JP2015530925A - Materials nanofabricated by femtosecond pulsed laser technology to increase surface area and thermal energy dissipation - Google Patents
Materials nanofabricated by femtosecond pulsed laser technology to increase surface area and thermal energy dissipation Download PDFInfo
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- 239000000463 material Substances 0.000 title description 7
- 230000021715 photosynthesis, light harvesting Effects 0.000 title description 2
- 238000012545 processing Methods 0.000 claims abstract description 32
- 239000002086 nanomaterial Substances 0.000 claims abstract description 3
- 230000005855 radiation Effects 0.000 claims abstract 3
- 239000011888 foil Substances 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 5
- 230000005670 electromagnetic radiation Effects 0.000 claims 2
- 230000017525 heat dissipation Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 12
- 229910001220 stainless steel Inorganic materials 0.000 description 8
- 239000010935 stainless steel Substances 0.000 description 8
- 238000001000 micrograph Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 230000010287 polarization Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 235000019692 hotdogs Nutrition 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 230000008542 thermal sensitivity Effects 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/16—Constructional details or arrangements
- G06F1/20—Cooling means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4878—Mechanical treatment, e.g. deforming
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F2255/00—Heat exchanger elements made of materials having special features or resulting from particular manufacturing processes
- F28F2255/20—Heat exchanger elements made of materials having special features or resulting from particular manufacturing processes with nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Human Computer Interaction (AREA)
- General Engineering & Computer Science (AREA)
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- Laser Beam Processing (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
本発明では、マイクロプロセッサ、ミニプロセッサ及びヒートシンクの表面は、熱の散逸を増加させるように、フェムト秒パルスレーザにより加工されてその表面積を増加させる。フェムト秒パルスレーザ加工により前記表面に形成、創出されたナノ構造により、赤外線放射により熱が放射される表面積が増加することを特徴としている。In the present invention, the surfaces of the microprocessor, miniprocessor and heat sink are processed with a femtosecond pulsed laser to increase their surface area so as to increase heat dissipation. The nanostructure formed and created on the surface by femtosecond pulse laser processing increases the surface area from which heat is radiated by infrared radiation.
Description
本発明は、電子機器の冷却が向上するように表面積を増大させるフェムト秒パルスレーザ技術の使用に関する。 The present invention relates to the use of femtosecond pulsed laser technology to increase the surface area for improved cooling of electronic equipment.
本発明は、例えばマイクロプロセッサ及びミニプロセッサを冷却する改善された熱伝達表面を提供することを目的としている。本発明により、事業機会は前途有望となる。本発明による新たな熱伝達表面は、電子・電気部品及び機器の会社にとって有用であると考える。 The present invention seeks to provide an improved heat transfer surface that cools, for example, microprocessors and miniprocessors. With the present invention, business opportunities are promising. The new heat transfer surface according to the present invention is considered useful for electronic and electrical component and equipment companies.
課題は、フェムト秒パルスレーザを用いることにより解決され、本発明は新たな仕事及び人と技術の統合並びに新たな機会を提供する。 The problem is solved by using a femtosecond pulsed laser, and the present invention provides new work and integration of people and technology and new opportunities.
フェムト秒パルスレーザにより増大させた表面積は、例えばマイクロプロセッサを１０００倍又はそれ以上の率で冷却を加速する。本発明は、部品の表面の加工、又はマイクロプロセッサ又は他の電子部品の表面に貼ったり剥がしたりする剥離シート上の箔の加工及び打抜きの工程において用いてもよい。電極を加工してスーパーキャパシタの容量を改善すること、ナノ加工によりバイオセンサの表面を増大させることにも用いられる。ナノ加工表面を宇宙に適用すると、見えない人工衛星ができる。 The surface area increased by the femtosecond pulse laser accelerates cooling, for example, at a rate 1000 times or more for the microprocessor. The present invention may be used in processing of the surface of a component, or processing and punching of a foil on a release sheet that is applied to or peeled off from the surface of a microprocessor or other electronic component. It can also be used to improve the capacity of supercapacitors by processing electrodes and to increase the surface of biosensors by nanoprocessing. When the nano-processed surface is applied to space, an invisible satellite is created.
フィラメントを加工すると表面積が増大し、放射率が１０００倍又はそれ以上に増大する。６０ワットの電球は、１００％以上のルーメンを生成する。フェムト秒パルスレーザ技術により、表面からの熱及び光の送出が速まる。本発明では、効率の良い表面を提供でき。より低温において、より大きな輝度の光が放射される。 Processing the filament increases the surface area and increases the emissivity by a factor of 1000 or more. A 60 watt bulb produces over 100% lumens. Femtosecond pulsed laser technology accelerates heat and light delivery from the surface. In the present invention, an efficient surface can be provided. At lower temperatures, light of greater brightness is emitted.
本発明により、アークを創生して持続させる、より表面積が大きく材料の使用量の少ない蛍光電極が提供される。 The present invention provides a fluorescent electrode that creates and sustains an arc and has a higher surface area and less material usage.
本発明を用いると、１平方インチの材料が、１０００平方インチの表面積を有することができる。表面を微小ナノの大きさに破壊すると面積が増大する。新たなフェムト秒パルスレーザ技術は、１０−１５秒（フェムト秒）レーザパルスを用いて、増大した表面積を生成する。マイクロプロセッサの大きさは、生成する熱により制限される。あらゆる場所及び状況おいて、エネルギーの有効利用が必要となっている。照明用の電球及び管は、より多くのルーメン出力、より大きな効率及びより長い寿命が要求される。熱エネルギーを良好に且つ迅速に送出するマイクロプロセッサは、より大きく且つ速い演算を可能とする。１０−１５秒パルスレーザ技術により、材料が彫刻されて波動エネルギーが放出される。フェムト秒パルスレーザは、彫刻により金属、箔及び樹脂に設定された深さ及び幅のナノ表面を形成して表面積を増大させる。 Using the present invention, a square inch material can have a surface area of 1000 square inches. When the surface is destroyed to the size of a small nano, the area increases. New femtosecond pulsed laser technology uses 10-15 second (femtosecond) laser pulses to produce increased surface area. The size of the microprocessor is limited by the heat it generates. Effective use of energy is required in all places and situations. Lighting bulbs and tubes are required to have more lumen output, greater efficiency and longer life. A microprocessor that delivers thermal energy well and quickly allows for larger and faster computations. With 10-15 second pulsed laser technology, the material is engraved and wave energy is released. The femtosecond pulsed laser increases the surface area by engraving to form nanosurfaces of depth and width set in metal, foil and resin.
本発明により、エレクトロニクスにおいて熱及びエネルギーを管理できる新たなナノ表面が創出される。フェムト秒レーザ技術を用いて、ナノ加工された金属及び非金属材料が創出される。フェムト秒レーザ技術により形成されたナノ表面は、熱及びエネルギー管理の改善にも適用される。 The present invention creates new nanosurfaces that can manage heat and energy in electronics. Using femtosecond laser technology, nanofabricated metallic and non-metallic materials are created. Nanosurfaces formed by femtosecond laser technology are also applied to improve thermal and energy management.
赤外線及び波動エネルギーの熱損失は次の様に表わされる。
放射されるエネルギー：Ｐ＝ｃ・ａ・Ａ・Ｔ４
The heat loss of infrared and wave energy is expressed as follows.
Radiated energy: P = c · a · A · T 4
この式において、ｃ＝放射率、ａ＝普遍定数、Ａ＝面積、Ｔ＝ケルビン温度（２７３Ｋ＝０℃）である。放射率は、ｃ＝１の完全放射体及び吸収体である黒体の放射されるエネルギーに関連する。面積が増加すると放射されるエネルギーも増加する。温度に関しては４乗となるので、温度が少し上昇しても放射されるエネルギーは大きく増加する。 In this equation, c = emissivity, a = universal constant, A = area, T = Kelvin temperature (273 K = 0 ° C.). The emissivity is related to the emitted energy of a c = 1 perfect radiator and an absorber black body. As the area increases, the emitted energy also increases. Since the temperature is the fourth power, the radiated energy greatly increases even if the temperature rises a little.
新たなフェムト秒レーザ機能により、顧客の材料及び応用に適ったナノ表面を提供できる。最近は、幾つかの用途への応用が開発されている。 New femtosecond laser capability can provide a nano-surface suitable for customer materials and applications. Recently, applications for several uses have been developed.
マイクロプロセッサでは、エネルギーの散逸を改善してより良好な熱管理を実現している。 Microprocessors improve energy dissipation and achieve better thermal management.
上記を含む明細書の記載、請求の範囲、図面により、上記の目的に加えて他の目的及び特徴は明らかにする。 In addition to the above objects, other objects and features will become apparent from the description of the specification including the above, the claims, and the drawings.
図１には、フェムト秒レーザ加工によりステンレススチール上に形成したナノ表面を示す。走査型電子顕微鏡像は、フェムト秒レーザ加工により形成されたナノ構造を示している。右側の像は、１０ｍｍ以下の脚を有する「ナノ人間」を示す。 FIG. 1 shows a nanosurface formed on stainless steel by femtosecond laser processing. The scanning electron microscope image shows a nanostructure formed by femtosecond laser processing. The image on the right shows “nano-humans” with legs of 10 mm or less.
図２には、レーザ加工前後のステンレススチールの走査型電子顕微鏡像を示す。左側の像は加工前であり、右側の像はフェムト秒レーザ加工後の像である。右側の像に置ける微小構造の不明瞭な外観は、レーザ加工により形成されたナノ表面構造によるものである。 FIG. 2 shows scanning electron microscope images of stainless steel before and after laser processing. The image on the left is before processing, and the image on the right is an image after femtosecond laser processing. The unclear appearance of the microstructure in the right image is due to the nano-surface structure formed by laser processing.
図３には、中心にフェムト秒レーザ加工された方形を有するステンレススチール板を示す。２平方インチの板の内。１平方インチが加工された（暗い部分）。出来る限り黒色の表面を得るため、１つの条件（試料と焦光レンズの間の距離）のみを最適化した。 FIG. 3 shows a stainless steel plate having a square femtosecond laser machined in the center. Within a 2 square inch plate. One square inch was processed (dark area). In order to obtain as black a surface as possible, only one condition (distance between the sample and the focal lens) was optimized.
図３Ａには、フェムト秒パルスレーザ加工よるサブミクロン以下の凹凸３を有する迅速な熱散逸表面を備えた電子部品１、ハウジング２及び箔４を示す。 FIG. 3A shows an electronic component 1, housing 2 and foil 4 with a rapid heat dissipation surface having sub-micron irregularities 3 from femtosecond pulsed laser processing.
図４には、電磁波スペクトル７の周波数目盛を示す。全ての物体は温度に応じて異なった波長の光を放射する。室温において、物体は赤外線を放射する。電磁波スペクトルにおいて、赤外線の波長は、１μｍから１０００μｍである。物体の温度が華氏１１１２度（６００℃）に近付くと赤く輝き始める。 In FIG. 4, the frequency scale of the electromagnetic wave spectrum 7 is shown. All objects emit different wavelengths of light depending on the temperature. At room temperature, the object emits infrared light. In the electromagnetic wave spectrum, the wavelength of infrared rays is 1 μm to 1000 μm. When the temperature of the object approaches 1112 degrees Fahrenheit (600 ° C.), it begins to glow red.
図５には、フェムト秒を含んだ時間目盛を示す。 FIG. 5 shows a time scale including femtoseconds.
図６には、フェムト秒レーザ再生増幅器を示す。この増幅器に仕様は以下の通りである。
平均出力： ７５０ｍＷ
パルス繰り返し周波数： １ＫＨｚ
パルス幅： ５０フェムト秒以下
波長： ７８０−８２０ｎｍ
ビーム径： ７ｍｍ
パルス当たりの出力： ７５０μｍ
エネルギー安定性： １％
空間モデル： ＴＥＭ００
偏光： 直線偏光／水平偏光
FIG. 6 shows a femtosecond laser regenerative amplifier. The specifications of this amplifier are as follows.
Average power: 750mW
Pulse repetition frequency: 1KHz
Pulse width: 50 femtoseconds or less Wavelength: 780-820 nm
Beam diameter: 7mm
Output per pulse: 750 μm
Energy stability: 1%
Spatial model: TEM 00
Polarization: Linear polarization / Horizontal polarization
図７には、赤外線カメラ９及びその仕様を示す。ＴｈｅｒｍａＣＡＭ Ｓ６５ＨＳＶ 赤外線カメラの価格は７０，０００＄である。
温度は４つの区域に分けられる。区域１：−４０℃〜１２０℃、区域２：０℃〜２５０℃、区域３：１００℃〜５００℃、区域４：２５０℃〜１，５００℃。
検出器のスペクトル域は、７．５μｍ〜１３μｍで深赤外線（ｄｅｅｐ ｉｎｆｒａｒｅｄ）である。
読取り精度：＋２℃又は±２％
放射率の補正は０．１〜１．０の間で変動させるか、又は予め物質毎の規定値をリストから選択する。
熱感度は０．０５℃である。
カメラは、画素数が６４０×４８０のフルカラーで高解像度１４ビットの熱画像を撮影できる。
FIG. 7 shows the infrared camera 9 and its specifications. The price of the ThermoCAM S65HSV infrared camera is $ 70,000.
The temperature is divided into four zones. Zone 1: -40 ° C to 120 ° C, Zone 2: 0 ° C to 250 ° C, Zone 3: 100 ° C to 500 ° C, Zone 4: 250 ° C to 1,500 ° C.
The spectral range of the detector is 7.5 μm to 13 μm and deep infrared.
Reading accuracy: + 2 ° C or ± 2%
The correction of the emissivity is varied between 0.1 and 1.0, or a predetermined value for each substance is selected from a list in advance.
The thermal sensitivity is 0.05 ° C.
The camera can take a full color 14-bit thermal image with 640 × 480 pixels.
図８には、フェムト秒パルスの特徴を示す。フェムト秒パルスとナノ秒パルスの比較は次の通りである。ナノ秒パルスでは、特有のナノ表面構造は生成できない。ナノ秒パルスは、溶融物の飛び散り及び応力亀裂の形で多量の熱損傷を生成する。フェムト秒パルスは、材料がプラズマ化する前に停止する。フェムト秒パルスは、ナノ秒パルスよりも繰返し精度が改善される。 FIG. 8 shows the characteristics of the femtosecond pulse. A comparison between femtosecond pulses and nanosecond pulses is as follows. A nanosecond pulse cannot produce a unique nanosurface structure. Nanosecond pulses generate a large amount of thermal damage in the form of melt splashes and stress cracks. The femtosecond pulse stops before the material becomes plasma. Femtosecond pulses have improved repeatability over nanosecond pulses.
図８に示すように、プラズマは、以下のように生成される。最初の１００フェムト秒において、電子の加熱及び熱化（ｔｈｅｒｍａｌｉｚａｔｉｏｎ）が起こる。熱電子ガス冷却されてエネルギーが材料の格子に伝達されるのに数フェムト秒を要する。数十ピコ秒後に、試料への熱拡散が起こる。数ナノ秒後に、熱熔融及び浸食が始まる。 As shown in FIG. 8, the plasma is generated as follows. In the first 100 femtoseconds, electron heating and thermalization occurs. It takes several femtoseconds for thermionic gas cooling to transfer energy to the lattice of materials. After tens of picoseconds, thermal diffusion to the sample occurs. After a few nanoseconds, heat melting and erosion begin.
図９には、物体の赤外線像を示し、温度を測定している。左側は装置、測定対象のホットドッグ及び金鏡の配置を示す。右側は装置によるホットドッグ自体及び金鏡に写った赤外線像を示す。 FIG. 9 shows an infrared image of the object and measures the temperature. The left side shows the arrangement of the device, the hot dog to be measured, and the gold mirror. The right side shows the infrared image reflected on the hot dog itself and the metal mirror.
図１０には、ヒートシンク１０のデジタルカメラ像を示す。 FIG. 10 shows a digital camera image of the heat sink 10.
図１１は、フェムト秒パルスレーザによる加工域１３、１５を有するヒートシンク１０の像、並びに加工域１３、１５の方がヒートシンクの他の部分よりも温度が高いこと示す赤外線像である。 FIG. 11 is an image of the heat sink 10 having the processing regions 13 and 15 by the femtosecond pulse laser, and an infrared image showing that the processing regions 13 and 15 have a higher temperature than the other portions of the heat sink.
図１２には、レーザ加工後のヒートシンク１０の走査型電子顕微鏡像を示す。加工域１３は、左側の像の右上部に倍率４５で示されている。図１２の右側の上下の像のそれぞれの倍率は、３６２と１１，５９０である。 FIG. 12 shows a scanning electron microscope image of the heat sink 10 after laser processing. The processing area 13 is shown at a magnification of 45 in the upper right part of the left image. The magnifications of the upper and lower images on the right side of FIG. 12 are 362, 11,590.
図１３には、中心部２１にステンレススチール角板２３を有するミニプロセッサ２０のフェムト秒パルスレーザ加工前後の像を示す。 FIG. 13 shows images before and after the femtosecond pulse laser processing of the mini processor 20 having the stainless steel square plate 23 in the center portion 21.
図１４には、加工前後のミニプロセッサ３０の赤外線像を示す。レーザ加工前は、ミニプロセッサの赤外線像は黒く、温度が低くミニプロセッサからの熱伝達の可能性が低いことを示している。レーザ加工後は、ミニプロセッサの像３３は明るく、温度が高くミニプロセッサ３０から熱が流出し易いことを示している。 FIG. 14 shows infrared images of the miniprocessor 30 before and after processing. Before laser processing, the infrared image of the miniprocessor is black, indicating that the temperature is low and the possibility of heat transfer from the miniprocessor is low. After laser processing, the miniprocessor image 33 is bright, indicating that the temperature is high and heat tends to flow out of the miniprocessor 30.
図１５には、加工後のミニプロセッサ及びそのデジタル赤外線像を示す。この図の画像では、暗くここでは反射する高い面３５を有するミニプロセッサ３０を示す。右側の画像３７は、赤外線像であり、加工された部分はより明るく、すなわちより高温であり熱伝達の可能性が高いことを示している。 FIG. 15 shows the miniprocessor after processing and its digital infrared image. The image in this figure shows a miniprocessor 30 having a high surface 35 that is dark and here reflective. The image 37 on the right is an infrared image, indicating that the processed part is brighter, i.e. hotter and more likely to transfer heat.
以上、特定の実施例に関して述べたが、以下に規定する特許請求項の範囲により規定される発明の範囲を逸脱することなく、本発明の改造及び変形を構成することができる。 While specific embodiments have been described above, modifications and variations of the present invention may be made without departing from the scope of the invention as defined by the scope of the claims defined below.
１ 電子部品
２ ハウジング
３ 表面
４ 箔
５ サブミクロン以下の凹凸
７ 電磁スペクトル
９ 赤外線カメラ
１０ ヒートシンク
１３ フェムト秒パルスレーザ加工域
１５ フェムト秒パルスレーザ加工域
２０ ミニプロセッサ
２１ （ミニプロセッサの）中心部
２３ ステンレススチール角板
３０ ミニプロセッサ
３１ ミニプロセッサの赤外線像
３３ ミニプロセッサの像
３５ 暗く反射する高い表面３５
３７ 赤外線像
DESCRIPTION OF SYMBOLS 1 Electronic component 2 Housing 3 Surface 4 Foil 5 Concavity and convexity below submicron 7 Electromagnetic spectrum 9 Infrared camera 10 Heat sink 13 Femtosecond pulse laser processing area 15 Femtosecond pulse laser processing area 20 Mini processor 21 (mini processor) central part 23 Stainless steel Steel square plate 30 Miniprocessor 31 Miniprocessor infrared image 33 Miniprocessor image 35 Dark reflective high surface 35
37 Infrared image
Claims (13)
前記電子部品及びハウジングは、フェムト秒パルスレーザにより加工されたサブミクロンの凹凸を有する迅速に熱を散逸する表面を有することを特徴とする装置。 An apparatus comprising an electronic component and a housing,
The electronic component and housing have a rapidly dissipating surface with submicron irregularities machined by a femtosecond pulsed laser.
前記熱を散逸する表面は、フェムト秒パルスレーザにより加工された表面を有するマイクロプロセッサのハウジングを含み、
フェムト秒パルスレーザにより加工された前記表面は、電磁放射及び前記ハウジング及びハウジング内の電子部品の冷却による熱の放射を増加させることを特徴とする請求項１に記載の装置。 The electronic component includes a microprocessor;
The heat dissipating surface comprises a microprocessor housing having a surface machined by a femtosecond pulsed laser;
The apparatus of claim 1, wherein the surface processed by a femtosecond pulsed laser increases electromagnetic radiation and heat radiation due to cooling of the housing and electronic components in the housing.
前記熱を散逸する表面は、フェムト秒パルスレーザにより加工された表面を有するミニプロセッサのハウジングを含み、
フェムト秒パルスレーザにより加工された前記表面は、電磁放射及び前記ハウジング及びハウジング内の電子部品の冷却による熱の放射を増加させることを特徴とする請求項１に記載の装置 The electronic component includes a mini processor,
The heat dissipating surface comprises a miniprocessor housing having a surface machined by a femtosecond pulsed laser;
The apparatus of claim 1, wherein the surface processed by a femtosecond pulsed laser increases electromagnetic radiation and heat radiation due to cooling of the housing and electronic components within the housing.
前記ヒートシンクの表面がフェムト秒パルスレーザにより加工されていることを特徴とする請求項１に記載の装置。 The electronic component and the housing include a heat sink,
The apparatus according to claim 1, wherein a surface of the heat sink is processed by a femtosecond pulse laser.
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| PCT/US2012/049694 WO2014025332A1 (en) | 2012-08-06 | 2012-08-06 | Nano-machined materials using femtosecond pulse-laser technologies for increased surface area and heat-power dissipation |
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| DE (1) | DE112012006782T5 (en) |
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| KR102194694B1 (en) * | 2019-12-31 | 2020-12-24 | 한국과학기술원 | Integrated inspection system using thermography and laser ultrasonic in 3D printing process and 3D printing system having the same |
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| US10106880B2 (en) | 2013-12-31 | 2018-10-23 | The United States Of America, As Represented By The Secretary Of The Navy | Modifying the surface chemistry of a material |
| US10189117B2 (en) | 2013-12-31 | 2019-01-29 | The United States Of America, As Represented By The Secretary Of The Navy | Adhesion improvement via material nanostructuring or texturizing |
| US11999013B2 (en) | 2021-12-29 | 2024-06-04 | PlasmaTex, LLC | Pulsed laser processing of medical devices |
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| US20080299408A1 (en) * | 2006-09-29 | 2008-12-04 | University Of Rochester | Femtosecond Laser Pulse Surface Structuring Methods and Materials Resulting Therefrom |
| CN101380693A (en) * | 2008-10-14 | 2009-03-11 | 南开大学 | Micro-nano structure preparation method on metallic material surface using femtosecond laser |
| CN101531335A (en) * | 2009-04-08 | 2009-09-16 | 西安交通大学 | Method for preparing metal surface superhydrophobic microstructure by femto-second laser |
| CN102036534A (en) * | 2009-09-30 | 2011-04-27 | 吴献桐 | Device with heat dissipation element and manufacturing method thereof |
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| JP2003211400A (en) * | 2002-01-22 | 2003-07-29 | Japan Science & Technology Corp | Refining method using ultra-short pulse laser and workpiece therefor |
| JP2009255141A (en) * | 2008-04-18 | 2009-11-05 | Osaka Univ | High-efficiency hydrogen-storing metallic material and method for manufacturing the same |
| JP2011049281A (en) * | 2009-08-26 | 2011-03-10 | Stanley Electric Co Ltd | Heat radiation material and method for manufacturing the same |
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| CN104603714A (en) | 2015-05-06 |
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| WO2014025332A1 (en) | 2014-02-13 |
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| DE112012006782T5 (en) | 2015-09-10 |
| BR112015002627A2 (en) | 2017-07-04 |
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