JP2015502052A5 - - Google Patents

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Publication number
JP2015502052A5
JP2015502052A5 JP2014545967A JP2014545967A JP2015502052A5 JP 2015502052 A5 JP2015502052 A5 JP 2015502052A5 JP 2014545967 A JP2014545967 A JP 2014545967A JP 2014545967 A JP2014545967 A JP 2014545967A JP 2015502052 A5 JP2015502052 A5 JP 2015502052A5
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JP
Japan
Prior art keywords
waveguide
laser
facet
epitaxial structure
substrate
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JP2014545967A
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English (en)
Japanese (ja)
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JP6082021B2 (ja
JP2015502052A (ja
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Priority claimed from US13/690,792 external-priority patent/US8934512B2/en
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Publication of JP2015502052A publication Critical patent/JP2015502052A/ja
Publication of JP2015502052A5 publication Critical patent/JP2015502052A5/ja
Application granted granted Critical
Publication of JP6082021B2 publication Critical patent/JP6082021B2/ja
Active legal-status Critical Current
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JP2014545967A 2011-12-08 2012-12-03 端面発光エッチングファセットレーザ Active JP6082021B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201161568383P 2011-12-08 2011-12-08
US61/568,383 2011-12-08
US201261619190P 2012-04-02 2012-04-02
US61/619,190 2012-04-02
US13/690,792 US8934512B2 (en) 2011-12-08 2012-11-30 Edge-emitting etched-facet lasers
US13/690,792 2012-11-30
PCT/US2012/067612 WO2013085845A1 (en) 2011-12-08 2012-12-03 Edge-emitting etched-facet lasers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016129819A Division JP6258414B2 (ja) 2011-12-08 2016-06-30 端面発光エッチングファセットレーザ

Publications (3)

Publication Number Publication Date
JP2015502052A JP2015502052A (ja) 2015-01-19
JP2015502052A5 true JP2015502052A5 (enExample) 2015-03-19
JP6082021B2 JP6082021B2 (ja) 2017-02-15

Family

ID=48574793

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2014545967A Active JP6082021B2 (ja) 2011-12-08 2012-12-03 端面発光エッチングファセットレーザ
JP2016129819A Active JP6258414B2 (ja) 2011-12-08 2016-06-30 端面発光エッチングファセットレーザ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2016129819A Active JP6258414B2 (ja) 2011-12-08 2016-06-30 端面発光エッチングファセットレーザ

Country Status (5)

Country Link
US (4) US8934512B2 (enExample)
EP (1) EP2789060B1 (enExample)
JP (2) JP6082021B2 (enExample)
CN (1) CN104067462B (enExample)
WO (1) WO2013085845A1 (enExample)

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US8934512B2 (en) 2011-12-08 2015-01-13 Binoptics Corporation Edge-emitting etched-facet lasers
KR102186432B1 (ko) 2014-03-25 2020-12-03 엘지전자 주식회사 플라즈마 전극장치
DE102015115812B4 (de) * 2015-09-18 2025-12-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement sowie Verfahren zur Herstellung eines Bauelements
DE102015116712B4 (de) * 2015-10-01 2024-11-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement
DE102016101942B4 (de) * 2016-02-04 2022-07-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen einer optoelektronischen Leuchtvorrichtung
CN107706738B (zh) * 2016-08-09 2020-07-28 清华大学 分布反馈半导体激光器及其制备方法
CN106229808B (zh) * 2016-09-20 2023-08-29 中国电子科技集团公司第十三研究所 脉冲激光器
CN107872007B (zh) * 2016-09-27 2019-11-22 青岛海信宽带多媒体技术有限公司 一种激光器芯片的制作方法
CN107611772B (zh) * 2017-09-25 2020-07-28 清华大学 电吸收调制激光器及其制备方法
CN108242763B (zh) * 2018-03-05 2020-02-18 中国科学院半导体研究所 电吸收调制激光器的整片结构及其制作测试方法
CN108718032A (zh) * 2018-05-18 2018-10-30 河南仕佳光子科技股份有限公司 一种整片制作和测试边发射光器件的方法
WO2020106974A1 (en) * 2018-11-21 2020-05-28 Skorpios Technologies, Inc. Etched facet in a multi quantum well structure
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CN111029905A (zh) * 2019-11-29 2020-04-17 河南仕佳光子科技股份有限公司 一种整片制作边发射光器件的排版结构
CN111129945B (zh) * 2019-11-29 2021-06-18 河南仕佳光子科技股份有限公司 整片制作省隔离器边发射激光器芯片的方法
CN111082311B (zh) * 2019-12-31 2022-04-01 中国科学院半导体研究所 单片光子集成器件整片制作结构
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DE102021103484A1 (de) * 2021-02-15 2022-08-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum herstellen einer mehrzahl von halbleiterlasern und halbleiterlaser
US20240106200A1 (en) * 2022-09-27 2024-03-28 Lumentum Operations Llc Optical device that includes an epitaxial layer structure with trenches and grooves

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