JP2016164940A - Dicing film and manufacturing method of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a dicing film capable of excellently peeling semiconductor chips that are pasted to an adhesive layer and made to be individual pieces.SOLUTION: The dicing film includes: an adhesive layer 3, to which a semiconductor wafer W is pasted; a substrate film 2, on which the adhesive layer 3 is formed on one surface; and recess parts 4, formed at a plurality of positions on the other surface on the opposite side of the one surface of the substrate film 2, of a size crushed by negative pressure.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a dicing film and a method for manufacturing a semiconductor device.

  In the manufacturing process of a semiconductor device, a semiconductor integrated circuit is formed repeatedly in the vertical and horizontal directions of the semiconductor wafer, and then the semiconductor wafer is attached to a dicing film and cut into pieces by, for example, a dicing saw to form a chip-like semiconductor device. It has a process. Usually, the dicing film has a two-layer structure of a base material and an adhesive layer. The chip-shaped semiconductor device thus obtained is lifted from the icing film by a collet, moved, and laminated, molded, mounted on a substrate, and the like.

  As a method of lifting the chip-shaped semiconductor device from the dicing film, for example, a needle pick-up method is employed. The needle pickup method is a method in which a surface of the dicing film opposite to the surface to which the semiconductor device is attached is pushed up and deformed by a needle or the like, and the chip-like semiconductor device is peeled off from the dicing film. In this case, an apparatus having a structure in which vacuum adsorption is performed from the side where the dicing film is pushed up is used.

  In addition, after cutting a predetermined depth from the main surface of the semiconductor wafer, the back surface of the semiconductor wafer is ground and polished with the main surface attached to the first adhesive tape, and then the semiconductor is formed on the second adhesive tape. It is known to divide wafers. According to this method, the second adhesive tape may shrink depending on the characteristics of the material. Therefore, the chip separated after the backside polishing is displaced from a predetermined position, and the distance and angle between the chips are not displaced. And chip pick-up may not be possible. The following structure is known as a tape for solving such inconvenience.

  The structure is formed by forming two or more grooves on the other surface of the base material provided with an adhesive layer on one surface, and the depth of the groove is 20% of the maximum thickness of the base material. ˜70%, groove width is 50 μm or less, thereby suppressing tape shrinkage.

  In addition to the method of mechanically cutting the semiconductor wafer using a dicing saw, there is a method of thermally cutting by laser irradiation. In the method performed by laser irradiation, a phenomenon in which the base film of the dicing film and the processing table are firmly attached tends to occur. In order to prevent such a phenomenon, it is known to provide a contact reducing layer having irregularities on the back surface of the base film. The contact reduction layer is processed so as to be unevenness having a depth of 1 μm to 10 μm and an arithmetic average roughness Ra of 1.0 μm or more.

JP 2013-105834 A JP 2013-098290 A JP 2008-091765 A

  By the way, in order to reduce the size and increase the functionality of electronic devices, research and development of three-dimensional mounting semiconductor technology for mounting a chip-shaped semiconductor device in three dimensions has progressed, and through silicon vias (TSV: through suitable for three-dimensional mounting). -silicon via) is used. The TSV has a structure in which high integration can be realized by stacking by electrically connecting the circuits on the front and back surfaces with vias penetrating the silicon chip and joining the semiconductor devices with micro bumps or the like.

  In this case, since it is difficult to form the TSV deeply, for example, after forming the TSV shallow from the circuit surface of the semiconductor wafer to the opposite surface, the opposite surface is thinned by physical polishing, cutting, or the like. A process for exposing the TSV is performed.

  The polished surface of the thinned semiconductor wafer is attached to a dicing film, for example. The adhesive layer on the surface of the dicing film needs to have high adhesive strength in order to prevent chipping of the wafer during dicing. Further, in order to enable the chip-shaped semiconductor device to be peeled after dicing, the adhesive layer is generally a UV peeling type having a function of reducing the adhesiveness by UV irradiation.

  If the chip-like semiconductor device attached to the dicing film is thinned by cutting, polishing, etc., the rigidity and the bending strength are reduced. Therefore, the chip-like semiconductor device is deformed by the pushing up of the pin into the shape of the dicing film. Will follow and become difficult to peel off. For this reason, stress exceeding the bending strength is applied to the semiconductor device, and the thin semiconductor device may be broken. The dicing film has reduced adhesion strength with the chip-like semiconductor device due to UV irradiation, but since the rigidity of the semiconductor device thinned further is large, it may be difficult to peel off.

  In addition, as described above, a groove having a width of 50 μm or less is formed on the back surface side of the base film to suppress expansion and contraction of the dicing film, or even if the adhesion strength with the processing table is reduced, it is divided by dicing. It is difficult to reduce the contact area between the semiconductor device and the dicing film. Therefore, the above structure does not solve the problem of favorably peeling the thinned chip-shaped semiconductor device from the dicing film.

  The objective of this invention is providing the manufacturing method of the dicing film and semiconductor device which can peel favorably the semiconductor chip affixed on the adhesion layer and separated into pieces.

According to one aspect of the present embodiment, the adhesive layer to which the semiconductor wafer is attached, the base film on which the previous adhesive layer is formed, and the other surface opposite to the one surface of the base film There is provided a dicing film having a recess formed at a plurality of positions and crushed by a negative pressure.
The objects and advantages of the invention will be realized and attained by means of the elements and combinations particularly pointed out in the appended claims. It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention.

  According to this embodiment, the semiconductor chip stuck to the adhesion layer and separated into pieces can be favorably peeled off.

FIG. 1 is a plan view showing a dicing film used in the method for manufacturing a semiconductor device according to the embodiment. FIG. 2 is a cross-sectional view showing a dicing film and a pickup device used in the method for manufacturing a semiconductor device according to the embodiment. 3A and 3B are a plan view and a cross-sectional view showing a dicing film used in the method of manufacturing a semiconductor device according to the embodiment and a chip-shaped semiconductor device after dicing. 4A to 4C are cross-sectional views illustrating a method of peeling a semiconductor device diced in the manufacturing process of the semiconductor device according to the embodiment from a dicing film. FIGS. 5A and 5B are cross-sectional views illustrating a method of peeling a semiconductor device diced in the manufacturing process of the semiconductor device according to the embodiment from a dicing film. FIG. 6 is a cross-sectional view illustrating a method of peeling a semiconductor device diced in a manufacturing process of a semiconductor device according to a comparative example from a dicing film. 7A and 7B are a plan view and a cross-sectional view illustrating another example of a dicing film used in the method for manufacturing a semiconductor device according to the embodiment and a semiconductor chip attached thereto. FIGS. 8A to 8C show first to third modified examples of unevenness formed on a base film of a dicing film used in the method for manufacturing a semiconductor device according to the embodiment. It is a top view. FIGS. 9A and 9B show fourth and fifth modified examples of unevenness formed on the base film of a dicing film used in the method for manufacturing a semiconductor device according to the embodiment. It is a top view.

  Embodiments will be described below with reference to the drawings. In the drawings, similar components are given the same reference numerals.

  FIG. 1 is a plan view illustrating an example of a dicing film used in the method for manufacturing a semiconductor device according to the embodiment and a semiconductor wafer attached thereon, and FIG. 2 illustrates the method for manufacturing the semiconductor device according to the embodiment. It is sectional drawing which shows the dicing film and pick-up apparatus which are used. 3A is an enlarged plan view of a region I surrounded by a one-dot chain line in FIG. 1, and FIG. 3B is an enlarged sectional view taken along line II-II in FIG.

  A dicing film 1 shown in FIGS. 1, 2, and 3 has a two-layer structure in which an adhesive layer 3 is formed on a first surface 2 a of a base film 2. The surface of the adhesive layer 3 opposite to the adhesive surface with the base film 2 is covered with, for example, a polyethylene terephthalate (PET) protective film (not shown) when not in use, and exposed when in use.

  The base film 2 is a film formed from a resin material such as polyvinyl chloride (PVC), polyolefin, polyester, or PET. The first surface 2a of the base film 2 in a flatly stretched state is a flat surface, and the second surface 2b is a concavo-convex surface in which a plurality of planar circular recesses 4 are formed along the surface at substantially equal intervals. ing. The flat surface of the convex part surrounding the recessed part 4 among the 2nd surface 2b is formed in the base film 2 on the conditions of a number and an area | region so that it may become 70% or less per unit area.

  The plurality of recesses 4 are formed on the base film 2 by, for example, a heat press using a mold. The plurality of recesses 4 are provided at the number and position where they can overlap with the dicing line L of the semiconductor wafer W to be pasted on the adhesive layer 3 with as large an area as possible, and are further provided in a region surrounded by the dicing line L. It is preferable. Moreover, it is preferable that the plurality of recesses 4 have a width that can straddle the semiconductor integrated circuit regions S on both sides of the dicing line L in the semiconductor wafer W. As will be described later, the concave portion 4 is crushed by the negative pressure applied from the tip of the suction cylinder 13 disposed in the space on the second surface 2b side. As a result, the thin layer portion 2c above the concave portion 4 is in the concave portion 4 It has a size and thickness that is pulled into and deforms to become a depression.

  For the adhesive layer 3, a radiation curable adhesive, for example, an ultraviolet curable adhesive is used. Examples of the radiation curable pressure-sensitive adhesive composition include a blend type containing a radiation curable compound in a crosslinked acrylic polymer, and a radiation curable polymer type in which the crosslinked acrylic polymer itself has a radiation curable functional group. There is.

  The dicing film 1 having such a structure is stretched, for example, on an annular carrier ring 5 as shown in FIGS. Specifically, the dicing film 1 in a rolled state is stretched, and the adhesive layer 3 is attached to one surface of the carrier ring 5 and attached. The carrier ring 5 is made of a highly rigid material such as stainless steel, and has an inner diameter larger than that of the semiconductor wafer W to be diced.

  The semiconductor wafer W has a semiconductor integrated circuit S that is cut along a dicing line L with a dicing saw (not shown), for example, on the dicing film 1 so as to expose the surface on which the plurality of semiconductor integrated circuits S are formed. Divided into a plurality of semiconductor chips C. The dicing of the semiconductor wafer W is performed, for example, by placing the dicing film 1 stretched on the carrier ring 5 on a dicing table (not shown). The dicing may be performed by laser irradiation or the like.

  1, FIG. 2 and FIG. 3 show a state in which a semiconductor wafer W diced on the adhesive layer 3 of the dicing film 1, that is, a plurality of semiconductor chips C are attached. In such a state, the side portion of the carrier ring 5 is sandwiched from both sides by the ring holder 11 of the pickup device 10 illustrated in FIGS. 1 and 2, and is fitted into the lateral groove 11 u of the ring holder 11 and fixed.

  A push-up unit 12 that pushes up one semiconductor chip C through the dicing film 1 is arranged in the first space where the base film 2 is exposed in the space divided by the carrier ring 5 and the dicing film 1. Yes. The push-up unit 12 has a suction cylinder 13 having an annular tip portion, for example, of a size that can enclose one semiconductor chip C, in which the needle holder 14 extends in the axial direction of the inner surface of the suction cylinder 13. It is slidably fitted. At the tip of the needle holder 14, the roots of a plurality of needles 15 that are arranged to extend in the sliding direction of the needle holder 14 are inserted at intervals. Further, a suction hole 14 a reaching the tip is formed in the needle holder 14.

  The operation of the push-up unit 12 is controlled by the push-up control unit 16. The push-up control unit 16 has, for example, an intake mechanism (not shown) that depressurizes the space at the tip of the suction cylinder 13 through the suction hole 14 a in the needle holder 14, and further, the tip of the suction cylinder 13 is moved to the dicing film 1. It has a moving mechanism that moves toward and away from the base film 2 or moves laterally. Further, the push-up control unit 16 includes a needle moving mechanism (not shown) that pushes up and down the needle 15 through the needle holder 14 in the suction cylinder 13 and a detector (not shown) that detects the position of the needle 15. Have. As shown in FIG. 4A, a suction stage 13a provided with a vent hole 13b for allowing the needle 15 to pass through or sucking it is provided at the tip of the suction cylinder 13.

  The collet 17 is movably disposed in the second space on the side where the adhesive layer 3 is exposed in the space divided by the carrier ring 5 and the dicing film 1. The operation of the collet 17 is controlled by the collet controller 18 so that the semiconductor chip C separated on the dicing film 1 is sucked and separated from the adhesive layer 3. The collet controller 18 includes a suction unit (not shown) connected to the collet 17 via the arm 19, a drive unit (not shown) that moves the arm 19 three-dimensionally, and a sensor that detects the position of the collet 17 ( (Not shown). The collet control unit 18 may be connected so as to match each other's operation by transmitting and receiving signals to the push-up control unit 16.

  Next, a method for picking up semiconductor chips C formed by dividing the semiconductor wafer W will be described with reference to FIGS. 3 and 4 are cross-sectional views taken along the line III-III shown in FIG.

  First, the semiconductor wafer W is affixed on the surface of the adhesive layer 3 of the dicing film 1 stretched on the carrier ring 5 as shown in FIGS. At that time, each of a plurality of dicing lines L provided vertically and horizontally on the semiconductor wafer W is overlapped at a plurality of locations on a part of the substantially center of the recess 4 of the base film 2 as shown in FIG. To the position.

  Thereafter, a blade of a dicing saw (not shown) is inserted along the dicing line L of the semiconductor wafer W, and the semiconductor wafer W is cut. Thereby, the semiconductor wafer W is divided and a plurality of semiconductor chips C are formed. When the semiconductor wafer W is divided by the dicing saw, a groove may be formed in the dicing line L so that the blade of the dicing saw does not reach the adhesive layer 3. In this case, after forming the groove, the semiconductor wafer W may be divided by applying a stress from the outside of the semiconductor wafer W to create a crack along the groove. A cut or a crack is generated between the semiconductor chips C formed by the division, and air can enter the dicing film 1 therefrom.

  Thereafter, the adhesive layer 3 is irradiated with, for example, ultraviolet rays through the base film 2 to cure the base film 2 and reduce its adhesive strength.

  Next, as shown in FIGS. 1 and 2, the carrier ring 5 is attached to the ring holder 11 of the pickup device 10. Furthermore, as shown in the enlarged view of FIG. 4A, the tip of the adsorption cylinder 11 is brought into contact with the base film 2 of the dicing film 1. In this case, the suction cylinder 11 is controlled by the push-up control unit 16 and is moved to a position where all of the selected ones of the plurality of semiconductor chips C located above it overlap the inside of the cylinder. Further, the suction cylinder 11 is aligned so that the vent hole 13b at the tip thereof is positioned at the peripheral edge of the semiconductor chip C.

  In that state, the dicing film 1 is adsorbed by applying a negative pressure that depressurizes the internal space at the tip of the adsorption cylinder 11 from the push-up controller 16 through the suction hole 14a in the needle holder 14. In this state, air can enter between the semiconductor chips C, and the adhesive strength of the adhesive layer 3 is reduced. Therefore, if the negative pressure is increased, the withstand voltage of the portion between the semiconductor chips C is increased. The lowered thin layer portion 2c of the base film 2 is deformed.

As a result, as shown in the portion surrounded by the alternate long and short dash line in FIG. 4B, the thin layer portion 2c of the base film 2 overlapping the edge of the semiconductor chip C is deformed by the suction from the suction cylinder 11, and the recess 4 Crush. At that time, on the thin layer portion 2c where the adhesive strength is reduced, air is likely to enter inward from the edge of the semiconductor chip C, and the adhesive strength of the adhesive layer 3 is reduced. The pressure-sensitive adhesive layer 3 is peeled off from the edge of C and deformed together with the thin layer portion 2c of the base film 2 to form a recess 2d. Thereby, the contact area of the semiconductor chip C and the adhesion layer 3 decreases. In addition, since the recess 2d that promotes peeling is formed not only in the periphery of the semiconductor chip C but also in the surface of the semiconductor chip C, the peelability of the semiconductor chip C and the adhesive layer 3 can be improved.

  Next, as shown in FIG. 4C, the needle holder 14 in the suction cylinder 13 of the push-up unit 12 is moved toward the semiconductor chip C to bring the needle 15 into contact with the dicing film 1 and push it up further. As a result, the dicing film 1 pushed up is deformed and the semiconductor chip C is lifted. At that time, air easily enters from a recess 12d formed between the thin layer portion 2c of the base film 2 and the semiconductor chip C, and the contact area between the adhesive layer 3 and the semiconductor chip C is reduced.

  The collet 17 is moved to a position where the semiconductor chip 1 is sandwiched between the suction cylinder 11 after or before the recess 4 of the base film 2 of the dicing film 1 is crushed as shown in FIG. The Thus, when the recess 2c is crushed by suction of the suction cylinder 11, or after the recess 2c is crushed, the semiconductor chip C is sucked and lifted by the collet 17 while the semiconductor chip C is pushed up by the needle 15.

  Therefore, as shown in FIGS. 4C and 5A, when the semiconductor chip C is sucked by the collet 17 while the semiconductor chip C is pushed up through the dicing film 1 by the needle 15, the semiconductor chip C is diced. It becomes easy to peel off from the film 1. That is, in the peripheral part of the semiconductor chip C, the recess 2c of the base film 2 of the dicing film C is crushed, and a dent 2d is generated in the thin layer part 2c and the adhesive layer 3 thereabove. Thus, gaps with the dicing film 1 are scattered. In addition, since the recess 2d that promotes peeling is formed not only in the periphery of the semiconductor chip C but also in the surface of the semiconductor chip C, the peelability of the semiconductor chip C and the adhesive layer 3 can be improved.

  As a result, the contact area between the semiconductor chip C and the dicing film 1 is narrowed and air can easily enter from there, and the peripheral edge of the semiconductor chip C gradually moves away from the adhesive layer 3 due to the suction force of the collet 17 and the pushing force of the needle 15. The dicing film 1 is deformed and curved around the semiconductor chip C. Further, when the force from the collet 17 and the needle 15 is further applied to the semiconductor chip C, the area peeled off from the dicing film 1 spreads from the periphery of the semiconductor chip C to the inside thereof, and the contact area between the semiconductor chip C and the dicing film 1 is reduced. The pickup power per unit area is increased.

  As a result, as shown in FIG. 5B, the semiconductor chip C attached to the adhesive layer 3 at the time of pick-up and separated into individual pieces can be satisfactorily peeled, and the peripheral edge of the semiconductor chip C is cracked. And cracks are less likely to occur.

  On the other hand, as shown in the comparative example of FIG. 6, when the dicing film 51 having a structure in which no recess is formed in the base film 52 is used, the entire one surface of the semiconductor chip C is adhered to the dicing film 51. Sticking to layer 53. And the device which reduces the adhesive force of the semiconductor chip C and the dicing film 51 is not made | formed. For this reason, compared with the present embodiment, the adhesive force of the adhesive layer 53 is often superior to the attractive force of the collet 17. As a result, when the semiconductor chip C is pushed up by the needle 15, the peripheral portion of the semiconductor chip C is curved and peeled off from the collet 17, while the peripheral portion is easily cracked or cracked due to the curvature.

  Therefore, as in the embodiment of the present application, at least a part of the peripheral portion of the semiconductor chip C is peeled off by deformation of the concave portion 4 of the dicing film 1, so that the peripheral portion of the semiconductor chip C is sucked by the collet 17 and the needle 15 is pushed up. Peeling easily spreads from the inside to the inside. Further, since the recess 2d that promotes peeling is formed not only in the peripheral portion of the semiconductor chip C but also in the surface of the semiconductor chip C, the peelability between the semiconductor chip C and the dicing film 1 can be improved.

  For example, in the base film 2, the recess 4 is formed with a diameter of about 2.5 mm, a pitch of the recess 4 of about 4 mm, and a depth of about 50 to 70 μm. Moreover, if the thickness of the base film 2 in a portion where the concave portion 4 is not formed is, for example, about 100 μm, the thin layer portion 2c of the base film 2 thinned by the formation of the concave portion 4 is 30 μm to 50 μm.

  After the semiconductor wafer W having a thickness of 50 μm is attached to the adhesive layer 3 having a thickness of 5 μm to 25 μm made of the ultraviolet curable resin of the dicing film 1 having such a structure, the dicing film 1 is diced into 20 mm × 20 mm planar squares and separated into individual pieces. Then, ultraviolet rays were irradiated. As a result, when the pickup device 10 shown in FIG. 2 was used, the edge of the semiconductor chip C was peeled off satisfactorily, and it was picked up by the collet 17 without cracks or cracks. In addition, the thickness of the base film 2 is good also as about 80 micrometers-200 micrometers, for example.

  On the other hand, the dicing film 51 of the comparative example shown in FIG. 6 having the base material 52 and the adhesive layer 53 of the same material with the same thickness is used, and the semiconductor wafer W is separated into pieces under the same conditions as shown in FIG. The semiconductor chip C was picked up by the pickup device 10 shown in FIG. As a result, even when the push-up amount of the semiconductor chip C by the needle 15 is 300 μm, the semiconductor chip C is not peeled off from the adhesive layer 53, and when the push-up amount is 600 μm, the edge of the semiconductor chip C may be cracked. .

  Incidentally, as described above, in the dicing film 1, the concave portion 4 is formed in the base film 2 having a single layer structure, and the thin layer portion 2c of the base film 2 is formed in that portion, as illustrated in FIG. Moreover, you may form the recessed part 4 in the base film 2 which consists of multiple layers.

  In FIG. 7, the base film 2 of the dicing film 1 has a two-layer structure in which a first film 21 and a second film 22 are stacked and bonded. The 2nd film 22 is affixed on the surface on the opposite side to the surface where the adhesion layer 3 is adhere | attached among the 1st films 21, and the planar circular opening 22a is formed in the 2nd film 22. FIG. Thereby, the opening part 22a of the 2nd film 22 corresponds to the recessed part 4 of the base film 2, and the part which overlaps the opening part 22a among the 1st films 21 becomes the thin layer part 2c of the base film 2. The first film 21 is formed of a material having a smaller elastic modulus than that of the second film 22, and has a thickness that is easily deformed by suction from the suction cylinder 13 to form the depression 2 d, as in FIG. Have.

  For example, PVC that is easily deformable is used as the material of the first film 21, and PET having a larger elastic modulus than that of the first film 21 is used as the material of the second film 22. The first film 21 and the second film 22 may be attached by heating or may be attached via an adhesive (not shown). Moreover, the thickness of the 1st film 21 was 20 micrometers, and the thickness of the 2nd film 22 was 50 micrometers, for example. Moreover, the opening part 22a of the 2nd film 22, ie, the recessed part 4, was formed in the column shape, The diameter was about 2.5 mm and the pitch was about 4 mm.

  After a semiconductor wafer W having a thickness of 50 μm is attached to the adhesive layer 3 made of an ultraviolet curable resin in the dicing film 1 having such a structure, the semiconductor chip C is formed by dicing into 20 mm × 20 mm planar squares to form individual chips. Then, the adhesive layer 3 was irradiated with ultraviolet light, and then the semiconductor chip C was pushed up by the needle 15 using the pickup device 10 shown in FIG. As a result, the peeling of the edge of the semiconductor chip C was good, and it could be picked up by the collet 17 without cracks or cracks.

  By the way, in said embodiment, although many recessed parts 4 formed in the dicing film 1 are formed in the same shape at intervals in the shape of an island in the shape of a hemisphere or a cylinder, the planar shape of the island-shaped recessed part 4 Is not limited to a circle. For example, as illustrated in FIG. 8A, a structure in which a plurality of hemispherical or cylindrical concave portions 41 and 42 having different radii are mixed may be used, or as illustrated in FIG. A structure in which a plurality of concave portions 43 having a triangular shape are arranged may be used, or a concave portion 44 having a hexagonal plane as shown in FIG. 8C may have a honeycomb structure.

  In the dicing film 1 formed of a plurality of layers as shown in FIG. 7, for example, planar openings 22 a as shown in FIGS. 8A to 8C are formed in the second film 22 as the recesses 4. Is done.

  Moreover, the recessed part 4 formed in the dicing film 1 is not restricted to the structure which has arrange | positioned many island-like hemispheres and cylinders as mentioned above. For example, as shown in FIG. 9 (a), a part of the base film 2 in which the hexagonal concave portions 45 are arranged in a honeycomb shape at intervals and further partitioned between the numerous hexagonal concave portions 45. A shape in which the concave portions 45 are connected to each other by a connecting concave portion 46 that crosses the gap may be used. Further, as shown in FIG. 9 (b), the concave portions 47 having a square plane are adjacent vertically and horizontally with a space therebetween, and a part of the base film 2 that partitions the rectangular concave portions 47 is connected to the connecting concave portion 48. The shape may be connected to each other. Any of the recesses 45 and 47 is preferably formed in a position and a size that overlap with the semiconductor integrated circuits S on both sides of the dicing line L of the semiconductor wafer W attached to the adhesive layer 3.

  9 (a) and 9 (b), since the plurality of recesses 45, 47 of the base material fill 2 are connected via the connection recesses 46, 48, the thin layer portion 2c above them is also continuous. Yes. For this reason, as the semiconductor chip C is pushed up from the dicing film 1, the recess 2 d generated in the thin layer portion 2 c easily spreads from the edge of the semiconductor chip C to the inside, and it is easier to peel the semiconductor chip C from the dicing film 1. become.

  All examples and conditional expressions given here are intended to help the reader understand the inventions and concepts that have contributed to the promotion of technology, such examples and It is interpreted without being limited to the conditions, and the organization of such examples in the specification is not related to the superiority or inferiority of the present invention. While embodiments of the present invention have been described in detail, it will be understood that various changes, substitutions and variations can be made thereto without departing from the spirit and scope of the invention.

Next, features of the embodiment of the present invention will be described.
(Appendix 1) An adhesive layer to which a semiconductor wafer is attached, a base film on which the previous adhesive layer is formed, and formed on a plurality of positions on the other surface opposite to the one surface of the base film, A dicing film having a recess that is crushed by a negative pressure.
(Additional remark 2) The said base film is a multilayer structure, Comprising: The 2nd film used as the exposed surface on the opposite side with respect to the 1st film which has the surface where the said adhesion layer is affixed has the opening part used as the said recessed part. The dicing film according to appendix 1, wherein the dicing film is formed and at least the opening is closed by the first film.
(Additional remark 3) The 1st elastic modulus of the said 1st film is lower than the 2nd elastic modulus of the said 2nd film, The dicing film of Additional remark 2 characterized by the above-mentioned.
(Additional remark 4) The dicing film as described in any one of Additional remark 1 thru | or Additional remark 3 characterized by the planar shape of the said recessed part being island shape.
(Appendix 5) The dicing film according to any one of appendices 1 to 4, wherein the island-shaped recesses are partially connected to each other by a connection recess.
(Additional remark 6) In the area | region where the said semiconductor wafer is affixed in the said dicing film, the ratio per unit area which the area | region surrounding the said recessed part among the said base film occupies is 70% or less, The additional remark 1 thru | or additional remarks characterized by the above-mentioned The dicing film according to any one of 5.
(Appendix 7) A semiconductor device manufacturing jig, wherein the adhesive layer and the base film are stretched inside a ring.
(Supplementary Note 8) Of the dicing film having a base film in which concave portions are formed at a plurality of positions on the other side opposite to the one surface on which the adhesive layer is formed, the adhesive layer includes a plurality of the concave portions. A step of attaching a semiconductor wafer by overlapping a dicing line in part, a step of dividing the semiconductor wafer along the dicing line to form a semiconductor chip, and sucking the dicing film from the base film side, Crushing the recess and forming a recess overlapping the semiconductor chip on the one surface opposite to the recess, and by pushing up the semiconductor chip through the dicing film, the semiconductor chip from the recess of the dicing film A step of peeling the semiconductor chip from the adhesive layer inward, and the semiconductor chip pushed up is collected. By suction by preparative method of manufacturing a semiconductor device characterized by having the steps of peeling from the dicing film.
(Additional remark 9) The said adhesion layer is formed from a radiation curable material, and after forming the said semiconductor chip and before forming the said hollow in the said dicing film, the adhesiveness of the said adhesion layer is formed by the said radiation irradiation. 9. The method for manufacturing a semiconductor device according to appendix 8, which includes a step of decreasing.
(Supplementary note 10) The semiconductor device manufacturing method according to supplementary note 7 or supplementary note 8, wherein the push-up of the semiconductor chip is performed using a needle from the one surface side of the dicing film.
(Appendix 11) The dicing film has a multi-layer structure, and the first film on the one surface side that contacts the adhesive layer 3 has a lower elastic modulus than the second film on the opposite surface. The method for manufacturing a semiconductor device according to any one of Appendix 7 to Appendix 10.

DESCRIPTION OF SYMBOLS 1 Dicing film 2 Base film 3 Adhesive layer 4 Recessed part 5 Film ring 21 1st film 22 2nd film 22a Opening part 10 Pickup apparatus 13 Adsorption cylinder 14 Needle holder 15 Needle 17 Collet

Claims (6)

An adhesive layer to which a semiconductor wafer is attached;
A base film having an adhesive layer formed on one surface,
A recess having a size that is formed at a plurality of positions on the other surface opposite to the one surface of the base film, and is crushed by negative pressure,
Dicing film having   The base film has a multi-layer structure, and an opening serving as the recess is formed in the second film which is an exposed surface opposite to the first film having a surface to which the adhesive layer is attached. The dicing film according to claim 1, wherein the opening is closed by at least the first film.   The dicing film according to claim 2, wherein the first elastic modulus of the first film is lower than the second elastic modulus of the second film. A dicing film according to any one of claims 1 to 3,
A ring with the dicing film on the inside;
A jig for manufacturing a semiconductor device. Dicing the dicing film of the dicing film having a base film in which concave portions are formed at a plurality of positions on the other surface opposite to the one surface on which the adhesive layer is formed, and part of the plurality of concave portions. A process of attaching semiconductor wafers with overlapping lines;
Dividing the semiconductor wafer along the dicing line to form semiconductor chips;
A step of sucking the dicing film from the base film side, crushing the concave portion, and forming a depression overlapping the semiconductor chip on the one surface opposite to the concave portion;
Peeling the semiconductor chip from the adhesive layer from the depression of the dicing film to the inside of the semiconductor chip by pushing up the semiconductor chip through the dicing film;
Sucking the semiconductor chip pushed up by a collet and peeling it from the dicing film;
A method for manufacturing a semiconductor device, comprising:   6. The method of manufacturing a semiconductor device according to claim 5, wherein the push-up of the semiconductor chip is performed using a needle from the one surface side of the dicing film.

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