JP2016066700A - Power semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power semiconductor module having excellent assemblability and capable of being downsized.SOLUTION: A power semiconductor module comprises: a power semiconductor element; an emitter conductor electrically connected to an emitter pad of the power semiconductor element via a metal junction member; a gate conductor connected to a gate pad of the power semiconductor element via the metal junction member; and a first insulating substrate on which the emitter conductor and the gate conductor are mounted. The emitter conductor protrudes toward the emitter pad and includes a protrusion connected to the emitter pad via the metal junction member. The gate conductor includes a projection formed along a protrusion direction of the protrusion. The projection includes an adjustment part for adjusting the height of the projection in the protrusion direction.SELECTED DRAWING: Figure 6

Description

  The present invention relates to a power semiconductor module, and more particularly to a power semiconductor module for power conversion that controls a large current.

  In recent years, high-efficiency power conversion devices that use switching of semiconductor elements called power semiconductor devices to save energy have been used in a wide range of fields such as automobiles, railways, industrial equipment, and power equipment. The power semiconductor device includes a plurality of MOSFET chips and IGBT chips that control switching of a large current and diode chips that release a reverse voltage generated during switching. The power semiconductor device used in this way is required to have a power semiconductor module structure that generates a large amount of heat generated by energization and can be cooled efficiently and downsized.

  As a prior art according to the present invention, for example, there is a double-sided cooling type power semiconductor module structure as described in Patent Document 1 and Patent Document 2.

  In Patent Document 1, ceramic substrates with high withstand voltage and high heat conductivity are installed on the upper and lower sides of the chip with respect to the emitter electrode and the collector electrode of the IGBT chip and the anode electrode and the cathode electrode of the diode chip, respectively. It is joined to. On the other hand, the gate electrode of the IGBT chip is electrically bonded to the lower ceramic substrate by wire bonding.

  In Patent Document 2, in addition to circuit wiring, a protrusion for joining an emitter electrode and a gate electrode is further installed using a high melting point solder material on the upper ceramic substrate, and these are used using a low melting point solder material. By bonding, the structure does not use wire bonding.

Patent No. 4967447 Patent No. 3879150

  In the structure of Patent Document 1, when the gate electrode of the IGBT chip is electrically bonded using wire bonding technology, it is necessary to provide a gate circuit on the lower ceramic substrate, and to secure an insulation distance between the gate circuit and the collector circuit. Therefore, there is a problem that the power semiconductor module becomes large.

  In the structure of Patent Document 2, the gate circuit is provided in addition to the emitter circuit on the upper ceramic substrate, but it has been found that there are the following problems.

  Highly thermal conductive ceramic substrates are made of copper or aluminum with a thermal expansion coefficient of 17-23 (ppm / ° C) compared to ceramics such as aluminum nitride and silicon nitride with a low thermal expansion coefficient of 2-4 (ppm / ° C). It becomes the composition which became. In order to obtain a highly reliable substrate, the circuit member is firmly bonded to the ceramic at a high temperature of 600 to 1000 ° C. When cooling after bonding at a high temperature, a metallized layer is formed on the back side of the ceramic provided with the circuit so that the substrate does not warp due to thermal stress caused by the difference in thermal expansion. The volumes of the metallized layer, the gate circuit, and the emitter circuit need to be approximately the same.

  On the other hand, Patent Document 2 has a structure in which a spacer is bonded to a gate circuit and an emitter circuit of a ceramic substrate using a high melting point brazing material. In this structure, the volume on the circuit side increases after spacer bonding, and the ceramic substrate warps after cooling from the bonding temperature to room temperature. When warpage occurs in the ceramic substrate, displacement occurs in the plane of the projection provided on the gate circuit and the gate electrode of the IGBT, in the stacking direction. As a result, an open defect due to non-bonding and a short defect due to overflow of the brazing material occurred, resulting in problems in assembly.

  Also, if the gate electrode and emitter electrode of the IGBT chip and the spacers are bonded together, and the upper and lower ceramic substrates are bonded simultaneously, there will be variations in the thickness of the spacers, chips, and bonding members. There is a problem that the spacer for the gate electrode having a small area cannot be positioned.

  The width and depth of the gate electrode of the IGBT chip are small compared to the thickness of the spacer for securing the insulation distance between the gate / collector circuit. As a result, the spacer cannot stand on its own, and positioning during supply and joining becomes difficult.

  In addition, these problems become more prominent when increasing the insulation distance between the gate and collector in order to improve the breakdown voltage of the double-sided cooling power semiconductor module, and increasing the number of chips mounted due to large current. Improvement is required.

  In view of the above problems, an object of the present invention is to provide a power semiconductor module that is excellent in assemblability and can be miniaturized.

  In order to solve the above problems, a power semiconductor module according to the present invention includes a power semiconductor element, an emitter conductor electrically connected to an emitter pad of the power semiconductor element via a metal bonding member, and the power semiconductor element. A gate conductor connected to the gate pad via a metal bonding member; and a first insulating substrate for mounting the emitter conductor and the gate conductor, the emitter conductor protruding toward the emitter pad and the A protrusion connected to the emitter pad via a metal bonding member; and the gate conductor has a protrusion formed along the protrusion direction of the protrusion, the protrusion being the protrusion It has an adjustment part which adjusts the height of the projection in the direction.

  The power semiconductor module according to the present invention includes a gate terminal connected to the gate conductor, an emitter terminal connected to the emitter conductor, and a collector terminal, the gate terminal, the emitter terminal, and the collector terminal. The predetermined surface of the gate terminal, the predetermined surface of the emitter terminal, and the predetermined surface of the collector terminal are formed in the same plane.

  It is possible to provide a power semiconductor module that enables assembly and miniaturization of the power semiconductor module.

It is a perspective view of the power semiconductor module 901 regarding this embodiment. FIG. 2 is a circuit configuration diagram of a power semiconductor module 901 shown in FIG. It is the perspective view which removed the sealing material 11 from the power semiconductor module 901 of FIG. 1 is a perspective view of an IGBT 100 according to the present embodiment. FIG. 4 is a perspective view of a power semiconductor module 901 excluding a heat radiation portion 402 and an insulating layer 302 of the ceramic substrate 12 shown in FIG. 3. FIG. 2 is a cross-sectional view of a dotted line AA ′ portion of FIG. 1 viewed from the direction of an arrow. 7 is a perspective view showing an assembly process for mounting IGBT 100 and Diode 110 on ceramic substrate 12 and ceramic substrate 13. FIG. The external appearance perspective view after a transfer mold process is shown. 1 is a cross-sectional view taken along the line AA ′ of FIG. 1, showing a cross-section in which the gate terminal 21 is drawn from the sealing material 11. 1 is a cross-sectional view taken along the line BB ′ of FIG. 1 in which the emitter terminal 22 is drawn from the sealing material 11 according to another embodiment. FIG. 4 is a cross-sectional view taken along the CC ′ line of FIG. 1 according to another embodiment, in which the collector terminal 23 is drawn from the sealing material 11. It is a cross-sectional schematic diagram of the power semiconductor module 903 which is a modification of this invention. It is a cross-sectional schematic diagram of the power semiconductor module 904 which is a modification of this invention. It is a cross-sectional schematic diagram of the power semiconductor module 905 which is a modification of this invention. It is an external appearance perspective view of the power semiconductor module 906 which concerns on other embodiment. 2 is a 2in1 circuit configuration diagram corresponding to a power semiconductor module 906; FIG. FIG. 3 is a perspective view of a power semiconductor module 906 excluding a sealing part 11, an insulating layer 302 of a ceramic substrate 12, and a heat dissipation part 402. FIG. 16 is a cross-sectional view of the power semiconductor module 906 viewed from a plane passing through AA ′ in FIG. 15. FIG. 16 is a cross-sectional view of the power semiconductor module 906 viewed from a plane passing through the dotted line DD ′ in FIG. 15, and the upper arm IGBT 100U in the depth direction is omitted.

First embodiment
An example of the power semiconductor module according to this embodiment will be described with reference to FIGS.

FIG. 1 is a perspective view of a power semiconductor module 901 relating to the present embodiment. FIG. 2 is a circuit configuration diagram of the power semiconductor module 901 shown in FIG.
A heat radiation surface 42 located on the front surface and a heat radiation surface 43 (not shown) located on the back surface are heat radiation surfaces of the power semiconductor module 901 and face each other. Further, the gate terminal 21 and the sense emitter terminal 25 constituting the control terminal, and the emitter terminal 22 and the collector terminal 23 constituting the power terminal through which the main current flows are drawn in the same direction. The sealing portion 11 is filled in a region excluding the gate terminal 21, the emitter terminal 22, the collector terminal 23, the sense emitter terminal 25, the heat radiation surface 42, and the heat radiation surface 43.

  FIG. 3 is a perspective view in which the sealing material 11 is removed from the power semiconductor module 901 of FIG. In the present embodiment, two IGBTs 100 and two diodes 110 are provided as power semiconductor devices mounted on the power semiconductor module 901. Two IGBTs 100 and two diodes 110 are disposed between the ceramic substrate 12 and the ceramic substrate 13. The ceramic substrate 12 is provided with an emitter circuit 202 (described later in FIG. 5) constituting a circuit pattern on the side where the IGBT 100 and the diode 110 are disposed, and a heat radiating portion 402 on the side opposite to the IGBT 100 and the diode 110. Further, the ceramic substrate 12 is provided with a ceramic insulating layer 302 between the emitter circuit 202 and the heat radiating portion 402. The ceramic substrate 13 is provided with a collector circuit 203 (described later in FIG. 5) constituting a circuit pattern on the side where the IGBT 100 and the diode 110 are disposed, and a heat radiating portion 403 (not shown) on the opposite side to the IGBT 100 and the diode 110. Provide. Further, the ceramic substrate 13 is provided with a ceramic insulating layer 303 between the emitter circuit 203 and the heat radiating portion 403.

  FIG. 4 is a perspective view of the IGBT 100 according to the present embodiment. An emitter electrode 102 serving as a main electrode and a gate electrode 101 serving as a control electrode are provided on the front surface side of the IGBT 100, and a collector electrode 103 serving as a main electrode is provided on the back surface side.

  Since the emitter electrode 102 supplies a large current, the emitter electrode 102 has a larger occupied area than the gate electrode 101. In this embodiment, the control electrode on the surface of the IGBT 100 is only the gate electrode 101, but a plurality of control electrodes such as a sense emitter electrode and a thermistor electrode may be provided. Also in this case, the configuration according to this embodiment described later can be applied to the gate electrode 101. Further, the present invention can be similarly applied even when the IGBT 100 is a MOSFET.

  FIG. 5 is a perspective view of the power semiconductor module 901 excluding the heat radiation part 402 and the insulating layer 302 of the ceramic substrate 12 shown in FIG. The collector electrode 103 (not shown in FIG. 5) of the IGBT 100 and the cathode electrode 113 (not shown in FIG. 5) of the diode 110 are electrically connected to the collector circuit 203. The emitter electrode 102 (see FIG. 3) of the IGBT 100 and the anode electrode 112 (see FIG. 3) of the diode 110 are electrically connected to the emitter circuit 202. The gate electrode 101 of the IGBT 100 is electrically connected to the gate circuit 201 via the protrusion 201A. The emitter terminal 22, the emitter sense terminal 25, the gate terminal 21, the gate circuit 201, and the emitter circuit 202 are mechanically connected and integrated with the insulating layer 302 shown in FIG.

6 is a cross-sectional view of the dotted line AA ′ portion of FIG.
The collector electrode 103 of the IGBT 100 is electrically joined to the collector circuit 203 via the metal joint 803. The emitter electrode 102 of the IGBT 100 is electrically joined to the emitter circuit 202 via the metal joint 802 and the protrusion 202A. The gate electrode 101 of the IGBT 100 is electrically joined to the gate circuit 201 via the protrusion 201A and the metal joint 801.

  The protrusion 201A is disposed at a position where one end thereof faces the gate electrode 101. The protrusion 201A extends from one end of the protrusion 201A to the gate circuit 201 and is connected to the gate circuit 201. In the present embodiment, the protrusion 201A is mechanically integrated with the gate circuit 201, and specifically, may be formed by bending a single conductive plate.

  The heat generated in the active part of the IGBT 100 passes through two paths: a path for transferring heat through the ceramic substrate 13 and a path for transferring heat through the ceramic substrate 12 from the protrusion 202A in the vertical direction. A power semiconductor module having such two heat dissipation paths is defined as a double-sided cooling type power semiconductor module.

  Since a large current flows, the protrusion 202A, which is a junction between the emitter electrode 102 and the emitter circuit 202 that generate a large amount of heat, serves as a heat dissipation path, so that a space is not formed as much as possible in the vertical direction. On the other hand, the protrusion 201A, which is a junction of the gate electrode 101 where no large current flows, has a structure in which a space is formed in the vertical direction.

  The protrusion 202A provided in the emitter circuit 202 has a function of controlling the insulation distance between the emitter circuit 202 and the collector circuit 203 determined from the insulation characteristics of the sealing material 11. Further, the protruding portion 202A is configured to be installed in parallel to the emitter circuit 202 as described below so that the insulation distance between the gate circuit 201 and the collector circuit 203 can be controlled simultaneously.

  The protruding portion 202A has a width and depth of the installation surface larger than the thickness so that it can be self-supporting during the joining process. Next, the thickness of the protruding portion 202A is made larger than the thickness of the metal joint portion 802 so that the inclination and thickness variation during joining are reduced. Furthermore, in order to improve assemblability, the width and depth of the installation surface of the protrusion 202A to the emitter electrode 102 are made smaller than those of the emitter electrode 102.

  For the protrusion 202A, it is desirable to select copper, aluminum, molybdenum, tungsten, carbon, an alloy thereof, or a composite material with high thermal conductivity so as to have low electrical resistance and low thermal resistance. Moreover, you may install them and you may install the low thermal expansion intermediate | middle layer with respect to copper or aluminum. In this embodiment, the intermediate layer is omitted.

  For the insulating layer 302 and the insulating layer 303, aluminum nitride, silicon nitride, alumina, or the like with high withstand voltage is used. In particular, aluminum nitride or silicon nitride having high thermal conductivity is desirable. The thicknesses of the insulating layer 302 and the insulating layer 303 are set in the range of 0.1 to 1.5 mm in accordance with the insulating characteristics required for the power semiconductor module. Further, by making the insulating layer 302 and the insulating layer 303 have the same thickness, the deformation due to the thermal stress of the power semiconductor module can be reduced. It is also possible to use a sheet-like structure in which a resin is matrixed as the insulating layer 302 and the insulating layer 303 and a high thermal conductive filler such as alumina, boron nitride, yttria, or aluminum nitride is mixed. However, when a resin is used, a process of attaching after joining the metal joints 801 to 803 is desirable from the viewpoint of heat resistance.

  For the emitter circuit 202 and the collector circuit 203 on which the emitter electrode 102 and the collector electrode 103, which are the main electrodes of the IGBT 100, are mounted, copper, aluminum, or an alloy thereof having a low electric resistance is used. Between the insulating layer 302 and the insulating layer 303, which have lower thermal expansion than the circuit, an intermediate layer made of molybdenum, tungsten, carbon, or a composite material of these materials and copper or aluminum, which has low thermal expansion and high thermal conductivity, is installed. May be. In this embodiment, the intermediate layer is omitted. The thicknesses of the emitter circuit 202 and the collector circuit 203 are set in the range of 0.2 to 2.0 mm according to the required current capacity.

  For the heat radiating portion 402 and the heat radiating portion 403, copper, aluminum, or an alloy thereof having high thermal conductivity is used. Similarly to the circuit side, molybdenum, tungsten, or carbon having a low thermal expansion and high thermal conductivity between the heat dissipating part 402 and the heat dissipating part 403 and the insulating layer 302 and the insulating layer 303, or a composite of these materials and copper or aluminum. An intermediate layer made of a material may be provided. In this embodiment, the intermediate layer is omitted.

  The emitter circuit 202 and the collector circuit 203 are bonded to the heat radiation part 402 and the heat radiation part 403 using, for example, a brazing material that can be firmly bonded to the insulating layer 302 and the insulating layer 303. At this time, it is better to make the thermal stress obtained from the thermal expansion coefficient difference and the Young's modulus of the emitter circuit 202 and the collector circuit 203, the heat radiating part 402 and the heat radiating part 403 across the insulating layer 302 and the insulating layer 303 equal. desirable. For example, when the emitter circuit 202 and the collector circuit 203 and the heat dissipating part 402 and the heat dissipating part 403 are made of materials having the same composition, the shapes are made close to each other. In addition, by reducing the width of the emitter circuit 202 and the collector circuit 203, the heat radiating portion 402, and the heat radiating portion 403, or both of the widths of the insulating layer 302 and the insulating layer 303, the sealing portion 11 It is desirable to set a long creepage distance.

For the sealing part 11, for example, a resin based on adhesive novolak, polyfunctional, biphenyl, phenol type epoxy resin, acrylic, silicon, bismaleimide triazine, cyanate ester may be used. it can. These resins contain ceramics such as SiO _2, Al ₂ O _3, AlN, and BN, fillers such as rubber, and the thermal expansion coefficient is made close to that of IGBT 100, gate circuit 201, emitter circuit 202, and collector circuit 203. Reduce the difference in thermal expansion coefficient. By using such a resin, the thermal stress generated as the temperature rises in the usage environment is significantly reduced, so that the life of the power semiconductor module 901 can be extended. In the case where a low thermal expansion material is used for the circuit member and the thermal stress is reduced, silicone gel or the like can be used.

  Before sealing the sealing part 11 with the above-mentioned resin, a process for improving the adhesion strength between the sealing material 11 and the circuit, terminal, ceramic insulating layer, heat dissipation part, semiconductor chip, and metal bonding part is performed. It is better to apply. For example, a method of forming a coating film such as polyamideimide or polyimide is employed.

  For the metal joints 801 to 803 for joining the gate electrode 101, the emitter electrode 102, and the collector electrode 103, for example, a low-temperature sintered joint material mainly composed of solder material, fine metal particles, and metal oxide particles is used. As the solder material, a solder whose main component is tin, bismuth, zinc, gold or the like whose melting point is higher than the curing temperature of the sealing material 11 can be used. As the metal oxide particles, metal oxides that can be reduced at a low temperature equivalent to solder materials such as AgO, Ag2O, and CuO can be used. When AgO, Ag2O, or CuO is used, the metal joint becomes a sintered silver or sintered copper layer.

  The emitter circuit 202 and the gate circuit 201 of the ceramic substrate 12 form a circuit pattern by etching after bonding to the insulating layer 302, or a punched circuit pattern is formed by pressing before bonding. The protrusion 201A provided on the gate circuit 201 side can be manufactured by bending the emitter circuit 202 and the heat radiating portion 402 to the insulating layer 302 as a non-bonded portion that does not supply brazing material.

  Below, the effect obtained by this embodiment is demonstrated.

  During the production of the ceramic substrate 12, a circuit pattern can be produced by etching after joining the emitter circuit 202 and the gate circuit 201, pressing before joining, or the like, and positioning in the in-plane direction with high accuracy.

  The gate circuit 201 is firmly bonded to the insulating layer 302 by a brazing material, and the height can be adjusted with high accuracy when the protrusion 201A is formed by bending. For example, when the protrusion 201A and the protrusion 202A are joined and formed using a brazing material having a melting point higher than that of solder, the symmetry changes on the front and back of the insulating layer 302, and the ceramic substrate 12 warps. On the other hand, as in this example, by producing the protrusion 201A by bending, there is no change in volume on the circuit side before and after bending, so that the solder material, fine metal particles, and metal oxide particles are mainly used again. Even if the temperature rises during the joining of the IGBT 100 with a low-temperature sintered joining material or the like, the warpage change of the substrate is small and the assemblability is improved.

  Similar to the protrusion 202A, when the metal bonding members are installed on both sides in the same manner as the protrusion 202A, there is a problem that the protrusion 201A cannot stand on its own. For example, if the gate electrode of the IGBT 100 is not temporarily fixed to the ceramic substrates 12 and 13, misalignment occurs when the solder material installed on the upper and lower sides of the spacer melts, and the gate electrode 101 and the emitter electrode 102 are displaced. Therefore, it is necessary to improve the assembling property for short circuit defects. On the other hand, in the present embodiment, since the protruding portion 201A is mechanically integrated with the gate circuit 201, positional deviation does not occur and excellent assemblability is achieved.

  For example, when an insulating catching material is used for positioning between the protrusion 201A and the protrusion 202A, heat resistance equal to or higher than the solder joint temperature is required. The insulating resin that can be used is limited from the viewpoint of heat resistance. In addition, when insulating and high melting point ceramics are used as the trapping material, it is necessary to ensure insulation between the ceramics and the metal protrusions 201A and 202A. In order to prevent the ceramic and metal from peeling off, bonding at a high temperature is required as with the ceramic substrate 12 and the ceramic substrate 13. If jointing at a high temperature is required separately, improvement in productivity is required.

  On the other hand, when using auxiliary materials, after mounting IGBT 100 on ceramic substrate 12 or ceramic substrate 13, assembly to fill without voids so that insulation can be secured even when sealing with sealing material 11 Improvement is required. When the above-mentioned insulating auxiliary material is used, it becomes difficult to fill without voids in a state including the auxiliary material. It is necessary to provide a space where the sealing material 11 can be filled between the auxiliary material and the IGBT 100. In particular, if the sealing material 11 contains a filler, it becomes difficult because the filling property is lowered. That is, it is difficult to ensure both the shape of the auxiliary material for taking up the space and ensuring the positional accuracy of the protrusion 201A. On the other hand, if the protrusion 201A is mechanically integrated with the gate circuit as in the present embodiment, the assembling property for ensuring the insulation can be improved.

  In this embodiment, unlike the protrusion 202A provided in the vertical direction of the emitter electrode 102, the protrusion 201A provided on the gate circuit 201 side protrudes at an angle with respect to the vertical direction. By projecting at an angle in this way, a space is formed on the joint portion of the projection 201A and the gate circuit 201 side. For example, when solder is used as a bonding material for bonding the protruding portion 201A and the gate electrode 101, the metal bonding portion 801 may wrap around the space even if the positional relationship with the protruding portion 202A is shifted and excessive solder is generated. It is possible to prevent a short circuit failure and improve the assemblability.

  In particular, by performing plating for improving the bondability, surplus solder wets along the protruding portion 201A, and the effect of preventing short-circuit defects is increased. Types of plating include Ni, Pd, Ag, Au, and solder plating. The protrusion 201A may form a through hole in a projection projection surface with the gate electrode 101. Thereby, it becomes easy to go around to the space provided immediately above. There may be a plurality of through holes, and the shape may be a cylinder or a rectangular parallelepiped.

  In particular, by providing a vent portion at a part of the protrusion 201A, the lower portion (side closer to the gate electrode 101) of the protrusion 201A can move upward and downward. Thereby, even if the supply amount of the bonding material changes, it is possible to prevent short-circuit failure and open failure, and to improve assemblability. In this embodiment, since the protrusion 201A is provided with an angle and protrudes toward the gate electrode 101, the vent portion can be easily provided.

  On the other hand, in the case of using a low-temperature sintered bonding material mainly composed of fine metal particles and metal oxide particles as the bonding material, the volume decreases before and after bonding (sintering). In particular, application of pressure at the time of bonding is effective for improving the sintered density. Therefore, the metal joint 802 of the emitter electrode 102 and the metal joint 803 of the collector electrode 103, which require high heat dissipation characteristics, are provided with protrusions 202A in the vertical direction so that the applied pressure can be effectively applied. Next, since the projecting portion 201A is provided with a space portion so that it can be moved up and down even if the position of the projecting portion 202A changes, it is shaped so as not to be joined.

  By joining the gate electrode 101 with a solder joint or a sintered metal part instead of the conventional wire bonding, the joint area can be increased and the thermal stress can be reduced, thereby improving the power cycle tolerance.

  In addition, it is desirable that the metal joint portion 802 and the metal joint portion 803 be sintered silver or sintered copper that becomes a joint portion having high thermal conductivity. Since the protrusion 201A is provided on the gate circuit 201 side and a space is provided on the protrusion 201A, the metal joints 802 and 803 may be made of sintered silver or sintered copper, and the metal joint 801 may be a solder material. Is possible.

  As described above, the emitter circuit 202 and the gate circuit 201 of the ceramic substrate 12 can be formed in the in-plane direction by forming a pattern by etching after bonding to the insulating layer 302 or by forming a punching pattern with a press or the like before bonding. Positioning can be performed with high accuracy.

  High-precision projection 201A on the gate circuit 201 side eliminates the wire bonding process to the gate electrode 101 and allows the ceramic substrate 12 and the ceramic substrate 13 to be bonded to the IGBT 100 simultaneously, improving productivity and assembly. To do.

  Further, the symmetry between the upper ceramic substrate 12 and the lower ceramic substrate 14 sandwiching the IGBT 100 is improved, and the size can be reduced, and the reliability against thermal stress is improved.

  By bonding the gate electrode 101 via the metal bonding portion 801 with the protrusion 201A connected to the gate circuit 201 instead of the conventional wire bonding, the bonding area can be increased and the thermal stress can be reduced, and the power cycle resistance can be improved. .

  For example, a protrusion 201A with a thickness of 0.5 to 5 mm, which cannot be secured by the thickness of gold bumps or solder joints, can be formed, and an insulation distance between the gate circuit 201 and the collector circuit 203 can be secured. It becomes possible to improve.

  A manufacturing process of the power semiconductor module 901 according to the present embodiment will be described with reference to FIGS.

  FIG. 7 is a perspective view showing an assembly process for mounting the IGBT 100 and the diode 110 on the ceramic substrate 12 and the ceramic substrate 13. Here, the gate terminal 21, the sense emitter terminal 25, the emitter terminal 22, and the collector terminal 23 are integrated on the ceramic substrate 12 side by the tie bar 20 and are drawn out in the same direction and the same plane.

  The IGBT 100 and the diode 110 are mounted on the circuit portions of the ceramic substrate 12 and the ceramic substrate 13 via metal joints 801 to 803. Further, the collector terminal 23 is mounted on the collector circuit 203 via the metal joint 804. The collector electrode 103 of the IGBT 100 and the cathode electrode 113 of the diode 110 are mounted in parallel on the collector circuit 203 of the ceramic substrate 13. The emitter electrode 102 of the IGBT 100 and the anode electrode 112 of the diode 110 are mounted in parallel to the emitter circuit 202 of the ceramic substrate 12 via the protrusion 202A and the metal joint 802.

  At this time, the width and height of the mounting surface of the emitter electrode 102 of the IGBT 100 and the anode electrode 112 of the diode 110 are made larger than the thickness of the projection 202A, and the thickness of the metal joint 802 is made smaller than the thickness of the projection 202A. Thus, the protrusion 202A can be made independent.

  As for the gate electrode 101 of the IGBT 100, the gate circuit 201 of the ceramic substrate 12 has a protruding portion 201A and is bonded via a metal bonding portion 801. The protrusion 201A is mechanically and electrically integrated with the gate circuit 201. Further, the gate circuit 201 and the emitter circuit 202 are fixed to the insulating layer 302, and the gate circuit 201 and the emitter circuit 202 are located on substantially the same plane after bonding.

  Further, the collector terminal 23 is integrated with the emitter terminal 22, the gate terminal 21 and the sense emitter terminal 25 fixed to the insulating layer 302 with the belt-like tie bar 20, so that the gate circuit and the emitter circuit are substantially omitted after joining. Located on the same plane.

  As described above, the allowable dimensional tolerance of the protrusion 201A with respect to the metal joint 801 of the gate electrode 101 of the IGBT 100 is made larger than the allowable dimensional tolerance of the protrusion 202A with respect to the metal joint 802 of the emitter electrode 102. With this configuration, the insulation distance between the emitter circuit 202 and the collector circuit 203 can be controlled with high accuracy by the protrusion 202A, and a manufacturing method for simultaneously controlling the insulation distance between the gate circuit 201 and the collector circuit 203 is possible. It becomes.

  FIG. 8 shows an external perspective view after the transfer molding process. The power semiconductor module 901 shown in FIG. 1 is completed by cutting the tie bar 20 after sealing the sealing portion 11 and ensuring insulation between the terminals.

  With the above configuration, the assemblability of the ceramic substrate 12 and the ceramic substrate 13 sandwiching the IGBT 100 is improved, so that the parallelism between the heat radiation part 402 and the heat radiation part 403 can be improved. As a result, the parallelism between the heat radiating surface 42 and the heat radiating surface 43 is also improved, and variations in the thickness of grease, carbon sheets, and the like when attached to the cooler are reduced, and the heat radiation performance of the power semiconductor module 901 is improved.

  In order to improve the parallelism between the heat radiation surface 42 and the heat radiation surface 43, the heat radiation surface 42 and the heat radiation surface 43 may be ground after being sealed with the sealing material 11. By sealing with the sealing material 11, the insulating layer 302, the insulating layer 303, the IGBT 100, and the diode 110 can be processed without causing mechanical damage.

  In this embodiment, the gate terminal 21, the sense emitter terminal 25, the emitter terminal 22, and the collector terminal 23 are integrated with the ceramic substrate 12 to improve the assemblability. As shown in FIG. 7, the gate terminal 21, the sense emitter terminal 25, the emitter terminal 22, and the collector terminal 23 have a belt-like tie bar 20 and are integrated.

  As in this embodiment, the gate terminal 21, the emitter terminal 22, the collector terminal 23, and the sense emitter terminal 25 are drawn from the same plane. Thereby, when installing the sealing material 11 in the transfer mold, the position between the terminals can be positioned with high accuracy. When the displacement occurs, excessive stress occurs during resin leakage or mold clamping.

  Since the gate terminal 21, emitter terminal 22, collector terminal 23, and sense emitter terminal 25 are formed by the emitter circuit 202 of the ceramic substrate 12, high-accuracy positioning is possible. Stress generation can be prevented. The plurality of terminals described above may be prepared separately or separately on both sides, but it is desirable to improve the assemblability by providing a band-shaped integral part 20 so as to be in the same plane.

  In the present embodiment, an example in which the gate terminal 21, the emitter terminal 22, the collector terminal 23, and the sense emitter terminal 25 are drawn from the same direction is shown. By adopting this shape, the outer volume of the power semiconductor module 901 including the terminals can be reduced. When the terminals are drawn out in the same direction, as shown in FIG. 3, the emitter terminal 22 and the collector terminal 23 can be drawn from the diode 110 side where the gate electrode 101 is unnecessary, so that the width of the lead terminal can be increased. Current can be increased. Further, the insulation distance between the emitter terminal 22 and the collector terminal 23 can be widened, and the power semiconductor module 901 can have a high breakdown voltage. The emitter terminal 22 and the collector terminal 23 can be pulled out in multiple branches. In this case, the inductance can be reduced by arranging the emitter terminal 22 and the collector terminal 23 alternately.

  In the present embodiment, the gate terminal 21 is drawn out in the same direction as the emitter terminal 22 and the collector terminal 23 constituting the power terminal, but can be drawn out in the opposite direction. Even in this case, it is desirable to apply the present configuration so that the emitter terminal 22, the collector terminal 23, and the gate terminal 21 are located on the same plane, and it can be manufactured with high accuracy.

  In the present embodiment, the gate terminal 21 is prepared for each IGBT 100, but the gate terminal 21 may be shared by a plurality of IGBTs 100. Further, although the gate terminal 21 and the power terminal are drawn out in the same direction, they can be drawn out in the opposite directions. Even in this case, it is desirable that the power terminal and the gate terminal be positioned in the same plane by applying this configuration, and the power terminal and the gate terminal can be manufactured with high accuracy.

<< First Modification of First Embodiment >>
A modification of the power semiconductor module 902 having excellent assemblability and insulation will be described with reference to FIGS.

  The outer shape of the power semiconductor module 902 shown in FIGS. 9 to 11 is the same as that of FIG. FIG. 9 is a cross section taken along the line AA ′ of FIG. 1, and shows a cross section in which the gate terminal 21 is drawn from the sealing material 11. The lead portion 212 connects the gate circuit 201 and the gate terminal 21. The lead-out portion 212 is provided with a creeping portion 213 that faces the insulating layer 302 and is bent further downward than the gate circuit 201. Further, a bent portion 211 formed in the lead portion 212 is disposed in a space between the insulating layer 302 and the insulating layer 303. The end 214 of the collector circuit 203 is further reduced in the horizontal direction than FIG. 4 so as not to face the bent portion 211. Thereby, a sufficient insulation distance between the collector circuit 203 and the lead-out portion 212 is ensured. Note that. The reduction in the horizontal direction can be made with high accuracy by the above-described pattern etching.

  FIG. 10 is a cross section taken along the line BB ′ of FIG. 1 and shows a cross section in which the emitter terminal 22 is drawn from the sealing material 11. The emitter terminal 22 extends from the emitter circuit 202 and is provided with a bent portion 222 so that the lead portion 221 is disposed on the lower surface of the emitter circuit 202. The emitter terminal 22 is located on the same plane as the gate terminal 21. Also in the vicinity of the emitter terminal 22, the end portion 220 of the collector circuit 203 is reduced in the horizontal direction in order to secure an insulation distance with respect to the lead portion 221 and the bent portion 222. That is, the collector circuit 203 is formed so that the end portion 220 does not face the lead portion 221 and the bent portion 222 when viewed from the arrangement direction of the insulating layer 302 and the insulating layer 303. The reduction in the horizontal direction can be made with high accuracy by the above-described pattern etching.

  FIG. 11 is a CC ′ cross section of FIG. 1 and shows a cross section in which the collector terminal 23 is drawn from the sealing material 11. The collector terminal 23 is located at the same height as the emitter terminal 22 and the gate terminal 21 illustrated in FIGS. Further, the collector terminal 23 is provided with a bent portion 223 so that the lead-out portion 224 is disposed above the collector circuit 203. The end portion 225 of the emitter circuit 202 is reduced in the horizontal direction in order to secure an insulation distance from the lead portion 224 and the bent portion 223. In this embodiment, since the circuit of the ceramic substrate 12 on the emitter side is the collector terminal 23, the end of the emitter circuit 202 is reduced in the horizontal direction. That is, the emitter circuit 202 is formed such that the end 225 does not face the lead portion 224 or the bent portion 223 when viewed from the arrangement direction of the insulating layer 302 and the insulating layer 303. When extending the separate body or the collector circuit 203, similarly to the above, the reduction in the horizontal direction can be made with high accuracy by the above-described pattern etching.

  The bent portion 223 is electrically joined to the collector circuit 203 and the metal joint portion 804. For the metal joint portion 804, for example, a solder material, a low-temperature sintered joint material containing fine metal particles or metal oxide particles, or the like is used.

  The emitter terminal 22 and the collector terminal 23 are drawn from the same height as the gate terminal 21, and an insulation distance is secured at a horizontal interval.

  Here, an example in which the bent portion 222 and the bent portion 223 are arranged in a space between the insulating layer 302 and the insulating layer 303 is shown. As a result, a long insulation creepage distance can be secured between the emitter circuit 202, the heat radiation part 402, and the collector circuit 203 and the heat radiation part 403, and the insulation performance can be improved.

  The emitter terminal 22 and the collector terminal 23 are provided with a bent portion 222 and a bent portion 223, and the heat radiating portion where the sealing material 11 is exposed by extending the lead portion 221 and the lead portion 224 to the vicinity of the center of the side surface of the sealing material 11. The insulation creepage distance between 402 and the heat radiation part 403 can be increased, and the insulation reliability of the power semiconductor module 902 can be improved.

  In this embodiment, since the gate terminal 21, the emitter terminal 22, the collector terminal 23, and the sense emitter terminal 25 are formed by the emitter circuit 202 of the ceramic substrate 12, high-accuracy positioning is possible, and resin leakage and mold clamping are possible. It is possible to prevent the occurrence of stress at the time. Furthermore, since the bent portion is provided in the lead terminal that needs to be clamped, the stress on the IGBT, the diode mounting portion, and the ceramic insulating layer can be relieved, and assemblability is improved.

<< Modification 2 of First Embodiment >>
FIG. 12 is a power semiconductor module 903 according to this embodiment, and is a cross-sectional view taken along the line AA ′ of FIG. The outer shape of the power semiconductor module 903 according to this embodiment is the same as that shown in FIG.

  The embodiment of the modification 2 is different from the first embodiment in that a part of the gate circuit 201 is skived and shaved to form the protrusion 201B.

  The protrusion 201B is formed by scraping the gate circuit 201 of the ceramic substrate 12 by skiving before mounting the semiconductor chip (IGBT 100 or the like). Since the gate circuit 201 can be processed with high accuracy by pattern etching, the position of the protrusion 201B formed thereby can be formed with high accuracy. Further, since the current flowing through the gate circuit 201 is smaller than the current flowing through the emitter circuit 202, there is no problem even if the cross-sectional area of the circuit is reduced.

  Thus, the protrusion 201B is mechanically and electrically integrated with the gate circuit 201. Further, the protrusion 201B has an angle with respect to the contact surface between the gate circuit 201 and the insulating layer 302 and is formed toward the gate electrode 101.

  The end portion 226 of the protrusion 201B is extended to a position facing the top surface of the gate electrode 101. The end 226 is disposed at the lowest position in the gate circuit 201 and the protrusion 201B. A space is provided between the gate electrode 101 and the gate circuit 201 by the protrusion 201B. In addition, the allowable dimension range of the metal joint portion 801 that serves as a joint portion between the gate electrode 101 and the protrusion 201B can be improved.

  Further, a through-hole may be formed in a member constituting the ceramic substrate 12 so as to make it easier to go around the space portion. Furthermore, plating that improves the bondability can be applied. Types of plating include Ni, Pd, Ag, Au, and solder plating.

  Furthermore, an adjustment mechanism in the vertical direction may be provided below the vent portion by providing a vent portion in the protruding portion 201B. With this configuration, the allowable dimension range of the metal joint 801 due to the variation in the distance between the protrusion 201B and the gate electrode 101 can be increased, and the assemblability is improved.

  In the formation of the protruding portion 201B by skiving, it is possible to give a margin to the length of the protruding portion 201B by disposing it at the same position as the lead terminal 21.

  By installing the above-mentioned protrusion 201B on the gate circuit 201 side of the ceramic substrate 12, the ceramic substrate 12 and the ceramic substrate 13 can be bonded to the IGBT 100 simultaneously, and the wire bonding process to the gate electrode 101 can be omitted, thereby improving productivity. improves.

<< Modification 3 of First Embodiment >>
FIG. 13 is a power semiconductor module 904 according to this embodiment, and is a cross-sectional view taken along the line AA ′ of FIG. The outer shape of the power semiconductor module 903 according to this embodiment is the same as that shown in FIG.

  The embodiment of the modification 3 is different from the first embodiment in that the protrusion 201C is formed by a bonding wire bonded to the gate circuit 201.

  The protrusion 201C is configured by a copper or aluminum wire so as to be connected to the gate circuit 201 by the ultrasonic bonding 701. In the case of a copper wire, it can be joined to the metal joint 801 as it is. In the case of an aluminum wire, plating is performed before joining to the metal joint 801. The copper wire can also be plated to improve bondability. Types of plating include Ni, Pd, Ag, Au, and solder plating. The diameter of the wire is several tens to several hundreds of μm, and is set in a range in which everything reacts at the time of joining with the metal joint 801 and does not dissolve.

  One end of the protrusion 201C is connected to the gate circuit 201 and extends to the vicinity of the gate electrode 101. Further, the protrusion 201C is bent in the space facing the gate electrode 101, extends to the gate circuit 201, and the other end is connected to the gate circuit 201. Thereby, the allowable dimension range of the metal joint portion 801 that becomes the joint portion between the gate electrode 101 and the protrusion 201C can be improved.

  In addition, by forming the protruding portion 201C in a loop shape with a bonding wire that can be elastically deformed, an adjustment mechanism in the vertical direction can be provided to the gate electrode 101 without providing a vent portion separately, and assemblability is improved.

  The gate circuit 201 is manufactured by pattern etching, and the protrusion 201C is bonded by ultrasonic bonding 701, so that it has high positional accuracy in the in-plane direction.

  In the case where the gate circuit 201 and the protrusion 201C are ultrasonically bonded, it is possible to increase the output and the pressing load, compared to the case where the gate electrode 101 and the protrusion 201C of the IGBT 100 are ultrasonically bonded. As a result, the ultrasonic bonding portion 701 can have a highly reliable bonding strength.

  In addition, the difference in thermal expansion coefficient between the protrusion 201C made of a metal wire and the gate circuit 201 is small. As a result, the thermal stress of the ultrasonic bonded portion that occurs as the temperature rises is smaller than when wire bonding is performed to the IGBT 100 having a low coefficient of thermal expansion.

  The protrusion 201C provided on the gate circuit 201 side with high accuracy can omit the wire bonding step to the gate electrode 201, and the productivity and assemblability are improved.

<< Modification 4 of the first embodiment >>
FIG. 14 is a power semiconductor module 905 according to this embodiment, and is a cross-sectional view taken along the line AA ′ of FIG. The outer shape of the power semiconductor module 905 according to the present embodiment is the same as FIG.

  In the embodiment of Modification 4, the protrusion 201D joined to the gate circuit 201 is different from the above-described embodiments in that it has a lead shape.

  The protrusion 201D can be manufactured with high accuracy by a press or the like. Further, the thickness and diameter of the protrusion 201D are in the range of several tens to several hundreds of μm, and are in a range in which everything reacts at the time of joining with the metal joint 801 and does not dissolve. Further, the protrusion 201D is made of copper or aluminum so that ultrasonic bonding can be performed with the gate circuit 201.

  When the protrusion 201D is a copper lead, it can be joined to the metal joint 801 as it is. Further, when the protrusion 201D is an aluminum lead, plating capable of being bonded to the metal bonding portion 801 is performed. Other than the ultrasonic bonding portion 701 may be plated first. Types of plating include Ni, Pd, Ag, Au, and solder plating.

  One end of the protrusion 201D is connected to the gate circuit 201 and extends to a space facing the gate electrode 101, and the other end is connected to the gate electrode 101. By raising the protrusion 201D so as to provide a space between the gate circuit 201 and the gate electrode 101, the allowable dimension range of the metal joint 801 can be improved. Further, a vent portion may be provided in the middle of the protruding portion 201D. The gate circuit 201 is manufactured by pattern etching, and the protrusion 201D is bonded by the ultrasonic bonding 701, thereby having high positional accuracy in the in-plane direction.

  The wire bonding process to the gate electrode 201 can be omitted by the protrusion 201D provided with high precision on the gate circuit 201 side. When the ceramic substrate 12 and the ceramic substrate 13 are bonded to the IGBT 100, the gate electrode 101 can be bonded at the same time, so that productivity and assemblability are improved.

<< Second Embodiment >>
A power semiconductor module 906 according to another embodiment of the present invention will be described with reference to FIGS. FIG. 15 is an external perspective view of the power semiconductor module 906 according to the present embodiment. FIG. 16 is a 2in1 circuit configuration diagram corresponding to the power semiconductor module 906. In this embodiment, two IGBTs 100 and two diodes 110 are mounted. The power semiconductor module 906 is a series of an upper arm IGBT 100U and a lower arm IGBT 100L. Upper arm diode 110U is electrically connected in parallel with upper arm IGBT 100U, and lower arm diode 110L is electrically connected in parallel with lower arm IGBT 100L. Further, the heat radiating surface 42 and the heat radiating surface 43 are formed on the front and back surfaces of the power semiconductor module 906. Also, the upper arm gate terminal 21U, the lower arm gate terminal 21L, the upper arm sense emitter terminal 25U, the lower arm sense emitter terminal 25L, the lower arm emitter terminal 22L functioning as a direct current negative electrode connection terminal, and a direct current positive electrode connection terminal The upper arm collector terminal 23U that functions as an intermediate terminal 24M and the intermediate terminal 24M that functions as an AC connection terminal are drawn out from the sealing portion 11 in the same direction.

  FIG. 17 is a perspective view of the power semiconductor module 906 excluding the sealing portion 11, the insulating layer 302 of the ceramic substrate 12, and the heat dissipation portion 402. FIG. 18 is a cross-sectional view of the power semiconductor module 906 viewed from a plane passing through AA ′ in FIG. The collector electrode 103U of the upper arm IGBT 100U and the cathode electrode 113U of the upper arm diode 110U are connected to the upper arm collector circuit 203U. The emitter electrode 102U of the upper arm IGBT 100U and the anode electrode 112U of the diode 110U are connected to the upper arm emitter circuit 202U. Although not shown, the collector electrode 103 of the lower arm IGBT 100L and the cathode electrode 113 of the diode 110L are connected to the collector circuit 203L for the lower arm, and the emitter electrode 102 of the lower arm IGBT 100U and the anode electrode 112 of the diode 110U are It is connected to the lower arm emitter circuit 202L. The upper arm IGBT 100U and the lower arm IGBT 100L are provided with a sense emitter electrode and connected to the sense emitter circuit 205U in the same manner as the gate electrode 101U. On the other hand, the difference from the first embodiment is that the upper-arm sense emitter circuit 202U and the lower-arm collector circuit 203L are connected via an intermediate electrode 202M. In this way, the upper arm circuit and the lower arm circuit are electrically connected by the intermediate electrode 202M, and an upper and lower arm series circuit as shown in FIG. 16 is formed.

  The upper arm IGBT 100U and the upper arm diode 110U are mounted on a gate circuit unit 201U, an emitter circuit unit 202U provided on the ceramic substrate 12, and a collector circuit unit 203U provided on the ceramic substrate 13. Since the mounting structure and method on the gate electrode 101U are the same as those in the first embodiment, they are omitted here.

  FIG. 19 is a cross-sectional view of the power semiconductor module 906 as seen from the plane passing through the dotted line DD ′ in FIG. 15, and the upper arm IGBT 100U in the depth direction is omitted. The upper arm emitter circuit 202U is electrically joined to the intermediate electrode 202M via a metal joint 804. The intermediate electrode 202M has a configuration in which the emitter circuit 202202U is extended and bent. The intermediate electrode 202M has a shape having a space in the upper portion, similar to 201A for joining the gate electrodes. The allowable dimension tolerance for the metal joint portion 804 of the intermediate electrode 202M is larger than the allowable dimension tolerance for the metal joint portion 802 of the protrusion 202A.

  Further, the lower arm emitter circuit 202L and the upper arm collector circuit 203L facing the intermediate electrode 202M are reduced in the horizontal direction in order to secure an insulation distance. As a result, it is not necessary to secure the insulation distance between the protrusions 202A between 202U / 203U and 202L / 203L more than necessary, and the power semiconductor module 906 can be downsized.

  The protruding portion 202A has a shape capable of controlling the position of the emitter / collector circuits of the upper and lower arms in parallel. The allowable dimensional tolerance is improved so that the intermediate electrode 202M and the protrusion 201A do not interfere with each other. Also, the emitter circuit 202U and the emitter circuit 202L of the upper and lower arms are integrated with the ceramic insulating layer 302, and the collector circuit 203U and the collector circuit 203L of the upper and lower arms are integrated with the insulating layer 303, so that It has a configuration with reduced flutter between arms. As a result, the heat radiating surface 42 and the heat radiating surface 43 can be made parallel, and variations in the thickness of grease, carbon sheets, and the like when attached to the cooler are reduced, and the heat dissipation performance of the power semiconductor module 906 is improved.

The protruding portion 202A has a shape capable of controlling the position of the emitter / collector circuits of the upper and lower arms in parallel. The allowable dimensional tolerance is improved so that the intermediate electrode 202M and the protrusion 201A do not interfere with each other. As a result, it is possible to increase the current of the power semiconductor module 906 due to the increase in the number of mounted semiconductor chips, and to improve the assemblability when the breakdown voltage of the power semiconductor module 906 is increased by increasing the thickness of the protrusion 202A.
The protruding portions 201A to 201D described in the above-described embodiment are formed along the protruding direction of the protruding portion 202A. The protrusions 201A to 201D have a function and structure for adjusting the height of the protrusions 201A to 201D in the protrusion direction. As the structure to be adjusted, a bent portion obtained by bending a part of the protruding portions 201A to 201D may be used.

11 ... Sealing part, 12 ... Ceramic substrate, 13 ... Ceramic substrate, 20 ... Tie bar, 21 ... Gate terminal, 21U ... Upper arm gate terminal, 21L ... Lower arm gate terminal, 22 ... Emitter terminal, 22L ... Lower arm emitter terminal , 23 ... Collector terminal, 23U ... Upper arm collector terminal, 24: Intermediate terminal, 24M ... Intermediate terminal, 25 ... Sense emitter terminal, 25U ... Upper arm sense emitter terminal, 25L ... Lower arm sense emitter terminal, 42 ... Heat dissipation surface, 43 ... Heat dissipation surface, 100 ... IGBT, 100U ... Upper arm IGBT, 100L ... Lower arm IGBT, 101 ... Gate electrode, 102 ... Emitter electrode, 102U ... Emitter electrode, 103 ... Collector electrode, 103U ... Collector electrode, 110 ... Diode, 110U ... Upper arm diode, 110L ... Lower arm diode, 112 ... Anode electrode, 112U ... Anode electrode, 113 ... Cathode electrode, 113U ... Cathode electrode, 201 ... Gate circuit, 201A ... Projection, 201B Projection, 201C ... Projection, 201D ... Projection, 202 ... Emitter circuit, 202A ... Projection, 202U ... Emitter circuit, 202L ... Emitter circuit, 203 ... Collector circuit, 203U ... Collector circuit, 203L ... Collector circuit, 205U ... Sense emitter circuit, 211 ... bent portion, 212 ... lead-out portion, 213 ... creeping portion, 214 ... end portion, 220 ... end portion, 221 ... lead-out portion, 222 ... bent portion, 223 ... bent portion, 224 ... lead-out portion, 225 ... End, 226 ... End, 302 ... Insulating layer, 303 ... Insulating layer, 402 ... Heat sink, 403 ... Heat sink, 701 ... Ultrasonic bonding, 801 ... Metal bonding, 802 ... Metal bonding, 803 ... Metal Junction, 804 ... Metal junction, 901 ... Power semiconductor module, 902 ... Power semiconductor module, 903 ... Power semiconductor module, 904 ... Power semiconductor module, 905 ... Power semiconductor module, 906 ... Power semiconductor module

Claims (6)

A power semiconductor element;
An emitter conductor electrically connected to an emitter pad of the power semiconductor element via a metal bonding member;
A gate conductor connected to the gate pad of the power semiconductor element via a metal bonding member;
A first insulating substrate for mounting the emitter conductor and the gate conductor,
The emitter conductor has a protrusion that protrudes toward the emitter pad and is connected to the emitter pad through the metal bonding member;
The gate conductor has a protrusion formed along the protrusion direction of the protrusion,
The said protrusion part is a power semiconductor module which has an adjustment part which adjusts the height of the said protrusion part in the said protrusion direction. The power semiconductor module according to claim 1,
The projecting portion is a power semiconductor module connected by ultrasonic bonding on the gate conductor portion side. The power semiconductor module according to claim 1 or 2,
The power semiconductor module, wherein the adjustment part is a bent part obtained by bending a part of the protrusion. The power semiconductor module according to any one of claims 1 to 3,
A gate terminal connected to the gate conductor;
An emitter terminal connected to the emitter conductor;
And a collector terminal,
The power semiconductor module, wherein the gate terminal, the emitter terminal, and the collector terminal are formed such that a predetermined surface of the gate terminal, a predetermined surface of the emitter terminal, and a predetermined surface of the collector terminal are along the same plane. The power semiconductor module according to claim 4,
A sealing portion that seals a part of the gate terminal, a part of the emitter terminal, a part of the collector terminal, the power semiconductor element, and the first insulating substrate;
The power semiconductor module in which the gate terminal is provided with a bent portion so as to be drawn out from a central portion of a side surface of the sealing portion. The power semiconductor module according to claim 5,
A collector conductor electrically connected via a metal bonding member and a collect pad of the power semiconductor element;
A second insulating substrate for mounting the collector conductor;
The second insulating substrate is disposed such that the mounting surface of the collector conductor faces the mounting surface of the emitter conductor of the first insulating substrate,
The power semiconductor module, wherein the collector conductor is formed so as not to face the bent portion when viewed from a direction perpendicular to a mounting surface of the emitter conductor of the first insulating substrate.