JP2015043081A - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
JP2015043081A
JP2015043081A JP2014152038A JP2014152038A JP2015043081A JP 2015043081 A JP2015043081 A JP 2015043081A JP 2014152038 A JP2014152038 A JP 2014152038A JP 2014152038 A JP2014152038 A JP 2014152038A JP 2015043081 A JP2015043081 A JP 2015043081A
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JP
Japan
Prior art keywords
layer
substrate
display device
insulating layer
light
Prior art date
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JP2014152038A
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English (en)
Japanese (ja)
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JP2015043081A5 (enExample
Inventor
池田　寿雄
Toshio Ikeda
寿雄 池田
秀貴 魚地
Hideki Uoji
秀貴 魚地
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2014152038A priority Critical patent/JP2015043081A/ja
Publication of JP2015043081A publication Critical patent/JP2015043081A/ja
Publication of JP2015043081A5 publication Critical patent/JP2015043081A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04102—Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Geometry (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2014152038A 2013-07-26 2014-07-25 表示装置 Withdrawn JP2015043081A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014152038A JP2015043081A (ja) 2013-07-26 2014-07-25 表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013155990 2013-07-26
JP2013155990 2013-07-26
JP2014152038A JP2015043081A (ja) 2013-07-26 2014-07-25 表示装置

Related Child Applications (1)

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JP2019116974A Division JP6823691B2 (ja) 2013-07-26 2019-06-25 表示装置

Publications (2)

Publication Number Publication Date
JP2015043081A true JP2015043081A (ja) 2015-03-05
JP2015043081A5 JP2015043081A5 (enExample) 2017-08-31

Family

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Family Applications (8)

Application Number Title Priority Date Filing Date
JP2014152038A Withdrawn JP2015043081A (ja) 2013-07-26 2014-07-25 表示装置
JP2019116974A Active JP6823691B2 (ja) 2013-07-26 2019-06-25 表示装置
JP2021002278A Active JP6977188B2 (ja) 2013-07-26 2021-01-08 電子機器
JP2021086038A Active JP7018157B2 (ja) 2013-07-26 2021-05-21 発光装置の作製方法
JP2021086950A Active JP6977194B2 (ja) 2013-07-26 2021-05-24 電子機器
JP2022011489A Withdrawn JP2022062127A (ja) 2013-07-26 2022-01-28 発光装置
JP2023086408A Withdrawn JP2023105017A (ja) 2013-07-26 2023-05-25 表示装置
JP2024209535A Pending JP2025023176A (ja) 2013-07-26 2024-12-02 表示装置

Family Applications After (7)

Application Number Title Priority Date Filing Date
JP2019116974A Active JP6823691B2 (ja) 2013-07-26 2019-06-25 表示装置
JP2021002278A Active JP6977188B2 (ja) 2013-07-26 2021-01-08 電子機器
JP2021086038A Active JP7018157B2 (ja) 2013-07-26 2021-05-21 発光装置の作製方法
JP2021086950A Active JP6977194B2 (ja) 2013-07-26 2021-05-24 電子機器
JP2022011489A Withdrawn JP2022062127A (ja) 2013-07-26 2022-01-28 発光装置
JP2023086408A Withdrawn JP2023105017A (ja) 2013-07-26 2023-05-25 表示装置
JP2024209535A Pending JP2025023176A (ja) 2013-07-26 2024-12-02 表示装置

Country Status (2)

Country Link
US (2) US9356049B2 (enExample)
JP (8) JP2015043081A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017027067A (ja) * 2015-04-13 2017-02-02 株式会社半導体エネルギー研究所 半導体装置及び電子機器
CN110199341A (zh) * 2017-01-24 2019-09-03 夏普株式会社 柔性显示器
JP2023015112A (ja) * 2015-03-17 2023-01-31 株式会社半導体エネルギー研究所 発光装置

Families Citing this family (28)

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US8610155B2 (en) 2008-11-18 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, method for manufacturing the same, and cellular phone
JP6490901B2 (ja) * 2013-03-14 2019-03-27 株式会社半導体エネルギー研究所 発光装置の作製方法
US9377817B2 (en) 2013-08-20 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Display device
US9229481B2 (en) 2013-12-20 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN112965640B (zh) 2014-02-28 2024-06-25 株式会社半导体能源研究所 电子设备
WO2015166376A1 (en) 2014-05-02 2015-11-05 Semiconductor Energy Laboratory Co., Ltd. Display device and input/output device
JP6518936B2 (ja) * 2014-11-14 2019-05-29 パナソニックＩｐマネジメント株式会社 部品実装装置
KR102298367B1 (ko) * 2015-01-05 2021-09-06 삼성디스플레이 주식회사 표시 장치
KR102376442B1 (ko) * 2015-01-22 2022-03-18 삼성디스플레이 주식회사 회로부를 포함하는 플렉서블 표시 장치
US10204535B2 (en) * 2015-04-06 2019-02-12 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US10481638B2 (en) * 2015-11-18 2019-11-19 Semiconductor Energy Laboratory Co., Ltd. Electronic device
KR102375685B1 (ko) * 2016-02-02 2022-03-18 삼성디스플레이 주식회사 플렉서블 디스플레이 장치
KR102610025B1 (ko) * 2016-06-02 2023-12-06 삼성디스플레이 주식회사 디스플레이 장치
JP6749807B2 (ja) * 2016-07-26 2020-09-02 新光電気工業株式会社 光半導体装置
KR101744170B1 (ko) * 2016-09-07 2017-06-07 (주)대우건설 구근 확장이 가능한 강관 말뚝 관입 장치
CN107134459B (zh) * 2017-04-07 2020-08-07 京东方科技集团股份有限公司 显示背板及其制作方法和显示装置
KR102400712B1 (ko) * 2017-10-12 2022-05-23 삼성전자주식회사 벤딩 영역을 포함하는 디스플레이 및 이를 포함하는 전자 장치
CN107958920B (zh) * 2017-11-23 2020-10-09 合肥鑫晟光电科技有限公司 柔性显示面板、柔性显示装置及其制备方法
KR102453147B1 (ko) * 2017-12-11 2022-10-07 엘지디스플레이 주식회사 플렉서블 표시장치
CN111370446B (zh) * 2018-12-26 2022-01-04 武汉华星光电半导体显示技术有限公司 Oled显示面板及oled显示装置
TWI710820B (zh) * 2019-03-28 2020-11-21 友達光電股份有限公司 顯示裝置
CN110071231B (zh) * 2019-06-13 2022-08-12 京东方科技集团股份有限公司 稳固pi基板防止翘曲的方法及显示面板的制作方法
CN110349974A (zh) * 2019-06-25 2019-10-18 武汉华星光电半导体显示技术有限公司 一种阵列基板及其制备方法、显示装置
US11805680B2 (en) * 2019-08-23 2023-10-31 Boe Technology Group Co., Ltd. Light-emitting diode display panel, manufacturing method thereof, and display device
JP7617356B2 (ja) * 2019-10-01 2025-01-20 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
JPWO2021064509A1 (enExample) 2019-10-04 2021-04-08
CN115360215A (zh) * 2021-05-17 2022-11-18 乐金显示有限公司 显示装置
CN113488516B (zh) * 2021-06-28 2022-05-03 武汉华星光电半导体显示技术有限公司 显示面板及显示装置

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