JP2015521364A - データを記憶する抵抗スイッチングメモリにおける中心対称性モット絶縁体の使用 - Google Patents
データを記憶する抵抗スイッチングメモリにおける中心対称性モット絶縁体の使用 Download PDFInfo
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- 239000011149 active material Substances 0.000 claims abstract description 32
- 230000000694 effects Effects 0.000 claims abstract description 11
- 150000002484 inorganic compounds Chemical class 0.000 claims description 6
- 229910010272 inorganic material Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 150000002894 organic compounds Chemical class 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 description 52
- 239000000463 material Substances 0.000 description 41
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- 239000007787 solid Substances 0.000 description 2
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- 238000012360 testing method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- LZJCVNLYDXCIBG-UHFFFAOYSA-N 2-(5,6-dihydro-[1,3]dithiolo[4,5-b][1,4]dithiin-2-ylidene)-5,6-dihydro-[1,3]dithiolo[4,5-b][1,4]dithiine Chemical compound S1C(SCCS2)=C2SC1=C(S1)SC2=C1SCCS2 LZJCVNLYDXCIBG-UHFFFAOYSA-N 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
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- 238000013459 approach Methods 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
他方、半導体(より一般的にはバンド絶縁体)は、完全に満たされているか又は空のエネルギーバンドによって構成される電子構造を有している。これらの化合物においては、満たされている高いバンド(一般に価電子帯(valence band)と呼ばれる。図ではVBとして示している。)の頂上と、低い空のバンド(一般に伝導帯(conduction band)と呼ばれる。図ではCBとして示している)の底との間にある幅Egのエネルギーバンドギャップ内に、フェルミ準位EFが位置している。伝導帯の幅をWとして示している。半導体の場合、フェルミ準位に位置する電子は、エネルギーを得ることができないために電界によって加速されないことがよく知られている。したがって、これらの化合物は、不完全な電気伝導体及び電気絶縁体と呼ばれる。
しかし、同じサイトに位置する電子間の静電反発エネルギー(ハバードエネルギーUと呼ばれる)を考慮すると、部分的に満たされているバンドは、1つの占有されているサブバンドLHB(Lower Hubbard Band(下部ハバードバンド))と、1つの空のサブバンドUHB(Upper Hubbard Band(上部ハバードバンド))とに分けられる。これにより、フェルミ準位EFにおいてエネルギー幅Egのエネルギーバンドギャップが開くことになる。したがって、図3a及び図3bに示すように、フェルミ準位でのこのバンドギャップの開きにより、モット絶縁体には電気的絶縁作用が与えられる。このことは、文献「Masatoshi Imada et al., Metal-insulator transitions, Reviews of Modern Physics, Vol. 70, No. 4, pages 1039-1263 (1998)」により一般的に示されているように、当業者には既知である。
各曲線において、各化合物に関し、スイッチング後の状態が電圧閾値によって定まることがわかる。より詳細には、電界閾値(Ethres)は、化合物NiS2の場合は約7kV/cm、化合物NiS1.89Se0.11の場合は約5kV/cm、化合物NiS1.79Se0.21の場合は約4kV/cm、化合物NiS1.70Se0.30の場合は約3kV/cm、化合物NiS1.63Se0.37の場合は約1.7kV/cmに等しいことが分かる。つまり、電気パルスによって誘導される抵抗スイッチングは、ある電界閾値の発生を伴う電界効果に関連している。各物質は、その電界閾値を超えると、第1の電気抵抗状態から電気抵抗のより低い状態へと切り替わり、基本的論理情報セルが構成されることになる。
各パルスの後に、抵抗が不揮発的に変化することがわかる。NiS2−xSex化合物の場合と同様に、電界の作用を受けて、化合物V〜1.85Cr〜0.15O3が、高抵抗状態(論理値「1」とみなされる)及び低抵抗状態(論理値「0」とみなされる)のいずれかを有する情報ビットを生成できる論理素子を構成することを曲線は示している。物質の疲労効果なく、293Kにおいて複数の抵抗スイッチングサイクルが再現されている。
Claims (6)
- フェルミ準位においてエネルギーバンドギャップを有する中心対称性モット絶縁体群に属する物質(1)の、データを記憶する抵抗スイッチングメモリの活物質としての使用であって、
前記物質は2つの電極(2)間に配置されており、該電極(2)により所定値の電界が印加され、前記物質の電子雪崩効果により少なくとも2つの論理状態を有する基本情報セルが構成される、物質の使用。 - 前記物質は無機化合物のサブファミリーに属するものである、請求項1に記載の物質の使用。
- 前記無機化合物のサブファミリーは、NiS2−xSex、0≦x≦1という化学式を満たすものである、請求項2に記載の物質の使用。
- 前記無機化合物のサブファミリーは、V2−xMxO3、0≦x≦1という化学式を満たすものであり、Mは、TiとCrとFeとAlとGaとのうちの少なくとも1つの元素を含むものである、請求項2に記載の物質の使用。
- 前記物質は有機化合物のサブファミリーに属するものである、請求項1に記載の物質の使用。
- 使用される前記物質の化学組成は、ある電界閾値が定まるように選択されるものであり、前記物質は、前記電界閾値を超えると第1の電気抵抗状態から1以上の別の電気抵抗状態へと切り替わり、少なくとも2つの論理状態を有する基本情報セルが構成される、請求項1〜5のいずれか一項に記載の物質の使用。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1253275 | 2012-04-10 | ||
FR1253275A FR2989212B1 (fr) | 2012-04-10 | 2012-04-10 | Utilisation d'isolants de mott centrosymetriques dans une memoire de stockage de donnees a commutation resistive |
PCT/EP2013/057500 WO2013153120A1 (fr) | 2012-04-10 | 2013-04-10 | Utilisation d'isolants de mott centrosymétriques dans une mémoire de stockage de données à commutation résistive. |
Publications (2)
Publication Number | Publication Date |
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JP2015521364A true JP2015521364A (ja) | 2015-07-27 |
JP6294302B2 JP6294302B2 (ja) | 2018-03-14 |
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JP2015504944A Active JP6294302B2 (ja) | 2012-04-10 | 2013-04-10 | データを記憶する抵抗スイッチングメモリにおける中心対称性モット絶縁体の使用 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9837607B2 (ja) |
EP (1) | EP2836999B1 (ja) |
JP (1) | JP6294302B2 (ja) |
KR (1) | KR102189002B1 (ja) |
FR (1) | FR2989212B1 (ja) |
WO (1) | WO2013153120A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016082095A (ja) * | 2014-10-17 | 2016-05-16 | 株式会社豊田中央研究所 | 電子装置 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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FR3020487B1 (fr) * | 2014-04-28 | 2017-10-06 | Centre Nat Rech Scient | Neurone artificiel mono-composant a base d'isolants de mott, reseau de neurones artificiels et procede de fabrication correspondants |
KR102377569B1 (ko) | 2018-03-15 | 2022-03-22 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 소자 |
KR102326601B1 (ko) * | 2020-04-22 | 2021-11-17 | 브이메모리 주식회사 | 전자 소자 및 전자 소자 제어 방법 |
KR102408639B1 (ko) * | 2020-07-22 | 2022-06-16 | 브이메모리 주식회사 | 전자 소자 및 전자 소자 제어 방법 |
CN113532489A (zh) * | 2021-06-25 | 2021-10-22 | 西安交通大学 | 一种基于莫特绝缘体忆阻器的电容型传感架构 |
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JP2006086310A (ja) * | 2004-09-15 | 2006-03-30 | Japan Science & Technology Agency | 抵抗スイッチング素子及び界面抵抗型不揮発性メモリ素子 |
WO2007026509A1 (ja) * | 2005-08-29 | 2007-03-08 | Sharp Kabushiki Kaisha | 可変抵抗素子及びその製造方法 |
JP2007180406A (ja) * | 2005-12-28 | 2007-07-12 | Toshiba Corp | 不揮発性スイッチング素子およびその製造方法ならびに不揮発性スイッチング素子を有する集積回路 |
WO2007138646A1 (ja) * | 2006-05-25 | 2007-12-06 | Hitachi, Ltd. | 不揮発性メモリ素子およびその製造方法ならびに不揮発性メモリ素子を用いた半導体装置 |
JP2010522424A (ja) * | 2006-11-08 | 2010-07-01 | シメトリックス・コーポレーション | 相関電子メモリ |
WO2011008654A1 (en) * | 2009-07-13 | 2011-01-20 | Seagate Technology Llc | Non-volatile memory cell with non-ohmic selection layer |
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KR100849717B1 (ko) * | 2006-12-28 | 2008-08-01 | 주식회사 하이닉스반도체 | 문턱전압 스위칭소자를 구비하는 메모리장치 |
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2012
- 2012-04-10 FR FR1253275A patent/FR2989212B1/fr not_active Expired - Fee Related
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2013
- 2013-04-10 EP EP13717472.8A patent/EP2836999B1/fr active Active
- 2013-04-10 WO PCT/EP2013/057500 patent/WO2013153120A1/fr active Application Filing
- 2013-04-10 JP JP2015504944A patent/JP6294302B2/ja active Active
- 2013-04-10 US US14/391,994 patent/US9837607B2/en active Active
- 2013-04-10 KR KR1020147030665A patent/KR102189002B1/ko active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006086310A (ja) * | 2004-09-15 | 2006-03-30 | Japan Science & Technology Agency | 抵抗スイッチング素子及び界面抵抗型不揮発性メモリ素子 |
WO2007026509A1 (ja) * | 2005-08-29 | 2007-03-08 | Sharp Kabushiki Kaisha | 可変抵抗素子及びその製造方法 |
JP2007180406A (ja) * | 2005-12-28 | 2007-07-12 | Toshiba Corp | 不揮発性スイッチング素子およびその製造方法ならびに不揮発性スイッチング素子を有する集積回路 |
WO2007138646A1 (ja) * | 2006-05-25 | 2007-12-06 | Hitachi, Ltd. | 不揮発性メモリ素子およびその製造方法ならびに不揮発性メモリ素子を用いた半導体装置 |
JP2010522424A (ja) * | 2006-11-08 | 2010-07-01 | シメトリックス・コーポレーション | 相関電子メモリ |
WO2011008654A1 (en) * | 2009-07-13 | 2011-01-20 | Seagate Technology Llc | Non-volatile memory cell with non-ohmic selection layer |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016082095A (ja) * | 2014-10-17 | 2016-05-16 | 株式会社豊田中央研究所 | 電子装置 |
Also Published As
Publication number | Publication date |
---|---|
FR2989212B1 (fr) | 2014-05-02 |
US20150255714A1 (en) | 2015-09-10 |
EP2836999A1 (fr) | 2015-02-18 |
JP6294302B2 (ja) | 2018-03-14 |
FR2989212A1 (fr) | 2013-10-11 |
EP2836999B1 (fr) | 2019-07-10 |
WO2013153120A1 (fr) | 2013-10-17 |
US9837607B2 (en) | 2017-12-05 |
KR102189002B1 (ko) | 2020-12-09 |
KR20150002729A (ko) | 2015-01-07 |
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