JP2015070026A - Semiconductor device and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable manufacturing of a semiconductor device having high adhesion.SOLUTION: A semiconductor device manufacturing method comprises the steps of: (i) laminating a first layer formed by at least one of a group consisting of titanium, titanium nitride and vanadium so as to cover a part of a semiconductor layer; (ii) laminating an aluminum layer consisting primarily of aluminum on the side opposite to the semiconductor layer across the first layer; (iii) oxidizing the aluminum layer; (iv) laminating a titanium layer formed by titanium on the side opposite to the aluminum layer across the first layer; (v)laminating a titanium nitride layer formed by titanium nitride on the side opposite to the aluminum layer across the titanium layer; and (vi) laminating an electrode layer on the side opposite to the titanium layer across the titanium nitride layer.

Description

  The present invention relates to a semiconductor device.

  2. Description of the Related Art Conventionally, a semiconductor device has a structure in which an aluminum (Al) layer and a barrier metal layer are sequentially stacked on a semiconductor substrate, and gold (Au) is stacked as an electrode layer on the barrier metal layer. (For example, Patent Document 1). In the technique described in Patent Document 1, each layer is formed by sputtering.

JP 2006-173386 A

  However, when a layer is formed by a sputtering apparatus, there is a problem that a manufactured semiconductor device may be damaged by plasma. On the other hand, when forming a layer with a vapor deposition apparatus, there exists a subject that control of a component ratio is difficult when forming a layer with compounds, such as titanium nitride.

  Moreover, when moving from a vapor deposition apparatus to a sputtering apparatus in an oxygen atmosphere, there exists a subject that layers, such as a metal layer, oxidize and the adhesiveness of each layer falls. On the other hand, when layers are formed by combining a sputtering apparatus and a vapor deposition apparatus, and all layers are formed in a non-oxygen atmosphere, there is a problem that manufacturing costs increase. In addition, in the conventional semiconductor device, it has been desired to reduce the resistance, reduce the size, save resources, facilitate the manufacturing, improve the manufacturing accuracy, and improve the workability.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms.

(1) According to an aspect of the present invention, a method for manufacturing a semiconductor device is provided. In this method of manufacturing a semiconductor device, (i) a first layer formed of at least one of the group consisting of titanium (Ti), titanium nitride (TiN), and vanadium (V) so as to cover at least a part of the semiconductor layer. A step of laminating layers; (ii) a step of laminating an aluminum layer containing aluminum as a main component on the side opposite to the semiconductor layer with respect to the first layer; and (iii) oxidizing the aluminum layer. And (iv) laminating a titanium layer formed of titanium on the side opposite to the first layer with respect to the aluminum layer; and (v) the aluminum layer with respect to the titanium layer. A step of laminating a titanium nitride layer formed of titanium nitride on the opposite side, and (vi) a step of laminating an electrode layer on the opposite side of the titanium nitride layer from the titanium layer. According to the semiconductor device manufacturing method of this embodiment, a semiconductor device with high adhesion can be manufactured.

(2) In the method of manufacturing a semiconductor device according to the above aspect, the step (ii) is performed by a first device, the step (v) is performed by a second device different from the first device, Step (iii) may occur when the semiconductor device is moved from the first device to the second device. According to the method for manufacturing a semiconductor device of this aspect, the semiconductor device can be moved from the first device to the second device in an oxygen atmosphere.

(3) In the method for manufacturing a semiconductor device according to the above aspect, the first device may be a vapor deposition device, and the second device may be a sputtering device. According to the semiconductor device manufacturing method of this embodiment, the occurrence of plasma damage can be suppressed.

(4) In the method of manufacturing a semiconductor device according to the above aspect, the semiconductor layer is formed of a group III nitride n-type semiconductor,
The electrode layer may be formed of at least one member selected from the group consisting of gold, silver (Ag), and copper (Cu). According to the method for manufacturing a semiconductor device of this embodiment, a semiconductor device with good ohmic contact can be obtained.

  A plurality of constituent elements of each aspect of the present invention described above are not indispensable, and some or all of the effects described in the present specification are to be solved to solve part or all of the above-described problems. In order to achieve the above, it is possible to appropriately change, delete, replace with another new component, and partially delete the limited contents of some of the plurality of components. In order to solve part or all of the above-described problems or to achieve part or all of the effects described in this specification, technical features included in one embodiment of the present invention described above. A part or all of the technical features included in the other aspects of the present invention described above may be combined to form an independent form of the present invention.

  The present invention can also be realized in various forms other than the semiconductor device manufacturing method. For example, it is realizable with forms, such as a semiconductor device and a power converter provided with a semiconductor device.

  According to the present invention, a semiconductor device with high adhesion can be manufactured.

FIG. 3 is a cross-sectional view schematically showing the configuration of the semiconductor device 100 according to the first embodiment. 3 is a flowchart showing a method for manufacturing the semiconductor device 100 according to the first embodiment. The figure which shows the structure of the prototype example used in order to evaluate the performance of the semiconductor device of this embodiment. Results of micro scratch test for each prototype. The image which image | photographed each layer of the prototype 2 with TEM (Transmission Electron Microscope). The image which image | photographed each layer of the prototype example 3 with TEM.

A. First embodiment:
A1. Configuration of the semiconductor device 100:
FIG. 1 is a cross-sectional view schematically showing the configuration of the semiconductor device 100 according to the first embodiment. FIG. 1 shows a part of a cross section of the semiconductor device 100 according to the present embodiment. FIG. 1 is a diagram for clearly showing the technical features of the semiconductor device 100, and does not accurately indicate the thickness of each layer. FIG. 1 also shows XYZ axes orthogonal to each other for ease of explanation. The same applies to the subsequent figures. In this specification, the layer thickness refers to a dimension in the X-axis direction.

  The semiconductor device 100 in this embodiment is an SBD (Schottky Barrier Diode). The semiconductor device 100 includes a semiconductor layer 10, a first layer 20, an aluminum layer 30, a titanium layer 40, a titanium nitride layer 50, and an electrode layer 60.

  The semiconductor layer 10 is formed of a group III nitride n-type semiconductor. “Group III nitride” refers to a group III-V compound using nitrogen as a group V element. Examples of the group III nitride include aluminum nitride, gallium nitride, and indium nitride. In the case of group III nitride, “n-type semiconductor” refers to a semiconductor to which silicon (Si), germanium (Ge), or the like is added as a donor impurity. In this embodiment, gallium nitride (GaN) is used as the semiconductor. In the present specification, the semiconductor layer 10 is also referred to as a semiconductor substrate 10.

  Compared with other semiconductors, gallium nitride has (i) a high thermal conductivity and excellent heat dissipation, (ii) a high temperature operation point, (iii) a high electron saturation rate, (Iv) It is preferable in that the dielectric breakdown voltage is high.

  The first layer 20 is formed so as to cover one surface of the semiconductor layer 10. In the present embodiment, the first layer 20 is a layer mainly composed of titanium. In the present embodiment, the thickness of the first layer 20 is 17.5 nm. Hereinafter, the “first layer 20” is also referred to as a “titanium layer 20”. As the first layer 20, titanium nitride (TiN) or vanadium (V) may be used instead of titanium. As will be described in detail later, in the present embodiment, the first layer 20 is formed by a vapor deposition apparatus. When titanium nitride is used for the first layer 20, it is difficult to control the composition ratio of nitrogen and titanium. Therefore, the first layer 20 is preferably made of titanium or vanadium.

  The aluminum layer 30 is formed on the opposite side (−X axis direction side) to the semiconductor layer 10 with respect to the first layer 20. The aluminum layer 30 is a layer mainly composed of aluminum. In the present embodiment, the aluminum layer 30 is a single layer made of only aluminum and has a thickness of 200 nm. The aluminum layer may be a compound (alloy) containing 90% or more of aluminum, and such a compound can provide the same effect as a single aluminum layer. Examples of the compound (alloy) include Al—Si and Al—Cu.

  The titanium layer 40 is formed on the side opposite to the first layer 20 (−X axis direction side) with respect to the aluminum layer 30. The titanium layer 40 is a layer mainly composed of titanium. In the present embodiment, the thickness of the titanium layer 40 is 10 nm.

  The titanium nitride layer 50 is formed on the opposite side (−X axis direction side) of the aluminum layer 30 with respect to the titanium layer 40. The titanium nitride layer 50 is a layer mainly composed of titanium nitride. In the present embodiment, the thickness of the titanium nitride layer 50 is 100 nm.

  The electrode layer 60 is formed on the opposite side to the titanium layer 40 (−X axis direction side) with respect to the titanium nitride layer 50. The electrode layer 60 is a layer mainly composed of silver (Ag). In the present embodiment, the thickness of the electrode layer 60 is 100 nm.

A2. Manufacturing method of semiconductor device 100:
FIG. 2 is a flowchart showing a method for manufacturing the semiconductor device 100 according to the first embodiment. In step S100, the semiconductor substrate 10 is prepared. The surface on which the first layer 20 of the semiconductor substrate 10 is formed is etched in advance. Etching includes dry etching and wet etching. In this embodiment, dry etching is used. By etching, the contact resistivity can be lowered. In addition, the semiconductor substrate 10 is processed in advance on the surface opposite to the surface on which the first layer 20 is formed (+ X-axis direction side).

  Processing performed in advance includes (i) formation of an uneven shape on the semiconductor substrate 10, (ii) formation of a source electrode, (iii) formation of an insulating film, (iv) dry etching, and (v) drain electrode. Forming, (vi) forming a gate electrode, and (vii) heat treatment.

Next, in step S110, the first layer 20 is stacked on the surface of the semiconductor substrate 10 that has not been processed (the −X-axis direction side) so as to cover at least a part of the semiconductor layer 10. In the present embodiment, the first layer 20 is formed by a vapor deposition apparatus, and an EB (Electron Beam) vapor deposition apparatus is used as the vapor deposition apparatus. Plasma damage can be avoided by using a vapor deposition apparatus. Note that plasma damage means that the crystal is partially damaged by plasma. Since the carriers are trapped in the broken part of the crystal due to the plasma damage, the contact resistance is increased.

  In step S <b> 120, an aluminum layer 30 containing aluminum as a main component is stacked on the opposite side of the first layer 20 from the semiconductor layer 10. That is, the aluminum layer 30 is formed on the surface of the first layer 20 (the surface on the −X axis direction side). An EB vapor deposition apparatus is also used for forming the aluminum layer 30.

  In step S130, the semiconductor device 100 is moved from the EB apparatus to the sputtering apparatus. At this time, the aluminum layer 30 of the semiconductor device 100 is oxidized. This oxidation occurs on at least a portion of the surface.

  In step S140, the titanium layer 40 made of titanium is laminated on the opposite side of the aluminum layer 30 from the first layer 20. That is, the titanium layer 40 is formed on the surface of the aluminum layer 30 (the surface on the −X axis direction side). The titanium layer 40 is formed by a sputtering apparatus. Specifically, first, argon is introduced into a non-oxygen atmosphere chamber, and then the semiconductor layer 10 is placed in the chamber. Next, argon (Ar) nuclei made into plasma are applied to the target. Thereafter, the target atoms hit by the argon atomic nuclei fly and adhere to the surface of the semiconductor substrate 10 opposite to the surface that has been previously processed (the −X direction side). Note that a target that releases titanium is used as the target. By using a sputtering apparatus, the entire surface opposite to the surface that has been previously processed (the −X direction side) can be uniformly formed in a short time. In addition, since conditions, such as RF (Radio Frequency) power at the time of sputtering, differ with apparatuses to be used, they are appropriately set to optimum conditions. “Non-oxygen atmosphere” refers to an atmosphere in which the partial pressure of oxygen is less than 1% of the partial pressure of oxygen in the atmosphere.

  In step S150, a titanium nitride layer 50 made of titanium nitride is stacked on the opposite side of the titanium layer 40 from the aluminum layer 30. That is, the titanium nitride layer 50 is formed on the surface of the titanium layer 40 (the surface on the −X axis direction side). The titanium layer 40 is formed by a sputtering apparatus. Note that a target that releases titanium is used as the target. Further, when performing sputtering, nitrogen gas is also introduced into the chamber together with argon. By performing sputtering under these conditions, the titanium nitride layer 50 can be formed on the surface of the aluminum layer 30 (the surface on the −X axis direction side).

  In step S <b> 160, the electrode layer 60 is stacked on the opposite side of the titanium nitride layer 50 from the titanium layer 40. That is, the electrode layer 60 is formed on the surface of the titanium nitride layer 50 (the surface on the −X axis direction side). Sputtering is also used for forming the electrode layer 60. Note that a target that releases silver is used as the target.

  In step S170, heat treatment is performed. The “heat treatment” in the present embodiment refers to a heat treatment for making the contact between the semiconductor layer 10 and the electrode layer 60 ohmic contact. In this embodiment, the heat treatment is performed at 400 degrees for 30 minutes. Through the above processing, the semiconductor device 100 according to the present embodiment is manufactured.

  According to the method for manufacturing a semiconductor device of this aspect, since the vapor deposition apparatus is used until step S120, the chance of receiving plasma damage can be reduced. For this reason, it can suppress that the contact resistance of the semiconductor device 100 becomes high. Further, since the titanium nitride layer 50 is formed by the sputtering apparatus, the composition can be easily controlled as compared with the case of forming by the vapor deposition apparatus.

In the present embodiment, each layer (20, 30, 40, 50) is deposited on the entire surface of the semiconductor substrate 10 on the side opposite to the surface that has been previously processed (the −X direction side). For this reason, since the electrode layer 60 can be deposited on this whole surface (surface on the −X direction side), the resistance between the electrodes can be lowered when the semiconductor device 100 is mounted on another device. In addition, adhesion when the semiconductor device 100 is mounted on another device can be improved.

B. Performance evaluation:
In general, it is not preferable to take out from non-oxygen conditions and place them under oxygen conditions before the formation of each layer is completed. This is because an oxide film is formed on the surface of the formed layer, and the adhesion with the layer formed thereon is lowered due to the oxide film. In the semiconductor device 100 of this embodiment, the adhesion performance was evaluated. As a method for evaluating adhesion, a micro scratch test method based on JIS R-3255 was adopted.

  FIG. 3 is a diagram showing a configuration of a prototype example used for evaluating the performance of the semiconductor device of the present embodiment. In the prototype, a silicon substrate was used as the semiconductor substrate, and silver (Ag) was used as the electrode. After the electrode layer was formed, heat treatment was performed at 400 ° C. for 30 minutes in all prototypes. In each prototype, each layer is laminated on a silicon substrate in the following order and thickness.

[Prototype Example 1]
Silicon substrate / titanium nitride layer (layer thickness: 35 nm) / aluminum layer (layer thickness: 300 nm) / titanium nitride layer (layer thickness: 50 nm) / titanium layer (layer thickness: 5 nm) / electrode layer 60 (layer thickness: 100 nm)

[Prototype Example 2]
Silicon substrate / titanium nitride layer (layer thickness: 35 nm) / aluminum layer (layer thickness: 300 nm) / titanium nitride layer (layer thickness: 50 nm) / titanium layer (layer thickness: 5 nm) / electrode layer 60 (layer thickness: 100 nm)

[Prototype Example 3]
Silicon substrate / titanium nitride layer (layer thickness: 35 nm) / aluminum layer (layer thickness: 300 nm) / titanium layer (layer thickness: 10 nm) / titanium nitride layer (layer thickness: 50 nm) / titanium layer (layer thickness: 5 nm) / Electrode layer 60 (layer thickness: 100 nm)

  In all prototypes, a metal layer was formed in a non-oxygen atmosphere by a sputtering apparatus. In Prototype Example 1, continuous film formation was performed in a non-oxygen atmosphere. On the other hand, in Prototype Example 2 and Prototype Example 3, after the aluminum layer was formed, the semiconductor device was exposed to an oxygen atmosphere, and then the subsequent film formation was performed. Prototype Example 3 differs from Prototype Example 1 and Prototype Example 2 in that the titanium layer is formed after the aluminum layer is formed and before the titanium nitride layer is formed. Except for the above two points, the prototype method of the prototype is the same.

  FIG. 4 shows the result of the micro scratch test of each prototype. The vertical axis represents sensor output, and the horizontal axis represents load (mN). The larger the load value at which the film starts to peel, the higher the adhesion. The upper diagram shows the results of prototype example 1, the middle diagram shows the results of prototype example 2, and the lower diagram shows the results of prototype example 3.

  From the results shown in FIG. 4, the prototype 2 began to peel off with a load of about 20 mN, whereas the prototype 1 and prototype 3 started to peel off with a load of about 25 mN. As a result, (i) the adhesion when the semiconductor device is exposed to an oxygen atmosphere during film formation is lower than the adhesion when the semiconductor device is continuously formed in a non-oxygen atmosphere, and (ii) the aluminum layer is formed. Thereafter, it is shown that the adhesion is improved by forming the titanium layer before forming the titanium nitride layer as compared with the case where the titanium layer is not formed.

  FIG. 5 is an image obtained by photographing each layer of Prototype Example 2 with a TEM (Transmission Electron Microscope). The lowest layer in the image is an aluminum (Al) layer, and a state in which a titanium nitride (TiN) layer, a titanium (Ti) layer, and an electrode (Ag) layer are stacked thereon is photographed. From this image, it can be seen that the thickness of the titanium nitride layer is about 23 nm, the thickness of the titanium layer is about 17 nm, and the thickness of the electrode layer is about 98 nm. From this image, it can be visually recognized that there is a film F between the aluminum layer and the titanium nitride layer. The film F is assumed to be a film in which aluminum is oxidized. The boundary of each layer except the film F is ambiguous, but the boundary of the film F is clear, so that it is assumed that this film shows low adhesion to other layers.

  FIG. 6 is an image obtained by photographing each layer of Prototype Example 3 with a TEM. The lowest layer in the image is an aluminum (Al) layer, and a state in which a titanium (Ti) layer, a titanium nitride (TiN) layer, a titanium (Ti) layer, and an electrode (Ag) layer are stacked thereon is photographed. ing. From this image, the thickness of the titanium layer in contact with the aluminum layer is about 10 nm, the thickness of the titanium nitride layer is about 40 nm, the thickness of the titanium layer is about 29 nm, and the thickness of the electrode layer is about 82 nm. It can be seen that it is. In FIG. 6, the thickness of the titanium nitride layer is about 40 nm from the measured values at two locations of 40 nm and 39 nm. Similarly, the thickness of the titanium layer in contact with the aluminum layer is found to be about 10 nm from the measured values at two locations of 12 nm and 9 nm.

  The film F presumed that the aluminum visible in FIG. 5 is oxidized cannot be seen in FIG. The reason why the film F cannot be visually recognized in Prototype Example 3 is presumed that by providing a titanium layer on the aluminum layer, the titanium and the aluminum oxide film reacted to become amorphous. On the other hand, it is presumed that the reason why the film F remains in the prototype example 2 is that the film F and titanium nitride do not react.

  From the above results, it can be seen that even when the aluminum layer is formed and then exposed to an oxygen atmosphere, the adhesion of each layer is improved by forming the titanium layer on the aluminum layer. In addition, since the semiconductor device 100 can be moved even in an oxygen atmosphere after the aluminum layer is formed, the first device that forms the aluminum layer and the second device that forms the titanium nitride layer are different devices. can do. For this reason, it is not necessary to provide equipment for forming all the layers in a non-oxygen atmosphere, and the manufacturing cost can be reduced.

  By using a vapor deposition device as the first device for forming the aluminum layer, the chance of plasma damage to the manufactured semiconductor device can be reduced. Moreover, the difficulty of controlling the component ratio can be overcome by using a sputtering apparatus as the second apparatus for forming the titanium nitride layer.

  Further, a good ohmic contact can be obtained by using a group III nitride n-type semiconductor device as the semiconductor and forming the electrode by at least one of the group consisting of gold, silver, and copper.

C. Variation:
The present invention is not limited to the above-described embodiment, and can be implemented in various forms without departing from the gist thereof. For example, the following modifications are possible.

C1. Modification 1:
In this embodiment, the semiconductor layer 10 is prepared in advance in step S100. However, the present invention is not limited to this. That is, the semiconductor substrate 10 may be formed immediately before step S110. Specifically, the semiconductor layer 10 can be formed by metal organic chemical vapor deposition (MOCVD).

C2. Modification 2:
In this embodiment, the metal layer is formed by a sputtering apparatus after being formed by a vapor deposition apparatus. However, the present invention is not limited to this. The metal layer can be formed using a vapor deposition apparatus, a sputtering apparatus, or a vapor deposition apparatus after the sputtering apparatus is used. Further, as a method for forming the metal layer, for example, a liquid phase film formation method or a chemical vapor phase method may be used. The vapor deposition method is suitable for uniform film formation.

C3. Modification 3:
In the present embodiment, the metal layer is disposed on the semiconductor layer 10 in the following order.
First layer 20 / aluminum layer 30 / titanium layer 40 / titanium nitride layer 50 / electrode layer 60
The respective layers are arranged in contact with each other. However, the present invention is not limited to this. As an arrangement of the metal layer, for example, a layer formed of a barrier metal may be laminated at least at one place between the layers except between the aluminum layer 30 and the titanium layer 40. In addition, other components such as impurities may be mixed in each layer.

C4. Modification 4:
In this embodiment, the heat treatment is performed at 400 degrees for 30 minutes. However, the present invention is not limited to this. In the case of performing the heat treatment, the temperature and time at which the contact between the semiconductor and the electrode is ohmic contact may be used, and may be, for example, 450 degrees 30 minutes or 500 degrees 5 minutes.

C5. Modification 5:
In this embodiment, the semiconductor device is an SBD. However, the present invention is not limited to this. As the semiconductor device, for example, a field effect transistor (FET) may be used.

C6. Modification 6:
In this embodiment, the semiconductor uses gallium nitride which is a group III nitride. However, the present invention is not limited to this. As the semiconductor, for example, a group III nitride such as aluminum nitride or indium nitride may be used, and silicon, gallium arsenide, silicon carbide, or the like may be used.

C7. Modification 7:
In the present embodiment, the semiconductor substrate 10 is used in which processing is performed in advance on the surface opposite to the surface on which the first layer 20 and the like are stacked. However, the present invention is not limited to this. After the electrode layer 60 and the like are formed on the semiconductor layer 10, the surface of the semiconductor layer 10 opposite to the electrode layer 60 may be processed.

C8. Modification 8:
In the present embodiment, each layer (20, 30, 40, 50, 60) is deposited on the entire surface of the semiconductor substrate 10 opposite to the surface on which processing is performed in advance (on the −X direction side). However, the present invention is not limited to this. Each layer (20, 30, 40, 50, 60) is deposited on a part of the surface, not the entire surface (−X direction side) opposite to the surface on which the processing process has been performed in advance on the semiconductor substrate 10. Also good.

C9. Modification 9:
In the present embodiment, the film thickness of each layer of the semiconductor device 100 is defined. However, the present invention is not limited to this. The film thickness of each layer of the semiconductor device 100 may be changed as appropriate.

  The present invention is not limited to the above-described embodiments and modifications, and can be realized with various configurations without departing from the spirit thereof. For example, the technical features in the embodiments and the modifications corresponding to the technical features in each embodiment described in the summary section of the invention are to solve some or all of the above-described problems, or In order to achieve part or all of the effects, replacement or combination can be performed as appropriate. Further, if the technical feature is not described as essential in the present specification, it can be deleted as appropriate.

DESCRIPTION OF SYMBOLS 10 ... Semiconductor layer 20 ... 1st layer 30 ... Aluminum layer 40 ... Titanium layer 50 ... Titanium nitride layer 60 ... Electrode layer 100 ... Semiconductor device

Claims (5)

A method for manufacturing a semiconductor device, comprising:
(I) a step of laminating a first layer formed of at least one of the group consisting of titanium, titanium nitride, and vanadium so as to cover at least a part of the semiconductor layer;
(Ii) laminating an aluminum layer containing aluminum as a main component on the opposite side of the first layer from the semiconductor layer;
(Iii) oxidizing the aluminum layer;
(Iv) laminating a titanium layer formed of titanium on the opposite side of the aluminum layer from the first layer;
(V) laminating a titanium nitride layer formed of titanium nitride on the opposite side of the aluminum layer from the titanium layer;
(Vi) a step of laminating an electrode layer on the opposite side of the titanium nitride layer from the titanium layer, and a method for manufacturing a semiconductor device. A method of manufacturing a semiconductor device according to claim 1,
The step (ii) is performed by a first apparatus,
The step (v) is performed by a second device different from the first device,
The step (iii) is a method for manufacturing a semiconductor device, which occurs when the semiconductor device is moved from the first device to the second device. A method of manufacturing a semiconductor device according to claim 2,
The method for manufacturing a semiconductor device, wherein the first device is a vapor deposition device, and the second device is a sputtering device. It is a manufacturing method of the semiconductor device according to any one of claims 1 to 3,
The semiconductor layer is formed of a group III nitride n-type semiconductor,
The method for manufacturing a semiconductor device, wherein the electrode layer is formed of at least one of a group consisting of gold, silver, and copper. The semiconductor device obtained by the manufacturing method of the semiconductor device as described in any one of Claim 1- Claim 4.