JP2016184635A5 - - Google Patents
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- Publication number
- JP2016184635A5 JP2016184635A5 JP2015063573A JP2015063573A JP2016184635A5 JP 2016184635 A5 JP2016184635 A5 JP 2016184635A5 JP 2015063573 A JP2015063573 A JP 2015063573A JP 2015063573 A JP2015063573 A JP 2015063573A JP 2016184635 A5 JP2016184635 A5 JP 2016184635A5
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- depositing
- semiconductor
- multilayer film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012212 insulator Substances 0.000 claims 38
- 239000004065 semiconductor Substances 0.000 claims 14
- 238000000151 deposition Methods 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 239000004020 conductor Substances 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 4
- 150000002500 ions Chemical class 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 238000002513 implantation Methods 0.000 claims 1
- 229910052743 krypton Inorganic materials 0.000 claims 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 229910052724 xenon Inorganic materials 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015063573A JP6562674B2 (ja) | 2015-03-26 | 2015-03-26 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015063573A JP6562674B2 (ja) | 2015-03-26 | 2015-03-26 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016184635A JP2016184635A (ja) | 2016-10-20 |
| JP2016184635A5 true JP2016184635A5 (OSRAM) | 2018-05-10 |
| JP6562674B2 JP6562674B2 (ja) | 2019-08-21 |
Family
ID=57243258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015063573A Expired - Fee Related JP6562674B2 (ja) | 2015-03-26 | 2015-03-26 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6562674B2 (OSRAM) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110402497B (zh) * | 2017-03-29 | 2024-08-06 | 株式会社半导体能源研究所 | 半导体装置、半导体装置的制造方法 |
| CN112385021A (zh) * | 2018-06-29 | 2021-02-19 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| US11508850B2 (en) | 2018-09-05 | 2022-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| WO2021220401A1 (ja) * | 2020-04-28 | 2021-11-04 | シャープ株式会社 | トランジスタ、表示装置及びトランジスタの製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008311452A (ja) * | 2007-06-15 | 2008-12-25 | Toshiba Corp | 半導体装置 |
| US8878288B2 (en) * | 2011-04-22 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102103913B1 (ko) * | 2012-01-10 | 2020-04-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| JP6322503B2 (ja) * | 2013-07-16 | 2018-05-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6345023B2 (ja) * | 2013-08-07 | 2018-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
-
2015
- 2015-03-26 JP JP2015063573A patent/JP6562674B2/ja not_active Expired - Fee Related
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