JP2014527720A - 電界効果トランジスタの非接触制御のためのシステム - Google Patents
電界効果トランジスタの非接触制御のためのシステム Download PDFInfo
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- JP2014527720A JP2014527720A JP2014525524A JP2014525524A JP2014527720A JP 2014527720 A JP2014527720 A JP 2014527720A JP 2014525524 A JP2014525524 A JP 2014525524A JP 2014525524 A JP2014525524 A JP 2014525524A JP 2014527720 A JP2014527720 A JP 2014527720A
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- 230000005669 field effect Effects 0.000 title claims abstract description 11
- 230000005684 electric field Effects 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 239000004698 Polyethylene Substances 0.000 claims description 3
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 3
- -1 polyethylene Polymers 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- 230000006837 decompression Effects 0.000 claims 2
- 230000001747 exhibiting effect Effects 0.000 claims 2
- 239000002800 charge carrier Substances 0.000 abstract description 3
- 230000006698 induction Effects 0.000 abstract description 2
- 238000000926 separation method Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 239000003574 free electron Substances 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000013070 direct material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Health & Medical Sciences (AREA)
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- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Biochemistry (AREA)
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- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
本出願は、2011年8月16日に出願された米国仮特許出願第61/524,233号の継続出願であり、この出願の内容を本明細書に組み込む。
2 基板
3 ソース
4 ドレイン
5 ゲート
6 スティック
40 容器又は管
42a 加速電極
42b 参照電極
45 FETトランジスタ
47 自由電子
Claims (8)
- 活性領域を有する電界効果トランジスタを制御する方法であって、減圧された空間にて自由電荷を前記トランジスタの前記活性領域付近に移動させ、それにより、前記自由電荷が、前記活性領域における電界を変更し、且つ、前記トランジスタの端子にかかる電圧及び/又は前記トランジスタを流れる電流を修正する方法。
- 前記自由電荷が、前記自由電荷を少なくとも部分的に弾性的にその上で散乱させる壁部により画成された減圧された容器内に予め注入されている請求項1に記載の方法。
- 前記自由電荷が電子であり、前記減圧された容器が、1.5eV以上の負の電子親和力を呈する壁を有する請求項1または2に記載の方法。
- 前記減圧容器が、ポリエチレン若しくはパリレン又は活性SiO2からつくられた壁を有する請求項1〜3のいずれか1項に記載の方法。
- 2つの電子デバイスを相互接続する方法であって、一方の電子デバイスが、請求項1〜4のいずれか1項に記載の方法の1つによって他方の電子デバイスにより制御される電界効果トランジスタを入力として有する方法。
- 活性領域を有する電界効果トランジスタを制御するための装置であって、2つの端部を有する減圧された容器を備え、前記減圧された容器が、予め自由電荷を注入され、且つ、前記自由電荷を少なくとも部分的に弾性的にその上で散乱させることができる壁部を有し、前記電界効果トランジスタが一方の端部付近にあり、他方の端部が、前記自由電荷を前記電界効果トランジスタに向かって加速させるトランスミッタ手段を有し、これにより前記自由電荷が、前記活性領域における電界を変更し、且つ、前記トランジスタの端子にかかる電圧及び/又は前記トランジスタを流れる電流を修正する装置。
- 前記自由電荷が電子であり、前記減圧された容器が、1.5eV以上の負の電子親和力を呈する壁を有する請求項6に記載の装置。
- 前記減圧容器が、ポリエチレン若しくはパリレン又は活性SiO2からつくられた壁を有する請求項6または7に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161524233P | 2011-08-16 | 2011-08-16 | |
US61/524,233 | 2011-08-16 | ||
PCT/IB2012/053917 WO2013024386A2 (en) | 2011-08-16 | 2012-07-31 | System for a contactless control of a field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014527720A true JP2014527720A (ja) | 2014-10-16 |
JP5916861B2 JP5916861B2 (ja) | 2016-05-11 |
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Application Number | Title | Priority Date | Filing Date |
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JP2014525524A Active JP5916861B2 (ja) | 2011-08-16 | 2012-07-31 | 電界効果トランジスタの非接触制御のためのシステム |
Country Status (5)
Country | Link |
---|---|
US (1) | US9762233B2 (ja) |
JP (1) | JP5916861B2 (ja) |
KR (1) | KR101774480B1 (ja) |
IL (1) | IL230675A (ja) |
WO (1) | WO2013024386A2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20240105676A1 (en) | 2019-10-14 | 2024-03-28 | Zero Ec Sa | Integrated electronic structure and data communication between components of the structure |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5772366A (en) * | 1980-08-27 | 1982-05-06 | Siemens Ag | Monolithic integrated circuit and method of driving same |
JPH10107273A (ja) * | 1996-09-30 | 1998-04-24 | Fuji Electric Co Ltd | 半導体装置 |
JPH11509366A (ja) * | 1995-06-30 | 1999-08-17 | ラドス テクノロジイー オーワイ | フローティング・ゲートが有るmosfetを含む受光素子 |
JP2003505844A (ja) * | 1999-07-26 | 2003-02-12 | アドバンスド ビジョン テクノロジーズ,インコーポレイテッド | 真空電界効果デバイスおよびその製造方法 |
US20080136455A1 (en) * | 2005-01-21 | 2008-06-12 | Novatrans Group Sa | Electronic Device and Method and Performing Logic Functions |
JP2010511342A (ja) * | 2006-11-30 | 2010-04-08 | ノバトランス グループ エスエイ | 論理関数を実行する電気デバイス |
Family Cites Families (10)
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---|---|---|---|---|
GB2267761B (en) * | 1992-06-02 | 1996-01-17 | Hitachi Europ Ltd | Method of electrically testing a sample |
DE9210134U1 (de) * | 1992-07-29 | 1992-09-24 | Schoenmaekers, Johannes G., Meerssen | Umfangsdichtung für eine Unterdruckkammer an einer Zuteilvorrichtung |
US6618866B1 (en) * | 2000-02-08 | 2003-09-16 | Sealand Technology, Inc. | Vacuum tank construction |
US6632369B2 (en) * | 2001-07-11 | 2003-10-14 | Archimedes Technology Group, Inc. | Molten salt collector for plasma separations |
US7015452B2 (en) * | 2001-10-09 | 2006-03-21 | Itt Manufacturing Enterprises, Inc. | Intensified hybrid solid-state sensor |
GB2395065B (en) | 2002-10-30 | 2005-01-19 | Toumaz Technology Ltd | Floating gate transistors |
WO2004109282A1 (en) * | 2003-06-10 | 2004-12-16 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Electronic device for communication with living cells |
JP4669213B2 (ja) | 2003-08-29 | 2011-04-13 | 独立行政法人科学技術振興機構 | 電界効果トランジスタ及び単一電子トランジスタ並びにそれを用いたセンサ |
US20090263641A1 (en) * | 2008-04-16 | 2009-10-22 | Northeast Maritime Institute, Inc. | Method and apparatus to coat objects with parylene |
US8183903B2 (en) * | 2009-12-03 | 2012-05-22 | Semtech Corporation | Signal interpolation methods and circuits |
-
2012
- 2012-07-31 WO PCT/IB2012/053917 patent/WO2013024386A2/en active Application Filing
- 2012-07-31 KR KR1020147007085A patent/KR101774480B1/ko active IP Right Grant
- 2012-07-31 US US14/238,846 patent/US9762233B2/en active Active
- 2012-07-31 JP JP2014525524A patent/JP5916861B2/ja active Active
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2014
- 2014-01-28 IL IL230675A patent/IL230675A/en not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5772366A (en) * | 1980-08-27 | 1982-05-06 | Siemens Ag | Monolithic integrated circuit and method of driving same |
JPH11509366A (ja) * | 1995-06-30 | 1999-08-17 | ラドス テクノロジイー オーワイ | フローティング・ゲートが有るmosfetを含む受光素子 |
JPH10107273A (ja) * | 1996-09-30 | 1998-04-24 | Fuji Electric Co Ltd | 半導体装置 |
JP2003505844A (ja) * | 1999-07-26 | 2003-02-12 | アドバンスド ビジョン テクノロジーズ,インコーポレイテッド | 真空電界効果デバイスおよびその製造方法 |
US20080136455A1 (en) * | 2005-01-21 | 2008-06-12 | Novatrans Group Sa | Electronic Device and Method and Performing Logic Functions |
JP2010511342A (ja) * | 2006-11-30 | 2010-04-08 | ノバトランス グループ エスエイ | 論理関数を実行する電気デバイス |
Also Published As
Publication number | Publication date |
---|---|
JP5916861B2 (ja) | 2016-05-11 |
WO2013024386A2 (en) | 2013-02-21 |
KR20140083990A (ko) | 2014-07-04 |
KR101774480B1 (ko) | 2017-09-04 |
IL230675A0 (en) | 2014-03-31 |
US9762233B2 (en) | 2017-09-12 |
WO2013024386A3 (en) | 2013-07-04 |
IL230675A (en) | 2016-08-31 |
US20140197877A1 (en) | 2014-07-17 |
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