JP2015149372A - ダイオード - Google Patents

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Publication number
JP2015149372A
JP2015149372A JP2014020942A JP2014020942A JP2015149372A JP 2015149372 A JP2015149372 A JP 2015149372A JP 2014020942 A JP2014020942 A JP 2014020942A JP 2014020942 A JP2014020942 A JP 2014020942A JP 2015149372 A JP2015149372 A JP 2015149372A
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JP
Japan
Prior art keywords
diode
voltage
current
blocking
product
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014020942A
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English (en)
Japanese (ja)
Inventor
木山　誠
Makoto Kiyama
誠 木山
松浦　尚
Takashi Matsuura
尚 松浦
嶋津　充
Mitsuru Shimazu
充 嶋津
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP2014020942A priority Critical patent/JP2015149372A/ja
Priority to CN201510065112.XA priority patent/CN104835858A/zh
Publication of JP2015149372A publication Critical patent/JP2015149372A/ja
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
JP2014020942A 2014-02-06 2014-02-06 ダイオード Pending JP2015149372A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014020942A JP2015149372A (ja) 2014-02-06 2014-02-06 ダイオード
CN201510065112.XA CN104835858A (zh) 2014-02-06 2015-02-06 二极管

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014020942A JP2015149372A (ja) 2014-02-06 2014-02-06 ダイオード

Publications (1)

Publication Number Publication Date
JP2015149372A true JP2015149372A (ja) 2015-08-20

Family

ID=53813612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014020942A Pending JP2015149372A (ja) 2014-02-06 2014-02-06 ダイオード

Country Status (2)

Country Link
JP (1) JP2015149372A (zh)
CN (1) CN104835858A (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261295A (ja) * 2001-03-05 2002-09-13 Shikusuon:Kk ショットキーダイオード、ｐｎ接合ダイオード、ｐｉｎ接合ダイオード、および製造方法
JP2006196775A (ja) * 2005-01-14 2006-07-27 Nippon Inter Electronics Corp Ｊｂｓおよびその製造方法ならびにショットキーバリアダイオード
JP2011079728A (ja) * 2009-09-14 2011-04-21 Sumitomo Electric Ind Ltd 窒化物半導体エピタキシャル層の形成方法および窒化物半導体デバイスの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261295A (ja) * 2001-03-05 2002-09-13 Shikusuon:Kk ショットキーダイオード、ｐｎ接合ダイオード、ｐｉｎ接合ダイオード、および製造方法
JP2006196775A (ja) * 2005-01-14 2006-07-27 Nippon Inter Electronics Corp Ｊｂｓおよびその製造方法ならびにショットキーバリアダイオード
JP2011079728A (ja) * 2009-09-14 2011-04-21 Sumitomo Electric Ind Ltd 窒化物半導体エピタキシャル層の形成方法および窒化物半導体デバイスの製造方法

Also Published As

Publication number Publication date
CN104835858A (zh) 2015-08-12

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