JP4475582B2 - Multilayer high frequency circuit - Google Patents

Multilayer high frequency circuit Download PDF

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Publication number
JP4475582B2
JP4475582B2 JP2005048735A JP2005048735A JP4475582B2 JP 4475582 B2 JP4475582 B2 JP 4475582B2 JP 2005048735 A JP2005048735 A JP 2005048735A JP 2005048735 A JP2005048735 A JP 2005048735A JP 4475582 B2 JP4475582 B2 JP 4475582B2
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dielectric substrate
ground conductor
multilayer dielectric
high
conductor
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JP2006237967A (en
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英征 大橋
健 湯浅
志浩 田原
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三菱電機株式会社
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Description

  The present invention relates to a multilayer high-frequency circuit mainly used in the microwave and millimeter wave bands.

  Conventionally, as a method of mounting a high-frequency high-power IC, a method of mounting an IC on a heat-dissipating metal carrier has been used to efficiently dissipate heat generated in the IC (see, for example, Patent Document 1). ).

JP 2003-332811 A (FIGS. 1 and 2)

  However, in a high frequency circuit having a heat dissipation structure using a metal carrier, a groove is formed between the input / output circuit board connected to the high frequency signal input / output terminal of the high frequency IC and the metal carrier, and is formed in the inner layer of the input / output circuit board. There is a problem that coupling between the input and output of the IC is caused by an unnecessary mode propagating through a groove formed by the ground conductor and the metal carrier.

  The present invention has been made to solve the above-described problems. A multilayer high-frequency circuit capable of suppressing the coupling between the input and output of a high-frequency IC by a simple manufacturing method and improving the performance of the high-frequency circuit. The purpose is to obtain.

Multilayer high-frequency circuit according to the present invention includes a multilayer dielectric substrate, wherein a surface or et portion dug penetrating to the bottom layer of the multilayer dielectric substrate, a first ground conductor provided on the back surface of the multilayer dielectric substrate A metal carrier disposed on the first ground conductor, a high frequency IC chip mounted on the metal carrier, a strip conductor formed on the surface of the multilayer dielectric substrate, and the multilayer dielectric substrate. A second ground conductor formed in an inner layer, a metal pattern formed on a side surface of the digging portion and electrically connecting the first ground conductor and the second ground conductor, and the high frequency IC chip In a multilayer high-frequency circuit comprising a connection means for electrically connecting a high-frequency signal input / output terminal and the strip conductor, a part of the second ground conductor and the metal carrier Characterized in that the connection means for electrically connecting the part were arranged hollow.

Further, a multilayer dielectric substrate, wherein a surface or et portion dug penetrating to the bottom layer of the multilayer dielectric substrate, a first ground conductor provided on a back surface of the multilayer dielectric substrate, said first ground A metal carrier disposed on the conductor, a high-frequency IC chip mounted on the metal carrier, a strip conductor formed on the surface of the multilayer dielectric substrate, and a second formed on an inner layer of the multilayer dielectric substrate. A ground conductor, a columnar conductor formed in the multilayer dielectric substrate and electrically connecting the first ground conductor and the second ground conductor, a high-frequency signal input / output terminal of the high-frequency IC chip, and the In a multilayer high-frequency circuit including a connection means for electrically connecting a strip conductor, a connection for electrically connecting a part of the second ground conductor and a part of the metal carrier Characterized in that a stepped hollow.

Further, a multilayer dielectric substrate, wherein a surface or et portion dug penetrating to the bottom layer of the multilayer dielectric substrate, a first ground conductor provided on a back surface of the multilayer dielectric substrate, said first ground A metal carrier disposed on the conductor, a high-frequency IC chip mounted on the metal carrier, a strip conductor formed on the surface of the multilayer dielectric substrate, and a second formed on an inner layer of the multilayer dielectric substrate. A ground conductor, a columnar conductor formed in the multilayer dielectric substrate and electrically connecting the first ground conductor and the second ground conductor, a high-frequency signal input / output terminal of the high-frequency IC chip, and the A multilayer high-frequency circuit comprising a connection means for electrically connecting a strip conductor, wherein the columnar conductor is adjacent to at least the metal carrier side and the first ground conductor. And having a first and a columnar conductor in contact, and the second of the second columnar conductor ground intervening conductor side contact resistor material connected with the first columnar conductor.

Further, a multilayer dielectric substrate, wherein a surface or et portion dug penetrating to the bottom layer of the multilayer dielectric substrate, a first ground conductor provided on a back surface of the multilayer dielectric substrate, said first ground A metal carrier disposed on the conductor, a high-frequency IC chip mounted on the metal carrier, a strip conductor formed on the surface of the multilayer dielectric substrate, and a second formed on an inner layer of the multilayer dielectric substrate. A ground conductor, a columnar conductor formed in the multilayer dielectric substrate and electrically connecting the first ground conductor and the second ground conductor, a high-frequency signal input / output terminal of the high-frequency IC chip, and the In a multilayer high-frequency circuit comprising a connection means for electrically connecting a strip conductor, the inner layer of the multilayer dielectric substrate, adjacent to the metal carrier and the metal carrier The region between the columnar conductor that is characterized by Loaded wave absorber material.

  According to the present invention, it is possible to avoid the deterioration of the performance of the high-frequency IC chip to be mounted by reducing the mode of propagation through the groove formed between the heat-dissipating metal carrier and the conductor of the multilayer dielectric substrate, and the high-frequency IC chip with a simple manufacturing method. The coupling between the input and output of the IC can be suppressed to improve the performance of the high frequency circuit.

Embodiment 1 FIG.
1A and 1B are diagrams showing the structure of a multilayer high-frequency circuit according to Embodiment 1 of the present invention, in which FIG. 1A is a top view, FIG. 1B is a cross-sectional view taken along line AA ′ in FIG. c) is a sectional view taken along line BB ′ in FIG.

  In the multilayer high-frequency circuit shown in FIG. 1, a multilayer dielectric substrate 3 provided with a dig is provided on a chassis metal plate 8, and a heat dissipating metal carrier 2 is disposed in the digging portion. In this configuration, an MMIC (Monolithic Microwave Integrated Circuit) 1 is mounted. A strip conductor 5 is provided on the surface of the multilayer dielectric substrate 3, and the ground conductor 6 formed in the inner layer and the strip conductor 5 on the surface constitute a microstrip line. The inner wall of the digging portion is metallized with a metal pattern 10, and the inner ground conductor 6 is electrically connected to the chassis metal plate 8 through the metal pattern 10. The microstrip line is connected to a high-frequency signal input / output terminal in the MMIC 1 by a wire 9. In FIG. 1, a ribbon 4 that electrically connects the ground conductor 6 partially exposed on the surface and the metal carrier 2 is provided.

  Here, the connection between the MMIC 1 and the strip conductor 5 is connected by one wire 9, but a plurality of wires may be used, and a ribbon may be used instead of the wire. In the example of FIG. 1, only the signal line of the high frequency signal is connected by a wire, but a conductor pattern connected to the inner layer ground conductor by a via hole or the like is formed on the surface of the multilayer dielectric substrate 3, and the ground on the MMIC surface is formed. You may employ | adopt GSG (Ground Signal Ground) connection connected with a pad.

  Further, in FIG. 1, the ribbon 4 is used as a connection means for electrically connecting the ground conductor 6 and the metal carrier 2, but the ribbon may be replaced by a flat plate as long as electrical continuity is obtained. Moreover, you may substitute a ribbon for a wire.

  In the MMIC mounting method as shown in FIG. 1, since the MMIC 1 can be directly disposed on the metal carrier 2 for heat dissipation, efficient heat dissipation can be performed when using an element that generates a relatively large amount of heat, such as a power amplifier. .

  However, from the viewpoint of high-frequency signal transmission characteristics, it is desirable that the bonding position of the signal connection wire 9 is as low as possible. Therefore, the height position of the surface of the multilayer dielectric substrate 3 and the height position of the surface of the MMIC 1 Are desirably equal. For this reason, when adopting the mounting method as described above, it is necessary to set the height of the metal carrier 2 for heat dissipation to a height corresponding to the thickness of the multilayer substrate. As a result, the metal carrier 2 for heat dissipation, the chassis metal The depth of the U-shaped groove formed by the plate 8 and the metal pattern 10 is increased.

  Generally, in the wire portion connecting the strip conductor 5 and the MMIC 1 as shown in FIG. 1, discontinuity of the high-frequency signal occurs, and therefore, the radiated electromagnetic field is relatively large in the vicinity of the wire 9. When a part of the radiated electromagnetic field generated in the vicinity of the wire 9 leaks into the U-shaped groove, it propagates around the metal carrier 2 for heat dissipation and causes electromagnetic coupling to the other wire. As a result, the isolation between the input / output terminals of the MMIC 1 deteriorates. For example, in the amplifier MMIC, there is a problem that input / output feedback occurs and the unstable operation of the MMIC 1 occurs. In addition, at a certain fixed frequency, there is a problem that the coupling between the input and output increases as the depth of the U-shaped groove increases.

  In the multilayer high-frequency circuit structure shown in FIG. 1, the ground conductor 6, the inner wall metal pattern 10, and the heat-dissipating metal carrier 2 are hollow in the upper part of the U-shaped groove that is a path through which the electromagnetic field leaking from the vicinity of the wire 9 propagates. By using the ribbon 4 to be conducted, the cross-sectional shape of the groove is made a closed curve as shown in FIG.

  The propagation mode that propagates through the groove has a cut-off frequency related to the depth of the groove, and when the cross-sectional shape of the groove becomes a closed curve with respect to the fixed groove depth, the U-shape is open at the top. The cut-off frequency is higher than that of the shape. For this reason, there is an effect of reducing the coupling between the input and output of the MMIC 1 by using the connecting means such as the ribbon 4. The connecting means such as the ribbon 4 can be easily realized by using, for example, a ribbon bonder.

  As described above, according to the first embodiment, by using the multilayer high-frequency circuit structure as shown in FIG. 1, the mode for propagating the groove portion generated between the heat-dissipating metal carrier 2 and the conductor of the multilayer dielectric substrate 3 is achieved. Since this can be reduced, it is possible to avoid a decrease in performance of the high-frequency IC to be mounted.

Embodiment 2. FIG.
2A and 2B are diagrams showing the structure of a multilayer high-frequency circuit according to Embodiment 2 of the present invention, in which FIG. 2A is a top view, FIG. 2B is a cross-sectional view taken along line AA ′ in FIG. c) is a sectional view taken along line BB ′ in FIG.

  In the multilayer high-frequency circuit shown in FIG. 2, a multilayer dielectric substrate 3 provided with a dig is provided on a chassis metal plate 8, and a heat dissipating metal carrier 2 is disposed in the digging portion. In this configuration, MMIC1 is mounted. A strip conductor 5 is provided on the surface of the multilayer dielectric substrate 3, and the ground conductor 6 formed in the inner layer and the strip conductor 5 on the surface constitute a microstrip line. The inner-layer ground conductor 6 is electrically connected to the chassis metal plate 8 by a via hole 7 formed inside the multilayer dielectric substrate 3 and formed of a hollow columnar conductor. The microstrip line is connected to a high-frequency signal input / output terminal in the MMIC 1 by a wire 9. In FIG. 2, a ribbon 4 that electrically connects the ground conductor 6 partially exposed on the surface and the metal carrier 2 is provided.

  In the multilayer high-frequency circuit shown in FIG. 2, the connection between the MMIC 1 and the strip conductor 5 is connected by one wire 9 as in the first embodiment, but a plurality of wires may be used. A ribbon may be used instead of. In the example of FIG. 1, only the signal line of the high frequency signal is connected by a wire, but a conductor pattern connected to the inner layer ground conductor by a via hole or the like is formed on the surface of the multilayer dielectric substrate 3, and the ground on the MMIC surface is formed. You may employ | adopt GSG (Ground Signal Ground) connection connected with a pad. Further, a ribbon is used as means for electrically connecting the ground conductor 6 and the metal carrier 2, but the ribbon may be replaced by a flat plate or a ribbon may be replaced by a wire as long as electrical continuity is obtained. You may do it.

  In the second embodiment, there is no metal pattern 10 on the inner wall shown in the first embodiment, and electrical connection between the inner layer ground conductor 6 and the chassis metal plate 8 is made by the via hole 7. For this reason, the metallization of an inner wall is unnecessary among the manufacturing processes of the multilayer dielectric substrate 3, and a process is simplified.

  In the first embodiment, the U-shaped groove serving as a path through which the electromagnetic field generated in the vicinity of the wire 9 propagates is formed by the metal carrier for heat dissipation 2, the chassis metal plate 8, and the metal pattern 10 on the inner wall. In the second embodiment shown in FIG. 2, a groove formed by the heat dissipating metal carrier 2, the chassis metal plate 8, the via hole 7 in the inner layer of the multilayer dielectric substrate 3 and the inner ground conductor 6 serves as a propagation path.

  In the multilayer high-frequency circuit structure shown in FIG. 2, a ribbon 4 that connects the ground conductor 6 and the heat-dissipating metal carrier 2 in a hollow manner is provided in the upper open portion of the groove, which is a path through which the electromagnetic field leaking from the vicinity of the wire 9 propagates. By using it, the cross-sectional shape of the groove is made a closed curve as shown in FIG. For this reason, the cut-off frequency of the mode propagating through the groove can be increased, and the use of connection means such as the ribbon 4 has an effect of reducing the coupling between the input and output of the MMIC 1.

  As described above, according to the second embodiment, by using the multilayer high-frequency circuit structure as shown in FIG. 2, the mode for propagating the groove formed between the heat-dissipating metal carrier 2 and the conductor of the multilayer dielectric substrate 3 is set. Since this can be reduced, it is possible to avoid a decrease in performance of the high-frequency IC to be mounted.

Embodiment 3 FIG.
3A and 3B are diagrams showing the structure of a multilayer high-frequency circuit according to Embodiment 3 of the present invention, in which FIG. 3A is a top view, FIG. 3B is a cross-sectional view taken along line AA ′ in FIG. c) is a sectional view taken along line BB ′ in FIG.

  In the multilayer high-frequency circuit shown in FIG. 3, a multilayer dielectric substrate 3 provided with a dig is provided on a chassis metal plate 8, a heat dissipating metal carrier 2 is disposed in the dig, and the metal carrier 2 is disposed on the metal carrier 2. In this configuration, the MMIC 1 is mounted. A strip conductor 5 is provided on the surface of the multilayer dielectric substrate 3, and the ground conductor 6 formed in the inner layer and the strip conductor 5 on the surface constitute a microstrip line. The inner-layer ground conductor 6 is electrically connected to the chassis metal plate 8 through a via hole 7 or via holes 7a and 7b and a sheet resistor 11 formed inside the multilayer dielectric substrate 3 and formed of a hollow columnar conductor. The microstrip line is connected to a high-frequency signal input / output terminal in the MMIC 1 by a wire 9.

  Here, the via hole 7a is composed of a hollow first columnar conductor, is adjacent to the metal carrier 2 side and is in contact with the chassis metal plate 8 side, and the via hole 7b is composed of a hollow second columnar conductor, It is connected to the via hole 7a through a sheet resistor 11 made of a resistor material in contact with the conductor 6 side.

  In the third embodiment shown in FIG. 3, as in the first and second embodiments, the connection between the MMIC 1 and the strip conductor 5 is connected by one wire 9, but a plurality of wires are used. A ribbon may be used instead of a wire. In the example of FIG. 1, only the signal line of the high frequency signal is connected by a wire, but a conductor pattern connected to the inner layer ground conductor by a via hole or the like is formed on the surface of the multilayer dielectric substrate 3, and the ground on the MMIC surface is formed. You may employ | adopt GSG (Ground Signal Ground) connection connected with a pad.

  The sheet resistor 11 disposed in the inner layer can be produced when the multilayer dielectric substrate is laminated. Further, the sheet resistor 11 may be replaced with a resistor paste.

  In the third embodiment shown in FIG. 3, the groove portion that is a path through which the electromagnetic field generated in the vicinity of the wire 9 propagates includes the heat-dissipating metal carrier 2, the chassis metal plate 8, the via holes 7 a and 7 b in the dielectric substrate inner layer, and the inner layer. This is a groove formed by the resistance sheet 11 and the inner-layer ground conductor 6 loaded on the substrate.

  When the above-described electromagnetic field propagates through the groove, current flows on the metal carrier 2 for heat dissipation, the chassis metal plate 8, the via holes 7a and 7b in the inner layer of the dielectric substrate, the resistor sheet 11 loaded on the inner layer, and the inner layer ground conductor 6. By loading the sheet resistance 11 that is a resistance component in the current path, the propagating electromagnetic field can be attenuated. As a result, an effect of reducing the coupling between the input and output of the MMIC 1 is obtained.

  As described above, according to the third embodiment, by using the multilayer high-frequency circuit structure as shown in FIG. 3, the mode for propagating the groove portion generated between the heat radiating metal carrier 2 and the conductor of the multilayer dielectric substrate 3 can be achieved. Since this can be reduced, it is possible to avoid a decrease in performance of the high-frequency IC to be mounted.

Embodiment 4 FIG.
4A and 4B are diagrams showing the structure of a multilayer high-frequency circuit according to Embodiment 4 of the present invention, where FIG. 4A is a top view, FIG. 4B is a cross-sectional view taken along line AA ′ in FIG. c) is a sectional view taken along line BB ′ in FIG.

  In the multilayer high-frequency circuit shown in FIG. 4, a multilayer dielectric substrate 3 provided with a dig is provided on a chassis metal plate 8, a heat dissipating metal carrier 2 is disposed in the dig, and the metal carrier 2 is disposed on the metal carrier 2. In this configuration, the MMIC 1 is mounted. A strip conductor 5 is provided on the surface of the multilayer dielectric substrate 3, and the ground conductor 6 formed in the inner layer and the strip conductor 5 on the surface constitute a microstrip line. The inner layer ground conductor 6 is electrically connected to the chassis metal plate 8 via the via hole 7, and the radio wave absorber 12 is loaded on the inner layer of the multilayer dielectric substrate 3 in a region sandwiched between the via hole 7 and the metal carrier 2. is doing. The microstrip line is connected to a high-frequency signal input / output terminal in the MMIC 1 by a wire 9.

  In the fourth embodiment shown in FIG. 4, as in the first, second and third embodiments, the connection between the MMIC 1 and the strip conductor 5 is connected by one wire 9, but a plurality of wires are connected. It may be used, and a ribbon may be used instead of a wire. In the example of FIG. 1, only the signal line of the high frequency signal is connected by a wire, but a conductor pattern connected to the inner layer ground conductor by a via hole or the like is formed on the surface of the multilayer dielectric substrate 3, and the ground pad on the surface of the MMIC is formed. A GSG (Ground Signal Ground) connection may be employed.

  The radio wave absorber 12 arranged in the inner layer can be produced when the multilayer dielectric substrate is laminated. In addition, a sheet-like radio wave absorber may be used as the radio wave absorber, or a paste-like radio wave absorber may be used.

  In FIG. 4, as in the second embodiment, the groove portion serving as a path through which the electromagnetic field generated in the vicinity of the wire 9 is propagated includes the heat radiating metal carrier 2, the chassis metal plate 8, the via hole 7 in the inner layer of the dielectric substrate, and the inner layer. It is formed by the ground conductor 6.

  That is, since the electromagnetic field concentrates in the groove and propagation occurs, the electromagnetic field propagating through the groove can be absorbed by adopting the structure of FIG. 4 in which the radio wave absorber 12 is disposed inside the groove. . As a result, an effect of reducing the coupling between the input and output of the MMIC 1 is obtained.

  As described above, according to the fourth embodiment, by using the multilayer high-frequency circuit structure as shown in FIG. 4, the mode for propagating the groove formed between the conductors of the heat dissipating metal carrier 2 and the multilayer dielectric substrate 3 is set. Since this can be reduced, it is possible to avoid a decrease in performance of the high-frequency IC to be mounted.

It is a figure which shows the structure of the multilayer high frequency circuit which concerns on Embodiment 1 of this invention. It is a figure which shows the structure of the multilayer high frequency circuit which concerns on Embodiment 2 of this invention. It is a figure which shows the structure of the multilayer high frequency circuit which concerns on Embodiment 3 of this invention. It is a figure which shows the structure of the multilayer high frequency circuit which concerns on Embodiment 4 of this invention.

Explanation of symbols

  1 MMIC, 2 metal carrier, 3 multilayer dielectric substrate, 4 ribbon, 5 strip conductor, 6 ground conductor, 7 via hole, 7a, 7b via hole, 8 chassis metal plate, 9 wire, 10 metal pattern, 11 sheet resistance, 12 radio wave Absorber.

Claims (4)

  1. A multilayer dielectric substrate;
    A portion dug penetrating to the surface or et lowermost of said multilayer dielectric substrate,
    A first ground conductor provided on the back surface of the multilayer dielectric substrate ;
    A metal carrier disposed on the first ground conductor;
    A high frequency IC chip mounted on the metal carrier;
    A strip conductor formed on the surface of the multilayer dielectric substrate;
    A second ground conductor formed in the inner layer of the multilayer dielectric substrate;
    A metal pattern formed on a side surface of the digging portion to electrically connect the first ground conductor and the second ground conductor;
    In a multilayer high-frequency circuit comprising a high-frequency signal input / output terminal of the high-frequency IC chip and a connection means for electrically connecting the strip conductor,
    A multilayer high-frequency circuit, characterized in that connection means for electrically connecting a part of the second ground conductor and a part of the metal carrier is disposed in a hollow space.
  2. A multilayer dielectric substrate;
    A portion dug penetrating to the surface or et lowermost of said multilayer dielectric substrate,
    A first ground conductor provided on the back surface of the multilayer dielectric substrate ;
    A metal carrier disposed on the first ground conductor;
    A high frequency IC chip mounted on the metal carrier;
    A strip conductor formed on the surface of the multilayer dielectric substrate;
    A second ground conductor formed in the inner layer of the multilayer dielectric substrate;
    A columnar conductor formed inside the multilayer dielectric substrate to electrically connect the first ground conductor and the second ground conductor;
    In a multilayer high-frequency circuit comprising a high-frequency signal input / output terminal of the high-frequency IC chip and a connection means for electrically connecting the strip conductor,
    A multilayer high-frequency circuit, characterized in that connection means for electrically connecting a part of the second ground conductor and a part of the metal carrier is disposed in a hollow space.
  3. A multilayer dielectric substrate;
    A portion dug penetrating to the surface or et lowermost of said multilayer dielectric substrate,
    A first ground conductor provided on the back surface of the multilayer dielectric substrate ;
    A metal carrier disposed on the first ground conductor;
    A high frequency IC chip mounted on the metal carrier;
    A strip conductor formed on the surface of the multilayer dielectric substrate;
    A second ground conductor formed in the inner layer of the multilayer dielectric substrate;
    A columnar conductor formed inside the multilayer dielectric substrate to electrically connect the first ground conductor and the second ground conductor;
    In a multilayer high-frequency circuit comprising a high-frequency signal input / output terminal of the high-frequency IC chip and a connection means for electrically connecting the strip conductor,
    The columnar conductor includes at least the first columnar conductor adjacent to the metal carrier side and in contact with the first ground conductor side, and the first ground conductor side in contact with the second ground conductor side through the resistor material. And a second columnar conductor connected to the columnar conductor.
  4. A multilayer dielectric substrate;
    A portion dug penetrating to the surface or et lowermost of said multilayer dielectric substrate,
    A first ground conductor provided on the back surface of the multilayer dielectric substrate ;
    A metal carrier disposed on the first ground conductor;
    A high frequency IC chip mounted on the metal carrier;
    A strip conductor formed on the surface of the multilayer dielectric substrate;
    A second ground conductor formed in the inner layer of the multilayer dielectric substrate;
    A columnar conductor formed inside the multilayer dielectric substrate to electrically connect the first ground conductor and the second ground conductor;
    In a multilayer high-frequency circuit comprising a high-frequency signal input / output terminal of the high-frequency IC chip and a connection means for electrically connecting the strip conductor,
    A multilayer high-frequency circuit, wherein a radio wave absorber material is loaded in an inner layer of the multilayer dielectric substrate and between the metal carrier and a columnar conductor adjacent to the metal carrier.
JP2005048735A 2005-02-24 2005-02-24 Multilayer high frequency circuit Expired - Fee Related JP4475582B2 (en)

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KR20150075347A (en) 2013-12-25 2015-07-03 가부시끼가이샤 도시바 Semiconductor package, semiconductor module and semiconductor device
JP2015126025A (en) * 2013-12-25 2015-07-06 株式会社東芝 Semiconductor package
JP5959497B2 (en) * 2013-12-25 2016-08-02 株式会社東芝 Semiconductor package
JP2015149650A (en) 2014-02-07 2015-08-20 株式会社東芝 Millimeter waveband semiconductor package and millimeter waveband semiconductor device
JP2015149649A (en) 2014-02-07 2015-08-20 株式会社東芝 Millimeter waveband semiconductor package and millimeter waveband semiconductor device

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