JP2016095504A5 - - Google Patents

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Publication number
JP2016095504A5
JP2016095504A5 JP2015211796A JP2015211796A JP2016095504A5 JP 2016095504 A5 JP2016095504 A5 JP 2016095504A5 JP 2015211796 A JP2015211796 A JP 2015211796A JP 2015211796 A JP2015211796 A JP 2015211796A JP 2016095504 A5 JP2016095504 A5 JP 2016095504A5
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JP
Japan
Prior art keywords
layer
oxymetal
carrier substrate
precursor material
substrate
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JP2015211796A
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English (en)
Japanese (ja)
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JP6199941B2 (ja
JP2016095504A (ja
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Publication of JP2016095504A publication Critical patent/JP2016095504A/ja
Publication of JP2016095504A5 publication Critical patent/JP2016095504A5/ja
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Publication of JP6199941B2 publication Critical patent/JP6199941B2/ja
Expired - Fee Related legal-status Critical Current
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JP2015211796A 2014-11-12 2015-10-28 ディスプレイデバイスの製造 Expired - Fee Related JP6199941B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462078938P 2014-11-12 2014-11-12
US62/078,938 2014-11-12

Publications (3)

Publication Number Publication Date
JP2016095504A JP2016095504A (ja) 2016-05-26
JP2016095504A5 true JP2016095504A5 (https=) 2017-06-15
JP6199941B2 JP6199941B2 (ja) 2017-09-20

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ID=54849085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015211796A Expired - Fee Related JP6199941B2 (ja) 2014-11-12 2015-10-28 ディスプレイデバイスの製造

Country Status (6)

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US (1) US9515272B2 (https=)
EP (1) EP3020849B1 (https=)
JP (1) JP6199941B2 (https=)
KR (1) KR101759155B1 (https=)
CN (1) CN105591038B (https=)
TW (1) TWI572078B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104979262B (zh) * 2015-05-14 2020-09-22 浙江中纳晶微电子科技有限公司 一种晶圆分离的方法
KR102554183B1 (ko) 2016-07-29 2023-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 표시 장치, 표시 모듈, 및 전자 기기
TW201808628A (zh) * 2016-08-09 2018-03-16 半導體能源研究所股份有限公司 半導體裝置的製造方法
CN106098939A (zh) * 2016-08-26 2016-11-09 武汉华星光电技术有限公司 激光无损剥离柔性基板的方法
US10923350B2 (en) * 2016-08-31 2021-02-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
CN106356472A (zh) * 2016-10-18 2017-01-25 武汉华星光电技术有限公司 Oled器件制作方法及oled器件
JP6907032B2 (ja) * 2017-06-06 2021-07-21 株式会社ジャパンディスプレイ 表示装置及びその製造方法
US10693070B2 (en) 2017-08-08 2020-06-23 Sharp Kabushiki Kaisha Manufacturing method for electroluminescence device
CN109686854B (zh) * 2017-10-19 2024-07-02 京东方科技集团股份有限公司 封装结构及封装方法、电子装置及封装薄膜回收方法
CN109216589B (zh) * 2018-09-19 2021-07-09 深圳市化讯半导体材料有限公司 一种柔性器件的制备方法及应用

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TWI515852B (zh) * 2013-05-01 2016-01-01 友達光電股份有限公司 主動元件基板與其之製作方法
US20150024522A1 (en) 2013-07-22 2015-01-22 Rohm And Haas Electronic Materials Llc Organometal materials and process
US8927439B1 (en) 2013-07-22 2015-01-06 Rohm And Haas Electronic Materials Llc Organoaluminum materials for forming aluminum oxide layer from coating composition that contains organic solvent

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