JP2015165564A - 窒化膜の製造方法及び窒化膜の圧縮応力の制御方法 - Google Patents
窒化膜の製造方法及び窒化膜の圧縮応力の制御方法 Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 182
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 114
- 238000000034 method Methods 0.000 title claims abstract description 86
- 239000007789 gas Substances 0.000 claims abstract description 326
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 139
- 238000010926 purge Methods 0.000 claims abstract description 139
- 239000000758 substrate Substances 0.000 claims abstract description 122
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 110
- 239000012495 reaction gas Substances 0.000 claims abstract description 41
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims abstract description 9
- 239000011261 inert gas Substances 0.000 claims description 64
- 238000005086 pumping Methods 0.000 claims description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 239000001307 helium Substances 0.000 claims description 9
- 229910052734 helium Inorganic materials 0.000 claims description 9
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 9
- 229910052743 krypton Inorganic materials 0.000 claims description 9
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052754 neon Inorganic materials 0.000 claims description 9
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 9
- 229910052704 radon Inorganic materials 0.000 claims description 9
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims description 9
- 229910052724 xenon Inorganic materials 0.000 claims description 9
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 230000001105 regulatory effect Effects 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 3
- 238000005121 nitriding Methods 0.000 claims 2
- 238000000231 atomic layer deposition Methods 0.000 abstract description 18
- 239000010408 film Substances 0.000 description 170
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 24
- 229910021529 ammonia Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 238000007740 vapor deposition Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 2
- GIRKRMUMWJFNRI-UHFFFAOYSA-N tris(dimethylamino)silicon Chemical compound CN(C)[Si](N(C)C)N(C)C GIRKRMUMWJFNRI-UHFFFAOYSA-N 0.000 description 2
- DCERHCFNWRGHLK-UHFFFAOYSA-N C[Si](C)C Chemical compound C[Si](C)C DCERHCFNWRGHLK-UHFFFAOYSA-N 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- VJDVOZLYDLHLSM-UHFFFAOYSA-N diethylazanide;titanium(4+) Chemical compound [Ti+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC VJDVOZLYDLHLSM-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- LNKYFCABELSPAN-UHFFFAOYSA-N ethyl(methyl)azanide;titanium(4+) Chemical compound [Ti+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C LNKYFCABELSPAN-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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Abstract
Description
Claims (20)
- 基板上にソースガスを提供して、前記基板上に前記ソースガスの少なくとも一部が吸着される第1段階と、
前記基板上に第1パージガスを提供する第2段階と、
前記基板上に窒素ガス(N2)を含む応力調節ガスと前記窒素ガス(N2)以外の窒素成分(N)を含有する反応ガスとをプラズマ状態で提供して、前記基板上に単位蒸着膜を形成する第3段階と、
前記基板上に第2パージガスを提供する第4段階と、
を含む単位サイクルを少なくとも1回以上行うことによって、前記基板上に圧縮応力を有する窒化膜を形成する窒化膜の製造方法。 - 前記窒化膜の要求される圧縮応力が大きいほど、前記第3段階から前記基板上に提供される前記窒素ガス(N2)の量を増やす請求項1に記載の窒化膜の製造方法。
- 前記応力調節ガスは、不活性ガス及び前記窒素ガス(N2)の混合ガスを含む請求項1に記載の窒化膜の製造方法。
- 前記第3段階で前記窒化膜の要求される圧縮応力が大きいほど、前記基板上に提供される前記不活性ガスに対する前記窒素ガス(N2)の相対的比率を高める請求項3に記載の窒化膜の製造方法。
- 前記不活性ガスは、ヘリウム(He)、ネオン(Ne)、アルゴン(Ar)、クリプトン(Kr)、キセノン(Xe)、及びラドン(Rn)のうち少なくとも何れか1つを含む請求項3に記載の窒化膜の製造方法。
- 前記プラズマは、ダイレクトプラズマ方式またはリモートプラズマ方式によって形成される請求項1に記載の窒化膜の製造方法。
- 前記第1パージガスまたは前記第2パージガスが、前記第1段階ないし前記第4段階から持続的に供給される請求項1に記載の窒化膜の製造方法。
- 前記第1パージガス及び前記第2パージガスのうち少なくとも何れか1つは、窒素ガス、不活性ガス、または窒素ガスと不活性ガスとからなる混合ガスである請求項1に記載の窒化膜の製造方法。
- 前記応力調節ガスは、前記第1パージガス及び前記第2パージガスのうち少なくとも何れか1つと同種の物質で構成されたガスである請求項1に記載の窒化膜の製造方法。
- 前記単位サイクルは、
前記単位蒸着膜の上に第2応力調節ガスをプラズマ状態で提供する第5段階と、
前記基板上に第3パージガスを提供する第6段階と、
を含む請求項1に記載の窒化膜の製造方法。 - 前記第2応力調節ガスは、窒素ガス(N2)を含むか、または、不活性ガス及び窒素ガス(N2)の混合ガスを含む請求項10に記載の窒化膜の製造方法。
- 前記第1パージガス、前記第2パージガスまたは前記第3パージガスが、前記第1段階ないし前記第6段階から持続的に供給される請求項10に記載の窒化膜の製造方法。
- 前記第1パージガス、前記第2パージガス、及び前記第3パージガスのうち少なくとも何れか1つは、窒素ガス、不活性ガス、または窒素ガスと不活性ガスとからなる混合ガスである請求項10に記載の窒化膜の製造方法。
- 前記第2応力調節ガスは、前記第1パージガス、前記第2パージガス、及び前記第3パージガスのうち少なくとも何れか1つと同種の物質で構成されたガスである請求項10に記載の窒化膜の製造方法。
- 前記単位サイクルは、
前記第1段階の後、前記第2段階の前に、前記ソースガスの提供を中断し、前記第1段階でよりも、チャンバ内圧力をさらに低く保持させる段階を含む請求項1に記載の窒化膜の製造方法。 - 前記第1段階でよりも、前記チャンバ内圧力をさらに低く保持させる段階は、前記ソースガスの提供を中断するが、チャンバ内のポンピングを行うことで具現される請求項15に記載の窒化膜の製造方法。
- 前記ポンピングは、前記単位サイクルの中で常時行われる請求項16に記載の窒化膜の製造方法。
- 前記単位サイクルは、
前記第3段階の後、前記第4段階の前に、前記応力調節ガス及び前記反応ガスの提供を中断し、前記第3段階でよりも、前記チャンバ内圧力をさらに低く保持させる段階を含む請求項15に記載の窒化膜の製造方法。 - 前記第3段階でよりも、前記チャンバ内圧力をさらに低く保持させる段階は、前記応力調節ガス及び前記反応ガスの提供を中断するが、前記チャンバ内のポンピングを行うことで具現される請求項18に記載の窒化膜の製造方法。
- 前記ポンピングは、前記単位サイクルの中で常時行われる請求項19に記載の窒化膜の製造方法。
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KR10-2015-0002730 | 2015-01-08 | ||
KR10-2015-0002731 | 2015-01-08 | ||
KR1020150002730A KR102202089B1 (ko) | 2015-01-08 | 2015-01-08 | 질화막의 제조방법 |
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US20150249004A1 (en) | 2015-09-03 |
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