CN104067390B - 具有静电放电(esd)保护的电源 - Google Patents

具有静电放电(esd)保护的电源 Download PDF

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Publication number
CN104067390B
CN104067390B CN201380006356.XA CN201380006356A CN104067390B CN 104067390 B CN104067390 B CN 104067390B CN 201380006356 A CN201380006356 A CN 201380006356A CN 104067390 B CN104067390 B CN 104067390B
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China
Prior art keywords
pfet
coupled
gate
voltage
esd
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CN201380006356.XA
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English (en)
Chinese (zh)
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CN104067390A (zh
Inventor
王亮
张卫表
D·王
J·E·孔兹
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Texas Instruments Inc
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Texas Instruments Inc
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201380006356.XA 2012-01-23 2013-01-23 具有静电放电(esd)保护的电源 Active CN104067390B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261589451P 2012-01-23 2012-01-23
US61/589,451 2012-01-23
US13/437,352 2012-04-02
US13/437,352 US8760829B2 (en) 2012-01-23 2012-04-02 Low-impedance high-swing power supply with integrated high positive and negative DC voltage protection and electro-static discharge (ESD) protection
PCT/US2013/022737 WO2013112577A1 (en) 2012-01-23 2013-01-23 Power supply with electrostatic discharge (esd) protection

Publications (2)

Publication Number Publication Date
CN104067390A CN104067390A (zh) 2014-09-24
CN104067390B true CN104067390B (zh) 2017-05-17

Family

ID=48797017

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380006356.XA Active CN104067390B (zh) 2012-01-23 2013-01-23 具有静电放电(esd)保护的电源

Country Status (4)

Country Link
US (1) US8760829B2 (enExample)
JP (1) JP6073930B2 (enExample)
CN (1) CN104067390B (enExample)
WO (1) WO2013112577A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6088894B2 (ja) * 2013-04-09 2017-03-01 株式会社メガチップス 過電圧保護回路
US20140376134A1 (en) * 2013-06-19 2014-12-25 Texas Instruments Incorporated Voltage Protection Circuit
US10110206B2 (en) * 2015-05-15 2018-10-23 Analog Devices Global Voltage controlled current path, a voltage clamp, and an electronic component including a voltage clamp
US10340687B2 (en) 2016-03-07 2019-07-02 Texas Instruments Incorporated ESD protection circuit and method with high immunity to hot plug insertion and other transient events
WO2018053843A1 (zh) * 2016-09-26 2018-03-29 深圳市汇顶科技股份有限公司 应用于集成电路之静电放电防护电路
CN109245074B (zh) * 2017-08-21 2019-11-19 福州福大海矽微电子有限公司 用于cpu和链接器之间的热插拔检测端口的保护电路
US10971488B2 (en) * 2018-02-06 2021-04-06 Infineon Technologies Ag Active ESD clamp deactivation
CN111446691B (zh) 2019-01-17 2023-12-01 源芯半导体股份有限公司 暂态电压抑制元件
US11069989B2 (en) * 2019-07-15 2021-07-20 Huawei Technologies Co., Ltd. Method and apparatus for multi-mode multi-level transmitter
JP7632076B2 (ja) * 2021-05-25 2025-02-19 セイコーエプソン株式会社 Ｅｓｄ保護回路、半導体装置、電子機器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6888711B2 (en) * 1999-03-19 2005-05-03 Denso Corporation Semiconductor device including a surge protecting circuit
CN1866742A (zh) * 2005-05-20 2006-11-22 株式会社日立制作所 负载驱动电路、集成电路和等离子显示器
WO2007002757A2 (en) * 2005-06-29 2007-01-04 Delphi Technologies, Inc. Input power protected ratiometric output sensor circuit
US20110195744A1 (en) * 2010-02-09 2011-08-11 Weibiao Zhang Reverse Voltage Protection Circuit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4501178B2 (ja) * 1999-07-26 2010-07-14 株式会社デンソー 半導体装置のための保護装置
TW495951B (en) 2001-05-29 2002-07-21 Taiwan Semiconductor Mfg Electro-static discharge protection design for charged-device mode using deep well structure
JP2005235947A (ja) * 2004-02-18 2005-09-02 Fujitsu Ltd 静電気放電保護回路
JP4866672B2 (ja) 2006-07-27 2012-02-01 ルネサスエレクトロニクス株式会社 負荷駆動回路
JP2009231650A (ja) * 2008-03-25 2009-10-08 Cosmo Associe:Kk 半導体集積回路
JP2009302367A (ja) 2008-06-16 2009-12-24 Yokogawa Electric Corp 半導体素子の静電保護回路
US8179647B2 (en) * 2010-10-04 2012-05-15 Taiwan Semiconductor Manufacturing Co., Ltd. ESD power clamp for high-voltage applications

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6888711B2 (en) * 1999-03-19 2005-05-03 Denso Corporation Semiconductor device including a surge protecting circuit
CN1866742A (zh) * 2005-05-20 2006-11-22 株式会社日立制作所 负载驱动电路、集成电路和等离子显示器
WO2007002757A2 (en) * 2005-06-29 2007-01-04 Delphi Technologies, Inc. Input power protected ratiometric output sensor circuit
US20110195744A1 (en) * 2010-02-09 2011-08-11 Weibiao Zhang Reverse Voltage Protection Circuit

Also Published As

Publication number Publication date
JP6073930B2 (ja) 2017-02-01
WO2013112577A1 (en) 2013-08-01
CN104067390A (zh) 2014-09-24
JP2015505644A (ja) 2015-02-23
US20130188286A1 (en) 2013-07-25
US8760829B2 (en) 2014-06-24

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