JP2016069660A - 半導体装置の製造方法、及び半導体製造装置 - Google Patents
半導体装置の製造方法、及び半導体製造装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 147
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 101
- 230000008859 change Effects 0.000 claims abstract description 48
- 239000012495 reaction gas Substances 0.000 claims abstract description 34
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 97
- 230000015572 biosynthetic process Effects 0.000 claims description 33
- 238000006243 chemical reaction Methods 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 9
- 239000013626 chemical specie Substances 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 44
- 238000005755 formation reaction Methods 0.000 description 33
- 230000007423 decrease Effects 0.000 description 19
- 239000000463 material Substances 0.000 description 7
- 238000012544 monitoring process Methods 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
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Abstract
Description
図1は第1の実施形態に係る半導体製造装置100(CVD装置)の構成を模式的に示す図の一例である。半導体製造装置100は、チャンバー(反応室)10、マスフローコントローラ(mass flow controller;MFC)26、CPU(中央演算処理装置;Central Processing Unit)28を有している。
WF6(g) + 3H2(g) → W(s) + 6HF(g) ・・・(1)
ここで、反応ガスは、WF6及びH2であり、WF6は材料ガス、H2は還元ガスである。式(1)における反応においては、材料ガスであるWF6を1mol、還元ガスであるH2を3mol、合計4molの反応ガスをチャンバー10内に導入する。ここで全ての反応ガスが反応に使用されれば6molのHFが生成される。すなわち、4molの反応ガスを導入すると、6molのガスが生成する。
上述のように、第1の実施形態においては、APC22の開度をモニターすることにより半導体基板18表面の表面積の変化を検知し、これにより半導体基板18表面の表面積の変化に応じて適切なガス流量に制御した。これに対して、第2の実施形態では、排ガス24に含まれる化学種の比の変化を検知することにより半導体基板18表面の表面積の変化を検知する。
次に、第3の実施形態について説明する。第3の実施形態では、ステージヒータ14のヒータパワーの変化を検知することにより半導体基板18表面の表面積の変化を検知する。
次に、第4の実施形態について説明する。第4の実施形態では、ステージヒータ14上面に設置されるリフターピン16に供給されるリフター駆動電流値の変化を検知することにより半導体基板18表面の表面積の変化を検知する。
上記に説明した実施形態は、様々な半導体装置に適用することができる。例えば、NAND型又はNOR型のフラッシュメモリ、EPROM、あるいはDRAM、SRAM、その他の半導体記憶装置、あるいは種々のロジックデバイス、その他の半導体装置に適用しても良い。
Claims (5)
- 成膜対象である半導体基板の表面が第1表面積を有する第1状態で、反応ガスの流量を第1流量として成膜を行い、
前記第1状態から、成膜対象である前記半導体基板の表面における前記第1表面積とは異なる第2表面積を有する第2状態への変化を検知し、
反応ガスの流量を、前記第1流量とは異なる第2流量に切り替えて成膜を行う半導体装置の製造方法。 - 前記成膜が行われる成膜装置は、反応室と、前記反応室に接続される自動圧力制御機器と、前記反応室内に配置され、半導体基板を載置可能なステージと、前記ステージに設けられ、半導体基板を持ち上げ可能なリフターとを有しており、
前記第1状態から前記第2状態への変化の検知は、前記自動圧力制御機器の開度の変化、前記反応室内からの排気内の化学種の比の変化、又は、前記リフターを駆動する駆動電流値の変化を検知することにより行う請求項1に記載の半導体装置の製造方法。 - 前記第2状態における成膜工程で、前記半導体基板の温度を上げる請求項1又は2に記載の半導体装置の製造方法。
- 半導体基板を処理する反応室と、前記反応室に供給する反応ガスの流量を調整するマスフローコントローラと、制御部とを有し、
成膜工程中に、成膜対象である半導体基板の表面の表面積が第1表面積を有する第1状態から、前記第1表面積と異なる第2表面積を有する第2状態に変化する場合に、
前記第1状態で、反応ガスの流量が第1流量である成膜工程を実施し、
前記第1状態から前記第2状態への変化を検知し、
その後、反応ガスの流量を前記第1流量とは異なる第2流量に切り替えて成膜工程を実施する半導体製造装置。 - 前記反応室内における前記第1状態から前記第2状態への変化を前記制御部が検知し、
これに応じて前記制御部が前記マスフローコントローラに対して制御を行うことにより前記第1流量から前記第2流量への切り替えを行う請求項4に記載の半導体製造装置。
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH09331106A (ja) * | 1996-06-10 | 1997-12-22 | Nec Corp | 半導体光素子の製造方法 |
JP2003077782A (ja) * | 2001-08-31 | 2003-03-14 | Toshiba Corp | 半導体装置の製造方法 |
JP2007096137A (ja) * | 2005-09-29 | 2007-04-12 | Denso Corp | 半導体基板の製造方法およびエピタキシャル成長装置 |
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JPH03177587A (ja) | 1989-12-06 | 1991-08-01 | Hitachi Ltd | プラズマ処理方法 |
JP2982003B2 (ja) | 1992-07-28 | 1999-11-22 | コマツ電子金属株式会社 | 気相成長装置および気相成長装置におけるマスフローコントローラの校正方法 |
JP2005005383A (ja) | 2003-06-10 | 2005-01-06 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
JP2006147695A (ja) | 2004-11-17 | 2006-06-08 | Nec Electronics Corp | 半導体装置の製造方法 |
JP2007239008A (ja) | 2006-03-08 | 2007-09-20 | Soken Kogyo Kk | 材料供給装置 |
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JPH09331106A (ja) * | 1996-06-10 | 1997-12-22 | Nec Corp | 半導体光素子の製造方法 |
JP2003077782A (ja) * | 2001-08-31 | 2003-03-14 | Toshiba Corp | 半導体装置の製造方法 |
JP2007096137A (ja) * | 2005-09-29 | 2007-04-12 | Denso Corp | 半導体基板の製造方法およびエピタキシャル成長装置 |
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