KR20150103465A - Chamber structure of substrate cleaning apparatus - Google Patents

Abstract

The present invention relates to a multistage device for cleaning a wafer having completed a chemical mechanical polishing process. The multistage device for cleaning a wafer having completed a chemical mechanical polishing process comprises: a first-first cleaning module for cleaning the wafer having completed the chemical mechanical polishing process; a first-second cleaning module stacked and arranged above the first-first cleaning module to clean the wafer having completed the chemical mechanical polishing process; a second-first cleaning module for cleaning the wafer cleaned in any one among the first-first module and the first-second module; a second-second cleaning module stacked and arranged above the second-first cleaning module to clean the wafer cleaned in any one among the first-first cleaning module and the first-second cleaning module; and a moving means for moving the wafer to one or more among the first-first cleaning module and the first-second cleaning module and to one or more among the second-first cleaning module and the second-second cleaning module. Provided is a multistage device for cleaning a wafer, wherein cleaning can done in a short time by conducting more various cleaning processes while occupying only a designated space in a semiconductor-manufacturing line as a cleaning stage depending on the state of foreign materials adhering to the wafer can be adjusted.

Description

CHAMBER STRUCTURE OF SUBSTRATE CLEANING APPARATUS [0002]

The present invention relates to a multistage cleaning apparatus for a wafer on which a chemical mechanical polishing process has been carried out. More specifically, the present invention relates to a multistage cleaning apparatus for cleaning a wafer by multi-stage cleaning using a single cleaning apparatus, ≪ / RTI >

The chemical mechanical polishing (CMP) apparatus is a device for performing a wide-area planarization that removes a height difference between a cell region and a peripheral circuit region due to unevenness of a wafer surface generated by repeatedly performing masking, etching, To improve the surface roughness of the wafer due to contact / wiring film separation and highly integrated elements, and the like.

The chemical mechanical polishing process is a process of planarizing the deposition surface of copper, oxide layer, etc. of the wafer so as to reach a certain thickness. Since abrasive particles, slurry, etc. are deposited on the polishing surface, the cleaning process of the polishing surface is very important.

As shown in Fig. 1, the chemical mechanical polishing apparatus X1 supplies a wafer W to a carrier head with a supply arm, presses the wafer W onto a rotating polishing pad P, And at the same time, a chemical polishing process is performed by the slurry supplied to the wafer W. The wafer W positioned on the bottom surface of the carrier head H and finished with the CMP process is cleaned while sequentially transferring the region X2 in which the substrate cleaning apparatus 9 is disposed in order to remove foreign matters adhering to the surface.

The substrate cleaning apparatus 9 supplies the wafer W to the respective cleaning modules C1, C2, and C3 by the transfer arm to clean and remove foreign matter adhering to the wafer W during the CMP process. At this time, a gripper Gr grasps the wafer W and moves along the transfer rail Rx (99d) between the cleaning modules C1, C2, and C3 while the cleaning modules C1, C2, .

When the wafer W is subjected to the cleaning process while uniformly passing through the cleaning modules C 1, C 2 and C 3 because the slurry or abrasive grains on the surface of the wafer after the CMP process are fixed, The cleaning state of the wafer through the cleaning modules C1, C2, and C3 may not be consistent. Therefore, conventionally, the cleaning time required by each of the cleaning modules C1, C2, and C3 is longer than necessary, and the cleaning is not completely performed.

In addition, the wafer W after the CMP process is supplied to the first cleaning module C1 to perform the first cleaning process, and waits for the wafer W to enter the second cleaning module C2. When the wafer that has been subjected to the second cleaning process in the second cleaning module C2 is transferred to the next process and the second cleaning module C2 is emptied, 2 cleaning module C2 to perform the second cleaning process. Likewise, the wafer W that has undergone the second cleaning process in the second cleaning module C2 is supplied to the third cleaning module C3 to be subjected to the subsequent third cleaning process in the second cleaning module C2 do. Then, when the third cleaning module C3 is emptied, the wafer that has been waiting in the second cleaning module C2 is supplied to the third cleaning module C3, and the cleaning process is performed in such a manner that the third cleaning process is performed .

However, the time required for the cleaning process performed in each of the cleaning modules C1, C2, C3 is not all the same, and there is a difference therebetween. For example, if it takes 30 seconds for the cleaning time in the first cleaning module C1 and takes 45 seconds for the cleaning time in the second cleaning module C2, After the cleaning process is completed, the wafer waits for 15 seconds until the second cleaning process of the wafer being cleaned in the second cleaning module C2 is completed, and then enters the second cleaning module C2. Therefore, the cleaning process in each of the cleaning modules C1, C2, and C3 of the wafer can be performed based on the cleaning process time of the cleaning module that requires the longest cleaning time among the cleaning modules C1, C2, and C3 There is a problem that the cleaning time is unnecessarily long.

On the other hand, the cleaning process of the wafer W having completed the CMP process includes a noncontact type cleaning process, a contact type cleaning process, and a rinsing and drying process. However, in the contact type cleaning process using a brush, which is a material for immersing the water disclosed in Korean Patent Registration No. 10-0918894, there arises a problem that scratches or the like are caused on the surface of the wafer by the particles wiped from the wafer into the brush. Therefore, there is a great urgent need to clean the wafer by a non-contact cleaning process alone.

In addition, since the space occupied by the CMP equipment and the cleaning equipment in the semiconductor manufacturing line is determined, it is possible to satisfy the above-mentioned requirement with a compact cleaning equipment within a range that does not deviate from the conventional space defined by the semiconductor manufacturing line A need is also being sought.

SUMMARY OF THE INVENTION The present invention has been made in view of the above technical background, and it is an object of the present invention to provide a multi-stage cleaning process for removing foreign matters on a wafer while performing a chemical mechanical polishing process using one cleaning device, So as to be able to carry out the cleaning of the wafer.

At the same time, the object of the present invention is to make it possible to completely remove a foreign object on a wafer by a multi-stage cleaning process by a compact cleaning facility in a space occupied by CMP equipment and cleaning equipment in a semiconductor manufacturing line.

Another object of the present invention is to shorten the cleaning time and improve the efficiency of the cleaning process by minimizing the waiting time in the multistage cleaning process for removing the foreign substances on the wafer while the chemical mechanical process is performed.

Another object of the present invention is to make it possible to remove foreign matter cleanly even when cleaning a wafer subjected to a chemical mechanical process by a non-contact cleaning method.

In order to achieve the above object, the present invention provides an apparatus for multi-stage cleaning of wafers subjected to a chemical mechanical polishing process, comprising: a 1-1 cleaning module for cleaning the wafer subjected to the chemical mechanical polishing process; A 1-2 cleaning module disposed on the upper side of the 1-1 cleaning module to clean the wafer subjected to the chemical mechanical polishing process; A second-1 cleaning module for cleaning the wafer cleaned in either the 1-1 cleaning module or the 1-2 cleaning module; A second-2 cleaning module disposed on the upper side of the second-1 cleaning module to clean the wafer cleaned in any one of the 1-1 cleaning module and the 1-2 cleaning module; A moving means for moving the wafer by at least one of the 1-1 cleaning module and the 1-2 cleaning module, and the 2-1 cleaning module and the 2-2 cleaning module; And a cleaning device for cleaning the wafer.

This is because the 1-1 cleaning module and the 1-2 cleaning module are stacked on each other and the 2-1 cleaning module and the 2-2 cleaning module are stacked on each other, The wafer is subjected to a cleaning process in at least one of the 1-1 cleaning module and the 1-2 cleaning module, and then the cleaning process is performed in at least one of the 2-1 cleaning module and the 2-2 cleaning module It is possible to control the cleaning step according to the state where the foreign matter is fixed to the wafer at that time so that the cleaning process can be performed while occupying only a predetermined space in the semiconductor manufacturing line.

In other words, by moving the wafer horizontally as well as horizontally, the moving means moves the wafer in one or more of the first 1-1 cleaning modules and the 1-2 first cleaning modules stacked in two layers while occupying one floor area, And then performing the next cleaning process on at least one of the 2-1 cleaning module and the 2-2 cleaning module stacked in two layers while occupying one floor area according to the cleaning state of the wafer, It is possible to perform various cleaning processes depending on the contamination state of the wafers in the two to four cleaning processes in the space in which the two predetermined cleaning processes are performed so that the slurry and the abrasive particles So that it can be cleanly and cleanly removed.

For example, the moving means moves the wafer to any one of the 1-1 cleaning module and the 1-2 cleaning module so that the wafer is firstly subjected to a cleaning process, and then the 2-1 The cleaning process of the wafer can be performed while moving the wafer to any one of the cleaning module and the second to the second cleaning module while moving the wafer through a path that is subjected to a secondary cleaning process.

Alternatively, the moving means moves the wafer to any one of the 1-1 cleaning module and the 1-2 cleaning module, and after the cleaning process, the 1-1 cleaning module and the 1- The cleaning process of the wafer can be performed while moving the wafer by moving the wafer to another one of the two cleaning modules and moving the wafer through the cleaning process.

That is, the wafer cleaning apparatus configured as described above is provided with four (4) cleaning units each comprising a 1-1 cleaning module, a 1-2 cleaning module, a 2-1 cleaning module, and a 2-2 cleaning module It is possible to clean two or four cleaning modules in the cleaning module while selectively passing the wafers, thereby making it possible to surely clean the foreign substances adhering to the wafers.

Accordingly, it is an object of the present invention to provide an apparatus and method for cleaning a semiconductor device, which has a compact structure that can be installed in a space occupied by a CMP apparatus and a cleaning apparatus in a semiconductor manufacturing line, Effect can be obtained.

On the other hand, before the wafer cleaned in any one of the 1-1 cleaning module and the 1-2 cleaning module is supplied to the other of the 2-1 cleaning module and the 2-2 cleaning module, A first buffer module for mounting a wafer; And the like.

Accordingly, even if there is a deviation in the process time of the 1-1 cleaning module, the 1-2 cleaning module, the 2-1 cleaning module, and the 2-2 cleaning module, The waiting time of the multi-step cleaning process is minimized by causing the first buffer module to wait for the wafer after the cleaning process so that the subsequent cleaning process is performed continuously even if the process time required by the subsequent cleaning module is longer Thus, an advantageous effect of shortening the cleaning time and improving the efficiency of the cleaning process can be obtained.

In this case, the first buffer module preferably has a space for mounting two or more wafers. This allows the first buffer module to wait two or more wafers that have undergone the first cleaning process in the first cleaning module for a shorter period of time, thereby enabling the continuous cleaning process in the first cleaning module to be performed .

Here, it is preferable that the first buffer module has a space for vertically stacking two or more wafers so as to occupy a narrower space.

The first buffer module is movable up and down so that even if the moving means approaches the first buffer module at a constant height, a plurality of wafers are stacked on each layer of the first buffer module without overlapping and the wafer is transferred There is an advantage that it becomes possible to go.

The first buffer module receives the wafer from any one of the 1-1 cleaning module and the 1-2 cleaning module and receives the wafer from any one of the 2-1 cleaning module and the 2-2 cleaning module And can be installed so as to reciprocate so as to supply the wafer. Accordingly, when the wafer is mounted on the first buffer module, the first buffer module moves to a position close to the 1-1 cleaning module and the 1-2 cleaning module, and the wafer is transferred from the first buffer module to the 2- When the first buffer module is supplied to the first cleaning module or the second-second cleaning module, the first buffer module moves to a position close to the second-first cleaning module and the second-second cleaning module, thereby minimizing the movement path of the moving means for transferring the wafer The process efficiency can be further increased.

Preferably, the first buffer module supplies liquid such as pure water to maintain the wet state of the wafer on which the wafer is placed. This makes it possible to prevent the wafer from being dried and damaged during the cleaning waiting time.

On the other hand, if the processing times of the 1-1 cleaning module, the 1-2 cleaning module, the 2-1 cleaning module and the 2-2 cleaning module are long, Or more. As a result, a cleaning process with a long processing time is performed in two or more cleaning modules while the multistage cleaning process of the wafers is continuously performed, so that the multistage cleaning process of the whole wafer can be continuously cleaned without complications.

As in the case of the No. 1-1 cleaning module and the No. 1-2 cleaning module sharing the same floor area and the No. 2 cleaning module and the No. 2 cleaning module, A third cleaning module for cleaning the wafer cleaned in any one of the cleaning modules; A third-second cleaning module disposed on the upper side of the third-first cleaning module for cleaning the wafer cleaned in either the second-first cleaning module or the second-cleaning module; Wherein the moving means is configured such that, when the wafer is cleaned secondarily in any one of the 2-1 cleaning module and the 2-2 cleaning module, the third-1 cleaning module and the third- The wafer may be configured to move the wafer to a path through which the wafer is cleaned.

At this time, the wafer passes through any one of the 1-1 cleaning module and the 1-2 cleaning module, and the 2-1 cleaning module and the 2-2 cleaning module, It may be cleaned only in an unused contactless manner.

This is because the surface of the wafer is cleaned while contacting the wafer with a high frictional force by means of a brush while foreign materials fixed on the surface of the wafer are cleaned by a multistage cleaning process which has been subjected to a chemical mechanical polishing process. This is because abrasive particles or the like on the brush scrape off the surface of the wafer and cause damage by scratches. Therefore, when cleaning is performed in a non-contact manner, the problem of scratching the wafer due to abrasive particles removed from the wafer can be solved.

That is, even if the number of the cleaning modules to which one wafer is subjected is increased, the cleaning process of the wafers can be performed in a larger number of cleaning modules without delaying the time required for one wafer to be completely cleaned in the predetermined space It is possible to obtain an effect that the wafer can be cleanly cleaned in a noncontact manner with foreign matters adhering to the surface of the wafer during the chemical mechanical polishing process.

At least one of the 2-1 cleaning module, the 2-2 module, the 3-1 cleaning module, and the 3-2 cleaning module includes at least one of a rinsing process and a drying process .

On the other hand, the cleaning state of the wafer is checked between the 1-1 cleaning module and the 2-1 cleaning module, and the moving means moves the cleaning path of the wafer in accordance with the inspected cleaning state of the wafer, . This makes it possible to prevent the wafer from being subjected to a cleaning process more than necessary, or omit the necessary cleaning process, thereby causing defective cleaning.

That is, the terms "cleaning module" and similar terms in the present description and claims are not limited to cleaning wafers, but include both modules that rinse or clean and rinse the wafer after drying. For example, the '3 rd clean module' and the '3 rd cleaner module' include a module configured to rinse or dry a wafer.

According to another aspect of the present invention, there is provided a washing machine comprising: a 1-1 cleaning module; a 1-2 cleaning module stacked on the upper side of the 1-1 cleaning module; And a second-2 cleaning module stacked on the upper side of the second-1 cleaning module, wherein the first-1 cleaning module comprises a first- A first cleaning step of cleaning the wafer from any one of the first cleaning module and the first cleaning module; An inspection step of inspecting a cleaning state of the wafer subjected to the first-order cleaning step; The cleaning method according to any one of claims 1 to 3, further comprising the steps of: a first cleaning module A second cleaning step of cleaning the wafer from any one of the modules; And a cleaning step of cleaning the wafer.

According to the present invention, the 1-1 cleaning module and the 1-2 cleaning module are stacked on each other, and the 2-1 cleaning module and the 2-2 cleaning module are stacked on each other, The wafer is subjected to a cleaning process by at least one of the 1-1 cleaning module and the 1-2 cleaning module by the moving means and then the wafer is cleaned by at least one of the 2-1 cleaning module and the 2-2 cleaning module By performing the cleaning process, the cleaning process of the wafer can be variously adjusted according to the contamination state of the wafer, so that it is possible to obtain a favorable effect of cleaning the wafer more cleanly while occupying only the space defined by the semiconductor manufacturing line.

That is, the present invention is characterized in that at least one of the first-first cleaning module and the first-second cleaning module stacked in two layers occupying one floor area by the horizontal and vertical movement of the wafer by the moving means And then the next cleaning process is performed on at least one of the 2-1 cleaning module and the 2-2 cleaning module stacked in two layers while occupying one floor area according to the cleaning state of the wafer Thus, two to four cleaning processes in the space in which the two predetermined cleaning processes are conventionally performed can be selected according to the contamination state of the wafers, so that the cleaning process can be performed. Therefore, during the chemical mechanical polishing process, It is possible to obtain an effect that the particles can be more reliably and cleanly removed.

In addition, the present invention provides a cleaning module that is formed by stacking two layers in a space occupied by a CMP cleaning apparatus in an existing semiconductor manufacturing line, so that the foreign matter on the wafer can be maintained in a multi- The present invention is advantageous in that a compact structure that can be completely removed by the cleaning process of the first embodiment is realized.

The present invention is characterized in that the wafer cleaned in any one of the 1-1 cleaning module and the 1-2 cleaning module is supplied to the other of the 2-1 cleaning module and the 2-2 cleaning module And a first buffer module for mounting the wafer before the cleaning process is completed, wherein the process time required for the 1-1 cleaning module, the 1-2 cleaning module, the 2-1 cleaning module, and the 2-2 cleaning module Even if there is a deviation from each other, the wafers having completed the cleaning process in any one of the cleaning modules are made to wait in the first buffer module, so that even if the process time required in the next cleaning module is longer, So that the waiting time of the multistage cleaning process can be minimized, shortening the cleaning time and improving the efficiency of the cleaning process.

Further, since the cleaning is performed in more cleaning modules than in the prior art, the cleaning process of the wafer can be cleaned only by a non-contact brushless method (for example, a nozzle jetting method) It is possible to solve the problem that the surface of the wafer is damaged by the scratch due to the abrasive grains on the brush.

1 is a plan view showing a conventional multistage cleaning apparatus of a chemical mechanical polishing apparatus and a wafer on which a CMP process has been performed;
2 is a plan view showing a multi-stage cleaning apparatus according to an embodiment of the present invention of a chemical mechanical polishing apparatus and a wafer on which a CMP process is performed;
Fig. 3 is a perspective view showing the configuration of the moving means of Fig. 2,
Fig. 4 is a perspective view schematically showing a structure in which a moving means is installed in the multistage cleaning apparatus of Fig. 2,
5 is a view for explaining the operation principle of the moving means of FIG. 3,
FIG. 6 is a perspective view showing the buffer module of FIG. 2,
Fig. 7 is a view showing the cleaning path of the wafer according to the inspection result of the contamination state of the wafer. Fig.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are not described in detail to avoid obscuring the subject matter of the present invention.

As shown in the drawing, a multi-stage cleaning apparatus 100 for a wafer on which a CMP process has been carried out according to an embodiment of the present invention includes a moving (moving) process for transferring a wafer W subjected to a chemical mechanical polishing (CMP) A plurality of cleaning modules C11, C12, C21, C22, C31 and C32 C for cleaning the wafer W in multiple steps according to the cleaning state of the wafer W, A buffer module 10, 10 'for causing a wafer W to be cleaned before it is placed to stand by for the first time due to a deviation in each cleaning time in the cleaning module C, (901, 902, 903, 90) for inspecting the inspection object.

4, the two cleaning modules C11, C12, C21, C22, C31, and C32, which share one bottom surface area, are stacked and arranged in a predetermined space, It is possible to arrange the cleaning module C in which the cleaning process is performed.

The first cleaning module C1 disposed at the first of the cleaning modules C comprises a 1-1 cleaning module C11 located in the lower layer and a 1-2 cleaning module C12 located in the upper layer. Various types of cleaning devices may be installed in the 1-1 cleaning module C11 and the 1-2 cleaning module C12. For example, the cleaning solution may be sprayed to blow the surface of the wafer W with a high pressure A cleaning device may be installed. At this time, before the chemical mechanical polishing process enters the 1-1 cleaning module C11 and the 1-2 cleaning module C12, the contamination state of the wafer W is checked by the first inspection means 901 It is preferable that the cleaning method of the wafer is changed according to the degree of contamination according to the result of the inspection. Therefore, if the pressure for spraying the cleaning liquid in the 1-1 cleaning module C11 and the 1-2 cleaning module C12 are different Can be set.

The second cleaning module C2 spaced apart from the first cleaning module C1 in the horizontal direction also includes the second-first cleaning module C21 located in the lower layer and the second cleaning module C21 located in the upper layer in the same manner as the first cleaning module C1, 2 cleaning module C22. Various types of cleaning devices may be installed in the 2-1 cleaning module C21 and the 2-2 cleaning module C22. For example, a cleaning device for cleaning the surface of the wafer W in the form of a brush is installed Or a cleaning device which is similar to the first cleaning module C1 but which tilts the angle of the cleaning liquid sprayed on the surface of the wafer so as to apply a force in the direction of shearing to the fixed foreign substances to remove the foreign substances fixed thereto in a non- . Although the same cleaning device may be provided in the 2-1 cleaning module C21 and the 2-2 cleaning module C22, the same cleaning device may be installed between the first cleaning module C1 and the second cleaning module C2, The angle of the cleaning liquid to be sprayed onto the second-1 cleaning module C21 and the spray pressure of the cleaning liquid to be sprayed into the second cleaning module C22 are different from each other so that the other cleaning process is performed according to the cleaning state of the wafer inspected by the means 902 Can be set differently.

The third cleaning module C3 spaced from the second cleaning module C2 in the horizontal direction is also provided in the third cleaning module C31 located in the lower layer in the same manner as the first cleaning module C1 and the second cleaning module C2, And a third-second cleaning module C32 located on the upper layer. Various types of cleaning devices may be installed in the 3-1 cleaning module C31 and the 3-2 cleaning module C32. For example, a device for rinsing and drying the surface of the wafer W may be installed have. When the rinsing and drying process performed in the third cleaning module C3 takes longer time than the cleaning process performed in the other cleaning modules C11-C22, the same cleaning process (for example, a rinsing and drying process) is performed The cleaning device may be installed in both the 3-1 cleaning module C31 and the 3-2 cleaning module C32.

As described above, since the plurality of cleaning modules C are stacked and formed so as to share one floor area, an environment in which various cleaning processes can be performed in a predetermined space is provided, and before the cleaning process is performed, Since the cleaning process of the wafer is performed based on the result of the inspection by the inspection means 90, the cleaning of the wafer can be more complete and clean. In addition, the cleaning process of the wafer in a predetermined space is performed in various forms in accordance with the cleaned state of the wafer, so that optimal cleaning can be performed. Therefore, the surface of the wafer can be cleanly cleaned only by the non-contact type cleaning method in which the contact type cleaning method for causing scratches on the surface of the wafer is excluded.

The moving means Go moves the grippers Gr1, Gr2 and Gr3 between the cleaning modules C11 to C32 by picking up the wafers W one by one at the predetermined position 99. The grippers Gr1, Gr2 and Gr3 are horizontally moved (88x) along the horizontal paths Rx1 and Rx2 formed in the horizontal direction in the guide frame, and at the same time, the upper and lower paths Ry (88y), and independently rotate 180 degrees (88r) can be performed independently. For example, each of the grippers Gr1, Gr2 and Gr3 is rotated (88r) by the third motor M3 as shown in Fig. 5, and the third motor M3 is rotated on the fixed plate 89 2 linear motor M2 and the fixed plate 89 is horizontally moved 88x by the rotation of the lead screw rod 881 by the first motor M1. The movement form of the grippers Gr1, Gr2, Gr3 can be modified by other known mechanical constructions. In the drawing, Gx is a guide member for guiding each of the grippers Gr1, Gr2, and Gr3 along the paths Rx1, Rx2, and Ry.

Thus, the grippers Gr1, Gr2, and Gr3 can move together in the horizontal direction 88x and the vertical direction 88y. Therefore, the grippers Gr1, Gr2, and Gr3 can freely move through the openings Ci of the respective cleaning modules C11- The wafer W can be moved to any cleaning module C.

The inspection means 90 senses the amount and state of the foreign matter on the surface of the wafer W before transferring to each of the cleaning modules C11 to C32 and transmits the detection result to a control unit (not shown). For example, the inspection means 90 can take a picture of the surface of the wafer W and sense the amount of foreign matter on the surface of the wafer W.

Specifically, the first inspection means 90 senses the amount and state of foreign substances on the wafer after the chemical mechanical polishing process is completed. If the amount of the foreign substance is larger than the reference value, the wafer W is moved by the moving means Go. Is transferred to the first cleaning chamber C11 for spraying the cleaning liquid at a higher pressure or for a longer period of time. When the amount of the foreign matter is smaller than the reference value, the wafer W is moved by the moving means Go And is conveyed to the first to 1-2th cleaning chamber C12 for spraying the cleaning liquid at a low pressure or for a shorter time.

The wafer W having undergone the first cleaning in the first cleaning chamber C11 or the first cleaning chamber C12 is again heated by the second inspection means 902 until the amount of foreign matter reaches the surface of the wafer Is inspected. Depending on the amount of foreign matter of the wafer by the second inspection means 902, the other one of the first cleaning chamber C11 and the first cleaning chamber C12 or the other cleaning chamber C21 and C22 The wafer W is transferred for secondary cleaning.

As described above, by inspecting the contamination state of the wafer W before it is supplied to the cleaning modules C11-C32, it is possible to solve the cleaning defective problem in which the foreign substances adhered to the wafer W are not completely removed in the chemical mechanical polishing process .

That is, the multi-stage cleaning apparatus 100 of the wafer according to the present invention can perform the cleaning process in multiple stages through various routes among the six cleaning modules C11-C32 illustrated in the figure. 7, the multistage cleaning process A1 may be performed by sequentially passing the cleaning chambers C11, C21, and C31 disposed in the lower layer, and the cleaning chambers C12, C22, and C32 located in the upper layer may be sequentially Stage cleaning process A2 may be performed while the cleaning chambers C11, C22, and C32 are disposed in the upper and lower layers, and the multi-stage cleaning process A3 may be performed while the single bottom surface is shared The multistage cleaning process (A4, A5) may be performed while passing through all the two cleaning modules C12, C11, C22, C32 (CC11, C21, C22, C32). As the wafer W is cleaned while adjusting the paths of the plurality of cleaning modules in accordance with the contamination state of the wafer W, the cleaning efficiency of the wafer W is increased. In a state where the multi-stage cleaning process is completed, .

The selection of the various cleaning paths as shown in Fig. 7 may be performed at that time based on the remaining amount of the wafers by the inspection means 901, 902, 903, 90, A multistage cleaning process can be performed while a predetermined path is taken in consideration of the material of the metal layer of the wafer to be polished and the polishing time.

On the other hand, when the time required for any of the cleaning steps in the multistage cleaning process performed on the wafer W is longer than that in the other cleaning processes, the cleaning chamber in which the cleaning process is performed is compared with the cleaning chamber in which the other cleaning process is performed It is possible to alleviate the variation in the time required for cleaning performed in each of the cleaning chambers.

The buffer module 10 or 10 'includes a first buffer module 10 for holding a wafer W having undergone a first cleaning process in the first cleaning module C1 before being supplied to the second cleaning module C2, And a second buffer module 10 'for holding the wafer W after the second cleaning process in the second cleaning module C2 before the wafer W is supplied to the third cleaning module C3.

6, the buffer modules 10 and 10 'include a mounting pin 11 for supporting a wafer W in a minimum number of positions in which the attitude of the wafer W can be stably maintained, A supporting column 13 for vertically fixing the supporting plate 12 and a supporting column 13 for supporting the supporting plate 12 vertically so that the mounting pins 11 can be vertically stacked on the supporting columns 12, A driving unit 14a for vertically adjusting the position of the fixing pin 11 by moving the base 14 up and down and a driving unit 14b for moving the wafer W And a pure water supply unit 15 for supplying pure water to the surface of the water supply pipe 15a through a pure water supply pump 15a.

Since the buffer modules 10 and 10 'are vertically movable by the driving unit 15, the moving means Go moves the wafers W to the buffer modules 10 and 10' It can be mounted on the mounting pins 11 located in different layers.

Pure water is applied to the surface of the wafer W placed on the buffer modules 10 and 10 'from the pure water supply unit 15 to thereby maintain the wet state of the wafer W continuously. Thereby, it is possible to prevent the wafer W from being dried and damaged. The pure water supply unit 15 is installed in each layer of the buffer modules 10 and 10 'so as to continuously supply pure water to the surface of the wafer W placed on each layer. Pure water is applied to the upper and lower surfaces of the wafer W so that the polished surface of the wafer W can be maintained in a wet state. The pure water supply unit 15 includes all of the configurations in which pure water is sprayed in a jet form or sprayed in a large area and may be configured to dew in pure water although not shown in the drawing.

Each of the buffer modules 10 and 10 'is provided so as to be able to pass between adjacent cleaning modules C1, C2 and C3. Specifically, the first buffer module 10 deposits the wafer W having undergone the first cleaning process in the first cleaning module C1 and supplies the wafer W to the second cleaning module C2. Therefore, the first buffer module 10 10 are installed such that they can reciprocate (10d) in a path between the first cleaning module (C1) and the second cleaning module (C2). Since the second buffer module 10'attached the wafer W after the second cleaning process in the second cleaning module C2 and supplies the wafer W to the third cleaning module C3, 'Are installed so as to reciprocate in a path that can pass between the second cleaning module C2 and the third cleaning module C3.

In this case, when a plurality of the first cleaning module C1 and the second cleaning module C2 are formed, the first buffer module 10 includes a plurality of first cleaning modules C1, 2 cleaning module C2. Thereby, in order for the moving means Go to approach the buffer module 10 or 10 'to place the wafer thereon or to move the wafer placed on the buffer module 10 or 10' to the cleaning module to be performed next The approaching path can be minimized. Thus, the time for performing the multi-step cleaning process of the wafer can be further shortened.

On the other hand, reciprocating movement of the buffer module 10, 10 'along the guide rail R can be realized in various known types such as a lead screw. However, when the first buffer module 10 and the second buffer module 10 'move on one guide rail R, the first buffer module 10 and the second buffer module 10' It is preferable to reciprocate by a linear motor installed in the base 14 or a structure (not shown) below the base 14.

In the multi-stage cleaning apparatus 100 according to an embodiment of the present invention configured as described above, the cleaning module C is formed in a stacked structure and the moving unit Go moves the wafer in the horizontal and vertical directions The cleaning process is performed on at least one of the 1-1 cleaning module and the 1-2 cleaning module stacked in a single layer, and then the second cleaning process is performed in accordance with the cleaning condition of the wafer, The next cleaning step is performed in at least one of the cleaning module 1 and the cleaning module 2-2 so that two to four cleaning processes are performed in the space in which the two predetermined cleaning processes are conventionally performed depending on the contamination state of the wafer So that the space occupied by the CMP cleaning apparatus can be maintained to maintain a compact structure and the slurry or abrasive grains on the wafer during the chemical mechanical polishing process It is possible to obtain a more reliable and clean removal effect.

Even if there is a variation in the time required for the cleaning process performed by each of the cleaning modules (C1, C2, C3) in which the multistage cleaning process is performed, the wafer after the cleaning process in each cleaning module is supplied to the next cleaning module The buffer module 10, 10 'is configured to stand and wait while maintaining the wet state in the buffer module 10, 10', thereby making it possible to continuously perform the multi-step washing process, thereby advantageously shortening the cleaning time and improving the cleaning process efficiency Effect can be obtained. Further, since the cleaning process is performed in a larger number of cleaning modules than in the related art, the cleaning process of the wafer can be cleaned only by a non-contact type brushless method (for example, a nozzle jetting method) It is possible to solve the problem that the surface of the wafer is damaged by scratches due to the abrasive grains or the like.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, Modified, modified, or improved. In the accompanying drawings, the cleaning module is arranged in two layers on one bottom surface area. However, the present invention includes a configuration in which the cleaning modules are stacked in three or more layers on one bottom surface area.

W: wafer P: abrasive plate
C11: 1-1 cleaning module C12: 1-2 cleaning module
C21: 2-1 cleaning module C22: 2-2 cleaning module
C31: 3-1 cleaning module C32: 3-2 cleaning module
Go: Moving means Gr1, Gr2, Gr3: Gripper
10: first buffer module 10 ': second buffer module
11: mounting pin 12: supporting plate
13: support column 15: pure water supply

Claims (14)

An apparatus for cleaning a wafer subjected to a chemical mechanical polishing process in a multistage manner,
A 1-1 cleaning module for cleaning the wafer subjected to the chemical mechanical polishing process;
A 1-2 cleaning module disposed on the upper side of the 1-1 cleaning module to clean the wafer subjected to the chemical mechanical polishing process;
A second-1 cleaning module for cleaning the wafer cleaned in either the 1-1 cleaning module or the 1-2 cleaning module;
A second-2 cleaning module disposed on the upper side of the second-1 cleaning module to clean the wafer cleaned in any one of the 1-1 cleaning module and the 1-2 cleaning module;
A moving means for moving the wafer by at least one of the 1-1 cleaning module and the 1-2 cleaning module, and the 2-1 cleaning module and the 2-2 cleaning module;
And a cleaning unit for cleaning the wafer.
The method according to claim 1,
The moving means moves the wafer to any one of the 1-1 cleaning module and the 1-2 cleaning module so that the wafer is subjected to a cleaning process, And the wafer is moved by a path that is secondarily subjected to a cleaning process by moving the wafer to any one of the second to second cleaning modules.
The method according to claim 1,
The moving means moves the wafer to any one of the 1-1 cleaning module and the 1-2 cleaning module to carry out a cleaning process, And moving the wafer to another one of the modules to move the wafer by a path through a cleaning process.
The method according to claim 1,
The wafer cleaned in any one of the 1-1 cleaning module and the 1-2 cleaning module is supplied to the other of the 2-1 cleaning module and the 2-2 cleaning module, A first buffer module for storing the first buffer module;
And a cleaning unit for cleaning the wafer.
5. The method of claim 4,
Wherein the first buffer module is provided with a space for mounting two or more wafers.
6. The method of claim 5,
Wherein the first buffer module is provided with a space in which two or more wafers are stacked up and down.
5. The method of claim 4,
The first buffer module receives the wafer from any one of the 1-1 cleaning module and the 1-2 cleaning module and receives the wafer from any one of the 2-1 cleaning module and the 2-2 cleaning module Wherein the cleaning unit is provided so as to be capable of reciprocating so as to supply the wafer.
5. The method of claim 4,
Wherein the first buffer module supplies the liquid to maintain the wet state of the wafer being stacked.
9. The method according to any one of claims 1 to 8,
It is preferable that the cleaning process of the 1-1 cleaning module, the 1-2 cleaning module, the 2-1 cleaning module, and the 2-2 cleaning module is performed for two or more Wherein the cleaning unit is arranged in the cleaning unit.
9. The method according to any one of claims 1 to 8,
A 3-1 cleaning module for cleaning the wafer cleaned by either the 2-1 cleaning module or the 2-2 cleaning module;
A third-second cleaning module disposed on the upper side of the third-first cleaning module for cleaning the wafer cleaned in either the second-first cleaning module or the second-cleaning module;
Wherein the moving means is configured such that, when the wafer is cleaned secondarily in any one of the 2-1 cleaning module and the 2-2 cleaning module, the third-1 cleaning module and the third- Wherein the wafer is moved to a path through which the wafer is cleaned thirdarily in any one of the plurality of cleaning units.
9. The method according to any one of claims 1 to 8,
Wherein the wafer passes through any one of the 1-1 cleaning module and the 1-2 cleaning module and the 2-1 cleaning module and the 2-2 cleaning module, Wherein the wafer is cleaned only in a non-contact manner.
12. The method of claim 11,
At least one of the 2-1 cleaning module, the 2-2 module, the 3-1 cleaning module, and the 3-2 cleaning module includes at least one of a rinsing process and a drying process To the wafer stage.
9. The method according to any one of claims 1 to 8,
Wherein the cleaning state of the wafer is checked between the 1-1 cleaning module and the 2-1 cleaning module and the moving means determines the cleaning path of the wafer according to the inspected cleaning state of the wafer A multi-stage cleaning apparatus for wafers.
A 1-1 cleaning module, a 1-2 cleaning module stacked on top of the 1-1 cleaning module, a 2-1 cleaning module spaced horizontally from the 1-1 cleaning module, A method for multi-stage cleaning of wafers subjected to a chemical mechanical polishing process in a second-second cleaning module stacked on the upper side of a second-first cleaning module,
A first cleaning step of cleaning the wafer from any one of the 1-1 cleaning module and the 1-2 cleaning module;
An inspection step of inspecting a cleaning state of the wafer subjected to the first-order cleaning step;
The cleaning method according to any one of claims 1 to 3, further comprising the steps of: a first cleaning module A second cleaning step of cleaning the wafer from any one of the modules;
And a cleaning step of cleaning the wafer.

Images