JP2016008240A - Powdery particulate resin composition for compression molding and resin sealing type semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a powdery particulate resin composition for compression molding which is suitable for a compression molding method, is excellent in adhesiveness to a semiconductor element and is a sealing material having good moldability, and to provide a resin sealing type semiconductor device using the same.SOLUTION: There are provided a powdery particulate resin composition for compression molding which is a resin composition for sealing comprising (A) an epoxy resin, (B) a phenol curing agent, (C) a curing accelerator, (D) spherical silica and (E) a coumarone-based resin as essential components, wherein the (C) curing accelerator contains (c1) an imidazole-based curing accelerator and (c2) a phosphorus-based curing accelerator and 75 to 95 mass% of the (D) spherical silica is contained based on the total amount of the resin composition; and a resin sealing type semiconductor device obtained by sealing a semiconductor element using the resin composition.

Description

  The present invention relates to a powdery resin composition for compression molding used as a sealing material for electronic components such as semiconductor elements, and a resin-encapsulated semiconductor device using the same.

As a sealing material in semiconductor devices such as transistors, ICs, LSIs, etc., there is a resin composition based on an epoxy resin, in which a curing agent, a curing accelerator, an inorganic filler such as silica powder, and a coloring agent are blended. Widely used.
Conventionally, transfer molding is generally used as a sealing process using such a sealing material. However, recently, a compression molding method has been attracting attention as a method useful for assembling a thin sealing wire on a semiconductor element or forming a long and thin bonding wire.
In other words, with the recent trend toward high-density mounting of electronic components on printed wiring boards, the mainstream of semiconductor devices has shifted from pin insertion type packages to surface mounting type packages, and surface mounting type packages have also become thinner. Downsizing and downsizing. In the surface mount type package that has been reduced in thickness and size, the occupied volume of the semiconductor element relative to the package has increased, and the thickness of the coating covering the semiconductor element has been reduced. In addition, with the increase in the functionality and capacity of semiconductor elements, the chip area and the number of pins have increased, and further, the increase in the number of electrode pads has led to a reduction in pad pitch and pad size, so-called narrow pad pitch. Progressing.

  -On the other hand, the substrate on which the semiconductor element is mounted cannot be made as narrow as the electrode pads as much as the semiconductor element, so the number of terminals can be increased by increasing the wire length of the bonding wire drawn from the semiconductor device or by making the wire thinner. It corresponds to. However, if the wire becomes thin, the wire is likely to be flowed by the injection pressure of the resin in the subsequent resin sealing step. This tendency is particularly remarkable in the side gate type transfer molding.

  Therefore, a compression molding method has been used as a sealing process instead of the transfer molding method (see, for example, Patent Document 1). In this method, an object to be sealed (for example, a substrate on which a semiconductor element is mounted) is adsorbed to the upper mold, while powder resin (sealing material) is supplied to the lower mold so as to oppose it. While raising the mold, the object to be sealed and the sealing material are pressurized and sealed. According to the compression molding method, since the molten granular resin flows in a direction substantially parallel to the main surface of the object to be sealed, the amount of flow can be reduced, and the object to be sealed by the flow of the resin (for example, It can be expected to reduce deformation and breakage of wires, wirings, and the like on a substrate on which a semiconductor element is mounted.

As a sealing material suitable for such a compression molding method, for example, an epoxy resin, a curing agent, a curing accelerator, an inorganic filler and the like are included, and a particle size of 100 μm to 3 mm is 85% by mass or more. A granular resin composition having a distribution has been proposed (see, for example, Patent Document 2).
However, in the surface mount type package that has been reduced in thickness and size, the occupied volume of the semiconductor element in the package has increased, and the thickness of the sealing material that covers the semiconductor element has become increasingly thinner. There has been a demand for improvement in adhesive strength with materials.
Conventionally, a buffer coating for forming a passivation film with a polyimide resin has been performed on the surface of a semiconductor element in order to relieve stress. However, the omission of the passivation film has been studied for the purpose of cost reduction.
However, if the passivation film is omitted, the adhesion between the sealing material and silicon nitride which is a protective layer of the semiconductor element is lowered, and there is a possibility that peeling occurs during reflow. Therefore, a sealing resin composition that is a sealing material excellent in adhesiveness with silicon nitride has been demanded.
For example, it has been proposed to improve adhesion to a semiconductor element using a coumarone-based resin (see, for example, Patent Documents 3 to 5).
However, even if a coumarone resin is used, if other conditions are not satisfied, voids are generated inside and outside of the molded body, that is, the moldability is poor and the adhesive force may not be sufficient, and further improvement is required. .

JP 2008-279599 A JP 2011-153173 A JP-A-10-279638 JP 2000-198817 A JP 2001-40179 A

  The present invention has been made to solve the above-mentioned problems of the prior art, is suitable for compression molding, has excellent adhesion to electronic parts such as semiconductor elements, has a low wire flow rate, and is resistant to reflow. An object of the present invention is to provide a powder resin composition for compression molding, which is an excellent sealing material with good moldability, and a resin-encapsulated semiconductor device using the resin composition.

That is, the present invention
(1) A sealing resin composition containing (A) an epoxy resin, (B) a phenol curing agent, (C) a curing accelerator, (D) spherical silica, and (E) a coumarone-based resin as essential components. The (C) curing accelerator contains (c1) an imidazole curing accelerator and (c2) a phosphorus curing accelerator, and (D) spherical silica is 75 to 95 mass based on the total amount of the resin composition. %, A granular resin composition for compression molding,
(2) The granular resin composition for compression molding as described in (1) above, which contains 1 to 10 parts by mass of the (E) coumarone-based resin with respect to 100 parts by mass of the (A) epoxy resin.
(3) The above (1) or (1) or (1) or (1) in which the mixing ratio (c1) / (c2) of the (c1) imidazole curing accelerator and (c2) phosphorus curing accelerator is 1/5 to 1/1 by mass ratio. 2) a granular resin composition for compression molding according to 2),
(4) The powdered resin composition for compression molding according to any one of (1) to (3) above, wherein the softening point of the (E) coumarone-based resin is 90 to 140 ° C., and (5) the above ( A resin-encapsulated semiconductor device obtained by encapsulating a semiconductor element using the granular resin composition for compression molding according to any one of 1) to (4).

  ADVANTAGE OF THE INVENTION According to this invention, while showing high adhesive force with respect to electronic components, such as a semiconductor element, the wire flow rate is small, it is excellent in reflow resistance, and it is a sealing material with good moldability. A composition is obtained.

Hereinafter, the present invention will be described in detail.
In the present invention, the epoxy resin of component (A) is a monomer, oligomer, or polymer in general having two or more epoxy groups in one molecule, and its molecular weight and molecular structure are not particularly limited. Type epoxy resins, bisphenol type epoxy resins, stilbene type epoxy resins and other crystalline epoxy resins; phenol novolac type epoxy resins, cresol novolac type epoxy resins and other novolak type epoxy resins; triphenolmethane type epoxy resins, alkyl-modified triphenolmethane Polyfunctional epoxy resins such as epoxy resins; aralkyl epoxy resins such as phenol aralkyl epoxy resins having a phenylene skeleton and phenol aralkyl epoxy resins having a biphenylene skeleton; dihydroxynaphthalene epoxy Resin, naphthol type epoxy resin such as epoxy resin obtained by glycidyl etherification of dihydroxynaphthalene dimer; triazine nucleus-containing epoxy resin such as triglycidyl isocyanurate, monoallyl diglycidyl isocyanurate; dicyclopentadiene modified phenol type epoxy Examples include bridged cyclic hydrocarbon compound-modified phenol type epoxy resins such as resins, and these may be used alone or in combination of two or more.

In the present invention, the phenol curing agent of component (B) is not particularly limited as long as it is a phenol compound having two or more phenolic hydroxyl groups in one molecule generally used as a curing agent for epoxy resins. . Specifically, compounds having two phenolic hydroxyl groups in one molecule such as resorcin, catechol, bisphenol A, bisphenol F, substituted or unsubstituted biphenol, phenol, cresol, xylenol, resorcin, catechol, bisphenol A, Under acidic catalysis of phenols such as bisphenol F, phenylphenol, aminophenol and / or naphthols such as α-naphthol, β-naphthol, dihydroxynaphthalene and aldehydes such as formaldehyde, acetaldehyde, propionaldehyde, benzaldehyde, salicylaldehyde At least one selected from a novolak-type phenolic resin, phenols and naphthols obtained by condensation or co-condensation with dimethoxyparaxylene or bis (methoxyme From at least one selected from aralkyl-type phenol resins synthesized from (til) biphenyl, aralkyl-type phenol resins such as naphthol aralkyl resins, paraxylylene and metaxylylene-modified phenol resins, melamine-modified phenol resins, terpene-modified phenol resins, phenols and naphthols Dicyclopentadiene type phenol resin, dicyclopentadiene type naphthol resin, cyclopentadiene modified phenol resin, polycyclic aromatic ring modified phenol resin, biphenyl type phenol resin synthesized by copolymerization from at least one selected from dicyclopentadiene; Examples thereof include triphenylmethane type phenol resins and phenol resins obtained by copolymerizing two or more of these resins. These may be used alone or in combination of two or more.
Component (B) is blended in an equivalent ratio of 0.5 to 1.5 with respect to the epoxy resin of component (A).

In the present invention, the curing accelerator of component (C) needs to contain both the imidazole curing accelerator of component (c1) and the phosphorus curing accelerator of component (c2).
If the component (C) curing accelerator is only the imidazole curing accelerator of the component (c1), the adhesive force is not sufficient, and there is a possibility that peeling occurs at the interface between the semiconductor element and the sealing resin during reflow, Only the phosphorus-based curing accelerator of component (c2) is not preferable because it is inferior in curability and may cause voids due to swelling inside and on the surface of the cured resin after molding.

  The mixing ratio (c1) / (c2) of the imidazole curing accelerator of the component (c1) and the phosphorus curing accelerator of the component (c2) is preferably 1/5 to 1/1. 1/3 to 1/1 is more preferable. If the blending ratio is large relative to the above range, the imidazole curing accelerator of the component (c1) is large, there is a risk that peeling will occur at the interface between the semiconductor element and the sealing resin when the reflow is not sufficient, If the amount of the phosphorus-based curing accelerator of component (c2) is large, it is not preferable because the curability is poor and voids due to swelling may occur in the resin cured product and on the surface after molding.

  Furthermore, the compounding amount of the curing accelerator of component (C) is usually 0.2 to 5.0 with respect to 100 parts by mass of the total amount of the epoxy resin of component (A) and the phenol curing agent of component (B). It is selected in the range of about part by mass, preferably 0.5 to 2.0 parts by mass.

Examples of the imidazole curing accelerator of the component (c1) include 2-heptadecylimidazolazol, 2-methylimidazole, 2-ethylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 4-methylimidazole. 4-ethylimidazole, 2-phenyl-4-hydroxymethylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-methylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2- And phenyl-4,5-dihydroxymethylimidazole.
Of these, 2-phenyl-4-methyl-5-hydroxymethylimidazole (2P4MHZ) and 2-heptadecylimidazole (C17Z-T) are preferably used because of their good curability.

Examples of the phosphorus-based curing accelerator for the component (c2) include triphenylphosphine, tributylphosphine, tri (p-tolyl) phosphine, tri (p-methoxyphenyl) phosphine, tri (p-ethoxyphenyl) phosphine, and triphenylphosphine. -Triorganophosphines such as triphenylborate, tetraphenylphosphonium and tetraphenylborate, and quaternary phosphonium salts.
Among these, tri (p-tolyl) phosphine (TPTP) is preferably used because it has good reflow resistance due to low elasticity.
In addition, hardening accelerators other than said (c1) and (c2) can be added to the granular resin composition for compression molding of this invention. Curing accelerators other than (c1) and (c2) include tertiary amine compounds such as benzyldimethylamine, phenol salts and phenol novolac salts of 1,8-diazabicyclo [5.4.0] undecene-7, carbonic acid Derivatives such as salts can be mentioned. The addition amount of the curing accelerator other than (c1) and (c2) is preferably 100 parts by mass or less with respect to 100 parts by mass of (c1) and (c2).

  In the present invention, the proportion of the component (D) spherical silica is required to be 75% by mass to 95% by mass based on the total amount of the resin composition, and preferably 82% by mass to 91% by mass. By setting the blending ratio of the spherical silica to 75% by mass or more of the entire resin composition, it is possible to prevent the linear expansion coefficient from increasing and the dimensional accuracy, temperature resistance, mechanical strength, etc. of the molded product from being lowered. On the contrary, by setting it as 95 mass% or less, it prevents that melt viscosity increases and fluidity | liquidity falls, or a moldability falls and it becomes difficult to use practically.

The average particle size of the spherical silica of the component (D) is preferably 5 μm to 30 μm. By setting the average particle size to 5 μm or more, the fluidity is lowered and the moldability is prevented from being impaired. Moreover, it becomes easy to foam by making an average particle diameter 30 micrometers or less.
The spherical silica may be mixed with fused silica powder.
The blending ratio of the fused silica powder to 100 parts by mass of the spherical silica of component (D) is preferably 80 to 100 parts by mass, and more preferably 90 to 100 parts by mass.
By setting it as 80 mass% or more, it prevents that a curvature-proof characteristic falls. In addition to the fused silica powder, crystalline silica and fine synthetic silica can be blended.
By blending an appropriate amount of fine synthetic silica, fluidity and moldability are improved.

  In the present invention, examples of the coumarone resin of component (E) include resins having a skeleton represented by the following general formula (1).

（１）

(1)

In the above formula, u is 0 or an integer of 1 or more, v is 0 or an integer of 1 or more, and w is 0 or an integer of 1 or more. However, u and v are not 0 at the same time. Examples of such coumarone resins include knit resin coumarone G-90 (softening point 90 ° C.), knit resin coumarone G-100N (softening point 100 ° C.), and knit resin coumarone V-120 (softening point 120 ° C.). [Nippon Chemical Co., Ltd.].
In this invention, it is preferable to contain 1-10 mass parts with respect to 100 mass parts of epoxy resins of a component (A), and it is more preferable that it is 1-7 mass parts. It is more preferable that it is 2-6 mass parts, and it is especially preferable that it is 2-5 mass parts.
If the content of the coumarone resin of component (E) is less than 1 part by mass, sufficient adhesive strength cannot be obtained, and peeling may occur at the interface between the semiconductor element and the sealing resin during reflow. If it is more than the range, the curability is hindered, and voids resulting from swelling in the cured resin cured product and on the surface are not preferable.

Furthermore, the softening point of the coumarone resin of the component (E) is preferably 90 to 140 ° C, and more preferably 100 to 140 ° C. By setting the softening point of the coumarone-based resin to 90 ° C. or higher, it is possible to prevent the coumarone-based resin from oozing out on the surface of the cured resin product after molding and causing appearance abnormality. By setting the softening point to 140 ° C. or lower, the dispersibility at the time of kneading becomes insufficient, and the coumarone-based resin that has not been dissolved is unevenly distributed in the resin composition, and is formed on the internal voids or the surface of the cured resin after molding. Prevents blister-like appearance abnormalities.
These are particularly prominent in compression molding methods in which the resin flow range is small during semiconductor encapsulation.

Moreover, in the granular resin composition for compression molding of the present invention, in addition to the above components, the component (D) other than the component (D) generally blended in this type of composition as long as the effects of the present invention are not impaired. Inorganic fillers (alumina, silicon nitride, aluminum nitride, etc.), coupling agents, synthetic waxes, natural waxes, higher fatty acids, release agents such as higher fatty acid acids, carbon black, cobalt blue, etc. Colorants, modifiers such as silicone oil and silicone rubber, and ion scavengers such as hydrotalcites can be blended.
As the coupling agent, an epoxy silane, amino silane, ureido silane, vinyl silane, alkyl silane, organic titanate, aluminum alcoholate, or the like is used. These can be used alone or in admixture of two or more. From the viewpoints of flame retardancy and curability, aminosilane-based coupling agents are preferred, and in particular, γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropylmethyldimethoxysilane, γ-amino. Propylmethyldiethoxysilane and the like are preferable.
The compounding amount of the above components is about 0.05 to 3% by mass, preferably about 0.1 to 1% by mass, in the granular resin composition for compression molding.
In preparing the powdered resin composition for compression molding of the present invention, the components (A) to (D) and various components to be blended as necessary are mixed thoroughly by a mixer or the like. Then, heat melting and mixing treatment is performed by a hot roll, a kneader or the like to prepare a resin composition. Next, the resin composition is solidified by cooling and pulverized to an appropriate size, and the pulverized product is classified through a sieve. Those containing 95% by mass or more of particles having a particle size of 0.2 mm to 3.0 mm are preferably used as the granular resin composition for compression molding of the present invention.

The pulverization method for preparing the granular resin composition for compression molding of the present invention is not particularly limited, and a general pulverizer can be used. A cutting mill, a ball mill, a cyclone mill, a hammer mill, a vibration mill, a cutter mill, and a grinder mill are preferable, and a speed mill is more preferable.
In the classification step, the pulverized product of the resin composition obtained by the above pulverization is sieved to obtain a particle aggregate having a predetermined particle size distribution by classification or air classification, that is, a granular resin composition for compression molding of the present invention. It is done.
When classified using a sieve of about 7 to 500 mesh, a granular resin composition for compression molding that can be applied well to the resin-encapsulated semiconductor device of the present invention is obtained.

Furthermore, in the granular resin composition for compression molding of the present invention, the degree of compression defined by the following formula is preferably 12% to 19%, and more preferably 13% to 18%.
Compressibility (%)
= [(Tap bulk density−initial bulk density) / tap bulk density] × 100
In the above formula, the tap bulk density and the initial bulk density are measured according to the definition of JIS R 1682.
When the degree of compression is in the range of 12% to 19%, the granular resin composition for compression molding of the present invention exhibits good melting properties, excellent moldability, and the wire flow rate during molding is reduced. Therefore, it is preferable.
The granular resin composition for compression molding of the present invention is particularly suitable for a semiconductor element having a surface treated with silicon nitride.

  Next, the present invention will be described in more detail with reference to examples. In addition, this invention is not limited to these Examples at all.

[Example 1]
NC-3000 [trade name, biphenyl type epoxy resin manufactured by Nippon Kayaku Co., Ltd .; epoxy equivalent 285, softening point 56 ° C.] 7.0 parts by mass as epoxy resin, MEHC-7800M [trade name, Meiwa] Phenol aralkyl resin manufactured by Kasei Co., Ltd .; 4.6 parts by mass of hydroxyl group equivalent 173, softening point 81 ° C., 2P4MHZ [trade name, 2-phenyl-4-hydroxy manufactured by Shikoku Kasei Co., Ltd.] Methyl-5-methylimidazole] 0.03 parts by mass, TPTP [trade name, tri (p-tolyl) phosphine made by Hokuko Chemical Co., Ltd.] 0.05 parts by mass as a phosphorus curing accelerator, FB- as spherical silica 105 [trade name, manufactured by Denki Kagaku Kogyo Co., Ltd .; average particle diameter 11 μm] 86.3 parts by mass, V-120 [trade name, Nisshinka] as coumarone-based resin Co., Ltd., softening point 120 ° C.] 0.3 parts by mass, 3-phenylaminopropyltrimethoxysilane [Toray Dow Corning Co., Ltd., trade name: Z-6883] 0.20 mass as a silane coupling agent Parts, and carbon black as a colorant [Mitsubishi Chemical Co., Ltd., trade name: MA-600] 0.25 parts by mass, flame retardant as FP-100 [trade name, manufactured by Fushimi Pharmaceutical Co., Ltd.] 0.20 Mass part, KW-2200 [trade name, hydrotalcite manufactured by Kyowa Chemical Industry Co., Ltd.] 0.30 part by mass was mixed at room temperature using a mixer, and then ripened and kneaded at 120 ° C. using a hot roll. . After cooling, the mixture was pulverized using a speed mill manufactured by Gohashi Seisakusho, and then passed through a sieve to obtain a granular resin composition for compression molding having a degree of compression of 14.4%.

[Example 2]
A granular resin composition for compression molding having a degree of compression of 15.7% was obtained in the same manner as in Example 1 except that V-120 was changed to 1.05 parts by mass.

Example 3
A granular resin composition for compression molding having a degree of compression of 14.7% was obtained in the same manner as in Example 1 except that 0.02 parts by mass of 2P4MHZ and 0.08 parts by mass of TPTP were mixed.

Example 4
Compressed in the same manner as in Example 1 except that C2Z-T [2-heptadecylimidazole manufactured by Shikoku Kasei Co., Ltd.] instead of 2P4MHZ was changed to 0.02 parts by mass, and TPTP was changed to 0.05 parts by mass. A granular resin composition for compression molding having a degree of 13.8% was obtained.

Example 5
Except for blending 0.15 parts by mass of L-20 (trade name, manufactured by Nikkiso Chemical Co., Ltd .; liquid at room temperature) as a liquid coumarone-based resin instead of the V-120, the same as in Example 1. A granular resin composition for compression molding having a degree of compression of 16.2% was obtained.

[Comparative Example 1]
A granular resin composition for compression molding having a compression degree of 15.3% was obtained in the same manner as in Example 1 except that the 2P4MHZ was not blended and the TPTP was blended in an amount of 0.10 parts by mass.

[Comparative Example 2]
A granular resin composition for compression molding having a degree of compression of 14.2% was obtained in the same manner as in Example 1 except that the TPTP was not blended and the 2P4MHZ was blended in an amount of 0.06 parts by mass.

[Comparative Example 3]
A granular resin composition for compression molding having a degree of compression of 13.9% was obtained in the same manner as in Example 1 except that V-120 was not blended.
About the granular resin composition for compression molding obtained by each said Example and each comparative example, various characteristics were measured by the method shown below. The measurement results are shown in Table 1 together with the composition and the like.

Measurement items and measurement method [Compression degree]
Using a powder tester manufactured by Hosokawa Micron Co., Ltd., the initial bulk density (average value of n = 10) and tap bulk density (average value of n = 10) were measured in accordance with JIS R1628. ). In addition, as a measurement container, a stainless steel (SUS304) volume: 100 cc bottomed cylindrical container was used. The tapping was performed under the conditions of a tap height of 20 mm, a tap speed of 60 times / minute, and a tap time of 3 minutes.

[Spiral flow]
In accordance with EMMI-I-65, the spiral flow was measured under conditions of a molding temperature of 175 ° C. and a molding pressure of 9.8 MPa for 150 seconds.
The spiral flow is preferably 175 or more.

[Formability]
20 mm x 20 mm x 1.05 mm FBGA (Fine pitch Ba11 Grid Array) is compressed using a granular resin composition for compression molding under conditions of a mold temperature of 175 ° C, a molding pressure of 10.0 MPa, and a curing time of 2 minutes. After molding, the appearance of the 20 molded products obtained was visually observed, the occurrence of voids was observed, and judged according to the following criteria.
Furthermore, the state of occurrence of internal and external voids in the molded product was observed with an ultrasonic flaw detector [manufactured by Hitachi Construction Machinery Finetech Co., Ltd., FS300II], and judged according to the following criteria.
○: Abnormal appearance or no generation of voids △: Generation of voids with a major axis of 0.5 mm or less ×: Generation of voids with a major axis exceeding 0.5 mm

[Adhesiveness with semiconductor elements]
A semiconductor element whose surface was treated with silicon nitride was prepared, and the resin composition was used so that the adhesion area with the element surface of this semiconductor element was 4 mm ² , a mold temperature of 175 ° C., a molding pressure of 10 MPa, and a curing time Q After compression molding for 3 minutes, post-curing was performed at 175 ° C. for 8 hours to produce a resin-encapsulated semiconductor device. Next, using a bond tester device (SS-30WD manufactured by Seishin Shoji Co., Ltd.), the force was applied at a speed of 0.5 mm / sec with a push-pull gauge from the horizontal direction of the semiconductor element at 260 ° C. Measurements were made and the adhesion to semiconductor elements was determined according to the following criteria.
○: Adhesive force is 1.5 MPa or more Δ: Adhesive force is 1.0 MPa or more and less than 1.5 MPa ×: Adhesive force is less than 1.0 MPa

[Wire flow rate]
20 mm × 20 mm × 1.05 mm FGBA was compression molded using a powder resin composition for compression molding under conditions of a mold temperature: 175 ° C., a molding pressure of 10 MPa, and a curing time of 3 minutes. The wire inside the FBGA in the product is observed with an X-ray observation device (made by Pony Industry Co., Ltd.), and the deformation rate of the maximum deformation part [maximum distance between the position of the wire before sealing and the position of the wire after sealing The ratio of the wire length to the wire length (%)] was determined and judged according to the following criteria.
○: Deformation rate is less than 1% △: Deformation rate is 1% or more and less than 3% ×: Deformation rate is 3% or more

[Reflow resistance]
The 20 resin-encapsulated semiconductor devices were absorbed in a thermostatic chamber at 30 ° C. and 60% RH for 192 hours, then ripened in an infrared reflow oven at 260 ° C., and after cooling, the presence or absence of peeling was exceeded. Observation with a sonic flaw detector and the number of peels [NG (cracks) number / 20] were counted to determine the reflow resistance.

Table 1 shows the following.
As shown in Comparative Example 1, even if the same amount of the coumarone-based resin of component (E) is added as in the examples, the moldability and wire flow rate are poor unless an imidazole-based curing accelerator is used as a curing accelerator. . As shown in Comparative Example 2, even when the same amount of the coumarone resin of component (E) is added as in the examples, the adhesive strength is low unless a phosphorus curing accelerator is used as a curing accelerator, and the reflow resistance is low. Is bad. As shown in Comparative Example 3, even if an imidazole curing accelerator and a phosphorus curing accelerator are used in combination as the curing accelerator, if the coumarone resin is not blended, the adhesive force and the wire flow rate are slightly low, and the reflow resistance The nature is bad.

  The powdered resin composition for compression molding of the present invention is suitably used in the field of sealing materials for electronic components such as semiconductor elements, and a resin-encapsulated semiconductor device using this resin composition has high reliability.

Claims (5)

  A sealing resin composition containing (A) an epoxy resin, (B) a phenol curing agent, (C) a curing accelerator, (D) spherical silica, and (E) a coumarone-based resin as essential components, (C) The curing accelerator contains (c1) an imidazole-based curing accelerator and (c2) a phosphorus-based curing accelerator, and (D) spherical silica is contained in an amount of 75 to 95% by mass based on the total amount of the resin composition. A granular resin composition for compression molding characterized by the above.   The granular resin composition for compression molding according to claim 1, comprising 1 to 10 parts by mass of the (E) coumarone-based resin with respect to 100 parts by mass of the (A) epoxy resin.   The compression ratio according to claim 1 or 2, wherein a mixing ratio (c1) / (c2) of the (c1) imidazole-based curing accelerator and (c2) phosphorus-based curing accelerator is 1/5 to 1/1. A granular resin composition for molding.   The granular resin composition for compression molding according to any one of claims 1 to 3, wherein the softening point of the (E) coumarone-based resin is 90 to 140 ° C.   A resin-encapsulated semiconductor device obtained by encapsulating a semiconductor element using the powdery resin composition for compression molding according to any one of claims 1 to 4.