JP2015521385A5 - - Google Patents

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Publication number
JP2015521385A5
JP2015521385A5 JP2015512034A JP2015512034A JP2015521385A5 JP 2015521385 A5 JP2015521385 A5 JP 2015521385A5 JP 2015512034 A JP2015512034 A JP 2015512034A JP 2015512034 A JP2015512034 A JP 2015512034A JP 2015521385 A5 JP2015521385 A5 JP 2015521385A5
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JP
Japan
Prior art keywords
plate
cooling
small beam
cooling channels
coolant
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JP2015512034A
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English (en)
Japanese (ja)
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JP5973061B2 (ja
JP2015521385A (ja
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Priority claimed from PCT/EP2013/059948 external-priority patent/WO2013171216A1/en
Publication of JP2015521385A publication Critical patent/JP2015521385A/ja
Publication of JP2015521385A5 publication Critical patent/JP2015521385A5/ja
Application granted granted Critical
Publication of JP5973061B2 publication Critical patent/JP5973061B2/ja
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JP2015512034A 2012-05-14 2013-05-14 荷電粒子マルチ小ビームリソグラフィシステム及び冷却装置製造方法 Active JP5973061B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261646398P 2012-05-14 2012-05-14
US61/646,398 2012-05-14
PCT/EP2013/059948 WO2013171216A1 (en) 2012-05-14 2013-05-14 Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method

Publications (3)

Publication Number Publication Date
JP2015521385A JP2015521385A (ja) 2015-07-27
JP2015521385A5 true JP2015521385A5 (https=) 2016-07-14
JP5973061B2 JP5973061B2 (ja) 2016-08-23

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ID=48444378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015512034A Active JP5973061B2 (ja) 2012-05-14 2013-05-14 荷電粒子マルチ小ビームリソグラフィシステム及び冷却装置製造方法

Country Status (6)

Country Link
EP (1) EP2850635B1 (https=)
JP (1) JP5973061B2 (https=)
KR (1) KR101945964B1 (https=)
CN (1) CN104471669B (https=)
NL (1) NL2010799C2 (https=)
WO (1) WO2013171216A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
CN104428866A (zh) 2012-05-14 2015-03-18 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
JP6224252B2 (ja) * 2013-09-07 2017-11-01 マッパー・リソグラフィー・アイピー・ビー.ブイ. 標的処理ユニット
CN108962708A (zh) * 2013-11-14 2018-12-07 迈普尔平版印刷Ip有限公司 电极堆栈布置
US10486232B2 (en) 2015-04-21 2019-11-26 Varian Semiconductor Equipment Associates, Inc. Semiconductor manufacturing device with embedded fluid conduits
US9829804B1 (en) 2016-07-28 2017-11-28 Mapper Lithography Ip B.V. Substrate holding device, method for manufacturing such a device, and use of such a device in a lithography system
CN108121164B (zh) 2016-11-29 2020-12-01 中芯国际集成电路制造(上海)有限公司 光罩散热装置及其工作方法
TWI842676B (zh) * 2017-08-28 2024-05-21 荷蘭商Asml荷蘭公司 半導體記憶裝置及其製造方法
US12287151B2 (en) * 2021-02-26 2025-04-29 Teradyne, Inc. Thermal plate having a fluid channel

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US3157308A (en) 1961-09-05 1964-11-17 Clark Mfg Co J L Canister type container and method of making the same
US3159408A (en) 1961-10-05 1964-12-01 Grace W R & Co Chuck
US4524308A (en) 1984-06-01 1985-06-18 Sony Corporation Circuits for accomplishing electron beam convergence in color cathode ray tubes
WO1994025880A1 (en) 1993-04-30 1994-11-10 Board Of Regents, The University Of Texas System Megavoltage scanning imager and method for its use
EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
US6046457A (en) * 1998-01-09 2000-04-04 International Business Machines Corporation Charged particle beam apparatus having anticontamination means
JP2000348662A (ja) * 1999-06-02 2000-12-15 Nikon Corp 荷電粒子線照射系、荷電粒子線露光装置及び半導体デバイス製造方法
JP4355446B2 (ja) * 2000-12-28 2009-11-04 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム成形部材
US6563124B2 (en) 2001-03-21 2003-05-13 Applied Materials, Inc. Electron beam apparatus having traversing circuit boards
US6768125B2 (en) * 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
ATE538412T1 (de) 2002-10-25 2012-01-15 Mapper Lithography Ip Bv Lithographisches system
AU2003276779A1 (en) 2002-10-30 2004-05-25 Mapper Lithography Ip B.V. Electron beam exposure system
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
JP4113032B2 (ja) * 2003-04-21 2008-07-02 キヤノン株式会社 電子銃及び電子ビーム露光装置
ATE524822T1 (de) 2003-05-28 2011-09-15 Mapper Lithography Ip Bv Belichtungsverfahren für strahlen aus geladenen teilchen
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NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
WO2016158421A1 (ja) 2015-04-03 2016-10-06 株式会社日立ハイテクノロジーズ 光量検出装置、それを用いた免疫分析装置および荷電粒子線装置

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