JP2015065379A - Substrate cleaner, substrate cleaning device, manufacturing method of cleaned substrate, and substrate processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate cleaner which cleans a substrate with clean cleaning members thereby improving the throughput, and to provide a substrate cleaning device, a manufacturing method of a cleaned substrate, and a substrate processing device.SOLUTION: A substrate cleaner 1 includes: a substrate holding device 10 which holds a substrate W; a first cleaning device 11 having a first cleaning member 11a which is placed in contact with a first surface WA of the substrate W held by the substrate holding device 10 to clean the first surface WA; a second cleaning device 12 having a second cleaning member 12a which is placed in contact with the first surface WA of the substrate W held by the substrate holding device 10 to clean the first surface WA; and a control device 50 which controls the first cleaning device 11 and the second cleaning device 12 so that when one of the first cleaning member 11a and the second cleaning member 12a cleans the first surface WA of the substrate W held by the substrate holding device 10, the other is located at a position separated from the substrate W held by the substrate holding device 10.

Description

  The present invention relates to a substrate cleaning machine, a substrate cleaning apparatus, a method for manufacturing a cleaned substrate, and a substrate processing apparatus, and more particularly to a substrate cleaning machine, a substrate cleaning apparatus, and a cleaned substrate that reduce the time required for cleaning while cleaning with a clean cleaning member. The present invention relates to a manufacturing method and a substrate processing apparatus.

  A substrate such as a semiconductor wafer is generally subjected to a cleaning process after a copper plating process or a CMP (chemical mechanical polishing) process on the surface thereof. As a cleaning apparatus for performing this cleaning process, a cleaning member having a roll type or a pencil type is used, and the substrate is cleaned by rubbing while rotating the cleaning member against the rotating substrate. There is a device provided with a self-cleaning device for cleaning a contaminated cleaning member for cleaning the next substrate (for example, see Patent Document 1).

JP-A-10-323631

  In recent years, the time required for polishing tends to be shortened with the miniaturization and thinning of a semiconductor device or the like to be processed by CMP, and there is a demand for shortening the time required for cleaning in order to improve throughput. However, if the time for performing self-cleaning is shortened as the cleaning time is shortened, there is a concern that cleaning of the cleaning member becomes insufficient.

  SUMMARY OF THE INVENTION In view of the above-described problems, the present invention has an object to provide a substrate cleaning machine, a substrate cleaning apparatus, a method for manufacturing a cleaned substrate, and a substrate processing apparatus that can improve throughput while cleaning with a clean cleaning member. .

  In order to achieve the above object, a substrate cleaning machine according to a first aspect of the present invention includes a first surface WA and a second surface WB opposite to the first surface WA, for example, as shown in FIG. A substrate holding device 10 that holds the substrate W having a first cleaning member 11a that contacts the first surface WA of the substrate W held by the substrate holding device 10 and cleans the first surface WA. A first cleaning device 11; a second cleaning device 12 having a second cleaning member 12a that contacts the first surface WA of the substrate W held by the substrate holding device 10 and cleans the first surface WA; When one of the first cleaning member 11a and the second cleaning member 12a is cleaning the first surface WA of the substrate W held by the substrate holding device 10, the other is held by the substrate holding device 10. The first cleaning device 11 and the second cleaning device so that they are located away from the processed substrate W. And a control unit 50 for controlling the device 12.

  If comprised in this way, it will become possible to ensure the time which cleans the other cleaning member while one cleaning member is cleaning the first surface, and the time required for cleaning the first surface is reduced. Even in this case, the first surface can be cleaned with a clean cleaning member.

  Further, the substrate cleaning machine according to the second aspect of the present invention is, for example, as shown in FIG. 1, in the substrate cleaning machine 1 according to the first aspect of the present invention, the first cleaning member 11a and the second cleaning member The pre-cleaning devices 15 and 16 for cleaning the cleaning member 12a before being used for cleaning the first surface WA are provided; the control device 50 includes the first cleaning member 11a and the second cleaning member 12a. Control is performed so that the first surface WA of the substrate W held by the substrate holding device 10 is not cleaned by the pre-cleaning devices 15 and 16.

  If comprised in this way, many pre-cleaning time of a washing | cleaning apparatus can be ensured, and the cleanliness of the washing | cleaning member before wash | cleaning a 1st surface can be improved.

  Further, the substrate cleaning machine according to the third aspect of the present invention is, for example, as shown in FIG. 1, in the substrate cleaning machine 1 according to the second aspect of the present invention, the substrate holding device 10 and the first cleaning apparatus. 11, the second cleaning device 12 and the chamber 40 that houses the pre-cleaning devices 15 and 16; at least one of the first cleaning member 11a and the second cleaning member 12a, and the pre-cleaning device 15 ( 16) is provided with a drawing mechanism 41 (42) that can be pulled out from the chamber 40.

  If comprised in this way, while the 1st surface is wash | cleaned with one washing member, the maintenance of the other washing member can be performed, and the downtime accompanying a maintenance can be shortened.

  The substrate cleaning machine according to the fourth aspect of the present invention is, for example, referring to FIG. 1, the substrate cleaning machine according to any one of the first to third aspects of the present invention. In 1A, the cleaning level when the first surface WA is cleaned with the second cleaning member 12a is higher than the cleaning level when the first surface WA is cleaned with the first cleaning member 11a. In addition, a first cleaning device 11 and a second cleaning device 12 are configured.

  If comprised in this way, maintenance, such as cleaning and replacement | exchange, can be set separately according to the characteristic and the condition of a cleaning member, and the lifetime of a cleaning member can be extended.

  Further, the substrate cleaning machine according to the fifth aspect of the present invention, for example, referring to FIG. 1, shows the substrate cleaning machine according to any one of the first to fourth aspects of the present invention. In 1A, after holding the substrate W by the substrate holding device 10, the control device 50 cleans the first surface WA with the first cleaning member 11a, and then the first surface WA with the second cleaning member 12a. From the start of cleaning of the first surface WA by the first cleaning member 11a to the completion of cleaning of the first surface WA by the second cleaning member 12a, the holding of the substrate W by the substrate holding device 10 is maintained. Thus, the substrate holding device 10, the first cleaning device 11, and the second cleaning device 12 are controlled.

  With this configuration, it is not necessary to transport the substrate when shifting from the cleaning by the first cleaning member to the cleaning by the second cleaning member while improving the cleaning performance of the first surface. Time can be shortened and throughput can be improved.

  Moreover, the substrate cleaning apparatus according to the sixth aspect of the present invention includes a substrate cleaning machine 1A according to any one of the first to fifth aspects of the present invention as shown in FIG. A plurality of substrate cleaning machines 1A of the plurality of substrate cleaning machines 1A are arranged in the first cleaning line LF; a second substrate cleaning machine 1AS of the plurality of substrate cleaning machines 1A is the first Disposed on a second cleaning line LS different from the first cleaning line LF; a first additional substrate processing unit 2F (3F) disposed on the first cleaning line LF; and disposed on the second cleaning line LS. And a second additional substrate processing unit 2S (3S). Here, the first substrate cleaning machine 1AF and the second substrate cleaning machine 1AS are configured to perform the same type of cleaning; the first additional substrate processing unit is different from the first substrate cleaning machine 1AF. A second additional substrate cleaning machine 2F that performs the same type of cleaning as that of the first additional substrate cleaning machine 2F.

  If comprised in this way, since the board | substrate washing | cleaning machine is provided in each of the 1st cleaning line and the 2nd cleaning line, even when performing cleaning performed by one module in two steps, it does not extend over another cleaning line. Can be performed in a single cleaning line and the processes can be performed in parallel.

  In addition, a method for manufacturing a cleaned substrate according to the seventh aspect of the present invention is shown in any one of the first to fifth aspects of the present invention described above with reference to FIGS. A method of manufacturing a cleaned substrate, which is a substrate W after cleaning, by cleaning a substrate before cleaning, which is a substrate W before cleaning, by the substrate cleaning machine 1A according to the aspect; holding the substrate W by the substrate holding device 10 A substrate holding step (S2); a first cleaning step (S4) for cleaning the substrate W held by the substrate holding device 10 with the first cleaning member 11a; and a substrate after the first cleaning step (S4). A retracting step (S5) for retracting the first cleaning member 11a from the substrate W while the retaining device 10 retains the substrate W; and after the retracting step (S5), the substrate W held on the substrate retaining device 10 is removed. A second cleaning step (S7) in which the second cleaning member 12a subsequently performs cleaning; Provided.

  With this configuration, it is not necessary to transport the substrate when shifting from the cleaning by the first cleaning member to the cleaning by the second cleaning member, the total substrate transport time can be shortened, and the throughput is improved. be able to.

  Further, as the substrate processing apparatus according to the eighth aspect of the present invention, for example, as shown in FIG. 7, the substrate cleaning machine 1A according to any one of the first to fifth aspects of the present invention is used. And a substrate processing machine 83 for processing the substrate W (see, for example, FIG. 1) before cleaning in the substrate cleaning machine 1A. Alternatively, for example, as shown in FIG. 7, the substrate cleaning apparatus 104 according to the sixth aspect of the present invention and a substrate processing machine 83 that processes the substrate W (see FIG. 1) before cleaning in the substrate cleaning apparatus 104. The substrate processing apparatus 100 may be provided.

  With this configuration, a substrate processing apparatus with improved throughput is obtained.

  According to the present invention, it is possible to secure time for cleaning the other cleaning member while one cleaning member is cleaning the first surface, and shorten the time required for cleaning the first surface. Even in this case, the first surface can be cleaned with a clean cleaning member.

It is a figure which shows schematic structure of the board | substrate washing | cleaning machine which concerns on the 1st Embodiment of this invention. (A) is a plan view and (B) is a side view. It is a time chart explaining operation | movement of the board | substrate cleaning machine which concerns on the 1st Embodiment of this invention. It is a flowchart explaining operation | movement of the board | substrate cleaning machine which concerns on the modification of the 1st Embodiment of this invention. It is a schematic side view of the substrate cleaning apparatus according to the second embodiment of the present invention. It is a figure which shows schematic structure of the board | substrate cleaning machine which concerns on the modification of the 1st Embodiment of this invention. (A) is a plan view and (B) is a side view. FIG. 6A is a plan view showing a first modification example, and FIG. 6B is a plan view showing a second modification example. It is a top view which shows the whole structure of the substrate processing apparatus which mounted the substrate cleaning apparatus which concerns on the 2nd Embodiment of this invention.

  Embodiments of the present invention will be described below with reference to the drawings. In the drawings, the same or similar members are denoted by the same or similar reference numerals, and redundant description is omitted.

  First, referring to FIG. 1, a substrate cleaning machine 1 according to a first embodiment of the present invention will be described. 1A and 1B are diagrams showing a schematic configuration of the substrate cleaning machine 1, wherein FIG. 1A is a plan view and FIG. 1B is a side view. The substrate cleaning machine 1 (hereinafter simply referred to as “cleaning machine 1”) includes four rollers 10 as a substrate holding device that holds the substrate W, a first cleaning device 11 as a first cleaning device, and a second cleaning device 11. A second cleaning device 12 as a cleaning device, a first self-cleaning device 15 and a second self-cleaning device 16 as pre-cleaning devices, a chamber 40 for housing them, and a control device 50. The substrate W to be cleaned by the substrate cleaning machine has a front surface WA as a first surface and a back surface WB as a second surface, and in the present embodiment, it will be described as a circular flat semiconductor substrate. . The substrate W is typically a circular substrate with a silicon dioxide film in which grooves corresponding to the wiring pattern are formed on the surface WA. For example, a titanium nitride film or a tantalum nitride film as a barrier metal on the silicon dioxide film. Various films such as a tungsten film and a copper film are formed thereon.

  The roller 10 is formed in a substantially cylindrical shape, and is disposed so that the axis of the cylinder is vertical. In the roller 10, a groove portion 10 g in which a groove having a width slightly larger than the thickness of the substrate W is formed in the vicinity of the upper end when the roller 10 is arranged vertically, is formed on the entire circumference around the axis 10 a. The width that is slightly larger than the thickness of the substrate W in the groove portion 10g is typically a width that can stably hold the substrate W without causing any trouble in inserting and removing the side edge portion of the substrate W into and from the groove portion 10g. The groove portion 10g is formed to a depth at which the substrate W is not easily detached when the substrate W is held. In this embodiment, each of the four rollers 10 provided has a groove 10g at the same height. Thus, the four rollers 10 are configured so that the substrate W can be held in a state where the surface WA is horizontal.

  In the present embodiment, four rollers 10 are provided as described above, but may be three, or may be five or more. Each roller 10 is configured to be able to rotate around an axis 10a by a drive device (not shown) such as a servo motor. Each roller 10 is rotated by rotating around the axis 10a without causing an excessive bending force to act on the substrate W when the side edge of the substrate W is engaged with the groove 10g to hold the substrate W. The rollers 10 are arranged at positions that hold the substrate W with a force that can rotate the substrate W in the direction opposite to the rotation direction of each roller 10. Further, the rollers 10 are arranged so that the substrate W can be stably held as long as the mutual positional relationship does not hinder the movement of the robot hand 52 that transports the substrate W. Each roller 10 can move between a holding position where the side edge of the substrate W is engaged with the groove 10g and a release position where the side edge of the substrate W is not engaged with the groove 10g. It is configured as follows.

  The first cleaning device 11 includes a first roll sponge 11a as a first cleaning member that cleans the surface WA of the substrate W, and a first moving device 11b that moves the first roll sponge 11a. The first roll sponge 11a is a columnar sponge longer than the diameter of the substrate W, and is disposed above the substrate W held by each roller 10 so that the longitudinal direction is parallel to the substrate W. . As for the 1st roll sponge 11a, a cylindrical side surface turns into a surface which wash | cleans the board | substrate W. FIG. The first roll sponge 11a is typically made of a porous PVA sponge, but may be made of urethane foam. The smaller the average diameter of the holes formed in the sponge, the higher the particle removal capability. The first roll sponge 11a is supported by the first moving device 11b at one end of a columnar shape. The first roll sponge 11a is configured to be able to rotate around a cylindrical axis.

  The first moving device 11b has a rotation mechanism (not shown) that rotates the supporting first roll sponge 11a around the axis. The first moving device 11b is configured to be able to move the first roll sponge 11a between the position for cleaning the substrate W and the position of the first self-cleaning device 15 in accordance with its movement. Yes. In the present embodiment, the first moving device 11b includes the position of the first roll sponge 11a when the first roll sponge 11a contacts and cleans the substrate W held by each roller 10, and from there. It is possible to vertically move up to the height of the first self-cleaning device 15 in the vertical direction, and at the time of cleaning the substrate W in a plan view in a horizontal direction from a certain position of the first self-cleaning device 15 It is comprised so that it can move horizontally between positions.

  The second cleaning device 12 is a separate cleaning device from the first cleaning device 11. In the present embodiment, the second cleaning device 12 is configured in the same manner as the first cleaning device 11, and includes a second roll sponge 12 a as a second cleaning member that cleans the surface WA of the substrate W, and a second And a second moving device 12b for moving the roll sponge 12a. In the second cleaning device 12, the second roll sponge 12a and the second moving device 12b correspond to the first roll sponge 11a and the first moving device 11b of the first cleaning device 11, respectively. The 2nd roll sponge 12a is comprised similarly to the 1st roll sponge 11a, and operate | moves similarly. The second moving device 12b is configured in the same manner as the first moving device 11b. The second moving device 12b moves horizontally between a position when the substrate W is cleaned and a position where the second self-cleaning device 16 is located in a plan view. Except for this, it operates in the same manner as the first mobile device 11b.

  The cleaning machine 1 according to the present embodiment further includes a third roll sponge 13a as a third cleaning member that cleans the back surface WB of the substrate W. The third roll sponge 13a is also composed of the same material, size, and shape as the first roll sponge 11a and the second roll sponge 12a. The third roll sponge 13a is supported by a third moving device (not shown) at one cylindrical end. The third moving device (not shown) moves the third roll sponge 13a between a position in contact with the back surface WB of the substrate W held by each roller 10 and a position away from the back surface WB (downward position). It can be moved in the vertical direction.

  The first self-cleaning device 15 is a device that cleans the contaminated first roll sponge 11a by cleaning the surface WA of the substrate W. The self-cleaning performed by the first self-cleaning device 15 cleans the first roll sponge 11a itself (in advance) before being used for cleaning the surface WA, and corresponds to pre-cleaning. In the present embodiment, the first self-cleaning device 15 includes a cleaning plate 15a, a pure water nozzle 15b that supplies pure water, and a chemical nozzle 15c that supplies a chemical liquid for self-cleaning. The cleaning plate 15a is a member suitable for removing foreign substances adhering to the first roll sponge 11a, and a quartz plate is used in the present embodiment. The first self-cleaning device 15 typically further includes a cleaning tank (not shown) that collects the pure water supplied from the pure water nozzle 15b and the chemical liquid supplied from the chemical liquid nozzle 15c without scattering. It is preferable. The first self-cleaning device 15 presses the first roll sponge 11a against the cleaning plate 15a while applying pure water and / or a chemical solution to the first roll sponge 11a rotating around the axis, so that the first roll sponge 11a is pressed against the first roll sponge 11a. It is configured to remove and clean the adhered foreign matter.

  The second self-cleaning device 16 is a device that cleans the contaminated second roll sponge 12a by cleaning the surface WA of the substrate W. The second self-cleaning device 16 is configured in the same manner as the first self-cleaning device 15, and in this embodiment, has a cleaning plate 16a, a pure water nozzle 16b, and a chemical nozzle 16c. In the second self-cleaning device 16, the cleaning plate 16a, the pure water nozzle 16b, and the chemical solution nozzle 16c correspond to the cleaning plate 15a, the pure water nozzle 15b, and the chemical solution nozzle 15c of the first self-cleaning device 15, respectively. It is constituted similarly.

  The first self-cleaning device 15 and the second self-cleaning device 16 are held by each roller 10 so that the substrate W is sandwiched between the two outside the substrate W held by each roller 10 in plan view. Arranged symmetrically about an imaginary straight line passing through the center of the substrate W. The first self-cleaning device 15 and the second self-cleaning device 16 are arranged above the substrate W held by each roller 10 in the height direction, but are held by each roller. It does not have to be above the substrate W. The first cleaning device 11 is configured to be able to move between a position on the surface WA and the first self-cleaning device 15. The second cleaning device 12 is configured to be able to move between a position on the surface WA and the second self-cleaning device 16.

  The cleaning machine 1 according to the present embodiment further includes surface chemical nozzles 45a and 45b for supplying a chemical to the surface WA of the substrate W held by each roller 10, and a surface rinse nozzle 46a for supplying pure water. 46b. In the present embodiment, the surface chemical nozzle 45a and the surface rinse nozzle 46a are disposed adjacent to each other, and the surface chemical nozzle 45b and the surface rinse nozzle 46b are disposed adjacent to each other. The surface chemical nozzle 45a and the surface rinse nozzle 46a, and the surface chemical nozzle 45b and the surface rinse nozzle 46b are arranged symmetrically with the center of the substrate W held by each roller 10 as the center of symmetry. Further, the cleaning machine 1 according to the present embodiment has a back surface chemical nozzle 48 for supplying a chemical solution and a back surface rinse nozzle 49 for supplying pure water to the back surface WB of the substrate W held by each roller 10. doing. These nozzles 45a, 45b, 46a, 46b, 48, 49 are configured to discharge a chemical solution or pure water when the surface WA or the back surface WB of the substrate W is cleaned by the roll sponges 11a, 12a, 13a. ing.

  The chamber 40 is formed in a substantially rectangular parallelepiped shape. In the chamber 40, a loading / unloading shutter 40w for forming an opening for loading / unloading the substrate W with respect to the inside / outside of the chamber 40, and a first shutter for forming an opening for loading / unloading the first roll sponge 11a and the first self-cleaning device 15 are provided. 40a and a second shutter 40b for forming an opening through which the second roll sponge 12a and the second self-cleaning device 16 are taken in and out are provided. The opening of the chamber 40 opened and closed by the first shutter 40a is an extension line (virtual straight line) that extends the axis of the first roll sponge 11a at the position of the first self-cleaning device 15 to the opposite side of the first moving device 11b. Is formed in such a size that the first roll sponge 11a and the first self-cleaning device 15 can be taken in and out at a position where it hits the chamber 40. The opening of the chamber 40 opened and closed by the second shutter 40b is an extension line (virtual straight line) that extends the axis of the second roll sponge 12a at the position of the second self-cleaning device 16 to the opposite side of the second moving device 12b. However, the second roll sponge 12a and the second self-cleaning device 16 are formed in a size that allows the second roll sponge 12a and the second self-cleaning device 16 to be taken in and out.

  The opening of the chamber 40 opened and closed by the carry-in / out shutter 40w is formed in a size that allows the substrate W held by the robot hand 52 to be taken in and out between the first shutter 40a and the second shutter 40b. Between the 1st shutter 40a and the 1st self-cleaning apparatus 15, the 1st drawer mechanism 41 which guides the 1st self-cleaning apparatus 15 which accommodated the 1st roll sponge 11a out of the chamber 40 is provided. Between the second shutter 40b and the second self-cleaning device 16, there is provided a second pulling mechanism 42 for guiding the second self-cleaning device 16 containing the second roll sponge 12a to the outside of the chamber 40. The direction in which the first roll sponge 11a and the first self-cleaning device 15 are put in and out, the direction in which the second roll sponge 12a and the second self-cleaning device 16 are put in and out, and the direction in which the substrate W held by the robot hand 52 is put in and out. Is not limited to the direction shown in FIG. 1, and can be appropriately changed according to the installation mode of the washing machine 1.

  The control device 50 can control the holding and releasing of the substrate W by each roller 10 and the rotation of the substrate W in the horizontal plane by controlling the movement and rotation around the axis 10a of each roller 10 in plan view. It is configured as follows. Moreover, the control apparatus 50 is comprised so that rotation of the 1st roll sponge 11a and the 2nd roll sponge 12a and the movement of the 1st moving apparatus 11b and the 2nd moving apparatus 12b can be controlled. Further, the control device 50 is configured to be able to control the operation / stop of the first self-cleaning device 15 and the second self-cleaning device 16. In addition, the control device 50 is configured to be able to control whether chemical liquid or pure water is supplied from the surface chemical nozzles 45a and 45b, the surface rinse nozzles 46a and 46b, the back surface chemical nozzle 48, and the back surface rinse nozzle 49. ing. Moreover, the control apparatus 50 is comprised so that opening / closing of the carrying in / out shutter 40w can be controlled.

  Next, the operation of the cleaning machine 1 will be described with reference to FIG. FIG. 2 is a time chart of the operation of the cleaning machine 1. In the following description, when referring to the configuration of the washing machine 1, FIG. 1 will be referred to as appropriate. Further, the operation of the constituent members of the cleaning machine 1 is controlled by the control device 50. While the cleaning machine 1 is stopped, the first cleaning device 11 is at the position of the first self-cleaning device 15 and the second cleaning device 12 is at the position of the second self-cleaning device 16 (T0). At this time, there is no substrate W in the chamber 40. When the cleaning machine 1 is operated, the substrate W is carried into the chamber 40 by the robot hand 52, and the carried substrate W is rotated by being held by the rollers 10 with the surface WA facing upward (T0 to T1). ). The rotation of the substrate W is performed with the rotation of each roller 10 around the axis 10a. When the substrate W is held by each roller 10, the robot hand 52 is retracted from the chamber 40.

  While the transfer of the substrate W is performed, the first cleaning device 11 moves from the position of the first self-cleaning device 15 to the position of the rotating substrate W held by each roller 10, The first roll sponge 11a contacts the surface WA of the substrate W (T1). The movement of the first cleaning device 11 is preferably performed in parallel with the transport of the substrate W from the viewpoint of improving the throughput. Further, from the viewpoint of suppressing adverse effects on the cleaning performance such as an increase in defects, the first roll sponge 11a is applied to the surface WA after the rotation speed of the substrate W reaches a predetermined rotation speed suitable for the subsequent cleaning process. It is good to make contact. Furthermore, from the viewpoint of improving the throughput, the control device 50 allows the first roll without delay after the rotational speed of the substrate W reaches the predetermined rotational speed (typically, at the same time when the predetermined rotational speed is reached). It is preferable to control the movement of the first moving device 11b so that the sponge 11a contacts the surface WA.

  When the first roll sponge 11a comes into contact with the rotating substrate W, chemicals are supplied from the surface chemical nozzles 45a and 45b to the surface WA, and pure water is supplied from the surface rinse nozzles 46a and 46b. The surface WA is cleaned by the first roll sponge 11a coming into contact with the rotating substrate W supplied with the chemical solution and pure water and rotating around the axis (T1 to T2). While the surface WA is being cleaned by the first roll sponge 11a, the second roll sponge 12a is self-cleaned at the position of the second self-cleaning device 16 that is away from the substrate W.

  Until the cleaning of the substrate W is completed and the cleaning of the next substrate W is started (T2 to T3), the following operations are performed. First, the first roll sponge 11a is separated from the rotating substrate W. Then, the rotation of the substrate W stops as the rotation of each roller 10 around the axis 10 a stops, and the substrate W is carried out of the chamber 40 by the robot hand 52. After the substrate W cleaned by the cleaning machine 1 is unloaded, another uncleaned substrate W is loaded into the chamber 40 by the robot hand 52, and the loaded substrate W is held by each roller 10, Rotated. During this time, the first cleaning device 11 moves to the position of the first self-cleaning device 15, and self-cleaning of the first roll sponge 11a is started. On the other hand, the second cleaning device 12 finishes the self-cleaning of the second roll sponge 12a, moves from the position of the second self-cleaning device 16 to the position of the substrate W held by each roller 10, and the second The roll sponge 12a contacts the surface WA of the rotating substrate W. At this time, the second roll sponge 12a is in a sufficiently clean state because the self-cleaning was performed while the surface WA was being cleaned by the first roll sponge 11a (T1 to T2). . The movement of the second cleaning device 12 and the timing at which the second roll sponge 12a contacts the surface WA are the same as the operation timing of the first cleaning device 11 described above. Further, when the first cleaning device 11 and the second cleaning device 12 move, the timing is adjusted by the control device 50 so as not to interfere with each other.

  When the second roll sponge 12a comes into contact with the rotating substrate W, the surface WA is cleaned by the second cleaning device 12 in the same manner as the cleaning of the surface WA by the first cleaning device 11 (T3 to T4). . In other words, the cleaning at the time T3 to T4 is obtained by replacing the first roll sponge 11a used in the cleaning performed at the time T1 to T2 with the second roll sponge 12a. While the surface WA is being cleaned by the second roll sponge 12a, the self-cleaning of the first roll sponge 11a at the position of the first self-cleaning device 15 away from the substrate W is continued.

  In the period from the completion of the cleaning of the substrate W to the start of the cleaning of the next substrate W (T4 to T5), operations similar to those performed at the time T2 to T3 are performed. The difference between the conveyance performed at time T4 to T5 and the conveyance performed at time T2 to T3 is that the first cleaning device 11 and the second cleaning device 12 are interchanged. That is, first, the second roll sponge 12a is separated from the rotating substrate W. Then, the rotation of the substrate W is stopped, and the robot hand 52 carries it out of the chamber 40. Instead, another unwashed substrate W is carried into the chamber 40, held by each roller 10, and rotated. It is done. During this time, the second cleaning device 12 moves to the position of the second self-cleaning device 16, and self-cleaning of the second roll sponge 12a is started. On the other hand, the first cleaning device 11 finishes the self-cleaning of the first roll sponge 11a, moves from the position of the first self-cleaning device 15 to the position of the substrate W, and the first roll sponge 11a rotates. It contacts the surface WA of the substrate W.

  Hereinafter, at time T5 to T6, the same cleaning as the cleaning at time T1 to T2 is performed, and at time T6 to T7, the same transport as the transport at time T2 to T3 is performed, and the subsequent operations are similarly repeated. Although omitted in the description with reference to FIG. 2 so far, when the front surface WA is cleaned (T1-T2, T3-T4,...), The third roll sponge 13a is formed on the back surface WB. , The chemical solution is supplied from the back surface chemical nozzle 48, and the pure water is supplied from the back surface rinse nozzle 49, and the back surface WB is also cleaned. When the substrate W is transported (T2 to T3, T4 to T5,...), The third roll sponge 13a moves away from the substrate W held by each roller 10 and retreats downward. After the W is replaced and the uncleaned substrate W is held by the rollers 10 and rotated, the substrate W moves up and down so as to contact the back surface WB. In the present embodiment, the third roll sponge 13a is not pre-cleaned such as self-cleaning when retracted downward, but may be configured to perform pre-cleaning.

  In the cleaning machine 1 described above, while one roll sponge (for example, the first roll sponge 11a) is cleaning the surface WA of the substrate W, the other roll sponge (for example, the second roll sponge 12a) is continued. Since the self-cleaning is performed, the self-cleaning time is not limited by the transfer time of the substrate W. For this reason, it is possible to start the cleaning of the substrate W immediately after the transport of the substrate W into the chamber 40 while ensuring a sufficient time for self-cleaning of the roll sponge, thereby improving the throughput without lowering the cleaning level. Can be made. Further, when performing maintenance on the first cleaning device 11 or the second cleaning device 12 such as when the roll sponge has reached the end of its life, maintenance is performed by pulling out the cleaning device on which self-cleaning has been performed from the chamber 40. By performing the maintenance, the cleaning of the substrate W can be continued with the roll sponge of the other cleaning apparatus while performing the maintenance of one cleaning apparatus, and the downtime of the cleaning machine 1 due to the maintenance can be reduced.

  In the above description, the first roll sponge 11a and the second roll sponge 12a are the same, but they may be configured with different performances. For example, the second roll sponge 12a is washed more than the first roll sponge 11a by using the second roll sponge 12a having a smaller average diameter of the holes formed in the sponge than the first roll sponge 11a. For example, the first roll sponge 11a may be used for rough cleaning, and the second roll sponge 12a may be used for finish cleaning. As described above, the first roll sponge 11a and the second roll sponge 12a having different cleaning levels are referred to as the cleaning machine 1A and are distinguished from the above-described cleaning machine 1. The cleaning machine 1A has the same configuration as the cleaning machine 1 except that the cleaning levels of the first roll sponge 11a and the second roll sponge 12a are different. Below, the typical operation example of 1 A of washing machines is demonstrated.

  FIG. 3 is a flowchart for explaining the operation of the washer 1A according to the modification of the first embodiment of the present invention. In the following description, when referring to the configuration of the cleaning machine 1A, reference is made to FIG. 1 as appropriate. The operation of the constituent members of the cleaning machine 1A is controlled by the control device 50. While the cleaning machine 1 </ b> A is stopped, the first cleaning device 11 is at the position of the first self-cleaning device 15, the second cleaning device 12 is at the position of the second self-cleaning device 16, and there is no substrate W in the chamber 40. When the cleaning machine 1A is operated, the substrate W is carried into the chamber 40 by the robot hand 52 (S1). The loaded substrate W is held by each roller 10 and rotated (substrate holding step; S2). When the substrate W is held by each roller 10, the robot hand 52 is retracted from the chamber 40.

  While the transfer of the substrate W is performed, the first cleaning device 11 moves from the position of the first self-cleaning device 15 to the position of the rotating substrate W held by each roller 10, The first roll sponge 11a contacts the surface WA of the substrate W (S3). The operation up to this point is the same as that of the cleaning machine 1, including the timing of loading the substrate W and the movement of the first cleaning device 11, the rotational speed of the substrate W, the timing of contact of the first roll sponge 11a with the surface WA, and the like. It is. When the first roll sponge 11a contacts the surface WA, the surface WA is roughly cleaned (first cleaning step; S4). During the rough cleaning of the surface WA (S4), typically, a chemical is supplied from the surface chemical nozzles 45a and 45b to the surface WA, but pure water may be supplied from the surface rinse nozzles 46a and 46b. . In the cleaning machine 1A, as in the cleaning machine 1, the second roll sponge 12a is self-cleaned by the second self-cleaning device 16 while the surface WA is being cleaned by the first roll sponge 11a.

  When the rough cleaning (S4) of the surface WA is completed, the first roll sponge 11a is separated from the surface WA and moved to the first self-cleaning device 15 (retraction step; S5). When the first roll sponge 11a is retracted from the surface WA, the second cleaning device 12 at the position of the second self-cleaning device 16 moves to the position of the rotating substrate W so as to be replaced with the first roll sponge 11a. To contact the surface WA (S6). Until the first roll sponge 11a is retracted from the surface WA and the second roll sponge 12a is in contact with the surface WA, the substrate W is maintained in the state of being held by each roller 10, and typically the substrate The rotational speed of W is also maintained at a predetermined rotational speed. After the first roll sponge 11a is retracted from the surface WA, if the substrate W is at a predetermined rotation speed before the second roll sponge 12a contacts, the rotation speed is once decreased (including zero). Also good.

  When the second roll sponge 12a comes into contact with the surface WA, the surface WA is subjected to finish cleaning (second cleaning step; S7). During finish cleaning of the surface WA (S7), typically, pure water is supplied to the surface WA from the surface rinse nozzles 46a and 46b, but chemicals may be supplied from the surface chemical nozzles 45a and 45b. . In the cleaning machine 1 </ b> A, as in the cleaning machine 1, the first roll sponge 11 a is self-cleaned by the first self-cleaning device 15 while the surface WA is being cleaned by the second roll sponge 12 a. After finishing the surface WA (S7), the second roll sponge 12a is separated from the surface WA and moved to the second self-cleaning device 16 (S8). When the second roll sponge 12a is separated from the surface WA, the rotation of the substrate W is stopped, and the holding of the substrate W by each roller 10 is released (S9). The substrate W whose holding has been released is carried out of the chamber 40 by the robot hand 52 (S10). Although omitted in the description with reference to FIG. 3 so far, when the front surface WA is cleaned (S4, S7), the third roll sponge 13a is formed on the back surface WB as in the cleaning machine 1. The back surface WB is also cleaned by supplying the chemical solution and / or pure water while making contact.

  In the cleaning machine 1A operating as described above, two types of cleaning, rough cleaning and finishing cleaning, can be completed with one module, and it is not necessary to transport the substrate W when shifting from rough cleaning to finishing cleaning. The total substrate transfer time can be shortened and the throughput can be improved. Also, if the time required for rough cleaning and the time required for finishing cleaning are different, if rough cleaning and finishing cleaning are performed in separate modules, the throughput will be dominated by the long cleaning time, In the cleaning machine 1A according to this modification, the throughput is not controlled by the longer cleaning time. Further, in the cleaning machine 1A, it is possible to change whether to supply chemical liquid or pure water between rough cleaning and finish cleaning, and the degree of freedom of the process can be increased. In addition, since the cleaning machine 1A has two cleaning members (11a, 12a) in one module, as in the cleaning machine 1, sufficient time for self-cleaning can be secured, and the cleaning level is lowered. You can avoid that.

  In the above description, the cleaning machines 1 and 1A have the third roll sponge 13a (third cleaning member) that cleans the back surface WB of the substrate W. However, the cleaning machine 1 or 1A is not sufficient to clean the back surface WB. In this case, the third roll sponge 13a may not be provided. Conversely, the cleaning machines 1 and 1A may include a fourth cleaning member that cleans the back surface WB of the substrate W in addition to the third cleaning member (the third roll sponge 13a in the present embodiment). In this case, a pre-cleaning device that performs pre-cleaning such as self-cleaning is further provided for the third cleaning member and the fourth cleaning member, and the operation is similar to the operation of the first roll sponge 11a and the second roll sponge 12a. The third cleaning member and the fourth cleaning member alternately perform the cleaning of the back surface WB, and the cleaning member that has not performed the cleaning of the back surface WB may be pre-cleaned.

  Next, a substrate cleaning apparatus 104 according to the second embodiment of the present invention will be described with reference to FIG. FIG. 4 is a schematic configuration diagram of the substrate cleaning apparatus 104. The substrate cleaning apparatus 104 includes two each of the above-described cleaning machine 1A, substrate cleaning machine 2 (hereinafter simply referred to as “cleaning machine 2”), and two drying machines 3, and further includes a first robot. A hand 52 and a second robot hand 53 are provided. The two washing machines 1A have the same configuration, but in order to distinguish between them, one washing machine 1A may be called "washing machine 1AF" and the other washing machine 1A may be called "washing machine 1AS". When referring to the properties common to both, they are collectively referred to as “washing machine 1A”. Similarly, for two washing machines 2 having the same configuration, one washing machine 2 may be referred to as “washing machine 2F”, and the other washing machine 2 may be referred to as “washing machine 2S”. 2 ”. Similarly, for two dryers 3 having the same configuration, one dryer 3 may be referred to as a “dryer 3F” and the other dryer 3 may be referred to as a “dryer 3S”. 3 ”.

  Here, with reference to FIG. 5, the structure of the washing machine 2 will be described. 5A and 5B are diagrams showing a schematic configuration of the cleaning machine 2, wherein FIG. 5A is a plan view and FIG. 5B is a side view. The main difference between the cleaning machine 2 and the cleaning machine 1A (see FIG. 1) is that the first cleaning device 11 having the cylindrical first roll sponge 11a and the cylindrical second roll provided in the cleaning machine 1A. Instead of the second cleaning device 12 having the sponge 12a, the cleaning machine 2 includes a first cleaning device 21 having a pencil-type first pencil sponge 21a and a second cleaning device 22 having a pencil-type second pencil sponge 22a. It is a point that has. The cleaning machine 2 includes a chuck 20 as a substrate holding device that holds the substrate W, the first cleaning device 21 described above, the second cleaning device 22 described above, a first self-cleaning device 25, and a second self-cleaning device. 26, a chamber 40 for accommodating these, and a control device 250, which is one form of a substrate cleaning machine. In the cleaning machine 2, the first cleaning device 21 corresponds to the first cleaning device, the second cleaning device 22 corresponds to the second cleaning device, and the first self-cleaning device 25 and the second self-cleaning device 26 are provided in advance. It corresponds to a cleaning device.

  The chuck 20 includes a chuck claw 20a and a rotation drive shaft 20b. A plurality of chuck claws 20 a are provided so as to hold the substrate W by holding the outer peripheral end (edge portion) of the substrate W. In the present embodiment, four chuck claws 20a are provided, and there is an interval between adjacent chuck claws 20a that does not hinder the movement of the robot hands 52 and 53 (see FIG. 4) that transport the substrate W. Is provided. Each of the chuck claws 20a is connected to the rotation drive shaft 20b so that the surface of the substrate W can be held horizontally. In the present embodiment, the substrate W is held by the chuck claws 20a so that the surface WA faces upward. The rotation drive shaft 20b can be rotated around an axis extending perpendicularly to the surface of the substrate W, and the substrate W can be rotated in a horizontal plane by rotation around the axis of the rotation drive shaft 20b. ing.

  The first cleaning device 21 includes a first pen sponge 21a, a first arm 21b that supports the first pen sponge 21a, and a first moving device 21c that moves the first arm 21b. The first pen sponge 21a corresponds to a first cleaning member. The first pen sponge 21a is a columnar sponge that is smaller in length and diameter than the first roll sponge 11a (see FIG. 1), and the axis line is perpendicular to the surface WA above the substrate W held by the chuck 20. It is arranged to become. The first pen sponge 21a has a length shorter than the diameter. The first pen sponge 21 a has a cylindrical end surface that serves as a surface for cleaning the substrate W. The first pen sponge 21a can be made of the same material as the first roll sponge 11a, but may be formed of a different material. The first pen sponge 21a is supported by the first arm 21b on the end surface opposite to the surface for cleaning the substrate W.

  The first arm 21 b is a flat bar-like member that is longer than the radius of the substrate W. The first arm 21b is typically disposed so that its longitudinal direction is parallel to the surface WA. The first arm 21b supports the first pen sponge 21a at one end so as to be rotatable about its axis, and the first moving device 21c is connected to the other end. The first moving device 21c is a member that moves the first arm 21b vertically up and down and swings the first arm 21b in the horizontal direction. The horizontal movement of the first arm 21b by the first moving device 21c is such that the locus of the first pen sponge 21a draws an arc around the connection portion of the first arm 21b with the first moving device 21c. It has become. At this time, the first arm 21b and the first moving device 21c are arranged so that the first pen sponge 21a passes through the center of the surface WA. The first moving device 21c has a motor (not shown), and the first pen sponge 21a is cleaned with the substrate W by moving the first arm 21b vertically and horizontally as described above. It is configured to be movable between a position on the surface WA and a position of the first self-cleaning device 25.

  The second cleaning device 22 includes a second pen sponge 22a, a second arm 22b, and a second moving device 22c. In the present embodiment, the second cleaning device 22 is configured in the same manner as the first cleaning device 21 except for the second pen sponge 22a. In the second cleaning device 22, the second arm 22b and the second moving device 22c correspond to the first arm 21b and the first moving device 21c of the first cleaning device 21, respectively. The second cleaning device 22 is disposed so that the second moving device 22c is symmetrical with the first moving device 21c with the center of the substrate W held by the chuck 20 as the center of symmetry in plan view. The second pen sponge 22a is configured with performance different from that of the first pen sponge 21a, but the shape is the same as that of the first pen sponge 21a. The second pen sponge 22a is configured to have a higher cleaning performance than the first pen sponge 21a, for example, by using a material having a smaller average diameter of holes formed in the sponge than the first pen sponge 21a. With such a configuration, typically, the first pen sponge 21a is used for rough cleaning, and the second pen sponge 22a is used for finish cleaning. The second pen sponge 22a corresponds to a second cleaning member.

  Similar to the first self-cleaning device 15 of the cleaning machine 1A (see FIG. 1), the first self-cleaning device 25 includes a cleaning plate 25a, a pure water nozzle 25b, and a chemical solution nozzle 25c. Further includes a cleaning tank (not shown). The cleaning plate 25a is formed in a size suitable for removing the foreign matter adhering to the first pen sponge 21a, and a quartz plate is used in the present embodiment. The first self-cleaning device 25 presses the first pen sponge 21a against the cleaning plate 25a while applying pure water and / or a chemical solution to the first pen sponge 21a rotating around the axis, so that the first pen sponge 21a is pressed against the first pen sponge 21a. It is configured to remove and clean the adhered foreign matter.

  The second self-cleaning device 26 is configured in the same manner as the first self-cleaning device 25, and includes a cleaning plate 26a, a pure water nozzle 26b, and a chemical liquid nozzle 26c. (Not shown). In the second cleaning device 22, the cleaning plate 26a, the pure water nozzle 26b, and the chemical solution nozzle 26c correspond to the cleaning plate 25a, the pure water nozzle 25b, and the chemical solution nozzle 25c of the first self-cleaning device 21, respectively, and are the same as the corresponding members. It is configured. The second self-cleaning device 26 is disposed so that the cleaning plate 26a is symmetrical with the cleaning plate 25a with the center of the substrate W held by the chuck 20 as the center of symmetry in plan view.

  The cleaning machine 2 according to the present embodiment further includes a first surface chemical nozzle 145 that supplies a chemical when the surface WA of the substrate W held by the chuck 20 is cleaned with the first pen sponge 21a. And a first surface rinse nozzle 146 for supplying pure water, a second surface chemical nozzle 245 for supplying a chemical when the surface WA is washed with the second pen sponge 22a, and a second surface rinse nozzle 246 for supplying pure water. have.

  The chamber 40 is formed in a substantially rectangular parallelepiped shape, and is provided with a first shutter 40a, a second shutter 40b, and two carry-in / out shutters 40w. The first shutter 40a forms an opening through which the first arm 21b supporting the first pen sponge 21a and the first self-cleaning device 25 are taken in and out. The first shutter 40 a is provided at a position and size that allows the first arm 21 b that swings around the connection portion with the first moving device 21 c to be pulled out of the chamber 40. The second shutter 40b forms an opening through which the second arm 22b supporting the second pen sponge 22a and the second self-cleaning device 26 are taken in and out. In the present embodiment, the second shutter 40b is provided in such a manner that the swinging second arm 22b can be pulled out on the surface facing the first shutter 40a in plan view. The loading / unloading shutter 40w forms an opening for taking in and out the substrate W held in the robot hand 52 (see FIG. 4) and an opening for taking in and out the substrate W held in the robot hand 53 (see FIG. 4). There are two things to do. In the present embodiment, the two loading / unloading shutters 40w are respectively provided on two surfaces orthogonal to the surface of the chamber 40 in which the first shutter 40a and the second shutter 40b are provided in plan view. .

  The control device 250 is configured to control the holding and release of the substrate W by the chuck 20 and the rotation of the substrate W in the horizontal plane by controlling the operation of the chuck 20. The control device 250 is configured to control the rotation of the first pen sponge 21a and the second pen sponge 22a and the movement of the first moving device 21c and the second moving device 22c. The control device 250 is configured to be able to control the operation / stop of the first self-cleaning device 25 and the second self-cleaning device 26. Further, the control device 250 can control whether or not chemical liquid or pure water is supplied from the first surface chemical nozzle 145, the first surface rinse nozzle 146, the second surface chemical nozzle 245, and the second surface rinse nozzle 246. It is configured as follows. The control device 250 is configured to control the opening / closing of the two carry-in / out shutters 40w.

  The action of the washing machine 2 configured as described above is based on the action of the washing machine 1A (see FIG. 1). Below, the outline | summary of an effect | action of the washing machine 2 is demonstrated. In the process of loading the substrate W into the chamber 40, the first pen sponge 21 a located at the position of the first self-cleaning device 25 moves above the center of the substrate W held by the chuck 20. When the substrate W held by the chuck 20 rotates and the rotation speed reaches a predetermined rotation speed, the first pen sponge 21a is lowered and contacts the surface WA of the substrate W. When the first pen sponge 21a comes into contact with the surface WA, the surface WA is roughly cleaned by moving from the center of the rotating substrate W to the side edge. During the rough cleaning of the surface WA, the chemical solution is supplied from the first surface chemical nozzle 145 and / or pure water is supplied from the first surface rinse nozzle 146 to the surface WA as necessary. While the first pen sponge 21 a roughly cleans the surface WA, the second pen sponge 22 a is self-cleaned at the position of the second self-cleaning device 26.

  When the rough cleaning of the front surface WA is completed, the second pen sponge 22a at the position of the second self-cleaning device 26 is moved so that the first pen sponge 21a moves to the position of the first self-cleaning device 25 and replaces it. It moves above the center of the substrate W held by the chuck 20. Thereafter, like the first pen sponge 21a, the second pen sponge 22a descends to contact the surface WA and moves from the center of the rotating substrate W to the side edge. The moving direction of the second pen sponge 22a is opposite to the first pen sponge 21a. By the movement of the second pen sponge 22a in contact with the surface WA, the surface WA is subjected to finish cleaning. During the finish cleaning of the surface WA, the surface WA is supplied with a chemical solution from the second surface chemical nozzle 245 and / or pure water from the second surface rinse nozzle 246 as necessary. While the second pen sponge 22a finishes and cleans the surface WA, the first pen sponge 21a is self-cleaned at the position of the first self-cleaning device 25. When the finish cleaning of the front surface WA is completed, the second pen sponge 22a moves to the position of the second self-cleaning device 26, and the substrate W is carried out of the chamber 40.

  Returning to FIG. 4 again, the substrate cleaning apparatus 104 will be described. In the following description, reference is made to FIG. 1 when referring to the configuration of the cleaning machine 1A, and FIG. 5 when referring to the configuration of the cleaning machine 2. Of the devices provided in the substrate cleaning apparatus 104, the dryer 3 is not described in detail, but the substrate W cleaned by the cleaning device 2 is held by a spin chuck and rotated at high speed, or the surface is a rinse liquid. What moves a dry gas flow from the center of the board | substrate W to an outer edge, etc., rotating the covered board | substrate W is used.

  In the substrate cleaning apparatus 104, a cleaning machine 1AS is arranged below the cleaning machine 1AF, a cleaning machine 2S is arranged below the cleaning machine 2F, and a drying machine 3S is arranged below the drying machine 3F. The cleaning machine 1AF, the cleaning machine 2F, and the drying machine 3F are arranged in this order in a straight line on the same plane. The washing machine 1AS, the washing machine 2S, and the drying machine 3S are linearly arranged in this order on the same plane. In the present embodiment, the substrate W first cleaned by the cleaning machine 1AF is, in principle, cleaned by the cleaning machine 2F and finally dried by the drying machine 3F. The cleaning machine 2F and the drying machine 3F are arranged in the first cleaning line LF. On the other hand, the substrate W first cleaned by the cleaning machine 1AS is basically cleaned by the cleaning machine 2S and finally dried by the drying machine 3S, and the cleaning machine 1AS and the cleaning machine 2S are finally cleaned. The dryer 3S is disposed in the second cleaning line LS. Here, the cleaning line is a movement path of the substrate W when processing (cleaning, drying, etc.) of one substrate W is performed by a plurality of devices in principle, and the substrate W moves to another cleaning line in the middle. It does not prevent it.

  The first robot hand 52 is disposed in a space between the upper and lower cleaning machines 1AF and 1AS and the upper and lower cleaning machines 2F and 2S. The first robot hand 52 can change its direction and move up and down by a moving mechanism (not shown) so that it can access the inside of each washing machine 1AF, 1AS, 2F, 2S. It is configured. The second robot hand 53 is disposed in a space between the cleaning machines 2F and 2S disposed above and below and the dryers 3F and 3S disposed above and below. The second robot hand 53 can change its direction and move up and down by a moving mechanism (not shown), and can access the inside of each of the cleaning machines 2F and 2S and the drying machines 3F and 3S. It is configured to be able to.

  The first robot hand 52 has an arm that is larger than the diameter of the substrate W in the longitudinal direction (typically one size larger than the diameter of the substrate W) and smaller than the diameter of the substrate W in the width direction. The arm of the first robot hand 52 has a tip that is shaped like a tip, and a grip portion (not shown) that can be gripped with the outer edge of the substrate W interposed therebetween is provided at the top. The second robot hand 53 has the same configuration as the first robot hand 52.

  The substrate cleaning apparatus 104 configured as described above is usually in parallel with the cleaning / drying processing of the substrate W in the first cleaning line LF (the cleaning machine 1AF, the cleaning machine 2F, and the drying machine 3F). In the second cleaning line LS (cleaning machine 1AS, cleaning machine 2S, drying machine 3S), the substrate W is cleaned and dried. In the first cleaning line and the second cleaning line, the same substrate W is processed, which includes rough cleaning with the first roll sponge 11a, finish cleaning with the second roll sponge 12a, and the first pen. Rough cleaning with the sponge 21a, finishing cleaning with the second pen sponge 22a, and drying.

  Since the substrate cleaning apparatus 104 is provided with two cleaning members in one module for each of the cleaning machines 1A and 2, when performing the two-stage cleaning of the rough cleaning and the final cleaning, the substrate cleaning apparatus 104 There is no interference. For example, in a conventional apparatus in which one cleaning member is provided in one module, a part of another cleaning line is used to perform two-stage cleaning, and the processing capacity is reduced. . The substrate cleaning apparatus 104 can double the number of substrates W that can be cleaned and dried by a single apparatus without increasing the size of the apparatus, thereby improving the throughput.

  In the above description of the substrate cleaning apparatus 104, since both the cleaning machine 1A and the cleaning machine 2 are provided with two cleaning members in one module, one of the cleaning machine 1A and the cleaning machine 2 performs substrate cleaning. The other corresponds to an additional substrate cleaning machine which is a form of the additional substrate processing unit. Note that two cleaning members may be provided in at least one module in accordance with a request for cleaning the substrate W. For example, the cleaning machine 1A may include one roll sponge, and the cleaning machine 2 may include two pen sponges 21a and 22a. In this case, the cleaning machine 2 corresponds to the (first or second) substrate cleaning machine, and the cleaning machine 1A corresponds to the (first or second) additional board cleaning machine. That is, the additional substrate cleaning machine does not ask the number of cleaning members included in one module. The substrate cleaning apparatus 104 may include only a dryer as an additional substrate processing unit without including the additional substrate cleaning machine.

  In the above description of the cleaning machine 2, the cleaning performance of the first pen sponge 21a and the second pen sponge 22a is different, and the operation of the cleaning machine 2 is similar to that of the cleaning machine 1A. The cleaning performance of the sponge 21a and the second pen sponge 22a is configured to be equivalent, and the operation of the cleaning machine 1 (the substrate W cleaned with the first pen sponge 21a and the substrate W cleaned with the second pen sponge 22a are replaced). It is good also as following. In addition, regardless of whether the cleaning machine 2 conforms to the action of the cleaning machine 1A or the action of the cleaning machine 1, the substrate does not constitute a component of the substrate cleaning apparatus 104 and acts independently. You may comprise as a washing machine.

  In the above description of the cleaning machine 2, regarding the arrangement of the first cleaning device 21 and the second cleaning device 22, the first moving device 21 c and the second moving device 22 c have the substrate W held by the chuck 20 in plan view. The first arm 21b and the second arm 22b in the self-cleaning position are arranged so as to be symmetric with respect to the center of the center as shown in FIG. 6A. As shown, the first moving device 21c and the second moving device 22c may be adjacent to each other, and the first arm 21b and the second arm 22b at the self-cleaning position may be arranged to be orthogonal to each other. In this case, since the rotation centers of the first arm 21b and the second arm 22b are different, the locus of the first pen sponge 21a and the locus of the second pen sponge 22a are not the same. Alternatively, as shown in FIG. 6B, the position of the first pen sponge 21a when the first cleaning device 21 is retracted is the same as the position of the second pen sponge 22a when the second cleaning device 22 is retracted. It is good also as arrange | positioning so that. In this case, the first pen sponge 21a and the second pen sponge 22a can easily share the self-cleaning device.

The substrate cleaning apparatus 104 described above (or the cleaning machines 1, 1A, 2 as independent substrate cleaning machines) typically has a substrate processing together with a CMP (chemical mechanical polishing) apparatus or a copper plating apparatus. Implemented in the device.
FIG. 7 is a plan view showing the overall configuration of the substrate processing apparatus 100 on which the substrate cleaning apparatus 104 is mounted. In the following description, when referring to the configuration of the substrate cleaning apparatus 104, reference is made to FIG. 4 or FIG. 5 as appropriate. The substrate processing apparatus 100 includes a substantially rectangular housing 101. The inside of the housing 101 is a load / unload unit 102 partitioned by partition walls 101a, 101b, and 101c, a polishing unit 103 for polishing a substrate, and a polishing unit. The above-described substrate cleaning apparatus 104 for cleaning a subsequent substrate is provided. The substrate processing apparatus 100 also includes a control device 60 that controls the operation of each unit.

  The load / unload unit 102 includes a cassette 81 that stocks substrates, and a transfer robot 82 that transfers the substrates from the cassette 81 to the polishing unit 103 or from the substrate cleaning apparatus 104 to the cassette 81. The transfer robot 82 has two hands up and down. For example, the upper hand is used when returning the substrate to the cassette 81, and the lower hand is used when transferring the substrate before polishing. It is configured to be able to use different hands.

  The polishing unit 103 has four polishing apparatuses 83 having substantially the same configuration. Each polishing apparatus 83 includes a polishing table 83a having a polishing surface, a top ring 83b that can hold the substrate and can be pressed against the polishing table 83a, and a polishing liquid such as a slurry or a dressing on the polishing table 83a. A mixed liquid of a liquid (for example, pure water) and a gas (for example, nitrogen) is atomized into a polishing liquid supply nozzle 83c for supplying a liquid (for example, water), a dresser 83d for performing dressing of the polishing table 83a, and the like. And an atomizer 83e that sprays the polishing surface from one or a plurality of nozzles. The polishing apparatus 83 includes a lifter 83f that can be moved up and down and a pusher 83g that can be moved up and down. The polishing apparatus 83 adjacent to the transfer robot 82 has a reversing machine 83h that can receive and reverse the substrate from the transfer robot 82.

  Each polishing device 83 brings the substrate held by the top ring 83b into contact with the polishing table 83a, and supplies the polishing liquid from the polishing liquid supply nozzle 83c to the polishing table 83a while moving the polishing table 83a and the top ring 83b at a predetermined rotation speed. By rotating, the surface of the substrate can be polished. In addition, each polishing apparatus 83 places the polished substrate on the lifter 83f, while dressing the surface of the polishing table 83a with a dresser 83d, and the substrate placed on the lifter 83f via the pusher 83g. It is configured to be transferred to the robot hand 52 of the substrate cleaning apparatus 104.

  The substrate processing apparatus 100 configured as described above performs the following operations. The substrate placed in the cassette 81 is taken out by the transfer robot 82 and transferred to the reversing machine 83h of the polishing unit 103. The substrate is reversed by the reversing machine 83h and then transferred to the lifter 83f. After the top ring 83b is moved above the lifter 83f, the substrate is pushed up by the lifter 83f, and the substrate is attracted to the top ring 83b. Thereafter, the substrate is brought into contact with the polishing table 83a, and the supply of the polishing liquid from the polishing liquid supply nozzle 83c to the polishing table 83a is started. At the same time, the polishing table 83a and the top ring 83b are rotated at a predetermined rotation speed to Grind. After polishing the surface of the substrate by a predetermined amount, the substrate is polished by supplying pure water from a pure water supply nozzle (not shown) instead of supplying the polishing liquid from the polishing liquid supply nozzle 83c. After polishing the substrate while supplying pure water for a predetermined time, the top ring 83b is raised to separate the substrate from the polishing table 83a, and the substrate is placed on the lifter 83f. At this time, the polishing cloth affixed to the polishing table 83a is polished by the dresser 83d, and the polishing cloth is conditioned. When the substrate is placed on the lifter 83f, the lifter 83f is moved horizontally to a position where the pusher 83g is located and lifted by the pusher 83g, and then the robot hand 52 of the substrate cleaning apparatus 104 receives the substrate.

  The robot hand 52 that has received the substrate W performs the above-described cleaning of the substrate W in the substrate cleaning apparatus 104. The substrate W that has been cleaned and dried by the substrate cleaning apparatus 104 is taken out of the substrate cleaning apparatus 104 by the transfer robot 82 and stored in a cassette 81 that stocks the cleaned substrate W. As described above, the substrate processing apparatus 100 including the substrate cleaning apparatus 104 can increase the number of processed substrates W and can improve the throughput.

  In the above description, the substrate processing apparatus 100 is mounted with the substrate cleaning apparatus 104. However, instead of the substrate cleaning apparatus 104, one or a plurality of cleaning machines 1, 1A, and 2 are arbitrarily selected and mounted individually. It is good to do.

  In the above description, the cleaning machine 1 is provided with the pre-cleaning device (self-cleaning devices 15 and 16) for each of the two cleaning members (roll sponges 11a and 12a). It is good also as sharing a washing | cleaning apparatus. In particular, if there is no distinction between rough cleaning and finish cleaning for the two cleaning members, it is easy to share them. The same applies to the washing machines 1A and 2.

  In the above description, the first surface to be cleaned by the first cleaning device 11 and the second cleaning device 12 is the surface WA of the substrate W. However, the cleaning is performed by the first cleaning device 11 and the second cleaning device 12. The first surface may be the back surface WB and the second surface may be the surface WA.

  In the above description, the first cleaning devices 11 and 21 and the second cleaning devices 12 and 22 are provided above the substrate W held by the substrate holding device (roller 10 and chuck 20). However, it may be provided below the substrate W held by the substrate holding device.

1, 1A Cleaning machine 2 Cleaning machine 10 Roller 11 First cleaning device 11a First roll sponge 12 Second cleaning device 12a Second roll sponge 15 First self-cleaning device 16 Second self-cleaning device 20 Chuck 21 First cleaning device 21a First pen sponge 22 Second cleaning device 22a Second pen sponge 25 First self-cleaning device 26 Second self-cleaning device 40 Chamber 41 First drawing mechanism 42 Second drawing mechanism 50 Control device 83 Polishing device 100 Substrate processing device 104 Substrate Cleaning device W Substrate WA Front side WB Back side

Claims (8)

A substrate holding device for holding a substrate having a first surface and a second surface opposite to the first surface;
A first cleaning device having a first cleaning member that contacts the first surface of the substrate held by the substrate holding device to clean the first surface;
A second cleaning device having a second cleaning member that contacts the first surface of the substrate held by the substrate holding device and cleans the first surface;
When one of the first cleaning member and the second cleaning member is cleaning the first surface of the substrate held by the substrate holding device, the other is held by the substrate holding device. A control device for controlling the first cleaning device and the second cleaning device so as to be located away from the substrate;
Substrate cleaning machine. A pre-cleaning device that cleans the first cleaning member and the second cleaning member before being used for cleaning the first surface;
The pre-cleaning device is configured to determine which one of the first cleaning member and the second cleaning member is not cleaning the first surface of the substrate held by the substrate holding device. Control to wash with;
The substrate cleaning machine according to claim 1. A chamber for housing the substrate holding device, the first cleaning device, the second cleaning device, and the pre-cleaning device;
At least one of the first cleaning member and the second cleaning member, and a drawing mechanism capable of pulling out the pre-cleaning device from the chamber;
The substrate cleaning machine according to claim 2. The cleaning level when the first surface is cleaned with the second cleaning member is higher than the cleaning level when the first surface is cleaned with the first cleaning member. A first cleaning device and the second cleaning device are configured;
The substrate cleaning machine according to any one of claims 1 to 3. After the control device holds the substrate by the substrate holding device, the first cleaning member cleans the first surface, and then the second cleaning member cleans the first surface. From the start of the cleaning of the first surface by the first cleaning member to the completion of the cleaning of the first surface by the second cleaning member, the holding of the substrate by the substrate holding device is maintained. Controlling the substrate holding device, the first cleaning device, and the second cleaning device;
The substrate cleaning machine according to any one of claims 1 to 4. A plurality of substrate cleaners according to any one of claims 1 to 5;
A first substrate cleaner of the plurality of substrate cleaners is disposed in a first cleaning line;
A second substrate cleaner of the plurality of substrate cleaners is disposed on a second cleaning line different from the first cleaning line;
A first additional substrate processing unit disposed in the first cleaning line;
A second additional substrate processing unit disposed in the second cleaning line;
Substrate cleaning device. A method for manufacturing a cleaned substrate, which is the substrate after cleaning, by cleaning the substrate before cleaning, which is the substrate before cleaning, with the substrate cleaning machine according to any one of claims 1 to 5. ;
A substrate holding step of holding the substrate by the substrate holding device;
A first cleaning step of cleaning the substrate held by the substrate holding device with the first cleaning member;
A retracting step of retracting the first cleaning member from the substrate while the substrate holding device holds the substrate after the first cleaning step;
A second cleaning step of continuously cleaning the substrate held by the substrate holding device with the second cleaning member after the retracting step;
A method for manufacturing a cleaned substrate. A substrate cleaning machine according to any one of claims 1 to 5;
A substrate processing machine for processing the substrate before cleaning in the substrate cleaning machine;
Substrate processing equipment.

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