JP2016127230A - 半導体装置の製造装置及び半導体装置の製造装置の管理方法 - Google Patents
半導体装置の製造装置及び半導体装置の製造装置の管理方法 Download PDFInfo
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- JP2016127230A JP2016127230A JP2015002168A JP2015002168A JP2016127230A JP 2016127230 A JP2016127230 A JP 2016127230A JP 2015002168 A JP2015002168 A JP 2015002168A JP 2015002168 A JP2015002168 A JP 2015002168A JP 2016127230 A JP2016127230 A JP 2016127230A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000007726 management method Methods 0.000 title claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 238000011109 contamination Methods 0.000 claims abstract description 58
- 238000012545 processing Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 33
- 238000004458 analytical method Methods 0.000 description 16
- 230000003287 optical effect Effects 0.000 description 15
- 238000004140 cleaning Methods 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 3
- 230000002401 inhibitory effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000003377 acid catalyst Substances 0.000 description 1
- 229920005601 base polymer Polymers 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
【解決手段】半導体基板及び半導体基板上に設けられたレジスト膜を含む露光前基板の重量を測定する工程S13と、レジスト膜に対して露光処理を行う工程S14と、半導体基板及び露光処理が行われたレジスト膜を含む露光後基板の重量を測定する工程S15と、露光前基板の重量と露光後基板の重量との重量差を求める工程S17と、を備える。
【選択図】図2
Description
20…露光装置 21…レチクル配置部
22…ウェハステージ 23…光学系
30…重量測定部 40…光源
50…インターフェース 60…解析部
100a…露光前基板 100b…露光後基板
101…半導体基板
102a…レジスト膜 102b…レジスト膜
Claims (5)
- 半導体基板及び前記半導体基板上に設けられたレジスト膜を含む露光前基板の重量を測定する工程と、
前記レジスト膜に対して露光処理を行う工程と、
前記半導体基板及び前記露光処理が行われたレジスト膜を含む露光後基板の重量を測定する工程と、
前記露光前基板の重量と前記露光後基板の重量との重量差を求める工程と、
を備えることを特徴とする半導体装置の製造装置の管理方法。 - 前記露光処理によって生成されたコンタミネーション膜の膜厚を前記重量差に基づいて求める工程を、さらに備える
ことを特徴とする請求項1に記載の管理方法。 - 前記コンタミネーション膜の膜厚を、それまでに求められているコンタミネーション膜厚積算値に加算する工程を、さらに備える
ことを特徴とする請求項2に記載の管理方法。 - 半導体基板上に設けられたレジスト膜に対して露光処理を行う露光装置と、
前記半導体基板及び前記半導体基板上に設けられたレジスト膜を含む露光前基板の重量と、前記半導体基板及び前記露光装置によって露光処理が行われたレジスト膜を含む露光後基板の重量を測定する重量測定部と、
を備えることを特徴とする半導体装置の製造装置。 - 露光装置と、
前記露光装置に組み込まれ、半導体基板を含む基板の重量を測定する重量測定部と、
を備えることを特徴とする半導体装置の製造装置。
Priority Applications (4)
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JP2015002168A JP6419581B2 (ja) | 2015-01-08 | 2015-01-08 | 半導体装置の製造装置及び半導体装置の製造装置の管理方法 |
US14/835,854 US9958794B2 (en) | 2015-01-08 | 2015-08-26 | Manufacturing apparatus of semiconductor device and management method of manufacturing apparatus of semiconductor device |
KR1020150120119A KR20160085687A (ko) | 2015-01-08 | 2015-08-26 | 반도체 장치의 제조 장치 및 반도체 장치의 제조 장치의 관리 방법 |
TW104128710A TWI597763B (zh) | 2015-01-08 | 2015-08-31 | 半導體裝置之製造設備及半導體裝置之製造設備之管理方法 |
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JP2015002168A JP6419581B2 (ja) | 2015-01-08 | 2015-01-08 | 半導体装置の製造装置及び半導体装置の製造装置の管理方法 |
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JP2016127230A true JP2016127230A (ja) | 2016-07-11 |
JP6419581B2 JP6419581B2 (ja) | 2018-11-07 |
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Country Status (4)
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US (1) | US9958794B2 (ja) |
JP (1) | JP6419581B2 (ja) |
KR (1) | KR20160085687A (ja) |
TW (1) | TWI597763B (ja) |
Families Citing this family (2)
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CN108490841B (zh) * | 2018-04-28 | 2020-01-10 | 四川隧唐科技股份有限公司 | 梁片生产工序更新方法、装置、管理系统及储存介质 |
JP2023046643A (ja) | 2021-09-24 | 2023-04-05 | 東京エレクトロン株式会社 | ガス管理方法及び基板処理システム |
Citations (8)
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JP2001203254A (ja) * | 2000-01-19 | 2001-07-27 | Nikon Corp | 基板搬送装置およびこれを備える露光装置 |
JP2006024939A (ja) * | 2004-07-07 | 2006-01-26 | Asml Netherlands Bv | リソグラフィ装置およびデバイス製造方法 |
JP2007208064A (ja) * | 2006-02-02 | 2007-08-16 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP4205558B2 (ja) * | 2003-11-20 | 2009-01-07 | 富士通株式会社 | 汚染評価方法、汚染評価装置、露光方法、及び、露光装置 |
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- 2015-01-08 JP JP2015002168A patent/JP6419581B2/ja active Active
- 2015-08-26 US US14/835,854 patent/US9958794B2/en active Active
- 2015-08-26 KR KR1020150120119A patent/KR20160085687A/ko not_active Application Discontinuation
- 2015-08-31 TW TW104128710A patent/TWI597763B/zh active
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Also Published As
Publication number | Publication date |
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TWI597763B (zh) | 2017-09-01 |
KR20160085687A (ko) | 2016-07-18 |
US9958794B2 (en) | 2018-05-01 |
US20160204040A1 (en) | 2016-07-14 |
JP6419581B2 (ja) | 2018-11-07 |
TW201635343A (zh) | 2016-10-01 |
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