JP2014516469A - ウェーハを永久的に結合する方法 - Google Patents
ウェーハを永久的に結合する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 235000012431 wafers Nutrition 0.000 title description 10
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 238000006243 chemical reaction Methods 0.000 claims abstract description 61
- 238000011049 filling Methods 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 14
- 230000002427 irreversible effect Effects 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 238000000678 plasma activation Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000011065 in-situ storage Methods 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 239000007795 chemical reaction product Substances 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 239000000376 reactant Substances 0.000 abstract 4
- 239000010410 layer Substances 0.000 description 106
- 239000011148 porous material Substances 0.000 description 21
- 230000001965 increasing effect Effects 0.000 description 12
- 230000002829 reductive effect Effects 0.000 description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 238000009832 plasma treatment Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 239000000047 product Substances 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910002808 Si–O–Si Inorganic materials 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 238000011010 flushing procedure Methods 0.000 description 3
- 238000009499 grossing Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910008065 Si-SiO Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 229910006405 Si—SiO Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 125000005372 silanol group Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 125000005373 siloxane group Chemical group [SiH2](O*)* 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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Abstract
Description
−フロントエンドオブライン適合性
これは、電気的に活性な構成要素の生産時の工程の適合性と定義される。したがって、結合工程は、構造ウェーハ上に既に存在するトランジスタなどの活性構成要素が加工中に有害な影響も損傷も受けないように計画されなければならない。適合性の基準は、主として特定の化学的要素(主としてCMOS構造における)の純度及び主として熱応力による機械的耐荷重性を含む。
−低汚染
−無加力
−特に異なる熱膨張係数を有する材料について、できる限り低い温度
−水
−チオール
−AP3000
−シラン及び/又は
−シラノール
− Si → SiO2、Si3N4、SiNxOy
− Ge → GeO2、Ge3N4
− α−Sn → SnO2
− B → B2O3、BN
− Se → SeO2
− Te → TeO2、TeO3
− Mg → MgO、Mg3N2
− Al → Al2O3、AlN
− Ti → TiO2、TiN
− V → V2O5
− Mn → MnO、MnO2、Mn2O3、Mn2O7、Mn3O4
− Fe → FeO、Fe2O3、Fe3O4
− Co → CoO、Co3O4,
− Ni → NiO、Ni2O3
− Cu → CuO、Cu2O、Cu3N
− Zn → ZnO
− Cr → CrN、Cr23C6、Cr3C、Cr7C3、Cr3C2
− Mo → Mo3C2
− Ti → TiC
− Nb → Nb4C3
− Ta → Ta4C3
− Zr → ZrC
− Hf → HfC
− V → V4C3、VC
− W → W2C、WC
− Fe → Fe3C、Fe7C3、Fe2C
− III−V:GaP、GaAs、InP、InSb、InAs、GaSb、GaN、AlN、InN、AlxGa1−xAs、InxGa1−xN
− IV−IV:SiC、SiGe、
− III−IV:InAlP、
−非線型光学:LiNbO3、LiTaO3、KDP(KH2PO4)
−太陽電池:CdS、CdSe、CdTe、CuInSe2、CuInGaSe2、CuInS2、CuInGaS2
−伝導性酸化物:In2−xSnxO3−y
Si−O−Si+H2O←→2SiOH
−周囲雰囲気にレザバーを曝露するステップ、
−とりわけ脱イオン化された水によりフラッシングするステップ、
−エダクトを含む又はそれ、とりわけH2O、H2O2、NH4OHからなる流体によりフラッシングするステップ、
−任意のガス雰囲気、とりわけ原子ガス、分子ガス、ガス混合物にレザバーを曝露するステップ、
−水蒸気又は過酸化水素蒸気を含む雰囲気にレザバーを曝露するステップ及び
−エダクトで既に充填されたレザバーを第1の基板上にレザバー形成層として堆積させるステップ。
−大気中水分及び/又は空気に含まれる酸素でレザバーを充填するために、第1の接触面を大気に曝露するステップ、
−第1の接触面をとりわけ主に、好ましくはほぼ完全に、とりわけ脱イオン化されたH2O及び/又はH2O2からなる流体に大気に曝露するステップ、
−第1の接触面をとりわけ0〜2000eVの範囲のイオンエネルギーを有するN2ガス及び/又はO2ガス及び/又はArガス及び/又はとりわけ95%Ar及び5%H2からなるフォーミングガスに曝露するステップ、
−既に挙げたエダクトでレザバーを充填するための蒸着。
Si−OH+HO−Si←→Si−O−Si+H2O
Si+2H2O→SiO2+2H2
2 第2の基板
3 第1の接触面
4 第2の接触面
5、5’ レザバー
6、6’ レザバー形成層
7、7’ 反応層
8 成長層
9 ナノギャップ
10 反応生成物
11 第1のプロファイル
12 第2のプロファイル
13 和曲線
A 平均厚さ
B 平均距離
R 平均厚さ
Claims (15)
- 以下のステップ、とりわけ以下の順序:
−第1の接触面(3)上のレザバー形成層(6)中にレザバー(5)を形成するステップ、
−レザバー(5)を第1のエダクト又はエダクトの第1の群で少なくとも部分的に充填するステップ、
−前結合連結部の形成のために第1の接触面(3)を第2の接触面(4)と接触させるステップ、
−第2の基板(2)を薄層化するステップ、
−第1のエダクトと第2の基板(2)の反応層(7)に含まれている第2のエダクトとの反応により少なくとも部分的に強化された第1及び第2の接触面(3、4)間の永久的結合を形成するステップ
により、第1の基板(1)の第1の接触面(3)を、少なくとも1つの反応層(7)を有する第2の基板(2)の第2の接触面(4)に結合する方法。 - 薄層化がとりわけ湿潤雰囲気中で好ましくは原位置でのエッチングにより行われる、請求項1に記載の方法。
- 薄層化がとりわけ原位置での乾式エッチングにより行われる、請求項1に記載の方法。
- 第2の基板(2)の第2の接触面(4)上のレザバー形成層(6’)中に、とりわけ第1のレザバー(5)の形成と同時にさらなるレザバー(5’)を形成させる、請求項1から3の何れか一項に記載の方法。
- 反応中に第2のエダクトのモル体積より大きいモル体積を有する反応生成物(10)が反応層(7)において形成される、請求項1から4の何れか一項に記載の方法。
- レザバー/複数のレザバー(5、5’)がプラズマ活性化により形成される、請求項1から5の何れか一項に記載の方法。
- レザバー形成層(6)としてとりわけ圧縮されたテトラエトキシシラン酸化物層を用いることによってレザバー(5、5’)を形成させる、請求項1から6の何れか一項に記載の方法。
- レザバー形成層(6)が、主として、とりわけ本質的に完全に、とりわけ非晶質の物質、とりわけ熱酸化により生成した二酸化ケイ素からなり、反応層(7)が易酸化性物質、とりわけ主として、好ましくは本質的に完全にSi、Ge、InP、GaP又はGaNからなる、請求項1から7の何れか一項に記載の方法。
- 第2の接触面(4)と反応層(7)との間にとりわけ主として天然二酸化ケイ素の成長層(8)が存在し、成長層(8)が薄層化によって少なくとも部分的に、とりわけ完全に除去される、請求項1から8の何れか一項に記載の方法。
- 永久的結合の形成の前で薄層化の後に、成長層(8)が1オングストロームから10nmの間の平均厚さAを有する、請求項9に記載の方法。
- レザバーの形成が真空中で行われる、請求項1から10の何れか一項に記載の方法。
- レザバーが、以下に挙げる1つ又は複数のステップ:
−第1の接触面(3)をとりわけ高酸素及び/又は水含量を有する雰囲気に曝露するステップ、
−第1の接触面(3)をとりわけ主に、好ましくはほぼ完全にとりわけ脱イオン化されたH2O及び/又はH2O2からなる流体に曝露するステップ、
−第1の接触面(3)をとりわけ0〜200eVの範囲のイオンエネルギーを有するN2ガス及び/又はO2ガス及び/又はArガス及び/又はとりわけ95%Ar及び5%H2からなるフォーミングガスに曝露するステップ
により充填される、請求項1から11の何れか一項に記載の方法。 - レザバー(5)が0.1nmから25nmの間、とりわけ0.1nmから20nmの間の平均厚さ(R)で形成される、請求項1から12の何れか一項に記載の方法。
- 永久的結合の形成の直前のレザバー(5)と反応層(7)との間の平均距離(B)が0.1nmから15nmの間、とりわけ0.5nmから5nmの間、好ましくは0.5nmから3nmの間である、請求項1から13の何れか一項に記載の方法。
- 不可逆的結合が前結合強さの2倍、好ましくは4倍、より好ましくは10倍、最も好ましくは25倍を含む結合強さを有する、請求項1から14の何れか一項に記載の方法。
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