JP2016135881A - フッ化物蛍光体及びそれを用いた発光装置 - Google Patents
フッ化物蛍光体及びそれを用いた発光装置 Download PDFInfo
- Publication number
- JP2016135881A JP2016135881A JP2016037847A JP2016037847A JP2016135881A JP 2016135881 A JP2016135881 A JP 2016135881A JP 2016037847 A JP2016037847 A JP 2016037847A JP 2016037847 A JP2016037847 A JP 2016037847A JP 2016135881 A JP2016135881 A JP 2016135881A
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- fluoride
- light
- region
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 title claims abstract description 26
- 239000002245 particle Substances 0.000 claims abstract description 48
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000000203 mixture Substances 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 12
- 238000010828 elution Methods 0.000 claims abstract description 10
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 9
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 6
- 229910052718 tin Inorganic materials 0.000 claims abstract description 6
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 6
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 6
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical group [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000011591 potassium Substances 0.000 claims abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 101
- XPIIDKFHGDPTIY-UHFFFAOYSA-N F.F.F.P Chemical compound F.F.F.P XPIIDKFHGDPTIY-UHFFFAOYSA-N 0.000 claims description 51
- 239000000126 substance Substances 0.000 claims description 9
- 229910052791 calcium Inorganic materials 0.000 claims description 6
- 229910052712 strontium Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 238000013459 approach Methods 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 102100032047 Alsin Human genes 0.000 claims description 2
- 101710187109 Alsin Proteins 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 2
- 229910052788 barium Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- 239000011572 manganese Substances 0.000 description 78
- 239000000243 solution Substances 0.000 description 63
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 17
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 11
- 230000007423 decrease Effects 0.000 description 11
- 230000005284 excitation Effects 0.000 description 10
- 238000007789 sealing Methods 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000003638 chemical reducing agent Substances 0.000 description 7
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 238000000295 emission spectrum Methods 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 238000001035 drying Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 229910052747 lanthanoid Inorganic materials 0.000 description 4
- 150000002602 lanthanoids Chemical class 0.000 description 4
- 229910052748 manganese Inorganic materials 0.000 description 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 238000004040 coloring Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 235000011056 potassium acetate Nutrition 0.000 description 2
- 159000000001 potassium salts Chemical class 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- -1 rare earth aluminate Chemical class 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- QVMHUALAQYRRBM-UHFFFAOYSA-N [P].[P] Chemical compound [P].[P] QVMHUALAQYRRBM-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 229910052586 apatite Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000007771 core particle Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- VSIIXMUUUJUKCM-UHFFFAOYSA-D pentacalcium;fluoride;triphosphate Chemical compound [F-].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O VSIIXMUUUJUKCM-UHFFFAOYSA-D 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
Description
(実施の形態)
(表面領域)
(蛍光体の製造方法)
(1)少なくともMnとFとを含有する溶液と、少なくともKとFとを含有する溶液と、少なくともSiとFとを含有する溶液と、を混合して生成物(蛍光体)を析出させる工程
(発光装置)
(発光素子)
(発光スペクトル)
(他の蛍光体)
(実施例1)
この反応により、溶液D中の[MnF6]2-をMn2+とした後に、溶液Eを加えていくことで、比較例1の蛍光体コアに、4価Mnの濃度を、形成される蛍光体粒子の内部領域よりも低くした表面領域を形成した。得られた沈殿物を分離後、IPA洗浄を行い、70℃で10時間乾燥することで実施例1のフッ化物蛍光体を作製した。
(実施例2〜9)
(耐水評価結果)
Claims (8)
- Mnで付活され、K、M(ただし、Kはカリウム、MはTi、Zr、Hf、Si、Ge及びSnからなる群より選択される少なくとも1種の元素である。)を含む組成を有し、MおよびMnの合計に対するMnのモル比が0.030以下であるフッ化物蛍光体であり、
前記フッ化物蛍光体を、蛍光体量の1〜5倍量の純水中に投入して蛍光体粒子表面を溶解させた際のMn溶出量が、0.05〜3ppmの範囲であるフッ化物蛍光体。 - Mnで付活され、K、M(ただし、Kはカリウム、MはTi、Zr、Hf、Si、Ge及びSnからなる群より選択される少なくとも1種の元素である。)を含む組成を有し、MおよびMnの合計に対するMnのモル比が0.030以下であるフッ化物蛍光体であり、
蛍光体粒子の内部領域に対するMn濃度が30%以下である表面領域を有するフッ化物蛍光体。 - 請求項1又は2に記載のフッ化物蛍光体であって、
前記Mは、Si、又はSi及びGeであるフッ化物蛍光体。 - 請求項1または3に記載のフッ化物蛍光体であって、
Mnのモル濃度を、蛍光体粒子の内部領域よりも低くした表面領域を有するフッ化物蛍光体。 - 請求項4に記載のフッ化物蛍光体であって、
前記内部領域ではMnのモル濃度が略均一であり、前記表面領域においては、Mnのモル濃度を蛍光体粒子の表面に近づくほど低くしてなるフッ化物蛍光体。 - 請求項4又は5に記載のフッ化物蛍光体であって、
前記表面領域に存在するMnのモル濃度が、前記内部領域のMnモル濃度の0.5%以上30%以下であるフッ化物蛍光体。 - 請求項4〜6のいずれか一項に記載のフッ化物蛍光体であって、
前記表面領域の厚さは、前記フッ化物蛍光体の平均粒径の1/20〜1/50であるフッ化物蛍光体。 - 可視光の短波長側の光を発する光源と、
前記光源からの光を吸収して赤色に発光可能な請求項1〜7のいずれか一項に記載のフッ化物蛍光体と、
(Ca,Sr,Ba)2SiO4:Eu、(Y,Gd)3(Ga,Al)5O12:Ce、(Si,Al)6(O,N)8:Eu、SrGa2S4:Eu、(Ca,Sr)2Si5N8:Eu、CaAlSiN3:Eu、(Ca,Sr)AlSiN3:Euから選択された少なくとも1種の蛍光体を有する発光装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013140212 | 2013-07-03 | ||
JP2013140212 | 2013-07-03 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015142053A Division JP5935932B2 (ja) | 2013-07-03 | 2015-07-16 | フッ化物蛍光体及びそれを用いた発光装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016135881A true JP2016135881A (ja) | 2016-07-28 |
JP2016135881A5 JP2016135881A5 (ja) | 2016-09-08 |
JP6304287B2 JP6304287B2 (ja) | 2018-04-04 |
Family
ID=54696814
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015142053A Active JP5935932B2 (ja) | 2013-07-03 | 2015-07-16 | フッ化物蛍光体及びそれを用いた発光装置 |
JP2015142052A Active JP5854166B2 (ja) | 2013-07-03 | 2015-07-16 | フッ化物蛍光体の製造方法 |
JP2016037847A Active JP6304287B2 (ja) | 2013-07-03 | 2016-02-29 | フッ化物蛍光体粒子及びそれを用いた発光装置 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015142053A Active JP5935932B2 (ja) | 2013-07-03 | 2015-07-16 | フッ化物蛍光体及びそれを用いた発光装置 |
JP2015142052A Active JP5854166B2 (ja) | 2013-07-03 | 2015-07-16 | フッ化物蛍光体の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (3) | JP5935932B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6149606B2 (ja) * | 2013-08-26 | 2017-06-21 | 日亜化学工業株式会社 | フッ化物蛍光体の製造方法 |
KR20170077679A (ko) * | 2015-12-28 | 2017-07-06 | 서울반도체 주식회사 | 광색역 발광소자 |
US11702348B2 (en) | 2016-08-19 | 2023-07-18 | Current Lighting Solutions, Llc | Purified potassium hexafluoromanganate and methods for purifying potassium hexafluoromanganate |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009099211A1 (ja) * | 2008-02-07 | 2009-08-13 | Mitsubishi Chemical Corporation | 半導体発光装置、バックライト、カラー画像表示装置、及びそれらに用いる蛍光体 |
JP2009212508A (ja) * | 2008-02-07 | 2009-09-17 | Mitsubishi Chemicals Corp | 半導体発光装置、バックライトおよびカラー画像表示装置 |
JP2009280763A (ja) * | 2008-05-26 | 2009-12-03 | Sharp Corp | 蛍光体調製物およびそれを用いた発光装置 |
JP2011012091A (ja) * | 2009-06-30 | 2011-01-20 | Mitsubishi Chemicals Corp | 蛍光体及びその製造方法と、その蛍光体を用いた蛍光体含有組成物及び発光装置、並びに、その発光装置を用いた画像表示装置及び照明装置 |
WO2012015581A1 (en) * | 2010-07-27 | 2012-02-02 | General Electric Company | Moisture-resistant phosphor and associated method |
US8252613B1 (en) * | 2011-03-23 | 2012-08-28 | General Electric Company | Color stable manganese-doped phosphors |
JP2012224536A (ja) * | 2011-04-08 | 2012-11-15 | Shin-Etsu Chemical Co Ltd | 複フッ化物及び複フッ化物蛍光体の製造方法 |
JP2013014715A (ja) * | 2011-07-06 | 2013-01-24 | Nichia Corp | フッ化物蛍光体及びそのフッ化物蛍光体を用いた発光装置 |
JP2014177586A (ja) * | 2013-03-15 | 2014-09-25 | Toshiba Corp | 蛍光体、およびその製造方法、ならびにその蛍光体を用いた発光装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013053503A (ja) * | 2011-09-05 | 2013-03-21 | Hiroaki Yamashiro | 潮位差海水流発電装置 |
-
2015
- 2015-07-16 JP JP2015142053A patent/JP5935932B2/ja active Active
- 2015-07-16 JP JP2015142052A patent/JP5854166B2/ja active Active
-
2016
- 2016-02-29 JP JP2016037847A patent/JP6304287B2/ja active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009099211A1 (ja) * | 2008-02-07 | 2009-08-13 | Mitsubishi Chemical Corporation | 半導体発光装置、バックライト、カラー画像表示装置、及びそれらに用いる蛍光体 |
JP2009212508A (ja) * | 2008-02-07 | 2009-09-17 | Mitsubishi Chemicals Corp | 半導体発光装置、バックライトおよびカラー画像表示装置 |
JP2009280763A (ja) * | 2008-05-26 | 2009-12-03 | Sharp Corp | 蛍光体調製物およびそれを用いた発光装置 |
JP2011012091A (ja) * | 2009-06-30 | 2011-01-20 | Mitsubishi Chemicals Corp | 蛍光体及びその製造方法と、その蛍光体を用いた蛍光体含有組成物及び発光装置、並びに、その発光装置を用いた画像表示装置及び照明装置 |
WO2012015581A1 (en) * | 2010-07-27 | 2012-02-02 | General Electric Company | Moisture-resistant phosphor and associated method |
JP2013533363A (ja) * | 2010-07-27 | 2013-08-22 | ゼネラル・エレクトリック・カンパニイ | 耐湿性蛍光体及び関連する方法 |
US8252613B1 (en) * | 2011-03-23 | 2012-08-28 | General Electric Company | Color stable manganese-doped phosphors |
WO2012128837A1 (en) * | 2011-03-23 | 2012-09-27 | General Electric Company | Color stable manganese-doped phosphors |
JP2012224536A (ja) * | 2011-04-08 | 2012-11-15 | Shin-Etsu Chemical Co Ltd | 複フッ化物及び複フッ化物蛍光体の製造方法 |
JP2013014715A (ja) * | 2011-07-06 | 2013-01-24 | Nichia Corp | フッ化物蛍光体及びそのフッ化物蛍光体を用いた発光装置 |
JP2014177586A (ja) * | 2013-03-15 | 2014-09-25 | Toshiba Corp | 蛍光体、およびその製造方法、ならびにその蛍光体を用いた発光装置 |
Also Published As
Publication number | Publication date |
---|---|
JP5935932B2 (ja) | 2016-06-15 |
JP6304287B2 (ja) | 2018-04-04 |
JP2015221905A (ja) | 2015-12-10 |
JP5854166B2 (ja) | 2016-02-09 |
JP2015212398A (ja) | 2015-11-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5783302B2 (ja) | フッ化物蛍光体及びそれを用いた発光装置並びに蛍光体の製造方法 | |
JP6102640B2 (ja) | フッ化物蛍光体及びその製造方法並びにそれを用いる発光装置 | |
JP5954355B2 (ja) | フッ化物蛍光体及びそれを用いる発光装置 | |
KR102245993B1 (ko) | 불화물 형광체 및 그 제조 방법 및 발광 장치 | |
JP5375906B2 (ja) | フッ化物蛍光体及びそれを用いた発光装置 | |
JP5418548B2 (ja) | フッ化物蛍光体及びそのフッ化物蛍光体を用いた発光装置 | |
JP6149606B2 (ja) | フッ化物蛍光体の製造方法 | |
JP6024850B2 (ja) | フッ化物蛍光体及びそれを用いる発光装置 | |
TW201538684A (zh) | 螢光體、及其製造方法以及使用該螢光體之發光裝置 | |
JP5915801B1 (ja) | フッ化物蛍光体及びその製造方法並びに発光装置 | |
JP6304287B2 (ja) | フッ化物蛍光体粒子及びそれを用いた発光装置 | |
JP6094522B2 (ja) | フッ化物蛍光体の製造方法 | |
JP2016069576A (ja) | フッ化物蛍光体及びその製造方法並びに発光装置 | |
US11041118B2 (en) | Fluoride fluorescent material and method for producing the same as well as light emitting device using the same | |
JP6451759B2 (ja) | フッ化物蛍光体及びその製造方法並びにそれを用いた発光装置 | |
JP6344460B2 (ja) | フッ化物蛍光体の製造方法 | |
JP6066003B2 (ja) | フッ化物蛍光体及びその製造方法並びに発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160701 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160701 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20161226 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170321 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170425 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20171003 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20171030 Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171030 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20171107 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180206 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180219 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6304287 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |