JP6562674B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP6562674B2
JP6562674B2 JP2015063573A JP2015063573A JP6562674B2 JP 6562674 B2 JP6562674 B2 JP 6562674B2 JP 2015063573 A JP2015063573 A JP 2015063573A JP 2015063573 A JP2015063573 A JP 2015063573A JP 6562674 B2 JP6562674 B2 JP 6562674B2
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Prior art keywords
insulator
conductor
transistor
semiconductor
substrate
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JP2015063573A
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Japanese (ja)
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JP2016184635A (ja
JP2016184635A5 (OSRAM
Inventor
宮入　秀和
秀和 宮入
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2015063573A priority Critical patent/JP6562674B2/ja
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Publication of JP2016184635A5 publication Critical patent/JP2016184635A5/ja
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  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2015063573A 2015-03-26 2015-03-26 半導体装置の作製方法 Expired - Fee Related JP6562674B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015063573A JP6562674B2 (ja) 2015-03-26 2015-03-26 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015063573A JP6562674B2 (ja) 2015-03-26 2015-03-26 半導体装置の作製方法

Publications (3)

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JP2016184635A JP2016184635A (ja) 2016-10-20
JP2016184635A5 JP2016184635A5 (OSRAM) 2018-05-10
JP6562674B2 true JP6562674B2 (ja) 2019-08-21

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JP2015063573A Expired - Fee Related JP6562674B2 (ja) 2015-03-26 2015-03-26 半導体装置の作製方法

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110402497B (zh) * 2017-03-29 2024-08-06 株式会社半导体能源研究所 半导体装置、半导体装置的制造方法
CN112385021A (zh) * 2018-06-29 2021-02-19 株式会社半导体能源研究所 半导体装置的制造方法
US11508850B2 (en) 2018-09-05 2022-11-22 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2021220401A1 (ja) * 2020-04-28 2021-11-04 シャープ株式会社 トランジスタ、表示装置及びトランジスタの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008311452A (ja) * 2007-06-15 2008-12-25 Toshiba Corp 半導体装置
US8878288B2 (en) * 2011-04-22 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102103913B1 (ko) * 2012-01-10 2020-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP6322503B2 (ja) * 2013-07-16 2018-05-09 株式会社半導体エネルギー研究所 半導体装置
JP6345023B2 (ja) * 2013-08-07 2018-06-20 株式会社半導体エネルギー研究所 半導体装置およびその作製方法

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