JP2015214660A - Sheet-like resin composition, laminate sheet and manufacturing method of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of suppressing occurrence of a void that affects reliability in a boundary face between an adherend and a sheet-like resin composition, and capable of manufacturing a highly reliable semiconductor device.SOLUTION: A thermosetting sheet-like resin composition is for filling a space between an adherend and a semiconductor element electrically connected to the adherend. When viscosity of the sheet-like resin composition is measured under a measurement condition at a temperature range of 50°C-250°C, a rate of temperature rise 10°C/min, and a frequency of 1 Hz, viscosity ηat a temperature of 150°C is 0.05 MPa.s≤η≤2.2 MPa.s, and viscosity ηat a temperature of 200°C is 1.0 MPa.s≤η≤100.0 MPa.s.

Description

  The present invention relates to a sheet-shaped resin composition, a laminated sheet, and a method for manufacturing a semiconductor device.

  In recent years, there has been a further demand for thinner and smaller semiconductor devices and their packages. For this purpose, flip chip type semiconductor devices in which a semiconductor element such as a semiconductor chip is mounted on a substrate by flip chip bonding (flip chip connection) are widely used. In flip-chip connection, the circuit surface of the semiconductor chip is opposed to the electrode forming surface of the adherend (face down), and the protruding electrode formed on the circuit surface of the semiconductor chip and the electrode of the adherend are joined. It is an implementation method fixed by.

  After flip chip connection, the space between the semiconductor element and the substrate is filled with a sealing resin in order to protect the surface of the semiconductor element and ensure the connection reliability between the semiconductor element and the substrate. . As such a sealing resin, although a liquid sealing resin is widely used, it is difficult to adjust the injection position and the injection amount with the liquid sealing resin. Therefore, a technique for filling a space between a semiconductor element and a substrate using a sheet-shaped sealing resin (underfill sheet) has been proposed (Patent Document 1).

  In general, in a process using a sheet-shaped resin composition as an underfill sheet, a sheet-shaped resin composition attached to a semiconductor element is filled with a space between an adherend such as a substrate and the semiconductor element. A procedure of connecting a semiconductor element to an adherend and mounting is adopted. In the above process, the space between the adherend and the semiconductor element can be easily filled.

Patent No. 4438973

  In the above process, since the sheet-shaped resin composition bonded to the semiconductor element and the adherend are bonded, the sheet-shaped resin composition adheres closely to the irregularities on the surface of the adherend. Is required. However, as the number of three-dimensional structures such as electrodes on the adherend increases and the circuit becomes narrower, the degree of adhesion of the sheet-shaped resin composition to the adherend decreases, and the adherend and the sheet-shaped resin composition. Voids (bubbles) may be generated between the two. When such bubbles are present, the bubbles may expand and the adhesion between the adherend and the sheet-shaped resin composition may be reduced when decompression or heat treatment is performed in the subsequent steps. As a result, the connection reliability between the semiconductor element and the adherend when the semiconductor element is mounted on the adherend is lowered. In particular, in the case of a conventional semiconductor device having a relatively large scale, the presence of minute voids can be ignored, but the influence of minute voids cannot be ignored as semiconductor devices become smaller and thinner. .

  The present invention provides a method for manufacturing a semiconductor device capable of suppressing the generation of voids affecting the reliability at the interface between an adherend and a sheet-shaped resin composition and manufacturing a highly reliable semiconductor device. Objective.

  The inventors of the present application have conducted intensive studies and found that the object can be achieved by adopting the following configuration, and have completed the present invention.

That is, the present invention is a thermosetting sheet-shaped resin composition for filling a space between an adherend and a semiconductor element electrically connected to the adherend,
When the viscosity of the sheet-shaped resin composition is measured under measurement conditions of a temperature range of 50 ° C. to 250 ° C., a temperature increase rate of 10 ° C./min, and a frequency of 1 Hz,
The viscosity η ^{150 at a} temperature of 150 ° C. is 0.05 MPa · s ≦ η ¹⁵⁰ ≦ 2.2 MPa · s,
The viscosity η ^{200 at a} temperature of 200 ° C. is 1.0 MPa · s ≦ η ²⁰⁰ ≦ 100.0 MPa · s.

In the sheet-like resin composition, when the viscosity is measured under predetermined measurement conditions, the viscosity η ^{150 at} a temperature of 150 ° C. is 0.05 MPa · s ≦ η ¹⁵⁰ ≦ 2.2 MPa · s. At 150 ° C., the thermosetting sheet-shaped resin composition is in a stage where thermal curing is started from a state where it has not been cured until then, or in a stage where thermal curing is proceeding. At the same time, if a void exists, even if it is a very small void, the degree of expansion of the void increases as the temperature rises. By setting the viscosity η ¹⁵⁰ in the above range at the initial stage of thermosetting, the viscosity is increased to such an extent that void expansion can be suppressed, and a good bonding state between the adherend and the semiconductor element is formed. As a result, the increase in viscosity can be suppressed to the extent possible. If the viscosity η ¹⁵⁰ is too low, it is difficult to suppress the expansion of voids. If the viscosity η ¹⁵⁰ is too high, bonding between the adherend and the semiconductor element may be insufficient.

Furthermore, in the sheet-shaped resin composition, the viscosity η ^{200 at} a temperature of 200 ° C. is 1.0 MPa · s ≦ η ²⁰⁰ ≦ 100.0 MPa · s. At 200 ° C., the thermosetting sheet-like resin composition is in a state close to a stage where the thermosetting has progressed considerably and the thermosetting reaction can be regarded as converged (for convenience, this stage is referred to as “complete curing”). is there. When voids are present, the degree of expansion becomes larger at a high temperature of 200 ° C., but the expansion of the voids can be suppressed by setting the viscosity η ²⁰⁰ within the above range at the final stage of thermosetting. If the viscosity η ²⁰⁰ is too low, suppression of void expansion is insufficient, and if it is too high, bonding between the adherend and the semiconductor element may be insufficient.

  As described above, the present invention focuses on the void expansion phenomenon in the heating process for thermosetting the sheet-shaped resin composition after the semiconductor element with the sheet-shaped resin composition is bonded to the adherend. This is a technical idea based on a novel concept of suppressing the expansion of voids by controlling the viscosity at temperature to keep the state minute. With the sheet-like resin composition, a semiconductor device having excellent connection reliability can be manufactured even if a void is bitten.

When the viscosity of the sheet-shaped resin composition is measured under the measurement conditions, the viscosity η ^{80 at} a temperature of 80 ° C. is preferably 0.001 MPa · s ≦ η ⁸⁰ ≦ 1.0 MPa · s. By setting the viscosity η ⁸⁰ at a temperature of 80 ° C. of the sheet-shaped resin composition within the above range, the sheet-shaped resin composition is uneven on the adherend when the adherend is bonded to the sheet-shaped resin composition. Therefore, it is possible to prevent the void from being caught. As a result, the absolute amount of voids between elements from the beginning can be reduced, and a semiconductor device with better connection reliability can be manufactured. If the viscosity η ⁸⁰ is too low, the amount of protrusion from between the adherend and the semiconductor element becomes large, and if it is too high, the followability to the unevenness of the adherend is lowered.

The viscosity η ⁸⁰ is 0.01 MPa · s ≦ η ⁸⁰ ≦ 0.1 MPa · s, the viscosity η ¹⁵⁰ is 0.1 MPa · s ≦ η ¹⁵⁰ ≦ 2.2 MPa · s, and the viscosity η ²⁰⁰ is 1 It is preferable that 0.0 MPa · s ≦ η ²⁰⁰ ≦ 50.0 MPa · s. By controlling the viscosity at each temperature within the above range, it is possible to achieve higher levels of following the unevenness of the adherend, suppressing the expansion of voids, and joining the adherend and the semiconductor element. it can.

  The sheet-shaped resin composition preferably contains an epoxy resin, a curing agent, a thermoplastic resin, an inorganic filler, and a thermosetting acceleration catalyst. Thereby, control of the viscosity of the said sheet-like resin composition can be performed efficiently.

The thermoplastic resin is preferably an acrylic resin having a weight average molecular weight of 5 × 10 ⁵ or more. Thereby, a moderate viscosity can be provided to the said sheet-like resin composition, and expansion | swelling of a void can be suppressed more efficiently.

  The average particle size of the inorganic filler is preferably 10 nm or more and 500 nm or less. Thereby, control of the viscosity of the said sheet-like resin composition can be made easy, and also moderate transparency can be provided to the said sheet-like resin composition.

  The thermosetting acceleration catalyst is an organic compound containing a nitrogen atom in the molecule, and the molecular weight of the organic compound is preferably 50 to 500. Thereby, the progress degree of the thermosetting reaction accompanying the temperature rise of the sheet-like resin composition can be controlled, and as a result, the design having a desired viscosity at each temperature becomes easy.

The present invention also includes a substrate and a pressure-sensitive adhesive tape having a pressure-sensitive adhesive layer provided on the substrate,
The present invention relates to a laminated sheet comprising the sheet-shaped resin composition laminated on the pressure-sensitive adhesive layer.

  According to this configuration, since an adhesive tape-integrated sheet-shaped resin composition is obtained, the production process is further improved in that the step of bonding the semiconductor element to which the sheet-shaped resin composition is bonded and the adhesive tape can be omitted. Can be improved.

  The adhesive tape may be either a back grinding tape or a dicing tape of a semiconductor wafer.

The present invention further includes a semiconductor comprising an adherend, a semiconductor element electrically connected to the adherend, and a sheet-like resin composition that fills a space between the adherend and the semiconductor element. A device manufacturing method comprising:
A step of preparing a semiconductor element with a sheet-like resin composition in which the sheet-like resin composition is bonded to the semiconductor element;
And a connecting step of electrically connecting the semiconductor element and the adherend while filling a space between the adherend and the semiconductor element with the sheet-shaped resin composition.

  In the manufacturing method, since a sheet-shaped resin composition whose viscosity at each temperature is controlled is used, while achieving a good bonding state between the adherend and the semiconductor element, the expansion of voids is suppressed and high A reliable semiconductor device can be manufactured.

It is a cross-sectional schematic diagram which shows the lamination sheet which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows 1 process of the manufacturing process of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows 1 process of the manufacturing process of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows 1 process of the manufacturing process of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows 1 process of the manufacturing process of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows 1 process of the manufacturing process of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows 1 process of the manufacturing process of the semiconductor device which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows 1 process of the manufacturing process of the semiconductor device which concerns on other embodiment of this invention. It is a cross-sectional schematic diagram which shows 1 process of the manufacturing process of the semiconductor device which concerns on other embodiment of this invention. It is a cross-sectional schematic diagram which shows 1 process of the manufacturing process of the semiconductor device which concerns on other embodiment of this invention. It is a cross-sectional schematic diagram which shows 1 process of the manufacturing process of the semiconductor device which concerns on other embodiment of this invention.

  Embodiments of the present invention will be described below with reference to the drawings. However, in some or all of the drawings, parts unnecessary for the description are omitted, and there are parts shown enlarged or reduced for easy explanation. Unless otherwise stated, terms indicating the positional relationship such as up and down are merely used for ease of explanation and are not intended to limit the configuration of the present invention.

<First Embodiment>
In this embodiment, a back grinding tape is used as an adhesive tape, and a laminated sheet in which a sheet-shaped resin composition and a back grinding tape are integrated and a method for manufacturing a semiconductor device using the laminated sheet will be described as an example. The following description is basically applicable to the case of a sheet-like resin composition alone except for matters relating to the pressure-sensitive adhesive layer.

(Laminated sheet)
As shown in FIG. 1, the laminated sheet 10 includes a back surface grinding tape 1 and a sheet-like resin composition 2 laminated on the back surface grinding tape 1. As shown in FIG. 1, the sheet-like resin composition 2 may be provided in a size sufficient for bonding to the semiconductor wafer 3 (see FIG. 2A), and is applied to the entire surface of the back surface grinding tape 1. It may be laminated.

(Sheet-shaped resin composition)
The sheet-like resin composition 2 in this embodiment can be used as a sealing film that fills a space between a surface-mounted semiconductor element and an adherend.

In the sheet-like resin composition 2, when the viscosity is measured under the measurement conditions of a temperature range of 50 ° C. to 250 ° C., a temperature increase rate of 10 ° C./min, and a frequency of 1 Hz, the viscosity η ^{150 at} a temperature of 150 ° C. is 0.05 MPa · s. It is sufficient that ≦ η ¹⁵⁰ ≦ 2.2 MPa · s. Further, the viscosity η ¹⁵⁰ is preferably 0.1 MPa · s ≦ η ¹⁵⁰ ≦ 2.2 MPa · s. At 150 ° C., the thermosetting sheet-shaped resin composition is in a stage where thermal curing is started from a state where it has not been cured until then, or in a stage where thermal curing is proceeding. At the same time, if a void exists, even if it is a very small void, the degree of expansion of the void increases as the temperature rises. By setting the viscosity η ¹⁵⁰ in the above range at the initial stage of thermosetting, the viscosity is increased to such an extent that void expansion can be suppressed, and a good bonding state between the adherend and the semiconductor element is formed. As a result, the increase in viscosity can be suppressed to the extent possible. If the viscosity η ¹⁵⁰ is too low, it is difficult to suppress the expansion of voids. If the viscosity η ¹⁵⁰ is too high, bonding between the adherend and the semiconductor element may be insufficient.

Further, in the sheet-shaped resin composition, the viscosity η ²⁰⁰ at a temperature of 200 ° C. measured under the above measurement conditions is 1.0 MPa · s ≦ η ²⁰⁰ ≦ 100.0 MPa · s. Furthermore, the viscosity η ²⁰⁰ is preferably 1.0 MPa · s ≦ η ²⁰⁰ ≦ 50.0 MPa · s. At 200 ° C., the thermosetting sheet-shaped resin composition is in a state close to complete curing because the thermosetting has progressed considerably. When voids are present, the degree of expansion becomes larger at a high temperature of 200 ° C., but the expansion of the voids can be suppressed by setting the viscosity η ²⁰⁰ within the above range at the final stage of thermosetting. If the viscosity η ²⁰⁰ is too low, suppression of void expansion is insufficient, and if it is too high, bonding between the adherend and the semiconductor element may be insufficient.

When the viscosity of the sheet-shaped resin composition 2 is measured under the above measurement conditions, the viscosity η ^{80 at} a temperature of 80 ° C. is preferably 0.001 MPa · s ≦ η ⁸⁰ ≦ 1.0 MPa · s. It is preferable that 005 MPa · s ≦ η ⁸⁰ ≦ 0.5 MPa · s. By setting the viscosity η ⁸⁰ at a temperature of 80 ° C. of the sheet-shaped resin composition within the above range, the sheet-shaped resin composition is uneven on the adherend when the adherend is bonded to the sheet-shaped resin composition. Therefore, it is possible to prevent the void from being caught. As a result, the absolute amount of voids between elements from the beginning can be reduced, and a semiconductor device with better connection reliability can be manufactured. If the viscosity η ⁸⁰ is too low, the amount of protrusion from between the adherend and the semiconductor element becomes large, and if it is too high, the followability to the unevenness of the adherend is lowered.

  Examples of the constituent material of the sheet-shaped resin composition include those in which a thermoplastic resin and a thermosetting resin are used in combination. A thermoplastic resin or a thermosetting resin alone can also be used.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Examples thereof include plastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. These thermoplastic resins can be used alone or in combination of two or more. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.

The weight average molecular weight of the acrylic resin is preferably 5 × 10 ⁵ or more, and more preferably 7 × 10 ⁵ or more. Thereby, a moderate viscosity can be provided to the said sheet-like resin composition, and expansion | swelling of a void can be suppressed more efficiently. In addition, from the viewpoint of suppressing an excessive increase in viscosity, the weight average molecular weight is preferably 1 × 10 ⁷ or less.

  The acrylic resin is not particularly limited, and includes one or two or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Examples include polymers as components. Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2 -Ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, dodecyl group and the like.

  In addition, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers such as acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4- (meth) acrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) Methyl ) Hydroxyl group-containing monomers such as acrylate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) ) A sulfonic acid group-containing monomer such as acryloyloxynaphthalene sulfonic acid, a phosphoric acid group-containing monomer such as 2-hydroxyethylacryloyl phosphate, and a cyano group-containing monomer such as acrylonitrile.

  Examples of the thermosetting resin include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. These resins can be used alone or in combination of two or more. In particular, an epoxy resin containing a small amount of ionic impurities or the like that corrode semiconductor elements is preferable. Moreover, a phenol resin is preferable as the curing agent for the epoxy resin.

  The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type. Biphenyl type, naphthalene type, fluorene type, phenol novolac type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., bifunctional epoxy resin or polyfunctional epoxy resin, or hydantoin type, trisglycidyl isocyanurate Type or glycidylamine type epoxy resin is used. These can be used alone or in combination of two or more. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.

  Further, the phenol resin acts as a curing agent for the epoxy resin, for example, a novolac type phenol resin such as a phenol novolac resin, a phenol aralkyl resin, a cresol novolac resin, a tert-butylphenol novolac resin, a nonylphenol novolac resin, Examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. These can be used alone or in combination of two or more. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  In addition, in this embodiment, the sheet-like resin composition using an epoxy resin, a phenol resin, and an acrylic resin is especially preferable. Since these resins have few ionic impurities and high heat resistance, the reliability of the semiconductor element can be ensured. In this case, the mixing ratio of the epoxy resin and the phenol resin is 10 to 1000 parts by weight with respect to 100 parts by weight of the acrylic resin component.

  The thermosetting acceleration catalyst for epoxy resin and phenol resin is not particularly limited, and can be appropriately selected from known thermosetting acceleration catalysts. A thermosetting acceleration | stimulation catalyst can be used individually or in combination of 2 or more types. Examples of the thermosetting acceleration catalyst include an amine thermosetting acceleration catalyst, a phosphorus thermosetting acceleration catalyst, an imidazole thermosetting acceleration catalyst, a boron thermosetting acceleration catalyst, and a phosphorus-boron thermosetting acceleration catalyst. it can.

  Especially, a thermosetting acceleration | stimulation catalyst is an organic compound which contains a nitrogen atom in a molecule | numerator, and it is preferable that the molecular weight of this organic compound is 50-500. Thereby, the progress degree of the thermosetting reaction accompanying the temperature rise of the sheet-like resin composition can be controlled, and as a result, the design having a desired viscosity at each temperature becomes easy. As an example of the organic compound, an imidazole-based thermosetting acceleration catalyst can be suitably used. Commercially available products can also be suitably used, and examples include trade name “2PHZ-PW” (manufactured by Shikoku Kasei Co., Ltd.).

  A flux may be added to the sheet-shaped resin composition 2 in order to remove the oxide film on the surface of the solder bump and facilitate mounting of the semiconductor element. The flux is not particularly limited, and a conventionally known compound having a flux action can be used.For example, diphenolic acid, adipic acid, acetylsalicylic acid, benzoic acid, benzylic acid, azelaic acid, benzylbenzoic acid, malonic acid, 2,2-bis (hydroxymethyl) propionic acid, salicylic acid, o-methoxybenzoic acid (o-anisic acid), m-hydroxybenzoic acid, succinic acid, 2,6-dimethoxymethylparacresol, benzoic hydrazide, carbohydrazide , Malonic acid dihydrazide, succinic acid dihydrazide, glutaric acid dihydrazide, salicylic acid hydrazide, iminodiacetic acid dihydrazide, itaconic acid dihydrazide, citric acid trihydrazide, thiocarbohydrazide, benzophenone hydrazone, 4,4'-oxybisbenzenesulfone Ruhidorajido and adipic acid dihydrazide and the like. The addition amount of the flux is only required to exhibit the above flux effect, and is usually about 0.1 to 20 parts by weight with respect to 100 parts by weight of the resin component contained in the sheet-like resin composition.

  In the present embodiment, the sheet-shaped resin composition 2 may be colored. In the sheet-like resin composition 2, the color exhibited by coloring is not particularly limited, but for example, black, blue, red, green, and the like are preferable. In coloring, it can be appropriately selected from known colorants such as pigments and dyes.

  When the sheet-like resin composition 2 of the present embodiment is previously crosslinked to some extent, a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer is added as a crosslinking agent during production. It is good. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.

  As the crosslinking agent, polyisocyanate compounds such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, an adduct of polyhydric alcohol and diisocyanate are more preferable. The addition amount of the crosslinking agent is usually preferably 0.05 to 7 parts by weight with respect to 100 parts by weight of the polymer. When the amount of the cross-linking agent is more than 7 parts by weight, the adhesive force is lowered, which is not preferable. On the other hand, if it is less than 0.05 parts by weight, the cohesive force is insufficient, which is not preferable. Moreover, you may make it include other polyfunctional compounds, such as an epoxy resin, together with such a polyisocyanate compound as needed.

  Moreover, an inorganic filler can be suitably mix | blended with the sheet-like resin composition 2. FIG. The blending of the inorganic filler makes it possible to impart conductivity, improve thermal conductivity, adjust the storage elastic modulus, and the like.

  Examples of the inorganic filler include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, and other ceramics, aluminum, copper, silver, gold, nickel, chromium, lead. , Various inorganic powders made of metals such as tin, zinc, palladium, solder, or alloys, and other carbon. These can be used alone or in combination of two or more. Among these, silica, particularly fused silica is preferably used.

  The average particle size of the inorganic filler is not particularly limited, but is preferably 10 nm to 500 nm, more preferably 20 nm to 400 nm, and even more preferably 50 nm to 300 nm. By controlling the average particle size of the inorganic filler within the above range, it is possible to easily control the viscosity of the sheet-shaped resin composition and to impart appropriate transparency to the sheet-shaped resin composition. If the average particle size of the inorganic filler is too small, particle aggregation tends to occur, and it may be difficult to form a sheet-shaped resin composition and control the viscosity. On the other hand, if the average particle size is too large, the transparency of the sheet-shaped resin composition is reduced, or the inorganic particles are likely to be caught in the joint between the sheet-shaped resin composition and the adherend. There is a risk that the connection reliability of the semiconductor device may decrease. In the present invention, inorganic fillers having different average particle sizes may be used in combination. The average particle size is a value determined by a photometric particle size distribution meter (manufactured by HORIBA, apparatus name: LA-910).

  When the sheet-shaped resin composition contains an acrylic resin, the amount of the inorganic filler is preferably 100 to 1500 parts by weight, more preferably 200 to 1000 parts by weight, with respect to 100 parts by weight of the acrylic resin component. If the blending amount of the inorganic filler is less than 10 parts by weight, the storage elastic modulus may be lowered and the stress reliability of the package may be greatly impaired. On the other hand, if it exceeds 400 parts by weight, it will cause a decrease in the total light transmittance, or the fluidity of the sheet-like resin composition 2 will decrease, and will not be sufficiently embedded in the irregularities of the substrate or semiconductor element, causing voids and cracks. It may cause.

  The sheet-shaped resin composition preferably contains an epoxy resin, a curing agent, a thermoplastic resin, an inorganic filler, and a thermosetting acceleration catalyst as described above. Thereby, control of the viscosity of a sheet-like resin composition can be performed efficiently.

  In addition to the said inorganic filler, other additives can be suitably mix | blended with the sheet-like resin composition 2 as needed. Examples of other additives include flame retardants, silane coupling agents, ion trapping agents, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more.

  Furthermore, the water absorption rate under the conditions of a temperature of 23 ° C. and a humidity of 70% of the sheet-shaped resin composition 2 before thermosetting is preferably 1% by weight or less, more preferably 0.5% by weight or less. preferable. When the sheet-like resin composition 2 has the water absorption rate as described above, absorption of moisture into the sheet-like resin composition 2 is suppressed, and generation of voids when the semiconductor element 5 is mounted is more efficiently suppressed. be able to. The lower limit of the water absorption rate is preferably as small as possible, substantially 0% by weight is preferable, and 0% by weight is more preferable.

  Although the thickness (total thickness in the case of multiple layers) of the sheet-shaped resin composition 2 is not particularly limited, the strength of the sheet-shaped resin composition 2 and the filling property of the space between the semiconductor element 5 and the adherend 16 are not limited. In consideration, it may be about 10 μm to 100 μm. In addition, what is necessary is just to set the thickness of the sheet-like resin composition 2 considering the gap between the semiconductor element 5 and the to-be-adhered body 16, and the height of a connection member suitably.

  The sheet-shaped resin composition 2 of the laminated sheet 10 is preferably protected by a separator (not shown). The separator has a function as a protective material that protects the sheet-shaped resin composition 2 until it is put to practical use. The separator is peeled off when the semiconductor wafer 3 is stuck on the sheet-shaped resin composition 2 of the laminated sheet. As the separator, a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine release agent, or a long-chain alkyl acrylate release agent can be used.

(Back grinding tape)
The back grinding tape 1 includes a substrate 1a and an adhesive layer 1b laminated on the substrate 1a. In addition, the sheet-like resin composition 2 is laminated | stacked on the adhesive layer 1b.

(Base material)
The base material 1 a is a strength matrix of the laminated sheet 10. For example, polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, ethylene-acetic acid Vinyl copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfur De, aramid (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), paper, and the like. In the case where the pressure-sensitive adhesive layer 1b is of an ultraviolet curable type, the substrate 1a is preferably transparent to ultraviolet rays.

  Examples of the material for the substrate 1a include polymers such as a crosslinked body of the above resin. The plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary.

  The surface of the substrate 1a is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high-voltage impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed.

  As the base material 1a, the same kind or different kinds can be appropriately selected and used, and if necessary, a blend of several kinds can be used. In addition, in order to impart antistatic ability to the base material 1a, a conductive material vapor deposition layer having a thickness of about 30 to 500 mm made of metal, alloy, oxides thereof, or the like is provided on the base material 1a. be able to. Antistatic ability can also be imparted by adding an antistatic agent to the substrate. The substrate 1a may be a single layer or a multilayer of two or more.

  The thickness of the substrate 1a can be determined as appropriate, and is generally about 5 μm to 200 μm, preferably 35 μm to 120 μm.

  In addition, various additives (for example, a colorant, a filler, a plasticizer, an anti-aging agent, an antioxidant, a surfactant, a flame retardant, etc.) are added to the substrate 1a as long as the effects of the present invention are not impaired. May be included.

(Adhesive layer)
The pressure-sensitive adhesive used for forming the pressure-sensitive adhesive layer 1b firmly holds the semiconductor wafer via the sheet-shaped resin composition during back surface grinding, and transfers the semiconductor wafer with the sheet-shaped resin composition to a dicing tape after the back surface grinding. There is no particular limitation as long as the semiconductor wafer with the sheet-shaped resin composition can be controlled so as to be peelable. For example, a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive can be used. As the pressure-sensitive adhesive, an acrylic pressure-sensitive adhesive having an acrylic polymer as a base polymer from the viewpoint of cleanability of an electronic component that is difficult to contaminate semiconductor wafers, glass, etc., with an organic solvent such as ultrapure water or alcohol. Is preferred.

  Examples of the acrylic polymer include those using an acrylic ester as a main monomer component. Examples of the acrylic ester include (meth) acrylic acid alkyl ester (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester, C1-C30 of alkyl groups, such as octadecyl ester and eicosyl ester, especially C4-C18 linear or branched alkyl ester, etc.) and ( Data) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, acrylic polymers such as one or more was used as a monomer component of the cyclohexyl ester etc.). In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

  The acrylic polymer includes units corresponding to the other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance, and the like. You may go out. Examples of such monomer components include carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; The Sulfonic acid groups such as lensulfonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid Containing monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total monomer components.

  Furthermore, since the acrylic polymer is crosslinked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) Examples include acrylates. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

  The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, the content of the low molecular weight substance is preferably small. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3,000,000.

  Moreover, in order to increase the number average molecular weight of the acrylic polymer or the like as the base polymer, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive. Specific examples of the external crosslinking method include a method in which a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine crosslinking agent is added and reacted. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked, and further depending on the intended use as an adhesive. Generally, it is preferable to add about 5 parts by weight or less, and further 0.1 to 5 parts by weight with respect to 100 parts by weight of the base polymer. Furthermore, additives such as various conventionally known tackifiers and anti-aging agents may be used for the pressure-sensitive adhesive, if necessary, in addition to the above components.

  The pressure-sensitive adhesive layer 1b can be formed of a radiation curable pressure-sensitive adhesive. The radiation curable pressure-sensitive adhesive can increase the degree of cross-linking by irradiation with radiation such as ultraviolet rays, and can easily reduce its adhesive strength, and can easily peel a semiconductor wafer with a sheet-shaped resin composition. . Examples of radiation include X-rays, ultraviolet rays, electron beams, α rays, β rays, and neutron rays.

  As the radiation-curable pressure-sensitive adhesive, those having a radiation-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. Examples of the radiation curable pressure-sensitive adhesive include additive-type radiation curable pressure-sensitive adhesives in which radiation-curable monomer components and oligomer components are blended with general pressure-sensitive pressure-sensitive adhesives such as the above-mentioned acrylic pressure-sensitive adhesives and rubber-based pressure-sensitive adhesives. An agent can be illustrated.

  Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Examples include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation curable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a weight average molecular weight in the range of about 100 to 30000 are suitable. The compounding amount of the radiation curable monomer component or oligomer component can be appropriately determined in such an amount that the adhesive force of the pressure-sensitive adhesive layer can be reduced depending on the type of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

  In addition to the additive-type radiation-curable adhesive described above, the radiation-curable adhesive has a carbon-carbon double bond in the polymer side chain, main chain, or main chain terminal as a base polymer. Intrinsic radiation curable adhesives using Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain many, so they are stable without the oligomer components, etc. moving through the adhesive over time. This is preferable because an adhesive layer having a layered structure can be formed.

  As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. Such a base polymer is preferably one having an acrylic polymer as a basic skeleton. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

  The method for introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted. However, it is easy to design a molecule by introducing a carbon-carbon double bond into a polymer side chain. . For example, after a monomer having a functional group is copolymerized in advance with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation-curable carbon-carbon double bond. Examples of the method include condensation or addition reaction while maintaining the above.

  Examples of combinations of these functional groups include a carboxyl group and an epoxy group, a carboxyl group and an aziridyl group, a hydroxyl group and an isocyanate group. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. In addition, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the above preferred combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. As the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

  As the internal radiation curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the radiation curable monomer is not deteriorated. Components and oligomer components can also be blended. The radiation-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

  The radiation curable pressure-sensitive adhesive preferably contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropan-1-one; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; Naphthalene Aromatic sulfonyl chloride compounds such as sulfonyl chloride; photoactive oxime compounds such as 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

  In addition, when curing inhibition by oxygen occurs during irradiation, it is desirable to block oxygen (air) from the surface of the radiation curable pressure-sensitive adhesive layer 1b by some method. For example, a method of covering the surface of the pressure-sensitive adhesive layer 1b with a separator, a method of irradiating radiation such as ultraviolet rays in a nitrogen gas atmosphere, and the like can be mentioned.

  In the pressure-sensitive adhesive layer 1b, various additives (for example, a colorant, a thickener, a bulking agent, a filler, a tackifier, a plasticizer, an antiaging agent, Antioxidants, surfactants, crosslinking agents, etc.) may be included.

  The thickness of the pressure-sensitive adhesive layer 1 b is not particularly limited, but is preferably about 1 to 50 μm from the viewpoint of preventing chipping of the ground surface of the semiconductor wafer and compatibility of fixing and holding the sheet-shaped resin composition 2. Preferably it is 5-40 micrometers, More preferably, it is 10-30 micrometers.

(Laminated sheet manufacturing method)
The laminated sheet 10 according to the present embodiment can be produced, for example, by separately producing the back grinding tape 1 and the sheet-shaped resin composition 2 and finally bonding them together. Specifically, it can be produced according to the following procedure.

  First, the base material 1a can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, a pressure-sensitive adhesive composition for forming a pressure-sensitive adhesive layer is prepared. Resin, additive, etc. which were demonstrated by the term of the adhesive layer are mix | blended with the adhesive composition. After the prepared pressure-sensitive adhesive composition is applied on the substrate 1a to form a coating film, the coating film is dried under predetermined conditions (heat-crosslinked as necessary) to form the pressure-sensitive adhesive layer 1b. . It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 80 to 150 ° C. and the drying time is 0.5 to 5 minutes. Moreover, after apply | coating an adhesive composition on a separator and forming a coating film, the coating film may be dried on the said dry conditions, and the adhesive layer 1b may be formed. Then, the adhesive layer 1b is bonded together with a separator on the base material 1a. Thereby, the tape 1 for back surface grinding provided with the base material 1a and the adhesive layer 1b is produced.

  The sheet-shaped resin composition 2 is produced as follows, for example. First, an adhesive composition that is a material for forming the sheet-shaped resin composition 2 is prepared. As described in the section of the sheet-shaped resin composition, the adhesive composition contains a thermoplastic component, an epoxy resin, various additives, and the like.

  Next, the prepared adhesive composition is applied on a base separator so as to have a predetermined thickness to form a coating film, and then the coating film is dried under predetermined conditions to form a sheet-shaped resin composition. . It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 70 to 160 ° C. and the drying time is 1 to 5 minutes. Moreover, after apply | coating an adhesive composition on a separator and forming a coating film, a coating film may be dried on the said drying conditions, and a sheet-like resin composition may be formed. Then, a sheet-like resin composition is bonded together with a separator on a base material separator.

  Subsequently, the separator is peeled off from the back surface grinding tape 1 and the sheet-shaped resin composition 2, and both are bonded so that the sheet-shaped resin composition and the pressure-sensitive adhesive layer become a bonding surface. Bonding can be performed by, for example, pressure bonding. At this time, the lamination temperature is not particularly limited, and for example, 30 to 100 ° C is preferable, and 40 to 80 ° C is more preferable. Further, the linear pressure is not particularly limited, and for example, 0.98 to 196 N / cm is preferable, and 9.8 to 98 N / cm is more preferable. Next, the base material separator on the sheet-shaped resin composition is peeled off to obtain the laminated sheet according to the present embodiment.

<Method for Manufacturing Semiconductor Device>
In the present embodiment, the backside grinding of the semiconductor wafer is performed using a laminated sheet including the sheet-shaped resin composition laminated on the backside grinding tape, and then dicing on the dicing tape, the semiconductor element is picked up, Finally, the semiconductor element is mounted on the adherend.

  As a typical process of the present embodiment, a bonding process of bonding a circuit surface on which a connection member of a semiconductor wafer is formed and a sheet-shaped resin composition of the laminated sheet, and a grinding process of grinding the back surface of the semiconductor wafer A fixing step of peeling the semiconductor wafer from the back surface grinding tape together with the sheet-shaped resin composition and attaching the semiconductor wafer to a dicing tape; dicing the semiconductor wafer to form a semiconductor element with the sheet-shaped resin composition A dicing step, a pick-up step for peeling the semiconductor element with the sheet-shaped resin composition from the dicing tape, and the connection while filling the space between the adherend and the semiconductor element with the sheet-shaped resin composition. A connection step of electrically connecting the semiconductor element and the adherend through a member;

[Lamination process]
In the bonding step, the circuit surface 3a on which the connection member 4 of the semiconductor wafer 3 is formed and the sheet-shaped resin composition 2 of the laminated sheet 10 are bonded together (see FIG. 2A).

(Semiconductor wafer)
A plurality of connection members 4 are formed on the circuit surface 3a of the semiconductor wafer 3 (see FIG. 2A). The material of the connection member such as a bump or a conductive material is not particularly limited. For example, a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, a tin-zinc metal material, Examples thereof include solders (alloys) such as a tin-zinc-bismuth metal material, a gold metal material, and a copper metal material. The height of the connecting member is also determined according to the application, and is generally about 15 to 100 μm. Of course, the height of each connection member in the semiconductor wafer 3 may be the same or different.

In the method for manufacturing a semiconductor device according to the present embodiment, the thickness of the sheet-shaped resin composition includes the height X (μm) of the connecting member formed on the surface of the semiconductor wafer and the thickness Y of the sheet-shaped resin composition. (Μm) preferably satisfies the following relationship.
0.5 ≦ Y / X ≦ 2

  When the height X (μm) of the connecting member and the thickness Y (μm) of the cured film satisfy the above relationship, the space between the semiconductor element and the adherend can be sufficiently filled. In addition, excessive protrusion of the sheet-shaped resin composition from the space can be prevented, and contamination of the semiconductor element by the sheet-shaped resin composition can be prevented. In addition, when the height of each connection member differs, the height of the highest connection member is used as a reference.

(Lamination)
First, the separator arbitrarily provided on the sheet-shaped resin composition 2 of the laminated sheet 10 is appropriately peeled off, and as shown in FIG. 2A, the circuit surface 3a and the sheet on which the connecting member 4 of the semiconductor wafer 3 is formed. The sheet-shaped resin composition 2 is opposed to the sheet-shaped resin composition 2 and the semiconductor wafer 3 is bonded (mounting).

  The method of bonding is not particularly limited, but a method by pressure bonding is preferable. The crimping is usually performed by a known pressing means such as a crimping roll while applying a pressure of 0.1 to 1 MPa, more preferably 0.3 to 0.7 MPa. Under the present circumstances, you may make it press-fit, heating at about 40-100 degreeC. Moreover, in order to improve adhesiveness, it is also preferable to press-fit under reduced pressure (1-1000 Pa).

[Grinding process]
In the grinding step, the surface (that is, the back surface) 3b opposite to the circuit surface 3a of the semiconductor wafer 3 is ground (see FIG. 2B). The thin processing machine used for back surface grinding of the semiconductor wafer 3 is not particularly limited, and examples thereof include a grinding machine (back grinder) and a polishing pad. Further, the back surface grinding may be performed by a chemical method such as etching. The back surface grinding is performed until the semiconductor wafer has a desired thickness (for example, 700 to 25 μm).

[Fixing process]
After the grinding step, the semiconductor wafer 3 is peeled off from the back surface grinding tape 1 with the sheet-like resin composition 2 attached, and the semiconductor wafer 3 and the dicing tape 11 are attached (see FIG. 2C). At this time, bonding is performed so that the back surface 3b of the semiconductor wafer 3 and the adhesive layer 11b of the dicing tape 11 face each other. Therefore, the sheet-shaped resin composition 2 bonded to the circuit surface 3a of the semiconductor wafer 3 is exposed. The dicing tape 11 has a structure in which an adhesive layer 11b is laminated on a substrate 11a. The base material 11a and the pressure-sensitive adhesive layer 11b can be suitably produced by using the components and the production methods shown in the paragraphs of the base material 1a and the pressure-sensitive adhesive layer 1b of the back grinding tape 1.

  When the pressure-sensitive adhesive layer 1b has radiation curability when the semiconductor wafer 3 is peeled from the back surface grinding tape 1, the pressure-sensitive adhesive layer 1b is irradiated with radiation to cure the pressure-sensitive adhesive layer 1b. Can be easily performed. The radiation dose may be appropriately set in consideration of the type of radiation used, the degree of cure of the pressure-sensitive adhesive layer, and the like.

  In the laminated sheet of this embodiment, it is preferable that the peeling force from the said back surface grinding tape of the said sheet-like resin composition is 0.03-0.10 N / 20mm. Such light peeling force can prevent breakage and deformation of the sheet-shaped resin composition at the time of peeling from the back surface grinding tape, and can also prevent deformation of the semiconductor wafer.

  For the measurement of the peeling force, a sample piece having a width of 20 mm is cut out from the laminated sheet, and this is attached to a silicon mirror wafer placed on a hot plate at 40 ° C. Leave for about 30 minutes and measure the peel force using a tensile tester. The measurement conditions are peeling angle: 90 ° and tensile speed: 300 mm / min. Note that the peel force is measured in an environment at a temperature of 23 ° C. and a relative humidity of 50%. However, when the pressure-sensitive adhesive layer is an ultraviolet curable type, it is affixed to a silicon mirror wafer under the same conditions as described above, and is allowed to stand for about 30 minutes. And the peel strength at that time is measured.

<Ultraviolet irradiation conditions>
Ultraviolet (UV) irradiation device: high-pressure mercury lamp UV irradiation integrated light quantity: 500 mJ / cm ²
Output: 75W
Irradiation intensity: 150 mW / cm ²

[Dicing process]
In the dicing process, with the sheet-shaped resin composition diced by dicing the semiconductor wafer 3 and the sheet-shaped resin composition 2 as shown in FIG. 2D based on the dicing position obtained by direct light, indirect light, infrared light, or the like. The semiconductor element 5 is formed. By passing through a dicing process, the semiconductor wafer 3 is cut into a predetermined size and divided into pieces (small pieces), and a semiconductor chip (semiconductor element) 5 is manufactured. The semiconductor chip 5 obtained here is integrated with the sheet-shaped resin composition 2 cut into the same shape. Dicing is performed according to a conventional method from the circuit surface 3a on which the sheet-shaped resin composition 2 of the semiconductor wafer 3 is bonded.

  In this step, for example, a cutting method called full cut in which cutting is performed up to the dicing tape 11 with a dicing blade can be employed. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. Further, since the semiconductor wafer is bonded and fixed with excellent adhesion by the dicing tape 11, chip chipping and chip jumping can be suppressed, and damage to the semiconductor wafer can also be suppressed. In addition, when the sheet-shaped resin composition is formed of a resin composition containing an epoxy resin, even if the sheet-shaped resin composition is cut by dicing, the paste of the sheet-shaped resin composition of the sheet-shaped resin composition protrudes on the cut surface. Can be suppressed or prevented. As a result, it is possible to suppress or prevent the cut surfaces from reattaching (blocking), and the pickup described later can be performed more satisfactorily.

  In addition, when expanding a dicing tape following a dicing process, this expansion can be performed using a conventionally well-known expanding apparatus. The expanding apparatus includes a donut-shaped outer ring that can push down the dicing tape through the dicing ring, and an inner ring that has a smaller diameter than the outer ring and supports the dicing tape. By this expanding process, it is possible to prevent adjacent semiconductor chips from coming into contact with each other and being damaged in a pickup process described later.

[Pickup process]
In order to collect the semiconductor chip 5 bonded and fixed to the dicing tape 11, as shown in FIG. 2E, the semiconductor chip 5 with the sheet-like resin composition 2 is picked up, and the semiconductor chip 5 and the sheet-like resin composition are picked up. 2 laminate A is peeled off from the dicing tape 11.

  The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up individual semiconductor chips from the base material side of the dicing tape with a needle and picking up the pushed-up semiconductor chips with a pickup device can be mentioned. The picked-up semiconductor chip 5 constitutes a laminate A integrally with the sheet-like resin composition 2 bonded to the circuit surface 3a.

  When the pressure-sensitive adhesive layer 11b is an ultraviolet curable type, the pickup is performed after the pressure-sensitive adhesive layer 11b is irradiated with ultraviolet light. Thereby, the adhesive force with respect to the semiconductor chip 5 of the adhesive layer 11b falls, and peeling of the semiconductor chip 5 becomes easy. As a result, the pickup can be performed without damaging the semiconductor chip 5. Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary. Moreover, as a light source used for ultraviolet irradiation, for example, a low-pressure mercury lamp, a low-pressure high-power lamp, a medium-pressure mercury lamp, an electrodeless mercury lamp, a xenon flash lamp, an excimer lamp, an ultraviolet LED, or the like can be used.

[Mounting process]
In the mounting step, the mounting position of the semiconductor element 5 is obtained in advance by direct light, indirect light, infrared light, or the like, and the space between the adherend 16 and the semiconductor element 5 is set in accordance with the obtained mounting position in the sheet-like resin composition 2. The semiconductor element 5 and the adherend 16 are electrically connected through the connection member 4 while being filled with (see FIG. 2F). Specifically, the semiconductor chip 5 of the stacked body A is fixed to the adherend 16 according to a conventional method with the circuit surface 3a of the semiconductor chip 5 facing the adherend 16. For example, bumps (connection members) 4 formed on the semiconductor chip 5 are brought into contact with a bonding conductive material 17 (solder or the like) attached to the connection pads of the adherend 16 while pressing the conductive material. By melting, the electrical connection between the semiconductor chip 5 and the adherend 16 can be secured, and the semiconductor chip 5 can be fixed to the adherend 16. Since the sheet-shaped resin composition 2 is affixed to the circuit surface 3 a of the semiconductor chip 5, the electrical connection between the semiconductor chip 5 and the adherend 16 is performed at the same time between the semiconductor chip 5 and the adherend 16. Is filled with the sheet-shaped resin composition 2.

  Generally, the heating condition in the mounting process is 100 to 300 ° C., and the pressurizing condition is 0.5 to 500 N. Moreover, you may perform the thermocompression-bonding process in a mounting process in multistep. For example, it is possible to adopt a procedure in which treatment is performed at 150 ° C. and 100 N for 10 seconds and then treatment is performed at 300 ° C. and 100 to 200 N for 10 seconds. By performing thermocompression bonding in multiple stages, the resin between the connection member and the pad can be efficiently removed, and a better metal-to-metal bond can be obtained.

  As the adherend 16, a semiconductor wafer, various substrates such as a lead frame and a circuit board (such as a wiring circuit board), and other semiconductor elements can be used. The material of the substrate is not particularly limited, and examples thereof include a ceramic substrate and a plastic substrate. Examples of the plastic substrate include an epoxy substrate, a bismaleimide triazine substrate, a polyimide substrate, and a glass epoxy substrate. The number of semiconductor elements to be mounted on one adherend is not limited, and may be one or plural. The sheet-like resin composition 2 can be suitably applied to a chip-on-wafer process in which a large number of semiconductor chips are mounted on a semiconductor wafer.

  In the mounting process, one or both of the connection member and the conductive material are melted to connect the bumps 4 on the connection member forming surface 3a of the semiconductor chip 5 and the conductive material 17 on the surface of the adherend 16. However, the temperature at the time of melting the bump 4 and the conductive material 17 is usually about 260 ° C. (for example, 250 ° C. to 300 ° C.). The laminated sheet according to the present embodiment can have heat resistance that can withstand high temperatures in the mounting process by forming the sheet-like resin composition 2 with an epoxy resin or the like.

[Sheet-shaped resin composition curing step]
After the electrical connection between the semiconductor element 5 and the adherend 16 is performed, the sheet-shaped resin composition 2 is cured by heating. Thereby, the surface of the semiconductor element 5 can be protected, and the connection reliability between the semiconductor element 5 and the adherend 16 can be ensured. It does not specifically limit as heating temperature for hardening of a sheet-like resin composition, What is necessary is just about 150-250 degreeC. In addition, this process can be abbreviate | omitted when a sheet-like resin composition hardens | cures by the heat processing in a mounting process.

[Sealing process]
Next, a sealing step may be performed in order to protect the entire semiconductor device 20 including the mounted semiconductor chip 5. The sealing step is performed using a sealing resin. Although it does not specifically limit as sealing conditions at this time, Usually, the thermosetting of the sealing resin is performed by heating at 175 ° C. for 60 seconds to 90 seconds, but the present invention is not limited thereto, For example, it can be cured at 165 ° C. to 185 ° C. for several minutes.

  The sealing resin is not particularly limited as long as it is an insulating resin (insulating resin), and can be appropriately selected from sealing materials such as known sealing resins. Is more preferable. As sealing resin, the resin composition containing an epoxy resin etc. are mentioned, for example. Examples of the epoxy resin include the epoxy resins exemplified above. Moreover, as a sealing resin by the resin composition containing an epoxy resin, in addition to an epoxy resin, a thermosetting resin other than an epoxy resin (such as a phenol resin) or a thermoplastic resin may be included as a resin component. Good. In addition, as a phenol resin, it can utilize also as a hardening | curing agent of an epoxy resin, As such a phenol resin, the phenol resin illustrated above etc. are mentioned.

[Semiconductor device]
Next, a semiconductor device obtained using the laminated sheet will be described with reference to the drawing (see FIG. 2F). In the semiconductor device 20 according to the present embodiment, the semiconductor element 5 and the adherend 16 are connected via the bump (connection member) 4 formed on the semiconductor element 5 and the conductive material 17 provided on the adherend 16. Are electrically connected. The sheet-shaped resin composition 2 is disposed between the semiconductor element 5 and the adherend 16 so as to fill the space. Since the semiconductor device 20 is obtained by the above manufacturing method that employs the predetermined sheet-shaped resin composition 2, good electrical connection is achieved between the semiconductor element 5 and the adherend 16. Accordingly, the surface protection of the semiconductor element 5, the filling of the space between the semiconductor element 5 and the adherend 16, and the electrical connection between the semiconductor element 5 and the adherend 16 become sufficient levels, respectively, and the semiconductor device High reliability can be demonstrated as 20.

Second Embodiment
In the first embodiment, a semiconductor wafer having a circuit formed on one side is used, whereas in the present embodiment, a semiconductor device is manufactured using a semiconductor wafer having a circuit formed on both sides. Further, since the semiconductor wafer used in this embodiment has a target thickness, the grinding step is omitted. Therefore, a laminated sheet including a dicing tape and a predetermined sheet-shaped resin composition laminated on the dicing tape is used as the laminated sheet in the second embodiment. As a representative process prior to the connection process in the second embodiment, a preparation process for preparing the laminated sheet, a semiconductor wafer having a circuit surface having a connection member formed on both sides, and a sheet-like resin composition of the laminated sheet Bonding step for bonding the semiconductor wafer, dicing step for dicing the semiconductor wafer to form a semiconductor element with the sheet-shaped resin composition, pick-up step for peeling the semiconductor element with the sheet-shaped resin composition from the laminated sheet Is mentioned. Thereafter, the semiconductor device is manufactured by performing the steps after the connection step.

[Preparation process]
In the preparation step, a laminated sheet including a dicing tape 41 and a predetermined sheet-shaped resin composition 42 laminated on the dicing tape 41 is prepared (see FIG. 3A). The dicing tape 41 includes a base material 41a and an adhesive layer 41b laminated on the base material 41a. In addition, the sheet-like resin composition 42 is laminated | stacked on the adhesive layer 41b. As the base material 41a and the pressure-sensitive adhesive layer 41b of the dicing tape 41 and the sheet-shaped resin composition 42, the same materials as those in the first embodiment can be used.

[Lamination process]
In the laminating step, as shown in FIG. 3A, the semiconductor wafer 43 on which the circuit surface having the connection member 44 is formed on both sides and the sheet-shaped resin composition 42 of the laminated sheet are bonded together. In addition, since the strength of the semiconductor wafer thinned to a predetermined thickness is weak, the semiconductor wafer may be fixed to a support such as support glass via a temporary fixing material (not shown) for reinforcement. . In this case, after bonding a semiconductor wafer and a sheet-like resin composition, the process of peeling a support body with a temporary fixing material may be included. Which circuit surface of the semiconductor wafer 43 and the sheet-shaped resin composition 42 are bonded together may be changed according to the structure of the target semiconductor device.

  The semiconductor wafer 43 is the same as the semiconductor wafer of the first embodiment except that the circuit surface having the connection member 44 is formed on both surfaces and has a predetermined thickness. The connection members 44 on both surfaces of the semiconductor wafer 43 may be electrically connected or may not be connected. Examples of the electrical connection between the connection members 44 include a connection through a via called a TSV format. As the bonding conditions, the bonding conditions in the first embodiment can be suitably employed.

[Dicing process]
In the dicing process, the semiconductor wafer 43 and the sheet-shaped resin composition 42 are diced to form the semiconductor element 45 with the sheet-shaped resin composition (see FIG. 3B). As the dicing conditions, the conditions in the first embodiment can be suitably employed. In addition, since dicing is performed on the exposed circuit surface of the semiconductor wafer 43, it is easy to detect the dicing position. However, dicing may be performed after confirming the dicing position by irradiating light as necessary. Good.

[Pickup process]
In the pickup process, the semiconductor element 45 with the sheet-shaped resin composition 42 is peeled from the dicing tape 41 (FIG. 3C). As the pickup conditions, various conditions in the first embodiment can be suitably employed.

  In the lamination sheet of this embodiment, it is preferable that the peeling force from the said dicing tape of the said sheet-like resin composition is 0.03-0.10 N / 20mm. Thereby, a semiconductor element with a sheet-like resin composition can be easily picked up.

[Mounting process]
In the mounting process, the semiconductor element 45 and the adherend 66 are electrically connected through the connection member 44 while the space between the adherend 66 and the semiconductor element 45 is filled with the sheet-like resin composition 42 (FIG. See 3D). Various conditions in the first embodiment can be suitably employed as the conditions in the mounting process. Thereby, the semiconductor device 60 according to the present embodiment can be manufactured.

  Thereafter, as in the first embodiment, the sheet-shaped resin composition curing step and the sealing step may be performed as necessary.

<Third Embodiment>
In the first embodiment, the back surface grinding tape is used as a constituent member of the laminated sheet, but in this embodiment, the base material alone is used without providing the adhesive layer of the back surface grinding tape. Therefore, as a lamination sheet of this embodiment, it will be in the state where a sheet-like resin composition was laminated on a substrate. In this embodiment, although the grinding process can be performed arbitrarily, ultraviolet irradiation before the pick-up process is not performed by omitting the adhesive layer. Except for these points, a predetermined semiconductor device can be manufactured through the same steps as in the first embodiment.

<Other embodiments>
In the first to third embodiments, dicing using a dicing blade is employed in the dicing process. Instead, a modified portion is formed inside the semiconductor wafer by laser irradiation, and the modified portion is formed on the modified portion. So-called stealth dicing may be employed in which the semiconductor wafer is divided into pieces along the semiconductor wafer.

  Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in the examples are not intended to limit the scope of the present invention only to those unless otherwise specified. The term “parts” means parts by weight.

[Examples 1-2 and Comparative Examples 1-3]
<Preparation of sheet-shaped resin composition>
The following components were dissolved in methyl ethyl ketone in the proportions shown in Table 1 to prepare an adhesive composition solution having a solid content concentration of 45 to 60% by weight.

Acrylic resin: Acrylic acid ester-based polymer consisting mainly of ethyl acrylate-methyl methacrylate (trade name “Paracron W-197CM”, manufactured by Negami Kogyo Co., Ltd.)
Epoxy resin 1: Trade name “Epicoat 1004”, manufactured by JER Corporation Epoxy resin 2: Trade name “Epicoat 828”, manufactured by JER Corporation Curing agent 1: Phenol resin (trade name “MEH-7851H”, Meiwa Kasei Co., Ltd.) Made)
Curing agent 2: Acid anhydride (trade name “Licacid HH”, manufactured by Shin Nippon Chemical Co., Ltd.)
Inorganic filler: spherical silica (trade name “SO-25R”, manufactured by Admatechs Co., Ltd.)
Thermosetting catalyst: Imidazole catalyst (trade name “2PHZ-PW”, manufactured by Shikoku Kasei Co., Ltd.)
Flux: o-anisic acid (trade name “Orthoanisic acid”, manufactured by Tokyo Chemical Industry Co., Ltd.)

  By applying this adhesive composition solution on a release film made of a polyethylene terephthalate film having a thickness of 38 μm and subjected to silicone release treatment as a release liner (separator), and then drying at 130 ° C. for 2 minutes, A sheet-shaped resin composition having a thickness of 40 μm was prepared.

[Evaluation]
The following items were evaluated using the produced sheet-shaped resin composition. Each evaluation result is shown in Table 1.

<Measurement method of viscosity>
The viscosity of the prepared sheet-shaped resin composition was measured using a viscoelasticity measuring device ARES (manufactured by Rheometric Scientific). The sheet-shaped resin composition is laminated so as to have a thickness of 500 to 1000 μm so that voids do not enter. Measurement end temperature: 250 ° C., temperature increase rate: measured at 10 ° C./min, and reading viscosity values at 80 ° C., 150 ° C., 200 ° C., viscosity η ⁸⁰ , viscosity η ¹⁵⁰ , viscosity η ²⁰⁰ was sought.

<Mounting evaluation>
A sheet-shaped resin composition having a thickness of 40 μm was attached to a test vehicle (manufactured by Waltz) (a wafer having a thickness of 725 μm on which a bump having a height of 40 μm was formed). The affixing conditions were a temperature of 80 ° C. and an affixing pressure of 0.5 MPa under a vacuum degree of 100 Pa.

  Next, the wafer side of the sample A is bonded and fixed to a dicing tape (trade name “WS-01”, manufactured by Nitto Denko Corporation), and the sample A is diced to obtain a semiconductor chip with a sheet-like resin composition (chip) Size: 7 mm square) was prepared as Sample B.

  Next, the picked up sample B was mounted on a mounting substrate (electrode height: 15 μm) having electrodes. Mounting was performed using a flip chip bonder (FC3000W) manufactured by Toray Engineering. The mounting condition was to hold at 200 ° C. for 10 seconds under a load of 0.5 MPa and then hold at 260 ° C. for 10 seconds.

(Void evaluation)
The obtained sample after mounting was polished in parallel with the chip to expose the sheet-shaped resin composition. The void state of the exposed resin portion was confirmed with an optical microscope (200 times), and when no void (maximum diameter: more than 3 μm) was confirmed, “◯”, the occurrence of a void was confirmed even at one location. Cases were evaluated as “x”.

(Joint state evaluation)
The obtained sample after mounting was energized, and the bonding state was confirmed by actually confirming the operation. “○” indicates that the electrical connection is normal and the product is operating normally and there is no crack in the cross-section of the joint. The case where a defect such as a crack or the like occurred in the joint cross section was evaluated as “x”.

From Table 1, it can be seen that in all the examples, the generation or expansion of voids was suppressed, and the semiconductor chip and the substrate were bonded well, and a semiconductor device with good connection reliability could be manufactured. On the other hand, in Comparative Example 1, although the void evaluation was good, the bonding state was insufficient. This is probably because the viscosity η ¹⁵⁰ at 150 ° C. was too high, and the bonding between the bumps of the chip and the electrodes of the substrate was insufficient. In Comparative Examples 2 and 3, the bonding state was good, but voids were confirmed. This viscosity eta ^0.99 at 0.99 ° C. In Comparative Example ^2, viscosity eta ²⁰⁰ is too low, respectively at 200 ° C. In addition to Comparative Example 3, viscosity eta ^0.99, the expansion of voids caused by not sufficiently suppressed Conceivable.

DESCRIPTION OF SYMBOLS 1 Back surface grinding tape 1a, 11a, 41a Base material 1b, 11b, 41b Adhesive layer 2, 42 Sheet-like resin composition 3, 43 Semiconductor wafer 5, 45 Semiconductor chip (semiconductor element)
16, 66 Substrate 10 Laminated sheet 11, 41 Dicing tape 20, 60 Semiconductor device

Claims (10)

A thermosetting sheet-shaped resin composition for filling a space between an adherend and a semiconductor element electrically connected to the adherend,
When the viscosity of the sheet-shaped resin composition is measured under measurement conditions of a temperature range of 50 ° C. to 250 ° C., a temperature increase rate of 10 ° C./min, and a frequency of 1 Hz,
The viscosity η ^{150 at a} temperature of 150 ° C. is 0.05 MPa · s ≦ η ¹⁵⁰ ≦ 2.2 MPa · s,
A sheet-shaped resin composition having a viscosity η ^{200 at a} temperature of 200 ° C. of 1.0 MPa · s ≦ η ²⁰⁰ ≦ 100.0 MPa · s. When measuring the viscosity of the sheet-like resin composition under the measurement conditions,
The sheet-like resin composition according to claim 1, wherein the viscosity η ^{80 at} a temperature of 80 ° C. is 0.001 MPa · s ≦ η ⁸⁰ ≦ 1.0 MPa · s. The viscosity η ⁸⁰ is 0.01 MPa · s ≦ η ⁸⁰ ≦ 0.1 MPa · s,
The viscosity η ¹⁵⁰ is 0.1 MPa · s ≦ η ¹⁵⁰ ≦ 2.2 MPa · s,
The sheet-like resin composition according to claim 2, wherein the viscosity η ²⁰⁰ is 1.0 MPa · s ≦ η ²⁰⁰ ≦ 50.0 MPa · s.   The sheet-like resin composition of any one of Claims 1-3 containing an epoxy resin, a hardening | curing agent, a thermoplastic resin, an inorganic filler, and a thermosetting acceleration | stimulation catalyst. The sheet-shaped resin composition according to claim 4, wherein the thermoplastic resin is an acrylic resin having a weight average molecular weight of 5 × 10 ⁵ or more.   The sheet-shaped resin composition according to claim 4 or 5, wherein the inorganic filler has an average particle diameter of 10 nm to 500 nm.   The sheet-shaped resin composition according to any one of claims 4 to 6, wherein the thermosetting acceleration catalyst is an organic compound containing a nitrogen atom in a molecule, and the molecular weight of the organic compound is 50 to 500. A pressure-sensitive adhesive tape having a base material and a pressure-sensitive adhesive layer provided on the base material;
A laminated sheet comprising: the sheet-like resin composition according to any one of claims 1 to 7 laminated on the pressure-sensitive adhesive layer.   The laminated sheet according to claim 8, wherein the adhesive tape is a back surface grinding tape or a dicing tape of a semiconductor wafer. A method of manufacturing a semiconductor device comprising: an adherend; a semiconductor element electrically connected to the adherend; and a sheet-shaped resin composition that fills a space between the adherend and the semiconductor element. There,
Preparing a semiconductor element with a sheet-like resin composition in which the sheet-like resin composition according to any one of claims 1 to 7 is bonded to the semiconductor element;
And a connecting step of electrically connecting the semiconductor element and the adherend while filling a space between the adherend and the semiconductor element with the sheet-shaped resin composition.

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