EP4047648A1 - Power module with a power component bonded to a substrate by sintering and soldering and corresponding manufacturing method - Google Patents

Power module with a power component bonded to a substrate by sintering and soldering and corresponding manufacturing method Download PDF

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Publication number
EP4047648A1
EP4047648A1 EP21157873.7A EP21157873A EP4047648A1 EP 4047648 A1 EP4047648 A1 EP 4047648A1 EP 21157873 A EP21157873 A EP 21157873A EP 4047648 A1 EP4047648 A1 EP 4047648A1
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EP
European Patent Office
Prior art keywords
solder
sintering
sintered
area
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP21157873.7A
Other languages
German (de)
French (fr)
Inventor
Thomas Bigl
Stefan Pfefferlein
Claus Florian Wagner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to EP21157873.7A priority Critical patent/EP4047648A1/en
Priority to CN202180094091.8A priority patent/CN116888732A/en
Priority to EP21836119.4A priority patent/EP4248493A1/en
Priority to PCT/EP2021/085263 priority patent/WO2022174955A1/en
Publication of EP4047648A1 publication Critical patent/EP4047648A1/en
Withdrawn legal-status Critical Current

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Definitions

  • the invention relates to a power module comprising a substrate, an electrically conductive intermediate layer which is arranged on the substrate and which has a joining area produced by sintering, and at least one power component which is arranged on the intermediate layer and which has at least one with the Has interlayer connected connection point.
  • the invention relates to a respective electrical device having at least one respective power module of this type.
  • the invention relates to a method for producing such a power module.
  • Such devices and such a method are used in a large number of applications in power electronics.
  • sintering technology is increasingly being used to improve the service life of high-performance semiconductors when connecting the chip to the DCB (direct bonded copper) substrate.
  • the sinter deposits are usually produced using stencil printing with sinter paste. It is particularly important for small pads such.
  • B. a gate connection of a power semiconductor difficult to produce depots with a wet layer thickness of more than 120 microns. This has an effect above all when very large and very small depots have to be produced in one operation or in close proximity to one another.
  • Typical problems are uneven layer thicknesses, scooping of the paste out of the apertures, excess paste at the end of the aperture (formation of ends). or so-called "doggy ears”), air pockets and poor release behavior of the paste from the aperture.
  • One object of the invention is to provide an improved power module, a corresponding electrical device and a corresponding method which, in particular, overcome the disadvantages mentioned.
  • a solution to the problem results from a power module of the type mentioned at the outset in that the intermediate layer has a solder region in the region of the respective connection point which is produced by means of a solder preform and which is connected to the respective connection point.
  • the object is achieved by an electrical device of the type mentioned at the outset in that the electrical device has at least one such proposed power module.
  • the proposed power module includes a substrate on which an electrically conductive intermediate layer is arranged.
  • This intermediate layer has a joining area.
  • This is characterized in particular by the fact that the intermediate layer is produced there by means of sintering.
  • sintering is a process for the production or modification of materials. Fine-grained ceramic or metallic materials are heated - often under increased pressure - but the temperatures remain below the melting point of the main components.
  • a power component is arranged on the intermediate layer, which has at least one connection point, in particular in order to supply the power component with an electrical voltage or an electric current via the respective connection point. The respective connection point is connected to the intermediate layer, in particular electrically connected.
  • the sintered joining region can have a sintered core designed as a solid material, which has a sintered material on both sides, that is to say towards the power component and towards the substrate.
  • a layered, sintered joining area would also be conceivable, in which sintered material and solid material alternate in layers, e.g. sintered material-solid material-sintered material-solid material-sintered material.
  • the intermediate layer additionally has a solder area in the area of the respective connection point, which is connected, in particular electrically connected, to the respective connection point.
  • the respective solder area has solder on, ie a joining material that joins metals by soldering.
  • the solder consists, for example, of a mixture or alloy of different metals. Lead, tin, zinc, silver, antimony and copper are used particularly frequently for this purpose.
  • the respective soldering area is produced by means of a soldering preform.
  • a solder preform is in particular a solder preform or a solder molded part, for example a cuboid, cylinder, ring or the like in a desired size, especially made of solder alloys.
  • Such solder preforms are available, for example, on tapes or in trays in various dimensions and can be processed in the same way as SMD ("Surface Mount Devices") resistors or capacitors.
  • a semiconductor component or power semiconductor can be used as the power component.
  • H. especially components that z. B. based on silicon, gallium nitride or silicon carbide and are designed in power electronics for controlling and switching high electrical currents and voltages, d. H. in particular, currents greater than 1 ampere and voltages greater than about 24 volts.
  • Examples of such devices are power diodes, thyristors, triacs and transistors such as power MOSFETs, IGBTs and the like.
  • an electrical resistor for example a measuring resistor, can be used as a power component.
  • Such power components are often comparatively thin components, i. H. the dimensions of the base are significantly larger than the thickness of the respective power component perpendicular to the base.
  • such power components have an essentially flat upper or lower side, for example because they are essentially cuboid or cylindrical.
  • one side of the power component rests on the intermediate layer.
  • the intermediate layer thus has the joining area produced by means of sintering (hereinafter also “sintered joining area”) and the respective soldering area.
  • the intermediate layer usually has the shape of a flat cuboid or cylinder, ie with a large upper and lower side—compared to the thickness of the intermediate layer.
  • the upper side of the intermediate layer faces the respective power component and the lower side of the intermediate layer faces the substrate.
  • the sintered joining area preferably occupies the largest area of the intermediate layer, so that the respective soldering area is comparatively small.
  • the respective connection point mentioned is used in particular as a control connection of the respective power component.
  • the respective power component can additionally have a further connection point, which faces the joining area produced by sintering and can be used as a load connection of the respective power component.
  • several such further connection points are also conceivable, which can each be used as a load connection of the respective power component.
  • the configuration of the intermediate layer explained has several advantages.
  • the respective power component is largely connected to the substrate via the sintered joining area of the intermediate layer.
  • the sintered joining area creates a particularly durable, reliable and resilient mechanical connection of the respective power component to the substrate, which also withstands the high thermomechanical stress to which the intermediate layer is subject during the service life of the power module.
  • the respective connection point, at which the thermomechanical stress is significantly lower, is produced with cheaper solder preforms, so that a cost advantage is achieved compared to a completely sintered intermediate layer in power modules.
  • a particular advantage of the proposed power module is that the intermediate layer explained or the connection of the respective power component to the substrate can be produced particularly inexpensively and easily via the explained intermediate layer. This is due, among other things, to the fact that the formation of the sintered joining area and the respective soldering area of the intermediate layer succeeds in particular in one work step. This is possible, for example, in that the solder preform can be melted during the work step of sintering the joining area produced by sintering or the sintered material can be sintered during the work step of soldering the solder area. As a result, both the sintered joining area and the respective soldering area are formed during this work step. Another advantage is that the sintered material from which the sintered joint area is formed can only be compressed to a limited extent, which prevents the solder from being displaced unacceptably during the melting of the solder preform during this work step.
  • the joining area produced by sintering is produced by means of a sintered preform.
  • a sintered preform is in particular a sintered preform or a sintered molded part, for example a cuboid, cylinder, ring or the like made from the material to be sintered.
  • Sintered preforms can also be supplied in standard dimensions, for example on tapes or in trays, and can be processed in the same way as SMD ("Surface Mount Devices") resistors or capacitors.
  • a sintered preform together with a respective solder preform enables the respective power component to be connected to the substrate in a manner that is particularly easy to produce.
  • a sintered preform can be used for the large, active area be used, which is decisive for the final thickness of the intermediate layer.
  • a solder preform can be used that also melts during the sintering process. Thanks to the fact that the sintered preform can only be compressed to a limited extent, an impermissible displacement of the solder when it is melted on the small area during the sintering process can be prevented.
  • thermomechanical stress is usually much lower at the respective connection point, e.g. the gate of a transistor explained above, which is why a solder preform can be used there in the intermediate layer to connect the respective power component to the substrate.
  • solder preforms can be obtained comparatively inexpensively.
  • the joining area produced by means of sintering is formed by means of 3D printing, by means of a coating process or by means of screen/stencil printing.
  • the material of the intermediate layer to be sintered can also be formed or attached or arranged on the substrate by means of 3D printing, by means of a coating process or by means of screen/stencil printing.
  • these alternative methods can have the advantage that particularly delicate or even complicated geometries of the sintered joining area can be realized.
  • power modules with complex power components having many connection points or power modules can be realized with many (such) power components.
  • both one or more sintered preforms and one or more of the alternative methods mentioned are used for a power module in order to produce one or more sintered joining areas.
  • the respective soldering area or the respective soldering preform is free of flux.
  • a flux is a substance added during soldering, which improves the wetting of the workpiece by the solder. It removes the oxides on the surfaces by chemical reaction, in particular by reduction. The same applies to oxides that are formed during the soldering process due to the oxygen in the air. Fluxes also reduce the interfacial tension. Depending on the special requirements or circumstances, fluxes can be acidic or solvent-based or have an activator such as zinc chloride, ammonium chloride or organic salts.
  • flux-free means in particular that the solder of the solder preform has no or almost no flux.
  • the solder of the solder preform is flux-free if it contains exclusively or almost exclusively a mixture or alloy of different metals. It is assumed that a solder has "almost” no flux if the amount of flux contained in the solder only has at most negligible effects in terms of wetting the workpieces, removing the oxides on the workpieces to be soldered and/or reducing the interfacial tensions. In particular, it is assumed that a solder has "nearly" no flux if the solder has only insignificant or undesired flux contamination.
  • both the respective power component and the substrate have a noble metal surface, for example gold or silver, on the respective surface or support surface on the intermediate layer facing the other workpiece. Since these noble metal surfaces do not oxidize or practically do not oxidize, the flux normally required for soldering is not necessary.
  • the joining area produced by sintering and the respective soldering area between the substrate and the respective power component are arranged next to one another and have essentially the same layer thickness.
  • the intermediate layer is usually flat, with the respective power component being arranged on its flat upper side and the substrate being arranged on its flat lower side.
  • the sintered joining area and the respective soldering area are arranged next to one another in particular in such a way that the sintered joining area or the soldering area extends continuously from the flat upper side of the intermediate layer to the opposite, flat lower side of the intermediate layer.
  • the sintered joining area preferably occupies the largest area of the intermediate layer, so that the respective soldering area is comparatively small.
  • the layer thickness of the sintered joining area essentially corresponds to the respective layer thickness of the respective soldering area, so that the intermediate layer has an essentially constant layer thickness. Minor deviations can be tolerable, e.g. as long as no or only negligible cavities or air inclusions form within the sintered joining area and/or the respective soldering area, e.g. because the sintered joining area or the respective soldering area does not have a constant layer thickness. Furthermore, smaller deviations can still be tolerable if there is only negligible earing.
  • the intermediate layer or the sintered joint area and the respective solder area can have a thickness of 10 ⁇ m to 300 ⁇ m, preferably 50 ⁇ m to 150 ⁇ m or 90 ⁇ m to 110 ⁇ m, i. H. about 100 ⁇ m.
  • tolerances of the layer thickness of the intermediate layer or the sintered joining area and/or the respective soldering area of ⁇ 20%, especially ⁇ 10% or only ⁇ 5% can still be acceptable.
  • the layer thicknesses mentioned in connection with this advantageous embodiment relate in particular to the finished power module, i.e. the status after the respective power component has been connected to the substrate by heating the intermediate layer.
  • the respective solder area has a cross section of at most approx. 9 mm 2 , in particular at most approx. 4 mm 2 .
  • the respective solder area can have a round or circular or also a rectangular or square cross-section in a plane parallel to the flat upper side of the substrate.
  • the dimensions can be, for example, 3 mm ⁇ 3 mm or 2 mm ⁇ 2 mm. Smaller dimensions such as 1.6 mm ⁇ 1.6 mm or also less than 2 mm 2 or less than 1 mm 2 , for example 0.5 mm ⁇ 1 mm, are also conceivable.
  • the specified cross sections can, in particular, correspond to the cross-sectional area of the respective soldering area correspond after the connection of the respective power component has been made to the substrate.
  • the substrate comprises a direct bonded copper (DCB) substrate, an insulated metal substrate (IMS), an active metal brazing (AMB) substrate or a printed circuit board, the substrate has a noble metal surface on its side facing the intermediate layer.
  • DCB direct bonded copper
  • IMS insulated metal substrate
  • AMB active metal brazing
  • the DCB substrate and the IMS are, in particular, carrier structures to which electrical conductor tracks and possibly one or more semiconductor chips, power components or other components are or can be applied.
  • the noble metal surface can have gold or silver, for example, with the substrate being coated accordingly, for example.
  • the proposed device having at least one such power module can be designed in particular as a rectifier, inverter or, more generally, a converter or power converter or can include such a device.
  • the proposed power module or a corresponding device can be used in industrial applications, electrically or hybrid-powered vehicles, such as trains, cars, ships, boats or airplanes.
  • the individual components of the proposed power module can be provided and appropriately arranged.
  • the intermediate layer can be heated to or slightly above the melting temperature of the solder or to or slightly above the sintering temperature in order to produce the proposed power module.
  • the complete arrangement is heated to or slightly above the corresponding temperature.
  • pressure can be exerted on the intermediate layer or the complete arrangement, in particular depending on the sintered material.
  • the sintered material and the respective solder preform are arranged on the substrate in such a way that cavities between the sintered material and the respective solder preform remain on the substrate before heating.
  • the intermediate layer is heated to the melting temperature of the solder if the melting temperature of the solder is higher than the sintering temperature, or heated to the sintering temperature if the sintering temperature is higher than the melting temperature of the solder.
  • soldering can be carried out first and then sintered.
  • a low-melting solder can be used for this purpose, which has a melting temperature that is lower than the sintering temperature.
  • the intermediate layer or arrangement is first heated to the melting temperature of the solder, as a result of which the soldered connection is formed.
  • the intermediate layer or arrangement is then heated to the sintering temperature by further increasing the temperature and, if necessary, pressure is exerted on the intermediate layer or arrangement, as a result of which the sintered connection is created.
  • the solder preferably remains molten.
  • the creation of the sintered connection can be carried out in one process step together with the creation of the soldered connection or in a separate process step.
  • a second variant it can be sintered first and then soldered.
  • a high-melting solder can be used for this purpose, which has a melting temperature that is higher than the sintering temperature.
  • the intermediate layer or arrangement is first the sintering temperature is heated and, if necessary, pressure is exerted on the intermediate layer or arrangement, as a result of which the sintered connection is created.
  • the intermediate layer or arrangement is then heated to the melting temperature of the solder by further increasing the temperature, as a result of which the solder connection is created. Since the solder tends to form balls when it melts due to surface tension, this variant can be used in particular to bridge cavities that could still be present after sintering.
  • the creation of the solder connection can be carried out in one process step together with the creation of the sintered connection or in a separate process step.
  • the layer thickness of the sintered material for the joining area produced by sintering is larger or smaller than the layer thickness of the solder for the respective soldering area if the sintering temperature is lower or higher than the melting temperature of the solder.
  • the layer thickness of the sintered material is therefore smaller than the layer thickness of the solder.
  • the layer thickness of the sintered material is therefore greater than the layer thickness of the solder. Since the solder tends to form balls when it melts due to surface tension, this variant can be used in particular to bridge cavities that could still be present after sintering.
  • the mentioned layer thicknesses of the sintered material or the solder relate to the status of the arrangement before the two connections are created by heating and possibly applying pressure.
  • the thicker layer is preferably 10% to 40% thicker than the thinner layer, preferably 15% to 25%. In some examples, the thicker layer is about 10 ⁇ m to 40 ⁇ m thicker than the thinner layer, preferably 15 ⁇ m to 25 ⁇ m.
  • the melting temperature of the solder is essentially the same as the sintering temperature.
  • soldering and sintering can take place practically simultaneously.
  • a solder and a sintered material can be used for this purpose, with the melting temperature of the solder essentially corresponding to the sintering temperature.
  • Temperatures that differ from one another by less than 10 K, especially less than 5 K, are regarded as essentially the same.
  • the sintering temperature may depend on the exertion of pressure on the intermediate layer or arrangement.
  • the temperatures during the sintering and soldering process can be very similar depending on the soldering and sintering process, for example approx. 240° for melting the solder and for sintering.
  • heating the intermediate layer or the arrangement for the purpose of sintering is sufficient to ensure melting of the solder and reliable formation of the soldering point.
  • the sintering process therefore does not need to be specially adapted.
  • the advantage of this variant is that the soldered connection and the sintered connection can be produced particularly easily in one work step.
  • the layer thickness of the solder preform can be selected to be slightly thicker than the layer thickness of the sintered material, i.e. 5% to 15% or approximately 5 ⁇ m to 15 ⁇ m thicker.
  • the mentioned layer thicknesses of the sintered material or the solder relate to the status of the arrangement before the two connections are created by heating and possibly applying pressure.
  • the layer thickness of the sintered material is essentially the same for the joining area produced by means of sintering equal to the layer thickness of the solder for the respective solder area.
  • the thickness of the solder preform preferably essentially corresponds to the thickness of the sintered material before the two connections are created by heating and possibly applying pressure.
  • the thickness of the solder preform is equal to the thickness of the sintered material up to less than ⁇ 10 ⁇ m or ⁇ 10%, preferably less than ⁇ 5 ⁇ m or ⁇ 5%.
  • the mentioned layer thicknesses of the sintered material or the solder relate to the status of the arrangement before the two connections are created by heating and possibly applying pressure.
  • the proposed method explained above for producing the proposed power module can in particular include the method steps explained in connection with the explained advantageous configurations of the power module. This relates in particular to the method steps explained for producing the intermediate layer or the respective soldering area and possibly the joining area produced by means of sintering.
  • figure 1 shows a first embodiment of the proposed power module 1, wherein a cross section through the power module 1 is shown.
  • the power module 1 has a substrate 2 on which an electrically conductive intermediate layer 3 is arranged.
  • the intermediate layer 3 has a joining area 4 produced by sintering.
  • the power module 1 has a power component 5 which is arranged on the intermediate layer 3 and which has one or more connection point(s) 6 connected to the intermediate layer 3 .
  • the intermediate layer 3 has a solder area 7 in the area of the connection point 6, which is connected to the connection point 6 and which is produced by means of a solder preform.
  • connection point 6 can be used in particular as a control connection for the power component 5 .
  • the power component 5 can additionally have a further connection point, which faces the joining area 4 produced by sintering and can be used as a load connection of the power component 5 .
  • additional connection points are also conceivable, which can each be used as a load connection of the respective power component 5 .
  • Connection structures for contacting the intermediate layer 3 are preferably already present both in the power component 5 and on the substrate 2 .
  • the substrate 2 can be structured, with the structures mentioned in figure 1 are not shown in detail.
  • the structuring can be achieved, for example, by the substrate 2 having an electrically conductive surface which faces the intermediate layer 3, this surface having electrically non-conductive recesses or gaps, whereby two or more areas of this surface are electrically insulated from one another.
  • an electrical insulation of the soldering area 7 from the joining area 4 produced by means of sintering can also be created.
  • the substrate 2 can also be configured in multiple layers.
  • the sintered joining area 4 can be produced, for example, by means of a sintered preform. Alternatively or additionally, the sintered joining area 4 can be formed by means of 3D printing, by means of a coating process or by means of screen/stencil printing.
  • the respective soldering area 7 or the respective soldering preform can be free of flux.
  • the sintered joining area 4 and the soldering area 7 can be arranged next to one another between the substrate 2 and the power component 5 and have essentially the same layer thickness 9 .
  • the respective solder region 7 preferably has a cross section of at most approx. 9 mm 2 , in particular at most 4 mm 2 , with a plane being considered parallel to the flat upper side of the substrate 2 .
  • the substrate 2 can comprise a direct bonded copper (DCB) substrate, an insulated metal substrate (IMS), an active metal brazing (AMB) substrate or a printed circuit board.
  • DCB direct bonded copper
  • IMS insulated metal substrate
  • AMB active metal brazing
  • figure 2 shows a second exemplary embodiment of the proposed power module 1, again showing a cross section through the power module 1.
  • Same reference numbers as in figure 1 denote the same objects.
  • the substrate 2 On its side facing the intermediate layer 3, the substrate 2 has a noble metal surface 8, for example containing gold or silver.
  • the substrate 2 comprises a direct bonded copper (DCB) substrate, an insulated metal substrate (IMS), an active metal brazing (AMB) substrate or a printed circuit board.
  • DCB direct bonded copper
  • IMS insulated metal substrate
  • AMB active metal brazing
  • Connection structures for contacting the intermediate layer 3 are preferably already present both in the power component 5 and on the substrate 2 , in particular with regard to the noble metal surface 8 .
  • the noble metal surface 8 can be structured, with the structures mentioned in figure 2 are not shown in detail.
  • the structuring can be achieved, for example, in that the noble metal surface 8 forms an electrically conductive surface, this surface having electrically non-conductive recesses or gaps, as a result of which two or more areas of this surface are electrically insulated from one another.
  • an electrical insulation of the soldering area 7 from the joining area 4 produced by means of sintering can also be created.
  • the substrate 2 can also be configured in multiple layers.
  • the power module 1 has two connection points 6 and the intermediate layer has two solder areas 7 .
  • the respective solder area 7 is arranged in the area of the respective connection point 6 and is connected to the respective connection point 6 .
  • the respective solder area 7 is produced by means of a solder preform.
  • connection points 6 are used in particular as control connections of the power component 5 .
  • the power component 5 can additionally have one or more further connection point(s), which faces the joining area 4 produced by sintering and can be used as a load connection or load connections of the power component 5 .
  • figure 3 shows a flow chart 300 of a first exemplary embodiment of the proposed method.
  • the process starts with step 302 and includes at least the following steps.
  • the substrate is provided.
  • the sintering material for the sintered joining area and the solder for the respective solder area are provided on the substrate to form the intermediate layer, the solder for the respective solder area being provided in the area of the respective connection point of the respective power component and as a solder preform .
  • the respective power component is arranged on the joining area produced by sintering and the respective solder area or on the intermediate layer.
  • the interface layer is heated to the solder melting or sintering temperature. The process ends with step 312.
  • the flow chart can also include further steps, which are explained further above and below.
  • figure 4 shows a flowchart of a second embodiment of the proposed method.
  • the substrate 2, the sintering material for the sintered joining area 4, the solder preform for the soldering area 7 and the power component 5 are provided and arranged appropriately. Only for reasons of clarity, the respective connection point 6 in figure 4 not shown in detail.
  • soldering takes place first and then sintering.
  • a low-melting solder can be used for this purpose, which has a melting temperature that is lower than the sintering temperature.
  • the intermediate layer 3 or arrangement is first heated to the melting temperature of the solder, as a result of which the solder connection is created.
  • the solder preferably remains molten.
  • the intermediate layer becomes 3 or arrangement is heated to the sintering temperature by a further increase in temperature and, if necessary, pressure is exerted on the intermediate layer 3 or arrangement, as a result of which the sintered connection is created.
  • the creation of the sintered connection can be carried out in one process step together with the creation of the soldered connection or in a process step separate therefrom.
  • the solder preform is preferably 10% to 40% thicker than the sintered material, preferably 15% to 25%. In some examples, the solder preform is about 10 ⁇ m to 40 ⁇ m thicker than the sintered material, preferably 15 ⁇ m to 25 ⁇ m.
  • the mentioned layer thicknesses of the sintered material or the solder relate to the status of the arrangement before the two connections are created by heating and possibly applying pressure.
  • figure 5 shows a flowchart of a third exemplary embodiment of the proposed method.
  • the substrate 2 the sintered material for the joining area 4, the solder preform for the soldering area 7 and the power component 5 are provided and suitably arranged. Also only for reasons of clarity, the respective connection point 6 in figure 5 not shown in detail.
  • soldering and sintering take place practically simultaneously.
  • a solder and a sintered material can be used for this purpose, with the melting temperature of the solder essentially corresponding to the sintering temperature.
  • the temperatures during the sintering and soldering process can be very similar depending on the soldering and sintering process, for example approx. 240° for melting the solder and for sintering.
  • the heating of the intermediate layer 3 or the arrangement for the purpose of sintering is sufficient to ensure melting of the solder and reliable formation of the soldering point.
  • the sintering process therefore does not need to be specially adapted.
  • the advantage of this variant is that the soldered connection and the sintered connection are particularly can easily be made in one step.
  • the thickness of the solder preform preferably essentially corresponds to the thickness of the sintered material before the two connections are created by heating and possibly applying pressure.
  • the thickness of the solder preform is equal to the thickness of the sintered material up to less than ⁇ 10 ⁇ m or ⁇ 10%, preferably less than ⁇ 5 ⁇ m or ⁇ 5%.
  • the layer thickness 9 of the solder preform can be selected to be somewhat thicker than the layer thickness 9 of the sintered material, i.e., for example, 5% to 15% or approximately 5 ⁇ m to 15 ⁇ m thicker.
  • the mentioned layer thicknesses of the sintered material or the solder relate to the status of the arrangement before the two connections are created by heating and possibly applying pressure.
  • figure 6 shows a flow chart of a fourth exemplary embodiment of the proposed method.
  • the substrate 2 the sintered material for the joining area 4, the solder preform for the soldering area 7 and the power component 5 are provided and suitably arranged. Again, only for reasons of clarity, the respective connection point 6 in figure 6 not shown in detail.
  • sintering is carried out first and then soldering.
  • a high-melting solder can be used for this purpose, which has a melting temperature that is higher than the sintering temperature.
  • the intermediate layer 3 or arrangement is first heated to the sintering temperature and, if necessary, pressure is exerted on the intermediate layer or arrangement, as a result of which the sintered connection is created. Then the intermediate layer 3 or the arrangement is heated to the melting temperature of the solder by a further increase in temperature, as a result of which the solder connection is created.
  • the creation of the solder connection can be carried out in a process step together with the creation of the sintered connection or in a separate process step.
  • the sintered material is preferably 10% to 40% thicker than the solder preform, preferably 15% to 25%. In some examples, the sintered material is approximately 10 ⁇ m to 40 ⁇ m thicker than the solder preform, preferably 15 ⁇ m to 25 ⁇ m.
  • the mentioned layer thicknesses of the sintered material or the solder relate to the status of the arrangement before the two connections are created by heating and possibly applying pressure.
  • figure 7 shows a first intermediate stage in the production of a third exemplary embodiment of the proposed power module 1.
  • a top view of the substrate 2 is shown, on which a sintering paste for the joining region 4 is applied in this third exemplary embodiment.
  • a solder preform for the solder area 7 is applied to the substrate 2 , the solder area 7 being arranged at a distance from the joining area 4 .
  • Figures 8 and 9 show a first and second intermediate status in the production of a fourth exemplary embodiment of the proposed power module 1.
  • a plan view of the substrate 2 is again illustrated.
  • a sintered preform for the sintered joining area 4 and a solder preform for the soldering area 7 are applied to the substrate 2 , the soldering area 7 in turn being arranged at a distance from the sintered joining area 4 .
  • the power component 5 is connected to the sintered joining area 4 and the soldering area 7 and now covers them in the top view shown.
  • Figures 10 and 11 show cross sections through a fifth exemplary embodiment of the proposed power module 1.
  • FIG 10 shows the cross section through the sintered joining area 4 of the power module 1.
  • a sintered preform was used for this sintered joining area 4, which has a hard sintered core 4" after sintering.
  • the sintered joining area 4 also includes two edge areas, some of which were formed during sintering 4′, one of which is arranged between the sintered core 4′′ and the substrate 2 and the other between the sintered core 4′′ and the power component 5.
  • the sintered joining region 4 can have a sintered core 4′′ designed as a solid material, which is located on both Sides, that is, towards the power component 5 and towards the substrate 2, each have a sintered material.
  • a layered, sintered joining area 4 would also be conceivable, in which sintered material and solid material alternate in layers, eg sintered material-solid material-sintered material-solid material-sintered material.
  • figure 11 12 shows the cross section through the soldering area 7 of the power module 1.
  • a soldering preform was used for this soldering area 7.
  • FIG. Furthermore, a connection point 6 is shown, which is arranged between the rest of the power component 5 and the soldering area 7 .
  • the solder area 7 is arranged between the connection point 6 and the substrate 7 .
  • FIG 12 shows an embodiment of the proposed electrical device 10.
  • the electrical device 10 has the proposed power module 1 on.
  • the electrical device 10 is designed as a converter.

Abstract

Ein Leistungsmodul (1) umfasst ein Substrat (2), eine elektrisch leitende Zwischenschicht (3), welche auf dem Substrat (2) angeordnet ist und welche einen mittels Sinters hergestellten Fügebereich (4) aufweist, und zumindest ein Leistungs-Bauelement (5), welches jeweils auf der Zwischenschicht (3) und dem gesinterten Fügebereich (4) angeordnet ist und damit verbunden ist (insbesondere am Lastanschluss des Leistungs-Bauelements (5)) und welches jeweils zumindest eine mit der Zwischenschicht (3) verbundene Anschlussstelle (6) (z.B. einen Steueranschluss) aufweist, wobei die Zwischenschicht (3) im Bereich der jeweiligen Anschlussstelle (6) einen mittels eines Lot-Preforms hergestellten Lotbereich (7) aufweist, welcher mit der jeweiligen Anschlussstelle (6) verbunden ist und von dem gesinterten Fügebereich (4) beabstandet bzw. elektrisch isoliert ist. Die große aktive Fläche, welche einem hohen thermomechanischen Stress in den Lebensdauertests unterliegt, kann somit über den gesinterten Fügebereich (4) verbunden werden, welcher eine besonders langlebige, zuverlässige und belastbare mechanische Verbindung des jeweiligen Leistungs-Bauelementes (5) mit dem Substrat (2) gewährleistet. An der jeweiligen Anschlussstelle (6), bspw. dem Gate eines Transistors, ist der thermomechanische Stress üblicherweise weitaus geringer, weshalb dort in der Zwischenschicht (3) ein Lot-Preform zur Herstellung der Verbindung des jeweiligen Leistungs-Bauelementes (5) mit dem Substrat (2) verwendet werden kann, wobei solche Lot-Preforms vergleichsweise kostengünstig erhältlich sind. Weiterhin weist ein elektrisches Gerät (10) zumindest ein derartiges Leistungsmodul (1) auf. Der mittels Sinters hergestellte Fügebereich (4) kann mittels eines Sinter-Preforms hergestellt oder mittels 3D-Druckes, mittels eines Beschichtungsverfahrens oder mittels Sieb-/Schablonendruckes ausgebildet werden. Beim Verfahren zur Herstellung des Leistungsmoduls (1) kann die Zwischenschicht (3) auf die Schmelztemperatur des Lots erhitzt werden, wenn die Schmelztemperatur des Lots höher ist als die Sintertemperatur, oder auf die Sintertemperatur erhitzt werden, wenn die Sintertemperatur höher ist als die Schmelztemperatur des Lots, wobei die Schichtdicke (9) des Sintermaterials für den mittels Sinters hergestellten Fügebereich (4) größer bzw. kleiner sein kann als die Schichtdicke (9) des Lots für den jeweiligen Lotbereich (7), wenn die Sintertemperatur entsprechend kleiner bzw. größer ist als die Schmelztemperatur des Lots. Alternativ kann die Schmelztemperatur des Lots im Wesentlichen gleich der Sintertemperatur sein, wobei die Schichtdicke (9) des Sintermaterials für den mittels Sinters hergestellten Fügebereich (4) im Wesentlichen gleich der Schichtdicke (9) des Lots für den jeweiligen Lotbereich (7) sein kann. Der gesinterte Fügebereich (4) kann einen als Vollmaterial ausgestalteten Sinterkern (4") aufweisen, welcher auf beiden Seiten, das heißt zum Leistungs-Bauelement (5) hin und zum Substrat (2) hin, jeweils ein Sintermaterial (4') aufweist; es wäre auch ein geschichteter, gesinterter Fügebereich (4) denkbar, bei welchem sich Sintermaterial und Vollmaterial schichtweise abwechseln, z.B. Sintermaterial-Vollmaterial-Sintermaterial-Vollmaterial-Sintermaterial.A power module (1) comprises a substrate (2), an electrically conductive intermediate layer (3) which is arranged on the substrate (2) and which has a joining area (4) produced by means of sintering, and at least one power component (5) , which is arranged in each case on the intermediate layer (3) and the sintered joining area (4) and is connected thereto (in particular at the load connection of the power component (5)) and which in each case has at least one connection point (6) connected to the intermediate layer (3) (e.g. a control connection), the intermediate layer (3) in the area of the respective connection point (6) having a solder area (7) produced by means of a solder preform, which is connected to the respective connection point (6) and separated from the sintered joining area ( 4) is spaced or electrically isolated. The large active surface, which is subject to high thermo-mechanical stress in the endurance tests, can thus be connected via the sintered joining area (4), which creates a particularly durable, reliable and resilient mechanical connection between the respective power component (5) and the substrate (2nd ) guaranteed. At the respective connection point (6), e.g. the gate of a transistor, the thermomechanical stress is usually much lower, which is why there is a solder preform in the intermediate layer (3) to connect the respective power component (5) to the substrate (2) can be used, with such solder preforms being available at comparatively low cost. Furthermore, an electrical device (10) has at least one such power module (1). The joining area (4) produced by means of sintering can be produced by means of a sintered preform or formed by means of 3D printing, by means of a coating process or by means of screen/stencil printing. In the method of manufacturing the power module (1), the intermediate layer (3) can be heated to the melting temperature of the solder when the melting temperature of the solder is higher than the sintering temperature, or heated to the sintering temperature when the sintering temperature is higher than the melting temperature of the solder Solder, wherein the layer thickness (9) of the sintered material for the joining area (4) produced by means of sintering can be greater or smaller than the layer thickness (9) of the solder for the respective soldered area (7) if the sintering temperature is correspondingly lower or higher than the melting temperature of the solder. Alternatively, the melting temperature of the solder can be essentially the same as the sintering temperature, with the layer thickness (9) of the sintered material for the joining area (4) produced by means of sintering being essentially equal to the layer thickness (9) of the solder for the respective solder area (7). The sintered joining area (4) can have a sintered core (4") designed as a solid material, which has a sintered material (4') on both sides, i.e. towards the power component (5) and towards the substrate (2); a layered, sintered joining area (4) would also be conceivable, in which sintered material and solid material alternate in layers, e.g. sintered material-solid material-sintered material-solid material-sintered material.

Description

Die Erfindung betrifft ein Leistungsmodul umfassend ein Substrat, eine elektrisch leitende Zwischenschicht, welche auf dem Substrat angeordnet ist und welche einen mittels Sinterns hergestellten Fügebereich aufweist, und zumindest ein Leistungs-Bauelement, welches jeweils auf der Zwischenschicht angeordnet ist und welches jeweils zumindest eine mit der Zwischenschicht verbundene Anschlussstelle aufweist.The invention relates to a power module comprising a substrate, an electrically conductive intermediate layer which is arranged on the substrate and which has a joining area produced by sintering, and at least one power component which is arranged on the intermediate layer and which has at least one with the Has interlayer connected connection point.

Weiterhin betrifft die Erfindung ein jeweiliges elektrisches Gerät aufweisend zumindest ein jeweiliges, derartiges Leistungsmodul.Furthermore, the invention relates to a respective electrical device having at least one respective power module of this type.

Schließlich betrifft die Erfindung ein Verfahren zur Herstellung eines derartigen Leistungsmoduls.Finally, the invention relates to a method for producing such a power module.

Derartige Vorrichtungen bzw. ein derartiges Verfahren kommen in einer Vielzahl von Anwendungen in der Leistungselektronik zum Einsatz.Such devices and such a method are used in a large number of applications in power electronics.

Bspw. wird zur Verbesserung der Lebensdauer bei Hochleistungshalbleitern bei der Anbindung des Chips zum DCB(direct bonded copper)-Substrat vermehrt auf die Sintertechnologie gesetzt. Die Sinterdepots werden üblicherweise im Schablonendruck mit Sinterpaste hergestellt. Dabei ist es insbesondere bei kleinen Anschlussflächen wie z. B. einer Gateanbindung eines Leistungshalbleiters schwierig, Depots mit einer Nassschichtdicke von mehr als 120 µm herzustellen. Dies wirkt sich vor allem aus, wenn sehr große und sehr kleine Depots in einem Arbeitsgang bzw. eng benachbart zueinander hergestellt werden müssen. Typische Problemstellungen sind dabei ungleichmäßige Schichtdicken, Auslöffeln der Paste aus den Aperturen, überschüssige Paste am Ende der Apertur (Zipfelbildung bzw. so genannte "doggy ears"), Lufteinschlüsse und schlechtes Auslöseverhalten der Paste aus der Apertur.For example, sintering technology is increasingly being used to improve the service life of high-performance semiconductors when connecting the chip to the DCB (direct bonded copper) substrate. The sinter deposits are usually produced using stencil printing with sinter paste. It is particularly important for small pads such. B. a gate connection of a power semiconductor difficult to produce depots with a wet layer thickness of more than 120 microns. This has an effect above all when very large and very small depots have to be produced in one operation or in close proximity to one another. Typical problems are uneven layer thicknesses, scooping of the paste out of the apertures, excess paste at the end of the aperture (formation of ends). or so-called "doggy ears"), air pockets and poor release behavior of the paste from the aperture.

Bisher gibt es beim Drucken von Sinterpaste keine Lösung für die oben genannten Probleme, was zu einer eingeschränkten technischen Machbarkeit und/oder zu Einbußen bei der Zuverlässigkeit führen kann. Alternativ werden für größere Flächen, d.h. größer als 1,6 mm x 1,6 mm, Sinterpreforms eingesetzt, welche jedoch aufgrund der porösen Sinterpaste auf deren Ober- und Unterseite nicht beliebig klein herstellbar bzw. stanzbar sind. Des Weiteren sind Sinterpreforms meist kostenintensiv und oft nur von einem einzigen Lieferanten als single source verfügbar.So far, there is no solution to the above problems when printing sinter paste, which can lead to limited technical feasibility and/or loss of reliability. Alternatively, for larger areas, i.e. larger than 1.6 mm x 1.6 mm, sintered preforms are used, which, however, due to the porous sintered paste on their upper and lower side, cannot be produced or punched as small as desired. Furthermore, sintered preforms are usually expensive and often only available from a single supplier as a single source.

Eine Aufgabe der Erfindung ist es, ein verbessertes Leistungsmodul, ein entsprechendes elektrisches Gerät und ein entsprechendes Verfahren bereitzustellen, welche insbesondere die genannten Nachteile überwinden.One object of the invention is to provide an improved power module, a corresponding electrical device and a corresponding method which, in particular, overcome the disadvantages mentioned.

Eine Lösung der Aufgabe ergibt sich durch ein Leistungsmodul der eingangs genannten Art dadurch, dass die Zwischenschicht im Bereich der jeweiligen Anschlussstelle einen mittels eines Lot-Preforms hergestellten Lotbereich aufweist, welcher mit der jeweiligen Anschlussstelle verbunden ist.A solution to the problem results from a power module of the type mentioned at the outset in that the intermediate layer has a solder region in the region of the respective connection point which is produced by means of a solder preform and which is connected to the respective connection point.

Weiterhin ergibt sich eine Lösung der Aufgabe durch ein elektrisches Gerät der eingangs genannten Art dadurch, dass das elektrische Gerät zumindest ein solches, vorgeschlagenes Leistungsmodul aufweist.Furthermore, the object is achieved by an electrical device of the type mentioned at the outset in that the electrical device has at least one such proposed power module.

Ferner ergibt sich eine Lösung der Aufgabe durch ein Verfahren zur Herstellung des vorgeschlagenen Leistungsmoduls durch folgende Verfahrensschritte:

  • Bereitstellen des Substrates,
  • Anordnen des Sintermaterials für den zu sinternden Fügebereich und des Lots für den jeweiligen Lotbereich auf dem Substrat zur Ausbildung der Zwischenschicht, wobei das Lot für den jeweiligen Lotbereich im Bereich der jeweiligen Anschlussstelle des jeweiligen Leistungs-Bauelements als Lot-Preform bereitgestellt wird.
  • Anordnen des jeweiligen Leistungs-Bauelements auf dem Fügebereich und dem jeweiligen Lotbereich bzw. auf der Zwischenschicht, und
  • Erhitzen der Zwischenschicht auf die Schmelztemperatur des Lots bzw. auf die Sintertemperatur.
Furthermore, the task is solved by a method for producing the proposed power module using the following method steps:
  • providing the substrate,
  • Arranging the sintering material for the joining area to be sintered and the solder for the respective soldering area on the substrate to form the intermediate layer, with the solder for the respective soldering area in the area the respective connection point of the respective power component is provided as a solder preform.
  • arranging the respective power component on the joining area and the respective solder area or on the intermediate layer, and
  • Heating the intermediate layer to the melting temperature of the solder or to the sintering temperature.

Das vorgeschlagene Leistungsmodul umfasst ein Substrat, auf welchem eine elektrisch leitende Zwischenschicht angeordnet ist. Diese Zwischenschicht weist einen Fügebereich auf. Diese zeichnet sich insb. dadurch aus, dass die Zwischenschicht dort mittels Sinterns hergestellt ist. Beim Sintern handelt es sich dabei bekanntlich um ein Verfahren zur Herstellung oder Veränderung von Werkstoffen. Dabei werden feinkörnige keramische oder metallische Stoffe - oft unter erhöhtem Druck - erhitzt, wobei die Temperaturen jedoch unterhalb der Schmelztemperatur der Hauptkomponenten bleiben. Auf der Zwischenschicht ist ein Leistungs-Bauelement angeordnet, welches zumindest eine Anschlussstelle aufweist, insbesondere um das Leistung-Bauelement über die jeweilige Anschlussstelle mit einer elektrischen Spannung bzw. einem elektrischen Strom zu versorgen. Die jeweilige Anschlussstelle ist dabei mit der Zwischenschicht verbunden, insbesondere elektrisch verbunden.The proposed power module includes a substrate on which an electrically conductive intermediate layer is arranged. This intermediate layer has a joining area. This is characterized in particular by the fact that the intermediate layer is produced there by means of sintering. As is well known, sintering is a process for the production or modification of materials. Fine-grained ceramic or metallic materials are heated - often under increased pressure - but the temperatures remain below the melting point of the main components. A power component is arranged on the intermediate layer, which has at least one connection point, in particular in order to supply the power component with an electrical voltage or an electric current via the respective connection point. The respective connection point is connected to the intermediate layer, in particular electrically connected.

Beispielsweise kann der gesinterte Fügebereich einen als Vollmaterial ausgestalteten Sinterkern aufweisen, welcher auf beiden Seiten, das heißt zum Leistungs-Bauelement hin und zum Substrat hin, jeweils ein Sintermaterial aufweist. Zusätzlich wäre auch ein geschichteter, gesinterte Fügebereich denkbar, bei welchem sich Sintermaterial und Vollmaterial schichtweise abwechseln, z.B. Sintermaterial-Vollmaterial-Sintermaterial-Vollmaterial-Sintermaterial.For example, the sintered joining region can have a sintered core designed as a solid material, which has a sintered material on both sides, that is to say towards the power component and towards the substrate. In addition, a layered, sintered joining area would also be conceivable, in which sintered material and solid material alternate in layers, e.g. sintered material-solid material-sintered material-solid material-sintered material.

Die Zwischenschicht weist zusätzlich im Bereich der jeweiligen Anschlussstelle einen Lotbereich auf, welcher mit der jeweiligen Anschlussstelle verbunden ist, insbesondere elektrisch verbunden ist. Der jeweilige Lotbereich weist Lot auf, d. h. einen Verbindungswerkstoff, der Metalle durch Löten verbindet. Das Lot besteht bspw. aus einer Mischung bzw. Legierung unterschiedlicher Metalle. Besonders häufig werden hierfür Blei, Zinn, Zink, Silber, Antimon und Kupfer verwendet. Dabei ist der jeweilige Lotbereich mittels eines Lot-Preforms hergestellt. Bei einem Lot-Preform handelt es sich insbesondere um eine Lot-Vorform bzw. ein Lot-Formteil, bspw. ein Quader, Zylinder, Ring oder dergleichen in einer gewünschten Größe, insb. aus Lotlegierungen. Solche Lot-Preforms sind bspw. auf Gurten bzw. in Trays in vielfältigen Dimensionen lieferbar und lassen sich analog zu SMD("Surface Mount Devices")-Widerständen oder -Kondensatoren verarbeiten.The intermediate layer additionally has a solder area in the area of the respective connection point, which is connected, in particular electrically connected, to the respective connection point. The respective solder area has solder on, ie a joining material that joins metals by soldering. The solder consists, for example, of a mixture or alloy of different metals. Lead, tin, zinc, silver, antimony and copper are used particularly frequently for this purpose. In this case, the respective soldering area is produced by means of a soldering preform. A solder preform is in particular a solder preform or a solder molded part, for example a cuboid, cylinder, ring or the like in a desired size, especially made of solder alloys. Such solder preforms are available, for example, on tapes or in trays in various dimensions and can be processed in the same way as SMD ("Surface Mount Devices") resistors or capacitors.

Als Leistungs-Bauelement kann bspw. ein Halbleiter-Bauelement bzw. Leistungs-Halbleiter eingesetzt werden, d. h. insb. Bauelemente , die z. B. auf Silizium, Galliumnitrid oder Siliziumcarbid basieren und die in der Leistungselektronik für das Steuern und Schalten hoher elektrischer Ströme und Spannungen ausgelegt sind, d. h. insbesondere Ströme von mehr als 1 Ampere und Spannungen von mehr als etwa 24 Volt. Beispiele solcher Bauelemente sind Leistungsdioden, Thyristoren, Triacs und Transistoren, wie zum Beispiel Leistungs-MOSFETs, IGBTs und dergleichen. Weiterhin kann als Leistungs-Bauelement ein elektrischer Widerstand, bspw. ein Messwiderstand, eingesetzt werden.A semiconductor component or power semiconductor, for example, can be used as the power component. H. especially components that z. B. based on silicon, gallium nitride or silicon carbide and are designed in power electronics for controlling and switching high electrical currents and voltages, d. H. in particular, currents greater than 1 ampere and voltages greater than about 24 volts. Examples of such devices are power diodes, thyristors, triacs and transistors such as power MOSFETs, IGBTs and the like. Furthermore, an electrical resistor, for example a measuring resistor, can be used as a power component.

Oftmals sind derartige Leistungs-Bauelemente vergleichsweise dünne Bauelemente, d. h. die Abmessungen der Grundfläche sind wesentlich größer als die Dicke des jeweiligen Leistungs-Bauelementes senkrecht zur Grundfläche. Insbesondere haben derartige Leistungs-Bauelemente eine im Wesentlichen flache Ober- bzw. Unterseite, bspw. da sie im Wesentlichen quaderförmig oder zylinderförmig sind. Insbesondere liegt eine Seite des Leistungs-Bauelementes auf der Zwischenschicht auf.Such power components are often comparatively thin components, i. H. the dimensions of the base are significantly larger than the thickness of the respective power component perpendicular to the base. In particular, such power components have an essentially flat upper or lower side, for example because they are essentially cuboid or cylindrical. In particular, one side of the power component rests on the intermediate layer.

Wie erwähnt, weist die Zwischenschicht somit den mittels Sinterns hergestellten Fügebereich (im Folgenden auch "gesinterten Fügebereich") sowie den jeweiligen Lotbereich auf. So wie typische Leistungs-Bauelemente weist auch die Zwischenschicht üblicherweise die Form eines flachen Quaders bzw. Zylinders auf, d.h. mit einer - verglichen zur Dicke der Zwischenschicht - großen Ober- und Unterseite. Dabei ist die Oberseite der Zwischenschicht dem jeweiligen Leistungs-Bauelement zugewandt und die Unterseite der Zwischenschicht dem Substrat zugewandt. Weiterhin nimmt der gesinterte Fügebereich vorzugsweise den größten Bereich der Zwischenschicht ein, sodass der jeweilige Lotbereich vergleichsweise klein ist.As mentioned, the intermediate layer thus has the joining area produced by means of sintering (hereinafter also “sintered joining area”) and the respective soldering area. As well as typical power components, the intermediate layer usually has the shape of a flat cuboid or cylinder, ie with a large upper and lower side—compared to the thickness of the intermediate layer. In this case, the upper side of the intermediate layer faces the respective power component and the lower side of the intermediate layer faces the substrate. Furthermore, the sintered joining area preferably occupies the largest area of the intermediate layer, so that the respective soldering area is comparatively small.

Die erwähnte, jeweilige Anschlussstelle wird insbesondere als Steueranschluss des jeweiligen Leistungs-Bauelements eingesetzt. Das jeweilige Leistungs-Bauelement kann zusätzlich eine weitere Anschlussstelle aufweisen, welche dem mittels Sinterns hergestellten Fügebereich zugewandt ist und als Lastanschluss des jeweiligen Leistungs-Bauelements eingesetzt werden kann. Prinzipiell sind auch mehrere solcher weiterer Anschlussstellen denkbar, welche jeweils als Lastanschluss des jeweiligen Leistungs-Bauelements eingesetzt werden können.The respective connection point mentioned is used in particular as a control connection of the respective power component. The respective power component can additionally have a further connection point, which faces the joining area produced by sintering and can be used as a load connection of the respective power component. In principle, several such further connection points are also conceivable, which can each be used as a load connection of the respective power component.

Die erläuterte Ausgestaltung der Zwischenschicht hat mehrere Vorteile. Bspw. wird das jeweilige Leistungs-Bauelement großteils über den gesinterten Fügebereich der Zwischenschicht mit dem Substrat verbunden. Der gesinterte Fügebereich schafft insbesondere eine besonders langlebige, zuverlässige und belastbare mechanische Verbindung des jeweiligen Leistungs-Bauelementes mit dem Substrat, welche auch dem hohen thermomechanische Stress standhält, welchem die Zwischenschicht während der Lebensdauer des Leistungsmoduls unterliegt. Hingegen wird die jeweilige Anschlussstelle, an welcher der thermomechanische Stress deutlich geringer ist, mit kostengünstigeren Lot-Preforms hergestellt, sodass ein Kostenvorteil gegenüber einer vollständig gesinterten Zwischenschicht bei Leistungsmodulen erzielt wird.The configuration of the intermediate layer explained has several advantages. For example, the respective power component is largely connected to the substrate via the sintered joining area of the intermediate layer. In particular, the sintered joining area creates a particularly durable, reliable and resilient mechanical connection of the respective power component to the substrate, which also withstands the high thermomechanical stress to which the intermediate layer is subject during the service life of the power module. On the other hand, the respective connection point, at which the thermomechanical stress is significantly lower, is produced with cheaper solder preforms, so that a cost advantage is achieved compared to a completely sintered intermediate layer in power modules.

Von besonderem Vorteil ist bei dem vorgeschlagenen Leistungsmodul, dass die erläuterte Zwischenschicht bzw. die Verbindung des jeweiligen Leistungs-Bauelementes mit dem Substrat über die erläuterte Zwischenschicht besonders kostengünstig und einfach hergestellt werden kann. Dies liegt u.a. daran, dass die Ausbildung des gesinterten Fügebereichs und des jeweiligen Lotbereichs der Zwischenschicht insbesondere in einem Arbeitsschritt gelingt. Dies ist bspw. dadurch möglich, dass während des Arbeitsschrittes des Sinterns des mittels Sinterns hergestellten Fügebereichs das Lot-Preform aufgeschmolzen werden kann bzw. während des Arbeitsschrittes des Lötens des Lotbereichs der Sinter-Werkstoff gesintert werden kann. Im Resultat bilden sich während dieses Arbeitsschrittes sowohl der gesinterte Fügebereich als auch der jeweilige Lotbereich aus. Weiterhin ergibt sich als Vorteil, dass das Sintermaterial, aus welchem der gesinterte Fügebereich gebildet wird, nur begrenzt komprimierbar ist, wodurch eine unzulässige Verdrängung des Lots während des Aufschmelzens des Lot-Preforms während dieses Arbeitsschrittes verhindert wird.A particular advantage of the proposed power module is that the intermediate layer explained or the connection of the respective power component to the substrate can be produced particularly inexpensively and easily via the explained intermediate layer. This is due, among other things, to the fact that the formation of the sintered joining area and the respective soldering area of the intermediate layer succeeds in particular in one work step. This is possible, for example, in that the solder preform can be melted during the work step of sintering the joining area produced by sintering or the sintered material can be sintered during the work step of soldering the solder area. As a result, both the sintered joining area and the respective soldering area are formed during this work step. Another advantage is that the sintered material from which the sintered joint area is formed can only be compressed to a limited extent, which prevents the solder from being displaced unacceptably during the melting of the solder preform during this work step.

Bei einer vorteilhaften Ausgestaltung der Erfindung ist der mittels Sinterns hergestellte Fügebereich mittels eines Sinter-Preforms hergestellt.In an advantageous embodiment of the invention, the joining area produced by sintering is produced by means of a sintered preform.

Bei einem Sinter-Preform handelt es sich insbesondere um eine Sinter-Vorform bzw. ein Sinter-Formteil, bspw. ein Quader, Zylinder, Ring oder dergleichen aus dem zu sinternden Werkstoff. Auch Sinter-Preforms sind bspw. auf Gurten bzw. in Trays in gängigen Dimensionen lieferbar und lassen sich analog zu SMD("Surface Mount Devices")-Widerständen oder - Kondensatoren verarbeiten.A sintered preform is in particular a sintered preform or a sintered molded part, for example a cuboid, cylinder, ring or the like made from the material to be sintered. Sintered preforms can also be supplied in standard dimensions, for example on tapes or in trays, and can be processed in the same way as SMD ("Surface Mount Devices") resistors or capacitors.

Die Verwendung eines Sinter-Preforms zusammen mit einem jeweiligen Lot-Preform ermöglicht eine besonders leicht herstellbare Verbindung des jeweiligen Leistungs-Bauelements mit dem Substrat. Insbesondere können durch die Kombination eines Sinter-Preforms mit einem jeweiligen Lot-Preform große, gesinterte Bereiche und kleine, gelötete Bereiche der Zwischenschicht in einem Sinter- bzw. Arbeitsschritt verbunden werden, bspw. auch ohne eine zusätzliche Aktivierung des Lots. Hierbei kann für die aktive, große Fläche ein Sinter-Preform verwendet werden, welches ausschlaggebend für die endgültige Dicke der Zwischenschicht ist. Für die kleine, gelötete Fläche, zum Beispiel am Gate eines als Transistor ausgestalteten Leistung-Bauelements, kann ein Lot-Preform verwendet werden, das während des Sintervorgangs mit aufschmilzt. Dank der nur begrenzt komprimierbaren Sinter-Preform kann dabei eine unzulässige Verdrängung des Lots beim Aufschmelzen auf der kleinen Fläche während des Sintervorgangs verhindert werden.The use of a sintered preform together with a respective solder preform enables the respective power component to be connected to the substrate in a manner that is particularly easy to produce. In particular, by combining a sintered preform with a respective solder preform, large, sintered areas and small, soldered areas of the intermediate layer can be connected in one sintering or working step, for example without additional activation of the solder. A sintered preform can be used for the large, active area be used, which is decisive for the final thickness of the intermediate layer. For the small, soldered area, for example on the gate of a power component designed as a transistor, a solder preform can be used that also melts during the sintering process. Thanks to the fact that the sintered preform can only be compressed to a limited extent, an impermissible displacement of the solder when it is melted on the small area during the sintering process can be prevented.

Die große aktive Fläche, welche einem hohen thermomechanischen Stress in den Lebensdauertests unterliegt, kann somit über den gesinterten Fügebereich verbunden werden, welcher eine besonders langlebige, zuverlässige und belastbare mechanische Verbindung des jeweiligen Leistungs-Bauelementes mit dem Substrat gewährleistet. An der jeweiligen Anschlussstelle, bspw. dem oben erläuterten Gate eines Transistors, ist der thermomechanische Stress üblicherweise weitaus geringer, weshalb dort in der Zwischenschicht ein Lot-Preform zur Herstellung der Verbindung des jeweiligen Leistungs-Bauelementes mit dem Substrat verwendet werden kann. Wie bereits erwähnt, sind solche Lot-Preforms vergleichsweise kostengünstig erhältlich.The large active surface, which is subject to high thermo-mechanical stress in the endurance tests, can thus be connected via the sintered joining area, which ensures a particularly durable, reliable and resilient mechanical connection of the respective power component to the substrate. The thermomechanical stress is usually much lower at the respective connection point, e.g. the gate of a transistor explained above, which is why a solder preform can be used there in the intermediate layer to connect the respective power component to the substrate. As already mentioned, such solder preforms can be obtained comparatively inexpensively.

Bei einer alternativen vorteilhaften Ausgestaltung der Erfindung ist der mittels Sinterns hergestellte Fügebereich mittels 3D-Druckes, mittels eines Beschichtungsverfahrens oder mittels Sieb-/Schablonendruckes ausgebildet.In an alternative advantageous embodiment of the invention, the joining area produced by means of sintering is formed by means of 3D printing, by means of a coating process or by means of screen/stencil printing.

Alternativ zur Verwendung eines Sinter-Preforms kann der zu sinternde Werkstoff der Zwischenschicht auch mittels 3D-Druckes, mittels eines Beschichtungsverfahrens oder mittels Sieb-/Schablonendruckes ausgebildet werden bzw. auf dem Substrat angebracht bzw. angeordnet werden. Diese alternativen Verfahren können gegenüber der Verwendung eines Sinter-Preforms den Vorteil haben, dass besonders feingliedrige oder auch komplizierte Geometrien des gesinterten Fügebereichs realisierbar sind. Bspw. können mittels solcher alternativer Verfahren Leistungsmodule mit komplexen Leistungs-Bauelementen aufweisend viele Anschlussstellen oder Leistungsmodule mit vielen (solcher) Leistungs-Bauelemente realisiert werden.As an alternative to using a sintered preform, the material of the intermediate layer to be sintered can also be formed or attached or arranged on the substrate by means of 3D printing, by means of a coating process or by means of screen/stencil printing. Compared to using a sintered preform, these alternative methods can have the advantage that particularly delicate or even complicated geometries of the sintered joining area can be realized. For example, using such alternative methods, power modules with complex power components having many connection points or power modules can be realized with many (such) power components.

Denkbar ist weiterhin, dass für ein Leistungsmodul sowohl ein oder mehrere Sinter-Preforms als auch eines oder mehrere der erwähnten alternativen Verfahren zum Einsatz kommen, um ein oder mehrere gesinterte Fügebereiche herzustellen.It is also conceivable that both one or more sintered preforms and one or more of the alternative methods mentioned are used for a power module in order to produce one or more sintered joining areas.

Bei einer weiteren vorteilhaften Ausgestaltung der Erfindung ist der jeweilige Lotbereich bzw. das jeweilige Lot-Preform flussmittelfrei.In a further advantageous embodiment of the invention, the respective soldering area or the respective soldering preform is free of flux.

Ein Flussmittel ist hierbei ein beim Löten zugegebener Stoff, der eine bessere Benetzung des Werkstücks durch das Lot bewirkt. Es entfernt die an den Oberflächen aufliegenden Oxide durch chemische Reaktion, insbesondere mittels Reduktion. Gleiches gilt für Oxide, die während des Lötvorgangs durch den Sauerstoff der Luft entstehen. Flussmittel setzen außerdem die Grenzflächenspannungen herab. Je nach den speziellen Anforderungen bzw. Gegebenheiten, können Flussmittel säurehaltig oder lösemittelhaltig sein oder einen Aktivator, wie Zinkchlorid, Ammoniumchlorid oder organische Salze, aufweisen.A flux is a substance added during soldering, which improves the wetting of the workpiece by the solder. It removes the oxides on the surfaces by chemical reaction, in particular by reduction. The same applies to oxides that are formed during the soldering process due to the oxygen in the air. Fluxes also reduce the interfacial tension. Depending on the special requirements or circumstances, fluxes can be acidic or solvent-based or have an activator such as zinc chloride, ammonium chloride or organic salts.

Flussmittelfrei bedeutet dabei insbesondere, dass das Lot des Lot-Preforms kein oder nahezu kein Flussmittel aufweist. Bspw. ist das Lot des Lot-Preforms flussmittelfrei, wenn es ausschließlich bzw. nahezu ausschließlich eine Mischung bzw. Legierung unterschiedlicher Metalle aufweist. Dabei wird angenommen, dass ein Lot "nahezu" kein Flussmittel aufweist, wenn die im Lot enthaltene Menge des Flussmittels lediglich höchstens vernachlässigbare Wirkungen bezüglich Benetzung der Werkstücke, Entfernung der Oxide auf den zu lötenden Werkstücken und/oder Herabsetzung der Grenzflächenspannungen entfaltet. Insbesondere wird angenommen, dass ein Lot "nahezu" kein Flussmittel aufweist, wenn das Lot lediglich unerhebliche bzw. unerwünschte Verunreinigungen mit Flussmittel aufweist. Obwohl beim Löten oftmals Flussmittel verwendet werden, gelingt die Ausbildung der jeweiligen Lotschicht und die Verbindung des jeweiligen Leistungs-Bauelementes mit dem Substrat mittels des flussmittelfreien Lot-Preforms bzw. Lotbereichs, da bei dem vorgeschlagenen Leistungsmodul das jeweilige Leistungs-Bauelement über den mittels Sinters hergestellten Fügebereich der Zwischenschicht mittels Sintern auf dem Substrat befestigt wird. Entsprechend weisen sowohl das jeweilige Leistungs-Bauelement als auch das Substrat an der jeweiligen, dem anderen Werkstück zugewandten Oberfläche bzw. Auflagefläche auf der Zwischenschicht eine Edelmetalloberfläche, bspw. Gold oder Silber, auf. Da diese Edelmetalloberflächen nicht oder praktisch nicht oxidieren, ist das für das Löten normalerweise notwendige Flussmittel nicht notwendig.In this case, flux-free means in particular that the solder of the solder preform has no or almost no flux. For example, the solder of the solder preform is flux-free if it contains exclusively or almost exclusively a mixture or alloy of different metals. It is assumed that a solder has "almost" no flux if the amount of flux contained in the solder only has at most negligible effects in terms of wetting the workpieces, removing the oxides on the workpieces to be soldered and/or reducing the interfacial tensions. In particular, it is assumed that a solder has "nearly" no flux if the solder has only insignificant or undesired flux contamination. Although fluxes are often used during soldering, the formation of the respective solder layer and the connection of the respective power component to the substrate are successful using the flux-free solder preforms or solder area, since in the proposed power module the respective power component is above the one produced using sinters Joining area of the intermediate layer is fixed by sintering on the substrate. Correspondingly, both the respective power component and the substrate have a noble metal surface, for example gold or silver, on the respective surface or support surface on the intermediate layer facing the other workpiece. Since these noble metal surfaces do not oxidize or practically do not oxidize, the flux normally required for soldering is not necessary.

Bei einer weiteren vorteilhaften Ausgestaltung der Erfindung sind der mittels Sinterns hergestellte Fügebereich und der jeweilige Lotbereich zwischen dem Substrat und dem jeweiligen Leistungs-Bauelement nebeneinander angeordnet und weisen im Wesentlichen dieselbe Schichtdicke auf.In a further advantageous embodiment of the invention, the joining area produced by sintering and the respective soldering area between the substrate and the respective power component are arranged next to one another and have essentially the same layer thickness.

Üblicherweise ist die Zwischenschicht flach ausgestaltet, wobei auf ihrer flachen Oberseite das jeweilige Leistungs-Bauelement und auf ihrer flachen Unterseite das Substrat angeordnet ist. Innerhalb der Zwischenschicht sind der gesinterte Fügebereich sowie der jeweilige Lotbereich insbesondere derart nebeneinander angeordnet, dass sich der gesinterte Fügebereich bzw. der Lotbereich durchgehend von der flachen Oberseite der Zwischenschicht zur gegenüberliegenden, flachen Unterseite Zwischenschicht erstreckt. Weiterhin nimmt der gesinterte Fügebereich vorzugsweise den größten Bereich der Zwischenschicht ein, sodass der jeweilige Lotbereich vergleichsweise klein ist.The intermediate layer is usually flat, with the respective power component being arranged on its flat upper side and the substrate being arranged on its flat lower side. Within the intermediate layer, the sintered joining area and the respective soldering area are arranged next to one another in particular in such a way that the sintered joining area or the soldering area extends continuously from the flat upper side of the intermediate layer to the opposite, flat lower side of the intermediate layer. Furthermore, the sintered joining area preferably occupies the largest area of the intermediate layer, so that the respective soldering area is comparatively small.

Die Schichtdicke des gesinterten Fügebereichs entspricht dabei im Wesentlichen der jeweiligen Schichtdicke des jeweiligen Lotbereichs, sodass die Zwischenschicht eine im Wesentlichen konstante Schichtdicke aufweist. Kleinere Abweichungen können dabei tolerierbar sein, bspw. solange sich innerhalb des gesinterten Fügebereichs und/oder des jeweiligen Lotbereichs keine oder nur vernachlässigbare Hohlräume bzw. Lufteinschlüsse bilden, bspw. dadurch, dass der gesinterte Fügebereich bzw. der jeweilige Lotbereich keine konstante Schichtdicke aufweist. Weiterhin können kleinere Abweichungen noch tolerierbar sein, sofern lediglich vernachlässigbare Zipfelbildung vorliegt.The layer thickness of the sintered joining area essentially corresponds to the respective layer thickness of the respective soldering area, so that the intermediate layer has an essentially constant layer thickness. Minor deviations can be tolerable, e.g. as long as no or only negligible cavities or air inclusions form within the sintered joining area and/or the respective soldering area, e.g. because the sintered joining area or the respective soldering area does not have a constant layer thickness. Furthermore, smaller deviations can still be tolerable if there is only negligible earing.

Beispielhaft können die Zwischenschicht bzw. der gesinterte Fügebereich und der jeweilige Lotbereich eine Dicke von 10 µm bis 300 µm aufweisen, vorzugsweise von 50 µm bis 150 µm bzw. von 90 µm bis 110 µm, d. h. etwa 100 µm. Je nach Ausgestaltung des Leistungsmoduls können Toleranzen der Schichtdicke der Zwischenschicht bzw. des gesinterten Fügebereichs und/oder des jeweiligen Lotbereichs von ±20%, insb. ±10% oder lediglich ±5% noch akzeptabel sein.For example, the intermediate layer or the sintered joint area and the respective solder area can have a thickness of 10 μm to 300 μm, preferably 50 μm to 150 μm or 90 μm to 110 μm, i. H. about 100 µm. Depending on the configuration of the power module, tolerances of the layer thickness of the intermediate layer or the sintered joining area and/or the respective soldering area of ±20%, especially ±10% or only ±5% can still be acceptable.

Die im Zusammenhang mit dieser vorteilhaften Ausgestaltung genannten Schichtdicken beziehen sich dabei insbesondere auf das fertig hergestellte Leistungsmodul, d.h. den Status nach dem Verbinden des jeweiligen Leistungs-Bauelementes mit dem Substrat durch Erhitzen der Zwischenschicht.The layer thicknesses mentioned in connection with this advantageous embodiment relate in particular to the finished power module, i.e. the status after the respective power component has been connected to the substrate by heating the intermediate layer.

Bei einer weiteren vorteilhaften Ausgestaltung der Erfindung weist der jeweilige Lotbereich einen Querschnitt von höchstens ca. 9 mm2, insb. von höchstens ca. 4 mm2, auf.In a further advantageous embodiment of the invention, the respective solder area has a cross section of at most approx. 9 mm 2 , in particular at most approx. 4 mm 2 .

Der jeweilige Lotbereich kann dabei - in einer Ebene parallel zur flachen Oberseite des Substrats - einen runden bzw. kreisförmigen oder auch einen rechteckig bzw. quadratischen Querschnitt aufweisen. Bei quadratischen Querschnitten können die Abmessung bspw. 3 mm x 3 mm bzw. 2 mm x 2 mm sein. Auch kleinere Abmessungen wie zum Beispiel 1,6 mm x 1,6 mm bzw. auch unter 2 mm2 oder unter 1 mm2, wie z.B. 0,5 mm x 1 mm, sind denkbar. Dabei können die angegebenen Querschnitte insbesondere der Querschnittsfläche des jeweiligen Lotbereichs entsprechen, nachdem die Verbindung des jeweiligen Leistungs-Bauelementes mit dem Substrat hergestellt wurde.The respective solder area can have a round or circular or also a rectangular or square cross-section in a plane parallel to the flat upper side of the substrate. In the case of square cross sections, the dimensions can be, for example, 3 mm×3 mm or 2 mm×2 mm. Smaller dimensions such as 1.6 mm×1.6 mm or also less than 2 mm 2 or less than 1 mm 2 , for example 0.5 mm×1 mm, are also conceivable. In this case, the specified cross sections can, in particular, correspond to the cross-sectional area of the respective soldering area correspond after the connection of the respective power component has been made to the substrate.

Bei einer weiteren vorteilhaften Ausgestaltung der Erfindung umfasst das Substrat ein Direct-Bonded-Copper(DCB)-Substrat, ein Insulated-Metal-Substrate (IMS), ein Active-Metal-Brazing(AMB)-Substrat oder eine Leiterplatte, wobei das Substrat an seiner, der Zwischenschicht zugewandten Seite eine Edelmetalloberfläche aufweist.In a further advantageous embodiment of the invention, the substrate comprises a direct bonded copper (DCB) substrate, an insulated metal substrate (IMS), an active metal brazing (AMB) substrate or a printed circuit board, the substrate has a noble metal surface on its side facing the intermediate layer.

Bei dem DCB-Substrat und dem IMS handelt es sich insbesondere um Trägerstrukturen, auf die elektrische Leiterbahnen und ggf. ein oder mehrere Halbleiterchips, Leistungs-Bauelemente oder andere Bauelemente aufgebracht sind bzw. werden können.The DCB substrate and the IMS are, in particular, carrier structures to which electrical conductor tracks and possibly one or more semiconductor chips, power components or other components are or can be applied.

Die Edelmetalloberfläche kann bspw. Gold oder Silber aufweisen, wobei das Substrat bspw. entsprechend beschichtet ist.The noble metal surface can have gold or silver, for example, with the substrate being coated accordingly, for example.

Das vorgeschlagene Gerät aufweisend zumindest ein solches Leistungsmodul kann insbesondere als Gleichrichter, Wechselrichter bzw. ganz allgemein Umrichter oder Stromrichter ausgestaltet sein bzw. einen solchen umfassen. Insbesondere kann das vorgeschlagene Leistungsmodul oder ein entsprechendes Gerät bei industriellen Anwendungen, elektrisch oder hybridangetriebenen Fahrzeugen, wie zum Beispiel bei Zügen, Autos, Schiffen, Booten oder Flugzeugen, eingesetzt werden.The proposed device having at least one such power module can be designed in particular as a rectifier, inverter or, more generally, a converter or power converter or can include such a device. In particular, the proposed power module or a corresponding device can be used in industrial applications, electrically or hybrid-powered vehicles, such as trains, cars, ships, boats or airplanes.

Wie oben erwähnt, können gemäß dem vorgeschlagenen Verfahren die einzelnen Komponenten des vorgeschlagenen Leistungsmoduls bereitgestellt werden und passend angeordnet werden. Die Zwischenschicht kann auf bzw. leicht über die Schmelztemperatur des Lots bzw. auf bzw. leicht über die Sintertemperatur erhitzt werden, um das vorgeschlagene Leistungsmodul herzustellen. Insbesondere wird hierzu die komplette Anordnung auf bzw. leicht über die entsprechende Temperatur erhitzt. Weiterhin kann auf die Zwischenschicht bzw. die komplette Anordnung, insbesondere je nach Sinter-Werkstoff, Druck ausgeübt werden. Beispielsweise können der Sinter-Werkstoff und das jeweilige Lot-Preform derart auf dem Substrat angeordnet werden, dass auf dem Substrat vor dem Erhitzen noch Hohlräume zwischen dem Sinter-Werkstoff und dem jeweiligen Lot-Preform verbleiben.As mentioned above, according to the proposed method, the individual components of the proposed power module can be provided and appropriately arranged. The intermediate layer can be heated to or slightly above the melting temperature of the solder or to or slightly above the sintering temperature in order to produce the proposed power module. For this purpose, in particular, the complete arrangement is heated to or slightly above the corresponding temperature. Furthermore, pressure can be exerted on the intermediate layer or the complete arrangement, in particular depending on the sintered material. For example, the sintered material and the respective solder preform are arranged on the substrate in such a way that cavities between the sintered material and the respective solder preform remain on the substrate before heating.

Bei einer weiteren vorteilhaften Ausgestaltung der Erfindung wird die Zwischenschicht auf die Schmelztemperatur des Lots erhitzt, wenn die Schmelztemperatur des Lots höher ist als die Sintertemperatur, oder auf die Sintertemperatur erhitzt, wenn die Sintertemperatur höher ist als die Schmelztemperatur des Lots.In a further advantageous embodiment of the invention, the intermediate layer is heated to the melting temperature of the solder if the melting temperature of the solder is higher than the sintering temperature, or heated to the sintering temperature if the sintering temperature is higher than the melting temperature of the solder.

Denkbar sind dabei zwei Varianten, die im Folgenden erläutert werden.Two variants are conceivable, which are explained below.

Gemäß einer ersten Variante kann zunächst gelötet und anschließend gesintert werden. Hierzu kann insbesondere ein niederschmelzendes Lot verwendet werden, welches eine Schmelztemperatur aufweist, die kleiner als die Sintertemperatur ist. Während des Herstellungsprozesses des vorgeschlagenen Leistungsmoduls wird die Zwischenschicht bzw. Anordnung zunächst auf die Schmelztemperatur des Lots erhitzt, wodurch sich die Lotverbindung ausbildet. Dann wird die Zwischenschicht bzw. Anordnung durch weitere Temperaturerhöhung auf die Sintertemperatur erhitzt und ggf. Druck auf die Zwischenschicht bzw. Anordnung ausgeübt, wodurch die Sinterverbindung geschaffen wird. Das Lot bleibt dabei vorzugsweise schmelzflüssig. Die Schaffung der Sinterverbindung kann dabei in einem Prozessschritt zusammen mit der Schaffung der Lotverbindung oder in einem davon abgetrennten Prozessschritt durchgeführt werden.According to a first variant, soldering can be carried out first and then sintered. In particular, a low-melting solder can be used for this purpose, which has a melting temperature that is lower than the sintering temperature. During the manufacturing process of the proposed power module, the intermediate layer or arrangement is first heated to the melting temperature of the solder, as a result of which the soldered connection is formed. The intermediate layer or arrangement is then heated to the sintering temperature by further increasing the temperature and, if necessary, pressure is exerted on the intermediate layer or arrangement, as a result of which the sintered connection is created. The solder preferably remains molten. The creation of the sintered connection can be carried out in one process step together with the creation of the soldered connection or in a separate process step.

Gemäß einer zweiten Variante kann zunächst gesintert und anschließend gelötet werden. Hierzu kann insbesondere ein hochschmelzendes Lot verwendet werden, welches eine Schmelztemperatur aufweist, die größer als die Sintertemperatur ist. Während des Herstellungsprozesses des vorgeschlagenen Leistungsmoduls wird die Zwischenschicht bzw. Anordnung zunächst auf die Sintertemperatur erhitzt und ggf. Druck auf die Zwischenschicht bzw. Anordnung ausgeübt, wodurch die Sinterverbindung geschaffen wird. Dann wird die Zwischenschicht bzw. Anordnung durch weitere Temperaturerhöhung auf die Schmelztemperatur des Lots erhitzt, wodurch die Lotverbindung geschaffen wird. Da das Lot beim Aufschmelzen durch die Oberflächenspannung zur Kugelbildung neigt, können bei dieser Variante insbesondere Hohlräume überbrückt werden, die nach dem Sintern noch vorhanden sein könnten. Die Schaffung der Lotverbindung kann dabei in einem Prozessschritt zusammen mit der Schaffung der Sinterverbindung oder in einem davon abgetrennten Prozessschritt durchgeführt werden.According to a second variant, it can be sintered first and then soldered. In particular, a high-melting solder can be used for this purpose, which has a melting temperature that is higher than the sintering temperature. During the manufacturing process of the proposed power module, the intermediate layer or arrangement is first the sintering temperature is heated and, if necessary, pressure is exerted on the intermediate layer or arrangement, as a result of which the sintered connection is created. The intermediate layer or arrangement is then heated to the melting temperature of the solder by further increasing the temperature, as a result of which the solder connection is created. Since the solder tends to form balls when it melts due to surface tension, this variant can be used in particular to bridge cavities that could still be present after sintering. The creation of the solder connection can be carried out in one process step together with the creation of the sintered connection or in a separate process step.

Bei einer weiteren vorteilhaften Ausgestaltung der Erfindung ist dabei die Schichtdicke des Sintermaterials für den mittels Sinterns hergestellten Fügebereich größer bzw. kleiner ist als die Schichtdicke des Lots für den jeweiligen Lotbereich, wenn die Sintertemperatur kleiner bzw. größer ist als die Schmelztemperatur des Lots.In a further advantageous embodiment of the invention, the layer thickness of the sintered material for the joining area produced by sintering is larger or smaller than the layer thickness of the solder for the respective soldering area if the sintering temperature is lower or higher than the melting temperature of the solder.

Gemäß der ersten Variante, bei welcher zunächst gelötet und anschließend gesintert werden kann, ist die Schichtdicke des Sintermaterials somit kleiner als die Schichtdicke des Lots. Und gemäß der zweiten Variante, bei welcher zunächst gesintert und anschließend gelötet werden kann, ist die Schichtdicke des Sintermaterials somit größer als die Schichtdicke des Lots. Da das Lot beim Aufschmelzen durch die Oberflächenspannung zur Kugelbildung neigt, können bei dieser Variante insbesondere Hohlräume überbrückt werden, die nach dem Sintern noch vorhanden sein könnten. Die genannten Schichtdicken des Sintermaterials bzw. des Lots beziehen sich dabei auf den Status der Anordnung, bevor die beiden Verbindungen durch Erhitzen und ggf. Ausüben von Druck geschaffen werden.According to the first variant, in which soldering can take place first and then sintering, the layer thickness of the sintered material is therefore smaller than the layer thickness of the solder. And according to the second variant, in which first sintering and then soldering can take place, the layer thickness of the sintered material is therefore greater than the layer thickness of the solder. Since the solder tends to form balls when it melts due to surface tension, this variant can be used in particular to bridge cavities that could still be present after sintering. The mentioned layer thicknesses of the sintered material or the solder relate to the status of the arrangement before the two connections are created by heating and possibly applying pressure.

Vorzugsweise ist dabei die dickere Schicht um 10 % bis 40 % dicker als die dünnere Schicht, vorzugsweise 15 % bis 25 %. In einigen Beispielen ist die dickere Schicht dabei ca. 10 µm bis 40 µm dicker als die dünnere Schicht, vorzugsweise 15 µm bis 25 µm.The thicker layer is preferably 10% to 40% thicker than the thinner layer, preferably 15% to 25%. In some examples, the thicker layer is about 10 µm to 40 µm thicker than the thinner layer, preferably 15 µm to 25 µm.

Bei einer alternativen vorteilhaften Ausgestaltung der Erfindung ist die Schmelztemperatur des Lots im Wesentlichen gleich der Sintertemperatur.In an alternative advantageous embodiment of the invention, the melting temperature of the solder is essentially the same as the sintering temperature.

Gemäß dieser weiteren Variante kann praktisch gleichzeitig gelötet und gesintert werden. Hierzu können ein Lot und ein Sinterwerkstoff verwendet werden, wobei die Schmelztemperatur des Lots im Wesentlichen der Sintertemperatur entspricht. Als im Wesentlichen gleiche Temperaturen werden dabei solche angesehen, die sich weniger als 10 K, insb. weniger als 5 K, voneinander unterscheiden. Dabei kann die Sintertemperatur ggf. von der Ausübung von Druck auf die Zwischenschicht bzw. Anordnung abhängen. Insbesondere können die Temperaturen beim Sinter- und Lötprozess je nach Löt- und Sinterverfahren recht ähnlich sein, zum Beispiel ca. 240° zum Aufschmelzen des Lotes und zum Sintern. Somit ist das Erhitzen der Zwischenschicht bzw. der Anordnung zum Zweck des Sinterns ausreichend, um ein Aufschmelzen des Lotes und eine zuverlässige Ausbildung der Lötstelle zu gewährleisten. Insbesondere braucht der Sinterprozess deshalb nicht speziell angepasst werden. Von Vorteil ist bei dieser Variante, dass die Lotverbindung und die Sinterverbindung besonders leicht in einem Arbeitsschritt hergestellt werden können.According to this further variant, soldering and sintering can take place practically simultaneously. A solder and a sintered material can be used for this purpose, with the melting temperature of the solder essentially corresponding to the sintering temperature. Temperatures that differ from one another by less than 10 K, especially less than 5 K, are regarded as essentially the same. In this case, the sintering temperature may depend on the exertion of pressure on the intermediate layer or arrangement. In particular, the temperatures during the sintering and soldering process can be very similar depending on the soldering and sintering process, for example approx. 240° for melting the solder and for sintering. Thus, heating the intermediate layer or the arrangement for the purpose of sintering is sufficient to ensure melting of the solder and reliable formation of the soldering point. In particular, the sintering process therefore does not need to be specially adapted. The advantage of this variant is that the soldered connection and the sintered connection can be produced particularly easily in one work step.

In manchen Beispielen kann die Schichtdicke des Lot-Preforms etwas dicker als die Schichtdicke des Sinter-Werkstoffs gewählt werden, d.h. bspw. um 5 % bis 15 % bzw. ca. 5 µm bis 15 µm dicker. Die genannten Schichtdicken des Sintermaterials bzw. des Lots beziehen sich dabei auf den Status der Anordnung, bevor die beiden Verbindungen durch Erhitzen und ggf. Ausüben von Druck geschaffen werden.In some examples, the layer thickness of the solder preform can be selected to be slightly thicker than the layer thickness of the sintered material, i.e. 5% to 15% or approximately 5 µm to 15 µm thicker. The mentioned layer thicknesses of the sintered material or the solder relate to the status of the arrangement before the two connections are created by heating and possibly applying pressure.

Bei einer weiteren vorteilhaften Ausgestaltung der Erfindung ist dabei die Schichtdicke des Sintermaterials für den mittels Sinterns hergestellten Fügebereich im Wesentlichen gleich der Schichtdicke des Lots für den jeweiligen Lotbereich.In a further advantageous embodiment of the invention, the layer thickness of the sintered material is essentially the same for the joining area produced by means of sintering equal to the layer thickness of the solder for the respective solder area.

Vorzugsweise entspricht die Dicke des Lot-Preforms im Wesentlichen der Dicke des Sinter-Werkstoffs, bevor die beiden Verbindungen durch Erhitzen und ggf. Ausüben von Druck geschaffen werden. Insbesondere ist die Dicke des Lot-Preforms bis auf weniger als ± 10 µm bzw. ± 10 %, vorzugsweise weniger als ± 5 µm bzw. ± 5 %, gleich der Dicke des Sinter-Werkstoffs. Die genannten Schichtdicken des Sintermaterials bzw. des Lots beziehen sich dabei auf den Status der Anordnung, bevor die beiden Verbindungen durch Erhitzen und ggf. Ausüben von Druck geschaffen werden.The thickness of the solder preform preferably essentially corresponds to the thickness of the sintered material before the two connections are created by heating and possibly applying pressure. In particular, the thickness of the solder preform is equal to the thickness of the sintered material up to less than ±10 μm or ±10%, preferably less than ±5 μm or ±5%. The mentioned layer thicknesses of the sintered material or the solder relate to the status of the arrangement before the two connections are created by heating and possibly applying pressure.

Das oben erläuterte, vorgeschlagene Verfahren zur Herstellung des vorgeschlagenen Leistungsmoduls kann dabei insbesondere die im Zusammenhang mit den erläuterten vorteilhaften Ausgestaltungen Leistungsmoduls erläuterten Verfahrensschritte umfassen. Dies betrifft insbesondere die erläuterten Verfahrensschritte zur Herstellung der Zwischenschicht bzw. des jeweiligen Lotbereichs und ggf. des mittels Sinters hergestellten Fügebereichs.The proposed method explained above for producing the proposed power module can in particular include the method steps explained in connection with the explained advantageous configurations of the power module. This relates in particular to the method steps explained for producing the intermediate layer or the respective soldering area and possibly the joining area produced by means of sintering.

Im Folgenden wird die Erfindung anhand der in den Figuren dargestellten Ausführungsbeispiele näher beschrieben und erläutert. Es zeigen:

FIG 1-2
ein erstes und zweites Ausführungsbeispiel des vorgeschlagenen Leistungsmoduls,
FIG 3-6
ein Ablaufdiagramm eines ersten bis vierten Ausführungsbeispiels des vorgeschlagenen Verfahrens,
FIG 7
einen ersten Zwischenstand bei der Herstellung eines dritten Ausführungsbeispiel des vorgeschlagenen Leistungsmoduls,
FIG 8-9
einen ersten und zweiten Zwischenstand bei der Herstellung eines vierten Ausführungsbeispiels des vorgeschlagenen Leistungsmoduls,
FIG 10-11
Querschnitte durch ein fünftes Ausführungsbeispiel des vorgeschlagenen Leistungsmoduls, und
FIG 12
ein Ausführungsbeispiel des vorgeschlagenen elektrischen Gerätes.
The invention is described and explained in more detail below with reference to the exemplary embodiments illustrated in the figures. Show it:
1-2
a first and second embodiment of the proposed power module,
3-6
a flowchart of a first to fourth exemplary embodiment of the proposed method,
FIG 7
a first intermediate status in the production of a third exemplary embodiment of the proposed power module,
8-9
a first and second intermediate status in the manufacture of a fourth exemplary embodiment of the proposed power module,
10-11
Cross sections through a fifth embodiment of the proposed power module, and
12
an embodiment of the proposed electrical device.

Figur 1 zeigt ein erstes Ausführungsbeispiel des vorgeschlagenen Leistungsmoduls 1, wobei ein Querschnitt durch das Leistungsmodul 1 dargestellt ist. figure 1 shows a first embodiment of the proposed power module 1, wherein a cross section through the power module 1 is shown.

Das Leistungsmodul 1 weist ein Substrat 2 auf, auf welchem eine elektrisch leitende Zwischenschicht 3 angeordnet ist. Die Zwischenschicht 3 weist einen mittels Sinterns hergestellten Fügebereich 4 auf. Weiterhin weist das Leistungsmodul 1 ein Leistungs-Bauelement 5 auf, welches auf der Zwischenschicht 3 angeordnet ist und welches eine oder mehrere mit der Zwischenschicht 3 verbundene Anschlussstelle(n) 6 aufweist. Ferner weist die Zwischenschicht 3 im Bereich der Anschlussstelle 6 einen Lotbereich 7 auf, welcher mit der Anschlussstelle 6 verbunden ist und welcher mittels eines Lot-Preforms hergestellt ist.The power module 1 has a substrate 2 on which an electrically conductive intermediate layer 3 is arranged. The intermediate layer 3 has a joining area 4 produced by sintering. Furthermore, the power module 1 has a power component 5 which is arranged on the intermediate layer 3 and which has one or more connection point(s) 6 connected to the intermediate layer 3 . Furthermore, the intermediate layer 3 has a solder area 7 in the area of the connection point 6, which is connected to the connection point 6 and which is produced by means of a solder preform.

Die Anschlussstelle 6 kann insbesondere als Steueranschluss des Leistungs-Bauelements 5 eingesetzt werden. Weiterhin kann das Leistungs-Bauelement 5 zusätzlich eine weitere Anschlussstelle aufweisen, welche dem mittels Sinterns hergestellten Fügebereich 4 zugewandt ist und als Lastanschluss des Leistungs-Bauelements 5 eingesetzt werden kann. Prinzipiell sind auch mehrere solcher weiterer Anschlussstellen denkbar, welche jeweils als Lastanschluss des jeweiligen Leistungs-Bauelements 5 eingesetzt werden können.The connection point 6 can be used in particular as a control connection for the power component 5 . Furthermore, the power component 5 can additionally have a further connection point, which faces the joining area 4 produced by sintering and can be used as a load connection of the power component 5 . In principle, several such additional connection points are also conceivable, which can each be used as a load connection of the respective power component 5 .

Vorzugsweise sind dabei sowohl bei dem Leistungs-Bauelement 5 als auch auf dem Substrat 2 bereits Anschlussstrukturen zur Kontaktierung der Zwischenschicht 3 vorhanden. So kann insbesondere das Substrat 2 strukturiert ausgeführt sein, wobei die genannten Strukturen in Figur 1 nicht näher dargestellt sind. Die Strukturierung kann z.B. dadurch erreicht werden, dass das Substrat 2 eine elektrisch leitendende Oberfläche aufweist, welche der Zwischenschicht 3 zugewandt ist, wobei diese Oberfläche elektrisch nichtleitende Aussparungen bzw. Lücken aufweist, wodurch zwei oder mehr Bereiche dieser Oberfläche elektrisch voneinander isoliert sind. Damit kann insbesondere auch eine elektrische Isolierung des Lotbereichs 7 vom mittels Sinterns hergestellten Fügebereich 4 geschaffen werden. Beispielsweise kann das Substrat 2 auch mehrlagig ausgestaltet sein.Connection structures for contacting the intermediate layer 3 are preferably already present both in the power component 5 and on the substrate 2 . In particular, the substrate 2 can be structured, with the structures mentioned in figure 1 are not shown in detail. The structuring can be achieved, for example, by the substrate 2 having an electrically conductive surface which faces the intermediate layer 3, this surface having electrically non-conductive recesses or gaps, whereby two or more areas of this surface are electrically insulated from one another. In this way, in particular, an electrical insulation of the soldering area 7 from the joining area 4 produced by means of sintering can also be created. For example, the substrate 2 can also be configured in multiple layers.

Der gesinterte Fügebereich 4 kann bspw. mittels eines Sinter-Preforms hergestellt sein. Alternativ oder zusätzlich kann der gesinterte Fügebereich 4 mittels 3-D-Druckes, mittels eines Beschichtungsverfahrens oder mittels Sieb-/Schablonendruckes ausgebildet sein.The sintered joining area 4 can be produced, for example, by means of a sintered preform. Alternatively or additionally, the sintered joining area 4 can be formed by means of 3D printing, by means of a coating process or by means of screen/stencil printing.

Insbesondere kann der jeweilige Lotbereich 7 bzw. das jeweilige Lot-Preform flussmittelfrei sein.In particular, the respective soldering area 7 or the respective soldering preform can be free of flux.

Wie in Figur 1 dargestellt, können der gesinterte Fügebereich 4 und der Lotbereich 7 zwischen dem Substrat 2 und dem Leistungs-Bauelement 5 nebeneinander angeordnet sein und im Wesentlichen dieselbe Schichtdicke 9 aufweisen.As in figure 1 shown, the sintered joining area 4 and the soldering area 7 can be arranged next to one another between the substrate 2 and the power component 5 and have essentially the same layer thickness 9 .

Vorzugsweise weist der jeweilige Lotbereich 7 einen Querschnitt von höchstens ca. 9 mm2, insbesondere von höchstens 4 mm2, auf, wobei eine Ebene parallel zur flachen Oberseite des Substrats 2 betrachtet wird.The respective solder region 7 preferably has a cross section of at most approx. 9 mm 2 , in particular at most 4 mm 2 , with a plane being considered parallel to the flat upper side of the substrate 2 .

Beispielsweise kann das Substrat 2 ein Direct-Bonded-Copper(DCB)-Substrat, ein Insulated-Metal-Substrate (IMS), ein Active-Metal-Brazing(AMB)-Substrat oder eine Leiterplatte umfassen.For example, the substrate 2 can comprise a direct bonded copper (DCB) substrate, an insulated metal substrate (IMS), an active metal brazing (AMB) substrate or a printed circuit board.

Figur 2 zeigt ein zweites Ausführungsbeispiel des vorgeschlagenen Leistungsmoduls 1, wobei wiederum ein Querschnitt durch das Leistungsmodul 1 dargestellt ist. Gleiche Bezugszeichen wie in Figur 1 bezeichnen dabei gleiche Gegenstände. figure 2 shows a second exemplary embodiment of the proposed power module 1, again showing a cross section through the power module 1. Same reference numbers as in figure 1 denote the same objects.

Das Substrat 2 weist an seiner, der Zwischenschicht 3 zugewandten Seite eine Edelmetalloberfläche 8 auf, bspw. aufweisend Gold oder Silber. Dabei umfasst das Substrat 2 ein Direct-Bonded-Copper(DCB)-Substrat, ein Insulated-Metal-Substrate (IMS), ein Active-Metal-Brazing(AMB)-Substrat oder eine Leiterplatte.On its side facing the intermediate layer 3, the substrate 2 has a noble metal surface 8, for example containing gold or silver. In this case, the substrate 2 comprises a direct bonded copper (DCB) substrate, an insulated metal substrate (IMS), an active metal brazing (AMB) substrate or a printed circuit board.

Vorzugsweise sind dabei sowohl bei dem Leistungs-Bauelement 5 als auch auf dem Substrat 2, insbesondere bzgl. der Edelmetalloberfläche 8, bereits Anschlussstrukturen zur Kontaktierung der Zwischenschicht 3 vorhanden. So kann insbesondere die Edelmetalloberfläche 8 strukturiert ausgeführt sein, wobei die genannten Strukturen in Figur 2 nicht näher dargestellt sind. Die Strukturierung kann z.B. dadurch erreicht werden, dass die Edelmetalloberfläche 8 eine elektrisch leitendende Oberfläche ausbildet, wobei diese Oberfläche elektrisch nichtleitende Aussparungen bzw. Lücken aufweist, wodurch zwei oder mehr Bereiche dieser Oberfläche elektrisch voneinander isoliert sind. Damit kann insbesondere auch eine elektrische Isolierung des Lotbereichs 7 vom mittels Sinterns hergestellten Fügebereich 4 geschaffen werden. Beispielsweise kann das Substrat 2 auch mehrlagig ausgestaltet sein.Connection structures for contacting the intermediate layer 3 are preferably already present both in the power component 5 and on the substrate 2 , in particular with regard to the noble metal surface 8 . In particular, the noble metal surface 8 can be structured, with the structures mentioned in figure 2 are not shown in detail. The structuring can be achieved, for example, in that the noble metal surface 8 forms an electrically conductive surface, this surface having electrically non-conductive recesses or gaps, as a result of which two or more areas of this surface are electrically insulated from one another. In this way, in particular, an electrical insulation of the soldering area 7 from the joining area 4 produced by means of sintering can also be created. For example, the substrate 2 can also be configured in multiple layers.

Weiterhin weist das Leistungsmodul 1 zwei Anschlussstellen 6 auf und die Zwischenschicht weist zwei Lotbereiche 7 auf. Dabei ist der jeweilige Lotbereich 7 im Bereich der jeweiligen Anschlussstelle 6 angeordnet und mit der jeweiligen Anschlussstelle 6 verbunden. Der jeweilige Lotbereich 7 ist dabei mittels eines Lot-Preforms hergestellt.Furthermore, the power module 1 has two connection points 6 and the intermediate layer has two solder areas 7 . The respective solder area 7 is arranged in the area of the respective connection point 6 and is connected to the respective connection point 6 . The respective solder area 7 is produced by means of a solder preform.

Die zwei Anschlussstellen 6 werden insbesondere als Steueranschlüsse des Leistungs-Bauelements 5 eingesetzt. Das Leistungs-Bauelement 5 kann zusätzlich eine oder mehrere weitere Anschlussstelle(n) aufweisen, welche dem mittels Sinterns hergestellten Fügebereich 4 zugewandt ist bzw. sind und als Lastanschluss bzw. Lastanschlüsse des Leistungs-Bauelements 5 eingesetzt werden kann bzw. können.The two connection points 6 are used in particular as control connections of the power component 5 . The power component 5 can additionally have one or more further connection point(s), which faces the joining area 4 produced by sintering and can be used as a load connection or load connections of the power component 5 .

Figur 3 zeigt ein Ablaufdiagramm 300 eines erstes Ausführungsbeispiels des vorgeschlagenen Verfahrens. Der Ablauf startet mit Schritt 302 und umfasst zumindest die folgenden Schritte. Bei Schritt 304 wird das Substrat bereitgestellt. Bei Schritt 306 werden das Sintermaterial für den gesinterte Fügebereich und das Lot für den jeweiligen Lotbereich auf dem Substrat zur Ausbildung der Zwischenschicht bereitgestellt, wobei das Lot für den jeweiligen Lotbereich im Bereich der jeweiligen Anschlussstelle des jeweiligen Leistungs-Bauelements und als Lot-Preform bereitgestellt wird. Bei Schritt 308 wird das jeweilige Leistungs-Bauelement auf dem mittels Sinterns hergestellten Fügebereich und dem jeweiligen Lotbereich bzw. auf der Zwischenschicht angeordnet. Bei Schritt 310 wird die Zwischenschicht auf die Schmelztemperatur des Lots bzw. auf die Sintertemperatur erhitzt. Der Ablauf endet mit Schritt 312. figure 3 shows a flow chart 300 of a first exemplary embodiment of the proposed method. The process starts with step 302 and includes at least the following steps. At step 304, the substrate is provided. In step 306, the sintering material for the sintered joining area and the solder for the respective solder area are provided on the substrate to form the intermediate layer, the solder for the respective solder area being provided in the area of the respective connection point of the respective power component and as a solder preform . In step 308, the respective power component is arranged on the joining area produced by sintering and the respective solder area or on the intermediate layer. At step 310, the interface layer is heated to the solder melting or sintering temperature. The process ends with step 312.

Bei vorteilhaften Ausgestaltungen des Verfahrens kann das Ablaufdiagramm noch weitere Schritte umfassen, die weiter oben und unten erläutert werden.In advantageous refinements of the method, the flow chart can also include further steps, which are explained further above and below.

Figur 4 zeigt ein Ablaufdiagramm eines zweiten Ausführungsbeispiels des vorgeschlagenen Verfahrens. Das Substrat 2, das Sintermaterial für den gesinterte Fügebereich 4, das Lot-Preform für den Lotbereich 7 und das Leistungs-Bauelement 5 werden bereitgestellt und passend angeordnet. Lediglich aus Gründen der Übersichtlichkeit wird dabei die jeweilige Anschlussstelle 6 in Figur 4 nicht näher dargestellt. figure 4 shows a flowchart of a second embodiment of the proposed method. The substrate 2, the sintering material for the sintered joining area 4, the solder preform for the soldering area 7 and the power component 5 are provided and arranged appropriately. Only for reasons of clarity, the respective connection point 6 in figure 4 not shown in detail.

Bei diesem Ausführungsbeispiel wird zunächst gelötet und anschließend gesintert. Hierzu kann insbesondere ein niederschmelzendes Lot verwendet werden, welches eine Schmelztemperatur aufweist, die kleiner als die Sintertemperatur ist. Während des Herstellungsprozesses des vorgeschlagenen Leistungsmoduls 1 wird die Zwischenschicht 3 bzw. Anordnung zunächst auf die Schmelztemperatur des Lots erhitzt, wodurch die Lotverbindung geschaffen wird. Das Lot bleibt dabei vorzugsweise schmelzflüssig. Dann wird die Zwischenschicht 3 bzw. Anordnung durch weitere Temperaturerhöhung auf die Sintertemperatur erhitzt und ggf. Druck auf die Zwischenschicht 3 bzw. Anordnung ausgeübt, wodurch die Sinterverbindung geschaffen wird. Die Schaffung der Sinterverbindung kann dabei in einem Prozessschritt zusammen mit der Schaffung der Lotverbindung oder in einem, davon abgetrennten Prozessschritten durchgeführt werden.In this exemplary embodiment, soldering takes place first and then sintering. In particular, a low-melting solder can be used for this purpose, which has a melting temperature that is lower than the sintering temperature. During the manufacturing process of the proposed power module 1, the intermediate layer 3 or arrangement is first heated to the melting temperature of the solder, as a result of which the solder connection is created. The solder preferably remains molten. Then the intermediate layer becomes 3 or arrangement is heated to the sintering temperature by a further increase in temperature and, if necessary, pressure is exerted on the intermediate layer 3 or arrangement, as a result of which the sintered connection is created. The creation of the sintered connection can be carried out in one process step together with the creation of the soldered connection or in a process step separate therefrom.

Vorzugsweise ist dabei das Lot-Preform um 10 % bis 40 % dicker als der Sinter-Werkstoff, vorzugsweise 15 % bis 25 %. In einigen Beispielen ist das Lot-Preform dabei ca. 10 µm bis 40 µm dicker als der Sinter-Werkstoff, vorzugsweise 15 µm bis 25 µm. Die genannten Schichtdicken des Sintermaterials bzw. des Lots beziehen sich dabei auf den Status der Anordnung, bevor die beiden Verbindungen durch Erhitzen und ggf. Ausüben von Druck geschaffen werden.The solder preform is preferably 10% to 40% thicker than the sintered material, preferably 15% to 25%. In some examples, the solder preform is about 10 μm to 40 μm thicker than the sintered material, preferably 15 μm to 25 μm. The mentioned layer thicknesses of the sintered material or the solder relate to the status of the arrangement before the two connections are created by heating and possibly applying pressure.

Figur 5 zeigt ein Ablaufdiagramm eines dritten Ausführungsbeispiels des vorgeschlagenen Verfahrens. Wiederum werden das Substrat 2, das Sintermaterial für den Fügebereich 4, das Lot-Preform für den Lotbereich 7 und das Leistungs-Bauelement 5 bereitgestellt und passend angeordnet. Ebenfalls lediglich aus Gründen der Übersichtlichkeit wird dabei die jeweilige Anschlussstelle 6 in Figur 5 nicht näher dargestellt. figure 5 shows a flowchart of a third exemplary embodiment of the proposed method. Once again, the substrate 2, the sintered material for the joining area 4, the solder preform for the soldering area 7 and the power component 5 are provided and suitably arranged. Also only for reasons of clarity, the respective connection point 6 in figure 5 not shown in detail.

Gemäß diesem Ausführungsbeispiel wird praktisch gleichzeitig gelötet und gesintert. Hierzu können ein Lot und ein Sinterwerkstoff verwendet werden, wobei die Schmelztemperatur des Lots im Wesentlichen der Sintertemperatur entspricht. Insbesondere können die Temperaturen beim Sinter- und Lötprozess je nach Löt- und Sinterverfahren recht ähnlich sein, zum Beispiel ca. 240° zum Aufschmelzen des Lotes und zum Sintern. Somit ist das Erhitzen der Zwischenschicht 3 bzw. der Anordnung zum Zweck des Sinterns ausreichend, um ein Aufschmelzen des Lotes und eine zuverlässige Ausbildung der Lötstelle zu gewährleisten. Insbesondere braucht der Sinterprozess deshalb nicht speziell angepasst werden. Von Vorteil ist bei dieser Variante, dass die Lotverbindung und die Sinterverbindung besonders leicht in einem Arbeitsschritt hergestellt werden können.According to this exemplary embodiment, soldering and sintering take place practically simultaneously. A solder and a sintered material can be used for this purpose, with the melting temperature of the solder essentially corresponding to the sintering temperature. In particular, the temperatures during the sintering and soldering process can be very similar depending on the soldering and sintering process, for example approx. 240° for melting the solder and for sintering. Thus, the heating of the intermediate layer 3 or the arrangement for the purpose of sintering is sufficient to ensure melting of the solder and reliable formation of the soldering point. In particular, the sintering process therefore does not need to be specially adapted. The advantage of this variant is that the soldered connection and the sintered connection are particularly can easily be made in one step.

Vorzugsweise entspricht die Dicke des Lot-Preforms im Wesentlichen der Dicke des Sinter-Werkstoffs, bevor die beiden Verbindungen durch Erhitzen und ggf. Ausüben von Druck geschaffen werden. Insbesondere ist die Dicke des Lot-Preforms bis auf weniger als ± 10 µm bzw. ± 10 %, vorzugsweise weniger als ± 5 µm bzw. ± 5 %, gleich der Dicke des Sinter-Werkstoffs.The thickness of the solder preform preferably essentially corresponds to the thickness of the sintered material before the two connections are created by heating and possibly applying pressure. In particular, the thickness of the solder preform is equal to the thickness of the sintered material up to less than ±10 μm or ±10%, preferably less than ±5 μm or ±5%.

In manchen Beispielen kann die Schichtdicke 9 des Lot-Preforms etwas dicker als die Schichtdicke 9 des Sinter-Werkstoffs gewählt werden, d.h. bspw. um 5 % bis 15 % bzw. ca. 5 µm bis 15 µm dicker. Die genannten Schichtdicken des Sintermaterials bzw. des Lots beziehen sich dabei auf den Status der Anordnung, bevor die beiden Verbindungen durch Erhitzen und ggf. Ausüben von Druck geschaffen werden.In some examples, the layer thickness 9 of the solder preform can be selected to be somewhat thicker than the layer thickness 9 of the sintered material, i.e., for example, 5% to 15% or approximately 5 μm to 15 μm thicker. The mentioned layer thicknesses of the sintered material or the solder relate to the status of the arrangement before the two connections are created by heating and possibly applying pressure.

Figur 6 zeigt ein Ablaufdiagramm eines vierten Ausführungsbeispiels des vorgeschlagenen Verfahrens. Wiederum werden das Substrat 2, das Sintermaterial für den Fügebereich 4, das Lot-Preform für den Lotbereich 7 und das Leistungs-Bauelement 5 bereitgestellt und passend angeordnet. Wiederum lediglich aus Gründen der Übersichtlichkeit wird dabei die jeweilige Anschlussstelle 6 in Figur 6 nicht näher dargestellt. figure 6 shows a flow chart of a fourth exemplary embodiment of the proposed method. Once again, the substrate 2, the sintered material for the joining area 4, the solder preform for the soldering area 7 and the power component 5 are provided and suitably arranged. Again, only for reasons of clarity, the respective connection point 6 in figure 6 not shown in detail.

Gemäß diesem Ausführungsbeispiel wird zunächst gesintert und anschließend gelötet. Hierzu kann insbesondere ein hochschmelzendes Lot verwendet werden, welches eine Schmelztemperatur aufweist, die größer als die Sintertemperatur ist. Während des Herstellungsprozesses des vorgeschlagenen Leistungsmoduls 1 wird die Zwischenschicht 3 bzw. Anordnung zunächst auf die Sintertemperatur erhitzt und ggf. Druck auf die Zwischenschicht bzw. Anordnung ausgeübt, wodurch die Sinterverbindung geschaffen wird. Dann wird die Zwischenschicht 3 bzw. die Anordnung durch weitere Temperaturerhöhung auf die Schmelztemperatur des Lots erhitzt, wodurch die Lotverbindung geschaffen wird. Die Schaffung der Lotverbindung kann dabei in einem Prozessschritt zusammen mit der Schaffung der Sinterverbindung oder in einem, davon abgetrennten Prozessschritten durchgeführt werden.According to this exemplary embodiment, sintering is carried out first and then soldering. In particular, a high-melting solder can be used for this purpose, which has a melting temperature that is higher than the sintering temperature. During the manufacturing process of the proposed power module 1, the intermediate layer 3 or arrangement is first heated to the sintering temperature and, if necessary, pressure is exerted on the intermediate layer or arrangement, as a result of which the sintered connection is created. Then the intermediate layer 3 or the arrangement is heated to the melting temperature of the solder by a further increase in temperature, as a result of which the solder connection is created. The creation of the solder connection can be carried out in a process step together with the creation of the sintered connection or in a separate process step.

Vorzugsweise ist dabei der Sinter-Werkstoff um 10 % bis 40 % dicker als das Lot-Preform, vorzugsweise 15 % bis 25 %. In einigen Beispielen ist der Sinter-Werkstoff dabei ca. 10 µm bis 40 µm dicker als das Lot-Preform, vorzugsweise 15 µm bis 25 µm. Die genannten Schichtdicken des Sintermaterials bzw. des Lots beziehen sich dabei auf den Status der Anordnung, bevor die beiden Verbindungen durch Erhitzen und ggf. Ausüben von Druck geschaffen werden.The sintered material is preferably 10% to 40% thicker than the solder preform, preferably 15% to 25%. In some examples, the sintered material is approximately 10 μm to 40 μm thicker than the solder preform, preferably 15 μm to 25 μm. The mentioned layer thicknesses of the sintered material or the solder relate to the status of the arrangement before the two connections are created by heating and possibly applying pressure.

Figur 7 zeigt einen ersten Zwischenstand bei der Herstellung eines dritten Ausführungsbeispiels des vorgeschlagenen Leistungsmoduls 1. Dargestellt ist dabei eine Draufsicht auf das Substrat 2, auf welchem bei diesem dritten Ausführungsbeispiel eine Sinter-Paste für den Fügebereich 4 aufgebracht ist. Ferner ist auf das Substrat 2 ein Lot-Preform für den Lotbereich 7 aufgebracht, wobei der Lotbereich 7 beabstandet von dem Fügebereich 4 angeordnet ist. figure 7 shows a first intermediate stage in the production of a third exemplary embodiment of the proposed power module 1. A top view of the substrate 2 is shown, on which a sintering paste for the joining region 4 is applied in this third exemplary embodiment. Furthermore, a solder preform for the solder area 7 is applied to the substrate 2 , the solder area 7 being arranged at a distance from the joining area 4 .

Figuren 8 und 9 zeigen einen ersten und zweiten Zwischenstand bei der Herstellung eines vierten Ausführungsbeispiels des vorgeschlagenen Leistungsmoduls 1. Wie auch bei dem in der Figur 7 dargestellten dritten Ausführungsbeispiel, ist wiederum eine Draufsicht auf das Substrat 2 dargestellt. Wie in Figur 8 dargestellt, sind auf dem Substrat 2 ein Sinter-Preform für den gesinterte Fügebereich 4 ein Lot-Preform für den Lotbereich 7 aufgebracht, wobei der Lotbereich 7 wiederum beabstandet von dem gesinterte Fügebereich 4 angeordnet ist. Wie in Figur 9 dargestellt ist, ist das Leistungs-Bauelement 5 mit dem gesinterte Fügebereich 4 und dem Lotbereich 7 verbunden und deckt diese bei der dargestellten Draufsicht nunmehr ab. Figures 8 and 9 show a first and second intermediate status in the production of a fourth exemplary embodiment of the proposed power module 1. As in the case of FIG figure 7 illustrated third exemplary embodiment, a plan view of the substrate 2 is again illustrated. As in figure 8 shown, a sintered preform for the sintered joining area 4 and a solder preform for the soldering area 7 are applied to the substrate 2 , the soldering area 7 in turn being arranged at a distance from the sintered joining area 4 . As in figure 9 is shown, the power component 5 is connected to the sintered joining area 4 and the soldering area 7 and now covers them in the top view shown.

Figuren 10 und 11 zeigen Querschnitte durch ein fünftes Ausführungsbeispiel des vorgeschlagenen Leistungsmoduls 1. Figures 10 and 11 show cross sections through a fifth exemplary embodiment of the proposed power module 1.

Figur 10 zeigt dabei den Querschnitt durch den gesinterte Fügebereich 4 des Leistungsmoduls 1. Für diesen gesinterte Fügebereich 4 wurde ein Sinter-Preform verwendet, welches nach dem Sintern einen harten Sinterkern 4" aufweist. Der gesinterte Fügebereich 4 umfasst weiterhin zwei, teils während des Sinterns ausgebildete Randbereiche 4', von denen einer zwischen dem Sinterkern 4" und dem Substrat 2 und der andere zwischen dem Sinterkern 4" und dem Leistungs-Bauelement 5 angeordnet ist. Beispielsweise kann der gesinterte Fügebereich 4 einen als Vollmaterial ausgestalteten Sinterkern 4" aufweisen, welcher auf beiden Seiten, das heißt zum Leistungs-Bauelement 5 hin und zum Substrat 2 hin, jeweils ein Sintermaterial aufweist. Zusätzlich wäre auch ein geschichteter, gesinterte Fügebereich 4 denkbar, bei welchem sich Sintermaterial und Vollmaterial schichtweise abwechseln, z.B. Sintermaterial-Vollmaterial-Sintermaterial-Vollmaterial-Sintermaterial. figure 10 shows the cross section through the sintered joining area 4 of the power module 1. A sintered preform was used for this sintered joining area 4, which has a hard sintered core 4" after sintering. The sintered joining area 4 also includes two edge areas, some of which were formed during sintering 4′, one of which is arranged between the sintered core 4″ and the substrate 2 and the other between the sintered core 4″ and the power component 5. For example, the sintered joining region 4 can have a sintered core 4″ designed as a solid material, which is located on both Sides, that is, towards the power component 5 and towards the substrate 2, each have a sintered material. In addition, a layered, sintered joining area 4 would also be conceivable, in which sintered material and solid material alternate in layers, eg sintered material-solid material-sintered material-solid material-sintered material.

Figur 11 zeigt dabei den Querschnitt durch den Lotbereich 7 des Leistungsmoduls 1. Für diesen Lotbereich 7 wurde ein Lot-Preform verwendet. Weiterhin ist eine Anschlussstelle 6 dargestellt, welche zwischen dem übrigen Leistungs-Bauelement 5 und dem Lotbereich 7 angeordnet ist. Der Lotbereich 7 ist dabei zwischen der Anschlussstelle 6 und dem Substrat 7 angeordnet. figure 11 12 shows the cross section through the soldering area 7 of the power module 1. A soldering preform was used for this soldering area 7. FIG. Furthermore, a connection point 6 is shown, which is arranged between the rest of the power component 5 and the soldering area 7 . The solder area 7 is arranged between the connection point 6 and the substrate 7 .

Figur 12 zeigt ein Ausführungsbeispiel des vorgeschlagenen elektrischen Gerätes 10. Das elektrische Gerät 10 weist das vorgeschlagene Leistungsmodul 1 auf. Bspw. ist das elektrische Gerät 10 als Umrichter ausgestaltet. figure 12 shows an embodiment of the proposed electrical device 10. The electrical device 10 has the proposed power module 1 on. For example, the electrical device 10 is designed as a converter.

Claims (13)

Leistungsmodul (1) umfassend - ein Substrat (2), - eine elektrisch leitende Zwischenschicht (3), welche auf dem Substrat (2) angeordnet ist und welche einen mittels Sinters hergestellten Fügebereich (4) aufweist, und - zumindest ein Leistungs-Bauelement (5), welches jeweils auf der Zwischenschicht (3) angeordnet ist und welches jeweils zumindest eine mit der Zwischenschicht (3) verbundene Anschlussstelle (6) aufweist,
gekennzeichnet dadurch, dass - die Zwischenschicht (3) im Bereich der jeweiligen Anschlussstelle (6) einen mittels eines Lot-Preforms hergestellten Lotbereich (7) aufweist, welcher mit der jeweiligen Anschlussstelle (6) verbunden ist. Power module (1) comprising - a substrate (2), - an electrically conductive intermediate layer (3) which is arranged on the substrate (2) and which has a joining region (4) produced by means of sintering, and - at least one power component (5), which is arranged in each case on the intermediate layer (3) and which in each case has at least one connection point (6) connected to the intermediate layer (3),
characterized in that - The intermediate layer (3) in the region of the respective connection point (6) has a solder region (7) which is produced by means of a solder preform and which is connected to the respective connection point (6). Leistungsmodul (1) nach Anspruch 1,
wobei der mittels Sinters hergestellten Fügebereich (4) mittels eines Sinter-Preforms hergestellt ist.Power module (1) according to claim 1,
wherein the joining area (4) produced by means of sintering is produced by means of a sintered preform. Leistungsmodul (1) nach Anspruch 1,
wobei der mittels Sinters hergestellten Fügebereich (4) mittels 3D-Druckes, mittels eines Beschichtungsverfahrens oder mittels Sieb-/Schablonendruckes ausgebildet ist.Power module (1) according to claim 1,
wherein the joining area (4) produced by means of sintering is formed by means of 3D printing, by means of a coating process or by means of screen/stencil printing. Leistungsmodul (1) nach zumindest einem der vorhergehenden Ansprüche,
wobei der jeweilige Lotbereich (7) bzw. das jeweilige Lot-Preform flussmittelfrei ist.Power module (1) according to at least one of the preceding claims,
wherein the respective solder area (7) or the respective solder preform is free of flux. Leistungsmodul (1) nach zumindest einem der vorhergehenden Ansprüche,
wobei der mittels Sinters hergestellten Fügebereich (4) und der jeweilige Lotbereich (7) zwischen dem Substrat (2) und dem jeweiligen Leistungs-Bauelement (5) nebeneinander angeordnet sind und im Wesentlichen dieselbe Schichtdicke (9) aufweisen.Power module (1) according to at least one of the preceding claims,
wherein the joining area (4) produced by means of sintering and the respective soldering area (7) are arranged next to one another between the substrate (2) and the respective power component (5) and have essentially the same layer thickness (9). Leistungsmodul (1) nach zumindest einem der vorhergehenden Ansprüche,
wobei der jeweilige Lotbereich (7) einen Querschnitt von höchstens ca. 9 mm2, insb. von höchstens ca. 4 mm2, aufweist.Power module (1) according to at least one of the preceding claims,
the respective soldering area (7) having a cross section of at most approx. 9 mm 2 , in particular at most approx. 4 mm 2 . Leistungsmodul (1) nach zumindest einem der vorhergehenden Ansprüche,
wobei das Substrat (2) ein Direct-Bonded-Copper(DCB)-Substrat, ein Insulated-Metal-Substrate (IMS), ein Active-Metal-Brazing(AMB)-Substrat oder eine Leiterplatte umfasst, und
wobei das Substrat (2) an seiner, der Zwischenschicht (3) zugewandten Seite eine Edelmetalloberfläche (8) aufweist.Power module (1) according to at least one of the preceding claims,
wherein the substrate (2) comprises a direct bonded copper (DCB) substrate, an insulated metal substrate (IMS), an active metal brazing (AMB) substrate or a circuit board, and
the substrate (2) having a noble metal surface (8) on its side facing the intermediate layer (3). Elektrisches Gerät (10), insbesondere Umrichter, aufweisend zumindest ein Leistungsmodul (1) nach zumindest einem der vorhergehenden Ansprüche.Electrical device (10), in particular a converter, having at least one power module (1) according to at least one of the preceding claims. Verfahren zur Herstellung eines Leistungsmoduls (1) nach einem der Ansprüche 1 bis 6 umfassend die Verfahrensschritte: - Bereitstellen des Substrates (2), - Anordnen des Sintermaterials für den zu sinternden Fügebereich (4) und des Lots für den jeweiligen Lotbereich (7) auf dem Substrat (2) zur Ausbildung der Zwischenschicht (3),
wobei das Lot für den jeweiligen Lotbereich (7) im Bereich der jeweiligen Anschlussstelle (6) des jeweiligen Leistungs-Bauelements (5) als Lot-Preform bereitgestellt wird, - Anordnen des jeweiligen Leistungs-Bauelements (5) auf dem Fügebereich (4) und dem jeweiligen Lotbereich (7) bzw. auf der Zwischenschicht (3), und - Erhitzen der Zwischenschicht (3) auf die Schmelztemperatur des Lots bzw. auf die Sintertemperatur. Method for producing a power module (1) according to one of Claims 1 to 6, comprising the method steps: - Providing the substrate (2), - arranging the sintering material for the joining area (4) to be sintered and the solder for the respective soldering area (7) on the substrate (2) to form the intermediate layer (3),
wherein the solder for the respective solder area (7) in the area of the respective connection point (6) of the respective power component (5) is provided as a solder preform, - arranging the respective power component (5) on the joining area (4) and the respective solder area (7) or on the intermediate layer (3), and - Heating the intermediate layer (3) to the melting temperature of the solder or to the sintering temperature. Verfahren nach Anspruch 9, wobei die Zwischenschicht (3) auf die Schmelztemperatur des Lots erhitzt wird, wenn die Schmelztemperatur des Lots höher ist als die Sintertemperatur, oder auf die Sintertemperatur erhitzt wird, wenn die Sintertemperatur höher ist als die Schmelztemperatur des Lots.Method according to claim 9, wherein the intermediate layer (3) is heated to the melting temperature of the solder if the melting temperature of the solder is higher than the sintering temperature. or heated to the sintering temperature when the sintering temperature is higher than the melting temperature of the solder. Verfahren nach einem der Ansprüche 9 oder 10,
wobei die Schichtdicke (9) des Sintermaterials für den mittels Sinters hergestellten Fügebereich (4) größer bzw. kleiner ist als die Schichtdicke (9) des Lots für den jeweiligen Lotbereich (7), wenn die Sintertemperatur kleiner bzw. größer ist als die Schmelztemperatur des Lots.Method according to one of claims 9 or 10,
wherein the layer thickness (9) of the sintered material for the joining area (4) produced by means of sintering is larger or smaller than the layer thickness (9) of the solder for the respective soldering area (7) if the sintering temperature is lower or higher than the melting point of the Lots. Verfahren nach Anspruch 9, wobei die Schmelztemperatur des Lots im Wesentlichen gleich der Sintertemperatur ist.10. The method of claim 9, wherein the melting temperature of the solder is substantially equal to the sintering temperature. Verfahren nach einem der Ansprüche 9 oder 12, wobei die Schichtdicke (9) des Sintermaterials für den mittels Sinters hergestellten Fügebereich (4) im Wesentlichen gleich der Schichtdicke (9) des Lots für den jeweiligen Lotbereich (7) ist.Method according to one of Claims 9 or 12, the layer thickness (9) of the sintered material for the joining region (4) produced by means of sintering being essentially the same as the layer thickness (9) of the solder for the respective soldered region (7).
EP21157873.7A 2021-02-18 2021-02-18 Power module with a power component bonded to a substrate by sintering and soldering and corresponding manufacturing method Withdrawn EP4047648A1 (en)

Priority Applications (4)

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EP21157873.7A EP4047648A1 (en) 2021-02-18 2021-02-18 Power module with a power component bonded to a substrate by sintering and soldering and corresponding manufacturing method
CN202180094091.8A CN116888732A (en) 2021-02-18 2021-12-10 Power module, electrical device and method for producing a power module
EP21836119.4A EP4248493A1 (en) 2021-02-18 2021-12-10 Power module, electrical device and method for producing a power module
PCT/EP2021/085263 WO2022174955A1 (en) 2021-02-18 2021-12-10 Power module, electrical device and method for producing a power module

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