JP2015505644A5 - - Google Patents

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Publication number
JP2015505644A5
JP2015505644A5 JP2014554795A JP2014554795A JP2015505644A5 JP 2015505644 A5 JP2015505644 A5 JP 2015505644A5 JP 2014554795 A JP2014554795 A JP 2014554795A JP 2014554795 A JP2014554795 A JP 2014554795A JP 2015505644 A5 JP2015505644 A5 JP 2015505644A5
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JP
Japan
Prior art keywords
pfet
coupled
gate
bias voltage
reverse bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014554795A
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English (en)
Japanese (ja)
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JP6073930B2 (ja
JP2015505644A (ja
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Publication date
Priority claimed from US13/437,352 external-priority patent/US8760829B2/en
Application filed filed Critical
Publication of JP2015505644A publication Critical patent/JP2015505644A/ja
Publication of JP2015505644A5 publication Critical patent/JP2015505644A5/ja
Application granted granted Critical
Publication of JP6073930B2 publication Critical patent/JP6073930B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014554795A 2012-01-23 2013-01-23 静電放電（ｅｓｄ）保護を備えた電力供給 Active JP6073930B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261589451P 2012-01-23 2012-01-23
US61/589,451 2012-01-23
US13/437,352 2012-04-02
US13/437,352 US8760829B2 (en) 2012-01-23 2012-04-02 Low-impedance high-swing power supply with integrated high positive and negative DC voltage protection and electro-static discharge (ESD) protection
PCT/US2013/022737 WO2013112577A1 (en) 2012-01-23 2013-01-23 Power supply with electrostatic discharge (esd) protection

Publications (3)

Publication Number Publication Date
JP2015505644A JP2015505644A (ja) 2015-02-23
JP2015505644A5 true JP2015505644A5 (enExample) 2016-03-03
JP6073930B2 JP6073930B2 (ja) 2017-02-01

Family

ID=48797017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014554795A Active JP6073930B2 (ja) 2012-01-23 2013-01-23 静電放電（ｅｓｄ）保護を備えた電力供給

Country Status (4)

Country Link
US (1) US8760829B2 (enExample)
JP (1) JP6073930B2 (enExample)
CN (1) CN104067390B (enExample)
WO (1) WO2013112577A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6088894B2 (ja) * 2013-04-09 2017-03-01 株式会社メガチップス 過電圧保護回路
US20140376134A1 (en) * 2013-06-19 2014-12-25 Texas Instruments Incorporated Voltage Protection Circuit
US10110206B2 (en) * 2015-05-15 2018-10-23 Analog Devices Global Voltage controlled current path, a voltage clamp, and an electronic component including a voltage clamp
US10340687B2 (en) 2016-03-07 2019-07-02 Texas Instruments Incorporated ESD protection circuit and method with high immunity to hot plug insertion and other transient events
WO2018053843A1 (zh) * 2016-09-26 2018-03-29 深圳市汇顶科技股份有限公司 应用于集成电路之静电放电防护电路
CN109245074B (zh) * 2017-08-21 2019-11-19 福州福大海矽微电子有限公司 用于cpu和链接器之间的热插拔检测端口的保护电路
US10971488B2 (en) * 2018-02-06 2021-04-06 Infineon Technologies Ag Active ESD clamp deactivation
CN111446691B (zh) 2019-01-17 2023-12-01 源芯半导体股份有限公司 暂态电压抑制元件
US11069989B2 (en) * 2019-07-15 2021-07-20 Huawei Technologies Co., Ltd. Method and apparatus for multi-mode multi-level transmitter
JP7632076B2 (ja) * 2021-05-25 2025-02-19 セイコーエプソン株式会社 Ｅｓｄ保護回路、半導体装置、電子機器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6614633B1 (en) 1999-03-19 2003-09-02 Denso Corporation Semiconductor device including a surge protecting circuit
JP4501178B2 (ja) * 1999-07-26 2010-07-14 株式会社デンソー 半導体装置のための保護装置
TW495951B (en) 2001-05-29 2002-07-21 Taiwan Semiconductor Mfg Electro-static discharge protection design for charged-device mode using deep well structure
JP2005235947A (ja) * 2004-02-18 2005-09-02 Fujitsu Ltd 静電気放電保護回路
JP4641215B2 (ja) * 2005-05-20 2011-03-02 株式会社日立製作所 負荷駆動回路、集積回路、及びプラズマディスプレイ
US7453268B2 (en) * 2005-06-29 2008-11-18 Delphi Technologies, Inc. Input power protected ratiometric output sensor circuit
JP4866672B2 (ja) 2006-07-27 2012-02-01 ルネサスエレクトロニクス株式会社 負荷駆動回路
JP2009231650A (ja) * 2008-03-25 2009-10-08 Cosmo Associe:Kk 半導体集積回路
JP2009302367A (ja) 2008-06-16 2009-12-24 Yokogawa Electric Corp 半導体素子の静電保護回路
US8120884B2 (en) 2010-02-09 2012-02-21 Texas Instruments Incorporated Reverse voltage protection circuit
US8179647B2 (en) * 2010-10-04 2012-05-15 Taiwan Semiconductor Manufacturing Co., Ltd. ESD power clamp for high-voltage applications

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