JP2016119434A5 - - Google Patents

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Publication number
JP2016119434A5
JP2016119434A5 JP2014259753A JP2014259753A JP2016119434A5 JP 2016119434 A5 JP2016119434 A5 JP 2016119434A5 JP 2014259753 A JP2014259753 A JP 2014259753A JP 2014259753 A JP2014259753 A JP 2014259753A JP 2016119434 A5 JP2016119434 A5 JP 2016119434A5
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JP
Japan
Prior art keywords
layer
electrode layer
semiconductor
interlayer film
electrode
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Application number
JP2014259753A
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English (en)
Japanese (ja)
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JP2016119434A (ja
JP6322130B2 (ja
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Priority to JP2014259753A priority Critical patent/JP6322130B2/ja
Priority claimed from JP2014259753A external-priority patent/JP6322130B2/ja
Publication of JP2016119434A publication Critical patent/JP2016119434A/ja
Publication of JP2016119434A5 publication Critical patent/JP2016119434A5/ja
Application granted granted Critical
Publication of JP6322130B2 publication Critical patent/JP6322130B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014259753A 2014-12-24 2014-12-24 半導体装置、その製造方法、それを用いた電力変換装置 Expired - Fee Related JP6322130B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014259753A JP6322130B2 (ja) 2014-12-24 2014-12-24 半導体装置、その製造方法、それを用いた電力変換装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014259753A JP6322130B2 (ja) 2014-12-24 2014-12-24 半導体装置、その製造方法、それを用いた電力変換装置

Publications (3)

Publication Number Publication Date
JP2016119434A JP2016119434A (ja) 2016-06-30
JP2016119434A5 true JP2016119434A5 (cg-RX-API-DMAC10.html) 2017-04-13
JP6322130B2 JP6322130B2 (ja) 2018-05-09

Family

ID=56244448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014259753A Expired - Fee Related JP6322130B2 (ja) 2014-12-24 2014-12-24 半導体装置、その製造方法、それを用いた電力変換装置

Country Status (1)

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JP (1) JP6322130B2 (cg-RX-API-DMAC10.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6964538B2 (ja) 2018-02-28 2021-11-10 株式会社 日立パワーデバイス 半導体装置および電力変換装置
JP7835974B2 (ja) * 2021-12-13 2026-03-26 ミネベアパワーデバイス株式会社 半導体装置および電力変換装置
JP7715684B2 (ja) * 2022-03-02 2025-07-30 株式会社東芝 半導体装置
JP7860387B2 (ja) * 2022-03-28 2026-05-18 ミネベアパワーデバイス株式会社 半導体装置および電力変換装置
JP7904460B2 (ja) * 2022-03-30 2026-08-13 ミネベアパワーデバイス株式会社 半導体装置および電力変換装置
EP4439680A1 (en) * 2023-03-31 2024-10-02 Hitachi Energy Ltd Power semiconductor device and method for producing a power semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000114525A (ja) * 1998-08-03 2000-04-21 Fuji Electric Co Ltd 半導体装置およびその製造方法
JP6072432B2 (ja) * 2012-05-15 2017-02-01 三菱電機株式会社 半導体装置及びその製造方法

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