JP2015008273A5 - - Google Patents
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- JP2015008273A5 JP2015008273A5 JP2014058221A JP2014058221A JP2015008273A5 JP 2015008273 A5 JP2015008273 A5 JP 2015008273A5 JP 2014058221 A JP2014058221 A JP 2014058221A JP 2014058221 A JP2014058221 A JP 2014058221A JP 2015008273 A5 JP2015008273 A5 JP 2015008273A5
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- 238000004140 cleaning Methods 0.000 claims 100
- 239000000758 substrate Substances 0.000 claims 89
- 239000007788 liquid Substances 0.000 claims 77
- 238000007599 discharging Methods 0.000 claims 23
- 230000002093 peripheral Effects 0.000 claims 21
- 238000004590 computer program Methods 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Claims (16)
基板を水平に保持する基板保持部と、
前記基板保持部を鉛直軸周りに回転させる回転機構と、
前記基板保持部に保持された基板に各々洗浄液を供給するための第1の洗浄液ノズル及び第2の洗浄液ノズルと、
前記基板保持部に保持された基板にガスを吐出するガスノズルと、
前記第1の洗浄液ノズル、第2の洗浄液ノズル及びガスノズルを移動させるためのノズル移動部と、
前記第1の洗浄液ノズルから洗浄液を基板の中心部に吐出するステップと、次いで前記洗浄液の吐出位置を前記基板の中心部から周縁側に移動させた後、前記ガスノズルからガスを当該中心部に吐出するステップと、続いて第1の洗浄液ノズル及びガスノズルから夫々洗浄液及びガスの吐出を行いながら前記第1の洗浄液ノズル及び前記ガスノズルの各吐出位置を基板の周縁側に向けて移動させるステップと、次に前記第1の洗浄液ノズルから第2の洗浄液ノズルに洗浄液の吐出を切替え、第2の洗浄液ノズルからの洗浄液の吐出及びガスノズルからのガスの吐出を行いながら当該第2の洗浄液ノズル及び当該ガスノズルの各吐出位置を基板の周縁側に向けて移動させるステップと、を実行するように制御信号を出力する制御部と、を備え、
前記第2の洗浄液ノズルは、吐出位置が第1の洗浄液ノズルの吐出位置の移動軌跡から外れる位置に設定され、
第2の洗浄液ノズル及びガスノズルの各吐出位置から基板の中心部までの距離を、夫々d2及びd3とすると、第2の洗浄液ノズルから洗浄液を吐出しているときには、d3<d2であり、かつ第2の洗浄液ノズルが基板の周縁側に移動するにつれて、d2とd3との差が徐々に小さくなるように構成されていることを特徴とする基板洗浄装置。 In an apparatus for cleaning a substrate using a cleaning liquid and a gas while rotating the substrate,
A substrate holder for horizontally holding the substrate;
A rotation mechanism for rotating the substrate holder around a vertical axis;
A first cleaning liquid nozzle and a second cleaning liquid nozzle for supplying a cleaning liquid to each of the substrates held by the substrate holder;
A gas nozzle for discharging gas to the substrate held by the substrate holding unit;
A nozzle moving unit for moving the first cleaning liquid nozzle, the second cleaning liquid nozzle, and the gas nozzle;
The step of discharging the cleaning liquid from the first cleaning liquid nozzle to the central portion of the substrate, and then moving the discharge position of the cleaning liquid from the central portion of the substrate to the peripheral side, and then discharging the gas from the gas nozzle to the central portion A step of moving each discharge position of the first cleaning liquid nozzle and the gas nozzle toward the peripheral side of the substrate while discharging the cleaning liquid and the gas from the first cleaning liquid nozzle and the gas nozzle, respectively, and The discharge of the cleaning liquid is switched from the first cleaning liquid nozzle to the second cleaning liquid nozzle, and the second cleaning liquid nozzle and the gas nozzle of the gas nozzle are discharged while discharging the cleaning liquid from the second cleaning liquid nozzle and the gas from the gas nozzle. A step of moving each discharge position toward the peripheral side of the substrate, and a control unit that outputs a control signal so as to perform,
The second cleaning liquid nozzle is set at a position where the discharge position deviates from the movement locus of the discharge position of the first cleaning liquid nozzle,
Assuming that the distances from the respective discharge positions of the second cleaning liquid nozzle and the gas nozzle to the center of the substrate are d2 and d3, respectively, when the cleaning liquid is discharged from the second cleaning liquid nozzle, d3 <d2 and A substrate cleaning apparatus, wherein the difference between d2 and d3 gradually decreases as the second cleaning liquid nozzle moves toward the peripheral edge of the substrate.
基板を水平に保持する基板保持部と、
前記基板保持部を鉛直軸周りに回転させる回転機構と、
前記基板保持部に保持された基板に洗浄液を供給するための洗浄液ノズル及びガスを吐出するガスノズルが保持された第1のノズル移動部と、
前記基板保持部に保持された基板にガスを吐出するガスノズルが保持され、前記第1のノズル移動部とは別個の第2のノズル移動部と、
前記洗浄液ノズルから洗浄液を基板の中心部に吐出するステップと、次いで第1のノズル移動部を移動させ、前記第1のノズル移動部のガスノズルからガスを当該中心部に吐出するステップと、続いて洗浄液ノズルの吐出位置が第1のノズル移動部のガスノズルの吐出位置よりも基板の周縁側に位置した状態で洗浄液の吐出及び当該ガスノズルからのガスの吐出を行いながら第1の移動部を基板の周縁側に向けて移動させるステップと、次に、第2のノズル移動部のガスノズルからのガスと前記洗浄液ノズルからの洗浄液の吐出とを行いながら、第1のノズル移動部及び第2のノズル移動部を基板の周縁側に移動させるステップと、を実行するように制御信号を出力する制御部と、を備え、
前記第2のノズル移動部のガスノズルからガスを吐出しているときには、洗浄液ノズル及び第2のノズル移動部のガスノズルの各吐出位置から基板の中心部までの距離を夫々L1、L2とすると、L2<L1であり、かつ第1のノズル移動部及び第2のノズル移動部が基板の周縁側に移動するにつれて、L1とL2との差が徐々に小さくなるように両ノズルの移動速度が制御されることを特徴とする基板洗浄装置。 In an apparatus for cleaning a substrate using a cleaning liquid and a gas while rotating the substrate,
A substrate holder for horizontally holding the substrate;
A rotation mechanism for rotating the substrate holder around a vertical axis;
A first nozzle moving unit in which a cleaning liquid nozzle for supplying a cleaning liquid to the substrate held in the substrate holding unit and a gas nozzle for discharging gas are held;
A gas nozzle that discharges gas to the substrate held by the substrate holding unit is held, and a second nozzle moving unit that is separate from the first nozzle moving unit;
Discharging the cleaning liquid from the cleaning liquid nozzle to the center of the substrate; then, moving the first nozzle moving unit and discharging the gas from the gas nozzle of the first nozzle moving unit to the center; While discharging the cleaning liquid and discharging the gas from the gas nozzle while the discharge position of the cleaning liquid nozzle is positioned on the peripheral side of the substrate with respect to the discharge position of the gas nozzle of the first nozzle moving section, the first moving section is moved to the substrate. The first nozzle moving unit and the second nozzle moving while performing the step of moving toward the peripheral side and then discharging the gas from the gas nozzle of the second nozzle moving unit and the cleaning liquid from the cleaning liquid nozzle A step of moving the unit to the peripheral side of the substrate, and a control unit that outputs a control signal so as to perform,
When the gas is discharged from the gas nozzle of the second nozzle moving unit, the distances from the discharge positions of the cleaning liquid nozzle and the gas nozzle of the second nozzle moving unit to the center of the substrate are L1 and L2, respectively. <L1, and the moving speed of both nozzles is controlled so that the difference between L1 and L2 gradually decreases as the first nozzle moving unit and the second nozzle moving unit move toward the peripheral edge of the substrate. A substrate cleaning apparatus.
前記第2のガスノズルは、第1のガスノズルの吐出位置が基板の中心部から基板の周縁側に移動した後であって、第2のノズル移動部の前記ガスノズルからガスが吐出する前に、基板の周縁側に移動しながらガスを吐出するために用いられ、
前記第2のガスノズルの吐出位置から基板の中心部までの距離は、前記洗浄液ノズルの吐出位置から基板の中心部までの距離よりも短いことを特徴とする請求項4記載の基板洗浄装置。 Supposing that the gas nozzle provided in the first nozzle moving unit is called a first gas nozzle, the second gas nozzle is located at a position deviating from the moving locus of the first gas nozzle in the first nozzle moving unit. Provided,
The second gas nozzle is formed after the discharge position of the first gas nozzle has moved from the central portion of the substrate to the peripheral side of the substrate and before the gas is discharged from the gas nozzle of the second nozzle moving portion. Used to discharge gas while moving to the peripheral side of
5. The substrate cleaning apparatus according to claim 4 , wherein a distance from the discharge position of the second gas nozzle to the center of the substrate is shorter than a distance from the discharge position of the cleaning liquid nozzle to the center of the substrate.
基板を基板保持部に水平に保持する工程と、
前記基板保持部を鉛直軸周りに回転させながら、第1の洗浄液ノズルから洗浄液を基板の中心部に吐出する工程と、
次いで前記洗浄液の吐出位置を基板の周縁側に移動させた後、ガスノズルからガスを前記基板の中心部に吐出する工程と、
続いて第1の洗浄液ノズル及びガスノズルから夫々洗浄液及びガスの吐出を行いながら前記第1の洗浄液ノズル及び前記ガスノズルの各吐出位置を基板の周縁側に向けて移動させる工程と、
次に前記第1の洗浄液ノズルから第2の洗浄液ノズルに洗浄液の吐出を切替え、第2の洗浄液ノズルからの洗浄液の吐出及びガスノズルからのガスの吐出を行いながら当該第2の洗浄液ノズル及び当該ガスノズルの各吐出位置を基板の周縁側に向けて移動させる工程と、を含み
前記第2の洗浄液ノズルは、吐出位置が第1の洗浄液ノズルの吐出位置の移動軌跡から外れる位置に設定され、
前記第2の洗浄液ノズル及びガスノズルの各吐出位置から基板の中心部までの距離を、夫々d2及びd3とすると、第2の洗浄液ノズルから洗浄液を吐出しているときには、d3<d2であり、かつ第2の洗浄液ノズルが基板の周縁側に移動するにつれて、d2とd3との差が徐々に小さくなることを特徴とする基板洗浄方法。 In a method of cleaning a substrate using a cleaning liquid and a gas while rotating the substrate,
Holding the substrate horizontally on the substrate holder;
Discharging the cleaning liquid from the first cleaning liquid nozzle to the center of the substrate while rotating the substrate holding portion around the vertical axis;
Next, after the discharge position of the cleaning liquid is moved to the peripheral side of the substrate, a step of discharging gas from the gas nozzle to the center of the substrate;
Subsequently, moving each discharge position of the first cleaning liquid nozzle and the gas nozzle toward the peripheral side of the substrate while discharging the cleaning liquid and gas from the first cleaning liquid nozzle and the gas nozzle, respectively.
Next, the discharge of the cleaning liquid is switched from the first cleaning liquid nozzle to the second cleaning liquid nozzle, and the second cleaning liquid nozzle and the gas nozzle are performed while discharging the cleaning liquid from the second cleaning liquid nozzle and the gas from the gas nozzle. The second cleaning liquid nozzle is set to a position where the discharge position deviates from the movement locus of the discharge position of the first cleaning liquid nozzle, and the step of moving each of the discharge positions toward the peripheral side of the substrate.
Assuming that the distances from the discharge positions of the second cleaning liquid nozzle and the gas nozzle to the center of the substrate are d2 and d3, respectively, d3 <d2 when the cleaning liquid is discharged from the second cleaning liquid nozzle, and A substrate cleaning method, wherein the difference between d2 and d3 is gradually reduced as the second cleaning liquid nozzle moves toward the peripheral edge of the substrate.
基板に洗浄液を供給するための洗浄液ノズル及びガスを吐出するガスノズルが保持された第1のノズル移動部と、基板にガスを吐出するガスノズルが保持され、前記第1のノズル移動部とは別個の第2のノズル移動部と、を用い、
基板を基板保持部に水平に保持する工程と、
前記基板保持部を鉛直軸周りに回転させながら、前記洗浄液ノズルから洗浄液を基板の中心部に吐出する工程と、
次いで第1のノズル移動部を移動させ、前記第1のノズル移動部のガスノズルからガスを当該中心部に吐出する工程と、
続いて洗浄液ノズルの吐出位置が第1のノズル移動部のガスノズルの吐出位置よりも基板の周縁側に位置した状態で洗浄液の吐出及び当該ガスノズルからのガスの吐出を行いながら第1の移動部を基板の周縁側に向けて移動させる工程と、
次に、第2のノズル移動部のガスノズルからのガスと前記洗浄液ノズルからの洗浄液の吐出とを行いながら、第1のノズル移動部及び第2のノズル移動部を基板の周縁側に移動させる工程と、を含み、
前記第2のノズル移動部のガスノズルからガスを吐出しているときには、洗浄液ノズル及び第2のノズル移動部のガスノズルの各吐出位置から基板の中心部までの距離を夫々L1、L2とすると、L2<L1であり、かつ第1のノズル移動部及び第2のノズル移動部が基板の周縁側に移動するにつれて、L1とL2との差が徐々に小さくなるように両ノズル移動部の速度が制御されることを特徴とする基板洗浄方法。 In a method of cleaning a substrate using a cleaning liquid and a gas while rotating the substrate,
A first nozzle moving part that holds a cleaning liquid nozzle for supplying a cleaning liquid to the substrate and a gas nozzle that discharges gas, and a gas nozzle that discharges gas to the substrate are held separately from the first nozzle moving part Using a second nozzle moving unit,
Holding the substrate horizontally on the substrate holder;
Discharging the cleaning liquid from the cleaning liquid nozzle to the center of the substrate while rotating the substrate holding part around a vertical axis;
Next, a step of moving the first nozzle moving part and discharging gas from the gas nozzle of the first nozzle moving part to the central part;
Subsequently, the first moving unit is moved while discharging the cleaning liquid and discharging the gas from the gas nozzle in a state where the discharge position of the cleaning liquid nozzle is located closer to the peripheral edge of the substrate than the discharge position of the gas nozzle of the first nozzle moving unit. Moving toward the peripheral side of the substrate;
Next, the step of moving the first nozzle moving unit and the second nozzle moving unit to the peripheral side of the substrate while discharging the gas from the gas nozzle of the second nozzle moving unit and discharging the cleaning liquid from the cleaning liquid nozzle. And including
When the gas is discharged from the gas nozzle of the second nozzle moving unit, the distances from the discharge positions of the cleaning liquid nozzle and the gas nozzle of the second nozzle moving unit to the center of the substrate are L1 and L2, respectively. <L1, and the speed of both nozzle moving parts is controlled so that the difference between L1 and L2 gradually decreases as the first nozzle moving part and the second nozzle moving part move toward the peripheral edge of the substrate. And a substrate cleaning method.
前記第1のガスノズルの吐出位置が基板の中心部から基板の周縁側に移動した後であって、第2のノズル移動部のガスノズルからガスが吐出する前に、前記第1のノズル移動部を基板の周縁側に移動しながら第2のガスノズルからガスを吐出する工程を更に含み、
前記第2のガスノズルの吐出位置から基板の中心部までの距離は、前記洗浄液ノズルの吐出位置から基板の中心部までの距離よりも短いことを特徴とする請求項12記載の基板洗浄方法。 Supposing that the gas nozzle provided in the first nozzle moving unit is called a first gas nozzle, the second gas nozzle is located at a position deviating from the moving locus of the first gas nozzle in the first nozzle moving unit. Provided,
After the discharge position of the first gas nozzle is moved from the center of the substrate to the peripheral edge of the substrate, before the gas is discharged from the gas nozzle of the second nozzle moving unit, the first nozzle moving unit is moved. A step of discharging gas from the second gas nozzle while moving to the peripheral side of the substrate;
13. The substrate cleaning method according to claim 12 , wherein the distance from the discharge position of the second gas nozzle to the center of the substrate is shorter than the distance from the discharge position of the cleaning liquid nozzle to the center of the substrate.
前記コンピュータプログラムは、請求項7ないし15のいずれか一項に記載の基板洗浄方法を実行するようにステップ群が組まれていることを特徴とする記憶媒体。 A storage medium storing a computer program used in an apparatus for cleaning a substrate using a cleaning liquid and a gas while rotating the substrate,
A storage medium, wherein the computer program includes a set of steps so as to execute the substrate cleaning method according to any one of claims 7 to 15 .
Priority Applications (6)
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JP2014058221A JP6102807B2 (en) | 2013-05-28 | 2014-03-20 | Substrate cleaning apparatus, substrate cleaning method, and storage medium |
US14/283,331 US9704730B2 (en) | 2013-05-28 | 2014-05-21 | Substrate cleaning apparatus, substrate cleaning method and non-transitory storage medium |
KR1020140062387A KR102126591B1 (en) | 2013-05-28 | 2014-05-23 | Substrate cleaning apparatus, substrate cleaning method and non-transitory storage medium |
TW103118328A TWI568507B (en) | 2013-05-28 | 2014-05-26 | Substrate cleaning apparatus, substrate cleaning method and non-transitory storage medium |
CN201410232087.5A CN104217979B (en) | 2013-05-28 | 2014-05-28 | Base plate cleaning device and substrate-cleaning method |
US15/598,358 US9805958B2 (en) | 2013-05-28 | 2017-05-18 | Substrate cleaning apparatus, substrate cleaning method and non-transitory storage medium |
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JP2014058221A JP6102807B2 (en) | 2013-05-28 | 2014-03-20 | Substrate cleaning apparatus, substrate cleaning method, and storage medium |
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JP2015008273A5 true JP2015008273A5 (en) | 2016-03-31 |
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JP6613206B2 (en) * | 2015-06-18 | 2019-11-27 | 株式会社Screenホールディングス | Substrate processing equipment |
TWI622091B (en) | 2015-06-18 | 2018-04-21 | 思可林集團股份有限公司 | Substrate processing apparatus |
JP6960489B2 (en) * | 2016-03-31 | 2021-11-05 | 株式会社Screenホールディングス | Substrate processing method |
JP6807162B2 (en) * | 2016-04-13 | 2021-01-06 | 東京エレクトロン株式会社 | Substrate cleaning method, substrate cleaning equipment and computer-readable recording medium |
CN107470225A (en) * | 2017-08-28 | 2017-12-15 | 广州沃安实业有限公司 | A kind of cleaning machine |
JP7034634B2 (en) | 2017-08-31 | 2022-03-14 | 株式会社Screenホールディングス | Board processing method and board processing equipment |
TWI643683B (en) * | 2017-10-19 | 2018-12-11 | Scientech Corporation | Fluid providing device |
JP2019169624A (en) * | 2018-03-23 | 2019-10-03 | 株式会社Screenホールディングス | Development method |
CN115069639B (en) * | 2022-05-31 | 2023-11-14 | 江苏卓玉智能科技有限公司 | Cleaning device for semiconductor wafer |
WO2024014346A1 (en) * | 2022-07-14 | 2024-01-18 | 東京エレクトロン株式会社 | Substrate processing device, substrate processing method, and substrate processing program |
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AT501653B1 (en) * | 2003-11-18 | 2010-04-15 | Tokyo Electron Ltd | SUBSTRATE CLEANING PROCESS, SUBSTRATE CLEANING DEVICE AND COMPUTER-READABLE RECORDING MEDIUM |
WO2005104200A1 (en) * | 2004-04-23 | 2005-11-03 | Tokyo Electron Limited | Substrate cleaning method, substrate cleaning equipment, computer program and program recording medium |
KR100846690B1 (en) | 2004-06-04 | 2008-07-16 | 도쿄엘렉트론가부시키가이샤 | Substrate cleaning method and computer readable recording medium |
JP4324527B2 (en) * | 2004-09-09 | 2009-09-02 | 東京エレクトロン株式会社 | Substrate cleaning method and developing apparatus |
KR100940136B1 (en) * | 2006-08-29 | 2010-02-03 | 다이닛뽕스크린 세이조오 가부시키가이샤 | Substrate processing method and substrate processing apparatus |
CN101542684B (en) * | 2006-10-02 | 2013-10-23 | 兰姆研究股份公司 | Device and method for removing liquid from surface of disc-like article |
JP5090089B2 (en) | 2006-10-19 | 2012-12-05 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
JP5151629B2 (en) * | 2008-04-03 | 2013-02-27 | 東京エレクトロン株式会社 | Substrate cleaning method, substrate cleaning apparatus, developing method, developing apparatus, and storage medium |
JP4780808B2 (en) | 2009-02-03 | 2011-09-28 | 東京エレクトロン株式会社 | Development processing method and development processing apparatus |
JP5538102B2 (en) * | 2010-07-07 | 2014-07-02 | 株式会社Sokudo | Substrate cleaning method and substrate cleaning apparatus |
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