KR101945964B1 - 하전 입자 다중-빔렛 리소그래피 시스템 및 냉각 장치 제조 방법 - Google Patents

하전 입자 다중-빔렛 리소그래피 시스템 및 냉각 장치 제조 방법 Download PDF

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KR101945964B1
KR101945964B1 KR1020147035213A KR20147035213A KR101945964B1 KR 101945964 B1 KR101945964 B1 KR 101945964B1 KR 1020147035213 A KR1020147035213 A KR 1020147035213A KR 20147035213 A KR20147035213 A KR 20147035213A KR 101945964 B1 KR101945964 B1 KR 101945964B1
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South Korea
Prior art keywords
cooling
plate
beamlet
shaped body
charged particle
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Korean (ko)
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KR20150010992A (ko
Inventor
요하네스 페트루스 스프렝거스
크리스티안 오텐
렘코 야거
스티즌 빌름 베르만 카렐 스틴브링크
요한 유스트 코닝
빌렘 헨크 어바너스
알렉산더 헨드릭 빈센트 반 빈
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마퍼 리쏘그라피 아이피 비.브이.
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Assigned to 에이에스엠엘 네델란즈 비.브이. reassignment 에이에스엠엘 네델란즈 비.브이. 권리의 전부이전등록 Assignors: 마퍼 리쏘그라피 아이피 비.브이.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H01J2237/0437—Semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31793—Problems associated with lithography
    • H01J2237/31794—Problems associated with lithography affecting masks

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020147035213A 2012-05-14 2013-05-14 하전 입자 다중-빔렛 리소그래피 시스템 및 냉각 장치 제조 방법 Active KR101945964B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261646398P 2012-05-14 2012-05-14
US61/646,398 2012-05-14
PCT/EP2013/059948 WO2013171216A1 (en) 2012-05-14 2013-05-14 Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method

Publications (2)

Publication Number Publication Date
KR20150010992A KR20150010992A (ko) 2015-01-29
KR101945964B1 true KR101945964B1 (ko) 2019-02-11

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Family Applications (1)

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KR1020147035213A Active KR101945964B1 (ko) 2012-05-14 2013-05-14 하전 입자 다중-빔렛 리소그래피 시스템 및 냉각 장치 제조 방법

Country Status (6)

Country Link
EP (1) EP2850635B1 (https=)
JP (1) JP5973061B2 (https=)
KR (1) KR101945964B1 (https=)
CN (1) CN104471669B (https=)
NL (1) NL2010799C2 (https=)
WO (1) WO2013171216A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12287151B2 (en) 2021-02-26 2025-04-29 Teradyne, Inc. Thermal plate having a fluid channel

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US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
CN104428866A (zh) 2012-05-14 2015-03-18 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
JP6224252B2 (ja) * 2013-09-07 2017-11-01 マッパー・リソグラフィー・アイピー・ビー．ブイ． 標的処理ユニット
CN108962708A (zh) * 2013-11-14 2018-12-07 迈普尔平版印刷Ip有限公司 电极堆栈布置
US10486232B2 (en) 2015-04-21 2019-11-26 Varian Semiconductor Equipment Associates, Inc. Semiconductor manufacturing device with embedded fluid conduits
US9829804B1 (en) 2016-07-28 2017-11-28 Mapper Lithography Ip B.V. Substrate holding device, method for manufacturing such a device, and use of such a device in a lithography system
CN108121164B (zh) 2016-11-29 2020-12-01 中芯国际集成电路制造(上海)有限公司 光罩散热装置及其工作方法
TWI842676B (zh) * 2017-08-28 2024-05-21 荷蘭商Ａｓｍｌ荷蘭公司 半導體記憶裝置及其製造方法

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US20020134912A1 (en) 2001-03-21 2002-09-26 Applied Materials, Inc. Electron beam apparatus having traversing circuit boards
JP2006140267A (ja) 2004-11-11 2006-06-01 Hitachi High-Technologies Corp 荷電粒子線露光装置
US20120273690A1 (en) 2011-04-27 2012-11-01 Wieland Marco Jan Jaco Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams

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US3159408A (en) 1961-10-05 1964-12-01 Grace W R & Co Chuck
US4524308A (en) 1984-06-01 1985-06-18 Sony Corporation Circuits for accomplishing electron beam convergence in color cathode ray tubes
WO1994025880A1 (en) 1993-04-30 1994-11-10 Board Of Regents, The University Of Texas System Megavoltage scanning imager and method for its use
EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
US6046457A (en) * 1998-01-09 2000-04-04 International Business Machines Corporation Charged particle beam apparatus having anticontamination means
JP2000348662A (ja) * 1999-06-02 2000-12-15 Nikon Corp 荷電粒子線照射系、荷電粒子線露光装置及び半導体デバイス製造方法
JP4355446B2 (ja) * 2000-12-28 2009-11-04 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム成形部材
US6768125B2 (en) * 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
ATE538412T1 (de) 2002-10-25 2012-01-15 Mapper Lithography Ip Bv Lithographisches system
AU2003276779A1 (en) 2002-10-30 2004-05-25 Mapper Lithography Ip B.V. Electron beam exposure system
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
JP4113032B2 (ja) * 2003-04-21 2008-07-02 キヤノン株式会社 電子銃及び電子ビーム露光装置
ATE524822T1 (de) 2003-05-28 2011-09-15 Mapper Lithography Ip Bv Belichtungsverfahren für strahlen aus geladenen teilchen
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KR101755577B1 (ko) * 2010-11-13 2017-07-07 마퍼 리쏘그라피 아이피 비.브이. 애퍼처 어레이 냉각장치를 갖춘 하전 입자 리소그래피 시스템
US8586949B2 (en) * 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
JP5253532B2 (ja) * 2011-03-01 2013-07-31 キヤノン株式会社 偏向器アレイ、偏向器アレイの製造方法、描画装置、および物品の製造方法
WO2016158421A1 (ja) 2015-04-03 2016-10-06 株式会社日立ハイテクノロジーズ 光量検出装置、それを用いた免疫分析装置および荷電粒子線装置

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Publication number Priority date Publication date Assignee Title
US20020134912A1 (en) 2001-03-21 2002-09-26 Applied Materials, Inc. Electron beam apparatus having traversing circuit boards
JP2006140267A (ja) 2004-11-11 2006-06-01 Hitachi High-Technologies Corp 荷電粒子線露光装置
US20120273690A1 (en) 2011-04-27 2012-11-01 Wieland Marco Jan Jaco Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12287151B2 (en) 2021-02-26 2025-04-29 Teradyne, Inc. Thermal plate having a fluid channel

Also Published As

Publication number Publication date
EP2850635B1 (en) 2016-04-27
WO2013171216A1 (en) 2013-11-21
WO2013171216A9 (en) 2014-02-20
CN104471669B (zh) 2017-02-22
JP5973061B2 (ja) 2016-08-23
EP2850635A1 (en) 2015-03-25
NL2010799A (en) 2013-11-18
WO2013171216A4 (en) 2014-04-10
CN104471669A (zh) 2015-03-25
JP2015521385A (ja) 2015-07-27
KR20150010992A (ko) 2015-01-29
NL2010799C2 (en) 2014-02-03

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