JP2015005709A - Lamination method, and lamination system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a lamination method and a lamination system by which a film-like laminate can be laminated well without damaging it even in the case of a brittle object to be laminated, such as a thinned semiconductor, or semiconductor including a very brittle material.SOLUTION: A lamination method for laminating a film-like laminate F to a brittle object W to be laminated comprises the steps of superposing the brittle object W to be laminated and the film-like laminate F, on each other and heating and applying a pressure to them. In the lamination method, the step of applying a pressure to the brittle object W to be laminated and the film-like laminate F includes the step of swelling an elastic film material 16 toward the brittle object W to be laminated set on a work-holder member 36 and loaded into a lamination device 12 from above in a vacuum chamber C of the lamination device 12.

Description

  The present invention relates to a laminating method and a laminating system, and more particularly to a laminating method and a laminating system related to laminating a film-like laminate on a brittle laminate to be transported while being placed on a mounting member.

  Conventionally, when laminating a film such as an NCF film on a laminated body such as a semiconductor wafer, a laminating apparatus using a roll as disclosed in Patent Document 1 has been used. In the case where the laminated body to be laminated is thin but flexible, it is also possible to carry out lamination molding by sending a continuous laminated body. Generally, the laminated body is placed on a carrier film. There is a method in which a film is placed, carried into a laminating apparatus, and laminated. In this method, when a laminated body such as a semiconductor wafer is placed on a carrier film or unloaded from the carrier film, it is necessary to contact the semiconductor wafer using a human hand or a loading / unloading robot.

However, in recent years, semiconductor wafers with a thickness of 0.3 mm or less and wafers using a brittle material made of a compound such as gallium nitride have emerged. When a semiconductor wafer is placed on a carrier film before lamination molding, the carrier film When unloading a laminated semiconductor wafer from the wafer, there has been a problem that the wafer is easily damaged when it comes into contact with the wafer. In addition, in the laminating apparatus using rolls, the pressure at the time of laminating becomes a linear load and is partially applied to the semiconductor wafer, so that there is a problem that the wafer is easily cracked as in the case of mounting or unloading. Further, in the case where bumps or the like are formed on the upper surface of the semiconductor wafer, there is a problem in that bumps and the like are easily tilted because a lateral force is applied to the bumps and the like when forming with a roll.

Therefore, as shown in Patent Document 2 and Patent Document 3, a film-shaped laminated body is also laminated on a semiconductor wafer using a laminating apparatus provided with a pressure film body that is an elastic body. If this laminating apparatus is used, it is possible to apply pressure to the semiconductor wafer substantially uniformly by the pressure film body, and the pressurization to the semiconductor wafer does not become linear pressure as in the laminating apparatus using a roll. There are advantages. In addition, the laminating apparatus provided with the pressurizing film body can press evenly even from a semiconductor wafer having protrusions such as bumps from above. It is also difficult to cause a protrusion such as a tip to fall.

However, in Patent Document 2, since the semiconductor wafer is directly placed on the carrier film and carried into a laminating apparatus having a pressurized film body, the carrier is placed when the semiconductor wafer is placed on the carrier film or after lamination. When carrying out from a film, it was necessary to move it in direct contact with a semiconductor wafer. In addition, Patent Document 3 does not clearly show how to carry semiconductors into and out of a laminating apparatus provided with a pressurized film body.

JP 2005-340335 A JP 2012-104782 A JP 2009-259924 A

  As described above, in Patent Document 1 to Patent Document 3, when a stacked body such as a semiconductor wafer is placed on a carrier film or unloaded from a carrier film, a semiconductor is used by using a human or loading / unloading robot. Although it was necessary to contact the wafer, when laminating brittle laminates such as thin semiconductors made in recent years and semiconductors made of highly brittle materials, it is carried into the laminating apparatus, laminating in the laminating apparatus, laminating apparatus From the point of carrying out from, the lamination method and the lamination | stacking system which can perform favorable lamination | stacking of a film-form laminated body are not established, without a brittle laminated body being damaged.

  The present invention has been made in view of the above-described problems. Even in the case of a brittle laminate such as a thinned semiconductor or a semiconductor made of a highly brittle material, the film-like laminate is not damaged. It is an object of the present invention to provide a lamination method and a lamination system capable of performing good lamination.

The invention according to claim 1 is a stacking method in which a brittle laminate and a film-like laminate are polymerized and heated and pressed to laminate the film-like laminate on the brittle laminate. The brittle laminate and the film-like laminate are pressed against the brittle laminate that has been placed in the stacking apparatus and bulged from above in a vacuum chamber of the lamination apparatus. It is characterized by being laminated.
In order to achieve the above object, the invention according to claim 2 is characterized in that, in the invention according to claim 1, the mounting member includes a frame-shaped wafer ring and a dicing tape attached to the wafer ring. It is characterized by comprising.
In order to achieve the above object, the invention according to claim 3 is the invention according to claim 2, wherein the thickness of the frame-shaped wafer ring is the sum of the thickness of the brittle laminate and the film-like laminate. It is characterized by being thicker than the thickness.
In order to achieve the above object, the invention according to claim 4 is the invention according to claim 2 or claim 3, wherein the wafer ring portion of the mounting member is held and carried into the stacking apparatus. It is characterized by carrying out.
In order to achieve the above object, the invention according to claim 5 uses the carrier film as the mounting member on which the brittle laminate and the film-like laminate are placed in the invention according to claim 1. Then, it is carried into and out of the laminating apparatus.
In order to achieve the above-mentioned object, the invention according to claim 6 laminates the film-like laminate on the brittle laminate by polymerizing the brittle laminate and the film-like laminate and heating and pressurizing them. In the lamination system, a lamination apparatus provided with an upper board, a lower board capable of forming a vacuum chamber between the upper board, and an elastic film body provided on the upper board and capable of bulging in the vacuum chamber; And a placing member that carries in and out in a state where the brittle laminate is placed in the laminating apparatus.
In order to achieve the object described above, the invention according to claim 7 is directed to the invention according to claim 3, wherein the mounting member includes a frame-shaped wafer ring and a dicing tape attached to the wafer ring. It is characterized by comprising.

The laminating method according to claim 1 of the present invention is a laminating method in which a brittle laminate and a film-like laminate are polymerized and heated and pressurized to laminate the film-like laminate on the brittle laminate. The brittle laminate and the film-like laminate are added to the brittle laminate that has been placed on the mounting member and carried into the laminating apparatus by expanding the elastic film body from above in the vacuum chamber of the laminating apparatus. Since the layers are pressed and stacked, the yield when the film-like laminate is laminated on the brittle laminate can be increased without being damaged during carry-in, carry-out or lamination.
A lamination system according to claim 6 of the present invention is a lamination system in which a brittle laminate and a film laminate are polymerized and heated and pressurized to laminate the film laminate on the brittle laminate. A laminating apparatus comprising a board, a lower board capable of forming a vacuum chamber between the upper board, an elastic film body provided on the upper board and capable of bulging in the vacuum chamber, and the laminating apparatus And a mounting member that carries in and out while the brittle laminate is placed thereon, so that the film-like laminate is laminated on the brittle laminate without being damaged during carrying in, carrying out or laminating. Can increase the yield.

It is explanatory drawing of the lamination apparatus when a vacuum chamber is closed and pressurization with an elastic film body is performed with respect to a semiconductor wafer. It is explanatory drawing of the lamination | stacking system at the time of the vacuum chamber being closed and pressurizing with the elastic film body with respect to a semiconductor wafer. It is explanatory drawing of a lamination system when the vacuum chamber of a lamination apparatus is open | released. It is a top view at the time of mounting a semiconductor wafer and a film-like laminated body on a mounting member. It is sectional drawing at the time of mounting a semiconductor wafer and a film-form laminated body on a mounting member. It is explanatory drawing of the lamination apparatus of the lamination system of another embodiment. It is explanatory drawing which shows the shaping | molding procedure of the lamination | stacking system of another embodiment, Comprising: It is a figure which shows the state which mounted the semiconductor wafer. It is explanatory drawing which shows the formation procedure of the lamination | stacking system of another embodiment, Comprising: It is a figure which shows the state which mounted the ring spacer. It is explanatory drawing which shows the shaping | molding procedure of the lamination system of another embodiment, Comprising: It is a figure which shows the state which mounted the film-like laminated body. It is explanatory drawing which shows the shaping | molding procedure of the lamination system of another embodiment, Comprising: It is a figure which shows the state which pressurized the semiconductor wafer and the film-form laminated body with the elastic film body.

The lamination system 11 of this embodiment is demonstrated with reference to FIG. The lamination system 11 according to the present embodiment laminates the film-like laminate F on the semiconductor wafer W by polymerizing the semiconductor wafer W and the film-like laminate F, which are brittle laminates, and heating and pressing. . The laminating system 11 includes a laminating apparatus 12 for laminating the semiconductor wafer W and the film-like laminate F, a transport mechanism 13 for the semiconductor wafer W and the film-like laminate F, and the like.

As shown in FIG. 1, the laminating apparatus 12 is provided with a lower board 15 opposite to an upper board 14. The lower board 15 can be raised and lowered with respect to the upper board 14, and a vacuum chamber C is formed between the upper board 14 and the lower board 15 when the upper board 14 and the lower board 15 are closed. ing. The vacuum chamber C can be sucked by a vacuum pump (not shown). An elastic film body 16 is provided on the lower surface side of the upper board 14 in the vacuum chamber C. The elastic film body 16 is not limited to this, but has a hardness (Shore A hardness) of 10 ° to 65 ° (more preferably 15 ° to 55 °) and a thickness of 1 mm to 6 mm (more preferably). 2 mm to 5 mm) of heat-resistant rubber such as silicon rubber. The elastic film body 16 is locked to the base 18 of the upper board 14 by a frame 17 and a bolt (not shown), and can bulge into the vacuum chamber C when pressurized. Further, fine irregularities are provided on the surface of the elastic film body 16. In addition, when laminating | stacking on the semiconductor wafer W which provided the bump on the surface, a bump is mounted facing the upper side, and the hardness of the elastic film body 16 by the side of the upper board 14 is the elastic fixed film body 23 by the side of the lower board 15. It is desirable to make it higher than the hardness.

Further, a hot plate 19 which is a part of the upper board is attached to the base 18 of the upper board 14. The heating plate 19 is provided with a cartridge heater (not shown) inside or a rubber heater (not shown) on the surface, and can be heated. A suction / compressed air supply hole 20 is formed through the base 18 and the hot plate 19 of the upper board 14 toward the back surface side of the elastic film body 16. An opening inside the apparatus of the suction / compressed air supply hole 20 is opened on the back side of the elastic film body 16, and an opening outside the apparatus is a vacuum pump and a compression pump (not shown) provided outside the upper panel 14. Is connected via a valve or the like.

Also for the lower board 15, a hot plate 21 that is a part of the lower board is provided on the base 22. An elastic fixing film body 23 is also attached to the upper surface of the hot plate 21 of the lower board 15. The elastic fixed film body 23 is made of heat-resistant rubber such as silicon rubber having a hardness (Shore A hardness) of 10 ° to 60 ° and a thickness of 1 mm to 6 mm. Further, fine irregularities are provided on the surface of the elastic fixing film body 23. A suction hole 24 is provided in a part of the lower plate 15. An opening inside the apparatus of the suction hole 24 is opened to the vacuum chamber C, and an opening outside the apparatus is connected to a vacuum pump (not shown). A sealing member such as an O-ring 26 is provided on the wall portion 25 around the lower plate 15, and when forming the vacuum chamber C, the upper surface of the wall portion 25 around the lower plate 15 and the O-ring 26 are a carrier to be described later. The films f1 and f2 are sandwiched or directly contact the lower surface of the frame 17 of the upper board 14. The vacuum chamber C is not limited to the above structure as long as it has a predetermined width and height.

Next, the transport mechanism 13 for the semiconductor wafer W and the film-like laminate F will be described. In the transport mechanism 13, the carrier film f <b> 1 fed from the unwinding roll 31 provided above the previous process side of the laminating apparatus 12 passes between the upper board 14 and the lower board 15 of the laminating apparatus 12, and the laminating apparatus. 12 is wound around a winding roll 32 provided above the subsequent process side. Further, the carrier film f2 fed from the unwinding roll 33 provided below the pre-process side of the laminating apparatus 12 passes between the upper board 14 and the lower board 15 of the laminating apparatus 12 and the post-process side of the laminating apparatus. Is wound around a take-up roll 34 provided below. The material of the carrier films f1 and f2 is a resin film such as polyethylene terephthalate as is well known.

More specifically describing the transport mechanism 13, the lower carrier film f <b> 2 is unwound from the unwinding roll 33, then the feeding direction is changed by the roller 35, and is fed to the laminating apparatus 12 in the horizontal direction. Then, a loading stage S1 for loading the mounting member 36 on which the semiconductor wafer W and the film-like laminate F are mounted on a portion where only the lower carrier film f2 is fed in the horizontal direction (portion where the upper portion is opened). Is provided. On the other hand, the feeding direction of the upper carrier film f1 is also changed by the rollers 37 and 38 so that it is superposed on the lower carrier film f1 on the laminating apparatus 12 side with respect to the carry-in stage S1 and sent to the laminating apparatus 12. In the subsequent process of the laminating apparatus 12, the lower carrier film f <b> 2 is fed in the horizontal direction even after the upper carrier film f <b> 1 is changed toward the take-up roll 32 by the roller 39. An unloading stage S2 is provided for unloading the mounting member 36 on which the semiconductor wafer W stacked on the portion where only the lower carrier film f2 is fed in the horizontal direction (the portion where the upper side is opened) is mounted. It has been. Thereafter, the lower carrier film f <b> 2 is wound around the take-up roll 34 with the feeding direction changed by the roller 40.

As another embodiment of the transport mechanism 13, a gripping and transporting device that grips both ends of the carrier films f1, f2, and the like with a chuck device between the laminating device 12 and the take-up rolls 32 and 34 and pulls them toward the subsequent process side. May be provided. Furthermore, the number of laminating apparatuses is not limited to one, and a plurality of laminating apparatuses may be provided, or a laminating apparatus 12 using the bulging elastic film body 16 may be provided with a press apparatus.

Furthermore, as still another embodiment of the transport mechanism, the wafer ring 41 portion of the mounting member on which the semiconductor wafer W that is a brittle stack and the film-shaped stack F that is a film-shaped stack is mounted. You may make it carry in and carry out directly to the lamination | stacking apparatus 12, hold | maintaining with the transfer apparatus which moves space, such as a multi-axis joint robot. In this case, the wafer ring 41 may be sandwiched and transported by the gripping part of the robot, or the wafer ring 41 may be transported by being placed on the holding part of the robot. Note that holding by the holding unit of the robot and placing it on the holding unit are included in holding the semiconductor wafer W or the like. In yet another embodiment, the carrier film f2 is not used for transporting the semiconductor wafer W.

Next, the mounting member 36 of the transport mechanism 13 will be described with reference to FIGS. The mounting member 36 for mounting the semiconductor wafer W and the film-like laminate F, which are brittle laminates, is a frame-shaped wafer ring (frame portion) 41 and a dicing tape (adhesive tape) attached to the wafer ring 41. It consists of f3. The wafer ring 41 is made of a material such as heat-resistant resin or metal, and is not limited thereto, but has a thickness of 1 to 5 mm and is provided with an inner hole H. Needless to say, the thickness of the wafer ring 41 is larger than the thickness of the semiconductor wafer W and the film-like laminate F. Further, the inner hole H of the wafer ring 41 is provided with a length equal to or larger than the diameter of the semiconductor wafer W so that the semiconductor wafer W to be placed is not in direct contact. In this embodiment, the outer peripheral shape of the wafer ring 41 and the inner peripheral shape of the inner hole H are rectangular with arcuate corners, but polygons such as rectangles and octagons, circles, ellipses, etc. It is not limited. As shown in FIG. 5, a dicing tape (adhesive film) f3 is formed on the lower surface 41a of the wafer ring 41 (on the back side of the wafer ring 41 when the semiconductor wafer W is placed) so as to close the inner hole H. Pasted.

Therefore, in the mounting member 36, the adhesive layer of the dicing tape f3 is stuck upward, and the dicing tape f3 in which the adhesive layer is exposed is provided in the portion of the inner hole H (the center portion) of the wafer ring 41. It will be. And the circular semiconductor wafer W is affixed on the part of the contact bonding layer of the said dicing tape f3, and also the rectangular film-form laminated material F is superposed | polymerized from it. As described above, the film-shaped laminated material F is generally cut into a size that can cover the entire surface of the semiconductor wafer W. In the film-shaped laminated material F, peripheral portions other than the portion that is in contact with the upper surface of the semiconductor wafer W are provided to face the dicing tape f3. In this case, the film-like laminated material F may be adhered to the dicing tape f3, or may simply be stacked. By adopting such a structure, the semiconductor wafer W and the film-like laminated material F are fixed on the mounting member 36 without being displaced. In addition, the shape of the film-shaped laminated body F is not limited to a rectangle, A circle may be sufficient and the continuous strip | belt-shaped thing may be sufficient so that it may mention later.

Next, a laminating method using the laminating system 11 of this embodiment will be described with reference to FIGS. The brittle laminate used in the lamination method of the present embodiment is not limited to this, but in the case of a semiconductor, a silicon wafer having a thickness of 0.3 mm or less, a compound semiconductor wafer such as gallium nitride, or silicon nitride Wafers made of brittle materials, such as wafers made of, are targeted. In particular, in the case of a semiconductor wafer W having a thickness of 0.01 mm to 0.1 mm, it is necessary to use the mounting member 36 made of the wafer ring 41 and the dicing tape f3. Further, the diameter of the semiconductor wafer W is not limited to this, but as an example, a wafer having a diameter of about 100 mm to 500 mm is laminated and tends to have a larger area in the future. If the semiconductor wafer W has the same thickness, the larger the diameter, the easier it is to break. These brittle semiconductor wafers W are more prone to cracking during handling and stacking than conventional wafers, and the yield tends to decrease. Alternatively, a semiconductor wafer W having a thickness of 0.01 mm to 0.1 mm or a wafer on which bumps are formed on the surface of the semiconductor wafer W is often inappropriate for pressurization by a roll laminator. A laminating apparatus 12 that performs pressure is desirable. In addition, as the film-like laminate to be laminated on the semiconductor wafer W, a film having insulating properties and adhesive properties such as an NCF film (Non Conductive Film) is used.

First, as shown in FIGS. 1 and 2, while the film stack F is being stacked on the semiconductor wafer W in the stacking apparatus 12, the loading stage S1 on the lower carrier film f2 is moved to the above-described stage. A set of mounting members 36 on which the semiconductor wafer W and the film-like laminate F are mounted is carried in. The loading operation at this time is performed using a handling robot (not shown). However, since only the wafer ring 41 is held by the robot chuck and loaded, the semiconductor wafer W is thin and easily broken. There is no problem. Further, the loading operation of the mounting member 36 may be performed manually by an operator, and in this case, the loading operation can be performed without contacting the semiconductor wafer W. Alternatively, the placement member 36 or the like may be carried from the belt conveyor or the like in the previous process to the foremost end of the carrier film f2 on the lower side of the lamination system 11. In this case, the mounting member 36 and the like are transferred without being grasped, but the shock is not directly applied to the semiconductor wafer W during the transfer.

At the same time, the loading member 36 is unloaded at the unloading stage S2. Similarly to the case of carrying in the mounting member 36, the wafer ring 41 of the mounting member 36 is gripped without touching the semiconductor wafer W by a handling robot or manpower. Or you may pass to the belt conveyor of a post process, without gripping.

When the stacking of the semiconductor wafers W is completed over a predetermined time in the stacking apparatus 12, the inside of the vacuum chamber C is returned to normal pressure, and then the lower board 15 is lowered as shown in FIG. The space between the lower board 15 is opened. Then, the upper and lower winding rolls 32 and 34 are driven to transfer the carrier films f1 and f2 from the pre-process side to the post-process side. As a result, the semiconductor wafer W and the mounting member 36 that have been stacked while being sandwiched between the upper carrier film f1 and the lower carrier film f2 are moved from the stacking apparatus 12 to the carry-out stage S2. At the same time, the semiconductor wafer W, the film-shaped laminated material F, and the mounting member 36 on the carrier film f2 on the lower side of the loading stage S1 are moved into the laminating apparatus 12. At this time, the upper and lower carrier films f1 and f2 are tension-controlled between the unwinding roll 31 and the winding roll 32 or between the unwinding roll 33 and the winding roll 34, so that the upper and lower boards 14, 15, the carrier films f1 and f2, the mounting member 36, and the like are prevented from sagging.

When the upper board 14 and the lower board 15 of the laminating apparatus 12 are closed again, the vacuum chamber C is formed, and vacuum suction in the vacuum chamber C is performed via the suction hole 24 by a vacuum pump (not shown). At this time, since the hot plate 19 of the upper board 14 and the hot plate 21 of the lower board 15 are heated, the layer on the semiconductor wafer W side of the film-like laminated material F or the entire film-like laminated material F is in a molten state. In addition, although the temperature of the hot plate 19 of the upper board 14 and the hot plate 21 of the lower board 15 is not limited to this, it is heated by about 80 degreeC thru | or 200 degreeC as an example. At this stage, it is desirable that the back side of the elastic film body 16 is still sucked by the vacuum pump and no pressure is applied. When a predetermined time has elapsed, as shown in FIGS. 1 and 2, compressed air is introduced from the compression pump through the suction / compressed air supply hole 20 to the back side of the elastic film body 16 on the upper panel 14 side, The elastic film body 16 is swelled in the vacuum chamber C. Thus, the film-shaped laminated material F is pressed toward the upper surface of the semiconductor wafer W by the elastic film body 16 via the carrier film f1. Further, the back surface side of the semiconductor wafer W is pressed toward the elastic fixed film body 23 attached to the hot plate 21 of the lower board 15 through the dicing tape f3 and the carrier film f2.

At this time, it is convenient to pressurize the semiconductor wafer W placed on the placement member 36 by expanding the elastic film body 16 from the upper surface side for the following reason. By applying pressure from the upper surface side, the dicing tape f3 adhered to the lower surface side of the wafer ring 41 of the mounting member 36 is pressed against the lower elastic fixed film body 23. At that time, the dicing tape f3 is almost bent. No or small. On the other hand, if an elastic film body on the lower board 15 side is provided and the elastic film body on the lower board 15 side is bulged, the dicing tape f3 is lifted and bent greatly, and at the same time, the portion around the semiconductor wafer W is also bent. Since it warps, it becomes easy to break. Further, the warped semiconductor wafer W is easily cracked due to a difference in expansion / contraction ratio due to air cooling. Further, the dicing tape f3 itself is easily broken. Further, when pressure is applied by the elastic film body provided on the lower plate 15 side, the entire mounting member 36 is lifted by the swelling of the elastic film body, and is displaced from the center of the vacuum chamber C of the laminating apparatus 12. There is a case. In this case, a part of the film-like laminate in which the semiconductor wafer W protrudes from between the carrier films f1 and f2 and adheres to the vacuum chamber C of the laminating apparatus 12, or the pressure by the elastic film body is uneven. Or the handling of the subsequent process at the carry-out stage S2 may be defective.

In addition to the above, it is conceivable that the film-like laminate such as the NCF film, the semiconductor wafer W, and the placement member 36 including the dicing tape f3 are placed in this order from the bottom and pressed by the elastic film body 16 from below. Also here, when the whole is lifted by the elastic film body 16, the semiconductor wafer W may be broken. In addition, when the semiconductor wafer W is loaded or unloaded, the semiconductor wafer W is not limited, and is mounted when the semiconductor wafer W is attached to or removed from the dicing tape f3 of the mounting member 36 in the previous process or the subsequent process. A process such as reversing the mounting member 36 is required.

The pressure (surface pressure applied to the semiconductor wafer W) at the time of pressurizing the film-like laminate such as the NCF film and the semiconductor wafer W by the laminating apparatus 12 is not limited to this, but is 0.2 MPa to 1 as an example. Pressurized within a range of 0.0 MPa. The pressurization time is not limited to this, but as an example, pressurization is performed for a time of about 15 seconds to 90 seconds. When the predetermined time has elapsed and the lamination molding using the elastic film body 16 in the laminating apparatus 12 is completed, the supply of compressed air on the back side of the elastic film body 16 is cut off, and the elastic film body 16 is heated again. Suction toward 19. Then, the inside of the vacuum chamber C is opened to the atmospheric pressure to return to normal pressure, and the lower chamber 15 is lowered again as shown in FIG. 3 to open the vacuum chamber C. By these procedures, the lamination of the film-like laminate F onto the semiconductor wafer W is repeated by the batch type laminating apparatus 12. Although the surplus portion of the film-like laminate F remains on the semiconductor wafer W after lamination, the surplus portion is cut and removed on the carrier film f2 after lamination or in a later step.

In the above embodiment, the film-like laminate F is attached to the mounting member 36 together with the semiconductor wafer W and conveyed. However, the film-like laminate F may be a belt-like continuous film. When the film-like laminate F is a continuous film, a belt-like film is formed on the semiconductor wafer W placed on the placement member 36 in a state where a protective film or the like is wound from the unwinding roll of the film-like laminate F. The laminated laminates F are supplied to the laminating apparatus 12 so as to overlap, and after being pressurized by the laminating apparatus 12, they are carried out. The laminated semiconductor wafer W and the strip-like film-like laminate F are placed on the lower carrier film f2, and an excess portion of the film-like laminate F is cut from the laminated semiconductor wafer W. .

In the above embodiment, the film-like laminate F and the semiconductor wafer W are placed on the placement member 36, placed on the carrier fill f2, and transported. However, the semiconductor wafer W may be transported directly to and from the pressurization position in the center of the laminating apparatus 12 while holding the wafer ring 41 portion by the gripping part of the multi-axis joint robot. In this case, it is also assumed that the film-like laminate F melts and adheres to the elastic film 16 or the like when being pressed by the laminating apparatus 12. Therefore, it is also assumed that a protective film having such a size as to come into contact with the upper surface of the wafer ring 41 is placed on the film-like laminate F. The area of the protective film needs to be larger than the area of the film-like laminate F so that at least the film-like laminate F does not protrude, and is preferably equal to or less than the area of the wafer ring 41. Since the lower surface side of the semiconductor wafer W is covered with the dicing tape f3, a protective film is unnecessary. When the lamination molding is completed, the semiconductor wafer W is again transferred to the outside of the laminating apparatus 12 with the articulated robot holding the portion of the wafer ring 41 again. In this case, the semiconductor wafer W may be moved again toward the same side as that carried by one robot, or the semiconductor wafer W etc. may be moved in one direction using two robots. . And after that, when a protective film is piled up, a protective film is removed. (Or the excess part of the film-like laminate F and the protective film may be cut first.)

A case where a carrier film is not used for transporting the semiconductor wafer W will be described as a second embodiment. As shown in FIG. 6, the basic structure of the laminating apparatus 52 of the laminating system 51 is almost the same as the laminating apparatus 11 of the present embodiment shown in FIG. 1 and the like. I will explain. On the upper surface of the hot plate 54 (mounting plate) of the lower plate 53 of the laminating apparatus 52, a recess 55 for mounting the wafer ring 41 is formed. A suction hole 56 is formed in the bottom surface 55 a inside the recess 55. A mounting table 57 for a semiconductor wafer W made of a porous material is disposed in the center of the recess 55. The height of the mounting table 57 is higher than the height of the bottom surface of the concave portion 55, and is, for example, the same height as the upper surface on the outer side of the concave portion 55. However, in some cases, the height of the mounting table 57 may be the same height as the bottom surface 55a. The back surface side of the mounting table 57 is connected to a hole 58 formed for suction. The suction hole 55 and the hole 58 are each connected to a vacuum pump via an open / close valve or the like. The stacking system 51 includes a transfer device (not shown) composed of an articulated robot that holds and conveys the wafer ring 41 and a ring spacer 59 described later.

Next, a lamination molding method of the semiconductor wafer W and the film-like laminate F by the lamination system 51 will be described with reference to FIGS. First, as shown in FIG. 6 and FIG. 7, the semiconductor wafer W placed on the mounting member 36 is held by the wafer ring 41 by suction by the transfer device, and the lower plate 53 of the stacking device 52 opened. Is placed inside the recess 55 of the hot plate 54. As for the mounting member 36, the dicing tape f3 is stuck upward on the wafer ring 41 as in the embodiment of FIG. 1 and the like. In the initial state, the semiconductor wafer W is placed on the dicing tape f3. Only the film-like laminated body F is not piled up. When the semiconductor W placed on the placement member 36 is placed in the recess 55 of the hot plate 54, the portion of the dicing tape f3 on the back side of the semiconductor W is placed on the placement made of a porous material from the suction hole 58. Suction is performed through the table 57. The portion of the wafer ring 41 is sucked and held from the suction hole 56 through the dicing tape f3.

Next, as shown in FIG. 8, the ring spacer 59 is placed on the portion between the semiconductor wafer W and the wafer ring 41 by the transfer device. As for the shape of the ring spacer 59, the shape of the inner peripheral hole is preferably circular, and the outer shape is similar to the inner peripheral hole of the wafer ring. The purpose of placing the ring spacer 59 is to prevent the elastic film body 16 from adhering to the dicing tape f3 whose adhesive surface is directed to the upper surface when the elastic film body 16 is pressed during pressurization. This is because when a film-like laminate F to be described later is placed, the film-like laminate F and the dicing tape f3 are brought into contact with each other to prevent a space from being formed therein. The ring spacer 59 may be overlaid on the mounting member 36 together with the semiconductor wafer W from the beginning. Depending on the size of the semiconductor wafer W and the wafer ring 41, it is not essential to provide the ring spacer 59.

Next, as shown in FIG. 9, the film-like laminate F (NCF film) adsorbed by another adsorption transfer tool of the transfer apparatus is placed on the semiconductor wafer W so as to cover the entire surface. . At this time, the gap between the semiconductor wafer W and the ring spacer 59 is covered with the film-like laminate F, and the dicing tape f3 is not exposed. Next, the upper board 60 and the lower board 53 of the laminating apparatus 52 are joined to form a chamber therein, and the inside of the chamber is vacuumed. Thereafter, as shown in FIG. 10, a film-like laminate is formed by supplying the pressurized air to the back side of the elastic membrane 16 provided on the upper panel 60 of the laminating device 52 and causing the elastic membrane 16 to bulge. The semiconductor wafer W is pressed through F, and the two are laminated to form a laminate. At this time, the ring spacer 59 applies tension to the dicing tape f3 and prevents the elastic film body 16 and the dicing tape f3 from sticking to each other. When the lamination molding is completed, the space between the upper board 60 and the lower board 53 is opened, and only the ring spacer 59 is sucked and removed first by the transfer device. At the same time or before and after this, pressurized air is supplied through the holes 58 and the mounting table 57 made of a porous material, and the back side of the semiconductor wafer W is released first. Next, pressurized air is supplied also from the hole 56 and the upper surface of the wafer ring 41 is sucked and taken out.

In another embodiment, if vacuum suction between the semiconductor wafer W and the film-like laminate F is possible, the semiconductor wafer W and the ring spacer 59 or the film-like laminate F are placed on the mounting member 36 from the beginning. You may make it carry in what was mounted. Further, in the laminating apparatus 52 of another embodiment, the mounting member 36 may be positioned by providing a positioning projection or the like around the heat plate 54 instead of forming the recess 55 in the heat plate 54. Further, if the laminating device 52 can at least hold the mounting member 36 on the lower plate 53, an elastic film body such as silicon rubber is pasted on the upper surface of the heat plate 54 of the lower plate 53, and a semiconductor is formed thereon. A portion on which the wafer W is placed may be mounted. In that case, it is desirable to suck a portion other than the portion on which the semiconductor wafer W is placed through a hole formed in the elastic film body or another member.

The present invention is not enumerated one by one, but is not limited to that of the above-described embodiment, and it goes without saying that those skilled in the art also apply modifications made in accordance with the spirit of the present invention. is there. The brittle laminate used in the laminating method and the laminating system of the present invention includes all semiconductor wafers and nitride semiconductor wafers having a plate thickness of 0.3 mm or less, as well as wiring boards having a plate thickness of 0.3 mm or less. , A solar cell of 0.3 mm or less, an optical waveguide, a substrate (green sheet) containing a ceramic before sintering, and the like regardless of the plate thickness. As for the thickness of the semiconductor wafer W, those having a thickness of 0.01 mm to 0.05 mm are particularly apt to break during handling, so the present invention is very effective.

DESCRIPTION OF SYMBOLS 11 Laminating system 12 Laminating apparatus 13 Conveying mechanism 14 Upper board 15 Lower board 16 Elastic film body 36 Mounting member 41 Wafer ring (frame part)
C Vacuum chamber F Film-like laminate H Inner hole W Semiconductor wafer f1, f2 Carrier film f3 Dicing tape (adhesive tape)

Claims (7)

In a laminating method of laminating a film laminate on a brittle laminate by polymerizing a brittle laminate and a film laminate and heating and pressurizing,
For the brittle laminate to be placed on the placement member and carried into the laminating apparatus,
A laminating method characterized in that an elastic film body is bulged from above in a vacuum chamber of a laminating apparatus, and a brittle laminate and a film-like laminate are pressurized and laminated. The laminating method according to claim 1, wherein the mounting member includes a frame-shaped wafer ring and a dicing tape attached to the wafer ring. The lamination method according to claim 2, wherein the thickness of the frame-shaped wafer ring is thicker than the thickness of the brittle laminate and the film-like laminate. The lamination method according to claim 2 or 3, wherein a wafer ring portion of the mounting member is held and carried into and out of the laminating apparatus. The laminating method according to claim 1, wherein the placing member on which the brittle laminate and the film-like laminate are placed are carried into and out of the laminating apparatus using a carrier film. In a laminating system for laminating a film laminate on a brittle laminate by polymerizing a brittle laminate and a film laminate and heating and pressing,
The upper board,
A lower plate capable of forming a vacuum chamber with the upper plate;
A laminating apparatus provided with an elastic film body provided on the upper board and capable of bulging in the vacuum chamber;
A loading member that carries in and out in a state where a brittle laminate is placed in the laminating apparatus;
A laminated system characterized by comprising: The stacking system according to claim 6, wherein the mounting member includes a frame-shaped wafer ring and a dicing tape attached to the wafer ring.