JP2015005743A5 - - Google Patents

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Publication number
JP2015005743A5
JP2015005743A5 JP2014112169A JP2014112169A JP2015005743A5 JP 2015005743 A5 JP2015005743 A5 JP 2015005743A5 JP 2014112169 A JP2014112169 A JP 2014112169A JP 2014112169 A JP2014112169 A JP 2014112169A JP 2015005743 A5 JP2015005743 A5 JP 2015005743A5
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JP
Japan
Prior art keywords
semiconductor device
light emitting
layer
emitting layer
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014112169A
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English (en)
Japanese (ja)
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JP2015005743A (ja
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Publication date
Priority claimed from US13/920,248 external-priority patent/US8964796B2/en
Application filed filed Critical
Publication of JP2015005743A publication Critical patent/JP2015005743A/ja
Publication of JP2015005743A5 publication Critical patent/JP2015005743A5/ja
Pending legal-status Critical Current

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JP2014112169A 2013-06-18 2014-05-30 電子ビームによりポンピングされる端面発光装置の構造およびそれを生産するための方法 Pending JP2015005743A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/920,248 2013-06-18
US13/920,248 US8964796B2 (en) 2013-06-18 2013-06-18 Structure for electron-beam pumped edge-emitting device and methods for producing same

Publications (2)

Publication Number Publication Date
JP2015005743A JP2015005743A (ja) 2015-01-08
JP2015005743A5 true JP2015005743A5 (enExample) 2017-07-06

Family

ID=52019180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014112169A Pending JP2015005743A (ja) 2013-06-18 2014-05-30 電子ビームによりポンピングされる端面発光装置の構造およびそれを生産するための方法

Country Status (2)

Country Link
US (1) US8964796B2 (enExample)
JP (1) JP2015005743A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10177534B2 (en) * 2015-04-27 2019-01-08 Sensor Electronic Technology, Inc. Electron beam pumping for light emission
KR101690430B1 (ko) * 2015-11-04 2016-12-27 전남대학교산학협력단 자외선 발광 소자
US10056735B1 (en) * 2016-05-23 2018-08-21 X Development Llc Scanning UV light source utilizing semiconductor heterostructures
US10135227B1 (en) 2017-05-19 2018-11-20 Palo Alto Research Center Incorporated Electron beam pumped non-c-plane UV emitters
US10277005B2 (en) 2017-09-13 2019-04-30 Palo Alto Research Center Incorporated Pumped edge emitters with metallic coatings
CN116754068A (zh) 2017-09-29 2023-09-15 苹果公司 连接的外延光学感测系统
US12206222B2 (en) 2020-08-20 2025-01-21 Apple Inc. Integrated edge-generated vertical emission laser
US12372724B2 (en) 2020-09-23 2025-07-29 Apple Inc. Light splitting device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2690286A1 (fr) * 1992-04-17 1993-10-22 Commissariat Energie Atomique Cavité laser à hétérostructure semi-conductrice dissymétrique et laser équipé de cette cavité.
US5461637A (en) * 1994-03-16 1995-10-24 Micracor, Inc. High brightness, vertical cavity semiconductor lasers
US5841802A (en) * 1996-08-30 1998-11-24 Mcdonnell Douglas Corporation Multiple, isolated strained quantum well semiconductor laser
US7590161B1 (en) 2004-10-05 2009-09-15 Photon Systems Electron beam pumped semiconductor laser
US20110188532A1 (en) * 2010-02-04 2011-08-04 Sanyo Electric Co., Ltd. Semiconductor Laser Apparatus
WO2011161775A1 (ja) * 2010-06-23 2011-12-29 株式会社日立製作所 電子線励起型発光装置
JP5833325B2 (ja) * 2011-03-23 2015-12-16 スタンレー電気株式会社 深紫外光源
JP5943738B2 (ja) * 2012-07-02 2016-07-05 スタンレー電気株式会社 深紫外レーザ光源

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