JP2015180739A - Production method of silicone polymer - Google Patents

Production method of silicone polymer Download PDF

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JP2015180739A
JP2015180739A JP2015102505A JP2015102505A JP2015180739A JP 2015180739 A JP2015180739 A JP 2015180739A JP 2015102505 A JP2015102505 A JP 2015102505A JP 2015102505 A JP2015102505 A JP 2015102505A JP 2015180739 A JP2015180739 A JP 2015180739A
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silicone polymer
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hydroxide
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JP5915878B2 (en
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健 西川
Takeshi Nishikawa
健 西川
小川 龍治
Ryuji Ogawa
龍治 小川
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Toray Fine Chemicals Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a novel silicone polymer that can be formed into a film at a temperature of 500°C or higher and give a film having characteristics of high transparency and crack resistance.SOLUTION: A production method of a silicone polymer is provided, in which 4-methoxybenzyl trimethoxysilane is hydrolyzed in a mixture solvent of an aprotic solvent and an alcohol solvent or a mixture solvent of a ketone solvent and an alcohol solvent in the presence of a basic catalyst, and further subjected to condensation polymerization to produce a silicone polymer having a structural unit represented by the formula below. In the production method, the basic catalyst is tetrabutylammonium hydroxide, tetraethylammonium hydroxide, or tetramethylammonium hydroxide.

Description

本発明は、液晶表示素子や半導体素子等の電子部品の耐熱性材料として有用なシリコーン重合体の製造方法に関するものである。   The present invention relates to a method for producing a silicone polymer useful as a heat resistant material for electronic parts such as liquid crystal display elements and semiconductor elements.

近年、液晶表示素子や半導体素子等の電子部品に用いられる電子材料としてしては、可視光で透過性が高い高透明性や、素子を製造する際の各種処理工程に耐えられる耐熱性、耐薬品性、クラック耐性などの特性を兼ね備えた樹脂の必要性が高まっている。   In recent years, as electronic materials used for electronic components such as liquid crystal display elements and semiconductor elements, high transparency that is highly transmissive with visible light, heat resistance and resistance to withstand various processing steps when manufacturing elements. There is an increasing need for resins that have properties such as chemical properties and crack resistance.

その中で、微細加工で用いられる材料としてアルカリ溶媒に可溶であるフェノール基を有するシリコーン材料が注目されてきた。このアルカリ可溶性シリコーン材料であるヒドロキシベンジルシルセスキオキサンは例えば2層レジスト法として用いられ、段差基板上に高アスペクト比のパターンを形成することができる(特許文献1)。   Among them, a silicone material having a phenol group that is soluble in an alkaline solvent has attracted attention as a material used in microfabrication. Hydroxybenzylsilsesquioxane, which is an alkali-soluble silicone material, is used as a two-layer resist method, for example, and can form a high aspect ratio pattern on a stepped substrate (Patent Document 1).

このフェノール基を有するシリコーン材料の前駆体であるフェノール基をメチル基やエチル基などのアルキル基で保護したアルコキシ基を含有するシリコーン重合体の合成例は、原料にクロロシランを用いて水で単純に加水分解して合成しており、クロロシランが水と反応して発生する塩酸を触媒にして、酸性条件で加水分解している例が多い。しかし、クロロシランを酸性条件で合成したシリコーン重合体は末端にシラノールが多く残る材料となり、例えばフェノール基を有するシリコーン重合体を合成する脱アルキル反応では、シラノール基が多く残っていると脱アルキル化反応が進行しないため、一旦末端シラノール基を保護した後脱アルキル反応を行わなければならないという欠点がある(特許文献1〜5)。   A synthesis example of a silicone polymer containing an alkoxy group in which a phenol group, which is a precursor of a silicone material having a phenol group, is protected with an alkyl group such as a methyl group or an ethyl group is simply made with water using chlorosilane as a raw material. It is synthesized by hydrolysis, and there are many examples where hydrolysis is performed under acidic conditions using hydrochloric acid generated by the reaction of chlorosilane with water as a catalyst. However, the silicone polymer synthesized under acidic conditions of chlorosilane becomes a material with a large amount of silanol remaining at the end. For example, in a dealkylation reaction for synthesizing a silicone polymer having a phenol group, a dealkylation reaction occurs when a large number of silanol groups remain. Therefore, there is a disadvantage that dealkylation reaction must be performed after protecting the terminal silanol group (Patent Documents 1 to 5).

一方、例えば半導体の導電部として使用されている配線は、近年の高機能化、高密度化により流れる電流が大きくなっており高い熱を発生させる。よってその工程で使用される絶縁膜はより耐熱性のものが求められ、500℃以上で膜形成が可能な高耐熱性材料が求められている。その中で、シルセスキオキサン骨格を有するシリコーン樹脂は、特に耐熱性が優れており、これらの特性を利用して広く利用されてきた。   On the other hand, for example, a wiring used as a conductive portion of a semiconductor generates a high heat due to an increase in flowing current due to recent high functionality and high density. Therefore, the insulating film used in the process is required to be more heat resistant, and a high heat resistant material capable of forming a film at 500 ° C. or higher is required. Among them, silicone resins having a silsesquioxane skeleton are particularly excellent in heat resistance, and have been widely used by utilizing these characteristics.

このシリコーン樹脂で形成した耐熱膜は、膜表面の平坦性が重要であり、加熱による膜形成後の膜表面にクラックが入らない膜が求められている。例えば、LSI製造の多層配線工程において、加熱により形成した膜にクラックが入っている場合は、その上に膜形成した場合、新たに形成した膜が均一にならずにムラのある膜が形成してしまう可能性がある。そのように形成した膜に露光した場合、不均一な膜界面付近で光の乱反射や散乱が生じ、均一なパターン形成そのものができない。このように膜表面にクラックが入ると光学特性、機械特性などの膜特性に影響を与える場合が多いため、通常クラックが入らない膜が求められている。   In the heat-resistant film formed of this silicone resin, the flatness of the film surface is important, and there is a demand for a film that does not crack on the film surface after film formation by heating. For example, in a multilayer wiring process of LSI manufacturing, if a film formed by heating has cracks, when a film is formed on it, a newly formed film is not uniform and a nonuniform film is formed. There is a possibility that. When the film thus formed is exposed to light, irregular reflection or scattering of light occurs near the non-uniform film interface, and a uniform pattern cannot be formed. Thus, since cracks on the film surface often affect film characteristics such as optical characteristics and mechanical characteristics, a film that does not normally crack is required.

例えば、一般的なフェニル基やメチル基で合成したシリコーン組成物を溶媒に溶解させ400℃に加熱して硬化させた硬化膜についてクラック耐性を評価しているが、400℃での硬化でクラック限界が生じており、500℃以上の高温での使用するプロセスでの適応は難しい。(特許文献6)
以上のことから、500℃以上の温度で製膜ができ、透明性が高く、得られた膜にクラックが入らないシリコーン材料が求められていた。
For example, the crack resistance of a cured film obtained by dissolving a general silicone composition synthesized with a phenyl group or methyl group in a solvent and heating and curing at 400 ° C. is evaluated. Therefore, it is difficult to adapt the process to be used at a high temperature of 500 ° C. or higher. (Patent Document 6)
From the above, there has been a demand for a silicone material that can be formed at a temperature of 500 ° C. or higher, has high transparency, and does not crack in the obtained film.

特開平9−87391号公報JP-A-9-87391 特開平8−334900号公報JP-A-8-334900 特開平8−334901号公報JP-A-8-334901 特開平9−274319号公報JP-A-9-274319 特開2002−338690号公報JP 2002-338690 A 特開2007−238848号公報JP 2007-238848 A

本発明は、高透明性で、耐クラック性の特性を有する膜を形成できる新規シリコーン重合体を提供することを目的としてなされたものである。   The present invention has been made for the purpose of providing a novel silicone polymer capable of forming a film having high transparency and crack resistance.

本発明は、下記式   The present invention has the following formula:

Figure 2015180739
Figure 2015180739

で示されるケイ素化合物を、塩基性触媒の存在下、非プロトン性溶媒とアルコール溶媒を混合した溶媒中、または、ケトン系溶媒とアルコール溶媒を混合した溶媒中で加水分解し、さらに縮重合反応して下記式 Is hydrolyzed in the presence of a basic catalyst in a mixture of an aprotic solvent and an alcohol solvent or in a mixture of a ketone solvent and an alcohol solvent, followed by a condensation polymerization reaction. The following formula

Figure 2015180739
Figure 2015180739

で示される構成単位を有するシリコーン重合体を製造するシリコーン重合体の製造方法であって、塩基性触媒が、テトラブチルアンモニウムヒドロキシド、テトラエチルアンモニウムヒドロキシド、または、テトラメチルアンモニウムヒドロキシドであるシリコーン重合体の製造方法である。 A silicone polymer production method for producing a silicone polymer having a structural unit represented by formula (1), wherein the basic catalyst is tetrabutylammonium hydroxide, tetraethylammonium hydroxide, or tetramethylammonium hydroxide. It is a manufacturing method of coalescence.

本発明のシリコーン重合体は、シリコンウェハーなどの基板にスピンコートした後、500℃以上で加熱しても基板と密着しており、かつ高い透明性と高いクラック耐性を有し、電子材料の絶縁膜や保護膜などに優れた材料となる。   The silicone polymer of the present invention is spin-coated on a substrate such as a silicon wafer, and is in close contact with the substrate even when heated at 500 ° C. or higher, has high transparency and high crack resistance, and is an insulating material for electronic materials. It is an excellent material for films and protective films.

また、本発明のシリコーン共重合体は、可視光領域の波長における透明性が良く、密着性、クラック耐性に優れた材料であり、液晶表示素子や半導体素子等の電子部品や焼成後も高クラック耐性を有していることから、電子デバイスや太陽電池などの高耐熱性材料として利用できる。   In addition, the silicone copolymer of the present invention is a material having good transparency in the visible light wavelength, excellent adhesion and crack resistance, and high cracking even after firing electronic parts such as liquid crystal display elements and semiconductor elements. Since it has resistance, it can be used as a highly heat-resistant material such as an electronic device or a solar battery.

また、本発明のシリコーン共重合体は電子分野に限らず、塗料や接着剤等、幅広い分野に応用できる。   Further, the silicone copolymer of the present invention can be applied not only to the electronic field but also to a wide range of fields such as paints and adhesives.

実施例1の化合物のIRチャートを示す。1 shows an IR chart of the compound of Example 1. 比較例1の化合物のIRチャートを示す。The IR chart of the compound of the comparative example 1 is shown.

本発明は、下記式   The present invention has the following formula:

Figure 2015180739
Figure 2015180739

で示されるケイ素化合物を、塩基性触媒の存在下、非プロトン性溶媒とアルコール溶媒を混合した溶媒中、または、ケトン系溶媒とアルコール溶媒を混合した溶媒中で加水分解し、さらに縮重合反応して下記式 Is hydrolyzed in the presence of a basic catalyst in a mixture of an aprotic solvent and an alcohol solvent or in a mixture of a ketone solvent and an alcohol solvent, followed by a condensation polymerization reaction. The following formula

Figure 2015180739
Figure 2015180739

で示される構成単位を有するシリコーン重合体を製造するシリコーン重合体の製造方法であって、塩基性触媒が、テトラブチルアンモニウムヒドロキシド、テトラエチルアンモニウムヒドロキシド、または、テトラメチルアンモニウムヒドロキシドであるシリコーン重合体の製造方法である。 A silicone polymer production method for producing a silicone polymer having a structural unit represented by formula (1), wherein the basic catalyst is tetrabutylammonium hydroxide, tetraethylammonium hydroxide, or tetramethylammonium hydroxide. It is a manufacturing method of coalescence.

本発明において、シリコーン重合体の下記構造   In the present invention, the following structure of the silicone polymer

Figure 2015180739
Figure 2015180739

は、シルセスキオキサン骨格を示し、各ケイ素原子が3個の酸素原子に結合し、各酸素原子が2個のケイ素原子に結合していることを示す。シルセスキオキサン骨格は、例えば、下記一般式 Represents a silsesquioxane skeleton, wherein each silicon atom is bonded to three oxygen atoms, and each oxygen atom is bonded to two silicon atoms. The silsesquioxane skeleton has, for example, the following general formula

Figure 2015180739
Figure 2015180739

に示す構造式で示すことができる。 It can be shown by the structural formula shown in

本発明は、下記式   The present invention has the following formula:

Figure 2015180739
Figure 2015180739

で示されるケイ素化合物を塩基性触媒存在下、加水分解し、さらに縮重合反応する。 Is hydrolyzed in the presence of a basic catalyst, followed by a condensation polymerization reaction.

Figure 2015180739
Figure 2015180739

で示されるケイ素化合物を使用することにより、分子量が小さく蒸留精製が可能で純度が高いシリコーン重合体が得られる。 By using the silicon compound represented by the formula (1), a silicone polymer having a low molecular weight and capable of being purified by distillation and having a high purity can be obtained.

本発明では、塩基性触媒を使用すると、硬化膜の末端シラノール基が少ない。   In this invention, when a basic catalyst is used, there are few terminal silanol groups of a cured film.

塩基性触媒は、テトラブチルアンモニウムヒドロキシド、テトラエチルアンモニウムヒドロキシド、または、テトラメチルアンモニウムヒドロキシドである。さらに、強い塩基でモノマーの加水分解速度を制御可能なテトラメチルアンモニウムヒドロキシドが好ましい。   The basic catalyst is tetrabutylammonium hydroxide, tetraethylammonium hydroxide, or tetramethylammonium hydroxide. Furthermore, tetramethylammonium hydroxide capable of controlling the hydrolysis rate of the monomer with a strong base is preferable.

塩基性触媒の使用量は原料モノマーのモル数に対して0.001〜1.0当量が好ましく、0.01〜0.5当量がさらに好ましい。   0.001-1.0 equivalent is preferable with respect to the number-of-moles of a raw material monomer, and, as for the usage-amount of a basic catalyst, 0.01-0.5 equivalent is more preferable.

加水分解反応、重縮合反応の反応温度は、0〜100℃が好ましく、触媒を使用することにより反応が容易に進行することから、20〜50℃がより好ましい。   The reaction temperature of the hydrolysis reaction and polycondensation reaction is preferably 0 to 100 ° C., and more preferably 20 to 50 ° C. because the reaction easily proceeds by using a catalyst.

本発明では、ケイ素化合物を、塩基性触媒の存在下、非プロトン性溶媒とアルコール溶媒を混合した溶媒中、または、ケトン系溶媒とアルコール溶媒を混合した溶媒中で加水分解し、さらに縮重合反応する。   In the present invention, a silicon compound is hydrolyzed in a solvent in which an aprotic solvent and an alcohol solvent are mixed or in a solvent in which a ketone solvent and an alcohol solvent are mixed in the presence of a basic catalyst, and further a condensation polymerization reaction is performed. To do.

非プロトン性溶媒は、好ましくは、トルエン、または、キシレンである。ケトン系溶媒は、好ましくは、メチルエチルケトン、メチルイソブチルケトンである。   The aprotic solvent is preferably toluene or xylene. The ketone solvent is preferably methyl ethyl ketone or methyl isobutyl ketone.

アルコール溶媒は、好ましくは、メタノール、エタノール、または、2−プロパノールである。   The alcohol solvent is preferably methanol, ethanol, or 2-propanol.

溶媒コストや得られた共重合体の精製方法を考慮すると、トルエン、メチルイソブチルケトン、2−プロパノールが特に好ましい。   Considering the solvent cost and the purification method of the obtained copolymer, toluene, methyl isobutyl ketone, and 2-propanol are particularly preferable.

また、得られたシロキサン樹脂は、例えば、プロピレングリコールモノメチルエーテル、プロピレングリコールモノメチルエーテルアセテート、ジエチレングリコールモノメチルエーテル、乳酸エチルなどの高沸点溶媒に溶解させて、シリコンウェハーやガラス基板に塗布することができる。プロピレングリコールモノメチルエーテル、プロピレングリコールモノメチルエーテルアセテート、ジエチレングリコールモノメチルエーテル、乳酸エチルなどの高沸点溶媒は、加水分解反応、重縮合反応の反応溶媒として使用することができる。   The obtained siloxane resin can be dissolved in a high-boiling solvent such as propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol monomethyl ether, ethyl lactate, and applied to a silicon wafer or a glass substrate. High boiling solvents such as propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol monomethyl ether, and ethyl lactate can be used as reaction solvents for hydrolysis and polycondensation reactions.

加水分解反応、重縮合反応の反応終了後は、非極性溶媒を添加して反応生成物と水とを分離して、有機溶媒に溶解した反応生成物を回収し、水で洗浄後に溶媒を留去することにより目的の生成物を得ることができる。   After completion of the hydrolysis reaction and polycondensation reaction, a nonpolar solvent is added to separate the reaction product and water, and the reaction product dissolved in the organic solvent is recovered. After washing with water, the solvent is retained. The desired product can be obtained by leaving.

このようにして本発明のシリコーン共重合体を合成することができる。   In this way, the silicone copolymer of the present invention can be synthesized.

以下、実施例を示して本発明を具体的に説明する。   Hereinafter, the present invention will be specifically described with reference to examples.

以下の実施例において、測定には下記装置を使用し、原料は試薬メーカー(東京化成品、和光純薬品、ナカライテスク品、アズマックス品、信越化学品)から購入した一般的な試薬を用いた。   In the following examples, the following apparatus was used for the measurement, and general reagents purchased from reagent manufacturers (Tokyo Chemicals, Wako Pure Chemicals, Nacalai Tesque, Azmax, Shin-Etsu Chemical) were used as raw materials.

測定装置
NMR測定・・・日本電子製400MHz NMR測定器で測定した。
Measuring device NMR measurement: Measured with a 400 MHz NMR measuring instrument manufactured by JEOL.

IR測定・・・島津製IR Prestige-21。溶液の場合はKBr板に合成品を少量塗布し、別のKBr板に挟んで赤外を透過させて測定した。   IR measurement: IR Prestige-21 manufactured by Shimadzu. In the case of a solution, a small amount of a synthetic product was applied to a KBr plate and sandwiched between different KBr plates to transmit infrared light.

GPC測定・・・東ソー製HLC-8220。東ソー製TSK-gel Super3000、TSK-gel Super2000、TSK-gel Super1000を使用し、リファレンスにTSK-gel SuperH-RCを2本使用した。溶媒はTHFを使用し、カラム流量を0.35mL/min、カラム温度は40℃、測定はRIで実施した。分子量分布の基準にはポリスチレン(東ソー製基準サンプル)を使用して分子量分布を算出した。   GPC measurement: HLC-8220 manufactured by Tosoh Corporation. Tosoh TSK-gel Super3000, TSK-gel Super2000, and TSK-gel Super1000 were used, and two TSK-gel SuperH-RCs were used as references. The solvent was THF, the column flow rate was 0.35 mL / min, the column temperature was 40 ° C., and the measurement was performed by RI. The molecular weight distribution was calculated using polystyrene (a standard sample manufactured by Tosoh Corp.) as the standard for the molecular weight distribution.

GC測定・・・J&W社製キャピラリーカラムDB−5を用いて、島津製GC-2010シリーズで測定した。   GC measurement: Measured with GC-2010 series manufactured by Shimadzu using capillary column DB-5 manufactured by J & W.

合成例1
4−メトキシベンジルトリメトキシシランの合成例
撹拌機、還流冷却器、滴下ろう斗及び温度計を備えた500mL4つ口フラスコに、マグネシウム19.0g(0.784モル)とテトラヒドロフラン300mLを加えヨウ素辺を加えた。そこに少量の4−メトキシベンジルクロライドを滴下し反応を開始させた後、4−メトキシベンジルクロライド合計116.9g(0.746モル)を5〜10℃で滴下してグリニャール試薬を調整した。
Synthesis example 1
Synthesis example of 4-methoxybenzyltrimethoxysilane To a 500 mL four-necked flask equipped with a stirrer, reflux condenser, dropping funnel and thermometer, 19.0 g (0.784 mol) of magnesium and 300 mL of tetrahydrofuran were added, and the iodine side was adjusted. added. A small amount of 4-methoxybenzyl chloride was added dropwise thereto to start the reaction, and then a total of 116.9 g (0.746 mol) of 4-methoxybenzyl chloride was added dropwise at 5 to 10 ° C. to prepare a Grignard reagent.

次に撹拌機、還流冷却器、滴下ろう斗及び温度計を備えた1000mL4つ口フラスコに正珪酸メチル568g(3.73モル)仕込み、70〜80℃の温度で先に調整したグリニャール試薬を2時間かけて滴下した。その後冷却し析出したマグネシウム塩をろ過した後、溶媒を留去し、さらに減圧度5mmHgで128〜135℃の留分を122g(0.495モル)回収した。得られた留分のGC分析結果、GC純度98.8%、NMRとIR分析の結果、4−メトキシベンジルトリメトキシシランであった。   Next, 568 g (3.73 mol) of normal methyl silicate was charged into a 1000 mL four-necked flask equipped with a stirrer, a reflux condenser, a dropping funnel, and a thermometer, and 2 Grignard reagents previously adjusted at a temperature of 70 to 80 ° C. It was added dropwise over time. After cooling and filtering the precipitated magnesium salt, the solvent was distilled off, and 122 g (0.495 mol) of a 128-135 ° C. fraction was recovered at a reduced pressure of 5 mmHg. As a result of GC analysis of the obtained fraction, GC purity was 98.8%, and NMR and IR analysis revealed that it was 4-methoxybenzyltrimethoxysilane.

得られた化合物のスペクトルデータを下記に示す。   The spectrum data of the obtained compound is shown below.

赤外線吸収スペクトル(IR)データ
2839,2941cm-1(-CH3,Ar)、1080cm-1(Si-O)
核磁気共鳴スペクトル(NMR)データ(1H-NMR溶媒:CDCl3
2.15ppm(s、2H、-CH2-)、3.52ppm(s、9H、-OCH3)、3.76ppm(s、3H、CH3-O-)、6.78-6.80ppm(d、J=8.5Hz、2H、Ar-H)、7.07-7.09ppm(d、J=8.5Hz、2H、Ar-H)。
Infrared absorption spectrum (IR) data
2839,2941cm -1 (-CH3, Ar), 1080cm -1 (Si-O)
Nuclear magnetic resonance spectrum (NMR) data (1H-NMR solvent: CDCl 3 )
2.15ppm (s, 2H, -CH 2 -), 3.52ppm (s, 9H, -OCH3), 3.76ppm (s, 3H, CH 3 -O -), 6.78-6.80ppm (d, J = 8.5Hz, 2H, Ar-H), 7.07-7.09 ppm (d, J = 8.5 Hz, 2H, Ar-H).

実施例1
4−メトキシベンジルシルセスキオキサンの合成
Example 1
Synthesis of 4-methoxybenzylsilsesquioxane

Figure 2015180739
Figure 2015180739

撹拌機、還流冷却器、滴下ろう斗及び温度計を備えた500mL4つ口フラスコに、25%テトラメチルアンモニウムヒドロキシド水溶液2.6gと水9.4gを仕込み、2−プロパノール60mLとトルエン30mLを加えた。そこに4−メトキシベンジルトリメトキシシラン59.2g(0.244モル)のトルエン30mL溶液を滴下ロートに入れ撹拌しながら35〜45℃の温度で滴下した。滴下終了後2時間熟成し、室温に冷却後トルエン90mLと水90mLを加え抽出した。分液ロートに入れ水層を排出後、次に希酢酸水溶液で洗浄し、水層を排出後続けて水で4回洗浄を行った。その後油層を0.5μmのPTFEフィルターでろ過後トルエンを留去して4−メトキシベンジルシルセスキオキサン46.8g得た。   A 500 mL four-necked flask equipped with a stirrer, reflux condenser, dropping funnel and thermometer was charged with 2.6 g of 25% tetramethylammonium hydroxide aqueous solution and 9.4 g of water, and 60 mL of 2-propanol and 30 mL of toluene were added. It was. Thereto, a 30 mL solution of 4-methoxybenzyltrimethoxysilane in 59.2 g (0.244 mol) in toluene was placed in a dropping funnel and added dropwise at a temperature of 35 to 45 ° C. with stirring. After completion of the dropwise addition, the mixture was aged for 2 hours, cooled to room temperature, and extracted with 90 mL of toluene and 90 mL of water. After putting into the separatory funnel and discharging the aqueous layer, it was washed with dilute acetic acid aqueous solution, and after discharging the aqueous layer, it was washed with water four times. Thereafter, the oil layer was filtered with a 0.5 μm PTFE filter, and then toluene was distilled off to obtain 46.8 g of 4-methoxybenzylsilsesquioxane.

得られた共重合体のスペクトルデータを下記に示す。   The spectrum data of the obtained copolymer is shown below.

赤外線吸収スペクトル(IR)データ
1038-1296cm-1(Si-O)、2833-3030cm-1(C-H)、3410 cm-1(Si-OH)
核磁気共鳴スペクトル(NMR)データ(1H-NMR δ(ppm)、溶媒:CDCl3
1.78(bs、2H、-CH2-)、3.68(bs、3H、CH3-O-)、6.72 (bs、4H、Ar-H)
GPC分析データ:Mw=2,320、Mn=2,050、Mw/Mn=1.13(ポリスチレン換算)。
Infrared absorption spectrum (IR) data
1038-1296cm -1 (Si-O), 2833-3030cm -1 (CH), 3410 cm -1 (Si-OH)
Nuclear magnetic resonance spectrum (NMR) data (1H-NMR δ (ppm), solvent: CDCl 3 )
1.78 (bs, 2H, -CH 2- ), 3.68 (bs, 3H, CH 3 -O-), 6.72 (bs, 4H, Ar-H)
GPC analysis data: Mw = 2,320, Mn = 2,050, Mw / Mn = 1.13 (polystyrene conversion).

比較例1
4−メトキシベンジルシルセスキオキサン重合物の合成
Comparative Example 1
Synthesis of 4-methoxybenzylsilsesquioxane polymer

Figure 2015180739
Figure 2015180739

撹拌機、還流冷却器、滴下ろう斗及び温度計を備えた500mL4つ口フラスコに、35%塩酸水溶液3.3gと水120gを仕込み撹拌を開始した。また、4−メトキシベンジルトリメトキシシラン78.5g(0.324モル)のトルエン120mL溶液を15〜20℃で滴下した。その後15〜20℃の温度でそのまま2時間熟成し、トルエンを加えて抽出し、水層を除去後、炭酸水素ナトリウム水溶液、希酢酸水溶液、水で4回洗浄後、油層を濃縮して4−メトキシベンジルシルセスキオキサン縮重合物57.5gを得た。   A 500 mL four-necked flask equipped with a stirrer, a reflux condenser, a dropping funnel and a thermometer was charged with 3.3 g of 35% aqueous hydrochloric acid and 120 g of water, and stirring was started. Moreover, the toluene 120mL solution of 4-methoxybenzyltrimethoxysilane 78.5g (0.324 mol) was dripped at 15-20 degreeC. Thereafter, the mixture was aged for 2 hours at a temperature of 15 to 20 ° C., extracted by adding toluene, removed the aqueous layer, washed 4 times with an aqueous sodium hydrogen carbonate solution, dilute acetic acid aqueous solution and water, concentrated the oil layer to 4- 57.5 g of a methoxybenzylsilsesquioxane condensation polymer was obtained.

得られた共重合体のスペクトルデータを下記に示す。   The spectrum data of the obtained copolymer is shown below.

赤外線吸収スペクトル(IR)データ
1036-1246cm-1(Si-O)、2951-3071cm-1(C-H)、3165-3603cm-1(Si-OH)
核磁気共鳴スペクトル(NMR)データ(1H-NMR δ(ppm)、溶媒:CDCl3
1.83(bs、2H、-CH2-)、3.68(bs、3H、CH3-O-)、6.69(bs、4H、Ar-H)
GPC分析データ:Mw=2,530、Mn=1,610、Mw/Mn=1.57(ポリスチレン換算)。
Infrared absorption spectrum (IR) data
1036-1246cm -1 (Si-O), 2951-3071cm -1 (CH), 3165-3603cm -1 (Si-OH)
Nuclear magnetic resonance spectrum (NMR) data (1H-NMR δ (ppm), solvent: CDCl 3 )
1.83 (bs, 2H, -CH 2 -), 3.68 (bs, 3H, CH 3 -O -), 6.69 (bs, 4H, Ar-H)
GPC analysis data: Mw = 2,530, Mn = 1,610, Mw / Mn = 1.57 (polystyrene conversion).

比較例2
フェニルシルセスキオキサン・メチルシルセスキオキサン共重合体の合成
Comparative Example 2
Synthesis of phenylsilsesquioxane / methylsilsesquioxane copolymer

Figure 2015180739
Figure 2015180739

(70:30の仕込みモル組成比を示す)
(構造式中の50:50は使用原料のモル比)
撹拌機、還流冷却器、滴下ろう斗及び温度計を備えた500mL4つ口フラスコに、トルエン50.6gと水33.4gを仕込み、35%塩酸を3.13g(0.03モル)を加えた。次にフェニルトリメトキシシラン41.9g(0.211モル)、メチルトリメトキシシラン12.5g(0.091モル)のトルエン25.3gの溶液を15〜20℃で滴下した。滴下終了後、同温度で2時間熟成させた。このときの反応溶液をGCで分析した結果、原料は残っていないことが分かった。次にトルエンと水を加えて抽出し、炭酸水素ナトリウム水溶液で洗浄後に、水で溶液が中性になるまで洗浄した。トルエン油層を回収し、トルエンを除去して、目的の白色固体状の化合物27.2gを得た。
(Indicates a charged molar composition ratio of 70:30)
(50:50 in the structural formula is the molar ratio of the raw materials used)
A 500 mL four-necked flask equipped with a stirrer, a reflux condenser, a dropping funnel, and a thermometer was charged with 50.6 g of toluene and 33.4 g of water, and 3.13 g (0.03 mol) of 35% hydrochloric acid was added. . Next, a solution of 45.3 g (0.211 mol) of phenyltrimethoxysilane and 25.3 g of toluene of 12.5 g (0.091 mol) of methyltrimethoxysilane was added dropwise at 15 to 20 ° C. After completion of dropping, the mixture was aged at the same temperature for 2 hours. As a result of analyzing the reaction solution at this time by GC, it was found that no raw material remained. Next, toluene and water were added for extraction, and after washing with an aqueous sodium hydrogen carbonate solution, the solution was washed with water until the solution became neutral. The toluene oil layer was recovered, and toluene was removed to obtain 27.2 g of the target white solid compound.

得られた共重合体のスペクトルデータを下記に示す。   The spectrum data of the obtained copolymer is shown below.

赤外線吸収スペクトル(IR)データ
1028-1132cm-1(Si-O)、2970-3070cm-1(C-H)、3070-3700cm-1(Si-OH)
核磁気共鳴スペクトル(NMR)データ(1H-NMR δ(ppm)、溶媒:CDCl3
0.16(bs)、7.00-7.57(m)、7.57-7.90(m)
GPC分析データ:Mw=960、Mw/Mn=1.25(ポリスチレン換算)。
Infrared absorption spectrum (IR) data
1028-1132cm -1 (Si-O), 2970-3070cm -1 (CH), 3070-3700cm -1 (Si-OH)
Nuclear magnetic resonance spectrum (NMR) data (1H-NMR δ (ppm), solvent: CDCl 3 )
0.16 (bs), 7.00-7.57 (m), 7.57-7.90 (m)
GPC analysis data: Mw = 960, Mw / Mn = 1.25 (polystyrene conversion).

<合成材料の評価>
実施例1、及び、比較例1、2のIR測定を実施した。また製造されたシリコーン重合体を、それぞれをプロピレングリコールモノメチルエーテルアセテートに溶解させ、固形分濃度が40重量%になるように調整した溶液を得た。その後、当該溶液をPTFE(ポリテトラフルオロエチレン)製のフィルタで濾過し、シリコンウエハまたはガラス基板上に、溶媒除去した後の膜厚が2.0μmになるような回転数で30秒間回転塗布した。その後100℃/30秒かけて溶媒除去し、電気炉で750℃/1時間かけて被膜を最終焼成し絶縁被膜とした。
<Evaluation of synthetic materials>
The IR measurement of Example 1 and Comparative Examples 1 and 2 was performed. In addition, each of the produced silicone polymers was dissolved in propylene glycol monomethyl ether acetate to obtain a solution in which the solid content concentration was adjusted to 40% by weight. Thereafter, the solution is filtered through a PTFE (polytetrafluoroethylene) filter, and spin-coated for 30 seconds on a silicon wafer or glass substrate at a rotational speed such that the film thickness after removal of the solvent is 2.0 μm. . Thereafter, the solvent was removed over 100 ° C./30 seconds, and the film was finally baked in an electric furnace over 750 ° C./1 hour to obtain an insulating film.

[シラノール基の大小判断]
それぞれのIR測定の結果、3500cm-1付近の吸収が大きいものをシラノール多いものとし、吸収が小さいものをシラノール少ないものとした。
[Judgment of silanol group size]
As a result of each IR measurement, a large absorption near 3500 cm −1 was regarded as having a large amount of silanol, and a small absorption was regarded as having a low silanol.

[加熱硬化膜特性]
上記成膜方法により成膜された被膜に対して、シリコンウェハー上の膜厚を測定し、クラックの有無を確認しクラックが発生したものが×、クラック発生無しのものが○と判定した。
[Heat-cured film properties]
The film thickness on the silicon wafer was measured with respect to the film formed by the above film forming method, and the presence or absence of cracks was confirmed.

<評価結果>
硬化膜の評価結果およびそれに基づく総合評価を下記の表1に示す。
<Evaluation results>
The evaluation results of the cured film and the overall evaluation based thereon are shown in Table 1 below.

Figure 2015180739
Figure 2015180739

このように、塩基性条件で合成したシリコーン重合体は、IR測定によるシラノールの量は少なく、500℃以上の加熱で形成した硬化膜でクラックの発生がなく、優れた加熱膜を形成することができる。よって、本発明のシリコーン共重合体は、電子材料分野に限らず、塗料や接着剤等、幅広い分野で応用できる。   As described above, the silicone polymer synthesized under basic conditions has a small amount of silanol by IR measurement, and a cured film formed by heating at 500 ° C. or higher is free from cracks and can form an excellent heating film. it can. Therefore, the silicone copolymer of the present invention can be applied not only in the field of electronic materials but also in a wide range of fields such as paints and adhesives.

Claims (4)

下記式
Figure 2015180739
で示されるケイ素化合物を、塩基性触媒の存在下、非プロトン性溶媒とアルコール溶媒を混合した溶媒中、または、ケトン系溶媒とアルコール溶媒を混合した溶媒中で加水分解し、さらに縮重合反応して下記式
Figure 2015180739
で示される構成単位を有するシリコーン重合体を製造するシリコーン重合体の製造方法であって、塩基性触媒が、テトラブチルアンモニウムヒドロキシド、テトラエチルアンモニウムヒドロキシド、または、テトラメチルアンモニウムヒドロキシドであるシリコーン重合体の製造方法。
Following formula
Figure 2015180739
Is hydrolyzed in the presence of a basic catalyst in a mixture of an aprotic solvent and an alcohol solvent or in a mixture of a ketone solvent and an alcohol solvent, followed by a condensation polymerization reaction. The following formula
Figure 2015180739
A silicone polymer production method for producing a silicone polymer having a structural unit represented by formula (1), wherein the basic catalyst is tetrabutylammonium hydroxide, tetraethylammonium hydroxide, or tetramethylammonium hydroxide. Manufacturing method of coalescence.
塩基性触媒がテトラメチルアンモニウムヒドロキシドである請求項1に記載のシリコーン重合体の製造方法。 2. The method for producing a silicone polymer according to claim 1, wherein the basic catalyst is tetramethylammonium hydroxide. 非プロトン性溶媒が、トルエンである請求項1又は請求項2に記載のシリコーン重合体の製造方法。 3. The method for producing a silicone polymer according to claim 1, wherein the aprotic solvent is toluene. ケトン系溶媒が、メチルイソブチルケトンである請求項1又は請求項2に記載のシリコーン重合体の製造方法。 The method for producing a silicone polymer according to claim 1 or 2, wherein the ketone solvent is methyl isobutyl ketone.
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