JP2015073271A5 - - Google Patents
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- Publication number
- JP2015073271A5 JP2015073271A5 JP2014202936A JP2014202936A JP2015073271A5 JP 2015073271 A5 JP2015073271 A5 JP 2015073271A5 JP 2014202936 A JP2014202936 A JP 2014202936A JP 2014202936 A JP2014202936 A JP 2014202936A JP 2015073271 A5 JP2015073271 A5 JP 2015073271A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- reflector
- baw
- electrode
- wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 8
- 235000012239 silicon dioxide Nutrition 0.000 claims 4
- 239000000377 silicon dioxide Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/044,782 | 2013-10-02 | ||
| US14/044,782 US9219517B2 (en) | 2013-10-02 | 2013-10-02 | Temperature compensated bulk acoustic wave devices using over-moded acoustic reflector layers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015073271A JP2015073271A (ja) | 2015-04-16 |
| JP2015073271A5 true JP2015073271A5 (enExample) | 2017-11-09 |
Family
ID=52740633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014202936A Pending JP2015073271A (ja) | 2013-10-02 | 2014-10-01 | オーバーモード音響反射体層を用いた温度補償型バルク弾性波デバイス |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9219517B2 (enExample) |
| JP (1) | JP2015073271A (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8601655B2 (en) * | 2007-08-14 | 2013-12-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Process of making a bulk acoustic wave structure with an aluminum copper nitride piezoelectric layer |
| US9735755B2 (en) * | 2015-08-20 | 2017-08-15 | Qorvo Us, Inc. | BAW resonator having lateral energy confinement and methods of fabrication thereof |
| CN108463720B (zh) * | 2015-10-21 | 2021-03-23 | Qorvo美国公司 | 具有声学振动的剪切模式和纵向模式的增强反射的谐振器结构 |
| JP6572812B2 (ja) * | 2016-03-23 | 2019-09-11 | 横浜ゴム株式会社 | 音響透過性部材 |
| GB2600838A (en) | 2016-10-20 | 2022-05-11 | Skyworks Solutions Inc | Elastic wave device with sub-wavelength thick piezoelectric layer |
| US11223342B2 (en) | 2016-12-07 | 2022-01-11 | Qorvo Us, Inc. | Bulk acoustic wave sensor having an overmoded resonating structure |
| EP3556014B1 (en) | 2017-01-05 | 2021-03-10 | Huawei Technologies Co., Ltd. | Bragg mirror, resonator and filter device |
| DE102018108608B3 (de) * | 2018-04-11 | 2019-08-29 | RF360 Europe GmbH | BAW-Resonator mit verbesserter Leistungsbeständigkeit und Wärmeresistenz und BAW-Resonator umfassendes HF-Filter |
| DE102018117248B4 (de) * | 2018-07-17 | 2020-03-19 | RF360 Europe GmbH | BAW-Resonator mit einem hohen Q-Wert und Störmodenunterdrückung |
| US11362638B2 (en) * | 2020-08-19 | 2022-06-14 | RF360 Europe GmbH | Bulk acoustic wave resonator with a heatsink region and electrical insulator region |
| CN112953447B (zh) | 2021-02-09 | 2023-08-11 | 偲百创(深圳)科技有限公司 | 谐振器及电子设备 |
| KR102743931B1 (ko) * | 2023-05-24 | 2024-12-17 | 서울대학교산학협력단 | 탄성파의 전방위 단일모드 반사체 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6107721A (en) | 1999-07-27 | 2000-08-22 | Tfr Technologies, Inc. | Piezoelectric resonators on a differentially offset reflector |
| US6420820B1 (en) | 2000-08-31 | 2002-07-16 | Agilent Technologies, Inc. | Acoustic wave resonator and method of operating the same to maintain resonance when subjected to temperature variations |
| DE10262056B4 (de) | 2002-11-07 | 2008-08-28 | Infineon Technologies Ag | BAW-Resonator mit akustischem Reflektor und Filterschaltung |
| JP4339604B2 (ja) * | 2003-01-29 | 2009-10-07 | 京セラキンセキ株式会社 | 圧電薄膜素子 |
| US7400217B2 (en) | 2003-10-30 | 2008-07-15 | Avago Technologies Wireless Ip Pte Ltd | Decoupled stacked bulk acoustic resonator band-pass filter with controllable pass bandwith |
| DE602004013534D1 (de) | 2004-03-09 | 2008-06-19 | Infineon Technologies Ag | Akustischer Volumenwellen - Filter und Verfahren zur Vermeidung unerwünschter Seitendurchgänge |
| DE102004035812A1 (de) * | 2004-07-23 | 2006-03-16 | Epcos Ag | Mit akustischen Volumenwellen arbeitender Resonator |
| DE102004062312B3 (de) | 2004-12-23 | 2006-06-01 | Infineon Technologies Ag | Piezoelektrischer Resonator mit verbesserter Temperaturkompensation und Verfahren zum Herstellen desselben |
| DE102005061344A1 (de) * | 2005-12-21 | 2007-06-28 | Epcos Ag | Mit akustischen Volumenwellen arbeitender Resonator |
| US7684109B2 (en) * | 2007-02-28 | 2010-03-23 | Maxim Integrated Products, Inc. | Bragg mirror optimized for shear waves |
| FR2951024B1 (fr) * | 2009-10-01 | 2012-03-23 | St Microelectronics Sa | Procede de fabrication de resonateur baw a facteur de qualite eleve |
| FR2951026B1 (fr) * | 2009-10-01 | 2011-12-02 | St Microelectronics Sa | Procede de fabrication de resonateurs baw sur une tranche semiconductrice |
| US8253513B2 (en) | 2010-03-16 | 2012-08-28 | Hao Zhang | Temperature compensated thin film acoustic wave resonator |
| US8923794B2 (en) * | 2011-11-02 | 2014-12-30 | Triquint Semiconductor, Inc. | Temperature compensation of acoustic resonators in the electrical domain |
-
2013
- 2013-10-02 US US14/044,782 patent/US9219517B2/en active Active
-
2014
- 2014-10-01 JP JP2014202936A patent/JP2015073271A/ja active Pending
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