JP2016136607A5 - - Google Patents

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Publication number
JP2016136607A5
JP2016136607A5 JP2015113580A JP2015113580A JP2016136607A5 JP 2016136607 A5 JP2016136607 A5 JP 2016136607A5 JP 2015113580 A JP2015113580 A JP 2015113580A JP 2015113580 A JP2015113580 A JP 2015113580A JP 2016136607 A5 JP2016136607 A5 JP 2016136607A5
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JP
Japan
Prior art keywords
light
wavelengths
intensity
plasma processing
periods
Prior art date
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Application number
JP2015113580A
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English (en)
Japanese (ja)
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JP2016136607A (ja
JP6560909B2 (ja
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Publication date
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Priority to KR1020150126202A priority Critical patent/KR101750001B1/ko
Priority to US14/851,744 priority patent/US9865439B2/en
Priority to TW104130143A priority patent/TWI584376B/zh
Publication of JP2016136607A publication Critical patent/JP2016136607A/ja
Publication of JP2016136607A5 publication Critical patent/JP2016136607A5/ja
Application granted granted Critical
Publication of JP6560909B2 publication Critical patent/JP6560909B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2015113580A 2015-01-19 2015-06-04 プラズマ処理方法およびプラズマ処理装置 Active JP6560909B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020150126202A KR101750001B1 (ko) 2015-01-19 2015-09-07 플라즈마 처리 방법 및 플라즈마 처리 장치
US14/851,744 US9865439B2 (en) 2015-01-19 2015-09-11 Plasma processing apparatus
TW104130143A TWI584376B (zh) 2015-01-19 2015-09-11 Plasma processing device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015007360 2015-01-19
JP2015007360 2015-01-19

Publications (3)

Publication Number Publication Date
JP2016136607A JP2016136607A (ja) 2016-07-28
JP2016136607A5 true JP2016136607A5 (OSRAM) 2018-03-01
JP6560909B2 JP6560909B2 (ja) 2019-08-14

Family

ID=56513113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015113580A Active JP6560909B2 (ja) 2015-01-19 2015-06-04 プラズマ処理方法およびプラズマ処理装置

Country Status (3)

Country Link
JP (1) JP6560909B2 (OSRAM)
KR (1) KR101750001B1 (OSRAM)
TW (1) TWI584376B (OSRAM)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10215704B2 (en) * 2017-03-02 2019-02-26 Tokyo Electron Limited Computed tomography using intersecting views of plasma using optical emission spectroscopy during plasma processing
US10319649B2 (en) * 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
JP6832800B2 (ja) * 2017-06-21 2021-02-24 東京エレクトロン株式会社 プラズマ処理装置
JP7012900B1 (ja) * 2020-03-11 2022-01-28 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理方法
JP7630371B2 (ja) * 2021-06-21 2025-02-17 東京エレクトロン株式会社 測定方法および測定装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128823A (en) * 1981-02-02 1982-08-10 Shimadzu Corp Spectrum measuring device
JPS6111622A (ja) * 1984-06-27 1986-01-20 Hitachi Ltd 分光光度計
JP3217581B2 (ja) * 1994-02-25 2001-10-09 東京エレクトロン株式会社 エッチング終点検出方法
KR100411318B1 (ko) * 1998-02-03 2003-12-18 가가쿠 기쥬츠 신코 지교단 반도체 플라즈마 처리에 있어서의 종점 검출 방법
KR100426988B1 (ko) * 2001-11-08 2004-04-14 삼성전자주식회사 반도체 제조장비의 식각 종말점 검출장치 및 그에 따른검출방법
TW560080B (en) * 2002-09-12 2003-11-01 Winbond Electronics Corp A method for detecting the end point of plasma etching process by using matrix
US6982175B2 (en) * 2003-02-14 2006-01-03 Unaxis Usa Inc. End point detection in time division multiplexed etch processes
US20080176149A1 (en) * 2006-10-30 2008-07-24 Applied Materials, Inc. Endpoint detection for photomask etching
JP2009231718A (ja) * 2008-03-25 2009-10-08 Renesas Technology Corp ドライエッチング終点検出方法
JP5458693B2 (ja) 2009-06-26 2014-04-02 凸版印刷株式会社 終点検出装置

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