JP2016178221A - Microwave device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a microwave device capable of suppressing an electromagnetic wave from being radiated to the outside of the device.SOLUTION: A microwave device comprises: a first multilayer resin substrate; a microwave circuit provided on an upper surface side of the first multilayer resin substrate; a signal line provided on an upper surface of the first multilayer resin substrate; an electromagnetic shield cover covering the microwave circuit and the signal line; a second multilayer resin substrate provided on a bottom surface of the first multilayer resin substrate; a first inner through hole provided inside the first and second multilayer resin substrates and connected to the signal line; a second inner through hole provided inside the first and second multilayer resin substrates, connected to the electromagnetic shield cover, and surrounding the first inner through hole; and a housing provided on a bottom surface side of the second multilayer resin substrate and connected to the second inner through hole.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a microwave device that propagates microwaves.

  Conventionally, a technique for packaging an integrated circuit has been proposed (see, for example, Patent Document 1). In addition, a technique for packaging a microwave IC (Integrated Circuit) with a metal material is also known.

Japanese Patent No. 3780222

  However, in the conventional technology for packaging a microwave IC with a metal material, an RF (Radio Frequency) electromagnetic wave is radiated from an external through terminal of the device, and the radiated RF electromagnetic wave is input / output of other devices of the module including the device. There is a problem that oscillation occurs due to coupling with a signal, and the propagation characteristics of the microwave deteriorate.

  The present invention has been made in view of the above, and an object of the present invention is to obtain a microwave device that suppresses radiation of electromagnetic waves to the outside of the device.

  In order to solve the above-described problems and achieve the object, a microwave device according to the present invention includes a first multilayer resin substrate, a microwave circuit provided on the upper surface side of the first multilayer resin substrate, A signal line provided on the upper surface of the first multilayer resin substrate, an electromagnetic shield cover for covering the microwave circuit and the signal line, and a second multilayer resin provided on the bottom surface of the first multilayer resin substrate A first internal through hole connected to the signal line, the first multilayer resin substrate, and the first multilayer resin substrate. A second internal through hole that is connected to the electromagnetic shield cover and surrounds the first internal through hole; and a bottom side of the second multilayer resin substrate. Provided And a housing connected to said second internal through-hole.

  According to the present invention, there is an effect that radiation of electromagnetic waves to the outside of the device can be suppressed.

The figure which shows the cross section of the microwave device which concerns on this Embodiment The figure which shows the upper surface of the output amplification device in the microwave device of FIG. The figure which shows the cross section of the 1st multilayer resin substrate in the output amplification device of the microwave device of FIG. The figure which shows the bottom face of the 1st multilayer resin substrate in the output amplification device of the microwave device of FIG. The figure which shows the upper surface of the 2nd multilayer resin substrate in the microwave device of FIG.

  Hereinafter, a microwave device according to an embodiment of the present invention will be described in detail with reference to the drawings. In addition, this invention is not limited by this Embodiment.

Embodiment.
First, the configuration of the microwave device 500 according to the embodiment of the present invention will be described. FIG. 1 is a diagram showing a cross section of a microwave device 500 according to the present embodiment. As shown in FIG. 1, a microwave device 500 according to the present embodiment includes an output amplifying device 100 having a first multilayer resin substrate 1 and a second provided on the bottom surface 102 of the first multilayer resin substrate 1. The multilayer resin substrate 2 and the housing 3 provided on the bottom surface 202 side of the second multilayer resin substrate 2.

  The output amplification device 100 includes, for example, a first multilayer resin substrate 1 attached to the upper surface 201 of the second multilayer resin substrate 2 by reflow, and a metal plate 11 provided on the upper surface 101 of the first multilayer resin substrate 1. And a microwave circuit 4 provided on the upper surface of the metal plate 11. That is, the microwave circuit 4 is provided on the upper surface 101 side of the first multilayer resin substrate 1. In addition, the output amplifying device 100 includes a signal line 300 provided on the upper surface 101 of the first multilayer resin substrate 1 and an electromagnetic shield cover 8 that covers the metal plate 11 and the signal line 300. The signal line 300 will be described later with reference to FIG.

  FIG. 2 is a diagram showing the upper surface 501 of the output amplification device 100 in the microwave device 500 of FIG. In FIG. 2, the electromagnetic shield cover 8 is not shown. In the present embodiment, the metal plate 11 is a plate for thermal expansion coefficient matching formed of copper, molybdenum, or the like, and is attached to the upper surface 101 of the first multilayer resin substrate 1 by adhesion or soldering. .

  In the present embodiment, the microwave circuit 4 is a high power amplifier (HPA), a transistor chip 5 disposed on the upper surface of the metal plate 11, an input matching circuit 6, and an output matching circuit 7. And have. The transistor chip 5 is disposed on the upper surface of the metal plate 11 so as to be sandwiched between the input matching circuit 6 and the output matching circuit 7. The transistor chip 5, the input matching circuit 6 and the output matching circuit 7 are bonded or soldered. It is attached to the upper surface of the metal plate 11 by attaching. The transistor chip 5 is connected to the input matching circuit 6 through a first bonding wire 45 and is connected to the output matching circuit 7 through a second bonding wire 46.

  In the present embodiment, the microwave circuit 4 is an HPA using a field effect transistor (FET) as the transistor chip 5, but the type of the microwave circuit 4 is not limited. The microwave circuit 4 may be a circuit such as an amplifier, a switch, or a phase shifter other than the HPA. In the present embodiment, the microwave circuit 4 is an HPA of a hybrid microwave integrated circuit (HMIC), but may be a monolithic microwave integrated circuit (MMIC). .

  A signal line 300 is provided on the upper surface 101 of the first multilayer resin substrate 1. The signal line 300 includes an input RF line 20, a gate bias supply line 22 that supplies a gate bias to the microwave circuit 4, an output RF line 30, and a drain bias supply line 32 that supplies a drain bias to the microwave circuit 4. Have In addition, the metal plate 11 provided with the microwave circuit 4, the input RF line 20, the gate bias supply line 22, the output RF line 30, and the drain bias supply line 32 are provided on the upper surface 101 of the first multilayer resin substrate 1. The first ground pattern 10 is provided at a position outside the provided position.

  That is, the first ground pattern 10 surrounds the upper surface of the first multilayer resin substrate 1 so as to surround the microwave circuit 4, the input RF line 20, the gate bias supply line 22, the output RF line 30, and the drain bias supply line 32. 101. The electromagnetic shield cover 8 is attached to the first ground pattern 10 and has a metal plate 11 provided with the microwave circuit 4, an input RF line 20, a gate bias supply line 22, an output RF line 30, and a drain bias supply line. 32 is covered. The input matching circuit 6 is connected to the input RF line 20 by a third bonding wire 47, and the output matching circuit 7 is connected to the output RF line 30 by a fourth bonding wire 48.

  The gate bias supply line 22 is provided with a gate bias circuit 24 including a first chip capacitor 42 that is short-circuited at an RF drive frequency and a chip resistor 43 for suppressing oscillation. The drain bias supply line 32 is provided with a drain bias circuit 34 including a second chip capacitor 44 that is short-circuited at the RF drive frequency. The upper surface 101 of the first multilayer resin substrate 1 is also provided with a DC (Direct Current) cut capacitor 41 that blocks direct current from leaking out of the output amplification device 100 from the input RF line 20 and the output RF line 30. ing.

  In order to electromagnetically shield the gate bias circuit 24, the drain bias circuit 34, the DC cut capacitor 41, and the microwave circuit 4, an electromagnetic shield cover 8 is attached to the first ground pattern 10 by adhesion or soldering.

  FIG. 3 is a view showing a cross section of the first multilayer resin substrate 1 in the output amplifying device 100 of the microwave device 500 of FIG. The cross section of the first multilayer resin substrate 1 in FIG. 3 is a plane parallel to the upper surface 501 of the output amplification device 100 in FIG. As shown in FIG. 3, the first multilayer resin substrate 1 includes a first input RF signal through hole 21 connected to the input RF line 20 and a first gate control connected to the gate bias supply line 22. A signal through hole 23 is provided. In addition, in the first multilayer resin substrate 1, a first output RF signal through hole 31 connected to the output RF line 30 and a first drain signal through hole 33 connected to the drain bias supply line 32 are provided. Is provided.

  Furthermore, a plurality of first ground through holes 17 connected to the first ground pattern 10 are provided inside the first multilayer resin substrate 1. The plurality of first ground through holes 17 include a first input RF signal through hole 21, a first gate control signal through hole 23, a first output RF signal through hole 31, and a first drain signal through hole 33. It is provided at a position outside the provided position. That is, the plurality of first ground through holes 17 include the first input RF signal through hole 21, the first gate control signal through hole 23, the first output RF signal through hole 31, and the first drain signal through hole. It is provided inside the first multilayer resin substrate 1 so as to surround 33. Two adjacent ones of the plurality of first ground through holes 17 are provided at an interval of ¼ or less of λ. λ is the wavelength of the RF drive signal.

  A first heat radiation embedded member 15 connected to the metal plate 11 is also provided inside the first multilayer resin substrate 1. The first heat radiation embedded member 15 is surrounded by the first input RF signal through hole 21, the first gate control signal through hole 23, the first output RF signal through hole 31, and the first drain signal through hole 33. As shown, the first multilayer resin substrate 1 is provided at the center in the plan view. The first heat dissipating embedded member 15 is formed of a metal such as copper, aluminum, or an aluminum alloy. In the present embodiment, the shape of the first heat dissipating embedded member 15 is a cylinder or a square column. The first heat radiation embedded member 15 may be replaced with a plurality of heat radiation through holes depending on the amount of heat generated.

  Inside the first multilayer resin substrate 1 are a first RF signal suppression filter 25 connected to the first gate control signal through hole 23 and a second RF signal connected to the first drain signal through hole 33. A suppression filter 35 is provided.

  FIG. 4 is a diagram showing the bottom surface 102 of the first multilayer resin substrate 1 in the output amplifying device 100 of the microwave device 500 of FIG. As shown in FIG. 4, the bottom surface 102 of the first multilayer resin substrate 1 has a first input RF signal terminal 26 that is a bottom terminal of the first input RF signal through hole 21 and a first gate control. A first gate control terminal 27 which is a bottom terminal of the signal through hole 23 is provided. In addition, the bottom surface 102 of the first multilayer resin substrate 1 has a first output RF signal terminal 36 that is a bottom terminal of the first output RF signal through hole 31 and a first drain signal through hole 33. A first drain power supply terminal 37 which is a bottom terminal is provided. Further, the bottom surface 102 of the first multilayer resin substrate 1 has a plurality of first ground terminals 18 that are bottom terminal terminals of the plurality of first ground through holes 17 and a bottom surface of the first heat radiation embedded member 15. A first ground pad 19 is provided as a terminal terminal.

  Next, the second multilayer resin substrate 2 to which the output amplification device 100 is attached will be described. As shown in FIG. 1, the second multilayer resin substrate 2 is provided on the bottom surface 102 of the first multilayer resin substrate 1. FIG. 5 is a view showing the upper surface 201 of the second multilayer resin substrate 2 in the microwave device 500 of FIG. As can be understood from FIGS. 1 and 5, the second multilayer resin substrate 2 includes a second input RF signal through hole 61 connected to the first input RF signal through hole 21 and a first gate control. A second gate control signal through hole 63 connected to the signal through hole 23 is provided. In addition, the second multilayer resin substrate 2 has a second output RF signal through hole 71 connected to the first output RF signal through hole 31 and a first drain signal through hole 33 connected to the first output RF signal through hole 31. A second drain power supply through hole 73 is provided.

  First input RF signal through hole 21, first gate control signal through hole 23, first output RF signal through hole 31 and first drain signal through hole provided inside first multilayer resin substrate 1 33, a second input RF signal through hole 61, a second gate control signal through hole 63, a second output RF signal through hole 71, and a second drain provided inside the second multilayer resin substrate 2. A first internal through hole 81 is constituted by the power supply through hole 73. The first internal through hole 81 is provided inside the first multilayer resin substrate 1 and the second multilayer resin substrate 2 and is connected to the signal line 300.

  Further, a plurality of second ground through holes 57 connected to the plurality of first ground through holes 17 provided in the first multilayer resin substrate 1 are provided in the second multilayer resin substrate 2. It has been. The plurality of second ground through holes 57 include a second input RF signal through hole 61, a second gate control signal through hole 63, a second output RF signal through hole 71, and a second drain power supply through hole 73. It is provided at a position outside the provided position. That is, the plurality of second ground through holes 57 include the second input RF signal through hole 61, the second gate control signal through hole 63, the second output RF signal through hole 71, and the second drain power supply through hole. 73 is provided inside the second multilayer resin substrate 2.

  A plurality of first ground through holes 17 provided in the first multilayer resin substrate 1 and a plurality of second ground through holes 57 provided in the second multilayer resin substrate 2 Two internal through holes 82 are formed. The second internal through hole 82 is provided inside the first multilayer resin substrate 1 and the second multilayer resin substrate 2, is connected to the electromagnetic shield cover 8, and surrounds the first internal through hole 81. Yes.

  A second heat radiation embedded member 55 connected to the first heat radiation embedded member 15 is also provided inside the second multilayer resin substrate 2. The second heat radiation embedded member 55 is surrounded by the second input RF signal through hole 61, the second gate control signal through hole 63, the second output RF signal through hole 71, and the second drain power supply through hole 73. As shown in the plan view, the second multilayer resin substrate 2 is provided at the central portion in the plan view. The second heat radiating embedded member 55 is formed of a metal such as copper, aluminum, or an aluminum alloy. In the present embodiment, the shape of the second heat radiating embedded member 55 is a cylinder or a square column.

  Inside the second multilayer resin substrate 2, an input RF signal line 60 connected to the second input RF signal through hole 61, a gate control signal line 62 connected to the second gate control signal through hole 63, An output RF signal line 70 connected to the second output RF signal through hole 71 and a drain power supply line 72 connected to the second drain power supply through hole 73 are provided. As shown in FIG. 1, a second ground pattern 50 is provided on the peripheral portion 203 of the upper surface 201 of the second multilayer resin substrate 2. The input RF signal line 60 is composed of a strip line having the second ground pattern 50 as the ground. A third ground pattern 53 is provided on the bottom surface 202 of the second multilayer resin substrate 2. The output RF signal line 70 is formed of a strip line having the third ground pattern 53 as a ground.

  Any form of the input RF signal line 60 and the output RF signal line 70 may be used as long as the emission of electromagnetic waves is suppressed. In the present embodiment, the input RF signal line 60 and the output RF signal line 70 are strip lines, but are not limited thereto. Although the gate control signal line 62 and the drain power supply line 72 are configured in the inner layer in this embodiment, the gate bias circuit 24, the drain bias circuit 34, the first RF signal suppression filter 25 of the first multilayer resin substrate 1, and If the RF superimposed signal is sufficiently attenuated by the second RF signal suppression filter 35, it may be exposed on the upper surface 201 of the second multilayer resin substrate 2.

  On the upper surface 201 of the second multilayer resin substrate 2, there are a second input RF signal terminal 66 that is a terminal terminal of the second input RF signal through hole 61 and a terminal terminal of the second gate control signal through hole 63. A second gate control terminal 67, a second output RF signal terminal 76 that is a termination terminal of the second output RF signal through hole 71, and a second terminal that is a termination terminal of the second drain power supply through hole 73. A drain power supply terminal 77 is provided. In addition, a plurality of second ground terminals 58 that are termination terminals of the plurality of second ground through holes 57 and the second heat radiation embedded member 55 are connected to the upper surface 201 of the second multilayer resin substrate 2. The second ground pad 59 is formed.

  The second input RF signal terminal 66 is provided at a position facing the first input RF signal terminal 26 on the bottom surface 102 of the first multilayer resin substrate 1. The second gate control terminal 67 is provided at a position facing the first gate control terminal 27 on the bottom surface 102 of the first multilayer resin substrate 1. The second output RF signal terminal 76 is provided at a position facing the first output RF signal terminal 36 on the bottom surface 102 of the first multilayer resin substrate 1. The second drain power supply terminal 77 is provided at a position facing the first drain power supply terminal 37 on the bottom surface 102 of the first multilayer resin substrate 1. The plurality of second ground terminals 58 are provided at positions facing the plurality of first ground terminals 18 on the bottom surface 102 of the first multilayer resin substrate 1. The second ground pad 59 is provided at a position facing the first ground pad 19 on the bottom surface 102 of the first multilayer resin substrate 1.

  First input RF signal terminal 26, first gate control terminal 27, first output RF signal terminal 36, first drain power supply terminal 37, and a plurality of first power supply terminals 37 on bottom surface 102 of first multilayer resin substrate 1. The ground terminal 18 and the first ground pad 19, the second input RF signal terminal 66, the second gate control terminal 67, the second output RF signal terminal 76 on the upper surface 201 of the second multilayer resin substrate 2, the first The second drain power supply terminal 77, the plurality of second ground terminals 58, and the second ground pad 59 are connected by solder. The output amplification device 100 is attached to the upper surface 201 of the second multilayer resin substrate 2 by connection using solder. Each terminal on the bottom surface 102 of the first multilayer resin substrate 1 and each terminal on the top surface 201 of the second multilayer resin substrate 2 are joined by a BGA (Ball Grid Array) method joining method with a solder ball interposed therebetween. May be.

  As described above, in the state where the first multilayer resin substrate 1 is attached to the upper surface 201 of the second multilayer resin substrate 2, the output amplification device 100 and the second multilayer resin substrate 2 are connected. Each RF signal and control signal propagate through each terminal.

  As described above, the third ground pattern 53 is provided on the bottom surface 202 of the second multilayer resin substrate 2. The third ground pattern 53 is connected to the second heat radiation embedded member 55 and the plurality of second ground through holes 57. In the present embodiment, the second multilayer resin substrate 2 is attached to the upper surface 301 of the housing 3 by screws with the third ground pattern 53 in contact with the upper surface 301 of the housing 3. That is, the plurality of second ground through holes 57 are connected to the housing 3. Furthermore, the housing 3 is connected to the second internal through hole 82.

  Next, the operation of the microwave device 500 according to the embodiment of the present invention will be described. The gate bias is from the gate control signal line 62 of the second multilayer resin substrate 2 to the second gate control signal through hole 63, the second gate control terminal 67, and the first gate control terminal of the first multilayer resin substrate 1. 27, the first gate control signal through hole 23, the first RF signal suppression filter 25, the gate bias supply line 22, and the gate bias circuit 24 are applied to the microwave circuit 4 by the input RF line 20. Similarly, the drain bias is applied from the drain power supply line 72 to the second drain power supply through hole 73, the second drain power supply terminal 77, the first drain power supply terminal 37 of the first multilayer resin substrate 1, and the first drain signal. The signal is applied to the microwave circuit 4 by the output RF line 30 through the through hole 33, the second RF signal suppression filter 35, and the drain bias circuit 34.

  The RF signal propagated through the input RF signal line 60 of the second multilayer resin substrate 2 in the above-described state is output from the output amplification device 100 via the second input RF signal through hole 61 and the second input RF signal terminal 66. Propagates inside. The RF signal propagated inside the output amplification device 100 passes through the first input RF signal terminal 26, the first input RF signal through hole 21, the DC cut capacitor 41, and the input RF line 20 of the first multilayer resin substrate 1. Then, it propagates to the microwave circuit 4 through the third bonding wire 47 and is amplified by the microwave circuit 4. Similarly, the RF signal propagated to the output RF line 30 via the fourth bonding wire 48 is output from the first output RF signal terminal 36 through the DC cut capacitor 41 and the first output RF signal through hole 31. It is output outside the amplification device 100. The RF signal output to the outside of the output amplifying device 100 is micronized via the second output RF signal terminal 76, the second output RF signal through hole 71, and the output RF signal line 70 of the second multilayer resin substrate 2. Is output to the outside of the wave device 500.

  The heat generated in the transistor chip 5 of the microwave circuit 4 is generated by the metal plate 11, the first heat radiation embedding member 15 inside the first multilayer resin substrate 1, and the second heat inside the second multilayer resin substrate 2. It is discharged to the housing 3 via the second heat radiation embedded member 55. Since there is a difference in thermal expansion between the first heat radiation embedding member 15 and the transistor chip 5, the necessity of using the metal plate 11 is determined by the size of the transistor chip 5.

  The housing 3, a plurality of second ground through holes 57 inside the second multilayer resin substrate 2, a plurality of second ground terminals 58, and a plurality of first ground terminals inside the first multilayer resin substrate 1 18, the plurality of first ground through holes 17, the first ground pattern 10, and the electromagnetic shield cover 8 provided in the first ground pattern 10 are joined, and the potential is the same ground potential.

  Next, the effect of this embodiment will be described. Except for the input RF signal line 60 and the output RF signal line 70, the RF signal through hole, the RF signal terminal, the RF line, and the microwave circuit 4 connected by the bonding wire are all included in the housing 3 and the second circuit. A plurality of second ground through holes 57 in the multilayer resin substrate 2, a plurality of second ground terminals 58, a plurality of first ground terminals 18 in the first multilayer resin substrate 1, and a plurality of first The ground through hole 17, the first ground pattern 10, and the electromagnetic ground cover 8 provided on the first ground pattern 10 are housed in a pseudo ground casing.

  The pseudo ground casing can suppress the radiation of the electromagnetic wave from the microwave device 500 to the outside and the coupling of the electromagnetic wave from the outside to the microwave device 500. Thereby, it is possible to avoid the oscillation and the deterioration of the propagation characteristics of the microwave due to the combination of the output signal from the microwave device 500 and the output signal of another microwave device constituting the module including the microwave device 500. it can.

  In the microwave device 500, since the electromagnetic shield cover 8 is provided, the microwave circuit 4 operates in the hollow caddy. That is, the microwave circuit 4 operates in the air. Therefore, it is possible to avoid the deterioration of the propagation characteristics of the microwave that occurs when a mold resin having dielectric loss is used.

  In the microwave device 500, the first heat radiation embedded member 15 is provided inside the first multilayer resin substrate 1, and the second heat radiation embedded member 55 is disposed inside the second multilayer resin substrate 2. Is provided. Therefore, the microwave device 500 converts the heat generated from the transistor chip 5 of the microwave circuit 4 into the metal plate 11, the first heat radiation embedded member 15 inside the first multilayer resin substrate 1, and the second It can be effectively discharged to the housing 3 via the second heat radiation embedded member 55 inside the multilayer resin substrate 2.

  Whereas a conventional HPA device composed of a metal package requires an external bias circuit, the microwave device 500 includes a gate bias circuit 24 and a drain bias circuit 34 therein. Therefore, the microwave device 500 is smaller than a device including a conventional HPA. In addition, in the conventional device, the HPA characteristic may vary due to the reflected wave component generated in the external bias circuit, but the microwave device 500 includes the gate bias circuit 24 and the drain bias circuit 34 inside. , Fluctuations in HPA characteristics can be suppressed.

  In the microwave device 500, an input / output bias circuit, a gate control signal line and a drain power supply through hole, a gate control terminal and a drain power supply terminal on the substrate interface are housed in a pseudo ground casing. Therefore, the microwave device 500 can suppress radiation or coupling of electromagnetic waves superimposed on each circuit pattern, through hole, and terminal.

  Further, the electromagnetic waves leaking from the gate bias circuit 24 and the drain bias circuit 34 are not only attenuated by the first chip capacitor 42, the chip resistor 43 for suppressing oscillation and the second chip capacitor 44, but also the first RF capacitor. The signal suppression filter 25 and the second RF signal suppression filter 35 are also suppressed. Therefore, it is possible to suppress electromagnetic waves that are radiated or bonded to the outside of the microwave device 500 by being superimposed on the gate control signal line 62 and the drain power supply line 72. Electromagnetic waves radiated or bonded to the outside of the microwave device 500 are suppressed, so that the other microwave devices constituting the module including the microwave device 500 are connected to each other via the gate control signal and the drain power supply line. Oscillation due to coupling of electromagnetic waves and deterioration of the characteristics of microwaves can be avoided.

  Since the inexpensive first multilayer resin substrate 1 can be used in the microwave device 500, the microwave device 500 can be manufactured at a lower cost than a conventional metal package. The first multilayer resin substrate 1 is attached to the second multilayer resin substrate 2 by a reflow process. Since the reflow process is used, compared to the case where the input / output RF terminal is connected to the external line by ribbon bonding or soldering after screwing the HPA composed of a conventional metal package to the housing, the microwave is used. A module including the device 500 or the microwave device 500 can be manufactured at low cost.

  In the microwave device 500, the first multilayer resin substrate 1 and the second multilayer resin substrate 2 may be the same type of resin substrate. When the first multilayer resin substrate 1 and the second multilayer resin substrate 2 are the same type of resin substrate, the output is compared with the case where a device composed of a conventional metal package or ceramic package is attached to the multilayer resin substrate. The difference in thermal expansion coefficient between the amplification device 100 and the second multilayer resin substrate 2 can be reduced. Therefore, the microwave device 500 maintains high bonding reliability at the bonding portion between the output amplifying device 100 and the second multilayer resin substrate 2 even when there is a temperature change due to self-heating or a temperature change due to the environment. be able to.

  The structure shown in the embodiment shows an example of the contents of the present invention, and can be combined with another known technique, and a part of the structure can be combined without departing from the gist of the present invention. It can be omitted or changed.

  DESCRIPTION OF SYMBOLS 1 1st multilayer resin board, 2 2nd multilayer resin board, 3 housing | casing, 4 microwave circuit, 8 electromagnetic shielding cover, 81 1st internal through-hole, 82 2nd internal through-hole, 300 signal line, 500 Microwave device.

Claims (6)

A first multilayer resin substrate;
A microwave circuit provided on the upper surface side of the first multilayer resin substrate;
A signal line provided on the upper surface of the first multilayer resin substrate;
An electromagnetic shield cover covering the microwave circuit and the signal line;
A second multilayer resin substrate provided on the bottom surface of the first multilayer resin substrate;
The first multilayer resin substrate and the second multilayer resin substrate are provided inside the first multilayer resin substrate, and a first internal through hole connected to the signal line,
Provided inside the first multilayer resin substrate and the second multilayer resin substrate, connected to the electromagnetic shield cover, and a second internal through hole surrounding the first internal through hole;
A microwave device, comprising: a housing that is provided on a bottom surface side of the second multilayer resin substrate and is connected to the second internal through hole. On the upper surface of the first multilayer resin substrate, further comprising a ground pattern provided on the first peripheral edge that is a position outside the position where the microwave circuit and the signal line are provided,
The signal line is provided on an upper surface of the first multilayer resin substrate and an input RF line provided on the upper surface of the first multilayer resin substrate, and a gate bias that supplies a gate bias to the microwave circuit A supply line, an output RF line provided on the upper surface of the first multilayer resin substrate, and a drain bias supply for supplying a drain bias to the microwave circuit provided on the upper surface of the first multilayer resin substrate A track,
The electromagnetic shield cover is attached to the ground pattern,
The first internal through-hole is provided inside the first multilayer resin substrate, and the first input RF signal through-hole connected to the input RF line and the interior of the first multilayer resin substrate A first gate control signal through-hole connected to the gate bias supply line, and a first output connected to the output RF line provided in the first multilayer resin substrate. An RF signal through hole, provided in the first multilayer resin substrate, provided in the first multilayer resin substrate, the first drain signal through hole connected to the drain bias supply line, and the second multilayer resin substrate. A second input RF signal through hole connected to the first input RF signal through hole, and the second multi-layer resin substrate. A second gate control signal through hole connected to the signal through hole, and a second output RF signal through hole provided in the second multilayer resin substrate and connected to the first output RF signal through hole. A second drain signal through hole connected to the first drain signal through hole provided in the second multilayer resin substrate,
The second internal through hole includes the first input RF signal through hole, the first gate control signal through hole, the first output RF signal through hole, and the first multilayer resin substrate. A first ground through hole provided at a position outside the position where the first drain signal through hole is provided and connected to the ground pattern, and inside the second multilayer resin substrate Positions outside the positions where the second input RF signal through hole, the second gate control signal through hole, the second output RF signal through hole, and the second drain signal through hole are provided. And a second ground through hole connected to the first ground through hole. The microwave device according to claim 1. A metal plate provided on the upper surface of the first multilayer resin substrate;
A first heat radiation embedded member connected to the metal plate, provided in the first multilayer resin substrate;
Provided inside the second multilayer resin substrate, further comprising a first heat radiation embedded member and a second heat radiation embedded member connected to the housing;
The microwave device according to claim 1, wherein the microwave circuit is provided on an upper surface of the metal plate. A gate bias circuit provided in the gate bias supply line and including a first chip capacitor that is short-circuited at an RF drive frequency and a chip resistor for oscillation suppression;
The microwave device according to claim 2, further comprising: a drain bias circuit that is provided on the drain bias supply line and includes a second chip capacitor that is short-circuited at an RF driving frequency.   5. The microwave device according to claim 1, further comprising an RF signal suppression filter provided on an upper surface or inside of the first multilayer resin substrate.   The microwave device according to any one of claims 1 to 5, wherein the first multilayer resin substrate and the second multilayer resin substrate are the same type of resin substrate.

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