DE102006011743A1 - Peltier module manufacture method involves connecting Peltier components or chips to contact areas on ceramic substrates by means of terminal surfaces during production process, in which contact areas have metallic or sinter layers - Google Patents
Peltier module manufacture method involves connecting Peltier components or chips to contact areas on ceramic substrates by means of terminal surfaces during production process, in which contact areas have metallic or sinter layers Download PDFInfo
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- DE102006011743A1 DE102006011743A1 DE102006011743A DE102006011743A DE102006011743A1 DE 102006011743 A1 DE102006011743 A1 DE 102006011743A1 DE 102006011743 A DE102006011743 A DE 102006011743A DE 102006011743 A DE102006011743 A DE 102006011743A DE 102006011743 A1 DE102006011743 A1 DE 102006011743A1
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- Prior art keywords
- peltier
- sintering
- sintered
- peltier elements
- bonding
- Prior art date
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- Ceased
Links
- 238000000034 method Methods 0.000 title claims abstract description 63
- 239000000919 ceramic Substances 0.000 title claims abstract description 58
- 239000000758 substrate Substances 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000010949 copper Substances 0.000 claims abstract description 26
- 229910052802 copper Inorganic materials 0.000 claims abstract description 25
- 229910052709 silver Inorganic materials 0.000 claims abstract description 12
- 239000004332 silver Substances 0.000 claims abstract description 12
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 5
- 229910001316 Ag alloy Inorganic materials 0.000 claims abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000012777 electrically insulating material Substances 0.000 claims abstract 3
- 238000005245 sintering Methods 0.000 claims description 47
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 21
- 238000001465 metallisation Methods 0.000 claims description 18
- 229910052759 nickel Inorganic materials 0.000 claims description 18
- 239000006185 dispersion Substances 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- 239000011889 copper foil Substances 0.000 claims description 11
- 230000008018 melting Effects 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 11
- 238000005219 brazing Methods 0.000 claims description 8
- 238000005476 soldering Methods 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 238000005304 joining Methods 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- YCKOAAUKSGOOJH-UHFFFAOYSA-N copper silver Chemical compound [Cu].[Ag].[Ag] YCKOAAUKSGOOJH-UHFFFAOYSA-N 0.000 claims description 3
- 238000002490 spark plasma sintering Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000000654 additive Substances 0.000 claims 6
- 229910000881 Cu alloy Inorganic materials 0.000 abstract description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052845 zircon Inorganic materials 0.000 abstract 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 106
- 229910000679 solder Inorganic materials 0.000 description 25
- 239000011229 interlayer Substances 0.000 description 6
- 230000000873 masking effect Effects 0.000 description 4
- 229910052714 tellurium Inorganic materials 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- CODBZFJPKJDNDT-UHFFFAOYSA-N 2-[[5-[3-(dimethylamino)propyl]-2-methylpyridin-3-yl]amino]-9-(trifluoromethyl)-5,7-dihydropyrimido[5,4-d][1]benzazepine-6-thione Chemical compound CN(C)CCCC1=CN=C(C)C(NC=2N=C3C4=CC=C(C=C4NC(=S)CC3=CN=2)C(F)(F)F)=C1 CODBZFJPKJDNDT-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- KSQVGVMZECCPAT-AEFFLSMTSA-N [(1R)-4-phenyl-1-[[(2R)-2-(pyrazine-2-carbonylamino)pentanoyl]amino]butyl]boronic acid Chemical compound B([C@H](CCCC1=CC=CC=C1)NC(=O)[C@@H](CCC)NC(=O)C2=NC=CN=C2)(O)O KSQVGVMZECCPAT-AEFFLSMTSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Products (AREA)
Abstract
Description
Die Erfindung bezieht sich auf ein Verfahren gemäß Oberbegriff Patentanspruch 1 sowie auf ein Peltier-Modul gemäß Oberbegriff Patentanspruch 22.The The invention relates to a method according to the preamble of the patent claim 1 and on a Peltier module according to the preamble of claim 22nd
Die Herstellung von Peltier-Modulen nach dem bisher üblichen Verfahren ist aufwendig. Weiterhin weisen derartige Peltier-Module keine optimalen thermischen Eigenschaften auf.The Production of Peltier modules according to the previously customary process is complicated. Furthermore, such Peltier modules have no optimal thermal Properties on.
Bekannt ist es, die zum Herstellen von Leiterbahnen, Anschlüssen usw. benötigte Metallisierung auf einer Keramik, z.B. auf einer Aluminium-Oxid-Keramik mit Hilfe des sogenannten „DCB-Verfahrens" (Direct-Copper-Bond-Technology) herzustellen, und zwar unter Verwendung von die Metallisierung bildenden Metall- bzw. Kupferfolien oder Metall- bzw. Kupferblechen, die an ihren Oberflächenseiten eine Schicht oder einen Überzug (Aufschmelzschicht) aus einer chemischen Verbindung aus dem Metall und einem reaktiven Gas, bevorzugt Sauerstoff aufweisen. Bei diesem beispielsweise in der US-PS 37 44 120 oder in der DE-PS 23 19 854 beschriebenen Verfahren bildet diese Schicht oder dieser Überzug (Aufschmelzschicht) ein Eutektikum mit einer Schmelztemperatur unter der Schmelztemperatur des Metalls (z.B. Kupfers), so dass durch Auflegen der Folie auf die Keramik und durch Erhitzen sämtlicher Schichten diese miteinander verbunden werden können, und zwar durch Aufschmelzen des Metalls bzw. Kupfers im wesentlichen nur im Bereich der Aufschmelzschicht bzw. Oxidschicht.Known is it that for making tracks, connections, etc. needed Metallization on a ceramic, e.g. on an aluminum oxide ceramic using the so-called "DCB process" (direct copper bond technology) to produce using metallization forming Metal or copper foils or metal or copper sheets, the their surface sides a layer or a coating (Melting layer) of a chemical compound of the metal and a reactive gas, preferably oxygen. In this For example, in US-PS 37 44 120 or in DE-PS 23 19 854 described method forms this layer or coating (melting layer) a eutectic with a melting temperature below the melting temperature of the metal (e.g., copper), so that by laying the film on the Ceramics and by heating all Layers of these can be joined together, by melting of the metal or copper substantially only in the region of the melting layer or oxide layer.
Dieses DCB-Verfahren weist dann z.B. folgende Verfahrensschritte auf:
- • Oxidieren einer Kupferfolie derart, dass sich eine gleichmäßige Kupferoxidschicht ergibt;
- • Auflegen des Kupferfolie auf die Keramikschicht;
- • Erhitzen des Verbundes auf eine Prozesstemperatur zwischen etwa 1025 bis 1083°C, z.B. auf ca. 1071°C;
- • Abkühlen auf Raumtemperatur.
- • Oxidizing a copper foil so that a uniform copper oxide layer results;
- • placing the copper foil on the ceramic layer;
- • Heating the composite to a process temperature between about 1025 to 1083 ° C, for example to about 1071 ° C;
- • Cool to room temperature.
Bekannt
ist weiterhin das sogenannte Aktivlot-Verfahren (
Aufgabe der Erfindung ist es, ein Verfahren aufzuzeigen, mit dem eine vereinfachte Herstellung von Peltier-Modulen möglich ist. Zur Lösung dieser Aufgabe ist ein Verfahren entsprechend dem Patentanspruch 1 ausgebildet. Ein Peltier-Modul ist Gegenstand des Patentanspruches 22.task The invention is to provide a method with which a simplified Production of Peltier modules is possible. To solve this task a method according to claim 1 is formed. A Peltier module is the subject of claim 22.
Bei der Erfindung erfolgt die Verbindung zumindest eines Teils der Peltier-Elemente zumindest an einer Anschlussseite mit den Kontaktflächen der Substrate direkt, und zwar bevorzugt entsprechend einer generellen Ausführungsform der Erfindung durch Sinterbonden über wenigstens eine Sinterschicht oder entsprechend weiterer generellen Ausführungsform der Erfindung dadurch, dass beim Herstellen des jeweiligen Peltier-Elementes beispielsweise durch Sintern dieses Element auf die Kontaktfläche des Substrats aufgesintert wird. In beiden Fällen erfolgt die Verbindung des betreffenden Peltier-Elementes mit der Kontaktfläche durch Sintern oder Sinterbonden, und zwar beispielsweise direkt auf dem die Kontaktfläche bildenden Metallbereich (Metallschicht oder Kupferschicht) oder unter Verwendung wenigstens einer Zwischenschicht zwischen dem Metallbereich und dem jeweiligen Peltier-Element.at The invention provides the connection of at least part of the Peltier elements at least on one connection side with the contact surfaces of the substrates directly, and preferably according to a general embodiment the invention by sinter bonding over at least one sintered layer or according to further general embodiment of the invention by that when producing the respective Peltier element, for example sintered by sintering this element on the contact surface of the substrate becomes. In both cases the connection of the relevant Peltier element with the contact area by sintering or sinter bonding, for example directly on the contact surface forming metal region (metal layer or copper layer) or using at least one intermediate layer between the metal region and the respective Peltier element.
Ein Vorteil der Erfindung liegt zum einen in einer wesentlich vereinfachten Fertigung der Peltier-Module, zum anderen aber auch darin, dass die Wärmeleitfähigkeit des Übergangs zwischen dem Peltier-Elementen und den Substraten zumindest an den direkten Verbindungen bzw. an den die Sinterschicht als Verbindungsschicht aufweisenden Verbindungen wesentlich erhöht wird und dadurch die thermischen Eigenschaften bzw. Wirkung des jeweiligen Peltier-Moduls wesentlich verbessert werden.One Advantage of the invention is on the one hand in a much simplified Production of the Peltier modules, on the other hand also in that the thermal conductivity of the transition between the Peltier elements and the substrates at least to the direct connections or to the sintered layer as a connecting layer having significantly increased compounds and thereby the thermal Properties or effect of the respective Peltier module essential be improved.
Weiterbildungen der Erfindung sind Gegenstand der Unteransprüche. Die Erfindung wird im Folgenden anhand der Figuren an Ausführungsbeispielen näher erläutert. Es zeigen:further developments The invention are the subject of the dependent claims. The invention is in Explained below with reference to the figures of exemplary embodiments. It demonstrate:
Die
Zwischen
den Kontaktflächen
Die
Die
Die
Die
Die
Kontaktflächen
Die
Die
Zusätzlich kann das Sintermaterial auch noch weitere Bestandteile enthalten, insbesondere solche, die die Sinterfähigkeit erhöhen und/oder die Sintertemperatur reduzieren. Ein derartiger Bestandteil ist z.B. Zinn.In addition, can the sintered material also contain other constituents, in particular those the sinterability increase and / or reduce the sintering temperature. Such a component is e.g. Tin.
Die
Sinterschicht
Die
Die
Die
Die
Die
Die
Die
Während bei
den Ausführungsformen
der
Mehr
im Detail erfolgt die Herstellung der Peltier-Module
Das
Aufbringen der Zwischenschichten
Die
Herstellung der Keramiksubstrate erfolgt bei Ausführungen
der
Das
Aufbringen der einzelnen Zwischenschichten, z.B. der Zwischenschichten
Bei
der Ausführung
der
Das
Fügen der
an den Füge-
oder Verbindungsflächen
bzw. Anschlussseiten ohne Zwischenschicht oder aber mit einer oder
mehreren Zwischenschichten versehenen Peltier-Elemente
Die
Sintertemperatur liegt dabei unter der Schmelztemperatur des Materials
der Peltier-Elemente
Vorstehend
wurde in Zusammenhang mit den
Die
Die Öffnungen
Auch
bei diesem Verfahren sind die Kontaktflächen
Bei
Anwendung einer speziellen Maskierungs- und Fülltechnik ist es auch möglich, auf
den Kontaktflächen
Speziell
für das
Sinterbonden, d.h. bei Verbindungen, die die Verbindungen
Die Erfindung wurde voranstehend an verschiedenen Ausführungsbeispielen beschrieben. Es versteht sich, dass zahlreiche Änderungen sowie Abwandlungen möglich sind, ohne dass dadurch der der Erfindung zugrunde liegende Erfindungsgedanke verlassen wird.The The invention has been described above in various embodiments described. It is understood that numerous changes as well as modifications possible are, without thereby leaving the inventive idea underlying the invention becomes.
- 11
- Peltier-ModulPeltier module
- 22
- Keramik-SubstratCeramic substrate
- 33
- Kontaktflächecontact area
- 44
- Peltier-Element oder -chipPeltier element or chip
- 5, 65, 6
- elektrischer Anschluss des Peltier-Modulselectrical Connection of the Peltier module
- 77
- Metallisierungmetallization
- 88th
- WeichlotschichtSoft solder layer
- 99
- Metallbereich (Metall- oder Kupferpad)metal sector (Metal or copper pad)
- 1010
- WeichlotschichtSoft solder layer
- 1111
- Nickelschichtnickel layer
- 12, 12a–12i12 12a-12i
-
Verbindung
zwischen Peltier-Element
4 und Kontaktfläche3 bzw. Metallpad der Kontaktfläche3 Connection between Peltier element4 and contact area3 or metal pad of the contact surface3 - 1313
- Zwischenschicht aus Nickelinterlayer made of nickel
- 1414
- Zwischenschicht aus Silber und/oder Goldinterlayer made of silver and / or gold
- 1515
- Sinterschichtsintered layer
- 1616
- Nickelschichtnickel layer
- 1717
- Zwischenschicht aus Selber und/oder Goldinterlayer from self and / or gold
- 1818
- AktivlotschichtActive solder layer
- 1919
- WeichlotschichtSoft solder layer
- 20, 2120 21
- Zwischenschicht aus Nickel, Silber oder Goldinterlayer made of nickel, silver or gold
- 2222
- Maskemask
- 2323
- Öffnungopening
- 2424
- Einzelstempel eines Stempelwerkzeugssingle punch a stamping tool
- 2525
- Metall- oder KupferschichtMetal- or copper layer
Claims (31)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006011743A DE102006011743A1 (en) | 2006-03-13 | 2006-03-13 | Peltier module manufacture method involves connecting Peltier components or chips to contact areas on ceramic substrates by means of terminal surfaces during production process, in which contact areas have metallic or sinter layers |
RU2008138883/28A RU2433506C2 (en) | 2006-03-01 | 2007-02-20 | Method for peltier module fabrication, and also peltier module |
JP2008556650A JP4969589B2 (en) | 2006-03-01 | 2007-02-20 | Peltier element purification process and Peltier element |
EP07721954.1A EP1989741B1 (en) | 2006-03-01 | 2007-02-20 | Method for the production of peltier modules |
US12/224,362 US8481842B2 (en) | 2006-03-01 | 2007-02-20 | Process for producing Peltier modules, and Peltier module |
CN2013102837069A CN103354271A (en) | 2006-03-01 | 2007-02-20 | Peltier module manufacture method and peltier module |
PCT/DE2007/000342 WO2007098736A2 (en) | 2006-03-01 | 2007-02-20 | Method for the production of peltier modules, and peltier module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006011743A DE102006011743A1 (en) | 2006-03-13 | 2006-03-13 | Peltier module manufacture method involves connecting Peltier components or chips to contact areas on ceramic substrates by means of terminal surfaces during production process, in which contact areas have metallic or sinter layers |
Publications (2)
Publication Number | Publication Date |
---|---|
DE102006011743A1 true DE102006011743A1 (en) | 2007-09-20 |
DE102006011743A8 DE102006011743A8 (en) | 2008-01-03 |
Family
ID=38374768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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DE102006011743A Ceased DE102006011743A1 (en) | 2006-03-01 | 2006-03-13 | Peltier module manufacture method involves connecting Peltier components or chips to contact areas on ceramic substrates by means of terminal surfaces during production process, in which contact areas have metallic or sinter layers |
Country Status (1)
Country | Link |
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DE (1) | DE102006011743A1 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009046099A1 (en) * | 2009-10-28 | 2011-05-05 | Robert Bosch Gmbh | Method for producing a sea shelf module and corresponding sea shelf module |
DE102009046102A1 (en) * | 2009-10-28 | 2011-05-05 | Robert Bosch Gmbh | Method of manufacturing a seabed leg module |
DE102011010642A1 (en) * | 2011-02-09 | 2012-08-09 | Emitec Gesellschaft Für Emissionstechnologie Mbh | Coated thermoelectric element and a method for its production |
DE102012102090A1 (en) * | 2012-01-31 | 2013-08-01 | Curamik Electronics Gmbh | Thermoelectric generator module, metal-ceramic substrate and method for producing a metal-ceramic substrate |
WO2014019900A1 (en) * | 2012-08-02 | 2014-02-06 | Valeo Systemes Thermiques | Method for manufacturing a thermo-electric module, in particular intended to generate an electrical current in a motor vehicle, and a thermo-electric module obtained by said method |
DE102014203176A1 (en) * | 2014-02-21 | 2015-09-10 | MAHLE Behr GmbH & Co. KG | Thermoelectric device, in particular thermoelectric generator or heat pump |
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DE19527867A1 (en) * | 1995-07-29 | 1997-01-30 | Schulz Harder Juergen | Metal substrate for electrical and/or electronic semiconductor circuit - has Peltier chip connected between respective overlapping metallisation structures of upper and lower ceramic layer |
US5929351A (en) * | 1997-04-23 | 1999-07-27 | Matsushita Electric Industrial Co., Ltd. | Co-Sb based thermoelectric material and a method of producing the same |
US6127619A (en) * | 1998-06-08 | 2000-10-03 | Ormet Corporation | Process for producing high performance thermoelectric modules |
US20020024154A1 (en) * | 2000-07-03 | 2002-02-28 | Reiko Hara | Thermoelectric module |
DE102005030591A1 (en) * | 2004-07-07 | 2006-01-26 | National Institute Of Advanced Industrial Science And Technology | Thermoelectric element and thermoelectric module |
-
2006
- 2006-03-13 DE DE102006011743A patent/DE102006011743A1/en not_active Ceased
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DE19527867A1 (en) * | 1995-07-29 | 1997-01-30 | Schulz Harder Juergen | Metal substrate for electrical and/or electronic semiconductor circuit - has Peltier chip connected between respective overlapping metallisation structures of upper and lower ceramic layer |
US5929351A (en) * | 1997-04-23 | 1999-07-27 | Matsushita Electric Industrial Co., Ltd. | Co-Sb based thermoelectric material and a method of producing the same |
US6127619A (en) * | 1998-06-08 | 2000-10-03 | Ormet Corporation | Process for producing high performance thermoelectric modules |
US20020024154A1 (en) * | 2000-07-03 | 2002-02-28 | Reiko Hara | Thermoelectric module |
DE102005030591A1 (en) * | 2004-07-07 | 2006-01-26 | National Institute Of Advanced Industrial Science And Technology | Thermoelectric element and thermoelectric module |
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