JP2015517734A5 - - Google Patents

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Publication number
JP2015517734A5
JP2015517734A5 JP2015512021A JP2015512021A JP2015517734A5 JP 2015517734 A5 JP2015517734 A5 JP 2015517734A5 JP 2015512021 A JP2015512021 A JP 2015512021A JP 2015512021 A JP2015512021 A JP 2015512021A JP 2015517734 A5 JP2015517734 A5 JP 2015517734A5
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JP
Japan
Prior art keywords
charged particle
dimensional pattern
blocking
dimensional
feature
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JP2015512021A
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English (en)
Japanese (ja)
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JP6239595B2 (ja
JP2015517734A (ja
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Priority claimed from PCT/EP2013/059861 external-priority patent/WO2013171177A1/en
Publication of JP2015517734A publication Critical patent/JP2015517734A/ja
Publication of JP2015517734A5 publication Critical patent/JP2015517734A5/ja
Application granted granted Critical
Publication of JP6239595B2 publication Critical patent/JP6239595B2/ja
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JP2015512021A 2012-05-14 2013-05-14 マルチ小ビーム露光装置において小ビーム位置を測定するための方法及び２つの小ビーム間の距離を測定するための方法 Active JP6239595B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261646430P 2012-05-14 2012-05-14
US61/646,430 2012-05-14
PCT/EP2013/059861 WO2013171177A1 (en) 2012-05-14 2013-05-14 Method for determining a beamlet position and method for determining a distance between two beamlets in a multi-beamlet exposure apparatus

Publications (3)

Publication Number Publication Date
JP2015517734A JP2015517734A (ja) 2015-06-22
JP2015517734A5 true JP2015517734A5 (https=) 2016-06-23
JP6239595B2 JP6239595B2 (ja) 2017-11-29

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ID=48463964

Family Applications (1)

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JP2015512021A Active JP6239595B2 (ja) 2012-05-14 2013-05-14 マルチ小ビーム露光装置において小ビーム位置を測定するための方法及び２つの小ビーム間の距離を測定するための方法

Country Status (6)

Country Link
US (2) US9653259B2 (https=)
JP (1) JP6239595B2 (https=)
KR (1) KR101959945B1 (https=)
NL (1) NL2010795C2 (https=)
TW (1) TWI582542B (https=)
WO (1) WO2013171177A1 (https=)

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RU2603178C2 (ru) * 2011-06-07 2016-11-20 Кэафьюжн Германи 326 Гмбх Устройство для разделения штучных товаров, предназначенных для хранения в автоматизированных складских помещениях
NL2012029C2 (en) * 2013-12-24 2015-06-26 Mapper Lithography Ip Bv Charged particle lithography system with sensor assembly.
JP6537592B2 (ja) * 2014-08-19 2019-07-03 インテル・コーポレーション 電子ビーム（ｅｂｅａｍ）直接書き込みシステムのためのコーナー部の丸み補正
KR102330221B1 (ko) 2014-11-05 2021-11-25 삼성디스플레이 주식회사 유기 발광 소자 및 이를 포함하는 표시 장치
US10008364B2 (en) * 2015-02-27 2018-06-26 Kla-Tencor Corporation Alignment of multi-beam patterning tool
KR102333285B1 (ko) 2015-08-20 2021-11-30 삼성전자주식회사 노광 장치
JP2018010895A (ja) * 2016-07-11 2018-01-18 株式会社ニューフレアテクノロジー ブランキングアパーチャアレイ、ブランキングアパーチャアレイの製造方法、及びマルチ荷電粒子ビーム描画装置
US11131541B2 (en) 2018-06-29 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Shutter monitoring system
DE102018124044B3 (de) 2018-09-28 2020-02-06 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben eines Vielstrahl-Teilchenstrahlmikroskops und Vielstrahl-Teilchenstrahlsystem
WO2023110331A1 (en) * 2021-12-17 2023-06-22 Asml Netherlands B.V. Charged-particle optical apparatus and projection method
EP4199031A1 (en) * 2021-12-17 2023-06-21 ASML Netherlands B.V. Charged-particle optical apparatus and projection method
EP4202970A1 (en) * 2021-12-24 2023-06-28 ASML Netherlands B.V. Alignment determination method and computer program

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
JPS5468149A (en) * 1977-11-11 1979-06-01 Erionikusu Kk Electron ray application device
JPS5570024A (en) * 1978-11-21 1980-05-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Electron beam exposure method
JP2644257B2 (ja) * 1988-03-08 1997-08-25 株式会社東芝 ビーム検出用ターゲット
US6353231B1 (en) * 1998-08-31 2002-03-05 Nikon Corporation Pinhole detector for electron intensity distribution
EP1335249A1 (en) * 2002-02-06 2003-08-13 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP3544657B2 (ja) * 2002-09-13 2004-07-21 株式会社日立製作所 電子ビーム描画装置
ATE538412T1 (de) 2002-10-25 2012-01-15 Mapper Lithography Ip Bv Lithographisches system
JP2005032508A (ja) * 2003-07-10 2005-02-03 Tokyo Seimitsu Co Ltd 電子ビーム強度分布測定装置、電子ビーム装置、電子ビーム露光装置及び電子ビーム強度分布測定方法
JP3962778B2 (ja) 2004-06-02 2007-08-22 株式会社日立ハイテクノロジーズ 電子ビーム検出器、並びにそれを用いた電子ビーム描画方法及び電子ビーム描画装置
JP4907092B2 (ja) * 2005-03-01 2012-03-28 株式会社日立ハイテクノロジーズ 電子ビーム描画装置および電子ビーム描画方法
US7868300B2 (en) * 2005-09-15 2011-01-11 Mapper Lithography Ip B.V. Lithography system, sensor and measuring method
JP5199097B2 (ja) * 2005-09-15 2013-05-15 マッパー・リソグラフィー・アイピー・ビー．ブイ． リソグラフィシステム、センサ、測定方法
NL1037820C2 (en) * 2010-03-22 2011-09-23 Mapper Lithography Ip Bv Lithography system, sensor, sensor surface element and method of manufacture.
RU2576018C2 (ru) 2010-11-13 2016-02-27 МЭППЕР ЛИТОГРАФИ АйПи Б.В. Способ определения расстояния между двумя составляющими лучами в устройстве экспонирования с множеством составляющих лучей

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