JP2014511551A5 - - Google Patents

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Publication number
JP2014511551A5
JP2014511551A5 JP2013556911A JP2013556911A JP2014511551A5 JP 2014511551 A5 JP2014511551 A5 JP 2014511551A5 JP 2013556911 A JP2013556911 A JP 2013556911A JP 2013556911 A JP2013556911 A JP 2013556911A JP 2014511551 A5 JP2014511551 A5 JP 2014511551A5
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JP
Japan
Prior art keywords
dipole
metal
ink composition
surface layer
surfactant
Prior art date
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Pending
Application number
JP2013556911A
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English (en)
Japanese (ja)
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JP2014511551A (ja
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Publication date
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Priority claimed from PCT/US2012/027541 external-priority patent/WO2012122034A1/en
Publication of JP2014511551A publication Critical patent/JP2014511551A/ja
Publication of JP2014511551A5 publication Critical patent/JP2014511551A5/ja
Pending legal-status Critical Current

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JP2013556911A 2011-03-04 2012-03-02 金属ナノ構造を基にした透明な導体の仕事関数を調整する方法 Pending JP2014511551A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161449519P 2011-03-04 2011-03-04
US61/449,519 2011-03-04
PCT/US2012/027541 WO2012122034A1 (en) 2011-03-04 2012-03-02 Method of tuning work function of metal nanostructure-based transparent conductor

Publications (2)

Publication Number Publication Date
JP2014511551A JP2014511551A (ja) 2014-05-15
JP2014511551A5 true JP2014511551A5 (https=) 2015-04-16

Family

ID=45888479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013556911A Pending JP2014511551A (ja) 2011-03-04 2012-03-02 金属ナノ構造を基にした透明な導体の仕事関数を調整する方法

Country Status (8)

Country Link
US (1) US8723216B2 (https=)
EP (1) EP2681780B1 (https=)
JP (1) JP2014511551A (https=)
KR (1) KR20140020957A (https=)
CN (1) CN103503191A (https=)
SG (1) SG193253A1 (https=)
TW (1) TWI577237B (https=)
WO (1) WO2012122034A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9920207B2 (en) 2012-06-22 2018-03-20 C3Nano Inc. Metal nanostructured networks and transparent conductive material
US10029916B2 (en) 2012-06-22 2018-07-24 C3Nano Inc. Metal nanowire networks and transparent conductive material
US10020807B2 (en) 2013-02-26 2018-07-10 C3Nano Inc. Fused metal nanostructured networks, fusing solutions with reducing agents and methods for forming metal networks
JP6201345B2 (ja) * 2013-03-07 2017-09-27 三菱マテリアル株式会社 Ito粒子を製造する方法
JP2014224199A (ja) * 2013-05-16 2014-12-04 Dowaエレクトロニクス株式会社 銀ナノワイヤインクの製造方法および銀ナノワイヤインク
FR3011973B1 (fr) 2013-10-10 2016-01-01 Commissariat Energie Atomique Materiau multicouches comprenant des nanofils metalliques et un polymere non conducteur electriquement
US11274223B2 (en) 2013-11-22 2022-03-15 C3 Nano, Inc. Transparent conductive coatings based on metal nanowires and polymer binders, solution processing thereof, and patterning approaches
US11343911B1 (en) 2014-04-11 2022-05-24 C3 Nano, Inc. Formable transparent conductive films with metal nanowires
US9183968B1 (en) 2014-07-31 2015-11-10 C3Nano Inc. Metal nanowire inks for the formation of transparent conductive films with fused networks
US10040956B2 (en) 2014-11-05 2018-08-07 Cam Holding Corporation Short-chain fluorosurfactants with iodide additives for forming silver nanowire-based transparent conductive films
KR102685407B1 (ko) * 2019-08-02 2024-07-18 삼성디스플레이 주식회사 발광 소자, 이를 포함하는 표시 장치 및 표시 장치 제조 방법
CN110739097B (zh) * 2019-11-07 2021-07-16 浙江大学 功函数可调的银纳米线复合透明导电薄膜的制备方法
FR3104173B1 (fr) 2019-12-06 2023-07-21 Centre Nat Rech Scient : Procédé de production de nanoclusters de silicium et/ou germanium présentant un moment dipolaire électrique et/ou magnétique permanent

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
JP2004127562A (ja) * 2002-09-30 2004-04-22 Tokai Rubber Ind Ltd 有機エレクトロルミネッセンス素子用透明電極およびそれを用いてなる有機エレクトロルミネッセンス素子
US8563133B2 (en) * 2004-06-08 2013-10-22 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
US7776758B2 (en) * 2004-06-08 2010-08-17 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7635858B2 (en) * 2005-08-10 2009-12-22 Au Optronics Corporation Organic light-emitting device with improved layer conductivity distribution
SG150514A1 (en) * 2005-08-12 2009-03-30 Cambrios Technologies Corp Nanowires-based transparent conductors
JP2007149577A (ja) 2005-11-30 2007-06-14 Alps Electric Co Ltd 発光装置
TWI397446B (zh) * 2006-06-21 2013-06-01 Cambrios Technologies Corp 控制奈米結構形成及形狀之方法
CN101589473B (zh) * 2006-10-12 2011-10-05 凯博瑞奥斯技术公司 基于纳米线的透明导体及其应用
US20110001423A1 (en) * 2008-02-15 2011-01-06 Showa Denko K.K. Process for treating an electrode surface, electrode, and process for manufacturing organic electroluminescence devices
US8323744B2 (en) * 2009-01-09 2012-12-04 The Board Of Trustees Of The Leland Stanford Junior University Systems, methods, devices and arrangements for nanowire meshes
JP5533669B2 (ja) * 2009-01-19 2014-06-25 コニカミノルタ株式会社 透明電極、その製造方法及び有機エレクトロルミネッセンス素子
EP2430639A1 (en) * 2009-05-05 2012-03-21 Cambrios Technologies Corporation Reliable and durable conductive films comprising metal nanostructures
US20110024159A1 (en) * 2009-05-05 2011-02-03 Cambrios Technologies Corporation Reliable and durable conductive films comprising metal nanostructures
WO2011106438A1 (en) * 2010-02-24 2011-09-01 Cambrios Technologies Corporation Nanowire-based transparent conductors and methods of patterning same
US9244012B2 (en) * 2011-09-26 2016-01-26 University Of Maryland, Baltimore County Enhanced luminescence from nanopolished surfaces and plate wells

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