JP2014526033A - γ−準安定相のウランとモリブデンを主成分とする合金の粉末、この粉末を含む粉末組成物、及び前記粉末と組成物の使用法 - Google Patents
γ−準安定相のウランとモリブデンを主成分とする合金の粉末、この粉末を含む粉末組成物、及び前記粉末と組成物の使用法 Download PDFInfo
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- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 114
- 239000000956 alloy Substances 0.000 title claims abstract description 114
- 239000000843 powder Substances 0.000 title claims abstract description 80
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 title claims abstract description 45
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 239000011733 molybdenum Substances 0.000 title claims abstract description 44
- 229910052770 Uranium Inorganic materials 0.000 title claims abstract description 41
- 229910052750 molybdenum Inorganic materials 0.000 title claims abstract description 39
- 239000000203 mixture Substances 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims description 22
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 66
- 239000003758 nuclear fuel Substances 0.000 claims abstract description 30
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- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- 230000002285 radioactive effect Effects 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 84
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 82
- 229910052710 silicon Inorganic materials 0.000 claims description 39
- 239000010703 silicon Substances 0.000 claims description 39
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- 239000011159 matrix material Substances 0.000 claims description 18
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910002056 binary alloy Inorganic materials 0.000 claims description 7
- 229910052729 chemical element Inorganic materials 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
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- GKLVYJBZJHMRIY-OUBTZVSYSA-N Technetium-99 Chemical compound [99Tc] GKLVYJBZJHMRIY-OUBTZVSYSA-N 0.000 abstract description 3
- 238000002059 diagnostic imaging Methods 0.000 abstract description 3
- 229940056501 technetium 99m Drugs 0.000 abstract description 3
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- 230000003993 interaction Effects 0.000 description 18
- 238000013507 mapping Methods 0.000 description 10
- 229910000711 U alloy Inorganic materials 0.000 description 9
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- 238000005240 physical vapour deposition Methods 0.000 description 7
- 230000009257 reactivity Effects 0.000 description 7
- 238000011160 research Methods 0.000 description 7
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- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
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- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- KTEXACXVPZFITO-UHFFFAOYSA-N molybdenum uranium Chemical compound [Mo].[U] KTEXACXVPZFITO-UHFFFAOYSA-N 0.000 description 3
- JFALSRSLKYAFGM-OIOBTWANSA-N uranium-235 Chemical compound [235U] JFALSRSLKYAFGM-OIOBTWANSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000000995 aerosol-assisted chemical vapour deposition Methods 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
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- 238000001928 direct liquid injection chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000000663 remote plasma-enhanced chemical vapour deposition Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002365 hybrid physical--chemical vapour deposition Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000007928 solubilization Effects 0.000 description 1
- 238000005063 solubilization Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/14—Treatment of metallic powder
- B22F1/142—Thermal or thermo-mechanical treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/16—Metallic particles coated with a non-metal
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0408—Light metal alloys
- C22C1/0416—Aluminium-based alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/02—Alloys based on aluminium with silicon as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C43/00—Alloys containing radioactive materials
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/223—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating specially adapted for coating particles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21C—NUCLEAR REACTORS
- G21C21/00—Apparatus or processes specially adapted to the manufacture of reactors or parts thereof
- G21C21/02—Manufacture of fuel elements or breeder elements contained in non-active casings
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21C—NUCLEAR REACTORS
- G21C3/00—Reactor fuel elements and their assemblies; Selection of substances for use as reactor fuel elements
- G21C3/42—Selection of substances for use as reactor fuel
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21C—NUCLEAR REACTORS
- G21C3/00—Reactor fuel elements and their assemblies; Selection of substances for use as reactor fuel elements
- G21C3/42—Selection of substances for use as reactor fuel
- G21C3/58—Solid reactor fuel Pellets made of fissile material
- G21C3/60—Metallic fuel; Intermetallic dispersions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/30—Nuclear fission reactors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
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- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Powder Metallurgy (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
−合金粒子が、アルミニウムマトリクス内に分散された場合に、そのような粒子の表面上に、中性子照射を受けるアルミニウムの拡散に対する障壁を形成し、その障壁が、その厚さに応じて、U(Mo)―アルミニウム相互作用の存在を可能にし、したがって、中性子照射を受けたとき好ましくない特性を有するアルミニウムに富む化合物の形成を大幅に減少するか又は完全になくすことを可能にする。
−合金粒子が、アルミニウムとシリコンのマトリクス内に分散された場合に、核燃料要素の製造中に適用される熱処理の際にシリコンがそのような合金粒子の方に拡散される速度を高めて、その手段によって、前述の非特許文献5〜8で得られた層よりもシリコンに富みかつ厚く、したがって中性子照射を受けたアルミニウムの拡散に対してより保護特性の高い相互作用層を形成させることに気付いた。
−従来の熱CVD、有機金属CVD(MOCVD)、大気圧CVD(APCVD)、減圧CVD(LPCVD)、超高真空CVD(UHVCVD)、エーロゾル支援CVD(AACVD)、直接液体注入CVD(DLICVD)、高速熱CVD(RTCVD)、開始CVD(iCVD)、原子層CVD(ALCVD)、ホットワイヤCVD(HWCVD)、プラズマ強化CVD(PECVD)、遠隔プラズマ強化CVD(RPECVD)、マイクロ波プラズマCVD(MWPCVD)など、より一般にCVDとして知られる全ての形態の化学蒸着技術、
−陰極スパッタPVD、真空蒸発PVD、イオンビームスパッタリングPVD、アークPVD、例えば陰極アークPVD、パルスレーザ蒸着(PLD)など、より一般にPVDとして知られる全ての形態の物理蒸着技術、
−複合物理化学蒸着技術(HPCVD)、
−メカノフュージョン、特許文献1に記載されたような「ハイブリタイザ」法、磁気支援衝突による被覆、回転流動層、シータグラインダ(theta grinder)、高剪断ミキサ、変調圧力ペレタイザなど、マイクロメトリック粒子(基板粒子)の表面に極微粒子(被覆粒子)を強力に接着する、全ての形態の機械的作用による堆積技術によって覆われてもよい。
−U(Mo)二元合金、即ち、ウランとモリブデンだけから成る合金、この場合、モリブデンは、この合金の5〜15質量%が好ましく、より好ましくは7〜10質量%であり、
−U(MoX)三元合金、式中、Xは、ウランとモリブデン以外の、中性子照射を受ける核燃料の特性を更に改善することができる化学元素であり、その場合、モリブデンは、この合金の5〜15質量%が好ましく、より好ましくは7〜10質量%であり、一方、Xは、特にチタン、ジルコニウム、クロミウム、ニオブ、白金、スズ、ビスマス、ルテニウム若しくはパラジウムなどの金属、又はシリコンなどの半導体でよく、典型的には合金の6質量%以下、より好ましくは4質量%以下である。
パルスレーザ蒸着技術によって、厚さ約50、100および400nmのアルミナ層を、長さ4±0.5mm、幅4±0.5mm、及び厚さ1±0.5mmを有する基板上に堆積させ、この基板は、γ−準安定相の8質量%のモリブデンを含むウランとモリブデンの合金(γ−U(8Mo))から成る。
−最初に、この基板上に堆積されたアルミナ層の厚さを測定する。この測定は、この層の破断とその横断面の観察によって行われる。
−次に、アルミナ堆積体の品質と、特にアルミナ層の表面に見えるマイクロメトリック規模の欠陥の存在を評価する。
上の実施例1で示されたようなアルミナ層で覆われたγ−U(8Mo)合金で作成された基板の化学反応性は、熱処理によって活性化された拡散対で、最初にアルミニウムが存在する状態で試験され、次に7質量%のシリコンを含むアルミニウムとシリコンの合金(Al(7Si))がある状態で試験される。
−参照数字1と1’はそれぞれ、γ−U(8Mo)合金で作成された基板を埋め込む前と後の、アルミニウム又はAl(7Si)合金で作成された部分にそれぞれ対応し、
−参照番号2と2’はそれぞれ、この基板を埋め込む前と後のγ−U(8Mo)合金で作成された基板に対応し、
−参照番号3’と3はそれぞれ、前記基板を埋め込む前と後のこの基板を覆うアルミナ層に対応する。
−まず、γ−U(8Mo)/Al又はγ−U(8Mo)/Al(7Si)界面に相互作用ゾーンが形成されたかどうかを決定し、形成された場合は、その相互作用ゾーンの厚さを測定する。
−次に、拡散対のγ−U(8Mo)/Al又はγ−U(8Mo)/Al(7Si)界面にある酸素とアルミニウムをマッピングする。このγ−U(8Mo)合金で作成された基板は、アルミナ層を局所化するようにそのアルミナ層で覆われている。
−最後に、Al(7Si)合金を含む拡散対のγ−U(8Mo)/Al(7Si)界面にあるシリコンをマッピングする。
図5A:γ−U(8Mo)/Al2O3/Al、Al2O3≒50nm;
図5B:γ−U(8Mo)/Al2O3/Al、Al2O3≒100nm;
図5C:γ−U(8Mo)/Al2O3/Al、Al2O3≒400nm;
図5D:γ−U(8Mo)/Al。前の3つの対の参考。
図6A、図6B及び図6C:γ−U(8Mo)/Al2O3/Al、Al2O3≒50nm;
図7A、図7B及び図7C:γ−U(8Mo)/Al2O3/Al、Al2O3≒400nm;
図8A:γ−U(8Mo)/Al2O3/Al(7Si)、Al2O3≒400nm;
図8B:γ−U(8Mo)/Al(7Si)。図8Aの拡散対の参考。
図9A、図9B及び図9C:γ−U(8Mo)/Al2O3/Al(7Si)、Al2O3≒400nm。
2、2’ 基板
3、3’ 基板を覆うアルミナ層
Claims (22)
- γ−準安定相でウランを主成分としモリブデンを含む合金の粉末であって、前記合金から成る核を含む粒子から形成され、前記核が、前記核に接して位置するアルミナ層で覆われた粉末。
- 前記アルミナ層が、少なくとも厚さ50nmである、請求項1に記載の粉末。
- 前記アルミナ層が、50nm〜3μmの範囲である、請求項2に記載の粉末。
- 前記粒子が、1μm〜300μmの範囲の寸法を有する、請求項1〜3のいずれか一項に記載の粉末。
- ウランを主成分にしモリブデンを含む前記合金が、ウランとモリブデンの二元合金である、請求項1〜4のいずれか一項に記載の粉末。
- 前記合金の質量モリブデン含有率が、5〜15%の範囲である、請求項5に記載の粉末。
- ウランを主成分にしモリブデンを含む前記合金が、ウラン、モリブデン、及びウランとモリブデン以外の化学元素Xの三元合金である、請求項1〜4のいずれか一項に記載の粉末。
- 前記化学元素Xが、金属と半導体の中から選択された、請求項7に記載の粉末。
- 前記合金の質量モリブデン含有率が、5〜15%の範囲であり、前記化学元素Xの質量含有率が、6%以下である、請求項7又は請求項8に記載の粉末。
- アルミニウムを含む粉末と混合された、請求項1〜9のいずれか一項によるγ−準安定相のウランを主成分としでモリブデンを含む合金の粉末を含む、粉末組成物。
- 前記アルミニウムを含む粉末が、少なくとも80%の質量アルミニウム含有率を有する、請求項10に記載の粉末組成物。
- 前記アルミニウムを含む粉末が、アルミニウム粉、又はアルミニウムとシリコンを含む合金の粉末である、請求項10に記載の粉末組成物。
- 前記アルミニウムとシリコンを含む合金の質量アルミニウム含有率が、88〜98%の範囲であり、前記アルミニウムとシリコンを含む合金の質量シリコン含有率が、2〜12%の範囲である、請求項12に記載の粉末の組成物。
- ウランを主成分としモリブデンを含む前記合金粉末が、65〜90質量%の前記粉末組成物である、請求項10〜13のいずれか一項に記載の粉末組成物。
- 核燃料要素を製造するための、請求項1〜9のいずれか一項に記載のγ−準安定相のウランを主成分としモリブデンを含む合金の粉末、又は請求項10〜14のいずれか一項に記載の粉末組成物の使用法。
- 放射性元素の生産用のターゲットを製造するために、請求項1〜9のいずれか一項に記載のγ−準安定相のウランを主成分としモリブデンを含む合金の粉末、又は請求項10〜14のいずれか一項に記載の粉末組成物の使用法。
- 核燃料要素又は放射性元素の生産用のターゲットを製造する方法であって、請求項10〜14のいずれか一項に記載の粉末組成物でシースを充填する工程と、それにより得られたアセンブリに少なくとも1つの熱処理を適用する工程とを含む方法。
- 前記粉末組成物中の前記アルミニウムを含む粉末が、アルミニウム粉である、請求項17に記載の製造方法。
- コアが保持されたシースを含み、前記コアが粒子が分散されたアルミニウムマトリクスから形成され、これらの粒子がγ−準安定相のウランを主成分としモリブデンを含む合金から成る核を含み、前記核が前記核と接して位置するアルミナ層によって覆われた、請求項18に記載の方法によって得られた核燃料要素又は放射性元素を作成するためのターゲット。
- 前記粉末組成物内の前記アルミニウムを含む粉末が、アルミニウムとシリコンを含む合金の粉末である、請求項17に記載の製造方法。
- コアが保持されたシースを含み、前記コアがアルミニウムと粒子が分散されたシリコンとを含むマトリクスから形成され、前記粒子がγ−準安定相のウランを主成分としモリブデンを含む合金から成る核を含み、前記核が前記核と接して位置するウラン、モリブデン、アルミニウム及びシリコンを含む層によって覆われ、その原子シリコン含有率が前記核との接点で少なくとも50%であり、前記層自体がアルミナ層で覆われている、請求項20に記載の方法によって得られる核燃料要素又は放射性元素を作成するためのターゲット。
- 板又はロッドの形態である、請求項19又は請求項21に記載の核燃料要素又は放射性元素を作成するためのターゲット。
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