JP2015507353A5 - - Google Patents

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Publication number
JP2015507353A5
JP2015507353A5 JP2014547308A JP2014547308A JP2015507353A5 JP 2015507353 A5 JP2015507353 A5 JP 2015507353A5 JP 2014547308 A JP2014547308 A JP 2014547308A JP 2014547308 A JP2014547308 A JP 2014547308A JP 2015507353 A5 JP2015507353 A5 JP 2015507353A5
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JP
Japan
Prior art keywords
layer
metal oxide
absorber
oxide
photoactive
Prior art date
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Granted
Application number
JP2014547308A
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English (en)
Japanese (ja)
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JP6181665B2 (ja
JP2015507353A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2012/068354 external-priority patent/WO2013090131A2/en
Publication of JP2015507353A publication Critical patent/JP2015507353A/ja
Publication of JP2015507353A5 publication Critical patent/JP2015507353A5/ja
Application granted granted Critical
Publication of JP6181665B2 publication Critical patent/JP6181665B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014547308A 2011-12-15 2012-12-07 安定化された金属酸化物層を有する光電デバイスの形成方法 Expired - Fee Related JP6181665B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161570954P 2011-12-15 2011-12-15
US61/570,954 2011-12-15
PCT/US2012/068354 WO2013090131A2 (en) 2011-12-15 2012-12-07 Method of forming optoelectronic device having a stabilized metal oxide layer

Publications (3)

Publication Number Publication Date
JP2015507353A JP2015507353A (ja) 2015-03-05
JP2015507353A5 true JP2015507353A5 (https=) 2016-01-21
JP6181665B2 JP6181665B2 (ja) 2017-08-16

Family

ID=47520252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014547308A Expired - Fee Related JP6181665B2 (ja) 2011-12-15 2012-12-07 安定化された金属酸化物層を有する光電デバイスの形成方法

Country Status (9)

Country Link
US (1) US20140290738A1 (https=)
EP (1) EP2791072B1 (https=)
JP (1) JP6181665B2 (https=)
KR (1) KR20140114366A (https=)
CN (1) CN103998388B (https=)
BR (1) BR112014014471A8 (https=)
IN (1) IN2014CN04559A (https=)
MX (1) MX2014007159A (https=)
WO (1) WO2013090131A2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140114366A (ko) * 2011-12-15 2014-09-26 다우 글로벌 테크놀로지스 엘엘씨 안정화된 금속 산화물 층을 가진 광전 소자의 형성 방법
KR102009308B1 (ko) * 2018-02-28 2019-08-09 한국에너지기술연구원 산화갈륨 패시베이션층이 삽입된 고효율 양면 투광형 cigs계 태양전지와 그 제조방법 및 이를 적용한 건물일체형태양광발전모듈과 탠덤태양전지

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4612411A (en) * 1985-06-04 1986-09-16 Atlantic Richfield Company Thin film solar cell with ZnO window layer
JP2915812B2 (ja) * 1994-12-07 1999-07-05 科学技術振興事業団 微粒子膜の転写付着方法
EP0743686A3 (en) * 1995-05-15 1998-12-02 Matsushita Electric Industrial Co., Ltd Precursor for semiconductor thin films and method for producing semiconductor thin films
JPH08330071A (ja) * 1995-06-02 1996-12-13 Sony Corp 光学的素子及びその製造方法
JP3873424B2 (ja) * 1997-02-28 2007-01-24 住友化学株式会社 含ケイ素化合物およびそれを用いた有機エレクトロルミネッセンス素子
JPH114009A (ja) * 1997-06-12 1999-01-06 Yamaha Corp 太陽電池の製造方法
US20060057766A1 (en) * 2003-07-08 2006-03-16 Quanxi Jia Method for preparation of semiconductive films
US20070295390A1 (en) 2006-05-05 2007-12-27 Nanosolar, Inc. Individually encapsulated solar cells and solar cell strings having a substantially inorganic protective layer
FR2911336B3 (fr) * 2007-01-15 2009-03-20 Saint Gobain Substrat verrier revetu de couches a tenue mecanique amelioree
CN102362355A (zh) * 2009-03-25 2012-02-22 陶氏环球技术有限责任公司 在薄膜光伏制品上形成保护层的方法和用这样的层制成的制品
DE102009050988B3 (de) * 2009-05-12 2010-11-04 Schott Ag Dünnschichtsolarzelle
TWI514608B (zh) * 2010-01-14 2015-12-21 Dow Global Technologies Llc 具曝露式導電柵格之防溼光伏打裝置
CN102870234B (zh) * 2010-04-30 2016-01-20 陶氏环球技术有限责任公司 制造基于硫属化物的光伏电池的方法
EP2589057A1 (en) * 2010-06-29 2013-05-08 Yeda Research and Development Co. Ltd. Photovoltaic cell and method of its manufacture
US8642884B2 (en) * 2011-09-09 2014-02-04 International Business Machines Corporation Heat treatment process and photovoltaic device based on said process
KR20140114366A (ko) * 2011-12-15 2014-09-26 다우 글로벌 테크놀로지스 엘엘씨 안정화된 금속 산화물 층을 가진 광전 소자의 형성 방법

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