JP2015030635A - エピタキシャル膜形成用配向基板及びその製造方法 - Google Patents
エピタキシャル膜形成用配向基板及びその製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 127
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 131
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 65
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 44
- 239000010949 copper Substances 0.000 claims abstract description 38
- 229910052802 copper Inorganic materials 0.000 claims abstract description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims description 50
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 44
- 239000001257 hydrogen Substances 0.000 claims description 34
- 229910052739 hydrogen Inorganic materials 0.000 claims description 34
- 238000007747 plating Methods 0.000 claims description 34
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 33
- 229910052759 nickel Inorganic materials 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 8
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 7
- 239000012779 reinforcing material Substances 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 230000002787 reinforcement Effects 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 97
- 239000010408 film Substances 0.000 description 83
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 239000010409 thin film Substances 0.000 description 14
- 230000009471 action Effects 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 229910000510 noble metal Inorganic materials 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000005304 joining Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000007733 ion plating Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000007737 ion beam deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910000792 Monel Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910001295 No alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910001293 incoloy Inorganic materials 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- -1 organic acid salt Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001028 reflection method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
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- C25D3/00—Electroplating: Baths therefor
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- C25D5/10—Electroplating with more than one layer of the same or of different metals
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- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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Abstract
【解決手段】本発明は、少なくとも片面に配向化金属層を有するエピタキシャル膜形成用配向基板において、前記配向化金属層は、立方体集合組織を有する銅層からなり、前記配向化金属層の表面上に単位面積当り10〜300ng/mm2のパラジウムが付加されており、前記配向化金属層の表面における水素含有量が700〜2000ppmであることを特徴とするエピタキシャル膜形成用配向基板である。
【選択図】図1
Description
・真空度:10−5Pa
(真空槽、エッチングチャンバ内はアルゴンガス雰囲気下)
・印加電圧:2kV
・エッチング時間:5分間
・接合時加圧力:2MPa
Claims (12)
- 少なくとも片面に配向化金属層を有するエピタキシャル膜形成用配向基板において、
前記配向化金属層は、立方体集合組織を有する銅層からなり、
前記配向化金属層の表面上に単位面積当り10〜300ng/mm2のパラジウムが付加されており、
前記配向化金属層の表面における水素含有量が700〜2000ppmであることを特徴とするエピタキシャル膜形成用配向基板。 - 配向化金属層は、銅層の表面上にニッケル層を備えてなる請求項1記載のエピタキシャル膜形成用配向基板。
- ニッケル層の厚さは、100〜20000nmである請求項2記載のエピタキシャル膜形成用配向基板。
- 配向化金属層の銅層は、{100}<001>立方体集合組織を有し、その表面における結晶軸のずれ角ΔφがΔφ≦6°である請求項1〜請求項3のいずれかに記載のエピタキシャル膜形成用配向基板。
- 配向化金属層はその補強のための補強材を備える請求項1〜請求項4のいずれかに記載のエピタキシャル膜形成用配向基板。
- 請求項1〜請求項5のいずれかに記載のエピタキシャル膜形成用配向基板の配向化金属層上に、少なくとも1層の中間層と、酸化物超電導材料からなる超電導材層が形成されてなる超電導材料。
- 中間層は、少なくともバリア層及びキャップ層を有し、前記バリア層は、ジルコニウム酸化物を含む酸化物からなり、前期キャップ層は、希土類元素酸化物又は希土類元素を含む複合酸化物からなる請求項6記載の超電導材料。
- 超電導材層は、RE系超電導材料である請求項6又は請求項7記載の超電導材料。
- 請求項1〜請求項4のいずれかに記載のエピタキシャル膜形成用配向基板の製造方法であって、
立方体集合組織を有する銅層の表面に、ストライクめっき法により単位面積当り10〜300ng/mm2のパラジウムを付加する工程を含むエピタキシャル膜形成用配向基板の製造方法。 - ストライクめっきの条件は、金属パラジウム濃度を0.4〜0.6g/L、pH=8.5〜9.5としためっき液でめっきするものである請求項9記載のエピタキシャル膜形成用配向基板の製造方法。
- パラジウムを付加する工程の前、立方体集合組織を有する銅層の表面にエピタキシャル成長によりニッケル層を形成する工程を含む請求項9又は請求項10記載のエピタキシャル膜形成用配向基板の製造方法。
- パラジウムを付加する工程の後、非酸化性雰囲気中で400℃以上に加熱して熱処理を行う工程を含む請求項9〜請求項11のいずれかに記載のエピタキシャル膜形成用配向基板の製造方法。
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EP14832663.0A EP3029181A4 (en) | 2013-08-01 | 2014-07-22 | Oriented substrate for use in formation of epitaxial film, and method for producing same |
PCT/JP2014/069318 WO2015016098A1 (ja) | 2013-08-01 | 2014-07-22 | エピタキシャル膜形成用配向基板及びその製造方法 |
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