JP2015212994A5 - - Google Patents
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- JP2015212994A5 JP2015212994A5 JP2015092990A JP2015092990A JP2015212994A5 JP 2015212994 A5 JP2015212994 A5 JP 2015212994A5 JP 2015092990 A JP2015092990 A JP 2015092990A JP 2015092990 A JP2015092990 A JP 2015092990A JP 2015212994 A5 JP2015212994 A5 JP 2015212994A5
- Authority
- JP
- Japan
- Prior art keywords
- nft
- metal
- containing layer
- subjecting
- conditions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002184 metal Substances 0.000 claims 10
- 239000000463 material Substances 0.000 claims 6
- 238000009792 diffusion process Methods 0.000 claims 4
- 238000000137 annealing Methods 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 238000005224 laser annealing Methods 0.000 claims 1
Claims (5)
- 近接場トランスデューサ(NFT)構造の少なくとも一部を形成する工程と;
前記NFTの一部の少なくとも一方の表面上に材料を堆積させて金属含有層を形成する工程と;
前記金属含有層に、前記NFTの一部の少なくとも一方の表面内への前記材料の少なくとも一部の拡散を引き起こす条件を施す工程と
を含む方法。 - 前記金属含有層に、拡散を引き起こす条件を施す工程が、アニールを含む、請求項1に記載の方法。
- 前記アニールが、オーブンアニールまたはレーザーアニールを含む、請求項2に記載の方法。
- 近接場トランスデューサ(NFT)構造の少なくとも一部を形成する工程と;
前記NFTの少なくとも空気ベアリング表面上に材料を堆積させて金属含有層を形成する工程と;
前記金属含有層に、前記NFTの一部の少なくとも一方の表面内への前記材料の少なくとも一部の拡散を引き起こす条件を施す工程と;
前記金属含有層の少なくとも一部を取り除く工程と;および
オーバーコート層を適用する工程と
を含む方法。 - 近接場トランスデューサ(NFT)構造の少なくとも一部を形成する工程と;
前記NFTの少なくとも空気ベアリング表面上に材料を堆積させて金属含有層を形成する工程と;
前記NFTの空気ベアリング表面上にはない金属含有層の一部を取り除く工程と;
前記金属含有層に、前記NFTの一部の少なくとも一方の表面内への前記材料の少なくとも一部の拡散を引き起こす条件を施す工程と;
前記金属含有層の少なくとも一部を取り除く工程と;および
オーバーコート層を適用する工程
を含む方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/266,920 | 2014-05-01 | ||
US14/266,920 US9305572B2 (en) | 2014-05-01 | 2014-05-01 | Methods of forming portions of near field transducers (NFTS) and articles formed thereby |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015212994A JP2015212994A (ja) | 2015-11-26 |
JP2015212994A5 true JP2015212994A5 (ja) | 2018-06-14 |
Family
ID=54355686
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015092990A Pending JP2015212994A (ja) | 2014-05-01 | 2015-04-30 | 近接場トランスデューサ(nft)の一部を形成する方法およびそれによって形成された物品 |
Country Status (4)
Country | Link |
---|---|
US (3) | US9305572B2 (ja) |
JP (1) | JP2015212994A (ja) |
KR (1) | KR101789600B1 (ja) |
CN (1) | CN105047204B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6038843B2 (ja) * | 2013-06-24 | 2016-12-07 | シーゲイト テクノロジー エルエルシーSeagate Technology LLC | 少なくとも1つの相互混合層を含む装置 |
US9548076B2 (en) | 2013-11-08 | 2017-01-17 | Seagate Technology Llc | Magnetic devices with overcoats |
US9620150B2 (en) * | 2014-11-11 | 2017-04-11 | Seagate Technology Llc | Devices including an amorphous gas barrier layer |
US9552833B2 (en) * | 2014-11-11 | 2017-01-24 | Seagate Technology Llc | Devices including a multilayer gas barrier layer |
US9741381B1 (en) | 2015-05-28 | 2017-08-22 | Seagate Technology Llc | Near field transducers (NFTs) including a protective layer and methods of forming |
US10971176B2 (en) | 2019-02-21 | 2021-04-06 | International Business Machines Corporation | Tunnel magnetoresistive sensor with adjacent gap having chromium alloy seed layer and refractory material layer |
US11377736B2 (en) | 2019-03-08 | 2022-07-05 | Seagate Technology Llc | Atomic layer deposition systems, methods, and devices |
US10643641B1 (en) * | 2019-03-29 | 2020-05-05 | Western Digital Technologies, Inc. | Methods and apparatuses for localized annealing of sliders configured for heat assisted magnetic recording |
US10910007B1 (en) * | 2020-02-14 | 2021-02-02 | Western Digital Technologies, Inc. | Heat-assisted magnetic recording device capable of providing negative electrical potential at NFT |
US11798581B1 (en) | 2021-04-02 | 2023-10-24 | Seagate Technology Llc | Heat-assisted magnetic recording head with nanoparticles |
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JP3407548B2 (ja) | 1996-03-29 | 2003-05-19 | 株式会社日立製作所 | イオン打込み装置及びこれを用いた半導体製造方法 |
AU3224297A (en) | 1996-05-31 | 1998-01-05 | Akashic Memories Corporation | Highly tetrahedral amorphous carbon films and methods for their production |
US6312766B1 (en) | 1998-03-12 | 2001-11-06 | Agere Systems Guardian Corp. | Article comprising fluorinated diamond-like carbon and method for fabricating article |
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JP4184668B2 (ja) | 2002-01-10 | 2008-11-19 | 富士通株式会社 | Cpp構造磁気抵抗効果素子 |
DE602006014454D1 (de) | 2006-12-28 | 2010-07-01 | Fond Per Adroterapia Oncologic | Ionenbeschleunigungssystem für medizinische und/oder andere anwendungen |
US7544958B2 (en) | 2007-03-23 | 2009-06-09 | Varian Semiconductor Equipment Associates, Inc. | Contamination reduction during ion implantation |
US20100190036A1 (en) | 2009-01-27 | 2010-07-29 | Kyriakos Komvopoulos | Systems and Methods for Surface Modification by Filtered Cathodic Vacuum Arc |
DE102009032275A1 (de) | 2009-07-08 | 2011-01-13 | Siemens Aktiengesellschaft | Beschleunigeranlage und Verfahren zur Einstellung einer Partikelenergie |
US7998607B2 (en) | 2009-07-31 | 2011-08-16 | Hitachi Global Storage Technologies Netherlands, B.V. | Partially-oxidized cap layer for hard disk drive magnetic media |
US8351151B2 (en) | 2010-11-02 | 2013-01-08 | Hitachi Global Storage Technologies Netherlands B.V. | Thermally assisted magnetic write head employing a near field transducer (NFT) having a diffusion barrier layer between the near field transducer and a magnetic lip |
US20130164454A1 (en) | 2011-04-07 | 2013-06-27 | Seagate Technology Llc | Methods of forming layers |
EP2568305B1 (en) | 2011-09-09 | 2016-03-02 | Crocus Technology S.A. | Magnetic tunnel junction with an improved tunnel barrier |
US9880232B2 (en) | 2012-03-14 | 2018-01-30 | Seagate Technology Llc | Magnetic sensor manufacturing |
US8514673B1 (en) | 2012-04-24 | 2013-08-20 | Seagate Technology Llc | Layered near-field transducer |
US9281003B2 (en) * | 2012-04-25 | 2016-03-08 | Seagate Technology Llc | Devices including near field transducer and adhesion layers |
US8902719B2 (en) | 2012-04-25 | 2014-12-02 | Seagate Technology Llc | Heat assisted magnetic recording heads having bilayer heat sinks |
US8945731B2 (en) | 2012-06-29 | 2015-02-03 | Seagate Technology Llc | Interlayer for device including NFT and cladding layers |
US20140113160A1 (en) | 2012-10-18 | 2014-04-24 | Seagate Technology Llc | Articles including intermediate layer and methods of forming |
US9047908B2 (en) | 2013-04-23 | 2015-06-02 | HGST Netherlands B.V. | Heat-assisted magnetic recording (HAMR) head with diffusion barrier between waveguide core and write pole lip |
US9281002B2 (en) * | 2013-06-24 | 2016-03-08 | Seagate Technology Llc | Materials for near field transducers and near field transducers containing same |
US8971161B2 (en) | 2013-06-24 | 2015-03-03 | Seagate Technology Llc | Devices including at least one adhesion layer and methods of forming adhesion layers |
JP2015056653A (ja) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | 記憶装置 |
US9099111B2 (en) * | 2013-12-18 | 2015-08-04 | HGST Netherlands B.V. | Heat assisted magnetic recording head employing noble metal alloy as diffusion barrier layer |
-
2014
- 2014-05-01 US US14/266,920 patent/US9305572B2/en active Active
-
2015
- 2015-04-24 CN CN201510203598.9A patent/CN105047204B/zh active Active
- 2015-04-30 KR KR1020150061523A patent/KR101789600B1/ko active IP Right Grant
- 2015-04-30 JP JP2015092990A patent/JP2015212994A/ja active Pending
-
2016
- 2016-04-04 US US15/089,939 patent/US9842613B2/en active Active
-
2017
- 2017-12-11 US US15/837,423 patent/US10424324B2/en active Active
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