JP6073930B2 - 静電放電（ｅｓｄ）保護を備えた電力供給 - Google Patents

静電放電（ｅｓｄ）保護を備えた電力供給 Download PDF

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Publication number
JP6073930B2
JP6073930B2 JP2014554795A JP2014554795A JP6073930B2 JP 6073930 B2 JP6073930 B2 JP 6073930B2 JP 2014554795 A JP2014554795 A JP 2014554795A JP 2014554795 A JP2014554795 A JP 2014554795A JP 6073930 B2 JP6073930 B2 JP 6073930B2
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Japan
Prior art keywords
pfet
coupled
gate
voltage
circuit
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JP2014554795A
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Japanese (ja)
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JP2015505644A (ja
JP2015505644A5 (enExample
Inventor
ワン リアン
ワン リアン
ジャン ウェイビアオ
ジャン ウェイビアオ
ワン デニング
ワン デニング
エリック クンズ ジョン
エリック クンズ ジョン
Original Assignee
日本テキサス・インスツルメンツ株式会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2014554795A 2012-01-23 2013-01-23 静電放電（ｅｓｄ）保護を備えた電力供給 Active JP6073930B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261589451P 2012-01-23 2012-01-23
US61/589,451 2012-01-23
US13/437,352 2012-04-02
US13/437,352 US8760829B2 (en) 2012-01-23 2012-04-02 Low-impedance high-swing power supply with integrated high positive and negative DC voltage protection and electro-static discharge (ESD) protection
PCT/US2013/022737 WO2013112577A1 (en) 2012-01-23 2013-01-23 Power supply with electrostatic discharge (esd) protection

Publications (3)

Publication Number Publication Date
JP2015505644A JP2015505644A (ja) 2015-02-23
JP2015505644A5 JP2015505644A5 (enExample) 2016-03-03
JP6073930B2 true JP6073930B2 (ja) 2017-02-01

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ID=48797017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014554795A Active JP6073930B2 (ja) 2012-01-23 2013-01-23 静電放電（ｅｓｄ）保護を備えた電力供給

Country Status (4)

Country Link
US (1) US8760829B2 (enExample)
JP (1) JP6073930B2 (enExample)
CN (1) CN104067390B (enExample)
WO (1) WO2013112577A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6088894B2 (ja) * 2013-04-09 2017-03-01 株式会社メガチップス 過電圧保護回路
US20140376134A1 (en) * 2013-06-19 2014-12-25 Texas Instruments Incorporated Voltage Protection Circuit
US10110206B2 (en) * 2015-05-15 2018-10-23 Analog Devices Global Voltage controlled current path, a voltage clamp, and an electronic component including a voltage clamp
US10340687B2 (en) 2016-03-07 2019-07-02 Texas Instruments Incorporated ESD protection circuit and method with high immunity to hot plug insertion and other transient events
EP3352218A4 (en) * 2016-09-26 2018-09-19 Shenzhen Goodix Technology Co., Ltd. Electrostatic discharge protection circuit applied to integrated circuit
CN109245074B (zh) * 2017-08-21 2019-11-19 福州福大海矽微电子有限公司 用于cpu和链接器之间的热插拔检测端口的保护电路
US10971488B2 (en) * 2018-02-06 2021-04-06 Infineon Technologies Ag Active ESD clamp deactivation
CN111446691B (zh) 2019-01-17 2023-12-01 源芯半导体股份有限公司 暂态电压抑制元件
US11069989B2 (en) * 2019-07-15 2021-07-20 Huawei Technologies Co., Ltd. Method and apparatus for multi-mode multi-level transmitter
JP7632076B2 (ja) * 2021-05-25 2025-02-19 セイコーエプソン株式会社 Ｅｓｄ保護回路、半導体装置、電子機器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6614633B1 (en) 1999-03-19 2003-09-02 Denso Corporation Semiconductor device including a surge protecting circuit
JP4501178B2 (ja) * 1999-07-26 2010-07-14 株式会社デンソー 半導体装置のための保護装置
TW495951B (en) 2001-05-29 2002-07-21 Taiwan Semiconductor Mfg Electro-static discharge protection design for charged-device mode using deep well structure
JP2005235947A (ja) * 2004-02-18 2005-09-02 Fujitsu Ltd 静電気放電保護回路
JP4641215B2 (ja) * 2005-05-20 2011-03-02 株式会社日立製作所 負荷駆動回路、集積回路、及びプラズマディスプレイ
US7453268B2 (en) * 2005-06-29 2008-11-18 Delphi Technologies, Inc. Input power protected ratiometric output sensor circuit
JP4866672B2 (ja) 2006-07-27 2012-02-01 ルネサスエレクトロニクス株式会社 負荷駆動回路
JP2009231650A (ja) * 2008-03-25 2009-10-08 Cosmo Associe:Kk 半導体集積回路
JP2009302367A (ja) 2008-06-16 2009-12-24 Yokogawa Electric Corp 半導体素子の静電保護回路
US8120884B2 (en) 2010-02-09 2012-02-21 Texas Instruments Incorporated Reverse voltage protection circuit
US8179647B2 (en) * 2010-10-04 2012-05-15 Taiwan Semiconductor Manufacturing Co., Ltd. ESD power clamp for high-voltage applications

Also Published As

Publication number Publication date
US8760829B2 (en) 2014-06-24
WO2013112577A1 (en) 2013-08-01
JP2015505644A (ja) 2015-02-23
CN104067390B (zh) 2017-05-17
CN104067390A (zh) 2014-09-24
US20130188286A1 (en) 2013-07-25

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