 1 shown in FIG. 2 is disposed between the semiconductor device 10 and the mounting substrate 5 to form the connection portion 87 and the sealing layer 88. Although demonstrated, the structure of an electroconductive connection sheet is not limited to this case, For example, electroconductive connection sheet 1 'of a structure as shown below can be used.

  FIG. 6 is a longitudinal sectional view showing another configuration example of the conductive connection sheet of the present invention, and FIG. 7 is a plan view showing the configuration of the second portion of the metal layer provided in the conductive connection sheet of the other configuration example. . In the following description, the upper side in FIG. 6 is referred to as “upper” and the lower side is referred to as “lower”.

  Hereinafter, the conductive connection sheet 1 ′, which is another configuration example of the conductive connection sheet of the present invention, will be described, focusing on the differences from the above-described conductive connection sheet 1, and the same matters will be described. Omitted.

  The conductive connection sheet 1 ′ has the same configuration as that of the conductive connection sheet 1 described above except that the configuration of the second portion 16 of the metal layer 12 included in the conductive connection sheet 1 ′ is different.

  That is, in the conductive connection sheet 1 ′, instead of the thickness of the metal layer 12 being thinner than that of the first portion 15 in the second portion 16, as shown in FIG. Except that 12 is partially provided, the configuration is the same as that of the conductive connection sheet 1 described above.

  Even with this configuration, the amount of the metal material constituting the metal layer 12 corresponding to the first portion 15 is made larger than the amount of the metal material constituting the metal layer 12 corresponding to the second portion 16. be able to.

  Therefore, also by the conductive connection sheet 1 ′ having such a configuration, the connection portion 87 and the connection terminal 85 can be formed by applying the connection method between terminals of the present invention and the formation method of the connection terminal of the present invention described above. .

  In addition, the metal layer 12 should just be partially formed in planar view in the 2nd part, The shape is not specifically limited, A fixed shape may be formed in the pattern shape repeatedly, The shape may be irregular, and a regular shape and an irregular shape may be mixed.

  Specifically, as shown in FIG. 7, for example, the shape of the metal layer 12 includes a dotted pattern (a), a striped pattern (b), a polka dot pattern (c), and a rectangular pattern (d ), Checker pattern shape (e), frame shape (f), lattice pattern shape (g), or multiple frame shapes (h). These shapes are examples, and these shapes can be combined or deformed depending on the purpose and application.

  In this configuration, the metal layer 12 is partially provided in the second portion 16, and the first portion 15 is not provided with the metal layer 12, and has a uniform thickness. As described above, the amount of the metal material constituting the metal layer 12 corresponding to the first portion 15 is larger than the amount of the metal material constituting the metal layer 12 corresponding to the second portion 16. As long as the metal layer 12 in the first portion 15 is limited, the metal layer 12 in the second portion 16 may be partially provided. Further, the shape of the metal layer 12 in the first portion 15 is not particularly limited, and examples thereof include the shape shown in FIG.

  Further, the method for producing the repeatedly patterned metal layer 12 is not particularly limited, but a method of punching a metal foil formed in a planar shape into a predetermined pattern, a method of forming a predetermined pattern by etching or the like, and a shielding plate And a method of forming by vapor deposition, sputtering, plating or the like by using a mask or the like.

  In the present embodiment, the conductive connection sheets 1, 1 ′ have a three-layer structure in which the first resin composition layer 11, the metal layer 12, and the second resin composition layer 13 are laminated in this order. Although the case where the conductive sheet of the present invention is configured has been described with respect to the case where the conductive sheet of the present invention is configured, the stacked body is not limited to such a configuration. For example, the first resin composition layer 11 has a different composition. It may have a four-layer structure provided with the third resin composition layer, and is similar to the metal layer 12 between the first resin composition layer 11 and the third resin composition layer. It may have a five-layer structure including the second metal layer having the configuration described above.

  Moreover, in this embodiment, the thickness of the metal layer 12 becomes thinner than the first portion 15 in the second portion 16 of the conductive connection sheets 1, 1 ′, or the metal layer 12 is partially provided. As a result, the amount of the metal material constituting the metal layer 12 corresponding to the first portion 15 is larger than the amount of the metal material constituting the metal layer 12 corresponding to the second portion 16. However, it is not limited to such a configuration, and for example, these configurations may be combined. Further, for example, when the distance between the semiconductor devices mounted on the mounting substrate is large, a metal material is not necessary between them, and therefore, in the second portion corresponding to these semiconductor devices, the metal layer 12 is not formed. Formation can be omitted.

  In addition, the mounting substrate 5 on which the semiconductor device 10 electrically connected using the conductive connection sheet of the present invention is mounted is electrically connected to an external member (external device) via a terminal 64, thereby allowing various electronic devices. The electronic device is not particularly limited, and examples thereof include personal computers, mobile phones, digital still cameras, televisions, monitor direct-view video tape recorders, electronic dictionaries, calculators, and electronic game devices. It is done.

  As described above, the conductive connection sheet, the connection method between the terminals, the formation method of the connection terminal, and the electronic device of the present invention have been described, but the present invention is not limited to these.

  For example, the configuration of each part of the conductive connection sheet of the present invention can be replaced with an arbitrary one that can exhibit the same function, or an arbitrary configuration can be added.

  Moreover, arbitrary processes may be added to the connection method between terminals and the formation method of a connection terminal of this invention as needed.

DESCRIPTION OF SYMBOLS 1, 1 'Conductive connection sheet 10 Semiconductor device 11 1st resin composition layer 12 Metal layer 13 2nd resin composition layer 15 1st part 16 2nd part 20 Semiconductor chip 21 Terminal 30 Interposer 41 Terminal 5 Mounting board 50 Board 6, 61, 62, 63, 64 Terminal 65, 66, 67 Mounting area 70 Terminal 80, 88 Sealing layer 81, 87 Connection part 85 Connection terminal 86 Reinforcing layer 9, 91, 92, 93 Wiring

Claims (20)

Consists of a laminate comprising a resin composition layer containing a resin component and a metal layer made of a low-melting-point metal material, and electrically connects an electronic component and a mounting board on which the electronic component is mounted. A conductive connection sheet used for
When electrically connecting the electronic component and the mounting substrate, a first portion to be disposed between the electronic component and the mounting substrate, and a second portion other than the first portion, Consists of
The amount of the metal material constituting the metal layer corresponding to the first portion is larger than the amount of the metal material constituting the metal layer corresponding to the second portion. Conductive connection sheet.   The conductive connection sheet according to claim 1, wherein a plurality of the electronic components are mounted on the mounting substrate.   3. The conductive connection sheet according to claim 1, wherein in the first portion, the thickness of the metal layer is thicker than the thickness of the metal layer in the second portion.   The conductive connection sheet according to claim 1, wherein the metal layer is partially provided in the second portion.   The said mounting substrate and the said electronic component have a terminal, and the said terminals are electrically connected through the connection part formed using the said conductive connection sheet. Conductive connection sheet.   The conductive resin sheet according to claim 1, wherein the resin composition layer includes a resin composition containing the resin component and a compound having a flux function.   The conductive connection sheet according to claim 6, wherein the compound having a flux function contains a compound having at least one of a phenolic hydroxyl group and a carboxyl group. The conductive connection sheet according to claim 6 or 7, wherein the compound having the flux function contains a compound represented by the following general formula (1).
_{HOOC- (CH 2) n-COOH} ····· (1)
(In Formula (1), n is an integer of 1-20.) The conductive connection sheet according to claim 6 or 7, wherein the compound having the flux function contains at least one of compounds represented by the following general formula (2) and the following general formula (3).

[Wherein, R ^{1 to} R ⁵ are each independently a monovalent organic group, and at least one of R ^{1 to} R ⁵ is a hydroxyl group. ]

[Wherein, R ^{6 to} R ²⁰ are each independently a monovalent organic group, and at least one of R ^{6 to} R ²⁰ is a hydroxyl group or a carboxyl group. ]   In the said resin composition, content of the compound which has the said flux function is 1 to 50 weight%, The electrically conductive connection sheet in any one of Claim 6 thru | or 9.   The metal layer includes tin (Sn), lead (Pb), silver (Ag), bismuth (Bi), indium (In), zinc (Zn), nickel (Ni), antimony (Sb), iron (Fe), 11. The alloy of at least two or more metals selected from the group consisting of aluminum (Al), gold (Au), germanium (Ge), and copper (Cu), or a simple substance of tin. Conductive connection sheet.   The conductive connection sheet according to claim 11, wherein the metal layer is composed mainly of a Sn—Pb alloy, a Sn—Ag—Cu alloy, or a Sn—Ag alloy.   The said metal layer is a conductive connection sheet of Claim 12 comprised as a main material a Sn-37Pb alloy or a Sn-3.0Ag-0.5Cu alloy.   The laminate is composed of two resin composition layers and one metal layer, and the resin composition layer, metal layer, and resin composition layer are laminated in this order. The conductive connection sheet according to any one of 13.   The conductive connection sheet according to claim 1, wherein the electronic component is a semiconductor device. An arrangement step of arranging the conductive connection sheet according to any one of claims 1 to 15 between the electronic component and the mounting substrate;
A heating step of heating the conductive connection sheet at a temperature that is equal to or higher than the melting point of the metal material and does not complete the curing of the resin composition;
And a curing step for curing the resin composition. An arrangement step of arranging the conductive connection sheet according to any one of claims 1 to 15 between the electronic component and the mounting substrate;
A heating step of heating the conductive connection sheet at a temperature that is equal to or higher than the melting point of the metal material and the resin composition is softened;
And a solidifying step for solidifying the resin composition. An arrangement step of arranging the conductive connection sheet according to claim 1 on the mounting substrate;
And a heating step of heating the conductive connection sheet at a temperature that is equal to or higher than the melting point of the metal material and does not complete the curing of the resin composition. An arrangement step of arranging the conductive connection sheet according to claim 1 on the mounting substrate;
And a heating step of heating the conductive connection sheet at a temperature that is equal to or higher than the melting point of the metal material and the resin composition is softened.   An electronic apparatus comprising the electronic component and the mounting board that are electrically connected using the conductive connection sheet according to claim 1.

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